Relevant bibliographies by topics / Crystals – Defects

Academic literature on the topic 'Crystals – Defects'

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Published: 4 June 2021
Last updated: 25 January 2023

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Journal articles on the topic "Crystals – Defects"

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Zhao, Xiaoji, Yanlu Li, and Xian Zhao. "Density Functional Theory Study of the Point Defects on KDP (100) and (101) Surfaces." Molecules 27, no. 24 (December 17, 2022): 9014. http://dx.doi.org/10.3390/molecules27249014.

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Surface defects are usually associated with the formation of other forms of expansion defects in crystals, which have an impact on the crystals’ growth quality and optical properties. Thereby, the structure, stability, and electronic structure of the hydrogen and oxygen vacancy defects (VH and VO) on the (100) and (101) growth surfaces of KDP crystals were studied by using density functional theory. The effects of acidic and alkaline environments on the structure and properties of surface defects were also discussed. It has been found that the considered vacancy defects have different properties on the (100) and (101) surfaces, especially those that have been reported in the bulk KDP crystals. The (100) surface has a strong tolerance for surface VH and VO defects, while the VO defect causes a large lattice relaxation on the (101) surface and introduces a deep defect level in the band gap, which damages the optical properties of KDP crystals. In addition, the results show that the acidic environment is conducive to the repair of the VH defects on the surface and can eliminate the defect states introduced by the surface VO defects, which is conducive to improving the quality of the crystal surface and reducing the defect density. Our study opens up a new way to understand the structure and properties of surface defects in KDP crystals, which are different from the bulk phase, and also provides a theoretical basis for experimentally regulating the surface defects in KDP crystals through an acidic environment.
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Filip, Octavian, Boris M. Epelbaum, Juan Li, Matthias Bickermann, Xian Gang Xu, and Albrecht Winnacker. "Growth on Rhombohedral (01-1n) Plane: An Alternative for Preparation of High Quality Bulk SiC Crystals." Materials Science Forum 600-603 (September 2008): 23–26. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.23.

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Results on bulk growth of SiC crystals along rhombohedral [01-1n] directions are presented. 6H- and 4H-crystals were grown on rhombohedral planes, which make angles of about 45o with the (0001) plane. Etching features on three differently oriented planes cut from characteristic crystals were compared. Utmost care was concentrated on defect development in the case of non-conventional growth orientation using the seed cut from a “standard” (0001) crystal, containing a typical (standard for [0001] growth) set of crystal defects. We clearly distinguished between a transient layer adjacent to the seed and the main crystal body grown at latter stages. The defect selection and/or transformation in the transient layer appeared strongly depending on the SiC polytype and growth direction. This study brings directly the information on stability of particular defects in the chosen crystal orientation and allows us to distinguish between defects characteristic for [0001] and rhombohedral growth.
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Tuomisto, Filip. "Vacancy Defects in Bulk and Quasi-Bulk GaN Crystals." Crystals 12, no. 8 (August 9, 2022): 1112. http://dx.doi.org/10.3390/cryst12081112.

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In-grown vacancy defects in bulk and quasi-bulk GaN crystals have been extensively studied with positron annihilation spectroscopy. High concentrations of Ga-vacancy-related defects are found irrespective of the growth method used in crystals with a high O contamination or intentional O doping, and they act as the dominant compensating native defect for n-type conductivity. Low-temperature crystal growth also leads to high concentrations of Ga-vacancy-related defects. Ga vacancies are present in the crystals as a part of the different types of complexes with O, H, and/or VN, depending on the growth conditions.
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Smirnov, Maxim, Diana Manukovskaya, Nikolay Sidorov, and Mikhail Palatnikov. "Features of the Defect Structure and Luminescence of Nominally Pure Lithium Niobate Crystals Produced Using Different Technologies." Materials 16, no. 1 (December 27, 2022): 255. http://dx.doi.org/10.3390/ma16010255.

