Relevant bibliographies by topics / Couloir de mobilité

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Couloir de mobilité'

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Published: 25 May 2024

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Journal articles on the topic "Couloir de mobilité"

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Bovey, Laurent. "De la classe spéciale à la classe régulière." Revue suisse de pédagogie spécialisée 14, no. 01 (March 7, 2024): 13–19. http://dx.doi.org/10.57161/r2024-01-03.

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Depuis une vingtaine d’années en Suisse, le « taux de séparation scolaire », c’est-à-dire le nombre d’élèves scolarisés en classe spéciale ou en établissement de pédagogie spécialisée, ne cesse de diminuer. Une partie des classes spéciales ont fermé et les élèves ont été réintégrés en classe régulière. Une autre partie de ces classes ont été transformées en dispositifs plus flexibles favorisant une plus grande mobilité des élèves. Deux recherches menées auprès d’élèves bénéficiant de mesures de pédagogie spécialisée dans le canton de Vaud montrent qu’une partie de ces élèves restent dans les faits séparés à l’intérieur des classes régulières, au fond de la classe, dans le couloir, dans un local de dégagement ou accompagnés une grande partie du temps par des enseignants et enseignantes spécialisées ou des assistants et assistantes à l’intégration. En outre, les élèves (ré)intégrés sont soumis à de nombreuses attentes comportementales et sont évalués en permanence, ce qui les pousse à mettre en place des stratégies complexes pour s’adapter aux exigences de la classe régulière.
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Nagy, Raluca. "Tourisme et migration dans le Maramureş." Ethnologies 31, no. 1 (November 9, 2009): 111–26. http://dx.doi.org/10.7202/038502ar.

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Dans cet article nous entreprenons de souligner la liaison entre deux formes de mobilité, tourisme rural et migration de travail, à travers quelques points d’articulation. Dans le cas du Maramureş, une région du nord de la Roumanie, on se trouve devant deux types de « couloirs de mobilité », vers et à partir de la région. Ces couloirs se superposent au niveau des pratiques autant qu’au niveau des réseaux et des ressources. Les cinq points plus concrets qu’on va aborder ici sont la circulation de l’argent, le rôle des médiateurs culturels des migrants, la question du confort et la façon d’investir dans les maisons, la problématique de la latinité et finalement l’angle terminologique, notamment le continuum tourisme — migration.
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Potbhare, Siddharth, Gary Pennington, Neil Goldsman, Aivars J. Lelis, Daniel B. Habersat, F. Barry McLean, and J. M. McGarrity. "Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation." Materials Science Forum 527-529 (October 2006): 1321–24. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1321.

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A physics based device simulator for detailed numerical analysis of 4H-SiC MOSFETs with an advanced mobility model that accounts for the effects of bulk and surface phonons, surface roughness and Coulomb scattering by occupied interface traps and fixed oxide charges, has been developed. A first principles quasi-2D Coulomb scattering mobility model specifically for SiC MOSFETs has been formulated. Using this, we have been able to extract the interface trap density of states profile for 4H-SiC MOSFETs and have shown that at room temperature, Coulomb scattering controls the total mobility close to the interface. High temperature, low field simulations and experiments show that the current increases with increase in temperature. The effect of Coulomb scattering decreases with increase in temperature causing an increase in the total mobility near the interface at low gate voltages.
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Pérez-Tomás, Amador, Michael R. Jennings, Philip A. Mawby, James A. Covington, Phillippe Godignon, José Millan, and Narcis Mestres. "SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps." Materials Science Forum 556-557 (September 2007): 835–38. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.835.

