Relevant bibliographies by topics / Cu-Al Thin Film

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  2. Dissertations / Theses
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Academic literature on the topic 'Cu-Al Thin Film'

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Published: 6 September 2023

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Journal articles on the topic "Cu-Al Thin Film"

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Hung, Fei Shuo, Fei Yi Hung, Che Ming Chiang, and Truan Sheng Lui. "Innovation and Annealed Effect of Sn-Al and Sn-Cu Composite Thin Films on the Electromagnetic Interference Shielding for the Green Materials." Advanced Materials Research 347-353 (October 2011): 547–54. http://dx.doi.org/10.4028/www.scientific.net/amr.347-353.547.

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Sn, Al and Cu not only possess electromagnetic interference shield efficiency, but also have the acceptable costs. In this study, sputtered Sn-Al thin films and Sn-Cu thin film were used to investigate the effect of the crystallization mechanism and film thickness on the electromagnetic interference (EMI) characteristics. In addition, the annealed microstructure, electrical conductivity and EMI of the Sn-xAl films and the Sn-xCu films were compared. The results show that Sn-Al film increased the electromagnetic interference (EMI) shielding after annealed. Sn-Cu films with higher Cu atomic concentration, the low frequency EMI shielding could not be improved. After annealing, the Sn-Cu thin film with lower Cu content possessed excellent EMI shielding at lower frequencies, but had an inverse tendency at higher frequencies.
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Yue, An Na, Kun Peng, Ling Ping Zhou, Jia Jun Zhu, and De Yi Li. "Influence of Ti Layer on the Structure and Properties of Al/Cu Thin Film." Advanced Materials Research 750-752 (August 2013): 1879–82. http://dx.doi.org/10.4028/www.scientific.net/amr.750-752.1879.

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Titanium and aluminum films were deposited on oxygen-free copper substrates by electron beam evaporation method to obtain Al/Cu and Al/Ti/Cu layer composites. Evolution of microstructure and properties of Al/Cu and Al/Ti/Cu thin film during heat treatment processes were investigated by XRD, SEM and electrical properties analysis. The introduce of Ti layer can prevent the formation of Cu-Al intermetallic compounds, and has no obvious influence on the electrical resistivity of Al/Cu thin film, which can be used as a pad in microelectronic package and devices.
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Rose, J. H., J. R. Lloyd, A. Shepela, and N. Riel. "Microstructure of Al-Cu thin-film interconnect." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 820–21. http://dx.doi.org/10.1017/s0424820100088415.

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The precipitate structure of bulk aluminum alloys was heavily studied with x-ray diffraction commencing in the 1930s and via direct observation with the development of transmission electron microscopy (TEM) techniques in the 1950s. In 1970, recognition of the electromigration performance benefits of Cu additions to Al interconnect in integrated circuit devices precipitated studies on Al-Cu thin films. However, the microstructure of these films remains only partially known, in part due to the many process and interconnect geometry variables. In particular, there has been minimal attempt to study films which mimic as closely as possible the environment and thermal history of real interconnect (prior studies typically have examined unpatterned or unpassivated films.) In the present work, Al-Cu films in standard life test devices have been studied. This work is directed at understanding the evolution of microstructure during device processing and life testing and application of this knowledge to a better understanding of the role of microstructure in electromigration in Al-Cu interconnect. The present contribution describes initial microstructural observations on a variety of annealed samples.
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Afifah, Faras, Arif Tjahjono, Aga Ridhova, Pramitha Yuniar Diah Maulida, Alfian Noviyanto, and Didik Aryanto. "Influence of Al and Cu Doping on the Structure, Morphology, and Optical Properties of ZnO Thin Film." Indonesian Journal of Chemistry 23, no. 1 (January 19, 2023): 44. http://dx.doi.org/10.22146/ijc.73234.

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In this study, ZnO thin films doped with Al (AZO) and Cu (CZO) were fabricated on a glass substrate via sol-gel spin coating. The influence of 1 atomic % Al and Cu doping on the structure, morphology, as well as optical properties of ZnO thin film was then analyzed with X-ray diffraction (XRD), atomic force microscopy (AFM), and UV-Vis spectroscopy. XRD analysis revealed that all samples possessed hexagonal wurtzite crystal structures with 3 to 4 preferred orientations. Al and Cu doping caused a decrease in crystal size, while the lattice strain (e) and dislocation density (ρ) were increased. AFM indicated that Al and Cu doping reduced the surface roughness of the ZnO thin film. Optical measurement showed that all samples exhibited high transmittance (> 80%) in the visible light region. Transmittance was reduced after doping, while the band gaps for ZnO, AZO, and CZO thin films are 3.26, 3.28, and 3.23 eV. This study showed that an addition of 1 atomic % transition metal (Al and Cu) greatly influences the structure, morphology, and optical properties of ZnO thin film.
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Lucadamo, G., K. Barmak, and K. P. Rodbell. "Texture in Ti/Al and Nb/Al multilayer thin films: Role of Cu." Journal of Materials Research 16, no. 5 (May 2001): 1449–59. http://dx.doi.org/10.1557/jmr.2001.0202.