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We have established that luminescence in lithium niobate crystals both congruent and near-stoichiometric (R≈1) is due to point defects in the cationic sublattice and intraconfigurational transitions in the oxygen-octahedral NbO6 clusters. We have also determined that the main contribution to the luminescence in the visible and near IR regions is made by luminescence centers with the participation of NbLi defects: the NbLi-NbNb bipolaron pair and the NbLi-O defect in a congruent crystal. The minimum intensity of bipolaron luminescence has been observed in stoichiometric crystals obtained using different technologies. Weak luminescence of the NbLi-NbNb bipolaron pair indicates a small number of NbLi defects in the crystal structure. The number of NbLi defects in the crystal structure indicates a deviation of the crystal composition from stoichiometry.
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Zhang, Hongdan, Ludan Zhu, Jun Cheng, Long Chen, Chuanqi Liu, and Shuanglong Yuan. "Photoluminescence Characteristics of Sn2+ and Ce3+-Doped Cs2SnCl6 Double-Perovskite Crystals." Materials 12, no. 9 (May 8, 2019): 1501. http://dx.doi.org/10.3390/ma12091501.

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In recent years, all-inorganic lead-halide perovskites have received extensive attention due to their many advantages, but their poor stability and high toxicity are two major problems. In this paper, a low toxicity and stable Cs2SnCl6 double perovskite crystals were prepared by aqueous phase precipitation method using SnCl2 as precursor. By the XRD, ICP-AES, XPS, photoluminescence and absorption spectra, the fluorescence decay curve, the structure and photoluminescence characteristics of Ce3+-doped and undoped samples have been investigated in detail. The results show that the photoluminescence originates from defects. [ S n S n 4 + 2 + +VCl] defect complex in the crystal is formed by Sn2+ substituting Sn4+. The number of defects formed by Sn2+ in the crystal decreases with Ce3+ content increases. Within a certain number of defects, the crystal luminescence is enhanced with the number of [ S n S n 4 + 2 + +VCl] decreased. When Ce3+ is incorporated into the crystals, the defects of [ C e 3 + S n 4 + +VCl] and [ S n S n 4 + 2 + +VCl] were formed and the crystal show the strongest emission. This provides a route to enhance the photoluminescence of Cs2SnCl6 double perovskite crystals.
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Pond, R. C. "TEM studies of line defects in interfaces." Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 586–87. http://dx.doi.org/10.1017/s0424820100104996.

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Line defects are ubiquitious features in interfaces, and have important structural and mechanistic role. Recently, a crystallographic theory of such defects has been presented which appears to offer a comprehensive framework for their classification. The object of the present paper is firstly to outline the characterisation and classification of defects according to this treatment. Secondly, we illustrate examples of defects in the distinctive classes observed using tern, and discuss the various imaging techniques which have been employed.In the absence of a rigorous treatment of line defects in single crystals and interfaces, which would require the development of a discrete field theory, approximate methods of defect characterisation are used. The most popular method involves mapping a contour, initially constructed around a defect of interest, into a reference space. For defeats in single crystals this Burgers circuit method, introduced by Frank, is very helpful, but suffers from certain procedural inconveniences in the case of interfacial defects.
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Zhang, Ji Zhong, Wei Qiang Wang, and Na Li. "Self-Organization Behavior of Sub-Micron CdO Grains Grown during Vapour-Solid Transition." Defect and Diffusion Forum 278 (July 2008): 45–54. http://dx.doi.org/10.4028/www.scientific.net/ddf.278.45.

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Various deposits of CdO grains were observed on the surface of N 100 silicon crystals heated at 580 °C and 620 °C for 1 hour in an evaporation-deposition device, respectively. The ball-shaped crystals, and regular-prism-shaped crystals were found on top of bush-like long crystals. Two types of CdO self-organization aggregates were also observed, that is, regular circular-shaped dense aggregate and long-chainshaped aggregate. The self-organization aggregates were composed of numerous submicron CdO grains. The relationship between self-organization aggregates and surface defects of virgin N 100 silicon crystal was investigated. The results showed that the CdO self-organization aggregates were related to surface defects of the virgin N 100 silicon crystal, and a defect induced aggregation (DIA) model is suggested.
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Kato, Tomohisa, Kazutoshi Kojima, Shin Ichi Nishizawa, and Kazuo Arai. "Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals." Materials Science Forum 483-485 (May 2005): 315–18. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.315.

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We report defects study in 4H-SiC bulk crystals grown by sublimation method on micropipe filled seed crystals oriented (0001) on-axis. The seed crystals of 1~3 inch in diameter were prepared from the large 4H-SiC bulk crystals. Before the sublimation growth, micropipes of the seed crystals were filled with epilayers grown by micropipe filling technique of CVD method. We confirmed about 95% of micropipes perfectly disappeared in the grown crystal. The mechanism of the micropipe extinction was also defined by defect analysis.
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Giles, N. C., and L. E. Halliburton. "Native Defects in the Ternary Chalcopyrites." MRS Bulletin 23, no. 7 (July 1998): 37–40. http://dx.doi.org/10.1557/s0883769400029079.