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In prior work we have proposed a mobility model for describing the mobility degradation observed in SiC MOSFET devices, suitable for being implemented into a commercial simulator, including Coulomb scattering effects at interface traps. In this paper, the effect of temperature and doping on the channel mobility has been modelled. The computation results suggest that the Coulomb scattering at charged interface traps is the dominant degradation mechanism. Simulations also show that a temperature increase implies an improvement in field-effect mobility since the inversion channel concentration increases and the trapped charge is reduced due to bandgap narrowing. In contrast, increasing the substrate impurity concentration further degrades the fieldeffect mobility since the inversion charge concentration decreases for a given gate bias. We have good agreement between the computational results and experimental mobility measurements.
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Ji, Qizheng, Jun Liu, Ming Yang, Xiaofeng Hu, Guangfu Wang, Menglin Qiu, and Shanghe Liu. "Influence of Proton Irradiation Energy on Gate–Channel Low-Field Electron Mobility in AlGaN/GaN HEMTs." Electronics 12, no. 6 (March 20, 2023): 1473. http://dx.doi.org/10.3390/electronics12061473.

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AlGaN/GaN high-electron-mobility transistors (HEMTs) with two different gate–drain distances (30 μm and 10 μm) were exposed to 1 MeV, 0.6 MeV, and 0.4 MeV protons at a fluence of 2.16 × 1012 cm−2. The gate–channel electron density and low-field mobility were obtained by measuring the capacitance–voltage characteristics and current–voltage characteristics. After proton irradiation, the gate–channel low-field electron mobility of the AlGaN/GaN HEMT with a 30 μm gate–drain distance increases and that with a 10 μm gate–drain distance decreases. It is studied and found that the mobility behavior is related to the polarization Coulomb field scattering, and the proton irradiation influences the intensity of the polarization Coulomb field scattering by changing the polarization/strain distribution in the barrier layer. The different gate–drain distances correspond to different variation trends of scattering intensity. The effect of 1 MeV protons on the barrier layer is smaller compared with 0.6 MeV and 0.4 MeV protons, so the mobility variation is smaller.
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Pérez-Tomás, Amador, Miquel Vellvehi, Narcis Mestres, José Millan, P. Vennegues, and J. Stoemenos. "Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFETs Measured in Strong Inversion." Materials Science Forum 527-529 (October 2006): 1059–62. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1059.

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A high field-effect mobility peak (50 cm2/Vs) has been extracted in (0001) Si face 4HSiC MOSFETs with oxidized Ta2Si (O-Ta2Si) high-k dielectric (k~20) as gate insulator, with their gates in the strong inversion regime. The interface state density (Dit) has not been particularly reduced in O-Ta2Si capacitors. This anomalous mobility enhancement is explained in terms of Coulomb scattering reduction and quantified using a physical model based on the Lombardi mobility model. The anomalous mobility increase is closely related to the leakage current, and also to the gate breakdown mechanism. We propose a model for which the observed interfacial SiO2 tunnel current combined with Poole-Frenkel mechanisms at the O-Ta2Si gate generates a sufficiently low abrupt transition in gate breakdown to obtain an effective passivation of the interface traps. Under these conditions, the increase of free carriers in the inversion layer induced by the gate leakage diminishes the effect of the interface trap Coulomb scattering.
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Chen, W. P. N., Pin Su, and K. I. Goto. "Investigation of Coulomb Mobility in Nanoscale Strained PMOSFETs." IEEE Transactions on Nanotechnology 7, no. 5 (September 2008): 538–43. http://dx.doi.org/10.1109/tnano.2008.2004771.

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Driussi, Francesco, and David Esseni. "Simulation Study of Coulomb Mobility in Strained Silicon." IEEE Transactions on Electron Devices 56, no. 9 (September 2009): 2052–59. http://dx.doi.org/10.1109/ted.2009.2026394.

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Walczak, Jakub, and Bogdan Majkusiak. "Scattering mechanisms in MOS/SOI devices with ultrathin semiconductor layers." Journal of Telecommunications and Information Technology, no. 1 (March 30, 2004): 39–49. http://dx.doi.org/10.26636/jtit.2004.1.230.

