Relevant bibliographies by topics / Crystal growth and design

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Crystal growth and design'

Author: Grafiati
Published: 6 September 2023

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Journal articles on the topic "Crystal growth and design"

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Boons, Sofie. "Crystal Growing Design method: An investigation into the growing of crystals for jewellery designs." Craft Research 13, no. 2 (September 1, 2022): 303–26. http://dx.doi.org/10.1386/crre_00081_1.

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Grown crystals are used for a range of novel innovations supporting a wide array of industries such as technology, medicine and electronics. Within the jewellery industry however, grown crystals are only used in a limited capacity and those of gemstone quality mainly as a surrogate for mined gemstones. They have remained largely underused, despite their potential sustainability credentials and the creative possibilities the incorporation of the process of crystal growth holds for jewellery designers. The bespoke growth of gemstone quality crystals could lead to highly unique jewellery designs which would result in higher consumer attachment. This in addition to the potentially more sustainable production of these stones would lead to overall more sustainable products. To address the barriers that are holding jewellery designers back from exploring the growth of crystals in their practice, and to address the knowledge gap that underpins this barrier, this article presents a practice-based exploration into the method of Crystal Growing Design for jewellery. Alongside reviewing a selection of the limited number of jewellery designers who have explored organic crystal growth, the article discusses the results of the practice-based explorations done. Three hypotheses derived from the characteristics and advantages of Growing Design were tested in three case studies and aimed to explore the design opportunities the method provides designers when (1) growing in situ either in designs or (2) around shapes or (3) when utilizing the grow-ability of the process as a feature. Because the growth of gemstone quality crystals requires more elaborate and high-cost equipment, sugar, alum and salt were experimented with as a prelude to further experimentation with the technique using gemstone grade crystals. Through utilizing an explorative Do-It-Yourself (DIY) approach, the author documents and discusses the opportunities and challenges presented by the incorporation of a crystal growth method into the jewellery design practice. The research article will additionally reflect on the DIY growth of these non-gemstone quality crystals as a meaningful learning process for jewellery designers wishing to gain a deeper understanding of crystal growth. The DIY growth of crystals can be considered a valuable tinkering process to investigate design ideas. Which is particularly relevant since the method of growing crystals holds creative potential when designing jewellery in collaboration with crystal growers, or through incorporating gemstone crystal growth processes, which are the topic of the author’s overarching Ph.D. research.
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Choi, Jung Woo, Jung Gyu Kim, Byung Kyu Jang, Sang Ki Ko, Myung Ok Kyun, Jung Doo Seo, Kap Ryeol Ku, Jeong Min Choi, and Won Jae Lee. "Modified Hot-Zone Design for Large Diameter 4H-SiC Single Crystal Growth." Materials Science Forum 963 (July 2019): 18–21. http://dx.doi.org/10.4028/www.scientific.net/msf.963.18.

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6-inch 4H-SiC single crystal was grown with modified hot-zone design for large diameter crystal. The simulation data confirmed reduced temperature gradient between center and edge region of growing front, and actual growth experiment exhibited that SiC crystal with good quality was obtained with modified hot-zone design without any quality degradation in edge region of bulk crystal. Based on the mapping measurement of FWHM (Full width at half maximum) value in X-ray rocking curve, the crystal quality of SiC crystals from middle and top region of grown ingot was observed to be almost identical. Furthermore, various properties of SiC crystal grown with modified hot-zone design have been systematically investigated.
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Derby, Jeffrey J. "Theoretical Modeling of Czochralski Crystal Growth." MRS Bulletin 13, no. 10 (October 1988): 29–35. http://dx.doi.org/10.1557/s0883769400064162.

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The growth of single crystals with precisely controlled properties is one of the most demanding goals of modern materials processing, and its realization depends on the application of fundamentals from solid-state physics, chemistry, thermodynamics, and transport phenomena. Bulk semiconductor substrates and many high-power solid-state laser host materials are typically produced by solidification from the melt. The quality of the crystals produced this way hinges on process conditions which are predominantly determined by the transport of heat, mass, and momentum in the melt and crystal. Accurate modeling of melt crystal growth promises to enhance our understanding of existing systems and improve the design and control of future processes, thereby accelerating the development of advanced materials and devices.Theoretical modeling is often the only way to probe the complex interactions which characterize melt crystal growth, especially the effects of process changes on internal features of growth that cannot be directly measured on-line, such as the shape of the melt/crystal interface or temperature gradients within the growing crystal. In this way, computer simulation can serve as a design tool for developing control strategies and process innovations. Further, modeling serves as a test-bed for theoretical experiments which extend our knowledge of how fundamental physical phenomena govern the process.This report attempts to provide a glimpse of how analysis and modeling have impacted the understanding of Czochralski (CZ) crystal growth. The reader is referred to several excellent reviews for more in-depth information regarding melt crystal growth modeling.
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Steed, Jonathan W. "Crystal Growth & Design in Lockdown." Crystal Growth & Design 21, no. 1 (January 6, 2021): 1–2. http://dx.doi.org/10.1021/acs.cgd.0c01484.

