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Journal articles on the topic 'Cu-Si systems'

Author: Grafiati

Published: 6 September 2023

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1

Cao Bo, Bao Liang-Man, Li Gong-Ping, and He Shan-Hu. "Diffusion and interface reaction of Cu and Si in Cu/SiO2/Si (111) systems." Acta Physica Sinica 55, no. 12 (2006): 6550. http://dx.doi.org/10.7498/aps.55.6550.

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2

Laurila, T., K. Zeng, J. Molarius, T. Riekkinen, I. Suni, and J. K. Kivilahti. "Effect of oxygen on the reactions in Si/Ta/Cu and Si/TaC/Cu systems." Microelectronic Engineering 64, no. 1-4 (October 2002): 279–87. http://dx.doi.org/10.1016/s0167-9317(02)00800-6.

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3

Soldi, Luca, Annabelle Laplace, Mathieu Roskosz, and Stéphane Gossé. "Phase diagram and thermodynamic model for the Cu-Si and the Cu-Fe-Si systems." Journal of Alloys and Compounds 803 (September 2019): 61–70. http://dx.doi.org/10.1016/j.jallcom.2019.06.236.

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4

ARSLAN, Hüseyin. "Viscosity Values of Ternary Au-Ag-Cu, Al-Cu-Si and Quaternary Al-Cu-Mg-Si Alloy Systems." Afyon Kocatepe University Journal of Sciences and Engineering 23, no. 4 (August 29, 2023): 865–73. http://dx.doi.org/10.35414/akufemubid.1198907.

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Bu çalışmada, üçlü Au-Ag-Cu sıvı alaşım sisteminin, Al-Cu-Si sıvı alaşım sisteminin ve dörtlü Al-Cu-Mg-Si sıvı alaşım sisteminin viskoziteleri altının, aliminyumun ve bakırın bir fonksiyonu olarak Au-Ag-Cu (xAg / xCu=0.543) 1373 K de, Alx(Cu50-Si50)(1-x), Cux(Al50-Si50)(1-x) 1375 K de ve Al-Cu7.6-Mg1.99-Si34.76 1500 K de farklı geometrik modeller kullanılarak hesaplanmıştır. Tüm sonuçlar, özellikle de Muggianu modeli ile hesaplanan sonuçlar, deneysel sonuçlarla iyi bir uyum göstermiştir. xSi = xCu, xMg / xCu = r ve r = 0.1, 0.5, 1 oranlarda Al-Cu-Mg-Si alaşımlarının viskozitelerinin alüminyumun bir fonksiyonu olarak büyük bileşimsel bağımlılık gösterdiği ve Al kompozisyonunun (0.4-0.8) arasındaki değerlerine eşlik eden viskozite değerlerinin max. ve min. (1.4-0.3) mPas olduğu görüldü.

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5

Umemoto, M., M. Udaka, K. Kawasaki, and X. D. Liu. "Formation of ultrafine powders of binary alloy systems by plasma jet." Journal of Materials Research 13, no. 6 (June 1998): 1511–16. http://dx.doi.org/10.1557/jmr.1998.0210.

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Recently, a new method, i.e., a plasma jet method, was developed in our lab for the production of ultrafine powders. In the present work, we investigated the formation of binary Al–Fe, Al–Si, Fe–Si, Al–Cu, Al–Ni, Ni–Ti, Fe–Cu, and Fe–Ti ultrafine powders using this method. Premixed pure elemental powders of various compositions of Al–Fe, Al–Si, Fe–Si, Al–Cu, Al–Ni, Ni–Ti, Fe–Cu, and Fe–Ti were used as starting materials. These premixed powders were injected into the plasma jet of Ar–N2 working gas to form ultrafine powders. The obtained ultrafine powders were characterized by x-ray diffraction and transmission electron microscope to check the microstructures of ultrafine particles.

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6

Zhao, Jing Rui, Yong Du, Li Jun Zhang, Shu Hong Liu, Jin Huan Xia, and Jin Wei Wang. "Thermodynamic Calculation of the Liquidus Projections of the Al-Cu-Fe-Mg, Al-Cu-Mg-Si, and Al-Fe-Mg-Si Quaternary Systems on Al-Rich Corner." Materials Science Forum 993 (May 2020): 1031–42. http://dx.doi.org/10.4028/www.scientific.net/msf.993.1031.

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The thermodynamic calculations of Al-Cu-Fe-Mg, Al-Cu-Mg-Si and Al–Fe–Mg–Si quaternary systems were carried out using CALPHAD method, based on the Al–Cu–Fe–Mg–Si thermodynamic database. The liquidus projection of Al–Cu–Fe–Mg, Al–Cu–Mg–Si and Al–Fe–Mg–Si quaternary systems at Al-rich corner were constructed, and the solidification structures of Al-12Cu-7Mg-1Fe, Al-14Cu-2Mg-4Si, Al-0.3Fe-6Mg-12Si (wt.%) alloys were analyzed by the Scheil solidification simulation. The calculated results agree well with the previous experimental data. The liquidus projections of three quaternary aluminum alloys at the Al-rich corner were accurately plotted, which could be helpful for the analysis of solidification process of multicomponent alloy systems, and provide an important theoretical basis for the material design of aluminum alloys.

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7

Jacobs, MHG, and PJ Spencer. "Thermodynamic evaluation of the systems Cu-Si, Mg-Ni, Si-Sn and Si-Zn." Journal de Chimie Physique 90 (1993): 167–73. http://dx.doi.org/10.1051/jcp/1993900167.

