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Journal articles on the topic 'Couloir de mobilité'

Author: Grafiati
Published: 25 May 2024

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1

Bovey, Laurent. "De la classe spéciale à la classe régulière." Revue suisse de pédagogie spécialisée 14, no. 01 (March 7, 2024): 13–19. http://dx.doi.org/10.57161/r2024-01-03.

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Depuis une vingtaine d’années en Suisse, le « taux de séparation scolaire », c’est-à-dire le nombre d’élèves scolarisés en classe spéciale ou en établissement de pédagogie spécialisée, ne cesse de diminuer. Une partie des classes spéciales ont fermé et les élèves ont été réintégrés en classe régulière. Une autre partie de ces classes ont été transformées en dispositifs plus flexibles favorisant une plus grande mobilité des élèves. Deux recherches menées auprès d’élèves bénéficiant de mesures de pédagogie spécialisée dans le canton de Vaud montrent qu’une partie de ces élèves restent dans les faits séparés à l’intérieur des classes régulières, au fond de la classe, dans le couloir, dans un local de dégagement ou accompagnés une grande partie du temps par des enseignants et enseignantes spécialisées ou des assistants et assistantes à l’intégration. En outre, les élèves (ré)intégrés sont soumis à de nombreuses attentes comportementales et sont évalués en permanence, ce qui les pousse à mettre en place des stratégies complexes pour s’adapter aux exigences de la classe régulière.
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2

Nagy, Raluca. "Tourisme et migration dans le Maramureş." Ethnologies 31, no. 1 (November 9, 2009): 111–26. http://dx.doi.org/10.7202/038502ar.

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Dans cet article nous entreprenons de souligner la liaison entre deux formes de mobilité, tourisme rural et migration de travail, à travers quelques points d’articulation. Dans le cas du Maramureş, une région du nord de la Roumanie, on se trouve devant deux types de « couloirs de mobilité », vers et à partir de la région. Ces couloirs se superposent au niveau des pratiques autant qu’au niveau des réseaux et des ressources. Les cinq points plus concrets qu’on va aborder ici sont la circulation de l’argent, le rôle des médiateurs culturels des migrants, la question du confort et la façon d’investir dans les maisons, la problématique de la latinité et finalement l’angle terminologique, notamment le continuum tourisme — migration.
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3

Potbhare, Siddharth, Gary Pennington, Neil Goldsman, Aivars J. Lelis, Daniel B. Habersat, F. Barry McLean, and J. M. McGarrity. "Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation." Materials Science Forum 527-529 (October 2006): 1321–24. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1321.

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A physics based device simulator for detailed numerical analysis of 4H-SiC MOSFETs with an advanced mobility model that accounts for the effects of bulk and surface phonons, surface roughness and Coulomb scattering by occupied interface traps and fixed oxide charges, has been developed. A first principles quasi-2D Coulomb scattering mobility model specifically for SiC MOSFETs has been formulated. Using this, we have been able to extract the interface trap density of states profile for 4H-SiC MOSFETs and have shown that at room temperature, Coulomb scattering controls the total mobility close to the interface. High temperature, low field simulations and experiments show that the current increases with increase in temperature. The effect of Coulomb scattering decreases with increase in temperature causing an increase in the total mobility near the interface at low gate voltages.
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4

Pérez-Tomás, Amador, Michael R. Jennings, Philip A. Mawby, James A. Covington, Phillippe Godignon, José Millan, and Narcis Mestres. "SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps." Materials Science Forum 556-557 (September 2007): 835–38. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.835.

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In prior work we have proposed a mobility model for describing the mobility degradation observed in SiC MOSFET devices, suitable for being implemented into a commercial simulator, including Coulomb scattering effects at interface traps. In this paper, the effect of temperature and doping on the channel mobility has been modelled. The computation results suggest that the Coulomb scattering at charged interface traps is the dominant degradation mechanism. Simulations also show that a temperature increase implies an improvement in field-effect mobility since the inversion channel concentration increases and the trapped charge is reduced due to bandgap narrowing. In contrast, increasing the substrate impurity concentration further degrades the fieldeffect mobility since the inversion charge concentration decreases for a given gate bias. We have good agreement between the computational results and experimental mobility measurements.
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5

Ji, Qizheng, Jun Liu, Ming Yang, Xiaofeng Hu, Guangfu Wang, Menglin Qiu, and Shanghe Liu. "Influence of Proton Irradiation Energy on Gate–Channel Low-Field Electron Mobility in AlGaN/GaN HEMTs." Electronics 12, no. 6 (March 20, 2023): 1473. http://dx.doi.org/10.3390/electronics12061473.

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AlGaN/GaN high-electron-mobility transistors (HEMTs) with two different gate–drain distances (30 μm and 10 μm) were exposed to 1 MeV, 0.6 MeV, and 0.4 MeV protons at a fluence of 2.16 × 1012 cm−2. The gate–channel electron density and low-field mobility were obtained by measuring the capacitance–voltage characteristics and current–voltage characteristics. After proton irradiation, the gate–channel low-field electron mobility of the AlGaN/GaN HEMT with a 30 μm gate–drain distance increases and that with a 10 μm gate–drain distance decreases. It is studied and found that the mobility behavior is related to the polarization Coulomb field scattering, and the proton irradiation influences the intensity of the polarization Coulomb field scattering by changing the polarization/strain distribution in the barrier layer. The different gate–drain distances correspond to different variation trends of scattering intensity. The effect of 1 MeV protons on the barrier layer is smaller compared with 0.6 MeV and 0.4 MeV protons, so the mobility variation is smaller.
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6

Pérez-Tomás, Amador, Miquel Vellvehi, Narcis Mestres, José Millan, P. Vennegues, and J. Stoemenos. "Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFETs Measured in Strong Inversion." Materials Science Forum 527-529 (October 2006): 1059–62. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1059.