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Li, Shi, Jihe Zhao, Xiao Wang, Zhihua Li, Xuefeng Gui, Jiwen Hu, Shudong Lin, and Yuanyuan Tu. "Preparation of polyethylene oxide single crystals via liquid gating technology and morphology design strategy." Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials 77, no. 5 (September 18, 2021): 819–23. http://dx.doi.org/10.1107/s2052520621008076.

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A novel type of liquid gating technology has been developed to prepare a polyethylene oxide (PEO) single-crystal film, and the crystal growth was observed via atomic force microscopy. The self-seeding method has been widely used in the preparation of polymer single crystals, but the mechanism through which single polymer crystals are formed via the combination of liquid gating technology and the self-seeding method remains unclear. To elucidate the mechanism of this process, a series of experiments were conducted in which a dilute polymer solution was sprayed onto a mica substrate to form a single-crystal film through liquid gating technology to study the effect of the crystallization time on the morphology of a thiol PEO (mPEO-SH) crystal. Based on this research, it was found that liquid gating helps to prevent twinning during crystal growth. The combination of liquid gating and self-seeding technology thus provides a new strategy for polymer single-crystal growth.
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Turner, T. D., T. T. H. Nguyen, P. Nicholson, G. Brown, R. B. Hammond, K. J. Roberts, and I. Marziano. "A temperature-controlled single-crystal growth cell for the in situ measurement and analysis of face-specific growth rates." Journal of Applied Crystallography 52, no. 2 (March 28, 2019): 463–67. http://dx.doi.org/10.1107/s1600576719002048.

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The design and construction of a growth cell for the precision measurement of face-specific single-crystal growth rates are presented. Accurate mechanical drawings in SolidWorks of the cell and individual components are provided, together with relevant construction models. A general methodology for its use in the measurement of single-crystal growth rates and their underpinning growth mechanism is presented and illustrated with representative data provided for the crystal growth of the {011} and {001} faces of RS-ibuprofen single crystals grown in ethanolic solutions. Analysis of these data highlights the utility of the methodology in morphological model development and crystallization process design.
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Zhang, Shengtao, Guoqing Fu, Hongda Cai, Junzhi Yang, Guofeng Fan, Yanyu Chen, Tie Li, and Lili Zhao. "Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth." Materials 16, no. 2 (January 12, 2023): 767. http://dx.doi.org/10.3390/ma16020767.

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As a wide bandgap semiconductor material, silicon carbide has promising prospects for application. However, its commercial production size is currently 6 inches, and the difficulty in preparing larger single crystals increases exponentially with size increasing. Large-size single crystal growth is faced with the enormous problem of radial growth conditions deteriorating. Based on simulation tools, the physical field of 8-inch crystal growth is modeled and studied. By introducing the design of the seed cavity, the radial temperature difference in the seed crystal surface is reduced by 88% from 93 K of a basic scheme to 11 K, and the thermal field conditions with uniform radial temperature and moderate temperature gradient are obtained. Meanwhile, the effects of different processing conditions and relative positions of key structures on the surface temperature and axial temperature gradients of the seed crystals are analyzed in terms of new thermal field design, including induction power, frequency, diameter and height of coils, the distance between raw materials and the seed crystal. Meanwhiles, better process conditions and relative positions under experimental conditions are obtained. Based on the optimized conditions, the thermal field verification under seedless conditions is carried out, discovering that the single crystal deposition rate is 90% of that of polycrystalline deposition under the experimental conditions. Meanwhile, an 8-inch polycrystalline with 9.6 mm uniform deposition was successfully obtained after 120 h crystal growth, whose convexity is reduced from 13 mm to 6.4 mm compared with the original scheme. The results indicate that the optimized conditions can be used for single-crystal growth.
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Li, Jinjin, Carl J. Tilbury, Seung Ha Kim, and Michael F. Doherty. "A design aid for crystal growth engineering." Progress in Materials Science 82 (September 2016): 1–38. http://dx.doi.org/10.1016/j.pmatsci.2016.03.003.

