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Journal articles on the topic 'Cu2Te'

Author: Grafiati

Published: 6 September 2023

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1

Bikkulova, N. N., Yu M. Stepanov, A. D. Davletshina, and L. V. Bikkulova. "Simulation of the lattice dynamics of Cu2Se and Cu2Te superionic conductors." Letters on Materials 3, no. 2 (2013): 87–90. http://dx.doi.org/10.22226/2410-3535-2013-2-87-90.

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2

Jung, Yong-Jae, Hyun-Sik Kim, Jong Ho Won, Minkyung Kim, Minji Kang, Eun Young Jang, Nguyen Vu Binh, et al. "Thermoelectric Properties of Cu2Te Nanoparticle Incorporated N-Type Bi2Te2.7Se0.3." Materials 15, no. 6 (March 19, 2022): 2284. http://dx.doi.org/10.3390/ma15062284.

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To develop highly efficient thermoelectric materials, the generation of homogeneous heterostructures in a matrix is considered to mitigate the interdependency of the thermoelectric compartments. In this study, Cu2Te nanoparticles were introduced onto Bi2Te2.7Se0.3 n-type materials and their thermoelectric properties were investigated in terms of the amount of Cu2Te nanoparticles. A homogeneous dispersion of Cu2Te nanoparticles was obtained up to 0.4 wt.% Cu2Te, whereas the Cu2Te nanoparticles tended to agglomerate with each other at greater than 0.6 wt.% Cu2Te. The highest power factor was obtained under the optimal dispersion conditions (0.4 wt.% Cu2Te incorporation), which was considered to originate from the potential barrier on the interface between Cu2Te and Bi2Te2.7Se0.3. The Cu2Te incorporation also reduced the lattice thermal conductivity, and the dimensionless figure of merit ZT was increased to 0.75 at 374 K for 0.4 wt.% Cu2Te incorporation compared with that of 0.65 at 425 K for pristine Bi2Te2.7Se0.3. This approach could also be an effective means of controlling the temperature dependence of ZT, which could be modulated against target applications.

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3

Kowalchuk, Collin M., Harald Rösner, Dieter Fenske, Yining Huang, and John F. Corrigan. "Copper tellurolate clusters in trimethylsilylated MCM-41 Preparation and condensation." Canadian Journal of Chemistry 84, no. 2 (February 1, 2006): 196–204. http://dx.doi.org/10.1139/v05-221.

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The copper tellurolate cluster [(Cu6(TePh)6(PEtPh2)5] (1) has been loaded into the pores of a trimethylsilylated MCM-41 (TMSMCM-41) framework. Solutions of 1 in tetrahydrofuran lead to good impregnation weight % (~10 wt%, 1). The resulting material was analysed by powder X-ray diffraction (PXRD), nitrogen sorption isotherms, thermogravimetric analysis (TGA), energy dispersive X-ray (EDX) analysis, 31P CP MAS NMR spectroscopy, and transmission electron microscopy (TEM). It was observed that the loading process proceeds with the intact cluster 1 being present within the hexagonal architecture. The intact nature of 1 makes it an ideal candidate for condensation by photochemical or thermal means. Both of these condensation treatments increase the Cu:Te ratio of 1 to approach that observed in binary semiconductor Cu2Te. The condensation process was analysed by GCMS spectrometry and characterization of the condensed, isolated composites was performed by TGA, EDX analysis, 31P CP MAS NMR spectroscopy, nitrogen adsorption, and TEM measurements. Thermal condensation results in the formation of Cu2Te particles, whereas photochemical condensation yields larger copper-tellurolate nanoclusters.Key words: copper, tellurium, cluster, MCM-41, trimethylsilylated, photolysis, thermolysis, Cu2Te, composite, mesoporous material.

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4

Janickis, Vitalijus, and Skirma Žalenkienė. "Formation and study of mixed copper sulfide-copper telluride layers on the surface of polyamide 6." Open Chemistry 8, no. 4 (August 1, 2010): 709–24. http://dx.doi.org/10.2478/s11532-010-0060-9.

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AbstractThe layers of mixed copper chalcogenides, CuxS-CuyTe, were formed on the surface of polyamide using solutions of potassium and sodium telluropentathionates, K2TeS4O6 and Na2TeS4O6, respectively, and of telluropentathionic acid, H2TeS4O6, as precursors of chalcogens. The concentration of sorbed chalcogens increased with the increasing time of the treatment, concentration and temperature of precursor solution. CuxS-CuyTe layers are formed on the surface of polyamide after the treatment of chalcogenized polymer with Cu(II/I) salt solution. The concentration of copper in the layer increases with the increase of chalcogenization duration, concentration and the temperature of chalcogenization solution. In the surface of CuxS-CuyTe layers various copper, sulfur, tellurium and oxygen compounds (Cu2S, CuS, S8, CuxS, CuyTe, Cu(OH)2 and TeO2) were present. Chalcogenides were the major components in the layer. Chalcogenide phases — digenite, Cu1.8S, djurleite, Cu1.9375S, anilite, Cu7S4, geerite, CuS2, chalcocite, Cu2S, tetragonal Cu3.18Te2, Cu2.72Te, hexagonal Cu2Te, Cu4Te3, Cu1.80Te, Cu1.85Te2, and orthorhombic vulcanite, CuTe were identified in the layers by X-ray diffraction. Electrical sheet resistance of CuxS-CuyTe layers vary from ∼ 1.0 kW cm−2 to 4×103 kΩ cm−2. It is concluded that the formation of chalcogenide layers proceeds in the form of islands which grow into larger agglomerates. Use of the gathered data enables design and formation of the CuxS-CuyTe layers with desired conductivities.