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Ternary-chalcopyrite crystals contain a variety of point defects—the most common of which are vacancies, antisite ions, and impurities. Usually these defects are isolated, but they can also appear as complexes involving two or more of the simple defects. Depending on the material, the concentrations of these defects may vary from a few hundred parts per billion to a few hundred parts per million. Many of the point defects in the ternary chalcopyrites have associated optical-absorption bands with significant oscillator strengths. It is these absorption features that become important when the crystals are exposed to intense laser beams during device operation. Even a small amount of absorption will seriously degrade the performance of the device if any of the wavelengths of the various propagating beams happen to overlap an absorption band. This phenomenon can be a problem for both second-harmonic-generator and optical-parametric-oscillator applications. In general the absorption leads to heating of the crystal and results in-thermal lensing (due to temperature dependence of the index of refraction) and dephasing of the beams, and it can ultimately lead to thermal fracturing of the crystal. Thus it is important to develop a fundamental understanding of the defect structure of the ternary-chalcopyrite crystals if they are to serve as the critical component in midinfrared frequency-conversion devices. Once the nature and behavior of the point defects are established, processes can be developed to remove the defects from the crystals either during the growth itself or during post-growth treatments.
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Cheredov, V. N., and A. E. Petrakov. "Determination of the orientation of internal linear defects in isotropic optical crystals." Industrial laboratory. Diagnostics of materials 85, no. 2 (March 1, 2019): 29–32. http://dx.doi.org/10.26896/1028-6861-2019-85-2-29-32.

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Study of the structure of optical crystals and defects in them is one of the most important problems in crystal physics, crystallography and material science. Nowadays, study of the nanostructures, including the linear defects in crystals is of particular importance. Defects, and first and foremost linear imperfections of the crystal structure, significantly reduce the operational physical properties of optical crystals. Analysis of the properties of those defects, their orientation in the crystal lattice, as well as developing of the methods for determination of the crystallographic orientation of linear defects are the most important in view of the possibility of improving the properties of optical crystals. A method for rapid determination of the crystallographic orientation of linear defects (dislocations, clusters, linearly extended bulk inclusions, etc.) in optical crystals is presented. The orientation of a linearly extended micropore in an isotropic optical transparent fluorite crystal was determined using an optical microscope. The readings of the scale of the eyepiece drum were recorded when rotating the crystal fixed in the crystal holder of the microscope. Corrections for the refraction of light in the bulk of the crystal were taken into account analytically. The crystallographic orientation of the microporous in a transparent fluorite crystal was studied in detail. Crystallographic indices of micropore orientation corresponded to [100]. We developed an efficient rapid procedure for determination of the orientation of internal linear defects (imperfections) in optically isotropic crystals using an optical microscope. The restrictions imposed on the angles of crystal rotation depending on the value of the refractive index are considered for the given method of determination.
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Dissertations / Theses on the topic "Crystals – Defects"

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Pourmatin, Hossein. "Computational Multiscale Methods for Defects: 1. Line Defects in Liquid Crystals; 2. Electron Scattering in Defected Crystals." Research Showcase @ CMU, 2014. http://repository.cmu.edu/dissertations/458.

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In the first part of this thesis, we demonstrate theory and computations for finite-energy line defect solutions in an improvement of Ericksen-Leslie liquid crystal theory. Planar director fields are considered in two and three space dimensions, and we demonstrate straight as well as loop disclination solutions. The possibility of static balance of forces in the presence of a disclination and in the absence of ow and body forces is discussed. The work exploits an implicit conceptual connection between the Weingarten-Volterra characterization of possible jumps in certain potential fields and the Stokes-Helmholtz resolution of vector fields. The theoretical basis of our work is compared and contrasted with the theory of Volterra disclinations in elasticity. Physical reasoning precluding a gauge-invariant structure for the model is also presented. In part II of the thesis, the time-harmonic Schrodinger equation with periodic potential is considered. We derive the asymptotic form of the scattering wave function in the periodic space and investigate the possibility of its application as a DtN non-reflecting boundary condition. Moreover, we study the perfectly matched layer method for this problem and show that it is a reliable method, which converges rapidly to the exact solution, as the thickness of the absorbing layer increases. Moreover, we use the tight-binding method to numerically solve the Schrodinger equation for Graphene sheets, symmetry-adapted Carbon nanotubes and DNA molecules to demonstrate their electronic behavior in the presence of local defects. The results for Y-junction Carbon nanotubes depict very interesting properties and confirms the predictions for their application as new transistors.
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Benedetti, Cesare. "Defects in thermosensitive colloidal crystals." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2012. http://amslaurea.unibo.it/4322/.