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Batur, Celal, Walter M. B. Duval, and Robert J. Bennett. "Control and design of crystal growth furnace." ISA Transactions 38, no. 1 (January 1999): 73–85. http://dx.doi.org/10.1016/s0019-0578(98)00043-3.

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Cabric, B., and T. Pavlovic. "Apparatus for crystal growth." Journal of Applied Crystallography 38, no. 2 (March 11, 2005): 368–69. http://dx.doi.org/10.1107/s002188980500511x.

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The design of an apparatus based on Bridgman's method, enabling visualization of the growth process and regulation of the crystallization rate, for obtaining single crystals from a melt in a school laboratory is presented. Conditions for obtaining single crystals of several substances are given.
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Dissertations / Theses on the topic "Crystal growth and design"

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Masaoka, Shigeyuki. "Studies on Crystal Design and Crystal Growth Control of Multinuclear Metal Complexes." 京都大学 (Kyoto University), 2004. http://hdl.handle.net/2433/147663.

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Berry, David J. "Pharmaceutical Co-crystals. Combining thermal microscopy and phase space considerations to facilitate the growth of novel phases." Thesis, University of Bradford, 2009. http://hdl.handle.net/10454/4932.

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The crystalline solid state is invaluable to both the pharmaceutical and fine chemical sectors. The advantages primarily relate to reducibility criteria required during processing of stable solid state materials and delivering purification, which is inherently performed by the crystal growth process. A major challenge is achieving control through crystallising solids with the desired physico-chemical properties. If this can be achieved the crystalline solid is of great financial and practical benefit. One emerging methodology for manipulating the solid crystalline form is the application of co-crystals. This work relates to key steps in the understanding of rational design of co-crystals utilizing crystal engineering concepts to determine systems before then applying screening criteria to the selected sub-set. Co-crystal screening is routinely undertaken using high-throughput solution growth. We report a low- to medium-throughput approach, encompassing both a melt and solution crystallization step as a route to the identification of co-crystals. Prior to solution studies, a melt growth step was included utilizing the Kofler mixed fusion method. This method allowed elucidation of the thermodynamic landscape within the binary phase diagram and was found to increase overall screening efficiency. This led to the discovery of a number of co-crystal systems with the co-former nicotinamide, with the single crystal structures determined for the following systems; R/S ibuprofen: nicotinamide, S ibuprofen: nicotinamide, R/S flurbiprofen: nicotinamide and salicylic acid: nicotinamide. To assess the crystallization and phase behaviours of determined co-crystals the R/S ibuprofennicotinamide system was selected and successful studies were undertaken determining the aqueous ternary phase behavior and the pre-nucleation speciation in methanol. There have, as yet, been a limited number of published examples which are concerned with pharmaceutical property enhancement by co-crystals, as vast proportion of the literature concerns the growth and isolation of these novel phases. To elucidate further the pharmaceutical relevance of co-crystals the properties of the R/S ibuprofen- nicotinamide system were then assessed showing a positive profile for this material.
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Patel, Dhaval D. "KINETICS AND MECHANISMS OF CRYSTAL GROWTH INHIBITION OF INDOMETHACIN BY MODEL PRECIPITATION INHIBITORS." UKnowledge, 2015. http://uknowledge.uky.edu/pharmacy_etds/47.