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Main scattering mechanisms affecting electron transport in MOS/SOI devices are considered within the quantum-mechanical approach. Electron mobility components (i.e., phonon, Coulomb and interface roughness limited mobilities) are calculated for ultrathin symmetrical DG SOI transistor, employing the relaxation time approximation, and the effective electron mobility is obtained showing possible mobility increase relative to the conventional MOSFET in the range of the active semiconductor layer thickness of about 3 nm.
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Ihlenborg, Marvin, Ann-Kathrin Schuster, Jürgen Grotemeyer, and Frank Gunzer. "Measuring the effects of Coulomb repulsion via signal decay in an atmospheric pressure laser ionization ion mobility spectrometer." European Journal of Mass Spectrometry 24, no. 4 (March 2, 2018): 330–36. http://dx.doi.org/10.1177/1469066718761585.

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Using lasers in ion mobility spectrometry offers a lot of advantages compared to standard ionization sources. Especially, the ion yield can be drastically increased. It can, however, reach levels where the Coulomb repulsion leads to unwanted side effects. Here, we investigate how the Coulomb repulsion can be detected apart from the typical signal broadening by measuring effects created already in the reaction region and comparing them with corresponding finite element method simulations.
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Dissertations / Theses on the topic "Couloir de mobilité"

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Cortina, Mélanie. "Fostering synergy between public transportation and autonomous mobility on demand : the prospects of regulation." Electronic Thesis or Diss., Vaulx-en-Velin, École nationale des travaux publics de l’État, 2023. http://www.theses.fr/2023ENTP0010.

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Grâce à son aptitude à répondre à une demande asymétrique de manière efficace et son coût d'exploitation réduit, la mobilité autonome à la demande (MAD) pourrait permettre de diminuer l'empreinte carbone du système de transport urbain tout en maintenant sa performance. Mais pour éviter l'augmentation du nombre de kilomètres parcourus, la MAD doit fonctionner en synergie avec les transports en commun (TC), plus efficaces pour dégager des économies d'échelle. Or la coopération entre MAD privée et TC n'est pas garantie comme en témoigne l'exemple des Uber. Cette thèse cherche donc à explorer la question suivante : comment réguler de manière optimale la MAD pour favoriser sa coopération avec les TC? La problématique est étudiée dans deux cas d'études distincts, un couloir de mobilité et une aire métropolitaine. Avec une approche en optimisation, nous étudions la désagrégation de la MAD en plusieurs flottes opérant sur des zones de couverture bien distinctes dans le cas du couloir, et explorons différents schémas de tarification dans le cas de l'agglomération. Sur chacun des cas, le travail répond à trois objectifs. Premièrement, il s'agit de rendre compte des bénéfices de la complétion des TC par la MAD en termes d'efficacité du système (temps de parcours, coût de trajet, individuels et cumulés), d'indicateurs environnementaux (part de la mobilité collective dans les déplacements, émissions carbone), et d'équité. Deuxièmement, nous cherchons à mettre en évidence les modalités de coopération et compétition entre MAD et TC et de décrire les motifs de mobilité correspondant. Enfin, il s'agit de proposer des politiques de régulation optimales, capables d'exploiter le plein potentiel de la MAD intermodale
With its ability to overcome common limitations of shared mobility, such as supply-demand imbalances, stochasticity in supply, and unaffordable rides, Autonomous Mobility on Demand (AMoD) could help face today's environmental challenges. But to prevent a too-high induced demand and increase the vehicle kilometers traveled, integrating AMoD and Public Transportation (PT) is required. However, the cooperation of AMoD and PT is not ensured, as shown by Uber's example. The main issue addressed in this thesis is how to regulate AMoD to foster cooperation with PT and achieve the benefits of intermodal AMoD. This question is tackled in two study cases: a transportation corridor and a large urban area. The work has three main objectives. First, it accounts for the benefits of a multimodal system based on the cooperation between PT and AMoD regarding efficiency, sustainability, and equity. Second, it aims at understanding the circumstances of cooperation/competition between PT and AMoD. The idea is to identify under which conditions AMoD cooperates or competes with PT and describe the associated mobility patterns. Third, we propose optimized means to realize the benefits of intermodal AMoD. It consists in optimizing the regulation strategies chosen for both case studies. In the corridor, we optimize the joint PT design and AMoD service disaggregation into fleets operating on geofenced coverage zones for the corridor. In the large city, we explore several pricing schemes affecting both travelers and autonomous vehicles
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Potbhare, Siddharth. "Characterization of 4H-SiC MOSFETs using first principles coulomb scattering mobility modeling and device simulation." College Park, Md. : University of Maryland, 2005. http://hdl.handle.net/1903/3347.