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A high field-effect mobility peak (50 cm2/Vs) has been extracted in (0001) Si face 4HSiC MOSFETs with oxidized Ta2Si (O-Ta2Si) high-k dielectric (k~20) as gate insulator, with their gates in the strong inversion regime. The interface state density (Dit) has not been particularly reduced in O-Ta2Si capacitors. This anomalous mobility enhancement is explained in terms of Coulomb scattering reduction and quantified using a physical model based on the Lombardi mobility model. The anomalous mobility increase is closely related to the leakage current, and also to the gate breakdown mechanism. We propose a model for which the observed interfacial SiO2 tunnel current combined with Poole-Frenkel mechanisms at the O-Ta2Si gate generates a sufficiently low abrupt transition in gate breakdown to obtain an effective passivation of the interface traps. Under these conditions, the increase of free carriers in the inversion layer induced by the gate leakage diminishes the effect of the interface trap Coulomb scattering.
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7

Chen, W. P. N., Pin Su, and K. I. Goto. "Investigation of Coulomb Mobility in Nanoscale Strained PMOSFETs." IEEE Transactions on Nanotechnology 7, no. 5 (September 2008): 538–43. http://dx.doi.org/10.1109/tnano.2008.2004771.

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8

Driussi, Francesco, and David Esseni. "Simulation Study of Coulomb Mobility in Strained Silicon." IEEE Transactions on Electron Devices 56, no. 9 (September 2009): 2052–59. http://dx.doi.org/10.1109/ted.2009.2026394.

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9

Walczak, Jakub, and Bogdan Majkusiak. "Scattering mechanisms in MOS/SOI devices with ultrathin semiconductor layers." Journal of Telecommunications and Information Technology, no. 1 (March 30, 2004): 39–49. http://dx.doi.org/10.26636/jtit.2004.1.230.

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Main scattering mechanisms affecting electron transport in MOS/SOI devices are considered within the quantum-mechanical approach. Electron mobility components (i.e., phonon, Coulomb and interface roughness limited mobilities) are calculated for ultrathin symmetrical DG SOI transistor, employing the relaxation time approximation, and the effective electron mobility is obtained showing possible mobility increase relative to the conventional MOSFET in the range of the active semiconductor layer thickness of about 3 nm.
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10

Ihlenborg, Marvin, Ann-Kathrin Schuster, Jürgen Grotemeyer, and Frank Gunzer. "Measuring the effects of Coulomb repulsion via signal decay in an atmospheric pressure laser ionization ion mobility spectrometer." European Journal of Mass Spectrometry 24, no. 4 (March 2, 2018): 330–36. http://dx.doi.org/10.1177/1469066718761585.

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Using lasers in ion mobility spectrometry offers a lot of advantages compared to standard ionization sources. Especially, the ion yield can be drastically increased. It can, however, reach levels where the Coulomb repulsion leads to unwanted side effects. Here, we investigate how the Coulomb repulsion can be detected apart from the typical signal broadening by measuring effects created already in the reaction region and comparing them with corresponding finite element method simulations.
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11

Sanquer, M., M. Specht, L. Ghenim, S. Deleonibus, and G. Guegan. "Coulomb blockade in low-mobility nanometer size Si MOSFET’s." Physical Review B 61, no. 11 (March 15, 2000): 7249–52. http://dx.doi.org/10.1103/physrevb.61.7249.

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12

Vincens, Marion, Marie-Hélène Vandersmissen, and Marius Thériault. "Impacts de la restructuration du réseau d’autobus de la ville de Québec sur l’accessibilité aux emplois des femmes et sur leur mobilité professionnelle." Cahiers de géographie du Québec 51, no. 144 (February 19, 2008): 419–46. http://dx.doi.org/10.7202/017628ar.

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Résumé Le réseau d’autobus de la ville de Québec a subi une importante restructuration en 1992 avec la création du Métrobus et l’ajout de lignes express. L’objectif de cet article est de vérifier si la restructuration de ce réseau a permis d’améliorer l’accessibilité aux emplois des résidentes et de favoriser leur mobilité professionnelle. Les données des enquêtes origine-destination de 1991 et 2001 réalisées par le ministère des Transports du Québec et le Réseau de transport de la Capitale sont mises à profit. Les variations spatiales et temporelles des différents indicateurs montrent une diminution sensible des durées de déplacement et une amélioration de l’accessibilité aux emplois à partir de certains secteurs de la ville et ce, en dépit d’une diminution de la part modale de l’autobus, même dans les couloirs du Métrobus. Par ailleurs, la mobilité professionnelle des femmes semble avoir progressé dans plusieurs secteurs desservis par le Métrobus.
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13

Cui, Peng, and Yuping Zeng. "Effect of Device Scaling on Electron Mobility in Nanoscale GaN HEMTs with Polarization Charge Modulation." Nanomaterials 12, no. 10 (May 18, 2022): 1718. http://dx.doi.org/10.3390/nano12101718.

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We have experimentally investigated the impact of vertical and lateral scaling on low-field electron mobility (µ) in InAlN/GaN high-electron-mobility transistors (HEMTs). It is found that µ reduces as InAlN barrier (TB) and gate length (LG) scale down but increases with the scaled source–drain distance (LSD). Polarization Coulomb Field (PCF) scattering is believed to account for the scaling-dependent electron mobility characteristic. The polarization charge distribution is modulated with the vertical and lateral scaling, resulting in the changes in µ limited by PCF scattering. The mobility characteristic shows that PCF scattering should be considered when devices scale down, which is significant for the device design and performance improvement for RF applications.
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14

Matocha, Kevin, and Vinayak Tilak. "Understanding the Inversion-Layer Properties of the 4H-SiC/SiO2 Interface." Materials Science Forum 679-680 (March 2011): 318–25. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.318.