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8

Wang, Aijun, Liangcai Zhou, Yi Kong, Yong Du, Zi-Kui Liu, Shun-Li Shang, Yifang Ouyang, Jiong Wang, Lijun Zhang, and Jianchuan Wang. "First-principles study of binary special quasirandom structures for the Al–Cu, Al–Si, Cu–Si, and Mg–Si systems." Calphad 33, no. 4 (December 2009): 769–73. http://dx.doi.org/10.1016/j.calphad.2009.10.007.

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9

Gao, Xing Xin, Yan Hui Jia, Gong Ping Li, Jun Ping Ma, and Yun Bo Wang. "The Diffusion and Interfacial Reaction of Cu/Si(100) Systems." Advanced Materials Research 287-290 (July 2011): 2302–7. http://dx.doi.org/10.4028/www.scientific.net/amr.287-290.2302.

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The Cu thin films have been deposited on Si(100) substrates by magnetron sputtering at room temperature. The samples were heat treated by conventional thermal annealing in different temperatures: 230°C, 350°C, 450°C and 500°C. The interface reaction and atomic diffusion of the Cu films and Si substrates between as-deposited and as-annealed at different temperatures are investigated by means of Rutherford backscattering spectrometry(RBS) and X-ray diffraction(XRD). Some significant results are obtained on the following aspects: (1) According to RBS, as-deposited Cu/Si(100) samples are not found interdiffusion, and the onset temperature of interdiffusion is 230°C. With the increase of temperature, the interdiffusion becomes more apparent. (2) After annealing at 230°C, the XRD results of the samples showed formation of Cu3Si(300). As the annealing temperature increases, the other copper-silicide phases are formed. The main copper-silicide phase is Cu3Si(300) after annealing at 500°C. It means that Cu3Si is a reliable copper-silicide in a wide range for the Cu/Si(100) interface.

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10

Zhao, Jing Rui, Yong Du, Li Jun Zhang, Shu Hong Liu, Jin Huan Xia, and Jin Wei Wang. "Thermodynamic Calculation of the Liquidus Projections of the Al-Cu-Fe-Si and Al-Cu-Fe-Mg-Si Multicomponent Systems on Al-Rich Side." Materials Science Forum 993 (May 2020): 984–95. http://dx.doi.org/10.4028/www.scientific.net/msf.993.984.

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The thermodynamic calculations of Al–Cu–Fe–Si quaternary system and Al–Cu–Fe–Mg–Si quinary system were carried out using CALPHAD approach based on the Al–Cu–Fe–Mg–Si thermodynamic database. The liquidus surface projection of Al–Cu–Fe–Si quaternary system at the Al-rich corner was constructed, and then the solidification structures of four Al–Cu–Fe–Si alloys were analyzed by the Gulliver-Scheil solidification simulation. The calculated results were in good agreement with the previous experimental data. The liquidus surface projections of A1–Cu–Fe–Mg–Si quinary system at the region of Al-Cu, Al-Si and Al-Mg were constructed, respectively. The liquidus projection of the multicomponent aluminum alloy system at the Al-rich side was accurately drawn, which could accurately predict the primary phase in the solidification process of the alloy. This work has an important guiding significance for the design of the aluminum alloys.

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11

Benazzouz, C., N. Benouattas, and A. Bouabellou. "Competitive diffusion of gold and copper atoms in Cu/Au/Si and Au/Cu/Si annealed systems." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 230, no. 1-4 (April 2005): 571–76. http://dx.doi.org/10.1016/j.nimb.2004.12.103.

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12

Eryomina, Marina, and Svetlana Lomayeva. "Wet Ball Milling Applied to Production of Composites and Coatings Based on Ti, W, and Nb Carbides." Powders 2, no. 2 (June 15, 2023): 499–514. http://dx.doi.org/10.3390/powders2020031.

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The paper demonstrates the potential of wet ball milling of metals for the synthesis of various carbides and carbohydrides. The work reports on multicomponent carbides formed in Ti-(Cu/Fe/Si)-C, W-Fe-C, and Nb-(Cu/Fe/Si/Al)-C systems, as well as metastable or high-temperature intermetallics formed in Ti-Si, Nb-Si, Nb-Al, and Nb-Cu-Fe systems, which are stabilized with interstitial carbon. The formation of phase composition of powders fabricated under mechanochemical synthesis and subsequent thermal treatment has been studied. The as-fabricated powders have been used to produce bulk compacts and to apply wear-resistant coatings on steel (iron).

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13

Hong, Stella Q., Q. Z. Hong, Jian Li, and J. W. Mayer. "Interdiffusion and reaction in Cu/PtSi/Si(100) systems." Journal of Applied Physics 75, no. 8 (April 15, 1994): 3959–63. http://dx.doi.org/10.1063/1.356016.

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14

Parditka, B., Mariana Verezhak, and Mohammed Ibrahim. "Phase Growth in Amorphous Si-Cu and Si-Co Systems: Combination of SNMS, XPS, XRD, and APT Techniques." Defect and Diffusion Forum 353 (May 2014): 269–74. http://dx.doi.org/10.4028/www.scientific.net/ddf.353.269.

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Abstract. It is shown, by the combination of SNMS, (Secondary Neutral Mass Spectrometry), XRD, XPS and APT (Atom Probe Technique) that the growth of the Cu3Si crystalline layer at 408 K between the amorphous Si and nanocrystalline Cu thin films follows a linear law and the shifts of the Cu3Si/Cu and Cu3Si/a-Si interfaces approximately equally contributed to the growth of this phase. It is also illustrated that the Si atoms diffuse fast into the grain boundaries of the nanocrystalline Cu, leading to Si segregation. Both the SNMS and APT results indicate that even during the deposition of Cu on the amorphous Si an intermixed region is formed at the interface. This region easily transforms into a homogeneous Cu3Si crystalline reaction layer subsequently which further grows following apparently an interface controlled linear kinetics. Similar experiments performed in Co/a-Si system to study the formation and growth kinetics of the intermetallic phase. However, interestingly, homogenous formation of the new phase at the Co/a-Si interface was not always observed.

