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Relevant bibliographies by topics / Crystal defect analysis

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Academic literature on the topic 'Crystal defect analysis'

Author: Grafiati

Published: 1 December 2023

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Journal articles on the topic "Crystal defect analysis"

1

Kirste, Lutz, Karolina Grabianska, Robert Kucharski, Tomasz Sochacki, Boleslaw Lucznik, and Michal Bockowski. "Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography." Materials 14, no. 19 (2021): 5472. http://dx.doi.org/10.3390/ma14195472.

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X-ray topography defect analysis of entire 1.8-inch GaN substrates, using the Borrmann effect, is presented in this paper. The GaN wafers were grown by the ammonothermal method. Borrmann effect topography of anomalous transmission could be applied due to the low defect density of the substrates. It was possible to trace the process and growth history of the GaN crystals in detail from their defect pattern imaged. Microscopic defects such as threading dislocations, but also macroscopic defects, for example dislocation clusters due to preparation insufficiency, traces of facet formation, growth

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Mohammed, M., and W. Cel. "Photonic crystal analysis for multiplexer and de-multiplexer applications." Journal of Physics: Conference Series 2322, no. 1 (2022): 012074. http://dx.doi.org/10.1088/1742-6596/2322/1/012074.

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Abstract In our present work, we have made an investigation of several theoretical tools using the finite element method depending on the COMSOL MULTIPHYSICS program, for intuitive insight into the optical properties of the optical crystal. Analysis of the bandgap of a two-dimensional periodic photonic crystal with square lattice, evaluate the photonic band structure by the eigenfrequency of the unit cell of the first Brillouin zone. Moreover, creating defect mode inside the bandgap of photonic crystal, such as a resonant cavity, waveguide defect, narrowband filter, sharp drop filter, channel

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Wang, Ke, Ren Ke Kang, Zhu Ji Jin, and Dong Ming Guo. "Theoretical Analysis and Experimental Verification of Triangular Fracture Defects of MgO Single Crystal Substrate in Lapping or Polishing Process." Key Engineering Materials 364-366 (December 2007): 739–44. http://dx.doi.org/10.4028/www.scientific.net/kem.364-366.739.

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MgO single crystal is mainly used as substrate for high temperature superconductor film. Surface quality of MgO substrate has significant effect on the function of high temperature superconductor film. MgO single crystal is a typical hard and brittle material, and is easily cleaved along the {100} face, so some defects are always generated on the substrate surface while lapping and polishing, which badly affects the surface quality of the substrate. In this paper, a kind of typical defect, the triangular fracture defect which is on the substrate surface after lapping and polishing, is analyzed

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Larson, Bennett C. "Historical Perspective on Diffraction Line-Profile Analyses for Crystals Containing Defect Clusters." Crystals 9, no. 5 (2019): 257. http://dx.doi.org/10.3390/cryst9050257.

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Deviations of crystal diffraction line profiles from those predicted by the dynamical theory of diffraction for perfect crystals provide a window into the microscopic distributions of defects within non-perfect crystals. This overview provides a perspective on key theoretical, computational, and experimental developments associated with the analysis of diffraction line profiles for crystals containing statistical distributions of point defect clusters, e.g., dislocation loops, precipitates, and stacking fault tetrahedra. Pivotal theoretical developments beginning in the 1940s are recalled and

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Kato, Tomohisa, Kazutoshi Kojima, Shin Ichi Nishizawa, and Kazuo Arai. "Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals." Materials Science Forum 483-485 (May 2005): 315–18. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.315.

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We report defects study in 4H-SiC bulk crystals grown by sublimation method on micropipe filled seed crystals oriented (0001) on-axis. The seed crystals of 1~3 inch in diameter were prepared from the large 4H-SiC bulk crystals. Before the sublimation growth, micropipes of the seed crystals were filled with epilayers grown by micropipe filling technique of CVD method. We confirmed about 95% of micropipes perfectly disappeared in the grown crystal. The mechanism of the micropipe extinction was also defined by defect analysis.

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Chikvaidze, G., N. Mironova-Ulmane, A. Plaude, and O. Sergeev. "Investigation of Silicon Carbide Polytypes by Raman Spectroscopy." Latvian Journal of Physics and Technical Sciences 51, no. 3 (2014): 51–57. http://dx.doi.org/10.2478/lpts-2014-0019.