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The performance of 4H-SiC power MOSFETs is limited by the less than ideal electron inversion-layer mobility due to the poor quality of the SiC-SiO2 interface. This poor interface causes several undesirable behaviors of the electrical performance of SiC MOSFETs, including: (1) strong shifts in the threshold voltage with temperature, (2) low channel mobility and (3) strong sensitivity of the mobility to the channel doping concentration. These features are explained by a high density of interface states, the high surface electric field induced in SiC inversion layers, and the combined effectsa combination of Coulomb and surface roughness scattering.
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15

Mortet, V., E. Bedel-Pereira, J. F. Bobo, F. Cristiano, Christian Strenger, V. Uhnevionak, A. Burenkov, and A. J. Bauer. "Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation." Materials Science Forum 740-742 (January 2013): 525–28. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.525.

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Effect of a shallow nitrogen implantation in the channel region of n-channel 4H-SiC Hall bar MOSFETs on their electrical properties has been characterized by Hall effect. A significant improvement of Hall mobility in normally-off devices is observed with increasing nitrogen implantation dose up to 1013cm-2with a peak Hall mobility of 42.4 cm2.V-1.s-1. Coulomb scattering as dominant scattering mechanism up to room temperature is demonstrated using temperature dependent MOS-Hall effect characterization.
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16

Rao, R. Ramakrishna, Kevin Matocha, and Vinayak Tilak. "Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs." Materials Science Forum 615-617 (March 2009): 797–800. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.797.

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The mobility of electrons in the inversion layer of 4H-Silicon Carbide (SiC) MOSFETs is lower than the ideal value due to the various scattering mechanisms that takes place at the surface. These scattering mechanisms are strong function of both the interface-trapped charge density and inversion-layer electron density. In this work, we develop a quasi-charge-sheet model to quantify coulomb scattering due to interface trapped-charge in SiC MOSFET inversion layers and calculate the inversion layer electron mobility.
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17

Liu, Dongyang, Jiawei Wang, Chong Bi, Mengmeng Li, Nianduan Lu, Zhekai Chen, and Ling Li. "Lattice Relaxation Forward Negative Coulomb Drag in Hopping Regime." Electronics 11, no. 8 (April 17, 2022): 1273. http://dx.doi.org/10.3390/electronics11081273.

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Quasi-particle formed by electron and the dressed deformed lattice is important to accurately interpret the properties of various disordered/amorphous materials. However, a unified understanding of the drag effect, in particular the negative Coulomb drag in hopping systems, remains an open challenge. This work proposes a theoretic framework to account for both positive and negative Coulomb drag in dual-1D-hopping systems by considering both the electron-electron correlation and the electron-phonon correlation. It is found that lattice relaxation in the active line of the hopping system may give rise to an inverse energetic pumping force in the passive line, causing negative Coulomb drag. The mobility of the negative coulomb drag can approach the scale of 10−5cm2V−1s−1, especially at low temperature, high carrier-density, and narrow inter-spacing separation. More intriguingly, the positive drag could be recovered by varying the energy fluctuation and suppressing the electron-phonon interactions, but with a much lower magnitude. Our work could serve as a universal model for the Coulomb drag effect in the hopping system.
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18

Strenger, Christian, Viktoryia Uhnevionak, Vincent Mortet, Guillermo Ortiz, Tobias Erlbacher, Alexander Burenkov, A. J. Bauer, et al. "Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs." Materials Science Forum 778-780 (February 2014): 583–86. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.583.

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In this work, we investigate the impact of Al-implantation into n-MOSFET channel regions together with its p-doping concentration upon the mobility limiting scattering mechanisms in the channel. For this purpose, a study of the interface trap density, interface trapped charge density, field-effect mobility, and Hall mobility is carried out for normally-off n-MOSFETs with different doping profiles and concentrations in the channel region. The trend of the field-effect and the Hall mobility as well as the differences thereof will be discussed. Based on the determined mobilities in the range from 11.9 cm2/Vs to 92.4 cm2/Vs, it will be shown that for p-doping concentrations above 5·1016 cm-3 Coulomb scattering is the dominant scattering mechanism for both, low- and high-field mobility. In contrast, for p-doping concentrations below 5·1016, cm-3 further scattering mechanisms will be considered that may account for the observed mobility trend at high electric fields.
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19

Liu, Yan, Zhao-Jun Lin, Ming Yang, Chong-Biao Luan, Yu-Tang Wang, Yuan-Jie Lv, and Zhi-Hong Feng. "Effect of polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors." Modern Physics Letters B 30, no. 35 (December 20, 2016): 1650411. http://dx.doi.org/10.1142/s021798491650411x.

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The electron mobility of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with the ratio of the gate length to the drain-to-source distance being less than 1/2 has been studied in the temperature range 100 [Formula: see text] 300 K. The measured electron mobility at each testing temperature is obtained by using the capacitance–voltage (C–V) and current–voltage (I–V) characteristics measured at the corresponding temperature, and the theoretically calculated temperature-dependent electron mobility is determined by Matthiessen’s law, which includes five kinds of important scattering mechanisms. For the prepared sample, the measured electron mobility with respect to the two-dimensional electron gas (2DEG) density was observed to increase to a peak point first and then decrease at each testing temperature. By comparing the measured electron mobility with the theoretically calculated value, the changing trend of the electron mobility at each testing temperature was found to be mainly determined by polarization Coulomb field (PCF) scattering. Particularly at lower temperature, PCF scattering plays a more significant role in the changing trend of the electron mobility.
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20

Kutsuki, Katsuhiro, Sachiko Kawaji, Yukihiko Watanabe, Shinichiro Miyahara, and Jun Saito. "Improved Evaluation Method for Channel Mobility in SiC Trench MOSFETs." Materials Science Forum 821-823 (June 2015): 757–60. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.757.

