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Journal articles on the topic 'Cu2ZnSnS4'

Author: Grafiati
Published: 4 June 2021
Last updated: 7 September 2023

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1

Солован, М. Н., А. И. Мостовой, С. В. Биличук, F. Pinna, T. T. Ковалюк, В. В. Брус, Э. В. Майструк, И. Г. Орлецкий, and П. Д. Марьянчук. "Структурные и оптические свойства пленок Cu-=SUB=-2-=/SUB=-ZnSn(S,Se)-=SUB=-4-=/SUB=-, полученных методом магнетронного распыления мишени из сплава Cu-=SUB=-2-=/SUB=-ZnSn." Физика твердого тела 59, no. 8 (2017): 1619. http://dx.doi.org/10.21883/ftt.2017.08.44767.32.

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Представлены результаты исследований структурных и оптических свойств тонких пленок Cu2ZnSn(S,Se)4, полученных путем сульфитации (селенизации) пленок Cu2ZnSn, которые были напылены методом магнетронного распыления на постоянном токе с использованием мишени Cu2ZnSn (99.99%) стехиометрического состава. Установлено, что тонкие пленки Cu2ZnSn(S,Se)4 являются поликристаллическими с размерами зерен ~ 60 nm. Определена оптическая ширина запрещенной зоны тонких пленок Cu2ZnSnS4 (Eopg=1.65 eV) и Cu2ZnSnSe4 (Ropg=1.2 eV). А.И. Мостовой благодарит программу HUMERIA за присужденную постдоковскую стипендию. DOI: 10.21883/FTT.2017.08.44767.32
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2

Courel, Maykel, Miriam M. Nicolás, and Osvaldo Vigil-Galán. "Study on the physical properties of Cu2ZnSnS4 thin films deposited by pneumatic spray pyrolysis technique." Applied Chemical Engineering 4, no. 1 (April 27, 2021): 9. http://dx.doi.org/10.24294/ace.v4i1.652.

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The acquisition of new materials for the manufacturing of high efficiency and low-cost photovoltaic devices has currently become a challenge. Thin films of CuInGaSe and CdTe have been widely used in solar cell of second generation, achieving efficiencies about 20 %; however, the low abundance of In and Te as well as the toxicity of Cd is the primary obstacles to their industrial production. Compounds such as Cu2ZnSnS4, Cu2ZnSnSe4 and Cu2ZnSn(SSe)4 have emerged as an important and less costly alternative for efficient energy conversion in the future. In addition, these compounds have the required characteristics to be used as an absorber material in solar cells (band-gap close to 1.4 eV, an absorption coefficient greater than 104 cm-1 and a p-type conductivity). In this work, we present a study of the structural, compositional, morphological and optical properties of Cu2ZnSnS4 thin films deposited by spray pyrolysis technique as well as their dependence on temperature.
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3

Гуртовой, В. Г., and А. У. Шелег. "Влияние ионизирующего излучения на диэлектрические характеристики монокристаллов Cu-=SUB=-2-=/SUB=-ZnSn(S-=SUB=-x-=/SUB=-Se-=SUB=-1-x-=/SUB=-)-=SUB=-4-=/SUB=-." Физика твердого тела 59, no. 2 (2017): 236. http://dx.doi.org/10.21883/ftt.2017.02.44040.263.

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Изучено влияние электронного облучения на проводимость и диэлектрические характеристики монокристаллов Cu2ZnSnS4, Cu2ZnSnSe4 и твердых растворов на их основе. Показано, что с увеличением дозы облучения значения диэлектрической проницаемости уменьшаются, а удельной электропроводности резко возрастают. DOI: 10.21883/FTT.2017.02.44040.263
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4

Pogue, Elizabeth A., Melissa Goetter, and Angus Rockett. "Reaction kinetics of Cu2-xS, ZnS, and SnS2 to form Cu2ZnSnS4 and Cu2SnS3 studied using differential scanning calorimetry." MRS Advances 2, no. 53 (2017): 3181–86. http://dx.doi.org/10.1557/adv.2017.384.

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ABSTRACTDifferential scanning calorimetry experiments on mixed Cu2-xS, ZnS, and SnS2 precursors were conducted to better understand how Cu2ZnSnS4 (CZTS) and Cu2SnS3 form. The onset temperatures of Cu2SnS3 reactions and CZTS suggest that the ZnS phase may mediate Cu2SnS3 formation at lower temperatures before a final CZTS phase forms. We also found no evidence of a stable Cu2ZnSn3S8 phase. The major diffraction peaks associated with Cu2ZnSnS4, and Cu2SnS3 (overlaps with ZnS, as well) began to grow around 380 °C, although the final reaction to form Cu2ZnSnS4 probably did not occur until higher temperatures were reached. An exothermic reaction was observed corresponding to formation of this phase. There was some variability in the onset temperature for reactions to form Cu2SnS3. At least 5 steps are involved in this reaction and several segments of the reaction had relatively reproducible energies.
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5

Mukherjee, Binayak, Eleonora Isotta, Carlo Fanciulli, Narges Ataollahi, and Paolo Scardi. "Topological Anderson Insulator in Cation-Disordered Cu2ZnSnS4." Nanomaterials 11, no. 10 (October 1, 2021): 2595. http://dx.doi.org/10.3390/nano11102595.

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We present the first candidate for the realization of a disorder-induced Topological Anderson Insulator in a real material system. High-energy reactive mechanical alloying produces a polymorph of Cu2ZnSnS4 with high cation disorder. Density functional theory calculations show an inverted ordering of bands at the Brillouin zone center for this polymorph, which is in contrast to its ordered phase. Adiabatic continuity arguments establish that this disordered Cu2ZnSnS4 can be connected to the closely related Cu2ZnSnSe4, which was previously predicted to be a 3D topological insulator, while band structure calculations with a slab geometry reveal the presence of robust surface states. This evidence makes a strong case in favor of a novel topological phase. As such, the study opens up a window to understanding and potentially exploiting topological behavior in a rich class of easily-synthesized multinary, disordered compounds.
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6

Persson, Clas. "Electronic and optical properties of Cu2ZnSnS4 and Cu2ZnSnSe4." Journal of Applied Physics 107, no. 5 (March 2010): 053710. http://dx.doi.org/10.1063/1.3318468.

