Academic literature on the topic 'CuInGaSe'
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Journal articles on the topic "CuInGaSe"
Lee, Ah-Reum, Hun-Soo Jeon, Gang-Suok Lee, Jin-Eun Ok, Dong-Wan Cho, Kyung-Hwa Kim, Min Yang, et al. "Characterizations of CuInGaSe(CIGS) mixed-source and the thin film." Journal of the Korean Crystal Growth and Crystal Technology 20, no. 1 (February 28, 2010): 1–6. http://dx.doi.org/10.6111/jkcgct.2010.20.1.001.
Full textYoshino, Kenji, Takahiro Tokuda, Akira Nagaoka, Kenichiro Miseki, Rie Mori, Shou Bin Zhang, and Shigeo Doutyoku. "Growth of CuInGaSe2 Films by RF Sputtering Using CuInGaSe2 Single Phase Target." Applied Mechanics and Materials 372 (August 2013): 571–74. http://dx.doi.org/10.4028/www.scientific.net/amm.372.571.
Full textChang, Jen-Chuan, Chia-Chih Chuang, Jhe-Wei Guo, Shu-Chun Hsu, Hung-Ru Hsu, Chung-Shin Wu, and Tung-Po Hsieh. "An Investigation of CuInGaSe2 Thin Film Solar Cells by Using CuInGa Precursor." Nanoscience and Nanotechnology Letters 3, no. 2 (April 1, 2011): 200–203. http://dx.doi.org/10.1166/nnl.2011.1147.
Full textMendivil, M. I., L. V. García, B. Krishnan, D. Avellaneda, J. A. Martinez, and S. Shaji. "CuInGaSe 2 nanoparticles by pulsed laser ablation in liquid medium." Materials Research Bulletin 72 (December 2015): 106–15. http://dx.doi.org/10.1016/j.materresbull.2015.07.038.
Full textSONG, H., S. KIM, H. KIM, S. KIM, K. KANG, J. LEE, and K. YOON. "Preparation of CuInGaSe thin films by sputtering and selenization process." Solar Energy Materials and Solar Cells 75, no. 1-2 (January 2003): 145–53. http://dx.doi.org/10.1016/s0927-0248(02)00125-3.
Full textJeon, Hunsoo, Ahreum Lee, Gang-Seok Lee, Dong-Wan Jo, Jin-Eun Ok, Kyoung Hwa Kim, Min Yang, et al. "Fabrication of the CuInGaSe Pellet and Characterization of the Thin Film." Japanese Journal of Applied Physics 50, no. 1S1 (January 1, 2011): 01AG01. http://dx.doi.org/10.7567/jjap.50.01ag01.
Full textJeon, Hunsoo, Ahreum Lee, Gang-Seok Lee, Dong-Wan Jo, Jin-Eun Ok, Kyoung Hwa Kim, Min Yang, et al. "Fabrication of the CuInGaSe Pellet and Characterization of the Thin Film." Japanese Journal of Applied Physics 50 (January 20, 2011): 01AG01. http://dx.doi.org/10.1143/jjap.50.01ag01.
Full textKim, Hong Tak, Chang Duk Kim, Maeng Jun Kim, and Young‐Soo Sohn. "AC analysis of temperature effects on conversion efficiency of CuInGaSe 2 solar cells." Electronics Letters 51, no. 1 (January 2015): 86–88. http://dx.doi.org/10.1049/el.2014.3257.
Full textDevaney, W. E., W. S. Chen, J. M. Stewart, and R. A. Mickelsen. "Structure and properties of high efficiency ZnO/CdZnS/CuInGaSe/sub 2/ solar cells." IEEE Transactions on Electron Devices 37, no. 2 (1990): 428–33. http://dx.doi.org/10.1109/16.46378.
Full textMir, Irshad Ahmad, Kamla Rawat, and H. B. Bohidar. "CuInGaSe nanocrystals for detection of trace amount of water in D2O (at ppm level)." Crystal Research and Technology 51, no. 10 (September 8, 2016): 561–68. http://dx.doi.org/10.1002/crat.201600054.
Full textDissertations / Theses on the topic "CuInGaSe"
Натарова, Ю. В., and О. Б. Галат. "Исследование фотоэлектрического преобразователя на основе CuInGaSe." Thesis, Сумський державний університет, 2018. http://openarchive.nure.ua/handle/document/9010.