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Abstract Polytypes of colourless and coloured single crystals of silicon carbide (SiC) grown on SiC substrates by chemical vapour deposition are studied using Raman spectroscopy supplemented by scanning electron microscopy (SEM) and X-ray diffraction (XRD) analyses. The SEM analysis of the defect stacking faults, inclusions of defects and their distribution has shown that they correlate with the peak positions of the obtained Raman spectra and with the XRD data on the crystal structure

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Katch, L., M. Moghaddaszadeh, C. L. Willey, A. T. Juhl, M. Nouh, and A. P. Argüelles. "Analysis of geometric defects in square locally resonant phononic crystals: A comparative study of modeling approaches." Journal of the Acoustical Society of America 154, no. 5 (2023): 3052–61. http://dx.doi.org/10.1121/10.0022330.

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Phononic crystals can develop defects during manufacturing that alter the desired dynamic response and bandgap behavior. This frequency behavior change can enable successful defect inspection if the characteristic defect response is known. In this study, the behavior of a defective square unit cell comprising a freed and shortened leg is studied using a wave finite element method and an approximate continuous-lumped model to elucidate the defect induced qualitative dynamical features. These metrics are a computationally inexpensive alternative to modeling a defective unit cell within a large p

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Nykyruy, L. I., V. V. Prokopiv, M. P. Levkun, and A. V. Lysak. "Analysis of Defect Subsystem ZnSe, Doped with Transition Metals (Co, Ni)." Фізика і хімія твердого тіла 16, no. 4 (2015): 716–21. http://dx.doi.org/10.15330/pcss.16.4.716-721.

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The crystal-quasichemical formulae of doping at the Crystals n-ZnSе:Cо(Ni) аnd p-ZnSе:Cо(Ni) are suggested. The dependence on point defects concentration, on free chargecarrier concentration and Hall concentration of the degree of nonstoichiometry (α, β) are calculated.

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Al-Sharab, Jafar F., S. D. Tse, and B. H. Kear. "Defect Analysis of Single Crystal Synthetic Diamond." Microscopy and Microanalysis 24, S1 (2018): 1766–67. http://dx.doi.org/10.1017/s1431927618009315.

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Song, Pingxin, Zhiwei Zhao, Xiaodong Xu, Peizhen Deng, and Jun Xu. "Defect analysis in Czochralski-grown Yb:FAP crystal." Journal of Crystal Growth 286, no. 2 (2006): 498–501. http://dx.doi.org/10.1016/j.jcrysgro.2005.10.116.

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Dissertations / Theses on the topic "Crystal defect analysis"

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Eddleston, Mark David. "Crystal form and defect analysis of pharmaceutical materials." Thesis, University of Cambridge, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.610090.

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Giannattasio, Armando. "Interaction of oxygen and nitrogen impurities with dislocations in silicon single-crystals." Thesis, University of Oxford, 2004. http://ora.ox.ac.uk/objects/uuid:41cf8568-8411-4a85-8788-7d390307c7c3.

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An experimental technique based on the immobilisation of dislocations by segregation of impurity atoms to the dislocation core (dislocation locking) has been developed and used to investigate the critical conditions for slip occurrence in Czochralski-grown and nitrogen-doped floating-zone-grown silicon crystals. The accumulation of nitrogen and oxygen impurities along a dislocation and the resulting dislocation locking effect has been investigated in silicon samples subjected to different annealing conditions. In particular, the stress needed to unlock the dislocations after their decoration b

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Paturi, Naveen Kumar. "Analysis of photonic crystal defects for biosensing applications." Morgantown, W. Va. : [West Virginia University Libraries], 2006. https://eidr.wvu.edu/etd/documentdata.eTD?documentid=4861.

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Thesis (M.S.)--West Virginia University, 2006.<br>Title from document title page. Document formatted into pages; contains viii, 70 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 55-57).

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Druet, Pierre-Etienne. "Analysis of a coupled system of partial differential equations modeling the interaction between melt flow, global heat transfer and applied magnetic fields in crystal growth." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät II, 2009. http://dx.doi.org/10.18452/15893.