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Supersaturating Drug Delivery Systems (SDDS) could enhance oral bioavailability of poorly water soluble drugs (PWSD). Precipitation inhibitors (PIs) in SDDS could maintain supersaturation by inhibiting nucleation, crystal growth, or both. The mechanisms by which these effects are realized are generally unknown. The goal of this dissertation was to explore the mechanisms underpinning the effects of model PIs including hydroxypropyl β-cyclodextrins (HP-β-CD), hydroxypropyl methylcellulose (HPMC), and polyvinylpyrrolidone (PVP) on the crystal growth of indomethacin, a model PWSD. At high degrees of supersaturation (S), the crystal growth kinetics of indomethacin was bulk diffusion-controlled, which was attributed to a high energy form deposited on the seed crystals. At lower S, indomethacin growth kinetics was surface integration-controlled. The effect of HP-β-CD at high S was successfully modeled using the reactive diffusion layer theory. The superior effects of PVP and HPMC as compared to HP-β-CD at high S were attributed to a change in the rate limiting step from bulk diffusion to surface integration largely due to prevention of the high energy form formation. The effects of PIs at low S were attributed to significant retardation of the surface integration rate, a phenomenon that may reflect the adsorption of PIs onto the growing surface. PVP was selected to further understand the relationship between adsorption and crystal growth inhibition. The Langmuir adsorption isotherm model fit the adsorption isotherms of PVP and N-vinylpyrrolidone well. The affinity and extent of adsorption of PVP were significantly higher than those of N-vinylpyrrolidone, which was attributed to cooperative interactions between PVP and indomethacin. The extent of PVP adsorption on a weight-basis was greater for higher molecular weight PVP but less on a molar-basis indicating an increased percentage of loops and tails for higher molecular weight PVPs. PVP significantly inhibited indomethacin crystal growth at high S as compared to N-vinylpyrrolidone, which was attributed to a change in the growth mechanism resulting in a change in the rate limiting step from bulk diffusion to surface integration. Higher molecular weight PVPs were better inhibitors than lower molecular weight PVPs, which was attributed to a greater crystal growth barrier provided by a thicker adsorption layer.
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Ramesh, Dinesh. "The Role of Interface in Crystal Growth, Energy Harvesting and Storage Applications." Thesis, University of North Texas, 2020. https://digital.library.unt.edu/ark:/67531/metadc1752367/.

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A flexible nanofibrous PVDF-BaTiO3 composite material is prepared for impact sensing and biomechanical energy harvesting applications. Dielectric polyvinylidene fluoride (PVDF) and barium titanate (BaTiO3)-PVDF nanofibrous composites were made using the electrospinning process based on a design of experiments approach. The ultrasonication process was optimized using a 2k factorial DoE approach to disperse BaTiO3 particles in PVDF solution in DMF. Scanning electron microscopy was used to characterize the microstructure of the fabricated mesh. The FT-IR and Raman analysis were carried out to investigate the crystal structure of the prepared mesh. Surface morphology contribution to the adhesive property of the composite was explained through contact angle measurements. The capacitance of the prepared PVDF- BaTiO3 nanofibrous mesh was a more than 40% increase over the pure PVDF nanofibers. A comparative study of dielectric relaxation, thermodynamics properties and impact analysis of electrospun polyvinylidene fluoride (PVDF) and 3% BaTiO3-PVDF nanofibrous composite are presented. The frequency dependent dielectric properties revealed micro structural features of the composite material. The dielectric relaxation behavior is further supported by complex impedance analysis and Nyquist plots. The temperature dependence of electric modulus shows Arrhenius type behavior. The observed non-Debye dielectric relaxation in electric loss modulus follows a thermally activated process which can be attributed to a small polaron hopping effect. The particle induced crystallization is supported with thermodynamic properties from differential scanning calorimetric (DSC) measurements. The observed increase in piezoelectric response by impact analysis was attributed to the interfacial interaction between PVDF and BaTiO3. The interfacial polarization between PVDF and BaTiO3 was studied using density functional theory calculations and atomic charge density analysis. The results obtained indicates that electrospinning offers a potential way to produce nanofibers with desired crystalline nature which was not observed in molded samples. In addition, BaTiO3 can be used to increase the capacitance, desired surface characteristics of the PVDF nanofibers which can find potential application as flexible piezoelectric sensor mimicking biological skin for use in impact sensing and energy harvesting applications.
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Frewin, Christopher L. "Design and Implementation of a 200mm 3C-SiC CVD Reactor." [Tampa, Fla] : University of South Florida, 2006. http://purl.fcla.edu/usf/dc/et/SFE0001855.

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Despréaux, Stéphane. "Optimisation de forme en cristallogenèse." Université Joseph Fourier (Grenoble), 1998. http://www.theses.fr/1998GRE10220.