Full textГалат, А. Б., and Ю. В. Натарова. "Исследование фотоэлектрического преобразователя на основе CuInGaSe." Thesis, Сумський державний університет, 2018. http://essuir.sumdu.edu.ua/handle/123456789/67886.
Full textTolan, Gavin James. "Electro-chemical development of CuInGaSe2-based photovoltaic solar cells." Thesis, Sheffield Hallam University, 2008. http://shura.shu.ac.uk/20444/.
Full textXu, Yan. "Fabrication et caractérisation des films CuInGase2 par pulvérisation cathodique : étude des défauts par la spectroscopie des pièges profonds par la charge." Nantes, 2014. http://archive.bu.univ-nantes.fr/pollux/show.action?id=832d9b8a-0f75-4de7-ab4a-836b5de21036.
Full textIn this work, we have focused on defects that can be formed in the film of CIGS obtained by RF sputtering of a quaternary target. For fabrication of diodes, we have set up a four step protocol to deposit reproducible composite thin films. We found that the film composition is different from that of the best absorber layer, but the spectroscopic analyses performed on the obtained films showed that their characteristics matched those of chalcopyrite in CIGS. We have determined the electrical characteristics of Schottky diodes using CIGS as an active layer by current-voltage measurements. We determined the trap parameters of the devices making use of the charge based deep level transient spectroscopy. Two trap groups have been identified: shallow trap group with activation energy (<100meV) and deep trap group (>100meV). The trap density is sensitive to the nature of the interfacial regions between the compound and the electrode showing that the Schottky contact impacts strongly on defect formations
Peng, Li-Huei, and 彭立暉. "Formation of CuInGaSe 2 by eletrodeposition." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/85896487021470709214.
Full text雲林科技大學
材料科技研究所
98
In this study, the CuInGaSe 2 is prepared by electrodeposition. First of all, Cu is electrodeposited onto stainless steel and to find out the best condition to deposit Cu by changing different parameters. Second, Indium and Gallium were electrodeposited by using Orthogonal array of L 18 . Final, that the In/Cu/S.S. and In/Ga/Cu/S.S be selenized, and the selenized condition is heated at 500℃ for 1hour in Argon atmosphere. The CIGS should be characterized by XRD, FE-SEM and EDS. The results show the best parameters for the electrodeposition of Cu/In layer by Taguchi method (current : 25mA, pH : 11, InCl 3 solution: 150mM and KNaC 4 H 4 O 6．4H 2 O solution: 1M and the deposition time is 30 minutes.) The results show the best parameters for the electrodeposition of Cu/Ga layer by Taguchi method (current : 60mA, pH : 11.5, GaCl 3 solution : 75mM and C 6 H 5 Na 3 O 7 solution : 1M and the deposition time is 40 minutes.) After selenided, by using XRD, CIS phase has be found in In/Cu/S.S. and CGS phase has be found in In/Ga/Cu/S.S.. After EDS analysis, the content of In in In/Ga/Cu/S.S. is too low to make it to be CIGS.
Chuang, Tsung-Yeh, and 莊宗曄. "Selenium treatment study of sputtered CuInGaSe thin film." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/29594841024252516071.
Full text國立高雄大學
電機工程學系碩士班
97
In this dissertation, we study the deposition of Copper Indium Gallium Selenium ( CIGS ) thin-film on glass substrate by sputtering with followed selenium heat treatment. Deposition parameters such as power, temperature and gas flow were studied. Following heat treatment parameters such as temperature and gases were studied also. Film morphology, concentration and mobility for these films were analyzed. With controlled parameters, p-type CIGS thin-films can be achieved and p-n diode were fabricated by deposition the CIGS film on n-type Si substrate. The current-voltage behavior and spectral responsivity were characterized for this diode.
Chiang, Min-Yi, and 江旻益. "Synthesis of CuInGaSe2, CuInSSe, CuInGaSSe nanocrystals and their application on thin film solar cell." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/65120142676117583406.
Full textJha, Shian-fei, and 查顯飛. "The study of characteristics of CuInGaSe (CIGS) thin films by RF-sputtering on single target and the different selenizations on thin films." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/91578955307061688442.