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Fiber texture in Ti/Al and Nb/Al polycrystalline multilayer thin films, with bilayer thicknesses (Λ) ranging from 20–333 nm and having a fixed stoichiometry of 1/3, has been investigated by using x-ray pole figures and transmission electron microscopy. Two sets of films were deposited; one set contained pure Al and the other Al–1.0 wt% Cu. The results indicated that texture was strengthened by the formation of a coherent superlattice for the Nb/pure-Al film with the smallest bilayer thickness. By contrast, the texture in Ti/pure-Al films with a similar period was not as strong. The texture also decreased with increasing Λ for both the Ti/pure-Al and Nb/pure-Al films. An increase in the width of the Al (111) peak and an offset of the fiber axis from the substrate normal of 5–8° was observed in the Λ = 333 nm films prepared by using Al–1.0 wt% Cu. The decrease in texture on addition of Cu to Al was attributed primarily to an increase in interlayer roughness as a consequence of reduction in the Al(Cu) grain size. These observations were interpreted in the context of structure zone and dynamic roughness models of film growth.
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Sato, Yuichi, Toshifumi Suzuki, Hiroyuki Mogami, Fumito Otake, Hirotoshi Hatori, and Suguru Igarashi. "Solid Phase Growth of some Metal and Metal Oxide Thin Films on Sapphire and Quartz Glass Substrates." Materials Science Forum 753 (March 2013): 505–9. http://dx.doi.org/10.4028/www.scientific.net/msf.753.505.

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Solid phase growth of thin films of copper (Cu), aluminum (Al) and zinc oxide (ZnO) on single crystalline sapphire and quartz glass substrates were tried by heat-treatments and their crystallization conditions were investigated. ZnO thin films relatively easily recrystallized even when they were deposited on the amorphous quartz glass substrate. On the other hand, Cu and Al thin films hardly recrystallized when they were deposited on the quartz glass substrate. The metal thin films could be recrystallized at only extremely narrow windows of the heat-treatment conditions when they were deposited on the single crystalline sapphire substrate. The window of the solid phase heteroepitaxial growth condition of the Al film was wider than that of the Cu film.
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Ryabtsev, S. I., O. V. Sukhova, and V. A. Polonskyy. "Structure and corrosion in NaCl solution of quasicrystalline Al–Cu–Fe cast alloys and thin films." Journal of Physics and Electronics 27, no. 1 (October 17, 2019): 27–30. http://dx.doi.org/10.15421/331904.

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For the first time, quasicrystalline Al60Cu28Fe12 films with 260 nm thickness cooled at 1012–1014 K/s were produced by the modernized method of three-electrode ion-plasma sputtering. Films were deposited on NaCl substrate. The structure of as-sputtered films was investigated in comparison with that of as-cast specimens by methods of quantitative metallography, X-ray analysis, and scanning electron microscopy. Corrosion behavior in 5% NaCl aqueous solution was studied by potentiodynamic method and model tests. In the structure of the as-cast Al–Cu–Fe alloy, the quasicrystalline icosahedral i-phase was established to co-exist with λ -Al13Fe4 , τ-AlCu(Fe), η-AlCu, and θ-Al2Cu crystalline phases and occupy ~56 % of the alloy volume. The Al–Cu–Fe film contains dispersive quasicrystalline i-phase (~3 nm in size) that is stable up to 723 К. Corrosion of the as-sputtered Al–Cu–Fe film runs at the lower rate as compared with that of the as-cast alloy of the same composition. Model corrosion tests for 1, 2, 3, 4, 8 days with 5% NaCl solution at 293 K indicate that the investigated Al–Cu–Fe film remains virtually untouched by corrosion. No marks of pittings typical for as-cast Al–Cu–Fe alloys are observed on the film surface affected by saline solution.
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Palmstro/m, C. J., J. W. Mayer, B. Cunningham, D. R. Campbell, and P. A. Totta. "Thin film interactions of Al and Al(Cu) on TiW." Journal of Applied Physics 58, no. 9 (November 1985): 3444–48. http://dx.doi.org/10.1063/1.335765.

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Eriksson, Fredrik, Simon Olsson, Magnus Garbrecht, Jens Birch, and Lars Hultman. "Phase Evolution of Al/Cu/Co Thin Films into Decagonal Quasicrystalline Phases." Acta Crystallographica Section A Foundations and Advances 70, a1 (August 5, 2014): C82. http://dx.doi.org/10.1107/s2053273314099173.