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L'origine de ce travail est l'étude d'un problème industriel sur la mise en forme de cristaux par l'intermédiaire des forces capillaires. Le modèle mathématique utilisé consiste à résoudre un problème surdimensionné basé sur l'équation à courbure principale. Nous avons résolu le problème en lui associant un problème d'optimisation de forme. Le travail présenté dans cette thèse comprend deux principales parties : - l'étude mathématique de l'équation à courbure principale avec conditions aux limites mixtes - l'étude mathématique et numérique du problème d'optimisation de forme. Nous avons prouvé l'existence et l'unicité d'une solution à l'équation à courbure principale moyennant une hypothèse liant la courbure et l'épaisseur du domaine. Cette condition est bien moins restrictive que celle usuellement utilisée qui suppose le domaine convexe. Dans cette classe de domaines, nous avons ensuite prouvé l'existence d'un domaine optimal et mis au point une méthode numérique pour le calculer, par la technique de variation de domaine. Cependant, numériquement, cette méthode nécessite la donnée d'un bon domaine initial. Si ce dernier est mal choisi, l'algorithme diverge vers une forme souvent fantaisiste. Pour obtenir automatiquement un bon domaine initial, nous avons utilisé une technique d'optimisation de forme par domaine fictif. Nous avons ensuite présenté les résultats numériques ainsi obtenus
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Smith, Matthew T. "Design And Development Of A Silicon Carbide Chemical Vapor Deposition Reactor." [Tampa, Fla.] : University of South Florida, 2003. http://purl.fcla.edu/fcla/etd/SFE0000145.

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Kananagh, A. "The crystal growth and crystal growth inhibition of calcium carbonate." Thesis, University of Cambridge, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.383820.

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Peltier, Raoul. "Biomimetic modification of crystal growth." Thesis, University of Auckland, 2011. http://hdl.handle.net/2292/7150.

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Lee, William Thomas. "Surface relaxations and crystal growth." Thesis, University of Cambridge, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621106.

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Books on the topic "Crystal growth and design"

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R, Desiraju G., ed. Crystal design: Structure and function. Chichester, West Sussex, England: Wiley, 2003.

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Dario, Braga, and Grepioni Fabrizia, eds. Making crystals by design: Methods, techniques and applications. Weinheim: Wiley-VCH, 2007.

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Center, Lewis Research, ed. The design of a transparent vertical multizone furnace: Application to thermal field tuning and crystal growth. [Cleveland, Ohio]: National Aeronautics and Space Administration, Lewis Research Center, 1998.

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Iga, Kenʼichi. Process technology for semiconductor lasers: Crystal growth and microprocesses. Berlin: Springer, 1996.

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P, Marsh Steven, TMS Solidification Committee., Minerals, Metals and Materials Society. Fall Meeting, and Minerals, Metals and Materials Society. Meeting, eds. Solidification 1998: Proceedings of symposia sponsored by the Solidification Committee of the Materials Design and Manufacturing Division of TMS, held at the TMS Fall Meeting in Indianapolis, Indiana, September 15-18, 1997 and at the TMS Annual Meeting in San Antonio, Texas, February 15-19, 1998. Warrendale, Pa: Minerals, Metals & Materials Society, 1998.

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United States. National Aeronautics and Space Administration., ed. Research reports: 1988 NASA/ASEE Summer Faculty Fellowshop Program. Tuscaloosa, Ala: University of Alabama, 1988.

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Germann, Tim David. Design and Realization of Novel GaAs Based Laser Concepts. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012.

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Danilo, Crippa, Rode Daniel L, and Masi Maurizio, eds. Silicon epitaxy. San Diego: Academic Press, 2001.

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Vladimir, Matias, and Materials Research Society Meeting, eds. Artificially induced grain alignment in thin films: Symposium held December 2-3, 2008, Boston, Massachusetts, U.S.A. Warrendale, Pa: Materials Research Society, 2009.

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Vere, A. W. Crystal Growth. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4757-9897-5.

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Book chapters on the topic "Crystal growth and design"

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Blagden, Nicholas. "Crystal Growth." In Crystal Engineering The Design and Application of Functional Solids, 127–53. Dordrecht: Springer Netherlands, 1999. http://dx.doi.org/10.1007/978-94-015-9105-8_8.

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Winkler, Jan, Michael Neubert, Joachim Rudolph, Ning Duanmu, and Michael Gevelber. "Czochralski Process Dynamics and Control Design." In Crystal Growth Processes Based on Capillarity, 115–202. Chichester, UK: John Wiley & Sons, Ltd, 2010. http://dx.doi.org/10.1002/9781444320237.ch3.

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Schlücker, Eberhard, and Anna-Carina Luise Kimmel. "Technological Challenges of Autoclave Design for Ammonothermal Syntheses." In Ammonothermal Synthesis and Crystal Growth of Nitrides, 27–44. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-56305-9_3.

