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Journal articles on the topic 'CIGSSe'

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Author: Grafiati

Published: 10 December 2022

Last updated: 28 January 2023

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1

Hassan, Muhammad Aamir, Muhammad Mujahid, and Lydia Helena Wong. "Multi Band Gap Cu(In,Ga)(S,Se)₂ Thin Films Deposited by Spray Pyrolysis for High Performance Solar Cell Devices." Materials Science Forum 864 (August 2016): 143–48. http://dx.doi.org/10.4028/www.scientific.net/msf.864.143.

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The performance of copper indium gallium disulfoselenide (CIGSSe) solar cells strongly depends on the band bap of absorbing layer of CIGSSe. The device performance can be improved by fabricating multi band gap layer of CIGSSe. However, the fabrication of multi band gap CIGSSe using non-vacuum techniques is challenging. In this study, we fabricated solar cell devices which consisted of multi band gap Cu (In,Ga)(S,Se)2 thin films. The CIGS thin films were prepared by the spray-pyrolysis of aqueous precursor solutions of gallium (gallium chloride; GaCl3), copper (indium chloride; CuCl2), indium (indium chloride; InCl3), and Sulphur (thiourea; (SC(NH2)2) sources on Mo-coated glass substrate. The as-sprayed thin films were then selenized at 500 °C for 10 minutes.After selenization, CIGS films were transformed to Cu (In,Ga)(S,Se)2 (CIGSSe). The CIGS films with different composition were deposited again on top of selenized CIGSSe films and selenization process was repeated, hence multi band gap CIGSSe films were fabricated. The Chemical bath deposition (CBD) process was used to deposit cadmium sulphide (CdS) buffer layer. The solar cell fabricated with the device configuration of glass/Mo/CIGSSe/CdS/i-ZnO/AZO showed a power conversion efficiency of 6.51%.

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2

Mitzi, David B., Oki Gunawan, Teodor K. Todorov, and D. Aaron R. Barkhouse. "Prospects and performance limitations for Cu–Zn–Sn–S–Se photovoltaic technology." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 371, no. 1996 (August 13, 2013): 20110432. http://dx.doi.org/10.1098/rsta.2011.0432.

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While cadmium telluride and copper–indium–gallium–sulfide–selenide (CIGSSe) solar cells have either already surpassed (for CdTe) or reached (for CIGSSe) the 1 GW yr −1 production level, highlighting the promise of these rapidly growing thin-film technologies, reliance on the heavy metal cadmium and scarce elements indium and tellurium has prompted concern about scalability towards the terawatt level. Despite recent advances in structurally related copper–zinc–tin–sulfide–selenide (CZTSSe) absorbers, in which indium from CIGSSe is replaced with more plentiful and lower cost zinc and tin, there is still a sizeable performance gap between the kesterite CZTSSe and the more mature CdTe and CIGSSe technologies. This review will discuss recent progress in the CZTSSe field, especially focusing on a direct comparison with analogous higher performing CIGSSe to probe the performance bottlenecks in Earth-abundant kesterite devices. Key limitations in the current generation of CZTSSe devices include a shortfall in open circuit voltage relative to the absorber band gap and secondarily a high series resistance, which contributes to a lower device fill factor. Understanding and addressing these performance issues should yield closer performance parity between CZTSSe and CdTe/CIGSSe absorbers and hopefully facilitate a successful launch of commercialization for the kesterite-based technology.

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3

Marlein, J., K. Decock, and M. Burgelman. "Analysis of electrical properties of CIGSSe and Cd-free buffer CIGSSe solar cells." Thin Solid Films 517, no. 7 (February 2009): 2353–56. http://dx.doi.org/10.1016/j.tsf.2008.11.048.

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4

Buffiere, Marie, Abdel Aziz El Mel, Nick Lenaers, Guy Brammertz, Armin E. Zaghi, Marc Meuris, and Jef Poortmans. "Surface Cleaning and Passivation of Chalcogenide Thin Films Using S(NH₄)₂ Chemical Treatment." Solid State Phenomena 219 (September 2014): 320–23. http://dx.doi.org/10.4028/www.scientific.net/ssp.219.320.