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5

Ballikaya, Sedat, Hang Chi, James R. Salvador, and Ctirad Uher. "Thermoelectric properties of Ag-doped Cu2Se and Cu2Te." Journal of Materials Chemistry A 1, no. 40 (2013): 12478. http://dx.doi.org/10.1039/c3ta12508d.

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6

Lee, Dong Jin, G. Mohan Kumar, V. Ganesh, Hee Chang Jeon, Deuk Young Kim, Tae Won Kang, and P. Ilanchezhiyan. "Novel Nanoarchitectured Cu2Te as a Photocathodes for Photoelectrochemical Water Splitting Applications." Nanomaterials 12, no. 18 (September 14, 2022): 3192. http://dx.doi.org/10.3390/nano12183192.

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Designing photocathodes with nanostructures has been considered a promising way to improve the photoelectrochemical (PEC) water splitting activity. Cu2Te is one of the promising semiconducting materials for photoelectrochemical water splitting, the performance of Cu2Te photocathodes remains poor. In this work, we report the preparation of Cu2Te nanorods (NRs) and vertical nanosheets (NSs) assembled film on Cu foil through a vapor phase epitaxy (VPE) technique. The obtained nano architectures as photocathodes toward photoelectrochemical (PEC) performance was tested afterwards for the first time. Optimized Cu2Te NRs and NSs photocathodes showed significant photocurrent density up to 0.53 mA cm−2 and excellent stability under illumination. Electrochemical impedance spectroscopy and Mott–Schottky analysis were used to analyze in more detail the performance of Cu2Te NRs and NSs photocathodes. From these analyses, we propose that Cu2Te NRs and NSs photocathodes are potential candidate materials for use in solar water splitting.

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7

Gao, Jie, Xiaoyu Huang, Chong Qiao, and Yu Jia. "The changeable coordination of structural and bonding characteristics in amorphous Cu₂Te from ab initio molecular dynamics simulations." Journal of Applied Physics 132, no. 24 (December 28, 2022): 244302. http://dx.doi.org/10.1063/5.0128259.

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Crystalline Cu2Te has recently attracted a great deal of attention owing to its good performance in thermoelectric materials. Yet, knowledge of the amorphous phase is still insufficient, which may restrict its practical application. Here, we have studied the structural and bonding characteristics of amorphous Cu2Te by ab initio molecular dynamics simulations. We show that, compared with its crystal phase, the Cu atoms bond more Cu than Te atoms in amorphous Cu2Te and Te atoms predominantly bond with Cu atoms. In detail, the amorphous Cu2Te is made up of Cu–Te network structures and Cu–Cu high-coordinated configurations, presenting the hexagonal and icosahedral structures, respectively. This result is probably ascribed to both the stronger bonding ability of Cu–Cu bonds and the multivalence of Te atoms. Our findings enrich the knowledge of the local structure and the bonding nature of amorphous Cu2Te, which can guide the design of good performance Cu2Te based thermoelectric devices further.

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8

He, Wenya, Hanzhi Zhang, Ye Zhang, Mengdi Liu, Xin Zhang, and Fengchun Yang. "Electrodeposition and Characterization of CuTe and Cu2Te Thin Films." Journal of Nanomaterials 2015 (2015): 1–5. http://dx.doi.org/10.1155/2015/240525.

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An electrodeposition method for fabrication of CuTe and Cu2Te thin films is presented. The films’ growth is based on the epitaxial electrodeposition of Cu and Te alternately with different electrochemical parameter, respectively. The deposited thin films were characterized by X-ray diffraction (XRD), field emission scanning electronic microscopy (FE-SEM) with an energy dispersive X-ray (EDX) analyzer, and FTIR studies. The results suggest that the epitaxial electrodeposition is an ideal method for deposition of compound semiconductor films for photoelectric applications.

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9

Zhang, Wenyu, Zhifang Zhou, Yueyang Yang, Yunpeng Zheng, Yushuai Xu, Mingchu Zou, Ce-Wen Nan, and Yuan-Hua Lin. "Enhancing Thermoelectric Properties of (Cu2Te)1−x-(BiCuTeO)x Composites by Optimizing Carrier Concentration." Materials 15, no. 6 (March 11, 2022): 2096. http://dx.doi.org/10.3390/ma15062096.