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Poly-N-Isopropylacrylamide (PNIPAM) colloidal particles form crystal phases that show a thermosensitive behaviour and can be used as atomic model systems. This polymer has both hydrophilic and hydrophobic character and has interesting stimuli-responsive properties in aqueous solution, of which the most important is the temperature response. Above a certain temperature, called Lower Critical Solution Temperature (LCST), the system undergoes a volume phase transition (VPT). Above the LCST, the water is expelled from the polymer network and the swollen state at low temperature transforms into a shrunken state at high temperature. The thermoresponsive behaviour of PNIPAM can be influenced by pH and ionic strength, as well as by the presence of copolymers, such as acrylic acid. In a system formed both by particles of PNIPAM and PNIPAM doped with acrylic acid, one can control the size ratio of the two components by changing the temperature of the mixture, while keeping particle interactions relatively the same. It is therefore possible to obtain thermoresponsive colloidal crystal in which temperature changes induce defects whose formation processes and dynamics can be analysed in an optical microscope at a convenient spatial and temporal scale. The goal of this thesis project was to find the conditions in which such a system could be formed, by using characterization techniques such as Static Light Scattering, Dynamic Light Scattering and Confocal Laser Scanning Microscopy. Two PNIPAM-AAc systems were available, and after characterization it was possible to select a suitable one, on the basis of its low polydispersity and the lack of a VPT, regardless of the external conditions (system JPN_7). The synthesis of a PNIPAM system was attempted, with particles of dimensions matching the JPN_7 system and, unlike JPN_7, displaying a VPT, and one suitable candidate for the mixed system was finally found (system CB_5). The best conditions to obtain thermoresponsive crystal were selected, and the formation and healing of defects were investigated with CLSM temperature scans. The obtained results show that the approach is the correct one and that the present report could represent a useful start for future developments in defect analysis and defect dynamics studies.
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Paturi, Naveen Kumar. "Analysis of photonic crystal defects for biosensing applications." Morgantown, W. Va. : [West Virginia University Libraries], 2006. https://eidr.wvu.edu/etd/documentdata.eTD?documentid=4861.

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Thesis (M.S.)--West Virginia University, 2006.
Title from document title page. Document formatted into pages; contains viii, 70 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 55-57).
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Persson, Gulda Maria Christina Margareta. "Defects in Hard-Sphere Colloidal Crystals." Thesis, Harvard University, 2012. http://dissertations.umi.com/gsas.harvard:10695.

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Colloidal crystals of \(1.55 \mu m\) diameter silica particles were grown on {100} and flat templates by sedimentation and centrifugation. The particles interact as hard spheres. The vacancies and divacancies in these crystals are not in equilibrium, since no movement of single vacancies is observed. The lack of mobility is consistent with the extrapolation of earlier simulations at lower densities. The volume of relaxation of the vacancy has a plausible value for these densities as the volume of formation is approaching the volume in a close-packed crystal. The volume of relaxation for the divacancy is smaller than that of two vacancies, so that the association of two vacancies into a divacancy requires extra volume, and hence extra entropy. The mean square displacement of the nearest neighbors of the vacancies is an order of magnitude larger than that of the nearest neighbors of particles. The mobility of the divacancies is consistent with the extrapolation of older simulations and is similar to that associated with the annihilation of the vacancy-interstitial pair. The volume of motion of the divacancies is \(\Delta V_m = 0.19V_o (V_o\): close-packed volume) and the entropy of motion is \(\Delta S_m = 0.49k_BT\). Dislocation-twin boundary interactions can be observed by introducing strain via a misfit template. The dislocations formed are Shockley partials. When a dislocation goes through the boundary, two more dislocations are created: a reflected dislocation and one left at the boundary, both with the same magnitude Burgers vector. The dislocations relieve a total of about a third of the misfit strain. The remaining strain is sufficiently large to move the dislocation up to the boundary and close to sufficient to move the dislocation through the boundary. A small amount to extra strain energy is needed to cause nucleation of the two additional dislocations after a waiting time.
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Kurz, Günter. "Hydrodynamics of defects in nematic liquid crystal films." Thesis, King's College London (University of London), 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.313591.

