Relevant bibliographies by topics / Cu2V2O7

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  2. Dissertations / Theses
  3. Conference papers

Academic literature on the topic 'Cu2V2O7'

Author: Grafiati
Published: 6 September 2023

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Journal articles on the topic "Cu2V2O7"

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Suganya, P., J. Princy, N. Mathivanan, and Krishnasamy K. "One-Pot Synthesis of rGO@Cu2V2O7 Nanocomposite as High Stabled Electrode for Symmetric Electrochemical Capacitors." ECS Journal of Solid State Science and Technology 11, no. 4 (April 1, 2022): 041005. http://dx.doi.org/10.1149/2162-8777/ac62f1.

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The rGO anchored copper vanadate nanostructures have been synthesized through facile hydrothermal synthesis for the high efficient energy storage applications. The prepared Cu2V2O7 and rGO@Cu2V2O7 nanostructures are fabricated as the electrode materials for three electrode and symmetric type electrochemical supercapacitors. Based on the electrochemical the electrodes shows the outstanding areal capacitance values of 340 and 545 F g−1 for Cu2V2O7 and rGO@Cu2V2O7 electrodes, respectively. Also the charge discharge curves of the rGO@Cu2V2O7 electrode revealed the higher specific capacitance values of 520 F g−1 at 1 A g−1 which is higher capacitance value than Cu2V2O7 electrode (318 F g−1 at 1 A g−1). Based on the cyclic performance the rGO@Cu2V2O7 electrode enumerate 98.6% withstand even the 1000th cycle. The symmetric electrode based device have been shows the higher capacitance values of 190 F g−1 at 1 A g−1 for rGO@Cu2V2O7 it is higher than pure Cu2V2O7 (148 F g−1 at 1 A g−1). With the synergitic reaction of rGO@Cu2V2O7 electrode shows the high energy 29.7 Wh kg−1 and power 4.8 kW kg−1 and the Cu2V2O7 and rGO@Cu2V2O7 electrodes. Also the rGO@Cu2V2O7 symmetric electrode device shows the higher cyclic efficiency about 97.5% at the 2000th cycle. These findings assess the rGO@Cu2V2O7 electrode is a promising candidate for the energy storage application.
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Shuang, Shuang, Leonardo Girardi, Gian Rizzi, Andrea Sartorel, Carla Marega, Zhengjun Zhang, and Gaetano Granozzi. "Visible Light Driven Photoanodes for Water Oxidation Based on Novel r-GO/β-Cu2V2O7/TiO2 Nanorods Composites." Nanomaterials 8, no. 7 (July 18, 2018): 544. http://dx.doi.org/10.3390/nano8070544.

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This paper describes the preparation and the photoelectrochemical performances of visible light driven photoanodes based on novel r-GO/β-Cu2V2O7/TiO2 nanorods/composites. β-Cu2V2O7 was deposited on both fluorine doped tin oxide (FTO) and TiO2 nanorods (NRs)/FTO by a fast and convenient Aerosol Assisted Spray Pyrolysis (AASP) procedure. Ethylenediamine (EN), ammonia and citric acid (CA) were tested as ligands for Cu2+ ions in the aerosol precursors solution. The best-performing deposits, in terms of photocurrent density, were obtained when NH3 was used as ligand. When β-Cu2V2O7 was deposited on the TiO2 NRs a good improvement in the durability of the photoanode was obtained, compared with pure β-Cu2V2O7 on FTO. A further remarkable improvement in durability and photocurrent density was obtained upon addition, by electrophoretic deposition, of reduced graphene oxide (r-GO) flakes on the β-Cu2V2O7/TiO2 composite material. The samples were characterized by X-ray Photoelectron Spectroscopy (XPS), Raman, High Resolution Transmission Electron Microscopy (HR-TEM), Scanning Electron Microscopy (SEM), Wide Angle X-ray Diffraction (WAXD) and UV-Vis spectroscopies. The photoelectrochemical (PEC) performances of β-Cu2V2O7 on FTO, β-Cu2V2O7/TiO2 and r-GO/β-Cu2V2O7/TiO2 were tested in visible light by linear voltammetry and Electrochemical Impedance Spectroscopy (EIS) measurements.
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Krivovichev, S. V., S. K. Filatov, P. N. Cherepansky, T. Armbruster, and O. Yu Pankratova. "CRYSTAL STRUCTURE OF -Cu2V2O7 AND ITS COMPARISON TO BLOSSITE ( -Cu2V2O7) AND ZIESITE ( -Cu2V2O7)." Canadian Mineralogist 43, no. 2 (April 1, 2005): 671–77. http://dx.doi.org/10.2113/gscanmin.43.2.671.

