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Journal articles on the topic 'Current limiting devices'

Author: Grafiati

Published: 4 June 2021

Last updated: 3 February 2022

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1

Mikheev, Dmitry V., Yelena N. Ryzhkova, Alex V. Udaratin, and Regina Salikhova. "Experimental study of the operating modes of the resonant current-limiting device." E3S Web of Conferences 220 (2020): 01049. http://dx.doi.org/10.1051/e3sconf/202022001049.

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Decreasing of short-circuit currents in power supply systems enables the usage of less expensive switching-protective devices with a lower breaking capacity and reduction of damage from the consequences of emergency events. In electrical networks of low, medium and high voltage classes, resonant current-limiting devices are used to solve this problem, along with other technical solutions. However, these devices have unsatisfactory weight and dimensions, high cost and other disadvantages. The technical and economic indicators of such devices can be improved through the use of a coil-capacitor (coilcap). Coilcap is a passive element of an electric circuit, which simultaneously possesses inductivecapacitive properties and performs the functions of a reactor and a capacitor in a single technical object. This paper presents a functional diagram of the implementation, design, operating principle and mathematical description of a resonant current-limiting device based on a coilcap. Physical modeling of the steady-state modes of the device (normal mode and current limiting mode) was carried out, and the possibility of limiting short-circuit currents due to the use of a coilcap was confirmed. The practical application of a resonant current-limiting device based on a coilcap can be effectively combined with switching-protective and current-limiting disconnecting devices, relay protection, and automation equipment.

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2

Minseok Joo and Tae Kuk Ko. "Improvement on current limiting performance of current limiting devices with damping coils." IEEE Transactions on Appiled Superconductivity 9, no. 3 (1999): 4613–18. http://dx.doi.org/10.1109/77.791917.

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3

Fowler, A. C., I. Frigaard, and S. D. Howison. "Temperature Surges in Current-Limiting Circuit Devices." SIAM Journal on Applied Mathematics 52, no. 4 (August 1992): 998–1011. http://dx.doi.org/10.1137/0152058.

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4

Tournier, Dominique, Philippe Godignon, Shi Qin Niu, and Jean Francois de Palma. "SiC Current Limiting FETs (CLFs) for DC Applications." Materials Science Forum 778-780 (February 2014): 895–98. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.895.

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To address safety issue of DC networks in distribution and generation plants, a specific Current Limiting FET has been design. The fabricated power switch is able to operate in both forward and reverse conduction mode. Short-circuit time to failure has been adjust and a current sensing electrode as been added to ease the monitoring and the drive of this switch. Fabricated devices have been packaged in TO3 metal can, providing good heat conduction and durability. A maximum short circuit energy of 70J/cm2 as been measured for a IN = 6 A VBR = 1800 V rated device, corresponding to a short-circuit time before failure of tCC = 21ms under VDC = 300 V .

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5

Obradors, X., T. Puig, E. Mendoza, J. Plain, J. Figueras, X. Granados, A. E. Carrillo, E. Varesi, F. Sandiumenge, and P. Tixador. "Tuning the critical currents in bulk MTG YBCO for current limiting devices." Superconductor Science and Technology 13, no. 6 (May 23, 2000): 879–85. http://dx.doi.org/10.1088/0953-2048/13/6/353.

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6

C. Loh, Cheng Hong, Samuel Mok, C., P. "Voltage Quality Enhancement with Wavelet-Artificial Intelligence Current Limiting Devices." Electric Machines & Power Systems 28, no. 9 (September 2000): 811–22. http://dx.doi.org/10.1080/07313560050129071.

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7

Merck, W. F. H., and V. N. Zatelepin. "The gas dynamics of current-limiting devices during immobility time." IEEE Transactions on Plasma Science 25, no. 5 (1997): 947–53. http://dx.doi.org/10.1109/27.649602.

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8

Kostov, Dinyo Ivanov. "Winding distribution influence of some current limiting devices certain parameters." IOP Conference Series: Materials Science and Engineering 618 (October 29, 2019): 012027. http://dx.doi.org/10.1088/1757-899x/618/1/012027.

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9

Xu, Jianzhong, Sicheng Zhu, Chengyu Li, and Chengyong Zhao. "Dc fault current calculation method in MMC-HVDC grid considering current-limiting devices." Journal of Engineering 2019, no. 16 (March 1, 2019): 3188–95. http://dx.doi.org/10.1049/joe.2018.8766.

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10

Gao, Han, Zhang, Xiao, Zhao, and Li. "Study on Fault Current Characteristics and Current Limiting Method of Plug-In Devices in VSC-DC Distribution System." Energies 12, no. 16 (August 16, 2019): 3159. http://dx.doi.org/10.3390/en12163159.

