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Relevant bibliographies by topics / Copper vapour

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Academic literature on the topic 'Copper vapour'

Author: Grafiati

Published: 4 June 2021

Last updated: 5 February 2022

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Journal articles on the topic "Copper vapour"

1

Evtushenko, Gennadii S., I. D. Kostyrya, V. B. Sukhanov, Viktor F. Tarasenko, and D. V. Shiyanov. "Peculiarities of pumping of copper vapour and copper bromide vapour lasers." Quantum Electronics 31, no. 8 (August 31, 2001): 704–8. http://dx.doi.org/10.1070/qe2001v031n08abeh002030.

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Lyabin, Nikolai A., and M. A. Kazaryan. "Copper and gold vapour lasers." Quantum Electronics 31, no. 6 (June 30, 2001): 564. http://dx.doi.org/10.1070/qe2001v031n06abeh013096.

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Becker, R., J. Weiß, A. Devi, and R. A. Fischer. "Chemical vapour deposition of copper using copper(II) alkoxides." Le Journal de Physique IV 11, PR3 (August 2001): Pr3–569—Pr3–575. http://dx.doi.org/10.1051/jp4:2001372.

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Riyves, R. B., V. A. Kelman, Y. V. Zhmenyak, Y. O. Shpenik, and S. P. Ulusova. "Copper-vapour laser with silver additive." Applied Physics B 80, no. 7 (May 3, 2005): 865–69. http://dx.doi.org/10.1007/s00340-005-1806-5.

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Nasibov, A. S., N. N. Mel'nik, I. V. Ponomarev, S. V. Romanko, S. B. Topchii, A. N. Obraztsov, M. Yu Bashtanov, and A. A. Krasnovskii. "Copper and gold vapour lasers for spectroscopy." Quantum Electronics 28, no. 5 (May 31, 1998): 403–5. http://dx.doi.org/10.1070/qe1998v028n05abeh001236.

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Sukhanov, V. B., V. F. Fedorov, F. A. Gubarev, V. O. Troitskii, and Gennadii S. Evtushenko. "Capacitive-discharge-pumped copper bromide vapour laser." Quantum Electronics 37, no. 7 (July 31, 2007): 603–4. http://dx.doi.org/10.1070/qe2007v037n07abeh013605.

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Zoolfakar, Ahmad Sabirin, Muhammad Zamharir Ahmad, Rozina Abdul Rani, Jian Zhen Ou, Sivacarendran Balendhran, Serge Zhuiykov, Kay Latham, Wojtek Wlodarski, and Kourosh Kalantar-zadeh. "Nanostructured copper oxides as ethanol vapour sensors." Sensors and Actuators B: Chemical 185 (August 2013): 620–27. http://dx.doi.org/10.1016/j.snb.2013.05.042.

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Mane, Anil U., and S. A. Shivashankar. "Atomic layer chemical vapour deposition of copper." Materials Science in Semiconductor Processing 7, no. 4-6 (January 2004): 343–47. http://dx.doi.org/10.1016/j.mssp.2004.09.094.

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Gabay, S., P. Blau, M. Lando, I. Druckman, Z. Horvitz, Y. Yfrah, I. Hen, E. Miron, and I. Smilanski. "Stabilization of high-power copper vapour laser." Optical and Quantum Electronics 23, no. 4 (1991): S485—S492. http://dx.doi.org/10.1007/bf00619644.

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Sinha, S., K. Dasgupta, K. G. Manohar, S. Kundu, and L. G. Nair. "Self-defocusing of light in copper vapour." Applied Physics B: Lasers and Optics 64, no. 6 (June 1, 1997): 667–70. http://dx.doi.org/10.1007/s003400050231.

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Dissertations / Theses on the topic "Copper vapour"

1

Lewis, R. R. "Mechanisms of copper vapour lasers." Thesis, University of Oxford, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233563.