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15

Santra, Sangeeta, Hongqun Dong, Tomi Laurila, and Aloke Paul. "Role of different factors affecting interdiffusion in Cu(Ga) and Cu(Si) solid solutions." Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences 470, no. 2161 (January 8, 2014): 20130464. http://dx.doi.org/10.1098/rspa.2013.0464.

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A detailed diffusion study was carried out on Cu(Ga) and Cu(Si) solid solutions in order to assess the role of different factors in the behaviour of the diffusing components. The faster diffusing species in the two systems, interdiffusion, intrinsic and impurity diffusion coefficients, are determined to facilitate the discussion. It was found that Cu was more mobile in the Cu–Si system, whereas Ga was the faster diffusing species in the Cu–Ga system. In both systems, the interdiffusion coefficients increased with increasing amount of solute (e.g. Si or Ga) in the matrix (Cu). Impurity diffusion coefficients for Si and Ga in Cu, found out by extrapolating interdiffusion coefficient data to zero composition of the solute, were both higher than the Cu tracer diffusion coefficient. These observed trends in diffusion behaviour could be rationalized by considering: (i) formation energies and concentration of vacancies, (ii) elastic moduli (indicating bond strengths) of the elements and (iii) the interaction parameters and the related thermodynamic factors. In summary, we have shown here that all the factors introduced in this paper should be considered simultaneously to understand interdiffusion in solid solutions. Otherwise, some of the aspects may look unusual or even impossible to explain.

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16

Bo, Cao, Li Gong-Ping, Chen Xi-Meng, Cho Seong-Jin, and Kim Hee. "Atomic Diffusion in Cu/Si (111) and Cu/SiO 2 /Si (111) Systems by Neutral Cluster Beam Deposition." Chinese Physics Letters 25, no. 4 (April 2008): 1400–1402. http://dx.doi.org/10.1088/0256-307x/25/4/064.

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17

Liu, D., H. V. Atkinson, and H. Jones. "Thermodynamic prediction of thixoformability in alloys based on the Al–Si–Cu and Al–Si–Cu–Mg systems." Acta Materialia 53, no. 14 (August 2005): 3807–19. http://dx.doi.org/10.1016/j.actamat.2005.04.028.

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18

Shao, Wenbo, Yunkai Sun, and Giovanni Zangari. "Electrodeposition of Cu-Ag Alloy Films at n-Si(001) and Polycrystalline Ru Substrates." Coatings 11, no. 12 (December 20, 2021): 1563. http://dx.doi.org/10.3390/coatings11121563.

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Electrodeposition of Cu-Ag films from acidic sulfate bath was conducted at n-Si(001) and polycrystalline Ru substrates. Significant nucleation overpotential of 0.4 V is observed with the Cu-Ag bath at n-Si(001) substrate, whereas the electrodeposition of Cu-Ag at Ru substrate is influenced by Ru oxides at the surface. Incomplete coverage of Si substrate by Cu-Ag deposit was observed from the deposition systems without Ag(I), or with 0.1 mM Ag(I), comparing with the compact Cu-Ag film obtained with the deposition bath containing 0.01 mM Ag(I). Layered and faceted Cu-Ag deposit was observed at small Cu deposition overpotential with the Ru substrate. Phase composition of the Cu-Ag deposits at n-Si(001) substrate from electrolyte with various Ag(I) concentrations is examined by XRD. Limited solubility of Ag (0.4 at.%) was observed in fcc-Cu until phase separation occurs. The classical model for nucleation kinetics in electrodeposition was used to examine the potentiostatic transients of the Cu-Ag electrodeposition at n-Si(001) substrate.

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19

Petrović, Suzana, Nevena Božinović, Vladimir Rajić, Danijela Stanisavljević Ninković, Danilo Kisić, Milena J. Stevanović, and Emmanuel Stratakis. "Cell Response on Laser-Patterned Ti/Zr/Ti and Ti/Cu/Ti Multilayer Systems." Coatings 13, no. 6 (June 16, 2023): 1107. http://dx.doi.org/10.3390/coatings13061107.

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Arranged patterns obtained via ultrafast laser processing on the surface of Ti/Cu/Ti/Si and Ti/Zr/Ti/Si thin-film systems are reported. Two differently designed multilayer thin films Ti/Cu/Ti/Si and Ti/Zr/Ti/Si were deposited on silicon using the ion sputtering method. The bioactive surfaces of these systems involve the formation of laser-induced periodic surface structures (LIPSS) in each of the laser-written lines of mesh patterns on 5 × 5 mm areas. The formation of nano- and micro-patterns with an ultra-thin oxide film on the surfaces was used to observe the effects of morphology and proliferation of the MRC-5 cell culture line. To determine whether Ti-based thin films have a toxic effect on living cells, an MTT assay was performed. The relative cytotoxic effect, as a percentage of surviving cells, showed that there was no difference in cell number between the Ti-based thin films and the control cells. There was also no difference in the viability of the MRC-5 cells, except for the Ti/Cu/Ti/Si system, where there was a slight 10% decrease in cell viability.

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20

Benouattas, N., A. Mosser, D. Raiser, J. Faerber, and A. Bouabellou. "Behaviour of copper atoms in annealed Cu/SiOx/Si systems." Applied Surface Science 153, no. 2-3 (January 2000): 79–84. http://dx.doi.org/10.1016/s0169-4332(99)00366-9.