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Hauptthema der Dissertation ist die Analysis eines nichtlinearen, gekoppelten Systems partieller Differentialgleichungen (PDG), das in der Modellierung der Kristallzüchtung aus der Schmelze mit Magnetfeldern vorkommt. Die zu beschreibenden Phenomäne sind einerseits der im elektromagnetisch geheizten Schmelzofen erfolgende Wärmetransport (Wärmeleitung, -konvektion und -strahlung), und andererseits die Bewegung der Halbleiterschmelze unter dem Einfluss der thermischen Konvektion und der angewendeten elektromagnetischen Kräfte. Das Modell besteht aus den Navier-Stokeschen Gleichungen für eine

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GOMES, LAERCIO. "Estudo compreensivo da fotodissociacao do ion OHsub(-) nos haletos alcalinos e sua interacao com centros de cor." reponame:Repositório Institucional do IPEN, 1985. http://repositorio.ipen.br:8080/xmlui/handle/123456789/9850.

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Made available in DSpace on 2014-10-09T12:32:05Z (GMT). No. of bitstreams: 0<br>Made available in DSpace on 2014-10-09T13:56:51Z (GMT). No. of bitstreams: 1 02301.pdf: 3265642 bytes, checksum: ef5be621c56bae7b751bf5bc812f0c07 (MD5)<br>Tese (Doutoramento)<br>IPEN/T<br>Instituto de Pesquisas Energeticas e Nucleares - IPEN/CNEN-SP

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Olivier, Ezra Jacobus. "Analysis of the extended defects in 3C-SiC." Thesis, Nelson Mandela Metropolitan University, 2008. http://hdl.handle.net/10948/730.

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The dissertation focuses on the analysis of the extended defects present in as-grown and proton bombarded β-SiC (annealed and unannealed) grown by chemical vapour deposition (CVD) on (001) Si. The proton irradiation was done to a dose of 2.8 × 1016 protons/cm2 and the annealing took place at 1300°C and 1600°C for 1hr. The main techniques used for the analysis were transmission electron microscopy (TEM) and high resolution TEM (HRTEM). From the diffraction study of the material the phase of the SiC was confirmed to be the cubic beta phase with the zinc-blende structure. The main defects found i

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Holland, Anthony James. "Analysis of crystal defects by simulation of x-ray section topographs." Thesis, Durham University, 1993. http://etheses.dur.ac.uk/5589/.

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This thesis is concerned with the simulation of the contrast in X-ray section topographs due to the strains induced in silicon single crystals by various types of technologically relevant crystal defect. A general introduction to the field of X- ray topography is presented, illustrating that this technique is well suited to the characterisation of defect induced strain in highly perfect crystals. A review of X-ray dynamical theory is given, culminating in Takagi's equations for a crystal containing a defect. Techniques for simulating X-ray section topographs, based on Takagi's equations, are d

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Nakamura, Daisuke. "Bulk growth and extended-defect analysis of high-quality SiC single crystals." 京都大学 (Kyoto University), 2008. http://hdl.handle.net/2433/136293.

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Garces, Nelson Y. "Analysis of paramagnetic point defects in KH₂PO₄ and KTiOPO₄ crystals." Morgantown, W. Va. : [West Virginia University Libraries], 2000. http://etd.wvu.edu/templates/showETD.cfm?recnum=1778.

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Thesis (Ph. D.)--West Virginia University, 2000.<br>Title from document title page. Document formatted into pages; contains xii, 116 p. : ill. Includes abstract. Includes bibliographical references (p. 106-109).

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Hung, Wing Wa. "FTIR and XPS of congruent and stoichiometric LiNbO3." HKBU Institutional Repository, 2003. http://repository.hkbu.edu.hk/etd_ra/442.

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Books on the topic "Crystal defect analysis"

1

Snyder, R. L. Defect and microstructure analysis by diffraction. Oxford University Press, 1999.

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Large-angle convergent-beam electron diffraction (LACBED): Applications to crystal defects. Société Française des Microscopies, 2002.

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3

Introduction to elasticity theory for crystal defects. 2nd ed. World Scientific, 2016.

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Introduction to elasticity theory for crystal defects. Cambridge University Press, 2012.

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5

E, Cladis P., Palffy-Muhoray P, and Saupe Alfred 1925-, eds. Dynamics and defects in liquid crystals: A festschrift in honor of Alfred Saupe. Gordon and Breach Science Publishers, 1998.

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6

Yang, Guang. Flux pinning, defect analysis and growth of high temperature superconducting single crystals. University of Birmingham, 1994.

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7

L, Aseev A., ed. Clusters of interstitial atoms in silicon and germanium. Akademie Verlag, 1994.