Full text國立臺南大學
電機工程學系碩士班
100
CIGS thin film solar cells, has been recognized as one of the most promising absorber materials. For improving the absorber layer characteristics of solar cells, it is essential to followed selenization heat treatment process. The dissertation mainly uses Copper Indium Gallium Selenium (CIGS) single quaternary alloy target, which can simplify the process control. The power was kept at 100w and substrate temperature was 400 ℃ to deposit on the substrate, absorption precursor layer CIGS by RF-sputtering was obtained. By controlling different selenization heat treatment parameters, p-type and low resistivity CIGS thin film absorption layer can be fabricated. Furthermore, it was observe that the thin film with larger grain size as selenization temperature was 550℃, and the selenization holding temperature time was 30 minutes, crystal structure with better quality. From the Raman spectra signal peak gave an evidence of the formation of the CIGS quaternary compounds, and the energy band gap can be easily reached the above of 1eV. Therefore, this studies investigated for the enhanced reasons of CIGS thin film absorber layer, and it was expect to provide a better heat selenization method for effective enhancement.
Chen, Chiayin, and 陳佳吟. "Synthesis and Fabrication of CuInGaSe2." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/07637430984112246594.
Full text國立中正大學
光機電整合工程研究所
99
In this study, we carriered out the ink by solvothermal method. The selenide compounds and the nitrate compound of copper, indium, and gallium were dissolved in alcohol then mix them well as a precursor. Then add the appropriate bonding agent and dispersing agent for viscosity adjustment, so that it can be uniform and completely coating on the glass substrate. By using this method, we have fabricated thin film of copper indium gallium selenide successfully. And we found that as annealing temperature increases, the intensity of X-ray diffraction peak increases and the location will be slightly shift; the lattice constant will result in be different. Experimental results show that after adding the dispersant agent in the precursor, heat stirring under atmospheric environment, and annealing in the the right amount of hydrogen gas will be available to increasing the intensity of X-ray diffraction peak and obtain larger grain size. After the measurement of sheet resistence by four-point probe, we had calculated the resistivity of our sample and obtain the best valude is 0.406 Ω-cm. Comparing with other research, our sample has higher conductivity.
Hsu, Hung Ru, and 許弘儒. "A study of Ga distribution and grain growth in a high efficient CuInGaSe2 solar cell prepared in a sputtering process using a single CuInGa precursor." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/06157342137187098885.
Full text國立清華大學
光電工程研究所
100
Chalcopyrite compounds of Cu(In,Ga)Se2 and related alloys are among the most promising materials for photovoltaic applications. Sputtering of Cu-In-Ga precursors followed by selenization has been a preferred industrial process for Cu(In,Ga)Se2 solar cell manufacturing. In a sputtering process, many studies using co-sputtering or sequential sputtering from CuGa and In magnetron targets for preparation of the metallic precursors. In this study, the metallic precursors were deposited by sputtering a single Cu-In-Ga ternary target and compared with the In/CuGa stocked precursors and these samples were selenized using the Se vapor. It was observed that Ga tends to segregate near the Mo electrode after selenization thus reducing the band gap of the Cu(In,Ga)Se2 absorber near the surface. Since the open circuit voltage (Voc) depends on the band gap in the space charge region (SCR) near the surface of absorber. The device fabricated using this process, however, tends to have a relatively low Voc value due to the Ga element migration to near the Mo electrode. 一、Proposed and demonstrated a novel sandwiched precursor structure we demonstrated a novel sandwiched structure to improve the Ga distribution and grain growth in the absorption layer and thus increase the open circuit voltage Voc and Jsc. We discuss the employment of a novel precursor structure using a single CuInGa layer sandwiched between thin CuGa and In layers. This precursor structure was constructed by having a thin CuGa film on top of the CuInGa ternary layer and a thin In layer to the bottom of the CuGa/CuInGa stacked layer. It is observed that when a thin CuGa film was sputtered on top of the surface of CuInGa ternary precursor, it enhanced the grain growth of Cu(In,Ga)Se2 absorber and increased the Ga concentration in the space charge region, therefore improved the open circuit voltage (Voc). In addition, we observed when a thin In layer was added to the bottom of CuGa/CuInGa stacked layer, it reduced the minimum band gap of devices, and therefore increased the absorption of solar spectrum. By employing this novel structure, the open circuit voltage for the solar cell devices in our studies increased by 18.2% (from 390 mV to 460 mV), the short current density by 13.8% (from 29 mA/cm2 to 33 mA/cm2), and the conversion efficiency by 50 % (from 6.26 % to 9.52 %). 