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7

Gonce, Mehmet K., Melike Dogru, Emre Aslan, Faruk Ozel, Imren Hatay Patir, Mahmut Kus, and Mustafa Ersoz. "Photocatalytic hydrogen evolution based on Cu2ZnSnS4, Cu2ZnSnSe4 and Cu2ZnSnSe4−xSx nanofibers." RSC Advances 5, no. 114 (2015): 94025–28. http://dx.doi.org/10.1039/c5ra18877f.

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New photocatalytic systems for H2 evolution have been reported by using Cu2ZnSnS4, Cu2ZnSnSe4, and Cu2ZnSnSe4−xSx nanofiber catalysts under visible light irradiation.
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8

Lin, Xianzhong, Jaison Kavalakkatt, Martha Ch Lux-Steiner, and Ahmed Ennaoui. "Air-stable solution processed Cu2ZnSn(Sx,Se(1-x))4 thin film solar cells: influence of ink precursors and preparation process." MRS Proceedings 1538 (2013): 107–14. http://dx.doi.org/10.1557/opl.2013.1024.

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ABSTRACTQuaternary semiconductors, Cu2ZnSnS4 and Cu2ZnSnSe4 which contain only earth-abundant elements, have been considered as the alternative absorber layers to Cu(In,Ga)Se2 (CIGS) for thin film solar cells although CIGS-based solar cells have achieved efficiencies over 20 %. In this work we report an air-stable route for preparation of Cu2ZnSn(Sx,Se(1-x))4 (CZTSSe) thin film absorbers by a solution process based on the binary and ternary chalcogenide nanoparticle precursors dispersed in organic solvents. The CZTSSe absorber layers were achieved by spin coating of the ink precursors followed by annealing under Ar/Se atmosphere at temperature up to 580°C. We have investigated the influence of the annealing temperature on the reduction or elimination of detrimental secondary phases. X-ray diffraction combined with Raman spectroscopy was utilized to better identify the secondary phases existing in the absorber layers. Solar cells were completed by chemical bath deposited CdS buffer layer followed by sputtered i-ZnO/ZnO: Al bi-layers and evaporated Ni/Al grids.
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9

Kovaliuk, T. T., E. V. Maistruk, M. N. Solovan, I. P. Koziarskyi, and P. D. Maryanchuk. "Study on Cu2ZnSnSe4 crystals and heterojunctions on their basis." Технология и конструирование в электронной аппаратуре, no. 5-6 (2018): 37–43. http://dx.doi.org/10.15222/tkea2018.5-6.37.

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The most promising materials for the solar radiation converters are such compounds as CdTe and Cu(In, Ga)Se2, CuIn(S, Se)2, CuGa(S, Se)2 solid solutions. However, the uneconomic nature of Cd, Te and the limited supply of In and Ga, as well as their high cost, force researchers to replace In and Ga with the more common elements of II and IV groups, namely Zn and Sn. Apart from that, researchers are now testing such new semiconductor compounds as Cu2ZnSnS4, Cu2ZnSnSe4, and solid solutions on their basis. These compounds have a band gap width (Eg ≈ 1.5 eV) close to optimal for the conversion of solar energy, a high light absorption coefficient (≈ 105cm–1), a long lifetime and a high mobility of charge carriers. Moreover, the interest in such semiconductor heterojunctions as TiO2/Cu2ZnSnS4, which have several advantages over homo-transitions, is steadily growing at present. The paper presents results studies of kinetic properties of Cu2ZnSnSe4 crystals. We fabricated n-TiO2/p-Cu2ZnSnSe4 anisotype heterojunctions, determined their main electrical parameters and built their energy diagram. The Cu2ZnSnSe4 crystals have p-type conductivity and the Hall coefficient practically independent of temperature. The temperature dependence of the electrical conductivity σ for Cu2ZnSnSe4 crystalsis metallic in character, i. e. σ decreases with increasing temperature, which is caused by a decrease in the mobility of the charge carriers with the growth of T. Thermoelectric power for the samples is positive, which also indicates the prevalence of p-type conductivity. In this study, the n-TiO2/p-Cu2ZnSnSe4 heterojunctions were produced by reactive magnetron sputtering of a thin TiO2 film on the Cu2ZnSnSe4 substrate. The energy diagram of the investigated n-TiO2/p-Cu2ZnSnSe4 anisotype heterojunctions was constructed in accordance with the Anderson model, without taking into account the surface electrical states and the dielectric layer, based on the values of the energy parameters of semiconductors determined experimentally and taken from literary sources. The authors have also investigated electrical properties of the heterojunctions: the value of the potential barrier was determined, the value of the series resistance and shunt resistance (respectively, Rs = 8 W and Rsh = 5.8 kW) at room temperature. The dominant mechanisms of current transfer were established: tunneling-recombination mechanism in the voltage range from 0 to 0.3 V, and over-barrier emission and tunneling with inverse displacement in the voltage range from 0.3 to 0.45 V.
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10

Botti, Silvana, David Kammerlander, and Miguel A. L. Marques. "Band structures of Cu2ZnSnS4 and Cu2ZnSnSe4 from many-body methods." Applied Physics Letters 98, no. 24 (June 13, 2011): 241915. http://dx.doi.org/10.1063/1.3600060.

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11

Zheng, Yi-Feng, Ji-Hui Yang, and Xin-Gao Gong. "Cu-Zn disorder in stoichiometric and non-stoichiometric Cu2ZnSnS4/Cu2ZnSnSe4." AIP Advances 9, no. 3 (March 2019): 035248. http://dx.doi.org/10.1063/1.5090804.

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12

Stolyarova, T. A., E. G. Osadchii, and A. V. Baranov. "Standard enthalpy of formation kesterite Cu2ZnSnS4." Геохимия 64, no. 1 (January 15, 2019): 101–4. http://dx.doi.org/10.31857/s0016-7525641101-104.