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4

Fontaine, Blandine, Youssef Benrkia, Jean-François Blach, Christian Mathieu, Pascal Roussel, Ahmad I. Ayesh, Adlane Sayede, and Sébastien Saitzek. "Photoelectrochemical properties of copper pyrovanadate (Cu2V2O7) thin films synthesized by pulsed laser deposition." RSC Advances 13, no. 18 (2023): 12161–74. http://dx.doi.org/10.1039/d3ra01509b.

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The photoelectrochemical properties of copper pyrovanadate (bulk α-Cu2V2O7 and thin films β-Cu2V2O7 elaborated by pulsed laser deposition) were investigated. For thin films, the best photocurrent efficiency was obtained under blue light (450 nm).
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5

Krasnenko, Tatiana, Nadezhda Medvedeva, and Vitalii Bamburov. "Atomic and Electronic Structure of Zinc and Copper Pyrovanadates with Negative Thermal Expansion." Advances in Science and Technology 63 (October 2010): 358–63. http://dx.doi.org/10.4028/www.scientific.net/ast.63.358.

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Zinc and copper pyrovanadates are promising materials for micro- and optoelectronics due to their negative coefficient of volume thermal expansion (NTE). Besides, solid solutions on the base of these compounds can be used to obtain grade materials with variable thermal coefficients. Thermal deformation of both Zn2V2O7 and Cu2V2O7 structures was studied. According to the structural data, NTE of these substances is provided by the zigzag shape of zinc (copper) chains alongside with stable distances between layers. The structural and electronic characteristics depending on temperature were studied for α-Zn2V2O7 and α-Cu2V2O7 by using the first principle method. Our results demonstrate that the lowest total energies corresponds to the structural parameters at 400° C and 200° C for α-Zn2V2O7 and α-Cu2V2O7, respectively. We predict that α- Zn2V2O7 is a semiconductor with the band gap of 1,5 эВ and the bottom of conduction band is determined by the vanadium 3d states with small addition of antibonding oxygen 2р-states. For α- Cu2V2O7, the lowest interband transitions correspond to energy of 1,6 eV and involve also the O2p and V 3d states.
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Benko, F. A., and F. P. Koffyberg. "Semiconductivity and optical interband transitions of CuV2O6 and Cu2V2O7." Canadian Journal of Physics 70, no. 2-3 (February 1, 1992): 99–103. http://dx.doi.org/10.1139/p92-011.

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CuV2O6 and Cu2V2O7 are low-mobility n-type semiconductors; at room temperature [Formula: see text]. From photoelectron-chemical measurements optical interband transitions are found at 2.02 and 3.15 eV for indium-doped CuV2O6, and at 1.87 and 2.88 eV for Cu2V2O7. In both materials the valence band edge is 6.9 eV below the vacuum level; a qualitative analysis of all data indicates that the upper valence band is made up mainly of oxygen-2p wave functions, as in V2O5.
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Ponomarenko, L. A., A. N. Vasil'ev, E. V. Antipov, and Yu A. Velikodny. "Magnetic properties of Cu2V2O7." Physica B: Condensed Matter 284-288 (July 2000): 1459–60. http://dx.doi.org/10.1016/s0921-4526(99)02702-7.

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8

EGUCHI, M., I. FURUSAWA, T. MIURA, and T. KISHI. "Lithium insertion characteristics of ß-Cu2V2O7." Solid State Ionics 68, no. 1-2 (February 1994): 159–64. http://dx.doi.org/10.1016/0167-2738(94)90253-4.

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Wang, Hui, Mengjie Yang, Mingju Chao, Juan Guo, Qilong Gao, Yajie Jiao, Xinbo Tang, and Erjun Liang. "Negative thermal expansion property of β-Cu2V2O7." Solid State Ionics 343 (December 2019): 115086. http://dx.doi.org/10.1016/j.ssi.2019.115086.

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Денисова, Л. Т., Н. В. Белоусова, В. М. Денисов, and Н. А. Галиахметова. "Высокотемпературная теплоемкость оксидов системы CuO-V-=SUB=-2-=/SUB=-O-=SUB=-5-=/SUB=-." Физика твердого тела 59, no. 6 (2017): 1243. http://dx.doi.org/10.21883/ftt.2017.06.44500.407.

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С помощью твердофазного синтеза из исходных компонентов CuO и V2O5 при ступенчатом обжиге получены CuV2O6 и Cu2V2O7. Методом дифференциальной сканирующей калориметрии измерена высокотемпературная теплоемкость оксидных соединений. По экспериментальным зависимостям CP=f(T) рассчитаны термодинамические свойства (изменение энтальпии, энтропии и приведенная энергия Гиббса). Установлено, что между удельной теплоемкостью и составом оксидов системы CuO-V2O5 имеется корреляция. DOI: 10.21883/FTT.2017.06.44500.407
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Dissertations / Theses on the topic "Cu2V2O7"

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Fan, Ko-Jung, and 范可蓉. "Effects of magnetic and nonmagnetic elements doping on the magnetic and dielectric properties of α-Cu2V2O7." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/grf7ej.