二、Investigation of selenization and sulferization process we discuss three kinds of selenization methods including (a) the RTP process, (b) H2Se selenization process and (c) sulferization after selenization process which were used in studying the Ga distribution and grain growth of Cu(In,Ga)Se2 absorbers under these three selenization processes. In an experiment study of selenization using RTP, our result shows by shortening the annealing time, CuGaSe2 and CuInSe2 would produce almost within the same time and therefore could reduce the segregation of Ga into the bottom of Cu(In,Ga)Se2 absorber. These experiments directly confirmed that the segregation of Ga element due to a difference in the formation temperature of the CuGaSe2 phase higher than that of the CuInSe2 phase. From the results of our study of the H2Se selenization process using XPS and SEM analyses, it further suggests a higher selenization temperature did not affect the Ga distribution in the absorber, however, it could enhance the grain growth near the bottom of Cu(In,Ga)Se2 absorber. As a result, it lead to an increase of the conversion efficiency of the solar cell devices from 9.5% to 12.8%; an enhancement of about 34%. From the experiment results of sulferization after the selenization process, the sulfur element incorporate into the Cu(In,Ga)Se2 absorber would form smaller grains. By comparing the results of GIXRD and SEM, it suggests that a lower selenization temperature would increases the S content in the surface area of Cu(In,Ga)(Se,S)2 film and form smaller grains of absorber and the energy band gap of the absorber. As a result, by using sulferization after the selenization process, the open circuit voltage (Voc ) of the device was further improved by 10%, and the overall conversion efficiency of the solar cell devices increased by about 10% from 12.8% to 14%. 三、Near infrared enhancement in Cu(In,Ga)Se2-based solar Near infrared enhancement in Cu(In,Ga)Se2-based solar cells utilizing a ZnO:H window layer were also investigated in this study. The hydrogen atoms incorporated into a ZnO film as a shallow donor could decrease the resistivity of ZnO film. The ZnO:H film has sa imilar resistivity to that of the ZnO:Al film of about 1.29×10-3 Ω-cm. The advantage of ZnO:H film is higher Hall mobility than ZnO:Al film and thus the carrier concentration of ZnO:H film is lower than that of ZnO:Al film which can decrease free carrier absorption in the NIR. It is found that the cell efficiency is enhanced by 4.8% for the ZnO:H device. This is attributed to the fact that the ZnO:H film has higher transmittance than the ZnO:Al film in the NIR which results in the improvement of short-circuit current (Jsc) from 34.5 to 35.6 mA/cm2.
Book chapters on the topic "CuInGaSe"
Romeo, Alessandro. "CdTe and CuInGaSe2 Thin-Film Solar Cells." In Solar Cells and Modules, 197–217. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-46487-5_8.
Full textCheng, Yu-Wen, Hong-Tao Xue, Fu-Ling Tang, and Jingbo Louise Liu. "First-Principles Simulations for CuInGaSe2 (CIGS) Solar Cells." In Nanostructured Materials for Next-Generation Energy Storage and Conversion, 45–74. Berlin, Heidelberg: Springer Berlin Heidelberg, 2019. http://dx.doi.org/10.1007/978-3-662-59594-7_2.
Full textRzheutski, Mikalai V., E. V. Lutsenko, G. P. Yablonskii, C. Mauder, H. Behmenburg, H. Kalisch, M. Heuken, V. Jmeric, S. V. Ivanov, and V. Y. Shiripov. "Investigation of GaN- and CuInGaSe2-Based Heterostructures for Optoelectronic Applications." In NATO Science for Peace and Security Series B: Physics and Biophysics, 443–44. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-94-007-5313-6_53.
Full textRizwan, M. "Introduction, Past and Present Scenario of Solar Cell Materials." In Materials Research Foundations, 1–23. Materials Research Forum LLC, 2021. http://dx.doi.org/10.21741/9781644901410-1.
Full textConference papers on the topic "CuInGaSe"
Babu, B. J., S. Velumani, Arturo Morales-Acevedo, and R. Asomoza. "Properties of CuInGaSe thin films prepared by chemical spray pyrolysis." In 2010 7th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE 2010) (Formerly known as ICEEE). IEEE, 2010. http://dx.doi.org/10.1109/iceee.2010.5608628.