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The standard enthalpy of kesterite formation (Cu2ZnSnS4) is calculated from the calorimetric determinations of the enthalpy of its formation from simple sulphides: 2CuS + ZnS + SnS → Cu2ZnSnS4 using literature data on the standard enthalpies of the formation of simple sulphides. As a result, the standard enthalpy of kesterite formation was determined: ΔfHo298.15 (Cu2ZnSnS4) = -(467.62±2.28) kJ mol-1.
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13

Xie, Meng, Hai Tao Zhang, Shu Zhang, and Yong Xiang. "Fabrication of Cu2ZnSnS4 Thin Films through Sulfurization of Co-Electrodeposited Cu-Zn-Sn Metallic Precursor." Advanced Materials Research 915-916 (April 2014): 838–41. http://dx.doi.org/10.4028/www.scientific.net/amr.915-916.838.

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Cu2ZnSnS4 thin films have been synthesized through sulfurization of co-electrodeposited Cu-Zn-Sn metallic precursor. The obtained metallic precursor shows homogeneous surface. Combination of X-ray diffraction, energy dispersive X-Ray spectroscopy and Raman spectroscopy results shows that kesterite structure of Cu2ZnSnS4 is formed, demonstrating that co-electrodeposition-sulfurization is a viable process for the synthesis of Cu2ZnSnS4 film.
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14

Qiu, Lei, Jiaxiong Xu, and Xiao Tian. "Fabrication of Ag and Mn Co-Doped Cu2ZnSnS4 Thin Film." Nanomaterials 9, no. 11 (October 25, 2019): 1520. http://dx.doi.org/10.3390/nano9111520.

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Ag and Mn dopants were incorporated into Cu2ZnSnS4 thin film to reduce defects in thin film and improve thin film properties. Sol–gel and spin-coating techniques were employed to deposit Ag and Mn co-doped Cu2ZnSnS4 thin films. The structures, compositions, morphologies, and optical properties of the co-doped thin films were characterized. The experimental results indicate the formation of kesterite structure without Ag and Mn secondary phases. The amount of Ag in the thin films is close to that in the sols. The co-doped Cu2ZnSnS4 thin films have an absorption coefficient of larger than 1.3 × 104 cm−1, a direct optical band gap of 1.54–2.14 eV, and enhanced photoluminescence. The nonradiative recombination in Cu2ZnSnS4 thin film is reduced by Ag and Mn co-doping. The experimental results show that Ag and Mn incorporation can improve the properties of Cu2ZnSnS4 thin film.
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15

Li, Jie, Wei Guang Yang, Wei Min Shi, Ji Rong Li, and Lin Jun Wang. "Study and Preparation of Pure-Phase Cu2ZnSnS4 Nanocrystals by Solvothermal Method." Applied Mechanics and Materials 271-272 (December 2012): 8–11. http://dx.doi.org/10.4028/www.scientific.net/amm.271-272.8.

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The as-prepared high-quality Cu2ZnSnS4 nanocrystals were prepared by solvothermal method. The influence of the reaction temperature, growth time and mixed solvent on the structural and composition of the Cu2ZnSnS4 nanocrystals was investigated. XRD result shows the percentage of ethylenediamine in the mixed solvent have an important influence in the synthesis process of pure-phase Cu2ZnSnS4 nanocrystals. EDS result proves the particles belong to Cu rich and Zn poor composition.
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16

Allawi, Nabaa H., and Selma M. H. Al-Jawad. "Toward Phase Pure CZTS Film-Based Solar Cell Prepared by the One-Step Hydrothermal Method: Influence of Copper Concentration." ECS Journal of Solid State Science and Technology 12, no. 7 (July 1, 2023): 075001. http://dx.doi.org/10.1149/2162-8777/ace214.

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Herein, the first paper for preparing Cu2ZnSnS4 film using EDTA as a complex agent by one-step hydrothermal method. The efficient Molybdenum oxide (MoO3) layer was also grown by the same step as preparing the Cu2ZnSnS4 film. The effects of different copper concentrations on the structural, optical, and electrical properties were studied. X-ray diffraction and Raman analyses confirmed the formation of polycrystalline kesterite phase Cu2ZnSnS4 films with preferred orientation along (112) plane and showed that structure property alters with copper concentration: at lower copper concentration single kesterite phase Cu2ZnSnS4 was formed, while with increasing copper concentration kesterite Cu2ZnSnS4 and secondary phases were formed. Field emission scanning electron microscopy revealed a mixture of micro-flower and a thin network of nanoflakes morphology. In addition, it showed as copper concentration changes the grain size of micro-flower and thickness of flakes change. UV-visible analysis showed high and broad absorbance spectra with high absorption coefficient values of more than 104 cm−1 in visible and infrared regions.also, predicted the band gap of single-phase Cu2ZnSnS4 film equal to 1.4 eV. Photoluminescence analysis demonstrated a single emission peak located at 1.55 eV which is quite near to the band gap of kesterite Cu2ZnSnS4. Hall measurement showed the single phase sample is a p-type semiconductor with a resistivity of 5 Ω cm, a charge carrier concentration of 7.5 × 1016 cm−3 and mobility of 16 cm2 Vs−1. Finally, a heterojunction solar cell was made with Mo foil/MoO3/CZTS/Zn0.35Cd0.65S/ZnO/Al configuration. A photovoltaic conversion efficiency of (2.17%) was attained under 100 mW cm−2 with an open-circuit voltage of (0.432) V, short-circuit current density of (13.4) mA cm−2 and a fill factor of (37.5%).
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17

Gour, Kuldeep S., Rahul Parmar, Rahul Kumar, and Vidya N. Singh. "Cd-Free Zn(O,S) as Alternative Buffer Layer for Chalcogenide and Kesterite Based Thin Films Solar Cells: A Review." Journal of Nanoscience and Nanotechnology 20, no. 6 (June 1, 2020): 3622–35. http://dx.doi.org/10.1166/jnn.2020.17537.