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Quasicrystals have drawn increased scientific attention during the past decade not only for the purpose of fundamental research, but also due to their possible applications as bulk materials or thin films [1]. In particular, decagonal (d) quasicrystals could be very attractive because of their anisotropic structure being quasiperiodic in two dimensions and periodic in the third. Recently it has been shown that icosahedral quasicrystalline Al-Cu-Fe and approximant Al-Si-Cu-Fe thin films can be prepared by annealing a multilayer thin film on a sapphire or Si substrate, respectively [2]. In this work, multilayered Al/Cu/Co thin films have been deposited by magnetron sputtering onto Al2O3 (0001) and Si (001) substrates. The multilayers were produced with a multilayer period of 100 nm, repeated 3 times to a total thickness of 300 nm. The Al:Cu:Co layer thickness ratios were adjusted to obtain films with global compositions around the ideal decagonal quasicrystalline phase d-Al65Cu17.5Co17.5. The phase evolution during annealing, and the concurrent changes in film microstructure and crystal quality was investigated. The decagonal d-Al-Cu-Co and d-Al-Cu-Co-Si phases were both found by X-ray diffraction, electron diffraction, and high-resolution (scanning) electron microscopy to form at 5000C on Al2O3 and Si, respectively, and at 6000C these were the only phases present. Figure 1 shows the HRTEM micrograph of the Al-Cu-Co-Si phase after annealing to 7000C. At increasing temperatures, the quasicrystal grains grew larger in size, up to 500 nm, and the Al-Cu-Co obtained a preferred orientation with the 10-fold periodic axis aligned with the Al2O3 substrate normal. The d-Al-Cu-Co phase persisted to more than 8500C, with a complete 00001-texturing, while the d-Al-Cu-Co-Si phase was replaced by other crystalline phases at 8000C. The d-Al-Cu-Co-Si phase was also observed to grow into the Si substrate by a solid-state diffusion reaction.
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WANG, YUE, HAO GONG, and LING LIU. "CRYSTAL STRUCTURE AND PROPERTIES OF CU-AL-O THIN FILMS." International Journal of Modern Physics B 16, no. 01n02 (January 20, 2002): 308–13. http://dx.doi.org/10.1142/s0217979202009809.

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P-type transparent conducting oxide thin films have attracted much attention due to their potential applications in novel transparent p-n junction devices. In this work, the transparent conducting Cu-Al-O thin films were prepared by the plasma enhanced chemical vapor deposition using metal organic precursors of Cu(acac) 2 and Al(acac) 3 (acac=acetylacetonate) while the substrate temperature was varied from 700 to 800°C. The x-ray diffraction and SEM results are analyzed to investigate the structure of the as-deposited and annealed films. The films contain metal copper and small grains of CuAlO 2. After annealing, metal copper turned into CuO . Hall effect measurements reveal that these films are p-type semiconductors and the film conductivity increased with the growth temperature.
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Dissertations / Theses on the topic "Cu-Al Thin Film"

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Birkett, Martin. "Optimisation of the performance characteristics of Cu-Al-Mo thin film resistors." Thesis, Northumbria University, 2009. http://nrl.northumbria.ac.uk/2013/.

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This thesis presents a novel approach to the manufacture of thin film resistors using a new low resistivity material of copper, aluminium and molybdenum, which under industrially achievable optimised process conditions, is shown to be capable of producing excellent temperature coefficient of resistance (TCR) and long term stability properties. Previous developments in the field of thin film resistors have mainly centred around the well established resistive materials such as nickel-chromium, tantalum-nitride and chromium-silicon-monoxide. However recent market demands for lower value resistors have been difficult to satisfy with these materials due to their inherent high resistivity properties. This work focuses on the development and processing of a thin film resistor material system having lower resistivity and equal performance characteristics to that of the well established materials. An in depth review of thin film resistor materials and manufacturing processes was undertaken before the electrical properties of a binary thin film system of copper and aluminium were assessed. These properties were further enhanced through the incorporation of a third doping element, molybdenum, which was used to reduce the TCR and improve the electrical stability of the film. Once the desired chemical composition was established, the performance of the film was then fine tuned through optimisation of critical manufacturing process stages such as sputter deposition, heat treatment and laser adjustment. The results of these investigations were then analysed and used to generate a set of optimum process conditions, suitable for repeatedly producing thin film resistors in the 1 to 10Ω resistance range, to tolerances of less than ±0.25% and TCR values better than ±15ppm/oC.
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Weaver, David John. "A study of graphoepitaxially grown Al and Cu interconnects." Thesis, University of York, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.265566.

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Haidara, Fanta. "Etude des mécanismes de formation de phases dans des films minces du système ternaire Al-Cu-Fe." Thesis, Aix-Marseille 3, 2011. http://www.theses.fr/2011AIX30008.