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The DC (Direct Current) distribution system based on the voltage source converter (VSC-DC) has become a research hotspot due to its various advantages. There are many plug-in devices in the VSC-DC distribution system, which may be damaged by the fault current. Therefore, studying the fault current characteristics and current limiting method is one of the key methods to ensure the safe and stable operation of the VSC-DC distribution system. Based on theoretical analysis and simulation calculations, this paper studies the causes, influencing factors, and current limiting methods of the fault current when the pole-to-pole fault occurs at the line side of plug-in devices in a ±10 kV VSC-DC distribution system. Firstly, based on the system topology, the decisive fault condition of fault current and the design principle of current limiting reactor value are analyzed. Secondly, the theoretical calculation methods of fault current and current limiting reactor value which satisfies the breaking capacity of DC circuit breaker are proposed. Finally, the accuracy of theoretical calculation methods is verified by simulation in PSCAD/EMTDC (Power Systems Computer Aided Design/ Electromagnetic Transients including DC). The research results could provide the theoretical calculation methods of the fault current and the current limiting reactor value of plug-in devices in the ±10 kV VSC-DC distribution system.

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11

LEE, KUAN-TING, CHIUNG-CHENG CHUANG, YING-HSIANG WANG, and JING-JHAO YE. "A LOW TEMPERATURE INCREASE TRANSCUTANEOUS BATTERY CHARGER FOR IMPLANTABLE MEDICAL DEVICES." Journal of Mechanics in Medicine and Biology 16, no. 05 (August 2016): 1650069. http://dx.doi.org/10.1142/s021951941650069x.

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Many medical groups have used wireless battery charging technology for rechargeable batteries used in implantable devices. During charging, battery heat is lost from the battery and other heat sources within an implantable device, which may be harmful to patients’ tissues. Therefore, charging batteries with minimum discomfort to patients while replenishing battery capacity as much as possible is a challenge. In this paper, a constant voltage with a different limiting current strategy for a lithium-ion polymer battery is proposed, thereby modulating the limiting current rate that reduces battery temperature increase. Experiments show that better safety charging performance for 260, 600, and 1000[Formula: see text]mAh lithium-ion polymer batteries can be obtained by the proposed current-limiting method. Compared with conventional constant-current–constant-voltage charging strategies, the maximum battery temperature increase is improved.

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12

Yang, C., O. Miura, D. Ito, M. Morita, and T. Tokunaga. "AC transport characteristics of QMG elements for fault current limiting devices." IEEE Transactions on Appiled Superconductivity 9, no. 2 (June 1999): 1339–42. http://dx.doi.org/10.1109/77.783550.

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13

Spencer, T. A., K. J. Hendricks, J. W. Luginsland, and M. D. Stump. "Dynamics of the space-charge-limiting current in gyro-type devices." IEEE Transactions on Plasma Science 26, no. 3 (June 1998): 854–59. http://dx.doi.org/10.1109/27.700853.

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14

Ikegami, T., Y. Yamagata, K. Ebihara, and H. Nakajima. "Application of high-T/sub c/ superconductor to current limiting devices." IEEE Transactions on Applied Superconductivity 3, no. 1 (March 1993): 566–69. http://dx.doi.org/10.1109/77.233769.

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15

Tournier, Dominique, Pascal Bevilacqua, Dominique Planson, Hervé Morel, Pierre Brosselard, Josep Montserrat, André Lhorte, S. Carcouet, and D. Leonard. "High Power Density SiC 450A AccuMOSFET for Current Limiting Applications." Materials Science Forum 615-617 (March 2009): 911–14. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.911.

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The expansion of the electrical communications and distribution networks strongly contribute to the increase in the risks of appearance of defaults, such as over-voltage and/or over-current. These developments promote the emergence of safety devices for serial protection commonly named Current Limiting Devices (CLD's). This work presents the design, manufacture and characterization of silicon carbide accuMOSFET of high power density ratings. Components able to limit the current up to 450A @ 350V were manufactured and characterized. Specific characterization test benches were developed, able to provide high energy pulses required for characterization. CLDs behavior subjected to short overloads has been measured experimentally and analyzed be means of simulations for long-time overloads. A maximum sustainable high energy of 35 Joules has been estimated. This achievement give opportunities to build new architectures of serial protection systems.

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16

Passos, Carlos Auguto Cardoso, Marcos Tadeu D'azeredo Orlando, Juliana N. O. Pinto, Vinicius Toneto Abilio, Jnaína B. Depianti, Arthur Cavichini, and Luiz Carlos Machado. "Development and Test of a Small Resistive Fault Current Limiting Device Based on a SmBaCuO Ceramic." Advanced Materials Research 975 (July 2014): 173–78. http://dx.doi.org/10.4028/www.scientific.net/amr.975.173.