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21

Shakhnazarov, Karen Yu. "INTERMEDIATE PHASE MARKERS IN Al-Si, Fe-C AND Cu-Al SYSTEMS." Vestnik of Nosov Magnitogorsk State Technical University 14, no. 3 (2016): 71–77. http://dx.doi.org/10.18503/1995-2732-2016-14-3-71-77.

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22

Ovsyannikov, Boris V., and Viktor M. Zamyatin. "Behavior of Scandium in Aluminum Alloys of Different Alloying Systems." Materials Science Forum 794-796 (June 2014): 1002–7. http://dx.doi.org/10.4028/www.scientific.net/msf.794-796.1002.

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Microstructure and composition of elements in phases of homogenized ingots in aluminum alloys of various alloying systems: Al-Mg-Mn-Si, Al-Mg-Si-Cu, and Al-Zn-Mg-Cu, were examined using a method of scanning electronic microscopy and X-ray microanalysis. Besides basic alloying elements of magnesium, zinc, copper, silicon, and manganese, alloy composition contained additional alloying elements, including zirconium and scandium. Presence of intermetallic compounds of various chemical composition insoluble during ingot homogenization was found in microstructure of examined samples. It is found that zirconium and scandium are jointly present in composition of some intermetallic compounds containing additional alloying elements of alloys.

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23

Frantz, Jonathan M., Sushant Khandekar, and Scott Leisner. "Silicon Differentially Influences Copper Toxicity Response in Silicon-accumulator and Non-accumulator Species." Journal of the American Society for Horticultural Science 136, no. 5 (September 2011): 329–38. http://dx.doi.org/10.21273/jashs.136.5.329.

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The use of copper (Cu) in agriculture is widespread as a pesticide, and it is present in high concentrations in certain types of manures. As the use of Cu continues and manure management is incorporated into sustainable systems, the likelihood of Cu toxicity increases. Supplemental silicon has been used to successfully counteract potential micronutrient toxicity. There is currently considerable debate regarding the value of including silicon (Si) as a nutrient in fertility programs and as such, it is not part of a typical management practice in floriculture crop production in the United States. We investigated the potential for Si to ameliorate the effects of Cu toxicity in both a Si-accumulating [zinnia (Zinnia elegans)] and a Si-non-accumulating [snapdragon (Antirrhinum majus)] species. Using visible stress indicators and dry weight analysis, it initially appeared that Si was a significant benefit to only zinnia under Cu toxicity. Enzymatic assays and elemental analysis of leaves, stems, and roots revealed that both species responded to supplemental Si, showing evidence of reduced stress and nutrient concentrations more similar to healthy, control plants than plants exposed to Cu toxicity. Although there appear to be differences in the extent of Si-mediated amelioration of Cu toxicity between these two plants, both responded to supplemental Si. This adds to the growing body of evidence that all plants likely have Si-mediated responses to stress, and its inclusion into fertility programs should be more broadly considered than current practices.

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24

Curle, Ulyate Andries, Heinrich Möller, and Gonasagren Govender. "R-HPDC in South Africa." Solid State Phenomena 192-193 (October 2012): 3–15. http://dx.doi.org/10.4028/www.scientific.net/ssp.192-193.3.

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The history of semi-solid metal forming and in particular rheo-high pressure die casting at the Council for Scientific and Industrial Research in South Africa is discussed. Processing flexibility is demonstrated on the Al-Si-Mg, Al-Mg-Si, Al-Cu-Mg and Al-Zn-Mg-Cu casting and wrought alloy systems as well as on high purity aluminium, unmodified Al-Si binary eutectic, metal matrix composites and magnesium alloys. Material properties are highlighted.

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25

Cao, Bo, Tong Rui Yang, and Gong Ping Li. "Surface Morphology and Interface Reaction of Cu/SiO₂/Si (111) Systems Prepared by Radio Frequency Magnetron Sputtering." Advanced Materials Research 487 (March 2012): 697–700. http://dx.doi.org/10.4028/www.scientific.net/amr.487.697.

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The Cu thin films were prepared at room temperature by radio frequency magnetron sputtering on p-type Si (111) substrates. The surface morphology and interface reaction of Cu thin films were studied at different deposition condition by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results show that the existence of the native silicon oxide layer suppresses the interdiffusion and interface reaction of Cu and Si. The formation of the copper-silicide phase is observed by XRD when the annealing temperature arrives at 450 °C.

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26

Wang, Shi-Qing. "Barriers Against Copper Diffusion into Silicon and Drift Through Silicon Dioxide." MRS Bulletin 19, no. 8 (August 1994): 30–40. http://dx.doi.org/10.1557/s0883769400047710.

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The Semiconductor Industry Association (SIA) roadmap calls for the incorporation of Cu plugs (vias) integrated with interconnects in 1997. Copper is being evaluated for ULSI metallization because of its lower bulk electrical resistivity and its superior resistance to electromigration and stress voiding as compared to commonly used aluminum and its alloys. One of the major drawbacks of Cu is its fast diffusion in Si and drift in SiO2-based dielectrics, resulting in the deterioration of devices at low temperatures. Hence a diffusion barrier is necessary between Cu and Si or SiO2. Figure 1 is a cross section ofa three metal level interconnect structure using Cu as the conductive material. The interlevel dielectrics (ILD) could be conventional SiO2-based materials or more ideally, materials with low dielectric constants such as polyimide. If conventional SiO2 is used, then Cu plugs and interconnects have to be enclosed in diffusion/drift barriers so that Cu will not move into Si or SiO2 under thermal stress or biased temperature stress (BTS).This article reviews the published studies on conductive diffusion barriers between thin Cu films and Si substrates. In addition, the work on diffusion and drift of Cu into commonly used inorganic dielectric systems is also summarized. Finally, some concerns involving diffusion/drift barriers between Cu and Si or SiO2 for sub-0.5 μm feature size with high aspect ratios are discussed.