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We proposed an improved method for evaluating the effective channel mobility (μeff), involving an appropriate definition of the threshold voltage (Vth) based on the ideal gate bias voltage – drain current (VG-ID) characteristics. Using this method, the dependence of μeff on the effective field (Eeff) could be evaluated even for SiC trench MOSFETs with large interface state density (Dit) values. The dominant influence on μeff in the low Eeff region was found to be Coulomb scattering caused by interface states at the SiC/SiO2 interfaces.
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21

Rudenko, Tamara, R. Yu, S. Barraud, K. Cherkaoui, P. Razavi, G. Fagas, and A. N. Nazarov. "On the Mobility Behavior in Highly Doped Junctionless Nanowire SOI MOSFETs." Advanced Materials Research 854 (November 2013): 35–43. http://dx.doi.org/10.4028/www.scientific.net/amr.854.35.

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The electron mobility in highly-doped junctionless (JL) nanowire (NW) silicon-on-isulator (SOI) MOSFETs with various nanowire widths is experimentally studied and analyzed. The evidence for the considerable enhancement of the effective electron mobility in narrow NW devices as compared to counterpart planar (wide) devices, having the same film thickness and doping, and as compared to the bulk silicon mobility with the same doping is presented. This mobility enhancement increases with decreasing the NW width. The reason for this effect is considered to be reduction of the impurity Coulomb scattering in narrow NW MOSFETs due to: (i) the reduced depletion-layer width; (ii) stronger screening of ionized impurities; (iii) the reduced number of neighbor ionized doping atoms per each free carrier in very narrow NWs. These results are of great importance since mobility degradation due to high doping was considered to be one of the most important limitations of the JL NW MOSFETs.
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22

Yang, Yu, Franz A. Koeck, Xingye Wang, and Robert J. Nemanich. "Surface transfer doping of MoO3 on hydrogen terminated diamond with an Al2O3 interfacial layer." Applied Physics Letters 120, no. 19 (May 9, 2022): 191602. http://dx.doi.org/10.1063/5.0083971.

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A thin layer of Al2O3 was employed as an interfacial layer between surface conductive hydrogen-terminated (H-terminated) diamond and MoO3 to increase the distance between the hole accumulation layer in diamond and negatively charged states in the acceptor layer and, thus, reduce the Coulomb scattering and increase the hole mobility. The valence band offsets are found to be 2.7 and 3.1 eV for Al2O3/H-terminated diamond and MoO3/H-terminated diamond, respectively. Compared to the MoO3/H-terminated diamond structure, a higher hole mobility was achieved with Al2O3 inserted as an interface layer. This work provides a strategy to achieve increased hole mobility of surface conductive diamond by using optimal interlayer along with high high electron affinity surface acceptor materials.
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23

Yang, Yongxiong, Yuanjie Lv, Zhaojun Lin, Guangyuan Jiang, and Yang Liu. "Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I–V Characteristics." Electronics 9, no. 10 (October 19, 2020): 1719. http://dx.doi.org/10.3390/electronics9101719.

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A physics-based model for the output current–voltage (I–V) characteristics of AlGaN/GaN HFETs is developed based on AlGaAs/GaAs HFETs. It is demonstrated that Polarization Coulomb Field (PCF) scattering greatly influences channel electron mobility. With different gate biases, channel electron mobility is varied by PCF scattering. Furthermore, a more negative gate bias and a lower ratio of lg/lsd (gate length/source-drain space) of the device causes the PCF scattering to have stronger influence on channel electron mobility. This work is the first to apply PCF scattering to a physics-based model for AlGaN/GaN HFETs with I–V characteristics and the results indicate that PCF scattering is essential for a physics-based model to identify I–V characteristics of AlGaN/GaN HFETs.
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Chen, Siheng, Peng Cui, Mingsheng Xu, Zhaojun Lin, Xiangang Xu, Yuping Zeng, and Jisheng Han. "Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment." Crystals 12, no. 11 (October 26, 2022): 1521. http://dx.doi.org/10.3390/cryst12111521.

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An enhancement of the electrical performance of the InAlN/GaN high electron mobility transistors (HEMTs) is demonstrated by the incorporation of post bis(trifluoromethane) sulfonamide (TFSI) treatment. The surface treatment of TFSI solution results in the increase of 2DEG electron mobility from 1180 to 1500 cm2/Vs and thus a reduction of on-state resistance and an increase in transconductance. The results indicate that the positive charge of H+ will decrease the polarization charges of the InAlN barrier under the access region due to the converse piezoelectric effect, leading to the reduced polarization Coulomb field (PCF) scattering in InAlN/GaN HEMT. This offers a possible way to improve the electron mobility and device performance of InAlN/GaN HEMTs for further application.
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25

Hatakeyama, Tetsuo, Hirohisa Hirai, Mitsuru Sometani, Dai Okamoto, Mitsuo Okamoto, and Shinsuke Harada. "Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs." Journal of Applied Physics 131, no. 14 (April 14, 2022): 145701. http://dx.doi.org/10.1063/5.0086172.