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Since the development of Low Critical Temperature Superconducting (low-Tc) materials, various studies have been published regarding this experimental concept. Recently, researchers have focused on the design and application of high-Tc superconductor (high-Tc) materials to develop fault current limiting circuit breakers. The operation of this circuit requires large prospective/limited current ratios, especially in hazardous areas. In spite of this, several studies describing the Superconducting Fault Current Limiter (SFCL) containing members of the bismuth, mercury or yttrium family cuprate have already been described. However, none of these studies included samarium cuprates. Consequently, we have conducted a study of a small superconducting current limiter device based on SmBa2Cu3O7-d samples. The preliminary results indicated that samarium cuprates could be applied to build superconducting fault current limiter devices. In tests using a polycrystalline sample, the superconducting properties were retained without modifications to its stoichiometry. These results suggest the possibility of future investigations into SFCL devices based on these superconducting ceramics. Keywords: High-Tc, Sm-123, Device, Fault current limiter.

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17

Balan, Horia, Mircea Buzdugan, and Adrian Augustin Pop. "Series Resonance Technique for Short-Circuit Current Limiting Devices in DC Grids." Materials Science Forum 792 (August 2014): 293–98. http://dx.doi.org/10.4028/www.scientific.net/msf.792.293.

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The paper presents a by-pass solution used to limit the short-circuit current in the DC networks. The aim of the by-pass circuit consists in injecting a reverse current throughout the power switch, in order that switching achieves at low current value. The reverse current generation is obtained using a series resonant circuit, simulated in the paper in the Matlab-Simulink medium, the results of the simulation being compared to the experimental ones.

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18

Jabarullah, Noor H., Emanuele Verrelli, Clayton Mauldin, Luis A. Navarro, Josh Golden, Leonidas Madianos, Dimitris Tsoukalas, and Neil T. Kemp. "Novel conducting polymer current limiting devices for low cost surge protection applications." Journal of Applied Physics 116, no. 16 (October 28, 2014): 164501. http://dx.doi.org/10.1063/1.4899246.

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19

Hazel, Terence, Jacques Lavaud, and Bruno Leforgeais. "Using Pyrotechnic Current-Limiting Devices: A Case Study of What Went Right." IEEE Industry Applications Magazine 23, no. 5 (September 2017): 50–59. http://dx.doi.org/10.1109/mias.2016.2600726.

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20

Maznev, A. S., A. B. Nikitin, I. M. Kokurin, A. M. Kostrominov, and E. I. Makarova. "Improvement of the current-limiting devices of collector traction motors of direct-current electric rolling stock." Russian Electrical Engineering 88, no. 10 (October 2017): 661–65. http://dx.doi.org/10.3103/s1068371217100108.

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21

Lu, Wenchao, Wenbo Chen, Yibo Li, and Rashmi Jha. "Self Current Limiting MgO ReRAM Devices for Low-Power Non-Volatile Memory Applications." IEEE Journal on Emerging and Selected Topics in Circuits and Systems 6, no. 2 (June 2016): 163–70. http://dx.doi.org/10.1109/jetcas.2016.2547758.

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22

Mei, Jun, Guangyao Fan, Rui Ge, Bingbing Wang, Pengfei Zhu, and Lingxiao Yan. "Research on Coordination and Optimal Configuration of Current Limiting Devices in HVDC Grids." IEEE Access 7 (2019): 106727–39. http://dx.doi.org/10.1109/access.2019.2930748.

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23

Chiguvare, Z., J. Parisi, and V. Dyakonov. "Current limiting mechanisms in indium-tin-oxide/poly3-hexylthiophene/aluminum thin film devices." Journal of Applied Physics 94, no. 4 (August 15, 2003): 2440–48. http://dx.doi.org/10.1063/1.1588358.

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24

Naderi, Seyed, Pooya Davari, Dao Zhou, Michael Negnevitsky, and Frede Blaabjerg. "A Review on Fault Current Limiting Devices to Enhance the Fault Ride-Through Capability of the Doubly-Fed Induction Generator Based Wind Turbine." Applied Sciences 8, no. 11 (October 25, 2018): 2059. http://dx.doi.org/10.3390/app8112059.

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The doubly-fed induction generator has significant features compared to the fixed speed wind turbine, which has popularised its application in power systems. Due to partial rated back-to-back converters in the doubly-fed induction generator, fault ride-through capability improvement is one of the important subjects in relation to new grid code requirements. To enhance the fault ride-through capability of the doubly-fed induction generator, many studies have been carried out. Fault current limiting devices are one of the techniques utilised to limit the current level and protect the switches, of the back-to-back converter, from over-current damage. In this paper, a review is carried out based on the fault current limiting characteristic of fault current limiting devices, utilised in the doubly-fed induction generator. Accordingly, fault current limiters and series dynamic braking resistors are mainly considered. Operation of all configurations, including their advantages and disadvantages, is explained. Impedance type and the location of the fault current limiting devices are two important factors, which significantly affect the behaviour of the doubly-fed induction generator in the fault condition. These two factors are studied by way of simulation, basically, and their effects on the key parameters of the doubly-fed induction generator are investigated. Finally, future works, in respect to the application of the fault current limiter for the improvement of the fault ride-through of the doubly-fed induction generator, have also been discussed in the conclusion section.