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27

Rajaram, G., S. Kumaran, and T. Srinivas Rao. "Tensile Behaviour of Al-Si Alloy and Al-Si/Graphite Composites at Elevated Temperatures." Materials Science Forum 710 (January 2012): 457–62. http://dx.doi.org/10.4028/www.scientific.net/msf.710.457.

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The high temperature tensile behaviour of Al-Si alloy and two of its composite systems with graphite as major reinforcement were investigated. The composites were developed by the stir casting method, wherein a mixture of graphite (3 wt %) and Cu / Ni (2 wt% each) were added into the molten Al-Si alloy to fabricate two systems such as Al-Si-Cu/graphite composite and Al-Si-Ni/graphite composite. The properties of composites were better than that of the matrix alloy. Tensile behaviour of alloy and composites were studied at different temperatures from room temperature to 300°C. It is found that the tensile strength of the alloy and composites were decreasing with increase in temperature. The transition elements (Cu / Ni) have played the key role in improving the ultimate tensile and yield strength of the composites over the alloy. The flow stress of the composite is more than that of the alloy. The strain hardening exponent value continuously drops with the increase of tensile temperature due to the thermal softening effect. The % elongation of the alloy is more than that of the composites. Fracture surfaces of the samples are analyzed by scanning electron microscope to understand the fracture mechanisms. Fractography reveals that the fracture behaviour of the alloy changes from cleavage mode at room temperature to complete ductile mode at high temperature.

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28

Yu, Shimeng, Fang Cheng, Lian He, Weigang Tang, Yongsheng Wang, Rong Chen, Chenglu Hu, Xiao Ma, and Hangyan Shen. "Enhancing Wettability of Cu3P/Cu Systems through Doping with Si, Sn, and Zr Elements: Insights from First Principles Analysis." Materials 16, no. 6 (March 21, 2023): 2492. http://dx.doi.org/10.3390/ma16062492.

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Explaining the wetting mechanism of Cu–P brazing materials and Cu remains challenging. This fundamental research aims to reveal the wettability mechanism of Si, Sn, and Zr doping on the interfacial bond strength of the Cu3P/Cu system through the first principles study. We carried out several sets of calculations to test the validity of the result; included in the work are those used to establish the interfacial structure and to analyze the effect of doping on the wettability. Specific analysis was carried out in terms of three aspects: the work of adhesion (Wad), the charge density difference, and the density of states (DOS). The calculated results show that doping with Si, Sn, and Zr elements can effectively improve the wettability within the CuP/Cu interface with very high accuracy, and is particularly effective when doped with Zr. These results provide an insightful theoretical guide for enhancing the CuP/Cu system’s wettability by adding active elements.

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29

Liu, Tie, Yin Liu, Qiang Wang, Yan Wang, Kai Wang, and Ji Cheng He. "Effects of a High Magnetic Field on the Solidification Behavior of Binary Al-Si and Ag-Cu Systems." Advanced Materials Research 421 (December 2011): 792–95. http://dx.doi.org/10.4028/www.scientific.net/amr.421.792.

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To investigate the effect of high magnetic fields on the solidification behavior of binary eutectic system, solidification and quenching experiments of Al-11.8 wt.%Si and Ag-10 wt.%Cu alloys were carried out with and without an 8.8 T high magnetic field. It was found that the application of the high magnetic field could increase the concentration of Si in the primary Al and Cu in the primary Ag at their eutectic temperatures, but could not obviously affect the Si concentration in the primary Al at room temperature. The above increase can be attributed to the weakness of the solute diffusion at the liquid-solid interface during solidification caused by the high magnetic field.

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30

Miettinen, J., and G. Vassilev. "Thermodynamic re-optimization of the Cu-Mg-Sn system at the Cu-Mg side." Journal of Mining and Metallurgy, Section B: Metallurgy 48, no. 1 (2012): 53–62. http://dx.doi.org/10.2298/jmmb110731008m.

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Thermodynamic description of the ternary Cu-Mg-Sn system at its Cu-Mg side is presented. The thermodynamic parameters of the binary sub-systems, Cu-Mg, Cu-Sn and Mg-Sn, are taken from the earlier SGTE-based assessments (modifying the Mg-Sn description slightly) and those of the Cu-Mg-Si system are optimized in this study using the experimental thermodynamic and phase equilibrium data. The solution phases of the systems are described with the substitutional solution model and the intermetallic Cu2Mg compound (Laves C15), treated as simple semi-stoichiometric phases of the (A,B)pCq type, is described with the twosublattice model. The present ternary description is valid for tin contents up to 45 wt% (xSn?0.30).

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31

Takeyama, Mayumi, Shinya Kagomi, Atsushi Noya, Kouichirou Sakanishi, and Katsutaka Sasaki. "Application of amorphous Cu–Zr binary alloy as a diffusion barrier in Cu/Si contact systems." Journal of Applied Physics 80, no. 1 (July 1996): 569–73. http://dx.doi.org/10.1063/1.362763.

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32

Hübner, R., R. Reiche, M. Hecker, N. Mattern, V. Hoffmann, K. Wetzig, H. Heuer, Ch Wenzel, H. J. Engelmann, and E. Zschech. "Void formation in the Cu layer during thermal treatment of SiNx/Cu/Ta73Si27/SiO2/Si systems." Crystal Research and Technology 40, no. 1-2 (December 27, 2004): 135–42. http://dx.doi.org/10.1002/crat.200410316.