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Les mécanismes de formation de phases dans des films minces du système ternaire Al-Cu-Fe et des systèmes binaires Al-Cu, Al-Fe et Cu-Fe ont été étudiés. Dans chacun des systèmes, plusieurs échantillons avec des compositions distinctes ont été préparés par pulvérisation cathodique. Des couches d’aluminium, de cuivre et de fer ont été déposées séquentiellement sur des substrats de silicium oxydé et ont été traités thermiquement par différentes méthodes puis caractérisés. Des mesures de diffraction de rayons X et de résistivité in-situ ont été effectuées pour suivre la formation des phases. Des recuits thermiques suivis de trempe ont été réalisés et les échantillons ont été caractérisés par diffraction des rayons X. L’analyse enthalpique différentielle a également été utilisée ainsi que des mesures simultanées in-situ de résistivité et de diffraction des rayons X. L’ensemble des résultats obtenus nous a permis de proposer des mécanismes de formation de phases pour chacun des échantillons étudiés et en utilisant des modèles théoriques de croissance de phases nous avons pu déterminer des données cinétiques sur la formation de phases dans ces films
The mechanisms of phase formation in thin films have been studied in the Al-Cu, Al-Fe, Fe-Cu and Al-Cu-Fe systems. Several samples with different compositions have been prepared by sputtering. Aluminium, copper and iron layers were deposited onto oxidized silicon substrates, they were heat treated and characterized by using several techniques. In situ X-ray diffraction and resistivity measurements were used to follow the phase formation. Thermal annealings followed by quenching have also been carried out to get additional information.Differential Scanning Calorimetry and coupled in-situ resistivity and X-ray diffractionmeasurements were performed. The whole results allowed us to suggest a mechanism of phase formation for each sample and by using theoretical models of growth we determined kinetic data on the phase formation
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Burger, Sofie [Verfasser]. "High Cycle Fatigue of Al and Cu Thin Films by a Novel High-Throughput Method / Sofie Burger." Karlsruhe : KIT Scientific Publishing, 2013. http://www.ksp.kit.edu.

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Aninat, Rémi. "Study of Cu(In,Al)Se2 thin films prepared by selenisation of sputtered metallic precursors for application in solar cells." Thesis, Northumbria University, 2012. http://nrl.northumbria.ac.uk/11373/.

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Cu-In, Cu-Al and Cu-In-Al metallic precursor layers were deposited using radio-frequency magnetron sputtering and selenised to produce thin films of CuInSe2 (CIS), CuAlSe2 (CAS) and CuIn1-xAlxSe2 (CIAS), respectively. The selenisation stage of this 2-stage process was carried out in a tube furnace (TF) or a rapid thermal processor (RTP) in the presence of elemental Se, either deposited on top of the precursor film or provided from an external source in the chamber, in order to fabricate the chalcopyrite material. The aim was to produce single phase, device quality CIS, CAS and CIAS for use as an absorber layer material in thin film photovoltaic solar cells. Profilometry performed on the as-deposited Cu-In-Al metallic precursors showed an important increase in surface roughness compared to the Cu-In and Cu-Al precursors. This was found to be due to the preferential formation of Cu9(In,Al)4, which stoichiometry led the excess In to form island-shaped In phases at the surface of the bulk, while only Cu2In and CuIn2 formed in Cu-In precursors. Regarding the selenisation, temperatures ranging from 250°C to 550°C were used, and the resulting samples were investigated using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), secondary ion mass spectroscopy (SIMS) and glow-discharge optical emission spectroscopy (GD-OES). Thin films of single phase CIS and CAS were successfully produced with energy band gaps of 0.99 eV and 2.68 eV, respectively. However the incorporation of Al proved to be difficult. The results showed that no incorporation of the Al into the chalcopyrite lattice was achieved in the samples selenised in the RTP, which was believed to be due to the oxidation of the element Al into amorphous Al2O3. In the tube furnace, possibly due to lower levels of oxidation, incorporation occurred more readily but Al and In segregated towards the back and front of the layer, respectively. The causes of the segregation were studied and solutions to avoid it developed, resulting under certain conditions in successful production of CuIn1-xAlxSe2. Samples were tested in a photoelectrochemical cell and showed (apparent) external quantum efficiency values comparable to a CuInSe2 (CIS) sample used as a standard.
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Jeliazova, Yanka Martcheva. "The growth of multilayer systems, consisting of thin oxidic (Ga2O3, Al2O3) and metallic (Ga, Al, Co, Au) films on Ni(100) and Cu(111) surfaces." [S.l. : s.n.], 2002. http://deposit.ddb.de/cgi-bin/dokserv?idn=96635611X.

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Ross, Nick. "Interfacial Electrochemistry of Cu/Al Alloys for IC Packaging and Chemical Bonding Characterization of Boron Doped Hydrogenated Amorphous Silicon Films for Infrared Cameras." Thesis, University of North Texas, 2016. https://digital.library.unt.edu/ark:/67531/metadc849696/.