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25

Heidary, Amir, Hamid Radmanesh, Ali Moghim, Kamran Ghorbanyan, Kumars Rouzbehi, Eduardo M. G. Rodrigues, and Edris Pouresmaeil. "A Multi-Inductor H Bridge Fault Current Limiter." Electronics 8, no. 7 (July 16, 2019): 795. http://dx.doi.org/10.3390/electronics8070795.

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Current power systems will suffer from increasing pressure as a result of an upsurge in demand and will experience an ever-growing penetration of distributed power generation, which are factors that will contribute to a higher of incidence fault current levels. Fault current limiters (FCLs) are key power electronic devices. They are able to limit the prospective fault current without completely disconnecting in cases in which a fault occurs, for instance, in a power transmission grid. This paper proposes a new type of FCL capable of fault current limiting in two steps. In this way, the FCLs’ power electronic switches experience significantly less stress and their overall performance will significantly increase. The proposed device is essentially a controllable H bridge type fault current limiter (HBFCL) that is comprised of two variable inductances, which operate to reduce current of main switch in the first stage of current limiting. In the next step, the main switch can limit the fault current while it becomes open. Simulation studies are carried out using MATLAB and its prototype setup is built and tested. The comparison of experimental and simulation results indicates that the proposed HBFCL is a promising solution to address protection issues.

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26

Jabarullah, Noor H., Emanuele Verrelli, Alex Gee, Clayton Mauldin, Luis A. Navarro, Josh H. Golden, and Neil T. Kemp. "Large dopant dependence of the current limiting properties of intrinsic conducting polymer surge protection devices." RSC Advances 6, no. 89 (2016): 85710–17. http://dx.doi.org/10.1039/c6ra18549e.

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27

Elschner, S., F. Breuer, H. Walter, and J. Bock. "Magnetic Field Assisted Quench Propagation as a New Concept for Resistive Current Limiting Devices." Journal of Physics: Conference Series 43 (June 1, 2006): 917–20. http://dx.doi.org/10.1088/1742-6596/43/1/224.

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28

Hoshino, T., and I. Muta. "Load test on superconducting transformer and fault current limiting devices for electric power system." IEEE Transactions on Magnetics 30, no. 4 (July 1994): 2018–21. http://dx.doi.org/10.1109/20.305663.

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29

Rybak, Andrzej, Gisele Boiteux, Flavien Melis, and Gerard Seytre. "Conductive polymer composites based on metallic nanofiller as smart materials for current limiting devices." Composites Science and Technology 70, no. 2 (February 2010): 410–16. http://dx.doi.org/10.1016/j.compscitech.2009.11.019.

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30

Wai, See Khay, Nasri A. Hamid, Noor Saleha Selamat, Pang Jia Yew, Amir Basha Ismail, and Badrol Ahmad. "Electromagnetic and thermal analysis of high-Tc superconductor in application of current limiting devices." Journal of Electroceramics 21, no. 1-4 (September 1, 2007): 365–69. http://dx.doi.org/10.1007/s10832-007-9205-4.

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31

Schöner, Adolf, Mietek Bakowski, Per Ericsson, Helena Strömberg, Hiroyuki Nagasawa, and Masayuki Abe. "Realisation of Large Area 3C-SiC MOSFETs." Materials Science Forum 483-485 (May 2005): 801–4. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.801.

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Lateral MOSFET devices with varying size from a single unit cell to 3x3 mm2 containing 1980 unit cells have been realised using two basic technologies; lateral trench MOSFET (LTMOS) with epitaxially grown source and drain, and lateral MOSFET with lightly doped drain (LDDMOS) having implanted source and drain regions. The LDDMOS devices had blocking capability of 100 V and the channel mobility in the range of 10 cm2/Vs in {-110} current flow direction and of 5 cm2/Vs in {110} current flow direction. The properties of both fabricated MOSFET types, LTMOS and LDDMOS, are dominated by a high density of interface states of the order of 1×1013 cm-2eV-1. Both the drain current and the leakage current scale linearly with the device size up to the maximum investigated device size of 3x3 mm2. No size limiting defects have been observed contrary to what is often the case in 4H-SiC material.

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32

Rao, Siddhartha, Brad J. Martinsen, Joseph Higgins, Henisha Dhandhusaria, and Dwijesh Patel. "Orbital atherectomy for treating calcified iliac artery disease to enable large bore device delivery: A case series report." SAGE Open Medical Case Reports 8 (January 2020): 2050313X2094306. http://dx.doi.org/10.1177/2050313x20943068.