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In this work, the origin of the low free electron mobility in SiC MOSFETs is investigated using the scattering theory of two-dimensional electron gases. We first establish that neither phonon scattering nor Coulomb scattering can be the cause of the low observed mobility in SiC MOSFETs; we establish this fact by comparing the theoretically calculated mobility considering these effects with experimental observations. By considering the threshold voltages and the effective field dependence of the mobility in SiC MOSFETs, it is concluded that the scattering centers of the dominant mechanism are electrically neutral and exhibit a short-range scattering potential. By considering a charge distribution around a neutral defect at the interface, it is established that an electric dipole induced by the defect can act as a short-range scattering potential. We then calculate the mobility in SiC MOSFETs assuming that there exists a high density of dipoles at the interface. The calculated dipole-scattering-limited mobility shows a similar dependence on the effective field dependence to that observed in experimental results. Thus, we conclude that scattering induced by a high density of electric dipoles at the interface is the dominant cause of the low mobility in SiC MOSFETs.
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Zhao, Yi, Mitsuru Takenaka, and Shinichi Takagi. "Comprehensive Understanding of Coulomb Scattering Mobility in Biaxially Strained-Si pMOSFETs." IEEE Transactions on Electron Devices 56, no. 5 (May 2009): 1152–56. http://dx.doi.org/10.1109/ted.2009.2015170.

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27

Harrysson Rodrigues, Isabel, Andrey Generalov, Miika Soikkeli, Anton Murros, Sanna Arpiainen, and Andrei Vorobiev. "Geometrical magnetoresistance effect and mobility in graphene field-effect transistors." Applied Physics Letters 121, no. 1 (July 4, 2022): 013502. http://dx.doi.org/10.1063/5.0088564.

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Further development of graphene field-effect transistors (GFETs) for high-frequency electronics requires accurate evaluation and study of the mobility of charge carriers in a specific device. Here, we demonstrate that the mobility in the GFETs can be directly characterized and studied using the geometrical magnetoresistance (gMR) effect. The method is free from limitations of other approaches since it does not require an assumption of the constant mobility and the knowledge of the gate capacitance. Studies of a few sets of GFETs in the wide range of transverse magnetic fields indicate that the gMR effect dominates up to approximately 0.55 T. In higher fields, the physical magnetoresistance effect starts to contribute. The advantages of the gMR approach allowed us to interpret the measured dependencies of mobility on the gate voltage, i.e., carrier concentration, and identify the corresponding scattering mechanisms. In particular, the range of the fairly constant mobility is associated with the dominating Coulomb scattering. The decrease in mobility at higher carrier concentrations is associated with the contribution of the phonon scattering. Analysis shows that the gMR mobility is typically 2–3 times higher than that found via the commonly used drain resistance model. The latter underestimates the mobility since it does not take the interfacial capacitance into account.
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28

CHEN, YONG-CONG. "A DILUTE NEUTRAL-CLUSTER APPROXIMATION FOR THE QUANTUM WASHBOARD POTENTIAL." International Journal of Modern Physics B 07, no. 22 (October 10, 1993): 3907–26. http://dx.doi.org/10.1142/s021797929300353x.

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We study the mobility of a quantum particle in a biased cosine potential V(x)= V0 cos (k0x)–Fx and subject to an Ohmic-like dissipation. It is found that for [Formula: see text], there exists a set of discrete points αp=2p/(2p–1) at which the series for the mobility in powers of V0 may be partially summed via a dilute neutral-cluster approximation (in the sense that the coefficients are viewed as 1-d Coulomb chains). Detailed analyses are carried out for p=1 and 2, with p=1 recovering the so-called dilute-dipole approximation in a general way. In addition, the zero-temperature coefficients of [Formula: see text] and [Formula: see text] for the linear mobility are proved to be rigorously zero for α<1.
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29

Lee, K., Benedetto Buono, Martin Domeij, and Jimmy Franchi. "TCAD Modeling of a 1200 V SiC MOSFET." Materials Science Forum 924 (June 2018): 689–92. http://dx.doi.org/10.4028/www.scientific.net/msf.924.689.

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In this work, TCAD modeling of a 1200 V SiC MOSFET is presented. The main focus is on modeling of the channel mobility, and the Coulomb scattering by interface traps and surface roughness are therefore included. For the Coulomb scattering, the interface trap profiles have been extrapolated from the subthreshold characteristics at room temperature, whereas the scattering due to surface roughness has been fitted by comparing to the transfer characteristics at high gate bias. A comparison with measurements for the transfer characteristic and the output characteristic is also presented. Results show that the reduction of the threshold voltage with increasing temperature and the temperature dependence of the output characteristics are properly modeled.
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30

OKTYABRSKY, S., P. NAGAIAH, V. TOKRANOV, M. YAKIMOV, R. KAMBHAMPATI, S. KOVESHNIKOV, D. VEKSLER, N. GOEL, and G. BERSUKER. "ELECTRON SCATTERING IN BURIED InGaAs/HIGH-K MOS CHANNELS." International Journal of High Speed Electronics and Systems 20, no. 01 (March 2011): 95–103. http://dx.doi.org/10.1142/s012915641100643x.

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Hall electron mobility in buried QW InGaAs channels, grown on InP substrates with HfO 2 gate oxide, is analyzed experimentally and theoretically as a function of top barrier thickness and composition, carrier density, and temperature. Temperature slope α in μ ~Tα dependence is changing from α=-1.1 to +1 with the reduction of the top barrier thickness indicating the dominant role of remote Coulomb scattering (RCS) in interface-related contribution to mobility degradation. Insertion of low-k SiO x interface layer formed by oxidation of thin in-situ MBE grown amorphous Si passivation layer has been found to improve the channel mobility, but at the expense of increased EOT. This mobility improvement is also consistent with dominant role of RCS. We were able to a obtain a reasonable match between experiment and simple theory of the RCS assuming the density of charges at the high-k/barrier interface to be in the range of (2-4)×1013 cm-2.
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31

GOLD, A., and O. ANTONIE. "MAGNETORESISTANCE OF A SILICON MOSFET ON THE (111) SURFACE IN A PARALLEL MAGNETIC FIELD." International Journal of Modern Physics B 21, no. 08n09 (April 10, 2007): 1529–34. http://dx.doi.org/10.1142/s0217979207043142.