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Glanville, Matthew J. "Kinematics of continuously distributed defects in crystals." Thesis, University of Nottingham, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.394747.

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Petrovskyi, Mykhailo Vasylovych, Михайло Васильович Петровський, and Михаил Васильевич Петровский. "Electrodynamic properties of defects in photonic crystals." Thesis, Sumy State University, 2017. http://essuir.sumdu.edu.ua/handle/123456789/64229.

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Now the electrodynamic systems of terahertz range devices are being improved due to the rapid development of synthetic material media possessing the property of periodicity in several directions which are call photonic crystals. The implementation of field interaction of photonic crystals with electron beams or dielectric waveguides is based on the formation of linear disturbances of their periodicity, these disturbances having strongly expressed waveguide properties.
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Bergugnat, Jean-Baptiste. "Strain and lattice rotation fields of deformed polycrystals." Thesis, Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/17899.

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KHELLAF, ABDALLAH. "LATTICE DEFECT STUDIES OF HIGH QUALITY SINGLE CRYSTAL PLATINUM AND PALLADIUM." Diss., The University of Arizona, 1987. http://hdl.handle.net/10150/184115.

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An improved quenching technique is described. This technique allows samples to be quenched at slow quenching rates without introducing unwanted dislocations during quench. High quality platinum single crystals 1 mm in diameter have been quenched from temperatures between 900°C and 1550°C using this technique. The data have been analysed and discussed using a sink model for vacancy loss proposed by Emrick. The formation energy was found to be (1.30 ± 0.03) eV. The entropy of formation and the concentration of vacancies at the melting point have been determined to be respectively (0.42 ± 0.11)k and (9.4 ± 0.7)10⁻⁴. High purity palladium single crystals have also been quenched using the same technique. Due to the need for a temperature scale, measurements of the electrical resistance of an ultra pure palladium single crystal have been made to a temperature within 100°C of the melting point. These, along with measurements of the liquid palladium resistivity, are reported. The results are discussed and compared to previously reported values.
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Yoon, C. S. "Ultrasonic studies of molecular crystals." Thesis, University of Strathclyde, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.382520.

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Books on the topic "Crystals – Defects"

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NATO, Advanced Research Workshop on Incommensurate Crystals Liquid Crystals and Quasi-Crystals (1986 Boulder Colo ). Incommensurate crystals, liquid crystals, and quasi-crystals. New York: Plenum Press, 1987.

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M, Knowles Kevin, ed. Crystallography and crystal defects. 2nd ed. Chichester, West Sussex, UK: Wiley, MA, 2012.

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M, Stoneham A., ed. Defects and defect processes in nonmetallic solids. New York: Wiley, 1985.

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1945-, Sigov A. S., ed. Defects and structural phase transitions. New York: Gordon and Breach Science Publishers, 1988.

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Kohzuki, Yohichi. Plasticity of crystals in a microscopic viewpoint on the basis of dislocation motion. Hauppauge, N.Y: Nova Science Publishers, 2011.

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Kosuge, Kōji. Chemistry of non-stoichiometric compounds. Oxford: Oxford University Press, 1994.

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Ostapenko, N. I. Spectroscopy of defects in organic crystals. Dordrecht: Kluwer Academic Publishers, 1993.

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Whitworth, Robert W. Lattice defects in non-metallic crystals. Birmingham: University of Birmingham, 1990.

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Ostapenko, N. I., V. I. Sugakov, and M. T. Shpak. Spectroscopy of Defects in Organic Crystals. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-1675-6.

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Ostapenko, N. I. Spectroscopy of Defects in Organic Crystals. Dordrecht: Springer Netherlands, 1993.

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Book chapters on the topic "Crystals – Defects"

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Vere, A. W. "Defects in Crystals." In Crystal Growth, 29–65. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4757-9897-5_3.