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33

Akopyan, T. K., N. A. Belov, A. G. Padalko, N. V. Letyagin, and N. N. Avksent’yeva. "Analysis of the Effect of Hydrostatic Pressure on the Nonvariant Eutectic Transformation in Al–Si, Al–Cu, and Al–Cu–Si Systems." Physics of Metals and Metallography 120, no. 6 (June 2019): 593–99. http://dx.doi.org/10.1134/s0031918x19060024.

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34

Takeyama, Mayumi B., Atsushi Noya, and Kouichirou Sakanishi. "Diffusion barrier properties of ZrN films in the Cu/Si contact systems." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 18, no. 3 (2000): 1333. http://dx.doi.org/10.1116/1.591382.

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35

Hao, D., M. Bu, Y. Wang, Y. Tang, Q. Gao, M. Wang, B. Hu, and Y. Du. "Thermodynamic modeling of the Na-X (X = Si, Ag, Cu, Cr) systems." Journal of Mining and Metallurgy, Section B: Metallurgy 48, no. 2 (2012): 273–82. http://dx.doi.org/10.2298/jmmb120113024h.

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The Na-X (X = Si, Ag, Cu, Cr) systems have been critically reviewed and modeled by means of the CALPHAD approach. The two compounds, NaSi and Ag2Na, are treated as stoichiometric ones. By means of first-principles calculations, the enthalpies of formation at 0 K for the LT-NaSi (low temperature form of NaSi) and Ag2Na have been computed to be -5210 and -29821.8 Jmol-1, respectively, with the desire to assist thermodynamic modeling. One set of self-consistent thermodynamic parameters is obtained for each of these binary systems. Comparisons between calculated and measured phase diagrams show that most of the experimental information can be satisfactorily accounted for by the present thermodynamic descriptions.

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36

Takeyama, Mayumi, and Atsushi Noya. "Preparation ofWNxFilms and Their Diffusion Barrier Properties in Cu/Si Contact Systems." Japanese Journal of Applied Physics 36, Part 1, No. 4A (April 15, 1997): 2261–66. http://dx.doi.org/10.1143/jjap.36.2261.

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37

Jacobs, M. H. G., and P. J. Spencer. "Thermodynamic evaluations of the systems AlSiZn and CuMgNi." Journal of Alloys and Compounds 220, no. 1-2 (April 1995): 15–18. http://dx.doi.org/10.1016/0925-8388(94)06017-7.

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38

POLITANO, ANTONIO, and GENNARO CHIARELLO. "COLLECTIVE ELECTRONIC EXCITATIONS IN SYSTEMS EXHIBITING QUANTUM WELL STATES." Surface Review and Letters 16, no. 02 (April 2009): 171–90. http://dx.doi.org/10.1142/s0218625x09012482.

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We present high-resolution electron energy loss spectroscopy (HREELS) measurements on surface plasmon (SP) dispersion in systems exhibiting quantum well states (QWS), i.e. Na / Cu (111), Ag / Cu (111), and Ag / Ni (111). Our results demonstrate that the dominant coefficient of SP dispersion for thin and layer-by-layer Ag films presenting QWS is quadratic even at small q||, in contrast with previous measurements on Ag semi-infinite media and Ag thin films deposited on Si (111). We suggest that this behavior is due to screening effects enhanced by the presence of QWS shifting the position of the centroid of the induced charge less inside the geometrical surface compared with Ag surfaces and Ag / Si (111). For ultrathin Ag films, i.e. two layers, the dispersion was found to be not positive, as theoretically predicted. Annealing of the Ag film caused an enhancement of the free-electron character of the QWS, thus inducing a negative linear term of the dispersion curve of the SP. Moreover, we report the first experimental evidence of chemical interface damping in thin films for K / Ag / Ni (111). As regards Na / Cu (111), we found a different dispersion curve compared with thick Na films, thus confirming the enhanced screening by Na QWS. Results reported here should shed light on the influence of QWS on dynamical screening phenomena in thin films.

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39

Akopyan, T. K., V. S. Zolotorevskii, and A. V. Khvan. "Calculation of phase diagrams of systems Al-Cu-Zn-Mg and Al-Cu-Zn-Mg-Fe-Si." Russian Journal of Non-Ferrous Metals 54, no. 4 (July 2013): 307–13. http://dx.doi.org/10.3103/s1067821213040020.

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40

Salamakha, P., and O. Zaplatynsky. "X-ray investigation of the ternary NdCuSi and NdCuPb systems at 870 K." Journal of Alloys and Compounds 260, no. 1-2 (September 1997): 127–30. http://dx.doi.org/10.1016/s0925-8388(97)00164-3.

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41

Martucci, Alessandra, Emilio Bassini, and Mariangela Lombardi. "Effect of Cu Content on the PBF-LB/M Processing of the Promising Al-Si-Cu-Mg Composition." Metals 13, no. 7 (July 23, 2023): 1315. http://dx.doi.org/10.3390/met13071315.

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Over the past few years, several studies have been conducted on the development of Al-Si-Cu-Mg alloys for PBF-LB/M processing. The attention gained by these systems can be attributed to their light weight and strength provided by a solid solution in the as-built state and by precipitation after heat treatment. However, published studies have kept the copper content below its solubility limit in the Al-Cu binary system under equilibrium conditions (5.65 wt%). The present study aims to explore Al-Si-Cu-Mg systems with high copper content, starting with the well-known AlSi10Cu4Mg system, moving towards AlSi10Cu8Mg, and arriving at AlCu20Si10Mg, a system never before processed with PBF-LB/M. Through the SST approach, the production of bulk samples, advanced microstructural characterization by SEM and FESEM analysis, phase identification by XRD analysis, and preliminary investigation of the mechanical properties through Vickers micro indentations, the effects of copper quantities on the processability, microstructural properties, and mechanical behavior of these compositions were investigated. The obtained results demonstrated the benefits of the supersaturated solid solution and the fine precipitation resulting from the addition of high Cu contents. In particular, the AlCu20Si10Mg system showed a very distinctive microstructure and unprecedented microhardness values.