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In comparison with silicon (100) we argue that the silicon (111) surface is a surface with higher mobility and stronger Coulomb interaction effects. For the resistance of the two-dimensional electron gas we discuss the effects of a magnetic field parallel to the surface: for zero temperature we present theoretical results for the magnetoresistance of an electron gas at the surface of silicon (111) with a six-fold valley degeneracy. Impurity scattering and interface roughness scattering are taken into account. A recent study of a hydrogen-passivated silicon (111) surface showed a mobility proportional to the electron density. We present, using a model for neutral impurities, predictions for the magnetoresistance of this sample in a parallel magnetic field.
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32

Давыдов, С. Ю., and А. А. Лебедев. "Влияние адсорбированной макромолекулы на подвижность носителей в однослойном графене: модель оборванных связей." Физика и техника полупроводников 57, no. 5 (2023): 392. http://dx.doi.org/10.21883/ftp.2023.05.56210.4958.

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Within the framework of the previously proposed model (S.Yu. Davydov. Phys. Solid State 64, 2018 (2022)), in which the interaction of a macromolecule (MM) with single-layer graphene (SLG) is carried out by stitching of dangling MM bonds with carbon atoms, the effect of these stitching on the mobility of carriers in graphene was studied. It is shown that short-range scattering of MM-SLG stitching prevails over Coulomb scattering. It has also been found that the effect of induced by stitching graphene deformation on mobility can be neglected compared to short-range scattering. The cases of free and epitaxial graphene are considered. The use of the MM-SLG-substrate structure as the basis of a biosensor is discussed.
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33

Han, Kai, Xiaolei Wang, Jinjuan Xiang, Lixing Zhou, Jiazhen Zhang, Yanrong Wang, Xueli Ma, et al. "Evaluation of hole mobility degradation by remote Coulomb scattering in Ge pMOSFETs." Semiconductor Science and Technology 34, no. 7 (June 12, 2019): 075009. http://dx.doi.org/10.1088/1361-6641/ab2167.

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34

Curran, Anya, Farzan Gity, Agnieszka Gocalinska, Enrica Mura, Roger E. Nagle, Michael Schmidt, Brendan Sheehan, Emanuele Pelucchi, Colm O’Dwyer, and Paul K. Hurley. "High Hole Mobility Polycrystalline GaSb Thin Films." Crystals 11, no. 11 (November 5, 2021): 1348. http://dx.doi.org/10.3390/cryst11111348.

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In this paper, we report on the structural and electronic properties of polycrystalline gallium antimonide (poly-GaSb) films (50–250 nm) deposited on p+ Si/SiO2 by metalorganic vapour phase epitaxy at 475 °C. GaSb films grown on semi-insulating GaAs substrates are included as comparative samples. In all cases, the unintentionally doped GaSb is p-type, with a hole concentration in the range of 2 × 1016 to 2 × 1017 cm−3. Exceptional hole mobilities are measured for polycrystalline GaSb on SiO2 in the range of 9–66 cm2/Vs, exceeding the reported values for many other semiconductors grown at low temperatures. A mobility of 9.1 cm2/Vs is recorded for an amorphous GaSb layer in a poly-GaAs/amorphous GaSb heterostructure. Mechanisms limiting the mobility in the GaSb thin films are investigated. It is found that for the GaSb grown directly on GaAs, the mobility is phonon-limited, while the GaSb deposited directly on SiO2 has a Coulomb scattering limited mobility, and the poly-GaAs/amorphous GaSb heterostructure on SiO2 displays a mobility which is consistent with variable-range-hopping. GaSb films grown at low temperatures demonstrate a far greater potential for implementation in p-channel devices than for implementation in ICs.
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35

Tsujimura, Masatoshi, Hidenori Kitai, Hiromu Shiomi, Kazutoshi Kojima, Kenji Fukuda, Kunihiro Sakamoto, Kimiyoshi Yamasaki, Shin-Ichi Takagi, and Hajime Okumura. "Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C–V Measurement." Materials Science Forum 858 (May 2016): 441–44. http://dx.doi.org/10.4028/www.scientific.net/msf.858.441.

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In this study, 4H–SiC inversion layers were experimentally evaluated by Hall and split C–V measurements, and scattering mechanisms related to gate oxide nitridation were analyzed. Three typical samples with different crystal plane directions and gate oxidation conditions were prepared, and their total trap density and Hall mobility were compared. Based on the temperature dependence of the Hall mobility, we found that scattering mechanisms differed for each sample. The sample C-face oxynitride which had a high nitrogen density at the metal–oxide–semiconductor (MOS) interface, showed a similar temperature dependency to that of ionized impurity scattering. This result suggests that high-density nitrogen acts as donors that supply free carriers and cause ionized impurity scattering, just like in a bulk crystal. In addition, the sample C-face wet has lowest influence of the Coulomb scattering because of the lowest temperature dependence of Hall mobility and the lowest total trap density.
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36

Zhou, Lixing, Jinjuan Xiang, Xiaolei Wang, and Wenwu Wang. "Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeO x /Al2O3 gate stack by ozone oxidation." Journal of Semiconductors 43, no. 1 (January 1, 2022): 013101. http://dx.doi.org/10.1088/1674-4926/43/1/013101.