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碩士
國立中山大學
物理學系研究所
105
Vanadates oxide materials exhibit a variety of functional properties whose origin is closely related to the structural and electronic peculiarities of the compounds. Recently, in the vanadatesTM2V2O7 (TM = Cu, Co and Ni), a magnetically driven ferroelectric phenomena has been reported. The multiferroic ordering of these system closely connected with the crystal structure and their magnetic properties. The crystallographic structure for Co2V2O7 exhibits a dichromate structure with crystallizes in a monoclinic symmetry, whereas Cu2V2O7 crystallizes in two different polymorphs (I) α-structure, that is orthorhombic and noncentrosymmetric, and the (II) -phase that is monoclinic and centrosymmetric. In Co2V2O7, two Co2+O6 cations octahedral connected via edge sharing and forms the zigzag chains along c-axis and chains are separated by nonmagnetic (V2O7)4- groups that lead to frustrated one dimensional antiferromagnetic ordering. On the other hand, in α-Cu2V2O7, Cu2+O5 polyhedral form the cross-linking chain network which are separated by (V2O7)4- anion units makes system a weak ferromagnet ground state induced by Dzyaloshinskii-Moriya (DM) interaction. In these present study, we are doping the small concentration (5%) of magnetic (Co) and nonmagnetic (Zn and Ga) elements to understand the effect of doping on the structural magnetic and dielectric properties of α-Cu2V2O7. Our magnetization data clearly indicates that the Co doping significantly modifies the ground state magnetic property by invoking the frustration. However nonmagnetic elements does not show much influence on the strength of DM interaction of α-Cu2V2O7. We believe local structural modulation by chemical doping with different doping element might alters the magnetic ground state of α-Cu2V2O7.
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Mehanathan, Nishanth. "Oxide Semiconductors for Silicon Tandem Solar Cells." Thesis, 2017. https://etd.iisc.ac.in/handle/2005/4775.

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In tandem solar cells two or more solar cells share the solar spectrum. The structure consists of two sub-cells on top of each other, with the top cell absorbing the blue photons and the bottom cells absorbing the red photons. Tandem cells on silicon are interesting because they provide a pathway for more efficient commercial solar cells. Two problems of current tandem cells on silicon are: low-loss tunnel junction and efficient absorbing semiconductor for the top subcell. The first part of the thesis deals with the design of tunnel diodes. Tunnel diodes are used at the interface of the two sub-cells to enable passage or transport of carriers from one cell to another by the quantum mechanical phenomenon of tunneling. Low-loss tunnel junctions offer a low resistance and optically transparent connection between two sub cells. Here we report “all-oxide” heterojunction diodes which have the potential to behave like tunnel junction diodes. For this study we chose nitrogen doped as the p+-type material and ITO as the n+-type material, both deposited using magnetron sputtering. The primary materials challenge is deposition of degenerately doped oxide thin-films. Through careful optimization of deposition conditions highly-doped Cu2O and ITO films with a peak doping concentration of 2.6 x , and 2.0 x were obtained. Next, tunnel diodes with p+- /n+-ITO structure in various configurations were fabricated. Negative differential resistance, the characteristics feature in the I-V characteristics of a tunnel diode, was not observed in any of the devices. This could occur due to several reasons: a) the I-V characteristics of the tunnel devices may be reflecting the series resistance due to the bulk resistance of the constituent layers, b) the thermal generation current due to the bulk and interface defects may be much higher than the tunneling current, or c) insufficient doping in the p+ layer. However, we did measure very low contact resistance in the range of (4-35) mΩ across the tunnel diode, which was the ultimate goal of the project. The second part of the thesis deals with development of oxide based absorbers for silicon tandem cells. Low bandgap oxide (and sulfide) semiconductors can absorb solar radiation, and be deposited using low cost methods like PLD, making them interesting as solar absorbers. Here we report as an oxide absorber which has a low bandgap of 2.1 eV. Unfortunately solar cells made with show a very low electrical output: open circuit voltage is only 10 mV. However, the devices do show a photocurrent density of 3.87 at 1 V bias, making them interesting as a photosensor. The device performance seems to be limited by the presence of pinholes in the films. Finally we show that the can be sulphurized into another potential solar absorbing semiconductor.
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Conference papers on the topic "Cu2V2O7"

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Chattopadhyay, Bidisa, Md A. Ahmed, S. Bandyopadhyay, and P. Mandal. "Effect of Zn doping on the physical properties of multiferroic Cu2V2O7." In Proceedings of the International Conference on Nanotechnology for Better Living. Singapore: Research Publishing Services, 2016. http://dx.doi.org/10.3850/978-981-09-7519-7nbl16-rps-134.

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