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Because of the high carrier concentration, copper telluride (Cu2Te) has a relatively low Seebeck coefficient and high thermal conductivity, which are not good for its thermoelectric performance. To simultaneously optimize carrier concentration, lower thermal conductivity and improve the stability, BiCuTeO, an oxygen containing compound with lower carrier concentration, is in situ formed in Cu2Te by a method of combining self-propagating high-temperature synthesis (SHS) with spark plasma sintering (SPS). With the incorporation of BiCuTeO, the carrier concentration decreased from 8.1 × 1020 to 3.8 × 1020 cm−3, bringing the increase of power factor from ~1.91 to ~2.97 μW cm−1 K−2 at normal temperature. At the same time, thermal conductivity reduced from 2.61 to 1.48 W m−1 K−1 at 623 K. Consequently, (Cu2Te)0.95-(BiCuTeO)0.05 composite sample reached a relatively high ZT value of 0.13 at 723 K, which is 41% higher than that of Cu2Te.

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10

Sklyarchuk, V. M., and Yu O. Plevachuk. "Electronic properties of liquid Tl2Te, Tl2Se, Ag2Te, Cu2Te, and Cu2Se alloys." Semiconductors 36, no. 10 (October 2002): 1123–27. http://dx.doi.org/10.1134/1.1513855.

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11

Ahmad, H., N. H. Abdul Kahar, N. F. Norisham, S. A. Reduan, and L. Bayang. "L-band femtosecond fiber laser with Cu₂Te-PVA thin film." Laser Physics Letters 19, no. 1 (November 26, 2021): 015101. http://dx.doi.org/10.1088/1612-202x/ac3a0c.

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Abstract For the first time, this research proposed a copper telluride (Cu2Te)-polyvinyl alcohol thin film as a saturable absorber (SA) in an erbium-doped fiber laser (EDFL) operating in the long-wavelength band (L-band). The nonlinear optical absorption measurement of Cu2Te thin film revealed a saturation intensity of 3.26 kW cm−2 and a modulation depth of 2.7%. Furthermore, the mode-locked pulse was successfully generated by integrating a Cu2Te thin film into the L-band cavity at a threshold pump power of 135.61 mW with a center wavelength and pulse duration of 1565.48 nm and 770 fs, respectively. When observing the output mode-locked pulse, the pump power for the EDFL ranged from 135.61 mW to 201.28 mW, with the fundamental mode having a repetition rate 10.28 MHz. Furthermore, the magnitude of the signal-to-noise ratio was approximately 61.3 dB, indicating that the laser was stable with no significant fluctuations during the stability test. Overall, the findings showed that Cu2Te thin film has an excellent output and a promising candidate for an SA, implying that it could have a lot of potentials in pulsed laser application.

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12

Al-Dhafiri, A. M. "Photovoltaic properties of CdTe-Cu2Te." Renewable Energy 14, no. 1-4 (May 1998): 101–6. http://dx.doi.org/10.1016/s0960-1481(98)00054-8.

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13

Kashida, S., W. Shimosaka, M. Mori, and D. Yoshimura. "Valence band photoemission study of the copper chalcogenide compounds, Cu2S, Cu2Se and Cu2Te." Journal of Physics and Chemistry of Solids 64, no. 12 (December 2003): 2357–63. http://dx.doi.org/10.1016/s0022-3697(03)00272-5.

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14

Zhang, Yanan, Zhi Zhang, Weifeng Liu, Yifan Zheng, Yonghui Wu, Jun Su, Nishuang Liu, and Yihua Gao. "In situ insight into thermally-induced reversible transitions of the crystal structure and photoluminescence properties in a Cu₂Te nanoplate." Journal of Materials Chemistry A 9, no. 46 (2021): 26095–104. http://dx.doi.org/10.1039/d1ta07277c.

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15

Tong, Yongfeng, Meryem Bouaziz, Wei Zhang, Baydaa Obeid, Antoine Loncle, Hamid Oughaddou, Hanna Enriquez, et al. "Evidence of new 2D material: Cu2Te." 2D Materials 7, no. 3 (May 15, 2020): 035010. http://dx.doi.org/10.1088/2053-1583/ab8918.

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16

Kadykalo, E. M., L. P. Marushko, I. A. Ivashchenko, O. F. Zmiy, and I. D. Olekseyuk. "Quasi-ternary System Cu2Te-CdTe-In2Te3." Journal of Phase Equilibria and Diffusion 34, no. 3 (March 7, 2013): 221–28. http://dx.doi.org/10.1007/s11669-013-0228-z.

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17

Ohno, Satoru, Shuta Tahara, and Tatsuya Okada. "Electrical Properties of Molten CuCl–Cu2Te Mixtures." Journal of the Physical Society of Japan 79, no. 11 (November 15, 2010): 114702. http://dx.doi.org/10.1143/jpsj.79.114702.