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Cd is categorized as a toxic material with restricted use in electronics as there are inherent problems of treating waste and convincing consumers that it is properly sealed inside without any threat of precarious leaks. Apart from toxicity, band-gap of CdS is about 2.40–2.50 eV, which results significant photon loss in short-wavelength range which restricts the overall performance of solar cells. Thin film of Zn(O,S) is a favorable contender to substitute CdS thin film as buffer layer for CuInGaSe2 (CIGS), CuInGa(S,Se)2 (CIGSSe), Cu2ZnSn(S,Se)4 (CZTSSe) Cu2ZnSnSe4 (CZTSe), Cu2ZnSnS4 (CZTS) thin film absorber material based photovoltaic due to it made from earth abundant, low cost, non-toxic materials and its ability to improve the efficiency of chalcogenide and kesterite based photovoltaic due to wider band-gap which results in reduction of absorption loss compared to CdS. In this review, apart from mentioning various deposition technique for Zn(O,S) thin films, changes in various properties i.e., optical, morphological, and opto-electrical properties of Zn(O,S) thin film deposited using various methods utilized for fabricating solar cell based on CIGS, CIGSSe, CZTS, CZTSe and CZTSSe thin films, the material has been evaluated for all the properties of buffer layer (high transparency for incident light, good conduction band lineup with absorber material, low interface recombination, high resistivity and good device stability).
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18

Mkawi, E. M., K. Ibrahim, M. K. M. Ali, M. A. Farrukh, and Abdussalam Salhin Mohamed. "Synthesized and Characterization of Cu2ZnSnS4 (CZTS) Thin Films Deposited by Electrodeposition Method." Applied Mechanics and Materials 343 (July 2013): 85–89. http://dx.doi.org/10.4028/www.scientific.net/amm.343.85.

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Cu2ZnSnS4(CZTS) thin films was potentiostatically deposited on molybdenum coated glass substrates using the electrochemical deposition method As-deposited and annealed in furnace, The polycrystalline CZTS thin films with tetragonal crystal structure have been studied from structural analysis results , XRD and Raman spectroscopy results show these thin films exhibit a strong preferential orientation along the (112), The energy gap of Cu2ZnSnS4 was estimated to be 1.8 eV via ultravioletvisible (UVvis) absorption spectrum of Cu2ZnSnS4 which suggests that CZTS films Can be useful as an absorber layer in thin film solar cells.
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19

Yang, Xiufan, Xinmao Qin, Wanjun Yan, Chunhong Zhang, Dianxi Zhang, and Benhua Guo. "Electronic Structure and Optical Properties of Cu2ZnSnS4 under Stress Effect." Crystals 12, no. 10 (October 14, 2022): 1454. http://dx.doi.org/10.3390/cryst12101454.

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By using the pseudopotential plane-wave method of first principles based on density functional theory, the band structure, density of states and optical properties of Cu2ZnSnS4 under isotropic stress are calculated and analyzed. The results show that Cu2ZnSnS4 is a direct band gap semiconductor under isotropic stress, the lattice is tetragonal, and the band gap of Cu2ZnSnS4 is 0.16 eV at 0 GPa. Stretching the lattice causes the bottom of the conduction band of Cu2ZnSnS4 to move toward lower energies, while the top of the valence band remains unchanged and the band gap gradually narrows. Squeezing the lattice causes the bottom of the conduction band to move toward the high-energy direction, while the top of the valence band moves downward toward the low-energy direction, and the Cu2ZnSnS4 band gap becomes larger. The static permittivity, absorption coefficient, reflectivity, refractive index, electrical conductivity, and energy loss function all decrease when the lattice is stretched, and the above optical parameters increase when the lattice is compressed. When the lattice is stretched, the optical characteristic peaks such as the dielectric function shift to the lower-energy direction, while the optical characteristic peak position shifts to the higher-energy direction when the lattice is compressed.
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20

Yang, Xiufan, Xinmao Qin, Wanjun Yan, Chunhong Zhang, and Dianxi Zhang. "Effects of Fe and Ni Doping on the Electronic Structure and Optical Properties of Cu2ZnSnS4." Crystals 13, no. 7 (July 11, 2023): 1082. http://dx.doi.org/10.3390/cryst13071082.

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This study evaluated the electronic structure and optical properties of Fe-doped, Ni-doped, and (Fe,Ni)-co-doped Cu2ZnSnS4 through the first-principles pseudopotential plane-wave method based on density functional theory. The results indicated that Fe single-doping and Ni single-doping Cu2ZnSnS4 can reduce the charge transfer number of adjacent S atoms, enhancing covalent bonding in Fe–S and Ni–S bonds and reducing the bond length, lattice constants a and c, and unit cell volume v. The formation energies for Fe-doping, Ni-doping, and (Fe,Ni)-co-doping were 1.0 eV, 0.58 eV, and 0.78 eV, respectively. Both Fe and Ni-doping introduced 3d electrons near the Fermi level, resulting in new impurity levels and a gradual decrease in the band gap of Cu2ZnSnS4 from 0.16 eV. The conduction band density of Cu2ZnSnS4 was primarilycontributed by Sn 5s, Sn 5p, and a portion of S 3p orbital electrons, whereas the valence band density mainly stemmed from Cu 3d, Sn 5p, and S 3p orbital electrons. Fe and Ni-doping also partly contributed to the 3d layer electrons. In the case of (Fe,Ni)-co-doping, the maximum static dielectric constant was 100.49, and the dielectric peak shifted toward the low-energy direction in the presence of both Fe and Ni. Within the visible light range, Fe-doping, Ni-doping, and (Fe,Ni)-co-doping in Cu2ZnSnS4 exhibited absorption coefficients greater than 104 cm−1, with the maximum absorption coefficient being 1.6 × 105 cm−1 in the case of (Fe,Ni)-co-doping. In the energy range from 1.5 to 6.3 eV, the reflectivity of Cu2ZnSnS4 doped with Fe, Ni, or both was lower than 30%. Notably, a high conductivity peak at 1.9 eV indicated that Cu2ZnSnS4 possesses good photoconductivity in the visible range. Fe-doping and Ni-doping resulted in a slight shift of the conductance peak position towardthe low-energy direction, accompanied by an increase in the peak value.
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21

Jafarov, Maarif Ali, E. F. Nasirov, and S. A. Jahangirova. "ZnS/Cu2ZnSnS4/CdTe/In Thin Film Structure for Solar Cells." JOURNAL OF ADVANCES IN PHYSICS 14, no. 2 (June 5, 2018): 5435–41. http://dx.doi.org/10.24297/jap.v14i2.7395.