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The current standard of care for the treatment of flow-limiting calcific iliac artery disease is balloon angioplasty and subsequent stent placement. However, the presence of calcified lesions may prevent adequate stent expansion or impede the delivery of large bore devices, such as those for transcatheter aortic valve replacement or endovascular aneurysm repair implants. Plaque modification through vessel preparation with orbital atherectomy may enable stent expansion and subsequent proper large device delivery with low rates of procedural complications. A retrospective, single center, case series of 13 subjects treated with orbital atherectomy in iliac arteries to enable large bore device delivery was conducted. Patients were selected for treatment based on iliac artery disease or inability to deliver devices. The procedural complication rate was defined as the composite of flow-limiting dissection, perforation, slow flow, vessel closure, spasm, embolism, and thrombosis. Technical success was assessed as angiographic luminal gain and subsequent successful delivery of large bore devices through the treatment area, as well as freedom from procedural complications. Orbital atherectomy vessel preparation of severely calcified iliac artery lesions resulted in adequate stent expansion safely and enabled delivery of rigid/large profile devices. Further studies are warranted to evaluate patient selection criteria, as well as long-term efficacy and safety rates of orbital atherectomy in the iliac artery.

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33

Aljawad, Mohammed, Sanjeev Sirpal, Eric M. Yoshida, and Natasha Chandok. "Transient Elastography in Canada: Current State and Future Directions." Canadian Journal of Gastroenterology and Hepatology 29, no. 7 (2015): 373–76. http://dx.doi.org/10.1155/2015/672853.

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BACKGROUND: Transient elastography (TE) is a safe and effective technology to noninvasively assess hepatic fibrosis in patients with numerous liver conditions. TE is not readily available to all Canadians, and data regarding how this technology is incorporated into clinical practice are lacking.OBJECTIVE: To describe TE practices in Canada, and to identify strategies to optimize access and usage.METHODS: All Canadian centres with TE devices were invited to complete a survey after obtaining purchasing data from the national distributor of the device. Descriptive statistics were generated.RESULTS: Forty-two devices were available in Canada as of January 2015. Seventy-one percent are used in academic settings, 74% are hospital based and 26% are in private clinics. The test is performed by trained nurses in 48% of centres, physicians in 19%, technicians in 9.5% and by any member of the health care team in 19%. Nineteen percent of centres provide satellite clinics to perform the test. While the majority of the centres perform the test at no additional cost to patients, 29% charge a variable fee.CONCLUSION: In Canada, most TE devices are used in academic and/or hospital-based settings, thus limiting access to this technology to many patients. A sizeable minority of centres mandate patients pay variable out-of-pocket fees. Satellite clinics offered by some centres could increase access, but are not widespread. The lack of uniformity with TE practices in Canada suggests that a national policy is needed.

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34

Neumüller, H. W., W. Schmidt, H. Kinder, H. C. Freyhardt, B. Stritzker, R. Wördenweber, and V. Kirchhoff. "Large area deposition of YBCO thick films for applications in resistive fault current limiting devices." Journal of Alloys and Compounds 251, no. 1-2 (April 1997): 366–72. http://dx.doi.org/10.1016/s0925-8388(96)02691-6.

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35

Du, Guang Chao. "The Protection of Thyristor in Motor Control System." Advanced Materials Research 219-220 (March 2011): 908–13. http://dx.doi.org/10.4028/www.scientific.net/amr.219-220.908.

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The bearing ability of thyristor to over-voltage and over-current is poor. According to the causes lead to over-voltage and over-current , adopting over-voltage protection such as RC snubber, vristor, and so on, and limiting reactors, current sensing devices, fast fuses, etc. are used in fast over-current protection.

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36

Zhang, Jinghan, Yuqun Gao, Fanglei Xiao, Fang Guo, Xinwei Li, Yongxia Han, and Licheng Li. "Study on DC Breaker Fault Current and Its Limiting Method of Multiterminal Flexible DC Distribution System." Energies 12, no. 5 (March 5, 2019): 859. http://dx.doi.org/10.3390/en12050859.

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The multiterminal flexible DC (MTDC) distribution system has become a hot research topic for its advantages such as new energy load accessibility and high reliability of power supply. However, the fault current during short-circuit faults will be more complicated and serious because of the multiple operating modes and specific converter structure in MTDC distribution system. The high fault current will affect the safety of equipment and system operation. As a result, it is necessary to study the fault current generation mechanism and current limiting method of the DC distribution system. In this paper, the generation mechanism, transient characteristics, and the influencing factors of the fault current in the DC breaker during the short-circuit faults are analyzed by theoretical analysis and simulations separately based on a ±10 kV three-terminal flexible DC distribution system. The current limiting devices are analyzed, and its configuration position and parameter calculation method are proposed. On this basis, the parameters of the current limiting reactor and its effects on each position are analyzed by electromagnetic transient simulations. The current limiting scheme is proposed and its reliability is verified. The study results can provide some reference for overcurrent analysis and current limiting measures of the multiterminal DC distribution system.

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37

Lee, Ho-Yun, Mansoor Asif, Kyu-Hoon Park, Hyun-Min Mun, and Bang-Wook Lee. "Appropriate Protection Scheme for DC Grid Based on the Half Bridge Modular Multilevel Converter System." Energies 12, no. 10 (May 15, 2019): 1837. http://dx.doi.org/10.3390/en12101837.