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Abstract Ge has been an alternative channel material for the performance enhancement of complementary metal–oxide–semiconductor (CMOS) technology applications because of its high carrier mobility and superior compatibility with Si CMOS technology. The gate structure plays a key role on the electrical property. In this paper, the property of Ge MOSFET with Al2O3/GeO x /Ge stack by ozone oxidation is reviewed. The GeO x passivation mechanism by ozone oxidation and band alignment of Al2O3/GeO x /Ge stack is described. In addition, the charge distribution in the gate stack and remote Coulomb scattering on carrier mobility is also presented. The surface passivation is mainly attributed to the high oxidation state of Ge. The energy band alignment is well explained by the gap state theory. The charge distribution is quantitatively characterized and it is found that the gate charges make a great degradation on carrier mobility. These investigations help to provide an impressive understanding and a possible instructive method to improve the performance of Ge devices.
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37

Kittler, Martin, Manfred Reiche, and Hans Michael Krause. "Charge Carrier Transport along Grain Boundaries in Silicon." Solid State Phenomena 205-206 (October 2013): 293–98. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.293.

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The influence of GBs contained in the channel of MOS-FETs - fabricated in thin SOI layers - is demonstrated. The drain current measured at room temperature increases about 50 times for nFETs and about 10 times for pFETs, respectively, as compared to reference devices. The observations might be interpreted as a strong increase of the mobility of charge carriers. Moreover, the observed stepwise changes of the drain current at 5 K may point to Coulomb blockades.
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38

Поклонский, Н. А., С. А. Вырко, and А. Н. Деревяго. "Квазиклассическая модель статической электропроводности сильно легированных вырожденных полупроводников при низких температурах." Физика и техника полупроводников 52, no. 6 (2018): 544. http://dx.doi.org/10.21883/ftp.2018.06.45913.8651.

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AbstractGermanium, silicon, gallium arsenide, and indium antimonide n -type crystals on the metal side of the insulator–metal transition (Mott transition) are considered. In the quasi-classical approximation, the static (direct current) electrical conductivity and the drift mobility of electrons of the c band, and electrostatic fluctuations of their potential energy and the mobility edge are calculated. It is considered that a single event of the elastic Coulomb scattering of a mobile electron occurs only in a spherical region of the crystal matrix with an impurity ion at the center. The results of calculations using the proposed formulas without using fitting parameters are numerically consistent with experimental data in a wide range of concentrations of hydrogenlike donors at their weak and moderate compensation by acceptors.
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39

Tilak, Vinayak, Kevin Matocha, Greg Dunne, Fredrik Allerstam, and Einar Ö. Sveinbjörnsson. "Scattering Mechanisms in Silicon Carbide MOSFETs with Gate Oxides Fabricated Using Sodium Enhanced Oxidation Technique." Materials Science Forum 600-603 (September 2008): 687–90. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.687.

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The improvement of the SiC-SiO2 interface has been the main focus of research in SiC MOSFET technology due to the presence of high density of interface traps (Dit) leading to poor threshold voltage temperature stability and poor mobility. In SiC MOSFETs with the gate oxide grown in the presence of sodium, known as sodium enhanced oxidation(SEO), a lower Dit and higher field effect mobility has been observed [1]. Hall effect measurements were performed from 125°K-225°K on such MOSFET samples. The Hall measurements were made as a function of temperature for various sheet charge concentrations. The sheet charge density was measured as a function of gate bias at 225°K and there is very little trapped charge in the sample with oxide grown by SEO while about 50 % of the total charge is trapped in a sample with N2O grown oxide annealed in NO. In samples with oxide grown by SEO, there is a monotonic increase in mobility with sheet charge density and the mobility also increases with temperature. This is an indication that the main scattering mechanism is Coulomb scattering in this regime.
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40

Протасов, Д. Ю., А. К. Бакаров, А. И. Торопов, Б. Я. Бер, Д. Ю. Казанцев, and К. С. Журавлев. "Подвижность двумерного электронного газа в DA-pHEMT гетроструктурах с различной шириной профиля delta-n-слоев." Физика и техника полупроводников 52, no. 1 (2018): 48. http://dx.doi.org/10.21883/ftp.2018.01.45318.8610.

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AbstractThe effect of the silicon-atom distribution profile in donor δ-layers of AlGaAs/InGaAs/AlGaAs heterostructures with donor–acceptor doping on the mobility of the two-dimensional electron gas is studied. The parameters of the δ-layer profiles are determined using the normal approximation of the spatial distributions of silicon atoms, measured by secondary-ion mass spectroscopy. It is shown that the standard deviation σ of the δ-layer profile can be reduced from 3.4 to 2.5 nm by the proper selection of growth conditions. Measurements of the magnetic-field dependences of the Hall effect and conductivity show that such a decrease in σ allowed an increase in the mobility of the two-dimensional electron gas in heterostructures by 4000 cm^2/(V s) at 77 K and 600 cm^2/(V s) at 300 K. The mobility calculation taking into account filling of the first two size-quantization subbands shows that an increase in the mobility is well explained by a reduction in the Coulomb scattering at ionized donors due to an increase in the effective thickness of the spacer layer with decreasing σ of the δ-layer profile.
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41

Mamatrishat, M., M. Kouda, T. Kawanago, K. Kakushima, P. Ahmet, K. Tsutsui, Y. Kataoka, et al. "The effect of remote Coulomb scattering on electron mobility in La2O3gate stacked MOSFETs." Semiconductor Science and Technology 27, no. 4 (March 14, 2012): 045014. http://dx.doi.org/10.1088/0268-1242/27/4/045014.

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42

Esseni, D., and A. Abramo. "Modeling of electron mobility degradation by remote coulomb scattering in ultrathin oxide MOSFETs." IEEE Transactions on Electron Devices 50, no. 7 (July 2003): 1665–74. http://dx.doi.org/10.1109/ted.2003.814973.

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43

Arokianathan, C. R., J. H. Davies, and A. Asenov. "Ab-initio Coulomb Scattering in Atomistic Device Simulation." VLSI Design 8, no. 1-4 (January 1, 1998): 331–35. http://dx.doi.org/10.1155/1998/76027.