Full textHoque, Md Mayrazul, Md Zunaid Baten, Md Abdullah Zubair, and Redwan N. Sajjad. "Optimizing chemical bath deposition of cadmium sulfide for CuInGaSe based semi-transparent photovoltaics." In 2021 IEEE International Conference on Telecommunications and Photonics (ICTP). IEEE, 2021. http://dx.doi.org/10.1109/ictp53732.2021.9744213.
Full textPern, F. J. John, and Rommel Noufi. "Characterization of damp heat degradation of CuInGaSe 2 solar cell components and devices by (electrochemical) impedance spectroscopy." In SPIE Solar Energy + Technology, edited by Neelkanth G. Dhere, John H. Wohlgemuth, and Kevin W. Lynn. SPIE, 2011. http://dx.doi.org/10.1117/12.895918.
Full textRamanathan, K., M. A. Contreras, J. R. Tuttle, J. Keane, J. Webb, S. Asher, D. Niles, et al. "Effect of heat treatments and window layer processing on the characteristics of CuInGaSe/sub 2/ thin film solar cells." In Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996. IEEE, 1996. http://dx.doi.org/10.1109/pvsc.1996.564258.
Full textDevaney, W. E., W. S. Chen, J. M. Stewart, and B. J. Stanbery. "Analysis of high efficiency CuInGaSe2 based solar cells." In Photovoltaic advanced research and development project. AIP, 1992. http://dx.doi.org/10.1063/1.42908.
Full textHsieh, Tung-Po, Chia-Chih Chuang, Chung-Shin Wu, Jen-Chuan Chang, Jhe-Wei Guo, and Wei-Chien Chen. "Effects of residual copper selenide on CuInGaSe2 solar cells." In 2009 34th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2009. http://dx.doi.org/10.1109/pvsc.2009.5411748.
Full textPern, F. J., L. Mansfield, S. Glynn, B. To, C. DeHart, S. Nikumb, C. Dinkel, et al. "All-laser scribing for thin-film CuInGaSe2 solar cells." In 2010 35th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2010. http://dx.doi.org/10.1109/pvsc.2010.5614717.
Full textEliasson, Blake, Garret Moddel, T. Hughes-Lampros, and W. N. Shafarman. "Optically Addressed SLM Incorporating a CuInGaSe2/a-Si:H Heterojunction." In Spatial Light Modulators and Integrated Optoelectronic Arrays. Washington, D.C.: OSA, 1999. http://dx.doi.org/10.1364/slm.1999.swb2.
Full textBiderman, N. J., Steven W. Novak, T. Laursen, R. J. Matyi, R. Sundaramoorthy, Gary Dufresne, John Wax, et al. "Diffusion activation energy of cadmium in thin film CuInGaSe2." In 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). IEEE, 2013. http://dx.doi.org/10.1109/pvsc.2013.6744499.
Full textPern, F. J., F. Yan, L. Mansfield, S. Glynn, M. Rekow, and R. Murison. "Performance characterization and remedy of experimental CuInGaSe2 mini-modules." In 2011 37th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2011. http://dx.doi.org/10.1109/pvsc.2011.6186526.
Full textReports on the topic "CuInGaSe"
Stanbery, B. J. Manufacturing technology development for CuInGaSe sub 2 solar cell modules. Office of Scientific and Technical Information (OSTI), November 1991. http://dx.doi.org/10.2172/5916144.
Full textStanbery, B. J. Manufacturing technology development for CuInGaSe{sub 2} solar cell modules. Final subcontract report, 9 January 1991--14 April 1991. Office of Scientific and Technical Information (OSTI), November 1991. http://dx.doi.org/10.2172/10114404.
Full textDevaney, W. E., W. S. Chen, and J. M. Stewart. High-efficiency CuInSe/sub 2/ and CuInGaSe/sub 2/ based cells and materials research: Annual subcontract report, 1 November 1987--31 October 1988. Office of Scientific and Technical Information (OSTI), June 1989. http://dx.doi.org/10.2172/5921666.
Full textChen, W. S., J. M. Stewart, R. A. Mickelsen, W. E. Devaney, and B. J. Stanbery. Research on Polycrystalline Thin-Film CuInGaSe2 Solar Cells: Annual Subcontract Report, 3 May 1991 - 21 May 1993. Office of Scientific and Technical Information (OSTI), October 1993. http://dx.doi.org/10.2172/10185949.
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