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Sirdeshmukh, Dinker B., Lalitha Sirdeshmukh, and K. G. Subhadra. "Defects in Crystals I (Point Defects)." In Atomistic Properties of Solids, 471–509. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-19971-4_14.

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Buzynin, A. N., N. I. Bletskan, Yu N. Kuznetsov, and N. N. Sheftal’. "Growth Defects in Semiconductor Crystals." In Growth of Crystals, 291–300. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4615-7119-3_29.

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Strukov, Boris A., and Arkadi P. Levanyuk. "Domain Structure and Defects." In Ferroelectric Phenomena in Crystals, 193–226. Berlin, Heidelberg: Springer Berlin Heidelberg, 1998. http://dx.doi.org/10.1007/978-3-642-60293-1_10.

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Buzynin, A. N., A. E. Luk’yanov, V. V. Osiko, and V. M. Tatarintsev. "Electrically Active Defects of Silicon Crystals." In Growth of Crystals, 151–62. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-2379-6_12.

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Blinov, Lev M. "Elasticity and Defects." In Structure and Properties of Liquid Crystals, 189–231. Dordrecht: Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-90-481-8829-1_8.

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Clayton, John D. "Residual Deformation from Lattice Defects." In Nonlinear Mechanics of Crystals, 337–78. Dordrecht: Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-94-007-0350-6_7.

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Sumino, Koji. "Dislocations in GaAs Crystals." In Defects and Properties of Semiconductors, 3–24. Dordrecht: Springer Netherlands, 1987. http://dx.doi.org/10.1007/978-94-009-4766-5_1.

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Sirdeshmukh, Dinker B., Lalitha Sirdeshmukh, and K. G. Subhadra. "Defects in Crystals II: Dislocations." In Atomistic Properties of Solids, 511–59. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-19971-4_15.

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Ball, John M. "Liquid Crystals and Their Defects." In Mathematical Thermodynamics of Complex Fluids, 1–46. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-67600-5_1.

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Conference papers on the topic "Crystals – Defects"

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Aleksanyan, Artur, and Etienne Brasselet. "Optical vortex coronagraphy using liquid crystal topological defects (Conference Presentation)." In Liquid Crystals XX, edited by Iam Choon Khoo. SPIE, 2016. http://dx.doi.org/10.1117/12.2237079.

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Williams, R. T. "Nature Of Defects And Defect Generation In Optical Crystals." In 1985 Albuquerque Conferences on Optics, edited by Paul W. Levy. SPIE, 1985. http://dx.doi.org/10.1117/12.975357.

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Rudolph, Peter. "Fundamentals of Defects in Crystals." In PERSPECTIVES ON INORGANIC, ORGANIC, AND BIOLOGICAL CRYSTAL GROWTH: FROM FUNDAMENTALS TO APPLICATIONS: Basedon the lectures presented at the 13th International Summer School on Crystal Growth. AIP, 2007. http://dx.doi.org/10.1063/1.2751910.

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Kralj, Samo, Saša Harkai, Luka Mesarec, Bryce Murray, Aleš Iglič, Zdravko Kutnjak, and Charles Rosenblatt. "Topological defects in nematics: fundamentals and applications." In The 2nd International Online Conference on Crystals. Basel, Switzerland: MDPI, 2020. http://dx.doi.org/10.3390/iocc_2020-07347.

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Verezub, N., and A. Prostomolotov. "DEFECT FORMATION IN DISLOCATION-FREE SILICON SINGLE CRYSTALS." In Mathematical modeling in materials science of electronic component. LCC MAKS Press, 2022. http://dx.doi.org/10.29003/m3091.mmmsec-2022/132-135.

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The physical concepts of defect formation processes in dislocation-free silicon single crystals are discussed. Mathematical models of these processes are considered for various temperature ranges realized during their growth. Near the crystallization temperature, the processes of fast recombination and transfer of intrinsic point defects (vacancies and interstitial silicon atoms) are considered in detail, the calculation results of which are verified by the experimental data of the carrier lifetime map in a silicon single crystal 150 mm in diameter grown by Czochralski method
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Adamczyk, Antoni. "Fundamental structures and defects in liquid crystals." In Liquid and Solid State Crystals: Physics, Technology, and Applications, edited by Jozef Zmija. SPIE, 1993. http://dx.doi.org/10.1117/12.156905.