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Thesis (M.S.) -- University of Maryland, College Park, 2005.
Thesis research directed by: Dept. of Electrical and Computer Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
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Devogelaere, Jonathan. "Les couleurs du mobilier d'apparat en bronze dans le monde gréco-romain, du IIe siècle avant notre ère au IIe siècle de notre ère : de la caractérisation technique aux valeurs symboliques." Thesis, Aix-Marseille, 2018. http://www.theses.fr/2018AIXM0602.

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Ma thèse a pour objet l’étude des couleurs du mobilier d’apparat en bronze dans le monde gréco-romain, produit entre le IIe s. av. n. è. et le IIe s. de n. è. en Méditerranée. Elle place au cœur de sa démarche historique la caractérisation des couleurs, leur analyse technique et l’étude de leurs valeurs symboliques, associées à des contextes de production et de réception précis. Redonner en effet aux couleurs toute leur place dans l’ameublement de luxe en bronze, en conduire l’étude typologique, iconographique et technique, les replacer dans leur contexte de réception permet de comprendre non seulement l’impact visuel recherché par le maître de maison, mais aussi et surtout leurs valeurs spécifiques dans l’élaboration du discours des élites à destination de leurs semblables et des autres classes de la société. Pour identifier et comprendre cette polychromie, une démarche interdisciplinaire combinant des méthodologies archéologiques, archéométriques et sociologiques a été appliquée. 538 pièces de mobilier en bronze à décors polychromes sont ainsi recensées et réparties dans diverses catégories. Ces multiples données sont réunies et mises en relation grâce à la création et l’utilisation d’une base de données relationnelle nommée « Iris ». La convergence de ces méthodes et de ces angles d’attaque du matériel étudié vise à un seul but : apprécier la valeur des couleurs et des autres traitements de surface de ces objets de luxe d’inspiration grecque dans le processus général d’acculturation des populations et provinces romaines au modèle gréco-romain, un modèle défini par Paul Veyne comme propre à un Empire où « la culture y était hellénique et le pouvoir était romain »
My thesis aims to study the colours of bronze ceremonial furniture produced by the Greco-Roman world between the 2nd century BCE and the 2nd century CE in the Mediterranean. The main objective is to characterize of colours, their technical properties, and symbolic values associated with specific production and reception contexts.Consequently, by using archaeological contexts, techno-typological and iconographic studies, the objective of this research is to characterize the specificity and originality of the use and visual impact of bronze in the elaboration of the discourse of the Greco-Roman elite, owner of this ostentatious furniture; this discourse is also aimed at this elite as other classes of Roman society.My thesis explores as much the history of techniques as that of arts and mentalities. It combines archaeological, archaeometric, and sociological methodologies for an interdisciplinary approach. 538 pieces of bronze furniture with polychrome decorations are identified and divided into different categories. Furthermore, these multiple data are also collected and linked through the creation and use of a relational database named “Iris”.The convergence of these methods has a single purpose: to appreciate the significance of colours and to investigate other surface treatments on Greek inspired luxury furnishings. The gradual acculturation of “the Greek world” as a result of Roman expansion is evident in a study of this furniture, its colours, and other treatments using the same historical perspective as defined by Paul Veyne as: an Empire where “la culture y était hellénique et le pouvoir était romain”
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Liu, Liu. "Corridors urbains et Transit Oriented Development : Enseignements d’une modélisation intégrée des transports et de l’usage du sol appliquée à la métropole lilloise." Thesis, Lille 1, 2016. http://www.theses.fr/2016LIL10117/document.