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We focused on a non-cooling room temperature microbolometer infrared imaging array device which includes a sensing layer of p-type a-Si:H component layers doped with boron. Boron incorporation and bonding configuration were investigated for a-Si:H films grown by plasma enhanced chemical deposition (PECVD) at varying substrate temperatures, hydrogen dilution of the silane precursor, and dopant to silane ratio using multiple internal reflection infrared spectroscopy (MIR-IR). This study was then confirmed from collaborators via Raman spectroscopy. MIR-IR analyses reveal an interesting counter-balance relationship between boron-doping and hydrogen-dilution growth parameters in PECVD-grown a-Si:H. Specifically, an increase in the hydrogen dilution ratio (H2/SiH4) or substrate temperature was found to increase organization of the silicon lattice in the amorphous films. It resulted in the decrease of the most stable SiH bonding configuration and thus decrease the organization of the film. The new chemical bonding information of a-Si:H thin film was correlated with the various boron doping mechanisms proposed by theoretical calculations. The study revealed the corrosion morphology progression on aluminum alloy (Al, 0.5% Cu) under acidic chloride solution. This is due to defects and a higher copper content at the grain boundary. Direct galvanic current measurement, linear sweep voltammetry (LSV), and Tafel plots are used to measure corrosion current and potential. Hydrogen gas evolution was also observed (for the first time) in Cu/Al bimetallic interface in areas of active corrosion. Mechanistic insight that leads to effective prevention of aluminum bond pad corrosion is explored and discussed. (Chapter 4) Aluminum bond pad corrosion activity and mechanistic insight at a Cu/Al bimetallic interface typically used in microelectronic packages for automotive applications were investigated by means of optical and scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and electrochemistry. Screening of corrosion variables (temperature, moisture, chloride ion concentration, pH) have been investigated to find their effect on corrosion rate and to better understand the Al/Cu bimetallic corrosion mechanism. The study revealed the corrosion morphology progression on aluminum alloy (Al, 0.5% Cu) under acidic chloride solution. The corrosion starts as surface roughening which evolves into a dendrite structure and later continues to grow into a mud-crack type corrosion. SEM showed the early stage of corrosion with dendritic formation usually occurs at the grain boundary. This is due to defects and a higher copper content at the grain boundary. The impact of copper bimetallic contact on aluminum corrosion was explored by sputtering copper microdots on aluminum substrate. Copper micropattern screening revealed that the corrosion is activated on the Al/Cu interface area and driven by the large potential difference; it was also seen to proceed at much higher rates than those observed with bare aluminum. Direct galvanic current measurement, linear sweep voltammetry (LSV), and Tafel plots are used to measure corrosion current and potential. Hydrogen gas evolution was also observed (for the first time) in Cu/Al bimetallic interface in areas of active corrosion. Mechanistic insight that leads to effective prevention of aluminum bond pad corrosion is explored and discussed. Micropattern corrosion screening identified hydrogen evolution and bimetallic interface as the root cause of Al pad corrosion that leads to Cu ball lift-off, a fatal defect, in Cu wire bonded device. Complete corrosion inhibition can be achieved by strategically disabling the mutually coupled cathodic and anodic reaction cycles.
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Wu, Wei-Jung, and 巫偉融. "Preparation and characterization of Cu(In,Al)Se2 thin film." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/72348410582631819120.

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碩士
國立中山大學
材料與光電科學學系研究所
98
Polycrystalline Cu(In,Al)Se2 films were deposited by four-source evaporation of Cu, In, Al, and Se using Knudsen type sources in which the elemental fluxes were coincident onto soda lime glass substrates. The single-phase films with composition of Cu:In:Al:Se = 28:15:9:48 which were confirmed by X-ray diffraction and micro-Raman spectroscopy were deposited at substrate temperature of 560℃. Secondary phases were observed when temperature of substrate is below 560℃ due to incompletely reaction. Under fixed effusion flux, the value of Cu/(In+Al) becomes larger as temperature of substrate increase. However, the value of Al/(In+Al) keeps nearly constant as temperature increase. The band gap is 1.53 eV derived from the result of spectrophotometer. The room temperature resistivity, Hall mobility and carrier concentration of the films are 0.28 Ωcm, 24.63 cm2V-1s-1 and 1.27x1019 cm-3 respectively. And the conductive type is p-type. By the way, we try to grow Cu(In,Al)Se2 film in the presence of an Sb beam at substrate temperature of 440℃. After the addition of an Sb beam, surface morphology become smooth and compact, but there is no significant grain growth. No matter an Sb beam adds or not, secondary phases were observed in both case due to the low temperature of substrate.
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Tien, Hung-Chi, and 田宏吉. "Improvement of Against Oxidation and Electrical Properties of Passivated Cu(Al) Thin Film." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/t78j23.