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The half bridge (HB) modular multilevel converter (MMC) technology is considered a breakthrough to mitigate the shortcomings of the conventional voltage source converter (VSC) in high-voltage direct-current (HVDC) grid application. However, interruption of the DC fault is still a challenge due to fast di/dt and extremely high levels of DC fault current. The fault interruption using a DC circuit breaker (DCCB) causes enormous energy dissipation and voltage stress across the DCCB. Therefore, the use of a fault current limiter is essential, and the superconducting fault current limiter (SFCL) is the most promising choice. Past literature has focused on the operating characteristics of DCCB or limiting characteristics of the SFCL. However, there is little understanding about the fault interruption and system recovery characteristics considering both DCCB and SFCL. In this paper, we have presented a comparative study on fault interruption and system recovery characteristics considering three types of fault limiting devices in combination with circuit breaker. The transient analyses of AC and DC system have been performed, to suggest the most preferable protection scheme. It has been concluded that, amongst the three fault limiting devices, the Hybrid SFCL in combination with circuit breaker, delivers the most desirable performance in terms of interruption time, recovery time, energy dissipation and voltage transients.

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38

Jabarullah, Noor H., Emanuele Verrelli, Clayton Mauldin, Luis A. Navarro, Josh H. Golden, Leonidas M. Madianos, and Neil T. Kemp. "Superhydrophobic SAM Modified Electrodes for Enhanced Current Limiting Properties in Intrinsic Conducting Polymer Surge Protection Devices." Langmuir 31, no. 22 (May 29, 2015): 6253–64. http://dx.doi.org/10.1021/acs.langmuir.5b00686.

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39

DONETSKY, D. V., R. U. MARTINELLI, and G. L. BELENKY. "MID-INFRARED GaSb-BASED LASERS WITH TYPE-I HETEROINTERFACES." International Journal of High Speed Electronics and Systems 12, no. 04 (December 2002): 1025–38. http://dx.doi.org/10.1142/s0129156402001903.

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The design of room-temperature, InGaAsSb/AlGaAsSb diode lasers has evolved from the first double-heterojunction lasers described in 1980 that operated in the pulsed-current mode to present-day continuous–wave (CW), high-power, quantum–well diode lasers. We discuss in detail recent results from type-I-heterostructure, GaSb-based CW room-temperature diode lasers. The devices operate within the wavelength range of 1.8 to 2.7 μm, providing output powers up to several Watts. We analyze the factors limiting device performance.

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40

Valdes, M. E., A. J. Crabtree, and T. Papallo. "Method for Determining Selective Capability of Current-Limiting Overcurrent Devices Using Peak Let-Through Current—What Traditional Time–Current Curves Will Not Tell You." IEEE Transactions on Industry Applications 46, no. 2 (2010): 603–11. http://dx.doi.org/10.1109/tia.2010.2041080.

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Croce, Robert A., Santhisagar Vaddiraju, Allen Legassey, Fotios Papadimitrakopoulos, and Faquir C. Jain. "Mathematical Model and Fabrication of Multi-Layer Electrochemical Glucose Sensors." International Journal of High Speed Electronics and Systems 24, no. 03n04 (September 2015): 1550012. http://dx.doi.org/10.1142/s0129156415500123.

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The design and fabrication of multi-layer amperometric electrochemical glucose sensors is dependent upon the diffusional kinetics of the chemical/biochemical species which contribute to the sensor’s response. Considerable effort has been carried out to coat the working electrode with appropriate glucose flux-limiting membranes which is pertinent for superior in vivo performance, and hence requires a careful understanding of the participating species within the sensor cross-sectional architecture. This contribution reports the computational modeling of Clark’s first generation amperometric glucose sensor coated with an electro-polymerized glucose oxidase (GOx) layer along with a layer of polyurethane (PU) employed to reduce the glucose-influx in order to generate linear operation over the normal physiological glucose range in vivo. The model was programmed using MATLAB and utilizes the finite-difference method for the solution to the enzymatic reaction-based diffusion equations. Additionally, experimental devices were fabricated, tested and compared with the simulated results. The simulation of these devices have been shown to align well with experimentally fabricated devices in terms of amperometric current density. The increase in device linearity with the addition of the outer glucose-flux limiting PU membrane corroborate our experimental findings reported in this study which can be used as a powerful analytical tool in designing high–performance next generation implantable glucose sensors.

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Ohsaki, H., Y. Ichiki, and S. Sugita. "FEM analysis of current limiting devices using superconducting thin film and AC losses of YBCO coated conductor." COMPEL - The international journal for computation and mathematics in electrical and electronic engineering 23, no. 4 (December 2004): 1092–99. http://dx.doi.org/10.1108/03321640410553526.