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Marshall, Graham David. "Kinetically enhanced copper vapour lasers." Thesis, University of Oxford, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.270222.

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Wadsworth, W. J. "Copper vapour laser pumped TI:sapphire lasers." Thesis, University of Oxford, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.389029.

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Kapitan, Daniel. "Laser ablation with copper vapour lasers." Thesis, University of Oxford, 1999. https://ora.ox.ac.uk/objects/uuid:a1dc1a3b-602a-4ebb-abe2-734e8e11f15a.

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The use of copper vapour lasers for laser ablation in laser materials processing applications is studied. To this purpose, the generation of near diffraction-limited beam quality output from a single medium-scale oscillator is demonstrated via matching the total buffer gas pressure to the specific electrical input power loading and the degree of insulation of the plasma tube. The design and characterisation of a Master-Oscillator Power-Amplifier system based on a smallbore oscillator is also described, focusing on pulse stretching techniques to provide efficient seeding required for producing 20-50 W high beam-quality output for laser materials processing purposes. Various experimental studies on the fundamental processes of laser ablation of metals are presented. The effect of the background gas properties on shock-wave formation in laser generated plasmas is studied using a ballistic pendulum. The experimental findings are found to be accurately described by a modified Sedov-Taylor-Von Neumann theory which accounts for the effect of the piston-mass. The theory is applied to characterise the fluorination process in the shock-wave, in view of oxygen isotope analysis in geochemistry. Atomic emission spectroscopy is shown to provide some measure of the electron temperature and electron density at the plasma core. The experimental results are discussed in view of existing models to describe the extreme Stark-broadening and self-absorption in dense, cool plasmas. A comparative study of the use of femtosecond and nanosecond pulsed lasers for laser ablation of metals is presented to assess the relative importance of thermal diffusion. Measurement of the recoil momentum due to ejection of molten particulates during ablation in vacuum provides insight into the effect of material properties. Diffusion-limited surface texturing of metals via direct transfer of an optical interference patterns is demonstrated.

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Clark, Graeme Lawrence. "Studies of copper and gold vapour lasers." Thesis, University of St Andrews, 1988. http://hdl.handle.net/10023/13803.

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The work described in this thesis covers various aspects of pulsed copper and gold vapour lasers. The work is divided into four main parts : a computer model of the kinetics of the copper vapour laser discharge; construction and characterization of a copper vapour laser and a gold vapour laser system (to be used for photodynamic cancer treatment); analysis of the thermal processes occurring in the various forms of thermal insulation used in these lasers; and studies of the use of metal walls to confine a discharge plasma. The results of this work were combined in the design of the first copper vapour laser to use metal rather than an electrically insulating ceramic material for confinement of the discharge plasma. Laser action in copper vapour has been achieved in a number of metal-walled designs, with continuous lengths of metal ranging from 30 mm, in a segmented design, to 400 mm, where the discharge plasma was confined by two molybdenum tubes of this length. A theoretical explanation of the behaviour of plasmas in metal-walled discharge vessels is described.

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Hogan, Geoff P. "A study of the kinetics of copper vapour lasers." Thesis, University of Oxford, 1993. https://ora.ox.ac.uk/objects/uuid:174eb6ce-3576-49c1-add4-5e1b0d2e1571.