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18

Nishanthini, R., M. Muthu Menaka, P. Pandi, P. Bahavan Palani, and K. Neyvasagam. "Investigation on Structural and Optical Properties of Copper Telluride Thin Films with Different Annealing Temperature." International Journal of Nanoscience 17, no. 03 (May 21, 2018): 1760046. http://dx.doi.org/10.1142/s0219581x17600468.

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The copper telluride (Cu2Te) thin film of thickness 240[Formula: see text]nm was coated on a microscopic glass substrate by thermal evaporation technique. The prepared films were annealed at 150[Formula: see text]C and 250[Formula: see text]C for 1[Formula: see text]h. The annealing effect on Cu2Te thin films was examined with different characterization methods like X-ray Diffraction Spectroscopy (XRD), Scanning Electron Microscopy (SEM), Ultra Violet–Visible Spectroscopy (UV–VIS) and Photoluminescence (PL) Spectroscopy. The peak intensities of XRD spectra were increased while increasing annealing temperature from 150[Formula: see text]C to 250[Formula: see text]C. The improved crystallinity of the thin films was revealed. However, the prepared films are exposed complex structure with better compatibility. Moreover, the shift in band gap energy towards higher energies (blue shift) with increasing annealing temperature is observed from the optical studies.

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19

Klimashin, Anton. "High-Temperature Corrosion of Copper Induced by TeO2." Corrosion 76, no. 2 (January 5, 2020): 210–16. http://dx.doi.org/10.5006/3295.

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It was found that copper is susceptible to the accelerated high-temperature corrosion induced by TeO2 at 650°C in air, which occurs at a constant rate. The calculated corrosion rate constant is 4.5 × 10−4 kg·m−2·s−1 and does not depend on the specific mass of tellurium oxide. Based on the results of the analysis of the microstructure (scanning electron microscopy/energy dispersive x-ray spectroscopy) and the phase composition (x-ray diffraction) of two formed corrosion layers, the phase distribution in the corrosion product has been ascertained. It was shown that during the corrosion process at 650°С, the inner corrosion layer containing Cu2O and Cu2Te and the outer corrosion layer mainly containing CuTe2O5 and Cu2O were formed. The inner layer provides a high copper ion conductivity due to Cu2Te, while the outer layer possesses a high oxygen ion conductivity due to the oxide melt. The mechanism of the overall corrosion process has been proposed.

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20

Feng, Jingqi, Huiying Gao, Tian Li, Xin Tan, Peng Xu, Menglei Li, Lin He, and Donglin Ma. "Lattice-Matched Metal–Semiconductor Heterointerface in Monolayer Cu2Te." ACS Nano 15, no. 2 (January 26, 2021): 3415–22. http://dx.doi.org/10.1021/acsnano.0c10442.

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21

Li, Min, Yong Luo, Gemei Cai, Xie Li, Xiaoyan Li, Zhongkang Han, Xinyi Lin, Debalaya Sarker, and Jiaolin Cui. "Realizing high thermoelectric performance in Cu2Te alloyed Cu1.15In2.29Te4." Journal of Materials Chemistry A 7, no. 5 (2019): 2360–67. http://dx.doi.org/10.1039/c8ta10741f.

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Upon alloying with Cu₂Te, the extra Te, which resides at the interstitial site of Cu_1.15In_2.29Te₄ and creates resonant, impurity states and additional rattling modes, yields extensive lattice disorder, thus improving the thermoelectric performance significantly.

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22

Korzun, B. V., A. A. Fadzeyeva, K. Bente, and Th Doering. "Phase relations in the Cu2Te–Al2Te3 semiconductor system." Journal of Materials Science: Materials in Electronics 19, no. 3 (July 24, 2007): 255–60. http://dx.doi.org/10.1007/s10854-007-9271-z.

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23

Wang, Hailong, Pengfei Zuo, Aming Wang, Shengyi Zhang, Changjie Mao, Jiming Song, Helin Niu, Baokang Jin, and Yupeng Tian. "Facile synthesis and electrochemical property of Cu2Te nanorods." Journal of Alloys and Compounds 581 (December 2013): 816–20. http://dx.doi.org/10.1016/j.jallcom.2013.07.140.

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24

Sridhar, K., and K. Chattopadhyay. "Synthesis by mechanical alloying and thermoelectric properties of Cu2Te." Journal of Alloys and Compounds 264, no. 1-2 (January 1998): 293–98. http://dx.doi.org/10.1016/s0925-8388(97)00266-1.

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25

Xie, Huanhuan, and Qiang Sun. "Cu2Te–Ag2Te lateral topological insulator heterojunction: stability and properties." Nanotechnology 29, no. 50 (October 23, 2018): 505711. http://dx.doi.org/10.1088/1361-6528/aae4f8.

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26

Brunetti, B., V. Piacente, P. Vassallo, and A. R. Villani. "A torsion–effusion study on the sublimation of Cu2Te." Materials Chemistry and Physics 70, no. 3 (June 2001): 263–67. http://dx.doi.org/10.1016/s0254-0584(00)00408-9.