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La mobilité des personnes dépend à la fois de l’offre de service de transports, et de l’organisation de notre espace de vie. Nos choix de localisation de résidence, de travail, ainsi que nos choix de déplacement et d’itinéraire dépendent de nos budgets monétaires, temporels et de nos préférences. L’organisation de notre espace de vie a donc de fortes répercussions sur les consommations d’espace et d’énergie. Peut-on concevoir notre espace de vie en 2040 sous une forme plus sobre ? Pour parvenir à un nouvel équilibre, nous proposons, sur le terrain de l’agglomération lilloise, d’appliquer le concept urbanistique théorique du Transit-Oriented-Development et son modèle du Corridor Urbain. Nos objectifs consistent à concentrer les activités de tous types le long des axes de Transports Collectifs lourds existants, ainsi, à redévelopper la métropole dans ses corridors afin de promouvoir une vie de proximité. En limitant l’urbanisation en dehors des espaces de corridors, nous maîtrisons l’étalement urbain et facilitons une mobilité durable. Pour tester un tel scénario, un modèle de simulation intégrée est mis en place incluant à la fois l’usage des espaces et le réseau complet des transports. Trois visions de stratégie territoriale en matière de réaménagement sont testées afin de mesurer les conséquences à long terme sur la morphologie des espaces et sur les mobilités humaines pour des activités diverses, ainsi que les effets environnementaux liés à ces actions. En plus d’enrichir la compréhension du système complexe qu’est la ville, les résultats issus de cette étude prospective apportent des indications pour l’organisation spatiale et pour la conception de la mobilité
Human mobility depends not only on the supply of transport services, but more indirectly, on the organization of our living space. Our residential and working location, as well as our travelling mode and itinerary choices are based on our monetary and time budgets, besides, personal preferences. Therefore, the organization of our living space has wide implications on the space and energy consumption. Can we design this space in 2040 in a more sustainable way? To achieve a new balance, we propose to apply the theoretical urban concept of Transit-Oriented-Development and the model of Urban Corridor to Lille metropolitan area. We aim at concentrating activities of all kinds along the existing mass transit axis, thus, revitalizing the city within its public transport (PT) corridors so as to promote dense, diverse and designed neighborhoods. By limiting constructions outside PT corridor, we control urban sprawl and encourage short-distanced and less time-consuming travelling patterns. To test this scenario, we set up a land use and transport integrated model including main economic activities, real estate market in addition to the complete transport network. Three visions of redevelopment strategy are tested in order to measure their long-term consequences related to different actions, such as the territorial morphology, the location choices of household and firms, the travel behavior for various activities and associated environmental impacts. By providing a reference for the spatial organization and for the transport services planning, the results stemming from this prospective analysis may also enhance our global understanding of the city - how this complex system works
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Cassilde, Stéphanie. "Choix rationnel, langage et représentations des inégalités et des discriminations. Une étude des déclarations de couleurs de peau dans le Brésil contemporain." Phd thesis, Université d'Auvergne - Clermont-Ferrand I, 2012. http://tel.archives-ouvertes.fr/tel-00713948.

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Au Brésil les déclarations de couleurs de peau sont influencées par les caractéristiques socioéconomiques des personnes. Pour appréhender ce phénomène, nous avons réalisé une enquête de terrain de neuf mois (2006-2007) dans deux entreprises de la ville de São Paulo. En liant économie et sociologie, nous identifions les motivations et mécanismes à l'oeuvre lors d'une déclaration de couleur de peau, en appréhendant la mosaïque brésilienne des couleurs de peau dans sa globalité. Nous soulignons la fluidité de la définition des catégories et des processus de catégorisation. La cor [couleur] devient un concept en soi et nous décrivons une relation de dépendance chromatique. Nous explicitons des éléments entourant les déclarations et relevant de l'implicite, puis nous modélisons la construction de ces déclarations en termes de mobilité chromatique. Nous soulignons que la stabilité des déclarations selon différentes classifications masque une modification de la définition des catégories de couleurs de peau à travers un changement dans la distribution effective des variables socio-économiques au niveau individuel. Puis nous examinons la possibilité de disposer d'une équation de calcul racial afin d'instrumenter la variable " couleur de peau " dans les applications économétriques pour lesquelles un problème d'endogénéité se pose. Enfin nous questionnons l'objet appréhendé à travers les mesures d'inégalités et de discriminations car l'interaction entre les choix rationnels (les déclarations) et le langage (support des déclarations) souligne leur dimension de représentations plutôt que d'une description basée sur la matérialité physique des individus.
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Wu, Chih-Jung, and 吳致融. "Investigation of Remote Coulomb Scattering Induced Mobility Degradation in Advanced VLSI Devices." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/46699028835799800777.