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42

Ehrlich, Lisa, Robert Gericke, Erica Brendler, and Jörg Wagler. "(2-Pyridyloxy)silanes as Ligands in Transition Metal Coordination Chemistry." Inorganics 6, no. 4 (October 31, 2018): 119. http://dx.doi.org/10.3390/inorganics6040119.

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Proceeding our initial studies of compounds with formally dative TM→Si bonds (TM = Ni, Pd, Pt), which feature a paddlewheel arrangement of four (N,S) or (N,N) bridging ligands around the TM–Si axis, the current study shows that the (N,O)-bidentate ligand 2-pyridyloxy (pyO) is also capable of bridging systems with TM→Si bonds (shown for TM = Pd, Cu). Reactions of MeSi(pyO)3 with [PdCl2(NCMe)2] and CuCl afforded the compounds MeSi(µ-pyO)4PdCl (1) and MeSi(µ-pyO)3CuCl (2), respectively. In the latter case, some crystals of the Cu(II) compound MeSi(µ-pyO)4CuCl (3) were obtained as a byproduct. Analogous reactions of Si(pyO)4, in the presence of HpyO, with [PdCl2(NCMe)2] and CuCl2, afforded the compounds [(HpyO)Si(µ-pyO)4PdCl]Cl (4), (HpyO)2Si[(µ-pyO)2PdCl2]2 (5), and (HpyO)2Si[(µ-pyO)2CuCl2]2 (6), respectively. Compounds 1–6 and the starting silanes MeSi(pyO)3 and Si(pyO)4 were characterized by single-crystal X-ray diffraction analyses and, with exception of the paramagnetic compounds 3 and 6, with NMR spectroscopy. Compound 2 features a pentacoordinate Si atom, the Si atoms of the other complexes are hexacoordinate. Whereas compounds 1–4 feature a TM→Si bond each, the Si atoms of compounds 5 and 6 are situated in an O6 coordination sphere, while the TMCl2 groups are coordinated to pyridine moieties in the periphery of the molecule. The TM–Si interatomic distances in compounds 1–4 are close to the sum of the covalent radii (1 and 4) or at least significantly shorter than the sum of the van-der-Waals radii (2 and 3). The latter indicates a noticeably weaker interaction for TM = Cu. For the series 1, 2, and 3, all of which feature the Me–Si motif trans-disposed to the TM→Si bond, the dependence of the TM→Si interaction on the nature of TM (Pd(II), Cu(I), and Cu(II)) was analyzed using quantum chemical calculations, that is, the natural localized molecular orbitals (NLMO) analyses, the non-covalent interaction (NCI) descriptor, Wiberg bond order (WBO), and topological characteristics of the bond critical points using the atoms in molecules (AIM) approach.

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43

El-Beltagi, Hossam S., Mahmoud R. Sofy, Mohammed I. Aldaej, and Heba I. Mohamed. "Silicon Alleviates Copper Toxicity in Flax Plants by Up-Regulating Antioxidant Defense and Secondary Metabolites and Decreasing Oxidative Damage." Sustainability 12, no. 11 (June 10, 2020): 4732. http://dx.doi.org/10.3390/su12114732.

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In recent years, nutrient management has gained much attention as a way to mitigate heavy metal stress. Silicon (Si) promotes plant defense responses against toxic metal stresses. In this study, we evaluated the effects of silicon (Si) on copper (Cu) toxicity in two flax genotypes (Sakha 1 and Sakha 2) as it relates to plant growth, yield attributes, total chlorophyll, nucleic acid content, enzymatic and non-enzymatic antioxidants, oxidative damage, lipid peroxidation, copper and silicon content, and fatty acid composition. The results showed that Cu (100 and 200 µM) inhibited plant growth and increased Cu accumulation in soil, roots, and shoots. Cu significantly decreased the yield attributes, total chlorophyll by 9.5% and 22% in Sakha 1 and by 22.5% and 29% in Sakha 2, and enhanced the accumulation of non-enzymatic (tocopherol), enzymatic antioxidants such as superoxide dismnutase, peroxidase, ascorbate peroxidase and catalase) and secondary metabolites (phenol and flavonoids). The DNA content significantly decreased in stressed plants with 100 and 200 µM Cu about 22% and 44%, respectively, in Sakha 1 and about 21.6% and 34.7% in Sakha 2, and RNA content also decreased by about 20% and 29%, respectively, in Sakha 1 and by about 2% and 13% in Sakha 2 compared to the control plant. Furthermore, Cu stress accelerated the generation of reactive oxygen species (ROS), such as hydrogen peroxide (H2O2) and induced cellular oxidative injury caused by lipid peroxidation. In parallel, Cu induced a change in the composition of fatty acids, resulting in lower unsaturated fatty acid levels and increased saturated fatty acids (increased saturation/unsaturation ratio for both genotypes). Treating the flax plants with irrigation three times with Si protected the plants from Cu toxicity. Si treatment decreased the uptake and the transport of Cu to the shoots and harvested seeds and promoted plant growth, yield attributes, and antioxidant defense systems by reducing Cu accumulation, lipid peroxidation, and the generation of H2O2. In addition, the alleviation of Cu toxicity correlated with increased Si accumulation in the roots and shoots. In conclusion, Si can be used to improve the resistance of flax plants to Cu toxicity by up-regulating the antioxidant defense system such as superoxide dismutase (SOD), peroxidase (POD), ascorbate peroxidase (APX) and catalase (CAT) and decreasing the oxidative damage caused by reactive oxygen species (ROS).