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27

Zhao, Degang, Lin Wang, Di Wu, and Lin Bo. "Thermoelectric Properties of Cu2SnSe3-Based Composites Containing Melt-Spun Cu–Te." Metals 9, no. 9 (September 3, 2019): 971. http://dx.doi.org/10.3390/met9090971.

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In this study, the Cu–Te alloy ribbons containing nanocrystalline structures were prepared by melt spinning (MS), and were composed of Cu2−xTe, Cu2Te, Cu3−xTe, and CuTe phases. Crystal grains on both sides of the ribbons were uniformly distributed and the grain size of the contact surface was about 400 nm. The Cu–Te powder was incorporated into the Cu2SnSe3 powder by the ball milling process and the Cu–Te/Cu2SnSe3 thermoelectric composite was prepared by spark plasma sintering (SPS). With the amount of Cu–Te powder increasing, the carrier concentration of the Cu–Te/Cu2SnSe3 composite increased, while the carrier mobility and electrical conductivity initially increased and then decreased. Compared to the Seebeck coefficient of the Cu2SnSe3 matrix, the Seebeck coefficient of the Cu–Te/Cu2SnSe3 samples increased slightly. Moreover, the Cu–Te/Cu2SnSe3 composites had lower thermal conductivity and lattice thermal conductivity over the whole temperature range. The lattice thermal conductivity of the 0.8 vol.% Cu–Te/Cu2SnSe3 composite achieved the lowest value of 0.22 W/m·K, which was 78% lower than that of the Cu2SnSe3 matrix. The maximum figure of merit of the 0.8 vol.% Cu–Te/Cu2SnSe3 composite was 0.45 at 700 K.

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28

Дашдамирова, Г. Е., Э. Б. Аскеров, and Д. И. Исмаилов. "Электронографическое исследование фазообразования в нанотолщинных слоях систем Cu-=SUB=-2-=/SUB=-Te-In-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-, Cu-In-Te и ближний атомный порядок в аморфных пленках CuIn-=SUB=-5-=/SUB=-Te-=SUB=-8-=/SUB=-." Физика и техника полупроводников 56, no. 5 (2022): 447. http://dx.doi.org/10.21883/ftp.2022.05.52344.9794.

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Показано, что при одновременном и последовательном осаждении пленок системы Cu2Te-In2Te3, а также используемых в качестве исходных материалов меди, индия и теллура высшей очистки ~99.999%, взятых в соотношениях Cu : In : Te = 1 : 5 : 8, независимо от порядка напыления выделяются тройные соединения составов CuInTe2, CuIn3Te5 и CuIn5Te8 в кристаллическом состоянии. При вакуумной конденсации пленок на монокристаллические подложки NaCl, KCl и аморфный целлулоид, охлажденные жидким азотом до 203 K, образующиеся пленки, полученные как совместным испарением двойных соединений системы Cu2Te-In2Te3, так и синтезом тонких слоев, примененных Cu, In, Te, являются аморфными. Впервые в наноразмерных аморфных пленках состава CuIn5Te8, кристаллизующихся в тетрагональной сингонии с периодами элементарных ячеек a=6.162 Angstrem, c=12.291 Angstrem, полученных как в обычных условиях, так и в условиях воздействия внешнего электрического поля напряженностью 500 В · см-1, установлена структура ближнего атомного порядка --- число ближайших соседей, координационные числа и радиусы координационных сфер. Выявлено, что в аморфных пленках CuIn5Te8, полученных в условиях воздействия внешнего электрического поля, в которых матрицы состоят из тетраэдрических и октаэдрических окружений атомов, в отличие от пленок, формирующихся без воздействия поля, число ближайших соседей, оставаясь неизменным, радиусы координационных сфер и межатомные расстояния несколько укорачиваются. Ключевые слова: фазообразование, электронограмма, функция радиального распределения атомов (ФРРА), когерентное рассеяние электронов.

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29

Márquez Marín, J., G. Torres Delgado, M. A. Aguilar Frutis, R. Castanedo Pérez, and O. Zelaya Ángel. "Au/Cu2Te/CdTe/CdS/TCO/Glass Solar Cells withCdIn2O4Obtained by Sol-Gel as TCO." International Journal of Photoenergy 2014 (2014): 1–6. http://dx.doi.org/10.1155/2014/920785.