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碩士
國立虎尾科技大學
材料科學與綠色能源工程研究所
98
In this study, the characteristics of Cu(Al) alloy thin films and its applications as the materials of interconnect were investigation. Copper has much lower electrical resistivity and higher electron migration (EM) resistance than that of aluminum. The copper suffers from poor adhesion with glass substrated and self-passivation layer after anneal. This work aims at preparing a low resistivity, high adhesion, oxidation resistance and self-passivated Cu(Al) alloy thin film, which will be potentially as gate material on TFT-LCD and interconnection on microelectronics. Cu1-xAlx (x = 1.75-7.50 at.%) films were prepared by a co-sputtering method and were subsequently annealed by a RTA in a temperature range of 200°C - 600°C for 10-30 min in oxygen ambient. Self-passivated Cu thin film in the form of Al2O3/Cu/SiO2 was therefore obtained because Al diffused easily from matrix to the surface and reacted with oxygen by forming, thus oxidation of copper film can be prevented. The formation of Al2O3/Cu/SiO2 improved the resistivity, adhesion to SiO2, oxidation resistance and passivative behavior of the studied film. The Cu (1.75 at.% Al) thin film had the lowest resistivity of 3.04 μΩcm, and exhibited a superior passivated behavior among the studied films.
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Kuo-ChanHuang and 黃國展. "Investigation of Cu(In,Al)Se2 thin film solar cell fabricated by using electrodeposition technique." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/y5vw25.

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博士
國立成功大學
微電子工程研究所
103
In this dissertation, we exploit the low cost electrodepositon technique to investigate the fabrication of Cu(In,Al)Se2 thin film solar cell. The research content is divided into four segments. In the first segment, the cyclic voltammetric studies are used to realize the element’s and compounds reduction potentials and identify a suitable potential as co-electrodeposition. In combination with the XRD analysis, chemical reaction mechanism for presuming the formation routes of quaternary Cu(In,Al)Se2 films are defined. Furthermore, It is found that the SDS additive promotes the deposited potential of each element closing to each other for a better co-elecorodeposition environment, and simultaneously change the nucleation mechanism of Cu(In,Al)Se2 films from instantaneous nucleation to progressive nucleation. This feature is helpful to obtain a smooth precursor Cu(In,Al)Se2film and round-like structure. In addition, we find the stoichiometry of Cu(In,Al)Se2 film changes from Cu-rich to Cu-poor type and the morphology of Cu(In,Al)Se2 film transfers from round-like structure to cauliflower-like structure by increasing deposited potential. In the second segment, we focus on the adjustment of stoichiometry and optical energy band gap of Cu(In,Al)Se2 films. By adjusting the Al and In concentration is solutions, the ratio of Al to (Al+In) in Cu(In,Al)Se2 films can be successfully controlled from 0.21 to 0.42, and the corresponding optical energy band gap of Cu(In,Al)Se2 films can be varied from1.17 eV to 1.48 eV to match with optimum band gap value for the solar spectrum. Furthermore, X-ray diffraction (XRD) patterns reveal three preferred growth orientations along the (112), (204/220), and (116/312) planes for all species. In the third segment, we focus on the surface morphology of Cu(In,Al)Se2 films and the relationship between precursor Cu(In,Al)Se2 films and post-annealed Cu(In,Al)Se2 films. The nucleation mechanism of electrodeposited Cu(In,Al)Se2 films change from instantaneous nucleation to progressive nucleation is observed by increasing the copper concentration. The research results exhibit that precursor Cu(In,Al)Se2 films had roughly cauliflower-like and triangular structures with Cu-poor composition at instantaneous nucleation mechanism, whereas smooth and round structures with Cu-rich composition at progressive nucleation mechanism. After post-annealing treatment, the surface morphology of Cu-rich Cu(In,Al)Se2 films shows high quality with compact structures and large grains, that is more beneficial to be the absorber layer of solar cell. A 1.96% efficient Cu(In,Al)Se2 thin film solar cell fabricated by electrodeposition technique is first time achieved and publish in international journal. The corresponding values of open-circuit voltage (Voc), short-circuit current (Jsc), fill factor (FF), Rsh and Rs are 0.189 V, 29.21 mA/cm2, 35.4%, 125Ω and 2.82Ω, respectively. In the fourth segment, the binary structure precursor Cu(In,Al)Se2 films are utilized to improve the surface morphology and of Cu(In,Al)Se2 films and investigate the characteristics of CdS and Cu(In,Al)Se2 interface. It is found that the upper Cu–Se compounds in binary structure can form a liquid phases during the post-annealing process, which enhances elemental migration and promotion of large grains and smooth surface formation and reduction of RMS roughness less than 100 nm. The subsequently deposition of CdS film on binary structure Cu(In,Al)Se2 films exhibit good spreadability and smoothness, leading to efficiently diminish the distribution of leakage current paths. The dark current–voltage characteristics of the CdS/CIAS heterojuncions shows that the reverse dark current density is decreased by approximately one order of magnitude from 4.02 x 10-4 A/cm2 (single structure) to 4.26 x 10-5 A/cm2 (binary structure). Furthermore, the conversion efficiency of CIAS solar cells is enhanced from 0.52 % (single structure) to 1.44 % (binary structure) with increase in Voc and Jsc.
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Books on the topic "Cu-Al Thin Film"