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Brilinskii, A. S., G. A. Evdokunin, I. A. Kuz’min, N. N. Magdeev, M. E. Moizykh, and M. A. Sel’kova. "Specific Application Features of Current-Limiting Devices Based on High-Temperature Superconductivity in High-Voltage Electric Networks." Power Technology and Engineering 53, no. 6 (March 2020): 751–59. http://dx.doi.org/10.1007/s10749-020-01151-9.

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Tonkoshkur, Alexander, and Alexander Ivanchenko. "ALGORITHM FOR SOFTWARE IMPLEMENTATION OF DESIGNING OVERVOLTAGE PROTECTION IN PHOTOVOLTAIC MODULES OF SOLAR ARRAYS USING A VARISTOR-POSISTOR STRUCTURE." System technologies 1, no. 126 (March 27, 2020): 124–43. http://dx.doi.org/10.34185/1562-9945-1-126-2020-14.

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The use of modern hardware and software design allows to effectively solve a number of problems associated with the development of various technical devices. The specificity of this approach is the development of algorithms with the capabilities of dynamic correction of the design process with the participation of the user. The algorithm of the software implementation of designing protection circuits against electrical overloads in photovoltaic modules of solar arrays using a voltage limiting device based on metal oxide varistor and posistor of the PolySwitch type being in thermal contact is described in this paper. The algorithm provides for determining the optimal technical parameters of the voltage limiting device (minimum resistance and tripping current of the posistor element, classification voltage and non-linearity coefficient of the varistor element) for the operation of photovoltaic module, which is in the state of lighting in the absence and presence of faulty, degraded, or shaded photovoltaic cells.

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Bosiers, Marc, Koen Deloose, Rodrigo Moreialvar, Jurgen Verbist, and Patrick Peeters. "Current status of infrapopliteal artery stenting in patients with critical limb ischemia." Jornal Vascular Brasileiro 7, no. 3 (September 2008): 248–55. http://dx.doi.org/10.1590/s1677-54492008000300010.

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Due to the fear that early thrombosis and late luminal loss resulting from intimal hyperplasia might impede sustained patency of small-caliber arteries, such as those of the infrapopliteal bed, stent implantation in below-knee vessels remains controversial and is generally reserved for cases with a suboptimal outcome after percutaneous transluminal angioplasty (i.e. > 50% residual stenosis, flow-limiting dissection). Although evidence starts to build, favoring the use of stenting in the tibial area, results of well-conducted randomized controlled trials have to be awaited to change this strategy. Because of diameter similarities with coronary arteries, the first stents applied in the infrapopliteal vessels were all coronary devices. Once the feasibility of the stenting approach with these coronary products was shown, device manufacturers started to develop a dedicated infrapopliteal product range. To date, a broad spectrum of stent types has been used and investigated for the given indication. This article overviews the available literature and results of different balloon-expandable (bare metal, passive coated, drug eluting), self-expanding and absorbable stent types available for below-the-knee application and gives recommendations for future device technology advancements.

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Tournier, Dominique, Miquel Vellvehi, Phillippe Godignon, Xavier Jordá, and José Millan. "Double Gate 180V-128mA/mm SiC-MESFET for Power Switch Applications." Materials Science Forum 527-529 (October 2006): 1243–46. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1243.

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The potential of SiC MESFETs has been demonstrated for high frequency applications on several circuits in the 1-5 GHz frequency range. Although MESFET structures are conventionally used for RF applications, in this paper we report a low voltage (180V) power switch and its current limiting application based on a double gate MESFET structure, showing enhanced forward and blocking capabilities. The reported devices utilize a thin highly doped p-type layer implanted at high energy as buffer layer. Various layouts have been fabricated, varying the gate length; with either a single gate (p-buried layer connected to source) or double gate (one Schottky, and the second on the P-buried layer). Gate RESURF field-plate variation has been also included at the gate electrode. The I(V) electrical characterization validates the double gate configuration benefits. This double gate structure shows a higher gate transconductance than the single gate one. High voltage measurements in conducting mode (180V, 160mA/mm, 30W/mm) confirm the operation of the MESFET as a current limiting device, with excellent gate control capabilities at temperature up to 190°C.

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Bulashevich, Kirill, Sergey Konoplev, and Sergey Karpov. "Effect of Die Shape and Size on Performance of III-Nitride Micro-LEDs: A Modeling Study." Photonics 5, no. 4 (October 27, 2018): 41. http://dx.doi.org/10.3390/photonics5040041.

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Flip-chip truncated-pyramid-shaped blue micro-light-emitting diodes (μ-LEDs), with different inclinations of the mesa facets to the epitaxial layer plane, are studied by simulations, implementing experimental information on temperature-dependent parameters and characteristics of large-size devices. Strong non-monotonous dependence of light extraction efficiency (LEE) on the inclination angle is revealed, affecting, remarkably, the overall emission efficiency. Without texturing of emitting surfaces, LEE to air up to 54.4% is predicted for optimized shape of the μ-LED dice, which is higher than that of conventional large-size LEDs. The major factors limiting the μ-LED performance are identified, among which, the most critical are the optical losses originated from incomplete light reflection from metallic electrodes and the high p-contact resistance caused by its small area. Optimization of the p-electrode dimensions enables further improvement of high-current wall-plug efficiency of the devices. The roles of surface recombination, device self-heating, current crowding, and efficiency droop at high current densities, in limitation of the μ-LED efficiency, are assessed. A novel approach implementing the characterization data of large-size LED as the input information for simulations is tested successfully.