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8

Optical absorption of impurities and defects in semiconducting crystals: Hydrogen-like centres. Springer, 2010.

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9

Spaeth, Johann-Martin. Structural analysis of point defects in solids: An introduction to multiple magnetic resonance spectroscopy. Springer-Verlag, 1992.

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Spaeth, Johann-Martin. Structural Analysis of Point Defects in Solids: An Introduction to Multiple Magnetic Resonance Spectroscopy. Springer Berlin Heidelberg, 1992.

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Book chapters on the topic "Crystal defect analysis"

1

Jianfa, Jing, Wang Shuai, Chen Feng, Yang Lingzhi, and Fu Baoquan. "Analysis of Coarse Crystal Defect During Rolling of 3J1A Alloy." In The Minerals, Metals & Materials Series. Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-22524-6_77.

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Bassignana, I. C., D. A. Macquistan, and D. A. Clark. "X-Ray Topography and TEM Study of Crystal Defect Propagation in Epitaxially Grown AlGaAs Layers on GaAs(001)." In Advances in X-Ray Analysis. Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3744-1_56.

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Bhavana, A., Puspa Devi Pukhrambam, Abinash Panda, and Malek G. Daher. "Design and Analysis of T-Shaped Defect-Based Photonic Crystal Waveguide for Application of Optical Interconnect." In Lecture Notes in Electrical Engineering. Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-4495-8_2.

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Hashizume, Takashi, Atsushi Saiki, and Shogo Miwa. "Crystal Structure of the Defect Pyrochlore Potassium Tantalate on Ion-Exchanging Dipping in Sodium Aqueous Solution by Rietveld Analysis." In Ceramic Transactions Series. John Wiley & Sons, Inc., 2018. http://dx.doi.org/10.1002/9781119494096.ch14.

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Benediktovitch, Andrei, Ilya Feranchuk, and Alexander Ulyanenkov. "X-Ray Diffraction from Crystals with Defects." In Theoretical Concepts of X-Ray Nanoscale Analysis. Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-38177-5_6.

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Holba, Pavel, and David Sedmidubský. "Crystal Defects and Nonstoichiometry Contributions to Heat Capacity of Solids." In Hot Topics in Thermal Analysis and Calorimetry. Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-3150-1_3.

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Gao, Bing, and Koichi Kakimoto. "Numerical Analysis of Impurities and Dislocations During Silicon Crystal Growth for Solar Cells." In Defects and Impurities in Silicon Materials. Springer Japan, 2015. http://dx.doi.org/10.1007/978-4-431-55800-2_5.

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Kitano, Tomohisa, and Kazuko Ikeda. "Analysis of Defects in Devices and Silicon Crystals in Production Lines." In Ultraclean Surface Processing of Silicon Wafers. Springer Berlin Heidelberg, 1998. http://dx.doi.org/10.1007/978-3-662-03535-1_20.

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Kato, Tomohisa, Tomonori Miura, Keisuke Wada, et al. "Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping." In Materials Science Forum. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.239.

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Wang, Ke, Ren Ke Kang, Zhu Ji Jin, and Dong Ming Guo. "Theoretical Analysis and Experimental Verification of Triangular Fracture Defects of MgO Single Crystal Substrate in Lapping or Polishing Process." In Optics Design and Precision Manufacturing Technologies. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-458-8.739.

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Conference papers on the topic "Crystal defect analysis"

1

Gamare, Karuna, and Ranjan Bala Jain. "Performance analysis of 2D photonic crystal with line defect." In INTERNATIONAL CONFERENCE ON INVENTIVE MATERIAL SCIENCE APPLICATIONS : ICIMA 2019. AIP Publishing, 2019. http://dx.doi.org/10.1063/1.5131598.

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Liu, Danyu, Haroldo T. Hattori, Lan Fu, Hoe Tan, and Chennupati Jagadish. "Analysis of multi-wavelength photonic crystal single-defect laser arrays." In 2010 23rd Annual Meeting of the IEEE Photonics Society (Formerly LEOS Annual Meeting). IEEE, 2010. http://dx.doi.org/10.1109/photonics.2010.5698980.

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Rieske, Ralf, Rene Landgraf, and Klaus-Jurgen Wolter. "Novel method for crystal defect analysis of laser drilled TSVs." In 2009 IEEE 59th Electronic Components and Technology Conference (ECTC 2009). IEEE, 2009. http://dx.doi.org/10.1109/ectc.2009.5074155.