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A solar cell with glass/ITO/ZnS/Cu2ZnSnS4/CdTe/In structure has been fabricated using all-electrodeposited ZnS, Cu2ZnSnS4 and CdTe thin films. The three semiconductor layers were electrodeposited using a two-electrode system for process simplification. The incorporation of a wide bandgap amorphous ZnS as a buffer/window layer to form ITO/ZnS/Cu2ZnSnS4/CdTe/In solar cell resulted in the formation of this 3-layer device structure. This has yielded corresponding improvement in all the solar cell parameters resulting in a conversion efficiency >12% under AM1.5 illumination conditions at room temperature. These results demonstrate the advantages of the multi-layer device architecture over the conventional 2-layer structure.
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22

Rodriguez-Osorio, Karina G., Juan P. Morán-Lázaro, Miguel Ojeda-Martínez, Isaac Montoya De Los Santos, Nassima El Ouarie, El Mustapha Feddi, Laura M. Pérez, et al. "Analytical Modeling and Optimization of Cu2ZnSn(S,Se)4 Solar Cells with the Use of Quantum Wells under the Radiative Limit." Nanomaterials 13, no. 14 (July 12, 2023): 2058. http://dx.doi.org/10.3390/nano13142058.

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In this work, we present a theoretical study on the use of Cu2ZnSn(S,Se)4 quantum wells in Cu2ZnSnS4 solar cells to enhance device efficiency. The role of different well thickness, number, and S/(S + Se) composition values is evaluated. The physical mechanisms governing the optoelectronic parameters are analyzed. The behavior of solar cells based on Cu2ZnSn(S,Se)4 without quantum wells is also considered for comparison. Cu2ZnSn(S,Se)4 quantum wells with a thickness lower than 50 nm present the formation of discretized eigenstates which play a fundamental role in absorption and recombination processes. Results show that well thickness plays a more important role than well number. We found that the use of wells with thicknesses higher than 20 nm allow for better efficiencies than those obtained for a device without nanostructures. A record efficiency of 37.5% is achieved when 36 wells with a width of 50 nm are used, considering an S/(S + Se) well compositional ratio of 0.25.
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23

Skelton, Jonathan M., Adam J. Jackson, Mirjana Dimitrievska, Suzanne K. Wallace, and Aron Walsh. "Vibrational spectra and lattice thermal conductivity of kesterite-structured Cu2ZnSnS4 and Cu2ZnSnSe4." APL Materials 3, no. 4 (April 2015): 041102. http://dx.doi.org/10.1063/1.4917044.

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24

Cao, Vu Minh Han, Jaesung Bae, Joongpyo Shim, Byungyou Hong, Hongsub Jee, and Jaehyeong Lee. "Fabrication of the Cu2ZnSnS4 Thin Film Solar Cell via a Photo-Sintering Technique." Applied Sciences 12, no. 1 (December 21, 2021): 38. http://dx.doi.org/10.3390/app12010038.

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Alternative photo-sintering techniques for thermal annealing processes are used to improve the morphology, layer properties, and enhance solar cell performance. The fast, nontoxic, low cost, and environmentally friendly characteristics of Cu2ZnSnS4 have led to its consideration as an alternative potential absorber layer in copper indium gallium diselenide thin film solar cells. This work investigates the photo-sintering process for the absorber layer of Cu2ZnSnS4 solar cells. A Cu2ZnSnS4 layer was grown by hot-injection and screen-printing techniques, and the characteristics of the photo-sintered Cu2ZnSnS4 layer were evaluated by X-ray Diffraction, Raman spectroscopy, Energy dispersive X-ray analysis, Ultraviolet-visible spectroscopy, and field emission scanning electron microscopes. Overall, the optimal composition was Cu-poor and Zn-rich, without a secondary phase, estimated optical band-gap energy of approximately 1.6 eV, and enhanced morphology and kesterite crystallization. Using an intensity pulse light technique to the CZTS layer, fabrication of the solar cell device demonstrated successfully, and the efficiency of 1.01% was achieved at 2.96 J/cm2.
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Ikeda, Shigeru. "Copper-based kesterite thin films for photoelectrochemical water splitting." High Temperature Materials and Processes 40, no. 1 (January 1, 2021): 446–60. http://dx.doi.org/10.1515/htmp-2021-0050.

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Abstract Copper kesterite Cu2ZnSnS4 is a promising photoabsorber material for solar cells and photoelectrochemical (PEC) water splitting. In this article, we will first review the crystallographic/energetic structures of Cu2ZnSnS4 in view of its applications to sunlight conversion devices. Then, historical progress in photovoltaic properties of Cu2ZnSnS4-based solar cells is introduced. Finally, studies on PEC H2 evolution over Cu2ZnSnS4-based photocathodes are reviewed in detail. For realizing efficient PEC H2 evolution, surface modifications with an n-type buffer layer (such as CdS) and a catalytic site (such as Pt nanoparticles) were found to be indispensable. Since these surface-modified photocathodes had poor resistances under an operating bias due to the occurrence of oxidative photocorrosion of the CdS layer and elimination of the Pt catalysts, coverage with a protection layer was required to improve the long-term durability. Moreover, partial or complete substitution of the constituent cations with some cations was proved to be effective for improving PEC properties. Although recent studies showed a rapid increase in PEC properties, there is room for further development of PEC properties by using effective combinations among surface protection(s), defect engineering(s), and band engineering(s).
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NAGAMALLESWARI, D., Y. B. KISHOREKUMAR, Y. B. KIRAN, and G. SURESHBABU. "EFFECT OF TIN PRECURSORS ON THE DEPOSITION OF Cu2ZnSnS4 THIN FILMS." Chalcogenide Letters 17, no. 10 (October 2020): 505–13. http://dx.doi.org/10.15251/cl.2020.1710.505.

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Cu2ZnSnS4 is a potential compound semiconducting material for solar absorber layer in thin film heterojunction solar cells. Chemical spray pyrolysis technique has been successfully employed to deposit these thin films using two different tin precursors. Thin films were characterized by studying their structural, composition, electrical and optical properties. X-ray diffraction pattern reveals that these films exhibit polycrystalline nature with kesterite structure. Lattice parameters of Cu2ZnSnS4 films are found to be a = b = 0.544 nm and c = 1.084 nm. Optical band gap, evaluated from spectral transmittance data, is close to ideal energy gap (1.5 eV) exhibit highest conversion efficiency. Optical absorption coefficient of these films is ≥ 104 cm-1 . These films exhibit p-type nature. A humble attempt is made to fabricate a typical heterojunction Cu2ZnSnS4 thin film solar cell.
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GU, XIUQUAN, SHUANG ZHANG, YULONG ZHAO, LEI ZHU, and YINGHUAI QIANG. "A COMPARABLE STUDY ON STRUCTURAL AND OPTICAL PROPERTIES OF Cu2ZnSnS4 AND Cu2ZnSnSe4 NANOCRYSTALLINES." International Journal of Modern Physics B 28, no. 04 (January 22, 2014): 1450002. http://dx.doi.org/10.1142/s0217979214500027.