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Abdulraheem, Yaser, Moustafa Ghannam, Hariharsudan Sivaramakrishnan Radhakrishnan, and Ivan Gordon. "The Role of Silicon Heterojunction and TCO Barriers on the Operation of Silicon Heterojunction Solar Cells: Comparison between Theory and Experiment." International Journal of Photoenergy 2021 (March 15, 2021): 1–12. http://dx.doi.org/10.1155/2021/6632180.

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Photovoltaic devices based on amorphous silicon/crystalline silicon (a-Si:H/c-Si) heterojunction interfaces hold the highest efficiency as of date in the class of silicon-based devices with efficiencies exceeding 26% and are regarded as a promising technology for large-scale terrestrial PV applications. The detailed understanding behind the operation of this type of device is crucial to improving and optimizing its performance. SHJ solar cells have primarily two main interfaces that play a major role in their operation: the transparent conductive oxide (TCO)/a-Si:H interface and the a-Si:H/c-Si heterojunction interface. In the work presented here, a detailed analytical description is provided for the impact of both interfaces on the performance of such devices and especially on the device fill factor ( FF ). It has been found that the TCO work function can dramatically impact the FF by introducing a series resistance element in addition to limiting the forward biased current under illumination causing the well-known S-shape characteristic in the I-V curve of such devices. On the other hand, it is shown that the thermionic emission barrier at the heterojunction interface can play a major role in introducing an added series resistance factor due to the intrinsic a-Si:H buffer layer that is usually introduced to improve surface passivation. Theoretical explanation on the role of both interfaces on device operation based on 1D device simulation is experimentally verified. The I-V characteristics of fabricated devices were compared to the curves produced by simulation, and the observed degradation in the FF of fabricated devices was explained in light of analytical findings from simulation.

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Love, John A., Shu-Hua Chou, Ye Huang, Guilllermo C. Bazan, and Thuc-Quyen Nguyen. "Effects of solvent additive on “s-shaped” curves in solution-processed small molecule solar cells." Beilstein Journal of Organic Chemistry 12 (November 28, 2016): 2543–55. http://dx.doi.org/10.3762/bjoc.12.249.

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A novel molecular chromophore, p-SIDT(FBTThCA8)2, is introduced as an electron-donor material for bulk heterojunction (BHJ) solar cells with broad absorption and near ideal energy levels for the use in combination with common acceptor materials. It is found that films cast from chlorobenzene yield devices with strongly s-shaped current–voltage curves, drastically limiting performance. We find that addition of the common solvent additive diiodooctane, in addition to facilitating crystallization, leads to improved vertical phase separation. This yields much better performing devices, with improved curve shape, demonstrating the importance of morphology control in BHJ devices and improving the understanding of the role of solvent additives.

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Beckmann, Karsten, Josh Holt, Harika Manem, Joseph Van Nostrand, and Nathaniel C. Cady. "Nanoscale Hafnium Oxide RRAM Devices Exhibit Pulse Dependent Behavior and Multi-level Resistance Capability." MRS Advances 1, no. 49 (2016): 3355–60. http://dx.doi.org/10.1557/adv.2016.377.

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ABSTRACTResistive Random Access Memory (RRAM) is a novel form of non-volatile memory that is expected to play a major role in future computing and memory solutions. It has been shown that the resistance of RRAM devices can be precisely tuned by modulating switching voltages, by limiting peak current, and by adjusting the switching pulse duration. This enables the realization of novel applications such as memristive neuromorphic computing and neural network computing. The RRAM devices described in this work utilize an inert tungsten bottom electrode, hafnium oxide based active switching layer, a titanium oxygen exchange layer, and an inert titanium nitride top electrode. Linear sweep and controlled pulse (down to 10 ns) based electrical characterization of RRAM devices was performed in a 1 transistor 1 RRAM (1T1R) configuration to determine endurance, reliability, retention and threshold voltage parameters. We demonstrated endurance values above 108cycles with an average on/off ratio of 15 and pulse voltages for set/reset operation of ±1.5V. The on-chip 1T1R structures show an excellent controllability with respect to the low and high resistive state by manipulating the peak current from 75 up to 350µA we were able to achieve 10 discrete resistive states. Our results demonstrate that the set operation (which shifts the RRAM device from the high to the low resistance state) is only dependent on the voltage of the switching pulse and the peak current limit. The reset operation, however, occurs in an analog fashion and appears to be dependent on the total energy of the applied switching pulse. Pulse energy was modulated by varying the peak voltage which resulted in a larger relative change of the RRAM device resistance.

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