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A 42 mm bore, 40 W copper vapour laser (CVL) has been set up in a test rig in order to measure the values of many of the parameters of the laser as a function of time in the laser pulse-delay cycle, and of radial position in the plasma tube, while at all times running under standard operating conditions. In this way it has been possible to obtain the world's first truly comprehensive parameter map of the CVL in which all of the measurements have been performed upon the same device, operating under identical conditions and with all times accurately referenced to a datum. It is intended that this set of data is primarily for the benefit of those involved in the computer modelling of the CVL plasma, however initial analysis of the results obtained has been undertaken. All diagnostic techniques have been carefully selected as offering the highest possible level of accuracy and freedom from assumptions, and each one employed has been described in detail in terms of both theory and practical application. The hook method has been used for the measurement of the population density in the copper ground state, the upper and lower laser levels, one of the copper quartet levels, and one of the neon metastable levels, each with a time resolution of 5 ns, and a radial resolution of 2 mm. The electron density has been measured, also with a radial resolution of 2 mm and with nanosecond time resolution using a two colour interferometric technique employing the measurement of the refractive index of the plasma at 10.6 Î¼m and 670 nm. Measurement has been made of the voltage on the laser electrodes and the current flowing in the laser during the discharge. Ancillary experiments have been performed to study the CVL discharge which have yielded some unexpected results, and measurements have been performed on a 60 mm bore CVL to determine fully the mechanism of the time delay between the onset of lasing at the plasma tube wall and on axis, and novel observations have been made.

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Fallberg, Anna. "Chemical Vapour Deposition of Undoped and Oxygen Doped Copper (I) Nitride." Doctoral thesis, Uppsala universitet, Institutionen för materialkemi, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-110533.

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In science and technology there is a steadily increased demand of new materials and new materials production processes since they create new application areas as well as improved production technology and economy. This thesis includes development and studies of a chemical vapour deposition (CVD) process for growth of thin films of the metastable material copper nitride, Cu3N, which is a semiconductor and decomposes at around 300 oC. The combination of these properties opens for a variety of applications ranging from solar cells to sensor and information technology. The CVD process developed is based on a metal-organic compound copper hexafluoroacetylacetonate, Cu(hfac)2 , ammonia and water and was working at about 300 oC and 5 Torr. It was found that a small amount of water in the vapour increased the growth rate considerably and that the phase content, film texture, chemical composition and morphology were strongly dependent on the deposition conditions. In-situ oxygen doping during the CVD of Cu3N to an amount of 9 atomic % could also be accomplished by increasing the water concentration in the vapour. Oxygen doping increases the band gap of the material as well as the electrical resistivity and changes the stability. The crystal structure of Cu3N is very open and contains several sites which can be used for doping. Different spectroscopic techniques like X-ray photoelectron spectroscopy, Raman spectroscopy and near edge X-ray absorption fine structure spectroscopy were used to identify the oxygen doping site(s) in Cu3N. Besides the properties, the oxygen doping also affected the morphology and texture of the films. By combining thin layers of different materials several properties can be optimized at the same time. It has been demonstrated in this thesis that multilayers, composed of alternating Cu3N and Cu2O layers, i.e. a metastable and a stable material, could be grown by CVD technique. However, the stacking sequence affected the texture, morphology and chemical composition. The interfaces between the different layers were sharp and no signs of decomposition of the initially deposited metastable Cu3N layer could be detected.

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Lewis, Amanda. "Fundamental studies of the chemical vapour deposition of graphene on copper." Thesis, University of Manchester, 2014. https://www.research.manchester.ac.uk/portal/en/theses/fundamental-studies-of-the-chemical-vapour-deposition-of-graphene-on-copper(f85feb54-5994-4201-b400-c622f4d7b216).html.