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碩士
國立交通大學
電子工程系所
95
Abstract. The remote Coulomb scattering (RCS) induced mobility degradation in advanced VLSI devices is investigated. Mobility degradation in HK dielectric MOSFETs is observed. By two-frequency charge pumping method, we show that the mobility degradation is caused from the HK bulk traps. An analytical equation for RCS mobility is calculated to simulate the RCS effect. By using SONOS FN programming, we confirm that the mobility will by reduced by RCS. Our result shows that mobility will be severely limited by RCS as interfacial oxide thickness (IOT) scaling. Try to know that how RCS effect affects random telegraph signal (RTS) noise, the RTS noise is characterized in SONOS flash memories. By controlling program window, the RTS noise at different program window is observed in SONOS flash memories. The amplitude of RTS at larger program window is smaller. The detailed model is still puzzling and needed more investigation.
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Book chapters on the topic "Couloir de mobilité"

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Potbhare, S., Gary Pennington, Neil Goldsman, Aivars J. Lelis, D. B. Habersat, F. Barry McLean, and J. M. McGarrity. "Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation." In Silicon Carbide and Related Materials 2005, 1321–24. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1321.

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Bonnefoy, Baptiste. "Chapitre IV. Les officiers de couleur : mobilité sociale, mobilité spatiale." In Au-delà de la couleur, 111–32. Presses universitaires de Rennes, 2022. http://dx.doi.org/10.4000/books.pur.164481.

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Bilbro, Jeffrey. "Fidelity." In Virtues of Renewal, 117–34. University Press of Kentucky, 2018. http://dx.doi.org/10.5810/kentucky/9780813176406.003.0007.

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Our economy rewards those who are rootless; the well-paid Creative Class that Richard Florida celebrates thrives on geographic hyper-mobility. Yet such mobility encourages us to invest not in communities, but in our own résumés and careers, and it becomes tempting to leave behind our mistakes and the places they’ve damaged. Berry’s practice of careful revision, particularly evident in his early novels Nathan Coulter and A Place on Earth, demonstrates a patient faithfulness to develop his imaginative vision. In the case of Nathan Coulter, this entails reimagining the death of Nathan’s grandfather and making Nathan himself a more faithful inheritor of this loss. In A Place on Earth, Berry’s revisions similarly focus the novel on questions of fidelity. In the first edition, his prose provided too much explication and context for readers, exempting them from the difficult ignorance his characters endure. These revised novels do not sugarcoat the difficult work of fidelity, but they portray how fidelity enables individuals and communities to receive redemption in the midst of loss.
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Singleton, John. "Inhomogeneous and hot carrier distributions in semiconductors." In Band Theory and Electronic Properties of Solids, 154–64. Oxford University PressOxford, 2001. http://dx.doi.org/10.1093/oso/9780198506454.003.0012.