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An Au/Cu2Te/CdTe/CdS/TCO/glass heterostructure based superstrate solar cells with 2.5 mm2of area, where the CdTe layer was prepared by means of closed spaced sublimation (CSS) and the CdS by chemical bath, reached an efficiencyηvalue of 12.1%. As transparent conductive oxide (TCO), a thin film of cadmium-indium oxide (CdIn2O4:CIO), obtained by sol-gel technique, was used. A systematic optimization of the thermal activation of the CdTe/CdS/CIO central part of the device with a CdCl2vapor ambient made the conversion efficiency of the Au/Cu2Te/CdTe/CdS/CIO/glass heterostructure reaches 9.94% for the CdTe layer with thickness of 1.8 μm. This efficiency was reached only through an open circuit voltageVOCoptimization. A maximumηof 12.1% was reached with the established procedure of optimization and when the CdTe layer thickness was increased to 3.1 ± 0.05 μm. The substitution of CIO by commercial ITO provoked in the cell a decrease ofηfrom 12.1% to 7.2%, both devices prepared under the same conditions. Starting from these results, we can say that CIO was a better TCO than commercial ITO in our solar cell, with the advantage that CIO was obtained by sol-gel, which is a simple and economical technique.

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30

Ghasemi-Koch, Majid, Masoud Salavati-Niasari, and Davood Ghanbari. "A Surfactant-Free Sonochemical Method for Synthesis of Cu2Te Nanoparticles." Synthesis and Reactivity in Inorganic, Metal-Organic, and Nano-Metal Chemistry 45, no. 6 (August 18, 2014): 858–64. http://dx.doi.org/10.1080/15533174.2013.843560.

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31

Bu, Z., W. Li, J. Li, X. Zhang, J. Mao, Y. Chen, and Y. Pei. "Dilute Cu2Te-alloying enables extraordinary performance of r-GeTe thermoelectrics." Materials Today Physics 9 (June 2019): 100096. http://dx.doi.org/10.1016/j.mtphys.2019.100096.

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32

Mahammad Hussain, O., B. Srinivasulu Naidu, and P. Jayarama Reddy. "Photovoltaic properties of n-CdS/p-Cu2Te thin film heterojunctions." Thin Solid Films 193-194 (December 1990): 777–81. http://dx.doi.org/10.1016/0040-6090(90)90230-b.

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33

Mukherjee, Shriparna, Rajasekar Parasuraman, Arun M. Umarji, Gerda Rogl, Peter Rogl, and Kamanio Chattopadhyay. "Effect of Fe alloying on the thermoelectric performance of Cu2Te." Journal of Alloys and Compounds 817 (March 2020): 152729. http://dx.doi.org/10.1016/j.jallcom.2019.152729.

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34

Choi, Jin-Ho, Wenguang Zhu, Kai-Ming Ho, Deliang Wang, and Zhenyu Zhang. "Energetics and Atomic Structures of Cu2Te Overlayers on CdTe(111)." Journal of Physical Chemistry C 119, no. 9 (February 25, 2015): 4843–47. http://dx.doi.org/10.1021/jp511776e.

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35

Mukherjee, Shriparna, Olu Emmanuel Femi, Raju Chetty, Kamanio Chattopadhyay, Satyam Suwas, and Ramesh Chandra Mallik. "Microstructure and thermoelectric properties of Cu2Te-Sb2Te3 pseudo-binary system." Applied Surface Science 449 (August 2018): 805–14. http://dx.doi.org/10.1016/j.apsusc.2017.11.198.

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36

Harif, Muhammad Najib, Camellia Doroody, Allina Nadzri, Hasrul Nisham Rosly, Nur Irwany Ahmad, Mustapha Isah, and Nowshad Amin. "Effect of Cu2Te Back Surface Interfacial Layer on Cadmium Telluride Thin Film Solar Cell Performance from Numerical Analysis." Crystals 13, no. 5 (May 20, 2023): 848. http://dx.doi.org/10.3390/cryst13050848.

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Even though substantial advances made in the device configuration of the frontal layers of the superstrate cadmium telluride (CdTe) solar cell device have contributed to conversion efficiency, unresolved challenges remain in regard to controlling the self-compensation and minority carrier recombination at the back contact that limits the efficiency. In this study, a SCAPS-1D simulator was used to analyze the loss mechanism and performance limitations due to the band-bending effect upon copper chloride treatment and subsequent Cu2Te layer formation as the back contact buffer layer. The optimal energy bandgap range for the proposed back surface layer of Cu2Te is derived to be in the range of 1.1 eV to 1.3 eV for the maximum conversion efficiency, i.e., around 21.3%. Moreover, the impacts of absorber layer’s carrier concentration with respect to CdTe film thickness, bandgap, and operational temperature are analyzed. The optimized design reveals that the acceptor concentration contributes significantly to the performance of the CdTe devices, including spectral response. Consequently, the optimized thickness of the CdTe absorber layer with a Cu-based back contact is found to be 2.5 µm. Moreover, the effect of temperature ranging from 30 °C to 100 °C as the operating condition of the CdTe thin-film solar cells is addressed, which demonstrates an increasing recombination tread once the device temperature exceeds 60 °C, thus affecting the stability of the solar cells.

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37

Šukytė, Judita, and Remigijus Ivanauskas. "Formation and properties of copper chalcogenides thin films on polymers formed using sodium telluropentathionate." Open Chemistry 11, no. 7 (July 1, 2013): 1163–71. http://dx.doi.org/10.2478/s11532-013-0254-z.