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The chemical vapour deposition (CVD) of graphene is the most promising route for production of large-area graphene films. However there are still major challenges faced by the field, including control of the graphene coverage, quality, and the number of layers. These challenges can be overcome by developing a fundamental understanding of the graphene growth process. This thesis contributes to the growing body of work on graphene CVD by uniquely exploring the gas phase chemistry and fluid flow in the hot-wall graphene CVD reactor. Firstly the reported parameter space for the hot-wall CVD of graphene on copper was mapped, informing the subsequent work and providing a resource for the wider community. A CVD reactor was constructed to extend this parameter space to lower pressures using methane as a carbon source, and the films were categorised using scanning electron microscopy, Raman spectroscopy and optical dark field microscopy. The latter showed particular promise as a rapid and non-destructive characterization technique for identifying graphene films on the deposition substrate. The gas phase equilibrium compositions were calculated across the parameter space, and correlations between the stabilities of various chemical species and the types of deposition were drawn. This laid a foundation for the remainder of the experimental work, which explored the effect of diluent gases and different feedstocks on the growth to understand the importance of the identified correlations. Diluent gases (argon and nitrogen) were added to the experimental conditions and the thermodynamic model, and were found to reduce the degree of coverage of the graphene films. This result shows that the CVD of graphene is sensitive to factors other than the thermodynamic state parameters, such as the fluid flow profile in the reactor and inelastic collisions between the higher mass diluent gases and the methane/hydrogen/copper system. Using a nitrogen diluent raises the equilibrium carbon vapour pressure and seems to allow larger graphene grains to form. This suggests that thermodynamic factors can contribute to the nucleation of graphene films. Varying the hydrocarbon feedstock and the process conditions indicated that the structure of the deposited carbon is closely related to the nucleation kinetics. Three nucleation regimes are associated with different types of deposition: homogeneous nucleation with amorphous carbon or soot; uncatalysed nucleation with multilayer deposition; and nucleation processes controlled by the copper substrate withpredominantly monolayer deposition. Changing the feedstock from methane to acetylene resulted in poorer graphene coverage, showing that thermodynamic control does not apply in the portion of the parameter space at the high temperatures and lowpressures most successfully used for the deposition of continuous graphene monolayers.

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Boreland, Matt School of Electrical Engineering UNSW. "Laser Crystallisation of Silicon for Photovoltaic Applications using Copper Vapour Lasers." Awarded by:University of New South Wales. School of Electrical Engineering, 1999. http://handle.unsw.edu.au/1959.4/17190.

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Thin film silicon on low temperature glass substrates is currently seen as the best path toreduce the $/W cost of photovoltaic (PV) modules. However, producing thin film polysilicon, on glass, is an ongoing research challenge. Laser crystallisation of a-Si is one of the possible methods. Typically excimer (XMR) lasers are used for laser crystallisation. This thesis introduces the copper vapour laser (CVL) as a viable alternative for thin film photovoltaic applications. The CVL, like the XMR, is a high powered, pulsed laser. However, the CVL has higher pulse rates (4-20kHz), better beam quality and a visible wavelength output (578 & 511nm). Preliminary experiments, using 600K-heated silicon-on-quartz samples, confirmed that CVL crystallisation can produce area weighted average grain size of 0.1-0.15??m, which is comparable to results reported for XMR??? s. Importantly, the CVL results used thicker films (1??m), which is more applicable to thin photovoltaic devices that need 1-10??m of silicon to be viable. The CVL??? s longer wavelength and therefore longer penetration depth (1/alpha) are proffered as the main reason for this result. Extensive laser-thermal modelling highlighted further opportunities specific to CVL crystallisation. Through-the-glass doublesided irradiation was shown in simulations to reduce thermal gradients, which would enhance crystal growth. The simulations also produced deeper melts at lower surface temperatures, reducing the thermal stress on the sample. Subsequent experiments, using silicon-on-glass, confirmed the benefit of through-the-glass doublesided irradiation by maintaining grain sizes without the usual need for substrate heating. Furthermore, Raman analysis showed that doublesided crystallisation achieved full depth crystallisation, unlike single side irradiation which produced partial crystallisation. A new mode of crystallisation, stepwise crystallisation, was also postulated whereby a series of CVL pulses could be used to incrementally increase the crystallisation depth into the silicon. Simulations confirmed the theoretical basis of the concept, with HeNe Raman spectroscopy and analysis of surface grain sizes providing indirect experimental support. The CVL??? s ability to crystallise thicker films more directly applicable to photovoltaic devices secures its viability as an alternative laser for photovoltaic applications. The through-the-glass doublesided irradiation and the stepwise crystallisation provide additional potential for increased process flexibility over XMR???s.