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In this study, single-kesterite-phase Cu 2 ZnSnS 4 (CZTS) and Cu 2 ZnSnSe 4 (CZTSe) nanocrystallines have been synthesized by a simple solvothermal route. Scanning electron microscopy (SEM), X-ray diffraction (XRD), ultraviolet-visible (UV-vis) absorbance and Raman scattering spectroscopy were used to characterize the optical and micro-structure properties of the as-synthesized samples. The bandgap of CZTS could be tuned in a large range by incorporating a few Se atoms. Both the CZTS and CZTSe exhibited the similar temperature dependence of the Raman "A" modes, including a monotonic redshift in peak position and an irregular variation in peak linewidth. Such a behavior might be due to the cumulative effect of thermal expansion and small crystalline sizes.
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28

Fritsch, Daniel. "Revisiting the Cu-Zn Disorder in Kesterite Type Cu2ZnSnSe4 Employing a Novel Approach to Hybrid Functional Calculations." Applied Sciences 12, no. 5 (March 2, 2022): 2576. http://dx.doi.org/10.3390/app12052576.

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In recent years, the search for more efficient and environmentally friendly materials to be employed in the next generation of thin film solar cell devices has seen a shift towards hybrid halide perovskites and chalcogenide materials crystallising in the kesterite crystal structure. Prime examples for the latter are Cu2ZnSnS4, Cu2ZnSnSe4, and their solid solution Cu2ZnSn(SxSe1−x)4, where actual devices already demonstrated power conversion efficiencies of about 13 %. However, in their naturally occurring kesterite crystal structure, the so-called Cu-Zn disorder plays an important role and impacts the structural, electronic, and optical properties. To understand the influence of Cu-Zn disorder, we perform first-principles calculations based on density functional theory combined with special quasirandom structures to accurately model the cation disorder. Since the electronic band gaps and derived optical properties are severely underestimated by (semi)local exchange and correlation functionals, supplementary hybrid functional calculations have been performed. Concerning the latter, we additionally employ a recently devised technique to speed up structural relaxations for hybrid functional calculations. Our calculations show that the Cu-Zn disorder leads to a slight increase in the unit cell volume compared to the conventional kesterite structure showing full cation order, and that the band gap gets reduced by about 0.2 eV, which is in very good agreement with earlier experimental and theoretical findings. Our detailed results on structural, electronic, and optical properties will be discussed with respect to available experimental data, and will provide further insights into the atomistic origin of the disorder-induced band gap lowering in these promising kesterite type materials.
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29

Xu, J. X., and X. Tian. "Deposition of (Ag,Cu)2Zn(Sn,Ge)S4 thin films on Mo-coated glass substrate by vacuum magnetron sputtering and post-sulfurization techniques." Journal of Ovonic Research 18, no. 2 (April 12, 2022): 227–38. http://dx.doi.org/10.15251/jor.2022.182.227.

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Cation substitution is a useful way to improve the properties of semiconducting Cu2ZnSnS4 thin film. In this work, partial Cu and Sn in Cu2ZnSnS4 are substituted by Ag and Ge, respectively. The (Ag,Cu)2Zn(Sn,Ge)S4 thin films were successfully fabricated using vacuum magnetron sputtering and post-sulfurization techniques. The formation of Ag & Ge co-doped Cu2ZnSnS4 structure with secondary phase is proved by XRD and Raman results. The Ag and Ge ratios depend on the composition of Cu-Ag target and the sputtering time of Ge, respectively. The direct optical band gap values of thin films increase with the increase of Ge content. When the sputtering time of Ge is 90 s, the Urbach energy of (Ag,Cu)2Zn(Sn,Ge)S4 thin films reaches the minimum value of 339 meV, revealing the reduced band tail state by Ge incorporation.
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30

Seboui, Zeineb, Abdelaziz Gassoumi, and Najoua Kamoun-Turki. "Evolution of sprayed Cu2ZnSnS4." Materials Science in Semiconductor Processing 26 (October 2014): 360–66. http://dx.doi.org/10.1016/j.mssp.2014.05.004.

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31

Hönes, K., E. Zscherpel, J. Scragg, and S. Siebentritt. "Shallow defects in Cu2ZnSnS4." Physica B: Condensed Matter 404, no. 23-24 (December 2009): 4949–52. http://dx.doi.org/10.1016/j.physb.2009.08.206.

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32

Valdes, M., M. Modibedi, M. Mathe, T. Hillie, and M. Vazquez. "Electrodeposited Cu2ZnSnS4 thin films." Electrochimica Acta 128 (May 2014): 393–99. http://dx.doi.org/10.1016/j.electacta.2013.10.206.

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33

Basri, Katrul Nadia, Noriza Ahmad Zabidi, Hasan Abu Kassim, and Ahmad Nazrul Rosli. "Density Functional Theory (DFT) Calculation of Band Structure of Kesterite." Advanced Materials Research 1107 (June 2015): 491–95. http://dx.doi.org/10.4028/www.scientific.net/amr.1107.491.

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The kesterite, Cu2ZnSnS4has a big potential as a future solar material in replacing current material. Although the kesterite and copper indium gallium selenide, CIGS has almost same structure but the constituent elements of kesterite are earth-abundance, cheaper and non-toxic. The chalcogen elements existed inside the kesterite compound are selenium and sulphur, Cu2ZnSnSe4/ Cu2ZnSnS4. Therefore, the structural flexibility of kesterite opens up an avenue to develop light-absorber material with suitable properties and applications. The density functional theory (DFT) has been used to calculate the total energy of Kesterite developed from Material Studio - CASTEP. The general gradient approximation (GGA) has been choosing to treat the exchange-correlation. The structure of kesterite has been developed by determining its space group, I4 and Pc and its coordination of each atom. The previous calculated shown that the energy of its band gap is around 1.0-1.5 eV.
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34

Hyacinthe Aka, Aka, Amal Bouich, Idrissa Diomandé, Boko Aka, and Bernabé Mari Soucase. "Comparative study between CZTS and CZTSe thin layers for photovoltaic applications." E3S Web of Conferences 412 (2023): 01100. http://dx.doi.org/10.1051/e3sconf/202341201100.