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Abstract In a conventional metal such as Cu, an abnormal distribution of electronic charge will vanish very quickly indeed (in less than about 1 picosec). The reason for this rapid dispersion is of course the strong Coulomb forces between 158 electrons spaced by distances ˜ 0.3 nm and the electrons’ high mobility. However, in semiconductors, we have the possibility of the simultaneous existence of holes and electrons (see Section 9.3.1). If we inject an excess of minority carriers (say holes) into a semiconductor, then the majority carriers (say electrons) will move to the region containing the holes to ensure electrical neutrality. After this electrical neutrality is established, there is no longer a strong Coulomb force to disperse the holes, and so the excess of holes will merely diffuse out and/or drift under the action of an external field.
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Ghosh, Rahul, Tanmoy Majumder, Abhishek Bhattacharjee, and Rupanjal Debbarma. "FinFET Advancements and Challenges: A State-of-the-Art Review." In Nanoelectronics Devices: Design, Materials, and Applications (Part I), 208–36. BENTHAM SCIENCE PUBLISHERS, 2023. http://dx.doi.org/10.2174/9789815136623123010011.

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A review of the electrical and physical characteristics of FinFETs is presented here. This work focuses on the latest structures of FinFET according to its classifications and three-dimensional schematics. Through studying the output I-V characteristics, the transfer characteristics, and the subthreshold current in the FinFET channel, the electrical characteristics of FinFETs have been analyzed. Considerations were made of coulomb, phonon, and surface roughness scattering to examine effective charge carrier mobility in the FinFET channel. Lastly, in this chapter, the impact of the Fin layer shape on device performance is studied.
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Baker, Jack R., Jeffrey Bilbro, and Wendell Berry. "Introduction." In Wendell Berry and Higher Education. University Press of Kentucky, 2017. http://dx.doi.org/10.5810/kentucky/9780813169026.003.0001.

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An education for health begins by forming the imaginations and affections of students so that rather than desiring upward mobility, they can imagine healthy, placed lives. The introduction starts with a reading of Hannah Coulter, whose title character describes her fear that she has failed to tell the right stories to her children, thus inadvertently contributing to their desire for upward mobility at the cost of healthy communities. Because our affections have such far-reaching influence—shaping the questions we ask and the ways we arrange knowledge—Berry focuses on the conflicting internal desires termed “boomer” and “sticker” and how we should work to rightly order these desires. The contrast between boomers and stickers—the different desires they have, the different stories they tell, the different questions they ask, the different economies they participate in, and the contrasting models of the university they propose—elucidates the contrast between the educational system we have now and an education for health: the boomer wants to isolate knowledge from its origins in order to maximize its utility and profitability, whereas the sticker values a medieval, rooted kind of learning whose branches connect as much as possible. Thus, the way we organize and order knowledge stems from the kinds of questions we ask, which in turn arise from the orientation of our desires.
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7

Graf, William L. "Fluvial Sediment, Forms, and Processes." In Plutonium and the Rio Grande. Oxford University Press, 1995. http://dx.doi.org/10.1093/oso/9780195089332.003.0009.

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Abstract:
Although there are numerous aspects of sediment that might be considered in conjunction with questions related to plutonium transport and storage in rivers, particle size is the critical characteristic. Information on the size distribution of particles in sedimentary deposits connects plutonium, sediment, and river processes. An explanation of the geography of plutonium in the regional river system requires knowledge of particle sizes, the distribution of those particle sizes, and their potential mobility in the regional canyons, rivers, and reservoirs. Some general data concerning the size characteristics of fluvial sediment in the Rio Grande system are available from published sources for a few locations, particularly Los Alamos Canyon. Recent, previously unpublished field and laboratory investigations provide additional detailed information for the changing sedimentary environments associated with the river system. This chapter reviews the characteristics of river sediments in the Northern Rio Grande and presents a regional sediment budget from historical and geographical perspectives. Almost 200 sediment samples from deposits of various ages near the channels of the Rio Grande and tributaries demonstrate the variability of the sediment particle sizes. The analysis had three parts: sample collection, sieving, and electronic particle analysis. In the sample-collection phase, collection sites represented identifiable sedimentary units or channel deposits. Each collection site yielded three samples to indicate local variability. Penetration of the surfaces to depths of 5 to 90 cm with a standard cylindrical soil probe provided masses of about 120 g each for laboratory analysis. Investigators kept only the split of the sample that included those particles with diameters of less than 2 mm (that is, sand size or smaller). Laboratory procedures included sieving and electronic counting. Sieving divided each sample into masses consisting of those particles larger than 63 microns in diameter (the sand fraction) and those smaller than 63 microns (the silt and clay fraction). The weight of each fraction provided a standarized means of comparing the samples for this study and the results reported by other researchers. Analysis of the silt and clay fraction using a Coulter electronic particle analysis system permitted a detailed investigation of the frequency distribution of the particles in this restricted range.
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Conference papers on the topic "Couloir de mobilité"