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Boreland, Matt. "Laser crystallisation of silicon for photovoltaic applications using copper vapour lasers." [Sydney : University of New South Wales], 1999. http://www.library.unsw.edu.au/~thesis/adt-NUN/public/adt-NUN1999.0055/index.html.

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Books on the topic "Copper vapour"

1

1954-, Rochefort Paul Adrien, ed. An externally heated copper vapour laser. Chalk River, Ont: Physical Chemistry Branch, Chalk River Laboratories, 1993.

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2

Great Britain. Energy Efficiency Office., AEA Technology. Energy Technology Support Unit., W. S. Atkins Management Consultants., and Alloa Brewery Co Ltd, eds. Copper vapour heat recovery using a spiral heat exchanger: A demonstration at Alloa Brewery Co. Harwell: ETSU, 1988.

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He, Wenlong. Vapor copper: A potential wood preservative. 1996.

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Chang, J. J. New applications of copper vapor lasers in micromachining. 1994.

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S, Mathad G., Rathore Harzara S, and Arita Y, eds. Interconnect and contact metallization for ULSI: Proceedings of the international symposium. Pennington, N.J: Electrochemical Society, 2000.

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Book chapters on the topic "Copper vapour"

1

Sabotinov, N. V. "Copper Bromide Lasers." In Pulsed Metal Vapour Lasers, 113–24. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-1669-2_11.

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Ivanov, B., C. Popov, V. Shanov, and D. Filipov. "LCVD with Copper Vapour and Copper Bromide Vapour Lasers — Review." In High Power Lasers — Science and Engineering, 505–26. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-015-8725-9_32.

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Isaev, A. A. "Transformation of Copper and Copper Bromide Laser Radiation in Non-Linear Processes." In Pulsed Metal Vapour Lasers, 289–301. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-1669-2_30.

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Walter, W. T. "Copper Lasers in the Beginning." In Pulsed Metal Vapour Lasers, 15–26. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-1669-2_2.

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Kearsley, A. J., M. Knowles, and R. Foster-Turner. "Copper Laser Machining of Ceramics." In Pulsed Metal Vapour Lasers, 353–58. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-1669-2_36.

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Kazaryan, M. A. "Copper Vapour Lasers in Oncology." In Pulsed Metal Vapour Lasers, 409–14. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-1669-2_44.

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Webb, C. E., and G. P. Hogan. "Copper Laser Kinetics - A Comparative Study." In Pulsed Metal Vapour Lasers, 29–42. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-1669-2_3.

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Bergmann, H. W., C. Körner, M. Hartmann, and R. Mayerhofer. "Precision Machining with Copper Vapour Lasers." In Pulsed Metal Vapour Lasers, 317–30. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-1669-2_33.

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Coutts, D. W., A. C. J. Glover, E. K. Illy, D. J. W. Brown, and J. A. Piper. "UV Micromachining Using Copper Vapour Lasers." In Pulsed Metal Vapour Lasers, 365–70. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-1669-2_38.

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Brown, D. J. W., and D. W. Coutts. "Beam Quality Issues in Copper Vapour Lasers." In Pulsed Metal Vapour Lasers, 241–54. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-1669-2_25.

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Conference papers on the topic "Copper vapour"

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Ainsworth, Mark D., David W. Coutts, and James A. Piper. "Wavelength Extension Of Copper Vapour Lasers." In OE/LASE '89, edited by Jin J. Kim, Randy Kimball, and P. J. Wisoff. SPIE, 1989. http://dx.doi.org/10.1117/12.951235.

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Kazaryan, Mishik A., Vycheslav Batenin, Vyacheslav Karpukhin, Nikolay Lyabin, Mikhail Malikov, Victor Sachkov, and Ivan Feofanov. "Characteristics of inductive coaxial copper vapour lasers." In XIII International Conference on Atomic and Molecular Pulsed Lasers, edited by Andrei M. Kabanov and Victor F. Tarasenko. SPIE, 2018. http://dx.doi.org/10.1117/12.2303584.