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Burger, Sofie. High Cycle Fatigue of Al and Cu Thin Films by a Novel High-Throughput Method. KIT Scientific Publishing, 2013.

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Book chapters on the topic "Cu-Al Thin Film"

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Jeon, Insu, Masaki Omiya, Hirotsugu Inoue, Kikuo Kishimoto, and Tadashi Asahina. "A New Specimen for Measuring the Interfacial Toughness of Al-0.5%Cu Thin Film on Si Substrate." In Key Engineering Materials, 521–26. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-978-4.521.

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Yu, Jun Young, and Youngman Kim. "The In-situ Intrinsic Stress Measurements of Cu and Al Thin Films." In Supplemental Proceedings, 281–88. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2012. http://dx.doi.org/10.1002/9781118356074.ch37.

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Li, You Zhen, and Ji Cheng Zhou. "Fabrication of Ta-Al-N Thin Films and its Cu Diffusion on Barrier Properties." In Advanced Materials Research, 593–96. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-463-4.593.

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Munir, Badrul, Rachmat Adhi Wibowo, Eun Soo Lee, and Kyoo Ho Kim. "Growth of Cu(In1-xAlx)Se2 Thin Films by Atmospheric Pressure Selenization of Sputtered Precursors." In Solid State Phenomena, 931–34. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-31-0.931.

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Munir, Badrul, Rachmat Adhi Wibowo, and Kyoo Ho Kim. "Synthesis of Cu(In0.75Al0.25)Se2 Thin Films from Binary Selenides Powder Compacted Targets by Sputtering and Selenization." In Solid State Phenomena, 99–102. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/3-908451-48-5.99.

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BROTZEN, F. R., C. T. ROSENMAYER, and R. J. GALE. "MECHANICAL BEHAVIOR OF ALUMINUM AND Al–Cu(2%) THIN FILMS." In Metallurgical Coatings 1988, 291–98. Elsevier, 1988. http://dx.doi.org/10.1016/b978-1-85166-985-1.50034-0.

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Idrac, Jonathan, Peter Skeldon, Yanwen Liu, Teruo Hashimoto, Georges Mankowski, George Thompson, and Christine Blanc. "Morphology, composition and structure of anodic films on binary Al-Cu alloys." In Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers, 167–72. Elsevier, 2006. http://dx.doi.org/10.1016/b978-044452224-5/50028-7.

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Conference papers on the topic "Cu-Al Thin Film"

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Shi, Gang, Zhen Sun, Geng-Fu Xu, Yun-Hao Min, Jun-Yi Luo, Yong Lu, Bing-Zong Li, et al. "Electromigration performance improvement of Al-Si-Cu/TiN/Ti/n+Si contact." In Third International Conference on Thin Film Physics and Applications, edited by Shixun Zhou, Yongling Wang, Yi-Xin Chen, and Shuzheng Mao. SPIE, 1998. http://dx.doi.org/10.1117/12.300685.

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Hu, C. K., D. C. Edelstein, C. Uzoh, and T. Sullivan. "Comparison of electromigration in submicron Al(Cu) and Cu thin film lines." In Third international stress workshop on stress-induced phenomena in metallization. AIP, 1996. http://dx.doi.org/10.1063/1.50926.

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Susla, Bronislaw, Eugeniusz Chimczak, Miroslawa Bertrandt-Zytkowiak, and Maciej Kaminski. "Point contact spectroscopy of ZnS:Mn,Cu-Al thin film cells." In International Conference on Solid State Crystals '98, edited by Antoni Rogalski and Jaroslaw Rutkowski. SPIE, 1999. http://dx.doi.org/10.1117/12.344741.

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Oda, Y., R. Hamazaki, S. Fukamizu, A. Yamamoto, T. Minemoto, and H. Takakura. "Cu(In,Al)S2 thin film solar cells prepared from sulfurization of Cu-In-Al precursors." In 2011 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2011. http://dx.doi.org/10.7567/ssdm.2011.l-3-2.