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44

Rao, Peddada S., I. M. Robertson, and H. K. Birnbaum. "Effects of thermal cycling in a reducing atmosphere on metal/polyimide interfaces." Journal of Materials Research 9, no. 2 (February 1994): 504–14. http://dx.doi.org/10.1557/jmr.1994.0504.

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Effects of thermal cycling in a reducing (deuterium) atmosphere on the structure and chemistry of Cr/Cu/Cr/polyimide (PI)/Si and Au/Cu/Ti/polyimide (PI)/Si multilayer systems have been studied. In the Cr/PI system the interface between the Cr and PI was sharp and distinct in the as-deposited state, and after the anneal in the reducing atmosphere. Tensile cracks through the Cr/Cu/Cr layers were found after annealing and are the result of thermal stresses. No evidence for significant diffusion of Cr into the PI was found. In the Ti/PI system, the interface between the Ti and PI was sharp in the as-deposited state. After annealing in vacuum and in the reducing environment, regions of the interface between the Ti layer and the PI were converted to an oxide, Ti5O9. Annealing in the deuterium environment also caused delamination of the Ti film from the PI and blistering of the metal in the sample interior. No significant diffusion of the Ti into the PI was detected. In both systems, the metal in contact with the PI acted as a barrier to the diffusion of Cu into the PI.

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45

Wang, Xiupeng, Ayako Oyane, Tomoya Inose, and Maki Nakamura. "In Situ Synthesis of a Tumor-Microenvironment-Responsive Chemotherapy Drug." Pharmaceutics 15, no. 4 (April 21, 2023): 1316. http://dx.doi.org/10.3390/pharmaceutics15041316.

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Current chemotherapy still suffers from unsatisfactory therapeutic efficacy, multi-drug resistance, and severe adverse effects, thus necessitating the development of techniques to confine chemotherapy drugs in the tumor microenvironment. Herein, we fabricated nanospheres of mesoporous silica (MS) doped with Cu (MS-Cu) and polyethylene glycol (PEG)-coated MS-Cu (PEG-MS-Cu) as exogenous copper supply systems to tumors. The synthesized MS-Cu nanospheres showed diameters of 30–150 nm with Cu/Si molar ratios of 0.041–0.069. Only disulfiram (DSF) and only MS-Cu nanospheres showed little cytotoxicity in vitro, whereas the combination of DSF and MS-Cu nanospheres showed significant cytotoxicity against MOC1 and MOC2 cells at concentrations of 0.2–1 μg/mL. Oral DSF administration in combination with MS-Cu nanospheres intratumoral or PEG-MS-Cu nanospheres intravenous administration showed significant antitumor efficacy against MOC2 cells in vivo. In contrast to traditional drug delivery systems, we herein propose a system for the in situ synthesis of chemotherapy drugs by converting nontoxic substances into antitumor chemotherapy drugs in a specific tumor microenvironment.

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46

Horng, Ray-Hua, Hsiao-Yun Yeh, and Niall Tumilty. "Thermal Performance of Cu Electroplated GaN/AlGaN High-Electron-Mobility Transistors with Various-Thickness Si Substrates." Electronics 12, no. 9 (April 27, 2023): 2033. http://dx.doi.org/10.3390/electronics12092033.

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Thermal dissipation is an important issue for power devices. In this work, the impact of thermal effects on the performance of Cu electroplated GaN-based high-electron-mobility transistors (HEMTs) are considered. Electrical, thermometry and micro-Raman characterization techniques were used to correlate the effects of improved heat dissipation on device performance for GaN HEMTs with different thicknesses of Si substrate (50, 100, 150 μm), with and without an additional electroplated Cu layer. GaN HEMTs on electroplated Cu on Si (≤50 μm) demonstrate an enhanced on/off current ratio compared to bare Si substrate by a factor of ~400 (from 9.61 × 105 to 4.03 × 108). Of particular importance, surface temperature measurements reveal a much lower channel temperature for thinner HEMT devices with electroplated Cu samples compared to those without.

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47

Takeyama, Mayumi, Atsushi Noya, and Tomoyuki Fukuda. "Thermal stability of Cu/W/Si contact systems using layers of Cu(111) and W(110) preferred orientations." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 15, no. 2 (March 1997): 415–20. http://dx.doi.org/10.1116/1.580500.

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48

Reid, J. S., E. Kolawa, and M.-A. Nicolet. "Thermodynamics of (Cr, Mo, Nb, Ta, V, or W)–Si–Cu ternary systems." Journal of Materials Research 7, no. 9 (September 1992): 2424–28. http://dx.doi.org/10.1557/jmr.1992.2424.

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The room-temperature and 700 °C tie lines of the early transition metal–Si–Cu ternary systems have been calculated for the metals Cr, Mo, Nb, Ta, V, and W. The tie lines are determined by considering only binary and elemental phases in observance of strict stoichiometry and zero solid solubility. We find that copper is stable with the majority of transition metal silicides under consideration at 700 °C. The result is relevant to the design of stable copper metallizations for silicon.

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Leroux, V., J. C. Labbe, T. T. Nguyen, and M. E. R. Shanahan. "Wettability of non-reactive Cu/Si–Al–O–N systems I. Experimental results." Journal of the European Ceramic Society 21, no. 6 (June 2001): 825–31. http://dx.doi.org/10.1016/s0955-2219(00)00203-x.

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Takeyama, Mayumi B., Takaomi Itoi, Eiji Aoyagi, and Atsushi Noya. "Diffusion barrier properties of nano-crystalline TiZrN films in Cu/Si contact systems." Applied Surface Science 216, no. 1-4 (June 2003): 181–86. http://dx.doi.org/10.1016/s0169-4332(03)00447-1.

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