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Lewis, R. R., G. A. Naylor, N. Salkeld, A. J. Kearsley, and C. E. Webb. "Improvements In Copper Vapour Laser Technology: New Applications." In OE LASE'87 and EO Imaging Symp (January 1987, Los Angeles), edited by Lee R. Carlson. SPIE, 1987. http://dx.doi.org/10.1117/12.939662.

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Knowles, Martyn, Richard Benfield, Antony Andrews, and Andrew Kearsely. "Development of high power compact kinetically enhanced copper vapour lasers." In ICALEO® 2000: Proceedings of the Laser Materials Processing Conference. Laser Institute of America, 2000. http://dx.doi.org/10.2351/1.5059412.

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Bergmann, H. W. "Technological aspects and theoretical description of copper vapour laser processing." In ICALEO® ‘95: Proceedings of the Laser Materials Processing Conference. Laser Institute of America, 1995. http://dx.doi.org/10.2351/1.5058937.

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Withford, M. J., D. J. W. Brown, R. J. Carman, and J. A. Piper. "Boosted Laser Output by Kinetics Enhancement in Copper Vapour Lasers." In Proceedings of European Meeting on Lasers and Electro-Optics. IEEE, 1996. http://dx.doi.org/10.1109/cleoe.1996.562071.

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Wadsworth, W. J., D. W. Coutts, and C. E. Webb. "Damage Free Power Scaling of Copper Vapour Laser Pumped Ti:Sapphire lasers." In Advanced Solid State Lasers. Washington, D.C.: OSA, 1996. http://dx.doi.org/10.1364/assl.1996.tl11.

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Wu, Yimin A., Susannah Speller, Graham Creeth, Jurek Sadowski, Christopher S. Allen, and Jamie H. Warner. "Large single crystals of graphene on melted copper using chemical vapour deposition." In 2012 IEEE 12th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2012. http://dx.doi.org/10.1109/nano.2012.6322121.

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McGonigle, A. J. S., D. W. Coutts, and C. E. Webb. "Multi kHz PRF cerium lasers pumped by frequency doubled copper vapour lasers." In Advanced Solid State Lasers. Washington, D.C.: OSA, 2001. http://dx.doi.org/10.1364/assl.1999.wb8.

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Loffhagen, Detlef, Dirk Uhrlandt, and Kai Hencken. "Monte Carlo simulation of the breakdown in copper vapour at low pressure." In 2010 24th International Symposium on Discharges and Electrical Insulation in Vacuum (ISDEIV). IEEE, 2010. http://dx.doi.org/10.1109/deiv.2010.5625806.

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Reports on the topic "Copper vapour"

1

Rothman, A. Wick wetting experiments for copper vapor lasers. Office of Scientific and Technical Information (OSTI), January 1986. http://dx.doi.org/10.2172/7120617.

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2

Warner, B. E., C. D. Boley, J. J. Chang, E. P. Dragon, M. A. Havstad, M. Martinez, and W. II McLean. Ablative material removal utilizing the copper vapor laser. Office of Scientific and Technical Information (OSTI), August 1995. http://dx.doi.org/10.2172/108082.

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Lamb, R. N., M. Grunze, J. Baxter, C. W. Kong, and W. N. Unertl. Vapor Deposition of Polyimide and Polyimide Precursors on Copper. Fort Belvoir, VA: Defense Technical Information Center, August 1990. http://dx.doi.org/10.21236/ada225729.

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McLean, W. II, E. Fehring, E. Dragon, and B. Warner. High rate PLD of diamond-like-carbon utilizing copper vapor lasers. Office of Scientific and Technical Information (OSTI), August 1994. http://dx.doi.org/10.2172/125098.

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Author, Not Given. Chemical vapor deposition of copper for integrated circuits. Final CRADA project report. Office of Scientific and Technical Information (OSTI), January 1994. http://dx.doi.org/10.2172/10130179.

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