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Zhao, Wen, Yong Wang, Ming Li, and Liming Gao. "Effect of Al-0.5%Cu thin film on reliability of IGBT module." In 2014 Joint IEEE International Symposium on the Applications of Ferroelectrics, International Workshop on Acoustic Transduction Materials and Devices & Workshop on Piezoresponse Force Microscopy (ISAF/IWATMD/PFM). IEEE, 2014. http://dx.doi.org/10.1109/isaf.2014.6918029.

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Zhao, Wen, Yong Wang, Ming Li, and Liming Gao. "Effect of Al-0.5%Cu thin film on reliability of IGBT module." In 2014 15th International Conference on Electronic Packaging Technology (ICEPT). IEEE, 2014. http://dx.doi.org/10.1109/icept.2014.6922820.

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Hasan, Mohd Rezaul, Md Abu Sayeed, and K. M. A. Hussain. "Effect of Aluminium (Al) and Copper (Cu) Doping on Characteristics of Tin Oxide (SnO2) Thin Film." In 2020 IEEE Region 10 Symposium (TENSYMP). IEEE, 2020. http://dx.doi.org/10.1109/tensymp50017.2020.9230800.

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Gao, Yang, Weiming Cheng, Pengfei Zhou, and Songlin Zhuang. "Improving mechanical properties of optical thin films by ion assisted deposition." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/oam.1989.mnn8.

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Abstract:
Several optical coatings were produced by ion assisted deposition (IAD) and their mechanical properties were investigated using four different methods. The experimental results are summarized here: (1) Eleven kinds of film were produced by IAD; they are a seventeen-layer dielectric interference filter of ZnS/MgF2; an antireflection coating of MgF2 on a plastic substrate, some oxide films such as ZrO2, TiO2, and SiO2; some metallic films such as Ag, Al, and Cu; some metal bandpass films for energy efficiency. (2) Compared with those deposited by PVD, all the films by IAD with proper parameters have better mechanical properties, with increased abrasion and corrosion resistance, as well as improved adhesion and security. (3) SEM photographs showed that IAD had effectively reduced the affected width of scratches on the film surface. This means that the mechanical properties and hardness of the films have been improved. (4) With the IAD technique, we can obtain firm and fine films on plastic substrate without heating and it is difficult to obtain them by the PVD technique. (5) The XRD, TEM, and TPDS analyses showed that the reason for improving mechanical properties by IAD is that bombardment particles can increase collecting density, improve microstructure, and facilitate crystallization of coating; and for some films, bombardment with different ions has different effects on the properties of films.
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Kim, Byoung-Joon, Hae-A.-Seul Shin, In-Suk Choi, and Young-Chang Joo. "Electrical Failure and Damage Analysis of Multi-Layer Metal Films on Flexible Substrate during Cyclic Bending Deformation." In ISTFA 2011. ASM International, 2011. http://dx.doi.org/10.31399/asm.cp.istfa2011p0001.

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Abstract The electrical resistance Cu film on flexible substrate was investigated in cyclic bending deformation. The electrical resistance of 1 µm thick Cu film on flexible substrate increased up to 120 % after 500,000 cycles in 1.1 % tensile bending strain. Crack and extrusion were observed due to the fatigue damage of metal film. Low bending strain did not cause any damage on metal film but higher bending strain resulted in severe electrical and mechanical damage. Thinner film showed higher fatigue resistance because of the better mechanical property of thin film. Cu film with NiCr under-layer showed poorer fatigue resistance in tensile bending mode. Ni capping layer did not improve the fatigue resistance of Cu film, but Al capping layer suppressed crack formation and lowered electrical resistance change. The NiCr under layer, Ni capping layer, and Al capping layer effect on electrical resistance change of Cu film was compared with Cu only sample.
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LIU, CHEN, OLIVER NAGLER, FLORIAN TREMMEL, MARIANNE UNTERREITMEIER, JESSICA J. FRICK, and DEBBIE G. SENESKY. "ACOUSTIC EMISSION SIGNAL PROCESSING STUDY OF NANOINDENTATION ON THIN FILM STACK STRUCTURES USING GAUSSIAN MIXTURE MODEL." In Structural Health Monitoring 2021. Destech Publications, Inc., 2022. http://dx.doi.org/10.12783/shm2021/36364.

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This investigation utilizes a material testing system that integrates acoustic emission (AE) testing with a nanoindentation system for crack generation and detection in Al-Cu top thin-film stack structures. The suitability of using the AE method was verified with scanning electron microscope (SEM) images of indent cross-sections. In order to cluster the AE signals based on a different physical meaning, a signal processing approach based on the Gaussian mixture model (GMM) clustering algorithm was applied. Principal component analysis (PCA) and autoencoder feature extraction methods were used to reduce the dimension of the signal. This signal processing approach has the promising ability to distinguish AE events associated with crack formation and metal layer plastic deformation. This integrated test system and signal processing approach provide a high-resolution mechanical testing platform for studying and enabling automatic, non-destructive crack detection in wafer probing.
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