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AbstractThe preparative conditions were optimized to get chalcogens layers on the polymer — polyamide PA surface by sorption at room temperature using sodium telluropentathionate, Na2TeS4O6. Further interaction of chalcogenized dielectric with copper’s (I/II) salt solution leads to the formation of mixed CuxSy-CuxTey layers. Optical, electrical and surface characteristics of the layers are highly controlled by the deposition parameters. The stoichiometry of these layers was established by UV-Visible and AA spectrometry. Optical absorption (transmittance) experiments show the samples are of high optical quality. The band gaps of thin films were obtained from their optical absorption spectra, which were found in the range of 1.44–2.97 eV. XRD was used in combination with AFM to characterize chalcogenides layers’ structural features. XRD analysis confirmed the formation of mixed copper chalcogenides’ layers in the surface of PA with binary phases such as Cu2Te, Cu3.18Te2, copper telluride, Cu2.72Te2, vulcanite, CuTe, anilite, Cu7S4 and copper sulfide, Cu1.8S. The crystallite sizes of thin films calculated by the Scherer formula were found to be in the range of 3.07–13.53 nm for CuxSy crystallites and 4.06–20.79 nm for CuxTey crystallites. At room temperature an electrical resistance of CuxSy-CuxTey layers varies from 3.0×103 kΩ□−1 to 1.0 kΩ□−1.

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38

Kavirajan, S., S. Harish, J. Archana, M. Shimomura, and M. Navaneethan. "Phase transition induced thermoelectric properties of Cu2Te by melt growth process." Materials Letters 298 (September 2021): 129957. http://dx.doi.org/10.1016/j.matlet.2021.129957.

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39

Park, Yongseob, Suho Lee, Junsin Yi, Byung-Duck Choi, Doyoung Kim, and Jaehyeong Lee. "Sputtered CdTe thin film solar cells with Cu2Te/Au back contact." Thin Solid Films 546 (November 2013): 337–41. http://dx.doi.org/10.1016/j.tsf.2013.02.108.

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40

Zhang, Yinggan, Baisheng Sa, Jian Zhou, and Zhimei Sun. "First principles investigation of the structure and electronic properties of Cu2Te." Computational Materials Science 81 (January 2014): 163–69. http://dx.doi.org/10.1016/j.commatsci.2013.08.009.

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41

SRIDHAR, K., and K. CHATTOPADHYAY. "ChemInform Abstract: Synthesis by Mechanical Alloying and Thermoelectric Properties of Cu2Te." ChemInform 29, no. 17 (June 23, 2010): no. http://dx.doi.org/10.1002/chin.199817023.

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42

Алыев, Ю. И., Ю. Г. Асадов, Р. Д. Алыева, and С. Г. Джабаров. "Полиморфные превращения и термическое расширение кристаллов AgCuSe-=SUB=-0.5-=/SUB=-(S,Te)-=SUB=-0.5-=/SUB=-." Физика и техника полупроводников 51, no. 6 (2017): 766. http://dx.doi.org/10.21883/ftp.2017.06.44554.8233.

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Методом высокотемпературной рентгеновской дифрактометрии проведено исследование кристаллов состава AgCuSe0.5(S, Te)0.5. Показано, что состав AgCuSe0.5S0.5 при комнатной температуре состоит из Cu1.96S и AgCuSe. Эти фазы при 695 K превращаются в единую гранецентрированную кубическую фазу, превращение обратимо. Состав AgCuSe0.5Te0.5 при комнатной температуре трехфазный, включает Cu2Te, AgCuSe и кубическую фазу. При 444 K обе орторомбические фазы одновременно превращаются в алмазоподобную кубическую фазу, при превращении кубическая фаза играет роль затравки. Из температурной зависимости параметров решетки рассчитаны коэффициенты теплового расширения существующих фаз в обоих составах по основным кристаллографическим направлениям. DOI: 10.21883/FTP.2017.06.44554.8233

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43

Dashdamirova G. E., Asgerov E. B., and Ismailov D. I. "Electron Diffraction Study of Phase Formation in Nano Layers of Cu-=SUB=-2-=/SUB=-Te-In-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-, Cu-In-Te Systems and Short-Range Atomic Order in Amorphous CuIn-=SUB=-5-=/SUB=-Te-=SUB=-8-=/SUB=- Films." Semiconductors 56, no. 5 (2022): 303. http://dx.doi.org/10.21883/sc.2022.05.53421.9794.