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Ye, Ning. "Structure Design and Crystal Growth of UV Nonlinear Borate Materials." In Structure-Property Relationships in Non-Linear Optical Crystals I, 181–221. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/430_2011_69.

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Ishiguro, Takehiko, Kunihiko Yamaji, and Gunzi Saito. "Design, Synthesis, and Crystal Growth of Organic Metals and Superconductors." In Springer Series in Solid-State Sciences, 393–454. Berlin, Heidelberg: Springer Berlin Heidelberg, 1998. http://dx.doi.org/10.1007/978-3-642-58262-2_11.

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Addadi, L., Z. Berkovitch-Yellin, I. Weissbuch, J. Van Mil, M. Lahav, and L. Leiserowitz. "Molecular Discrimination in Crystal Growth in the Presence of “Tailor-Made” Inhibitors." In Design and Synthesis of Organic Molecules Based on Molecular Recognition, 245–68. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-70926-5_21.

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Czarny, O., P. Droll, M. Ganaoui, B. Fischer, M. Hainke, L. Kadinski, P. Kaufmann, et al. "High Performance Computer Codes and their Application to Optimize Crystal Growth Processes, III." In Notes on Numerical Fluid Mechanics and Multidisciplinary Design (NNFM), 49–76. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/978-3-540-45693-3_4.

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Carter, Phillip W., Lynn M. Frostman, Andrew C. Hillier, and Michael D. Ward. "Nucleation and Growth of Molecular Crystals on Molecular Interfaces." In Interfacial Design and Chemical Sensing, 186–201. Washington, DC: American Chemical Society, 1994. http://dx.doi.org/10.1021/bk-1994-0561.ch017.

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Kim, Jung Kyu, Kap Ryeol Ku, Dong Jin Kim, Sang Phil Kim, Won Jae Lee, Byoung Chul Shin, Geun Hyoung Lee, and Il Soo Kim. "SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design." In Materials Science Forum, 47–50. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.47.

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Strachota, P., and M. Beneš. "Design and Verification of the MPFA Scheme for Three-Dimensional Phase Field Model of Dendritic Crystal Growth." In Numerical Mathematics and Advanced Applications 2011, 459–67. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-33134-3_49.

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Conference papers on the topic "Crystal growth and design"

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Ma, R. H., H. Zhang, M. Dudley, and V. Prasad. "Thermal System Design and Dislocation Reduction for Growth of Wide Bandgap Crystals." In ASME 2003 Heat Transfer Summer Conference. ASMEDC, 2003. http://dx.doi.org/10.1115/ht2003-47564.

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In SiC vapor growth, micropipes and dislocations that originate at the seed/boule interface can continuously propagate into the newly grown crystal. They adversely affect the quality of the crystals. The defect density can be reduced by the method of growing a large diameter crystal from a small seed through lateral growth under controlled thermal environment. In this paper, SiC growth processes with varying thermal conditions have been simulated. The effects of operational parameters such as axial and radial temperature gradients, and the presence of polycrystal are also investigated. The current finding can also help in the design of AlN/GaN growth system.
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Fiske, Michael R. "Design and development of the Zeolite Crystal Growth Facility." In San Diego, '91, San Diego, CA, edited by James D. Trolinger and Ravindra B. Lal. SPIE, 1991. http://dx.doi.org/10.1117/12.49586.

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Srinivasan, Arvind, Celal Batur, Robert Veillette, Bruce N. Rosenthal, and Walter M. B. Duval. "Projective Control Design for Multi-Zone Crystal Growth Furnace." In 1993 American Control Conference. IEEE, 1993. http://dx.doi.org/10.23919/acc.1993.4793456.

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Prathap, S., and J. Madhavan. "Synthesis, Growth and Computational Studies on mNA Single Crystal." In CIOMP-OSA Summer Session on Optical Engineering, Design and Manufacturing. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/sumsession.2013.th5.

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Wejrzanowski, T., M. Grybczuk, E. Tymicki, and K. J. Kurzydlowski. "Numerical design of SiC bulk crystal growth for electronic applications." In INTERNATIONAL CONFERENCE OF COMPUTATIONAL METHODS IN SCIENCES AND ENGINEERING 2014 (ICCMSE 2014). AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4897866.

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DeShazer, LARRY G. "Survey of phase-matchable fibers for nonlinear optics." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.wb3.