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Arkhipkin, V. G., S. A. Myslivets, I. V. Timofeev, A. V. Shabanov, S. ya Vetrov, and V. P. Timofeev. "Photonic Crystals with Resonantly Absorbing Defects." In Proceedings of LFNM 2006. 8th International Conference on Laser and Fiber-Optical Networks Modeling. IEEE, 2006. http://dx.doi.org/10.1109/lfnm.2006.251988.

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Fleischhaker, Friederike, André C. Arsenault, Nicolas Tétreault, Zhuo Wang, Vladimir Kitaev, Frank Peiris, Agustin Mihi, et al. "Tunable defects in colloidal photonic crystals." In Photonics Europe, edited by Ali Adibi, Shawn-Yu Lin, and Axel Scherer. SPIE, 2006. http://dx.doi.org/10.1117/12.662316.

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Dadoenkova, N. N., I. L. Lyubchanskii, Y. P. Lee, and Th Rasing. "Dielectric photonic crystals with superconducting defects." In 2014 8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics (METAMATERIALS). IEEE, 2014. http://dx.doi.org/10.1109/metamaterials.2014.6948643.

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Nelson, D. J., W. R. Rapoport, J. T. Fleming, M. N. Long, and E. W. O’Dell. "Exploration of Defects in Cr:LiSAF Crystals." In Advanced Solid State Lasers. Washington, D.C.: OSA, 2004. http://dx.doi.org/10.1364/assl.1994.ts2.

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Reports on the topic "Crystals – Defects"

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Wunderlich, B., B. G. Sumpter, D. W. Noid, and G. L. Liang. Computer simulation of macromolecular crystals and their defects. Office of Scientific and Technical Information (OSTI), June 1993. http://dx.doi.org/10.2172/10169093.

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Partner, Heather L., Ramil Nigmatullin, Tobias Burgermeister, Jonas Keller, Karsten Pyka, Martin B. Plenio, Alex Retzker, Wojciech Hubert Zurek, Adolfo del Campo, and Tanja E. Mehlstaubler. Structural phase transitions and topological defects in ion Coulomb crystals. Office of Scientific and Technical Information (OSTI), November 2014. http://dx.doi.org/10.2172/1164430.

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Civale, L., L. Krusin-Elbaum, A. D. Marwick, F. Holtzberg, C. Feild, J. R. Thompson, R. Wheeler, M. A. Kirk, and Y. R. Sun. Arresting vortex motion in YBaCuO crystals with splay in columnar defects. Office of Scientific and Technical Information (OSTI), January 1994. http://dx.doi.org/10.2172/204571.

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PARMA UNIV (ITALY) DIPT DI FISICA. International Conference on Defects in Insulating Crystals Held at Parma, Italy on August 29th September 2nd, 1988. Fort Belvoir, VA: Defense Technical Information Center, September 1988. http://dx.doi.org/10.21236/ada206030.

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Kim, D. H., K. E. Gray, and J. D. Hettinger. A quantitative understanding of the enhanced irreversibility line and critical current density due to linear defects in Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8} single crystals with the vortex dimensionality-crossover model. Office of Scientific and Technical Information (OSTI), July 1992. http://dx.doi.org/10.2172/10144514.

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Fabietti, L. M. R. Interface stability and defect formation during crystal growth. Office of Scientific and Technical Information (OSTI), January 1991. http://dx.doi.org/10.2172/5943509.

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Karulkar, Pramod. The Dynamics of an HCP Crystal with a Substitutional Defect. Portland State University Library, January 2000. http://dx.doi.org/10.15760/etd.2187.

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Salem-Sugui, S. Jr, Donglu Shi, and S. E. McFarland. Enhanced irreversibility by crystal defects in the Bi-Sr-Ca-Cu-O system. Office of Scientific and Technical Information (OSTI), April 1991. http://dx.doi.org/10.2172/10144499.

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Yazici, R., and D. Kalyon. Microstrain and Defect Analysis of CL-20 Crystals by Novel X-Ray Methods. Fort Belvoir, VA: Defense Technical Information Center, April 1996. http://dx.doi.org/10.21236/ada311738.

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Dudley, Michael. In Situ Studies of Defect Nucleation During the PVT and CVD Growth of Silicon Carbide Single Crystals. Fort Belvoir, VA: Defense Technical Information Center, April 2008. http://dx.doi.org/10.21236/ada486859.

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