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It is shown that with the simultaneous and sequential deposition of films of the Cu2Te-In2Te3 system, as well as copper, indium, and tellurium of the highest purity used as starting materials, ~99.999%, taken in the ratio Cu : In : Te = 1 : 5 : 8, regardless of the deposition order ternary compounds of the compositions CuInTe2, CuIn3Te5, and CuIn5Te8 in the crystalline state are distinguished. During vacuum condensation of films on single-crystal substrates NaCl, KCl and amorphous celluloid cooled by liquid nitrogen to 203 K, the resulting films obtained both by co-evaporation of binary compounds of the Cu2Te-In2Te3 system and by the synthesis of thin layers applied by Cu, In, Te are amorphous. For the first time in nanosized amorphous films of the composition CuIn5Te8, crystallizing in the tetragonal system with the periods of unit cells a=6.162 Angstrem, c=12.291 Angstrem, obtained both under normal conditions and under the influence of an external electric field with a strength of 500 V · cm-1, the structure of the short-range atomic order is established --- the number of nearest neighbors --- coordination numbers and radius of coordination spheres. It was revealed that in amorphous CuIn5Te8 films obtained under the influence of an external electric field, in which the matrices consist of tetrahedral and octahedral environments of atoms, in opposite to films that are formed outside the field, the number of nearest neighbors remains unchanged, the radius of coordination spheres and interatomic distances are somewhat are shortened. Keywords: phase formation, elektronogram, radial distribution function of atoms (RDFA), coherent electron scattering.

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44

Salman, S. H., N. A. Hassan, and G. S. Ahmed. "Copper telluride thin films for gas sensing applications." Chalcogenide Letters 19, no. 2 (February 2022): 125–30. http://dx.doi.org/10.15251/cl.2022.192.125.

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Copper Telluride Thin films of thickness 700nm and 900nm, prepared thin films using thermal evaporation on cleaned Si substrates kept at 300K under the vacuum about (4x10-5 ) mbar. The XRD analysis and (AFM) measurements use to study structure properties. The sensitivity (S) of the fabricated sensors to NO2 and H2 was measured at room temperature. The experimental relationship between S and thickness of the sensitive film was investigated, and higher S values were recorded for thicker sensors. Results showed that the best sensitivity was attributed to the Cu2Te film of 900 nm thickness at the H2 gas.

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45

Zhang, Bao-Guang, He Yang, Zhen Tian, and Jun Wang. "Effect of Ni doping on thermoelectric properties of Ag2Te-Cu2Te composite material." Journal of Alloys and Compounds 870 (July 2021): 159425. http://dx.doi.org/10.1016/j.jallcom.2021.159425.

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46

Qiu, Yuchong, Ying Liu, Jinwen Ye, Jun Li, and Lixian Lian. "Synergistic optimization of carrier transport and thermal conductivity in Sn-doped Cu2Te." Journal of Materials Chemistry A 6, no. 39 (2018): 18928–37. http://dx.doi.org/10.1039/c8ta04993a.

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Doping Sn into the Cu₂Te lattice can synergistically enhance the power factor and decrease thermal conductivity, leading to remarkably optimized zTs. The lone pair electrons from the 5s orbital of Sn can increase the DOS near the Fermi level of Cu₂Te to promote PF and reduce κ_e by decreasing the carrier concentration. This study explores a scalable strategy to optimize the thermoelectric performance for intrinsically highly degenerate semiconductors.

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47

Daszkiewicz, Marek, and Lubomir D. Gulay. "Accidental formation of Gd4(SiO4)2OTe: crystal structure and spectroscopic properties." Acta Crystallographica Section C Structural Chemistry 71, no. 7 (June 20, 2015): 598–601. http://dx.doi.org/10.1107/s2053229615011651.

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Designing new functional materials with increasingly complex compositions is of current interest in science and technology. Complex rare-earth-based chalcogenides have specific thermal, electrical, magnetic and optical properties. Tetragadolinium bis[tetraoxidosilicate(IV)] oxide telluride, Gd4(SiO4)2OTe, was obtained accidentally while studying the Gd2Te3–Cu2Te system. The crystal structure was determined by means of single-crystal X-ray diffraction. The compound crystallizes in the space groupPnma. Three symmetry-independent gadolinium sites were determined. The excitation and emission spectra were collected at room temperature and at 10 K. Gd4(SiO4)2OTe appears to be a promising optical material when doped with rare-earth ions.

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48

Kim, Sangsu, Jeehoon Jeon, Jonghee Suh, Jinki Hong, TaeYueb Kim, KiHyun Kim, and ShinHaeng Cho. "Comparative Study of Cu2Te and Cu Back Contact in CdS/CdTe Solar Cell." Journal of the Korean Physical Society 72, no. 7 (April 2018): 780–85. http://dx.doi.org/10.3938/jkps.72.780.

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49

Ferizović, Dino, and Martin Muñoz. "Optical, electrical and structural properties of Cu2Te thin films deposited by magnetron sputtering." Thin Solid Films 519, no. 18 (July 2011): 6115–19. http://dx.doi.org/10.1016/j.tsf.2011.04.027.

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50

Mukherjee, Shriparna, Sourav Ghosh, and Kamanio Chattopadhyay. "Ultralow thermal conductivity and high thermoelectric figure of merit in Cu2Te–Ag2Te composites." Journal of Alloys and Compounds 848 (December 2020): 156540. http://dx.doi.org/10.1016/j.jallcom.2020.156540.

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