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Sebastian, Elizabeth, Jie Zhu, and Zhi Qiang Mo. "Si Nano-Crystal Size and Structural Defect Characterization Using Electron Microscopes." In 2019 IEEE 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). IEEE, 2019. http://dx.doi.org/10.1109/ipfa47161.2019.8984809.

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Kittler, Martin, Tzanimir Arguirov, Reiner Schmid, Winfried Seifert, and Teimuraz Mchedlidze. "Photoluminescence and EBIC for Process Control and Failure Analysis in Si-Based Photovoltaics." In ISTFA 2010. ASM International, 2010. http://dx.doi.org/10.31399/asm.cp.istfa2010p0137.

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Abstract Crystalline silicon used for fabrication of solar cells, such as multicrystalline silicon (mc-Si), contains a high density of extended crystal defects. Since mc-Si wafers exhibit an inhomogeneous defect distribution, there is a need to combine the spectral capabilities with the ability of spatially resolving the defect areas. This paper reports application of luminescence and electron-beam-induced current (EBIC) techniques for characterization of defects in solar Si. The first part introduces luminescence features of defective Si and discusses application examples. The second part sta

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Shuting, Chen, Li Lihong, Du Anyan, and Hua Younan. "Study of Si Crystal Defects by Chemical Preferential Etching and Its Application on Si Dislocation Defects Caused by Laser Spike Annealing (LSA)." In ISTFA 2012. ASM International, 2012. http://dx.doi.org/10.31399/asm.cp.istfa2012p0293.

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Abstract In this work, delineation of crystal defects in Si by preferential chemical etching (Wright etch) is discussed. Investigation of defects in Si wafers by preferential chemical etching enables the study of various types of crystal defects for large area defect distribution (up to full wafer) and root cause analysis. In the case of dislocation defects, the shapes of etch pits are different for different etching duration. We show the mechanism of the pit shape evolution under preferential etching and suggested the appropriate etching duration for defect type identification with inspection

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Kalra, Yogita, Nishant Shankhwar, and Ravindra Sinha. "Dielectric zero-index metamaterial filled photonic crystal defect waveguide: design and analysis." In Metamaterials, Metadevices, and Metasystems 2018, edited by Nader Engheta, Mikhail A. Noginov, and Nikolay I. Zheludev. SPIE, 2018. http://dx.doi.org/10.1117/12.2320904.

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Lee, Sang Hun, Jeong Won Kang, Hyun Jung Oh, and Do Hyun Kim. "Simulation analysis for the ring patterned void defect in silicon mono crystal." In 2010 IEEE 10th Conference on Nanotechnology (IEEE-NANO). IEEE, 2010. http://dx.doi.org/10.1109/nano.2010.5697823.

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Martinez, R., S. Amirhaghi, B. Smith, et al. "Towards the production of very low defect GaSb and InSb substrates: bulk crystal growth, defect analysis and scaling challenges." In SPIE OPTO, edited by Manijeh Razeghi. SPIE, 2013. http://dx.doi.org/10.1117/12.2005130.

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Landgraf, R., R. Rieske, A. N. Danilewsky, and K. J. Wolter. "Laser drilled through silicon vias: Crystal defect analysis by synchrotron x-ray topography." In 2008 2nd Electronics Systemintegration Technology Conference. IEEE, 2008. http://dx.doi.org/10.1109/estc.2008.4684492.

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Reports on the topic "Crystal defect analysis"

1

Yazici, R., and D. Kalyon. Microstrain and Defect Analysis of CL-20 Crystals by Novel X-Ray Methods. Defense Technical Information Center, 1996. http://dx.doi.org/10.21236/ada311738.

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Kirchhoff, Helmut, and Ziv Reich. Protection of the photosynthetic apparatus during desiccation in resurrection plants. United States Department of Agriculture, 2014. http://dx.doi.org/10.32747/2014.7699861.bard.

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In this project, we studied the photosynthetic apparatus during dehydration and rehydration of the homoiochlorophyllous resurrection plant Craterostigmapumilum (retains most of the photosynthetic components during desiccation). Resurrection plants have the remarkable capability to withstand desiccation, being able to revive after prolonged severe water deficit in a few days upon rehydration. Homoiochlorophyllous resurrection plants are very efficient in protecting the photosynthetic machinery against damage by reactive oxygen production under drought. The main purpose of this BARD project was

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