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A comparative study of the thin layer based on copper zinc tin sulphide Cu2ZnSnS4 (CZTS) and that based on copper zinc tin selenide Cu2ZnSnSe4 (CZTSe) was made in order to assess the structural, morphological, optical and electrical qualities. for better use in improving performance of CZTS, CZTSe or CZTSSe based solar cell. CZTS and CZTSe thin films prepared by the spray pyrolysis technique were characterized by X-ray diffraction (XRD) which confirmed their kesterite structure in the tetragonal crystal phase. In addition, the analysis of the surfaces of the thin layers with the scanning electron microscope SEM, showed compact grains, well agglomerated and of appreciable sizes. UV-visible spectroscopy measured the quality of light absorption and located the bandgap energy values between 1.16 eV for CZTSe and 1.69 eV for CZTS i.e. in the range of potential absorbers for CZTS and CZTSe based thin film solar cells.
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35

Moipolai, T. B., M. Madhuku, and S. J. Moloi. "Deposition and Characterization of Metallic Film Precursors for the Synthesis of Cu2ZnSnS4 Thin Films for Photovoltaic Applications." MRS Advances 3, no. 38 (2018): 2247–50. http://dx.doi.org/10.1557/adv.2018.509.

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AbstractCopper Zinc Tin Sulphide (Cu2ZnSnS4) materials are of interest for Photovoltaic applications. In this work, i.e., the first phase of Cu2ZnSnS4 synthesis, Cu-Zn-Sn film precursors were synthesised using electron beam deposition. The crystal structure of the synthesised film precursors were characterised by X-ray Diffraction (XRD) and elemental composition identification performed using Rutherford Backscattering Spectrometry (RBS). The synthesis results obtained are in agreement with those presented in the literature indicating that the metallic CZT film precursors were successfully synthesised.
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36

Dilshod, Nematov, Kholmurodov Kholmirzo, Stanchik Aliona, Fayzullaev Kahramon, Gnatovskaya Viktoriya, and Kudzoev Tamerlan. "On the Optical Properties of the Cu2ZnSn[S1−xSex]4 System in the IR Range." Trends in Sciences 20, no. 2 (November 29, 2022): 4058. http://dx.doi.org/10.48048/tis.2023.4058.

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Following the recent classification by the European Commission of some elements as critical raw materials (CRM), there is an increasing interest in the development of CRM-free thin film photovoltaic (PV) technologies, including kesterite materials. Moreover, starting with the performance breakthrough reported by IBM in 2010, the efficiency of kesterite-based solar cells steadily progressed in the following years achieving. Therefore, in recent years, there has been a significant research effort to develop kesterite-based devices. However, despite the large number of theoretical and experimental works, many aspects of the problem have not yet been fully studied. Therefore, the issues considered in the article, especially the behavior of the absorption and photoconductivity spectra of the Cu2ZnSn[S1−xSex]4 system, depending on the S/Se ratio, are extremely important and, at the same time, one of the topical and poorly studied problems. In this work, using quantum-chemical calculations in the framework of density functional theory (DFT), we study the optical properties of semiconductor nanocrystals of kesterite Cu2ZnSnS4 doped with Se. Using the WIEN2k package, the concentration dependences of the optical characteristics of nanocrystals of the Cu2ZnSn[S1−xSex]4 system (x = 0.00, 0.25, 0.50, 0.75 and 1.00) were calculated. It is shown that doping with Se at the S position leads to a noticeable improvement in the photoabsorbing properties of these nanocrystals, as well as their photoconductivity in the IR range. The calculated absorption and extinction spectra, as well as the refractive indices and permittivity of the materials under study, are compared with experimental data known from the literature. The data obtained will significantly enrich the existing knowledge about the materials under study and will contribute to the expansion of the field of application of these compounds in optoelectronic devices. HIGHLIGHTS With an increase in the Se concentration, the absorbing properties and photoconductivity of the nanocrystals of the Cu2ZnSn[S1−xSex]4 system increase The optical band gap narrows with increasing Se/S ratio Curves k(ω) and α (ω) correspond to the maxima of e2 (w) Pure Cu2ZnSnSe4 has the maximum absorption in the IR range GRAPHICAL ABSTRACT
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37

Hamanaka, Yasushi, and Kojiro Matsumoto. "Non-Vacuum Fabrication of Bandgap-Controlled CZTGS Alloy Films Using CZTS+CZGS Mixed Nanoparticle Inks." Materials Science Forum 1016 (January 2021): 509–15. http://dx.doi.org/10.4028/www.scientific.net/msf.1016.509.

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Semiconductor alloy films of Cu2ZnSn1-xGexS4 (CZTGS) were prepared by deposition and sintering of mixed nanoparticle suspensions composed of Cu2ZnSnS4 (CZTS) and Cu2ZnGeS4 (CZGS) nanoparticles with 1-dodecanethiol surfactant. Colloidal CZTS and CZGS nanoparticles were synthesized via the liquid-phase route and used without post-processing treatment. The CZTGS films are crystallized in the form of kesterite structures and form an alloy of CZTS and CZGS without an apparent phase separation. The Sn/Ge ratios in the alloy films were finely controlled by tuning a mixing ratio between CZTS and CZGS nanoparticles. The bandgap energy of the CZTGS film systematically increased from 1.6 to 2.1 eV as the Ge-substitution for Sn in the films proceeded, which indicates the potential of the fabrication method in the manufacture of bandgap-tuned multinary semiconductor thin films.
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38

Buthina M. Jandary and Ayed N. Saleh. "Simulation of CZTSSe single solar cells by AFORS-HET software." Tikrit Journal of Pure Science 25, no. 2 (March 17, 2020): 71–80. http://dx.doi.org/10.25130/tjps.v25i2.238.