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A variety of methods have emerged to fabricate single-crystal nonlinear optical fibers. As a class of crystals, nonlinear materials encompass the entire range of thermal behavior possible in compounds. Therefore, it has become increasingly clear that no one method of single-crystal fiber growth can accommodate the disparities of all the nonlinear crystals. Traveling-zone, Bridgman, and Czochralski methods of crystal growth have all been successfully adopted in producing single-crystal fibers. The traveling-zone method converted polycrystalline fibers to single-crystal fibers by using a submillimeter melt zone produced by a small electrical heater. Crystal fibers of CuCI were grown by this method. A Bridgman method produced single-crystal fibers in which the melt is vapor-pressure stabilized. This method was applicable to nearly congruent melting materials such as KDP-isomorph crystals. A capillary-fed Czochralski method was developed to grow fibers of congruently melting materials such as NaNO3. Capillary designs overcame the thermal steady-state limitations of the conventional Czochralski technique applied to fiber growth. All these methods of growing nonlinear optical fibers showed dimensional irregularities of the crystal fibers, to varying degrees. Because the efficiency of phase-matched processes in nonlinear fibers is sharply reduced by surface imperfections, an alternative hybrid approach was developed. This approach combined the desirable uniformity of glass fibers with bulk nonlinear crystals. The evanescent portion of guided waves in the glass core can be coupled to the nonlinear polarization of the crystal clad.
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BAKER, ERNEST L., KEVIN M. JAANSALU, and CHRISTOPHER HOLLANDS. "EXUDATION AND CRYSTAL GROWTH OF TNT IN MUNITIONS." In 32ND INTERNATIONAL SYMPOSIUM ON BALLISTICS. Destech Publications, Inc., 2022. http://dx.doi.org/10.12783/ballistics22/36059.

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For trinitrotoluene (TNT), exudation has been a recurring problem since the early 1920s. TNT exudate typically has an oily appearance and dries to a somewhat black color. Exudate, by itself, appears to be no more sensitive than TNT. However, if mixed with sand or grit, it can be very sensitive to impact or friction. Munitions which exhibit TNT exudate except where the design allows, should not be considered as safe and suitable for service. TNT exudate is formed due to the presence of impurities and the high temperatures that can be experienced in the service environment. Older TNT manufacturing methods leave significant impurities within the TNT, whereas more modern methods have improved the quality of the processed TNT, removing most but not all impurities. Another potential issue with exudation is crystal growth. There is some discussion within the munitions safety community that TNT crystals can grow within cavities of aged munitions. However, we believe that internal fill exudate and TNT crystal growth does not constitute a major concern for munition safety if standard munition handling practices are observed.
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Gil-Lafon, Evelyne, Agnes Trassoudaine, Dominique Castelluci, Alberto Pimpinelli, Rachida Saoudi, Olivier M. Parriaux, Alain Muravaud, and Claire Darraud. "Submicrometer scale growth morphology control: a new route for the making of photonic crystal structures?" In Optical Systems Design, edited by Claude Amra, Norbert Kaiser, and H. Angus Macleod. SPIE, 2004. http://dx.doi.org/10.1117/12.513376.

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Wu, Bei, Ronghui Ma, Hui Zhang, Michael Dudley, Raoul Schlesser, and Zlatko Sitar. "Growth Kinetics and Thermal Stress in AlN Bulk Crystal Growth." In ASME 2002 International Mechanical Engineering Congress and Exposition. ASMEDC, 2002. http://dx.doi.org/10.1115/imece2002-33700.

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Group III nitrides, such as GaN, AlN and InGaN, have attracted a lot of attention due to the development of blue-green and ultraviolet light emitting diodes (LEDs) and lasers. In this paper, an integrated model has developed based on the conservation of momentum, mass, chemical species and energy together with necessary boundary conditions that account for heterogeneous chemical reactions both at the source and seed surfaces. The simulation results have been compared with temperature measurements for different power levels and flow rates in a reactor specially designed for nitride crystal growth at NCSU. It is evident that the heat power level affects the entire temperature distribution greatly while the flow rate has minor effect on the temperature distribution. The results also show that the overall thermal stress level is higher than the critical resolved shear stress, which means thermal elastic stress can be a major source of dislocation density in the as-grown crystal. The stress level is strongly dependent on the temperature gradient in the as-grown crystal. Results are correlated well with defects showing in an X-ray topograph for the AlN wafer.
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Fang, Haisheng, Lili Zheng, and Hui Zhang. "Control of Flow Pattern and Solidification Interface Shape in an Induction Heated Czochralski Crystal Growth System." In ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference collocated with the ASME 2007 InterPACK Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ht2007-32288.