1

Xu, Haoyu, Jing Zhang, Shuhua Wei, Xiaolei Wang, and Wenwu Wang. "Electron Mobility Degradation Due to Remote Coulomb Scattering in Ge MOSFET." In 2016 International Conference on Computer Science and Electronic Technology. Paris, France: Atlantis Press, 2016. http://dx.doi.org/10.2991/cset-16.2016.72.

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2

Driussi, Francesco, and David Esseni. "Revised analysis of Coulomb scattering limited mobility in biaxially strained silicon MOSFETs." In 2009 Proceedings of the European Solid State Device Research Conference (ESSDERC). IEEE, 2009. http://dx.doi.org/10.1109/essderc.2009.5331465.

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Weber, Olivier, and Shin-ichi Takagi. "New Findings on Coulomb Scattering Mobility in Strained-Si nFETs and its Physical Understanding." In 2007 IEEE Symposium on VLSI Technology. IEEE, 2007. http://dx.doi.org/10.1109/vlsit.2007.4339755.

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Zhao, Yi, Mitsuru Takenaka, and Shinichi Takagi. "Comprehensive understanding of surface roughness and Coulomb scattering mobility in biaxially-strained Si MOSFETs." In 2008 IEEE International Electron Devices Meeting (IEDM). IEEE, 2008. http://dx.doi.org/10.1109/iedm.2008.4796755.

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5

N. Chen, W. P., P. Su, and K. Goto. "A Comprehensive Study of Coulomb Scattering Mobility in Short-Channel Process-Induced Strain NMOSFETs." In 2008 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2008. http://dx.doi.org/10.7567/ssdm.2008.b-6-4.

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Yang, J., Z. Xia, G. Du, X. Liu, R. Han, and J. Kang. "Coulomb Scattering induced mobility degradation in Ultrathin-body SOI MOSFETs with high-k gate stack." In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306146.

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Takahashi, N., A. Aki, T. Ukai, Y. Nakajima, T. Maekawa, and T. Hanajiri. "Electrophoretic mobility and resultant zeta potential of an individual cell analyzed by electrophoretic coulter method." In 2009 International Semiconductor Device Research Symposium (ISDRS 2009). IEEE, 2009. http://dx.doi.org/10.1109/isdrs.2009.5378234.

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8

Oka, Hiroshi, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, and Takahiro Mori. "Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation." In 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). IEEE, 2022. http://dx.doi.org/10.1109/vlsitechnologyandcir46769.2022.9830505.

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9

Zhang, Xianle, Pengying Chang, Gang Du, and Xiaoyan Liu. "Impacts of Remote Coulomb Scattering on Hole Mobility in Si p-MOSFFETs at Cryogenic Temperatures." In 2019 Silicon Nanoelectronics Workshop (SNW). IEEE, 2019. http://dx.doi.org/10.23919/snw.2019.8782899.

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Mizubayashi, W., N. Yasuda, H. Hisamatsu, H. Ota, K. Tominaga, K. Iwamoto, K. Yamamoto, T. Horikawa, T. Nabatame, and A. Toriumi. "Effect of Coulomb Scattering on Stress-Induced Mobility Degradation in nMOSFETs with HfAlOX/SiO2 Dielectrics." In 2003 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2003. http://dx.doi.org/10.7567/ssdm.2003.a-7-2.

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