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In this paper, this sthdy simulated photovoltaic characteristics of single heterojunction solar cell with Cu2ZnSnS4 and Cu2ZnSnSe4 absorber layer numerically using the AFORS-HET program .n-CdS/ZnO double buffer layer is used for hetrostructure interfaces with the absorber layer. The cell performance is investigated against variation of different absorption layer properties such as thickness, carrier concentration. The mixed zinc and cadmium sulphide (Cd1-X Zn X S) is hired as buffer layers and reseach of the effect its thickness. CdS was selected a buffer because it improves the interface with absorbent CZTSSe and has a lofty sending in the blue wavelength. at thickness =1 μm and acceptor concentration (Na=7.9×1015 cm-3) ,a maximum efficiency (η=11.9%) is provided with an open-circuit voltage (Voc=688mv), short-circuit current (Jsc=24.6 mA.cm-2) and fill factor (FF =70.8 of the CZTS solar cell, and Voc=(597 mv), Jsc= (41.7mA.cm-2), FF = (81.2 %) and η= (20.2%) of the CZTSe solar cell.
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39

Zhu, L., Y. H. Qiang, Y. L. Zhao, and X. Q. Gu. "Double junction photoelectrochemical solar cells based on Cu2ZnSnS4/Cu2ZnSnSe4 thin film as composite photocathode." Applied Surface Science 292 (February 2014): 55–62. http://dx.doi.org/10.1016/j.apsusc.2013.11.063.

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40

Shibayama, Naoyuki, Yiwen Zhang, Tetsuo Satake, and Mutsumi Sugiyama. "Modelling of an equivalent circuit for Cu2ZnSnS4- and Cu2ZnSnSe4-based thin film solar cells." RSC Advances 7, no. 41 (2017): 25347–52. http://dx.doi.org/10.1039/c7ra02274c.

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41

Pandharkar, Subhash, Yogesh Hase, Shruti Shah, Vidya Doiphode, Ashish Waghmare, Ashvini Punde, Pratibha Shinde, et al. "Enhanced photoresponse of Cu2ZnSnS4 absorber thin films fabricated using multi-metallic stacked nanolayers." RSC Advances 13, no. 18 (2023): 12123–32. http://dx.doi.org/10.1039/d3ra00978e.

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42

ZHANG, H., Z. Q. LI, Y. R. CHEN, J. J. LI, Z. SUN, Z. YANG, and S. M. HUANG. "GROWTH OF Cu2ZnSn(S,Se)4 THIN FILMS BY A SIMPLE ECO-FRIENDLY SOLUTION ROUTE METHOD." Surface Review and Letters 19, no. 04 (July 26, 2012): 1250034. http://dx.doi.org/10.1142/s0218625x12500345.

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A simple and hydrazine-free solution-based approach for depositing Cu2ZnSnS4 (CZTS) and Cu2ZnSn(S,Se)4 (CZTSSe) absorber layers is reported. The process involves incorporating metal salts (Cu(CH3COO)2, Zn(CH3COO)2, SnCl2) and thiourea into a single pyridine-based solution, spin-coating a precursor film, and sulfurizing with sulfur powders or selenizing using Se pellets in an inert atmosphere, to form the desired CZTS or CZTSSe films. X-ray diffraction and Raman spectra studies show that kesterite CZTS and CZTSSe are formed after sulfurization and selenization, respectively. The selenized CZTSSe displays higher crystallinity than the sulfurized CZTS. Photovoltaic devices (glass/ Mo /CZTSSe/ CdS /i- ZnO /n- ZnO /A) employing the solution precursor selenized at 500°C have yielded power conversion efficiency of 1.44% under AM 1.5 illumination.
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43

Wang, K., O. Gunawan, T. Todorov, B. Shin, S. J. Chey, N. A. Bojarczuk, D. Mitzi, and S. Guha. "Thermally evaporated Cu2ZnSnS4 solar cells." Applied Physics Letters 97, no. 14 (October 4, 2010): 143508. http://dx.doi.org/10.1063/1.3499284.

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44

Dergacheva, M. B., K. A. Urazov, and A. E. Nurtazina. "Electrodeposition of thin Cu2ZnSnS4 films." Russian Journal of Electrochemistry 53, no. 3 (March 2017): 324–32. http://dx.doi.org/10.1134/s102319351703003x.

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45

Zou, Chao, Lijie Zhang, Deshang Lin, Yun Yang, Qiang Li, Xiangju Xu, Xi'an Chen, and Shaoming Huang. "Facile synthesis of Cu2ZnSnS4 nanocrystals." CrystEngComm 13, no. 10 (2011): 3310. http://dx.doi.org/10.1039/c0ce00631a.

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46

Katagiri, Hironori. "Cu2ZnSnS4 thin film solar cells." Thin Solid Films 480-481 (June 2005): 426–32. http://dx.doi.org/10.1016/j.tsf.2004.11.024.

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47

Jackson, Adam J., and Aron Walsh. "Abinitio thermodynamic model of Cu2ZnSnS4." J. Mater. Chem. A 2, no. 21 (2014): 7829–36. http://dx.doi.org/10.1039/c4ta00892h.

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The formation and decomposition of Cu2ZnSnS4 (CZTS), a quaternary semiconductor and promising photovoltaic absorber, is modelled as a function of temperature and pressure by ab initio methods.
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48

Grossberg, Maarja, Pille Salu, Jaan Raudoja, and Jüri Krustok. "Microphotoluminescence study of Cu2ZnSnS4 polycrystals." Journal of Photonics for Energy 3, no. 1 (June 3, 2013): 030599. http://dx.doi.org/10.1117/1.jpe.3.030599.

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49

Nakayama, Norio, and Kentaro Ito. "Sprayed films of stannite Cu2ZnSnS4." Applied Surface Science 92 (February 1996): 171–75. http://dx.doi.org/10.1016/0169-4332(95)00225-1.

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50

Chory, Christine, Folker Zutz, Florian Witt, Holger Borchert, and Jürgen Parisi. "Synthesis and characterization of Cu2ZnSnS4." physica status solidi (c) 7, no. 6 (March 31, 2010): 1486–88. http://dx.doi.org/10.1002/pssc.200983217.

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