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Optical crystals grown by Czochralski technique from a solute-rich melt usually suffer defects of melt inclusion or bubble core defects, which severely affect the optical, thermal and mechanical properties of the material. It is well known that the formation of melt inclusion or bubble core is highly related to species distribution in the growth system especially at the solidification interface and the shape of the growth interface. This paper has examined the flow pattern and solidification interface changes by changing the forced convection, e.g., crystal rotation and by changing the natural convection, e.g., inserting a horizontal disk plate. The relative effect of fluid-flow convection modes in the melt associated with crystal rotation rate is represented by a dimensionless parameter, Gr/Re2. Increasing the rotation rate will cause the solid-liquid interface change from the convex shape to concave. When the crystal rotation rate is relatively low and natural convection is strong, Gr/Re2 is large. In this case, the concentration of species pertinent to melt inclusion moves down along the axis of rotation. When the crystal rotation rate is increased, the value of Gr/Re2 decreases. The precipitated composition spreads over the growing interface may then be swiped away from the growth interface by increased crystal rotation. Melt inclusion-free crystals can thus be obtained. The relationship between Gr/Re2 and growth interface shape change is achieved by numerical simulations. The stagnant point location as a function of crystal rotation is also presented, which shows that the stagnant point moves outward by increasing Reynolds number and/or reducing Grashof number. From such understanding, the interface shape and melt inclusion position can then be controlled through control of Gr/Re2 in the growth system. Many times, it is, however, not practical in the experiments to use a high rotation rate for optical crystal growth since high rotation rate will introduce the striation defects. A new design to reduce natural convection is then proposed to improve the effect of crystal rotation and to control the solidification interface shape. Numerical simulations have been performed to demonstrate the possibility of the new design. Results show that such design is very effective and practical to control the melt inclusion and the solidification interface shape.
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Reports on the topic "Crystal growth and design"

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Canfield, Paul. Design, Discovery and Growth of Novel Materials For Basic Research: An Urgent U.S. Need Report on the DOE/BES Workshop: “Future Directions of Design, Discovery and Growth of Single Crystals for Basic Research”. Office of Scientific and Technical Information (OSTI), October 2003. http://dx.doi.org/10.2172/1278493.

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Land, T., and R. Hawley-Fedder. Advanced Crystal Growth Technology. Office of Scientific and Technical Information (OSTI), March 2005. http://dx.doi.org/10.2172/917916.

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Strain, John. Numerical Modelling of Crystal Growth. Fort Belvoir, VA: Defense Technical Information Center, September 1992. http://dx.doi.org/10.21236/ada271206.

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Randles, M. H. Contract Crystal Growth and Fabrication Services. Fort Belvoir, VA: Defense Technical Information Center, February 1991. http://dx.doi.org/10.21236/ada232120.

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Dapkus, P. D. Apparatus for Analysis of Epitaxial Crystal Growth. Fort Belvoir, VA: Defense Technical Information Center, July 1986. http://dx.doi.org/10.21236/ada172890.

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Brown, Margaret. Gordon Research Conference on Crystal Growth (1990). Fort Belvoir, VA: Defense Technical Information Center, April 1990. http://dx.doi.org/10.21236/ada223218.

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Mei, Dongming, Guojian Wang, Gang Yang, Wenzhao Wei, Hao Mei, Xianghua Meng, Rajendra Penth, et al. Crystal Growth and Detector Development for Underground Experiments. Office of Scientific and Technical Information (OSTI), August 2018. http://dx.doi.org/10.2172/1463301.

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Stevenson, D. A. CrystaL Growth and Mechanical Properties of Semiconductor Alloys. Fort Belvoir, VA: Defense Technical Information Center, April 1988. http://dx.doi.org/10.21236/ada198153.

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Fabietti, L. M. R. Interface stability and defect formation during crystal growth. Office of Scientific and Technical Information (OSTI), January 1991. http://dx.doi.org/10.2172/5943509.

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Schaffers, K. I., and S. A. Payne. Crystal growth of optical materials for advanced lasers. Office of Scientific and Technical Information (OSTI), February 1997. http://dx.doi.org/10.2172/514387.

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