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As devices shrink to dimensions below 0.1 μm, it becomes essential to treat impurities and carriers as individual charges. We describe some approaches to ionised impurity scattering where the potential of the impurities is included directly in the dynamics of a Monto Carlo type simulation rather than as a scattering rate. The divergence in the Coulomb potential creates difficulties for mesh-based solutions of Poisson's equation, which we have compared with more accurate Ewald summation. However, we find that the mesh does not introduce significant errors, and reproduces well the expected mobility as a function of doping. Highly accurate integration of the equation of motion is needed for free carriers, and the initial distribution is problematic. In contrast, a simple treatment of phonon scattering by Brownian dynamics is more tolerant of errors because it tends to restore the system to equilibrium.
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44

Ohata, Akiko, Romain Ritzenthaler, Olivier Faynot, and Sorin Cristoloveanu. "Special size effects in advanced single-gate and multiple-gate SOI transistors." Journal of Telecommunications and Information Technology, no. 2 (June 25, 2023): 14–24. http://dx.doi.org/10.26636/jtit.2007.2.804.

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State-of-the-art SOI transistors require a very small body. This paper examines the effects of body thinning and thin-gate oxide in SOI MOSFETs on their electrical characteristics. In particular, the influence of film thickness on the interface coupling and carrier mobility is discussed. Due to coupling, the separation between the front and back channels is difficult in ultra-thin SOI MOSFETs. The implementation of the front-gate split C-V method and its limitations for determining the front- and back-channel mobility are described. The mobility in the front channel is smaller than that in the back channel due to additional Coulomb scattering. We also discuss the 3D coupling effects that occur in FinFETs with triple-gate and omega-gate configurations. In low-doped or tall fins the corner effect is suppressed. Narrow devices are virtually immune to substrate effects due to a strong lateral coupling between the two lateral sides of the gate. Short-channel effects are drastically reduced when the lateral coupling screens the drain influence.
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45

Zhou, Heng, Yuanjie Lv, Mingyan Wang, Peng Cui, and Zhaojun Lin. "Study of electrical transport properties of GaN-based side-gate heterostructure transistors." Applied Physics Letters 121, no. 21 (November 21, 2022): 212107. http://dx.doi.org/10.1063/5.0124626.

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In this study, GaN-based side-gate heterostructure transistors (SGHTs) with two electrical operating modes were fabricated. In the first operating mode, the SGHT was utilized as a common-source voltage amplifier with low power consumption and a broad input signal range. Analysis of the main scattering mechanisms affecting the electrical transport of two-dimensional electron gas (2DEG) in the channel revealed that polar optical phonon scattering and polarization Coulomb field (PCF) scattering play dominant roles under different side-gate voltages. In addition, channel current modulation of 2DEG electron mobility is primarily attributed to PCF scattering. Due to PCF scattering, the channel width also modulates the threshold voltage in this mode of operation. Moreover, in the second operating mode, the SGHT functioned as a traditional GaN high electron mobility transistor, allowing for electrically modulated threshold voltage and transconductance.
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46

Cretu, Bogdan, Abderrahim Tahiat, Anabela Veloso, and Eddy Simoen. "(Invited) In-Depth DC and Low Frequency Noise Characterization of Nanosheet FETs at Room and Cryogenic Temperatures." ECS Transactions 111, no. 1 (May 19, 2023): 197–208. http://dx.doi.org/10.1149/11101.0197ecst.

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In this work, an in-depth static and low frequency noise characterization of nanosheet FETs, consisting of two vertically stacked silicon channels per device, is performed. A comparison of the performances from n- versus p-channel FETs operated at 300 K and 78 K, in terms of static and low frequency noise parameters variability, is also discussed. The main electrical parameters are estimated from the I-V characteristics using access resistance robust methodologies. An additional criterion demonstrating that the extracted parameters are not influenced by the second mobility attenuation factor is proposed. The low frequency noise studies prove that the dominant flicker noise mechanism is linked to correlated carrier number and mobility fluctuations, with additional access resistances noise contribution in very strong inversion. The importance of the considered total flicker noise model on the estimation of the Coulomb scattering coefficient is highlighted.
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47

Rozen, John, Xing Guang Zhu, Ayayi Claude Ahyi, John R. Williams, and Leonard C. Feldman. "The Limits of Post Oxidation Annealing in NO." Materials Science Forum 645-648 (April 2010): 693–96. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.693.

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We report on the benefits and the shortcomings of the NO annealing process following observations made on capacitors and transistors with various nitrogen densities at the SiO2/SiC interface. While NO annealing leads to a progressively lower interface state density and higher inversion mobility, consistent with Coulomb-limited transport, MOSFET properties are still limited by the relatively poor interface quality. Moreover, NO induces a large amount of hole traps in the oxide. We establish that these properties are not related to the oxidation rate and we discuss them in terms of the nitrogen content.
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48

Bonnefoy, Baptiste. "À l’origine des milices de couleur : mobilité sociale et ségrégation dans les villes de l’empire espagnol." Genèses 123, no. 2 (May 12, 2021): 90–114. http://dx.doi.org/10.3917/gen.123.0090.

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49

Mamatrishat, Mamat, Miyuki Kouda, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, and Hiroshi Iwai. "Analysis of Remote Coulomb Scattering Limited Mobility in MOSFET with CeO2/La2O3 Gate Stacks." ECS Transactions 25, no. 7 (December 17, 2019): 253–57. http://dx.doi.org/10.1149/1.3203963.

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50

Chen, William P. N., Pin Su, and K. Goto. "Impact of Process-Induced Strain on Coulomb Scattering Mobility in Short-Channel n-MOSFETs." IEEE Electron Device Letters 29, no. 7 (July 2008): 768–70. http://dx.doi.org/10.1109/led.2008.2000909.

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