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Chalcopyrite ternary and kesterite quaternary thin films, such as Cu (In,Ga)(S,Se)2and Cu2ZnSn (S,Se)4generically referred to as CIGSSe and CZTSSe, respectively, have become the subject of considerable interest and study for semiconductor devices in recent years [1,2]. These materials are of particular interest for use as an absorber layer in photovoltaic devices. In thin film solar cells, the p-type CIGSSe or CZTSSe layer is combined with an n-type semiconductor thin film such as CdS buffer layer to form the p-n heterojunction of the device. The synthesis process of the CIGSSe or CZTSSe absorber layer requires temperatures ranging between 400 and 600 °C to form the photoactive chalcopyrite or kesterite phases [3,4]. During the synthesis process, the formation of trace amounts of binary/ternary compositions (i.e., undesirable secondary or impurity phases consisting of selenides, oxides, carbonates, etc.) may occur. These trace amounts of impurity phases may form at the nascent absorber surfaces, which could negatively affects the photovoltaic conversion efficiencies of solar cells [5-7]. Therefore, prior to the deposition of the CdS buffer layer, there is a need to clean the CIGSSe or CZTSSe surfaces to remove any possible traces of such impurities.

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5

Gour, Kuldeep S., Rahul Parmar, Rahul Kumar, and Vidya N. Singh. "Cd-Free Zn(O,S) as Alternative Buffer Layer for Chalcogenide and Kesterite Based Thin Films Solar Cells: A Review." Journal of Nanoscience and Nanotechnology 20, no. 6 (June 1, 2020): 3622–35. http://dx.doi.org/10.1166/jnn.2020.17537.

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Cd is categorized as a toxic material with restricted use in electronics as there are inherent problems of treating waste and convincing consumers that it is properly sealed inside without any threat of precarious leaks. Apart from toxicity, band-gap of CdS is about 2.40–2.50 eV, which results significant photon loss in short-wavelength range which restricts the overall performance of solar cells. Thin film of Zn(O,S) is a favorable contender to substitute CdS thin film as buffer layer for CuInGaSe2 (CIGS), CuInGa(S,Se)2 (CIGSSe), Cu2ZnSn(S,Se)4 (CZTSSe) Cu2ZnSnSe4 (CZTSe), Cu2ZnSnS4 (CZTS) thin film absorber material based photovoltaic due to it made from earth abundant, low cost, non-toxic materials and its ability to improve the efficiency of chalcogenide and kesterite based photovoltaic due to wider band-gap which results in reduction of absorption loss compared to CdS. In this review, apart from mentioning various deposition technique for Zn(O,S) thin films, changes in various properties i.e., optical, morphological, and opto-electrical properties of Zn(O,S) thin film deposited using various methods utilized for fabricating solar cell based on CIGS, CIGSSe, CZTS, CZTSe and CZTSSe thin films, the material has been evaluated for all the properties of buffer layer (high transparency for incident light, good conduction band lineup with absorber material, low interface recombination, high resistivity and good device stability).

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6

Aswad, Ammar J., Nadeem K. Hassan, and Adnan R. Ahmed. "Simulation and Numerical Modelling of CIGSSe-Based Solar Cells by AFORS-HET." Journal of Physics: Conference Series 2114, no. 1 (December 1, 2021): 012075. http://dx.doi.org/10.1088/1742-6596/2114/1/012075.

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Abstract A general equation to determine properties of penternary solar cell based on Cu (In, Ga) (Se, S) 2 (CIGSSe) with a double buffer layer ZnS/Zn0.8Mg0.2O(ZMO) were derived. Numerical analysis of a (CIGSSe) solar cell with a double buffer layer ZnS/ZMO, CdS free absorber layer, were investigated using the AFORS-HET software simulation. Taking into consideration the effect of thickness and doping concentration for the CIGSSe absorption layer, ZnS buffer layer and ZnO:B(BZO) window layer on the electron transport, short circuit current density (Jsc) and open circuit voltage (Voc); numerical simulation demonstrated that the changes in band structure characteristics occurred. The solar energy conversion efficiency is 28.34%, the filling factor is 85.59%, the open circuit voltage is 782.3 mV, the short circuit current is 42.32 mA. then we take the range of the gradient between the ratio of x and y for the absorption layer, and the best result of Voc, Jsc, FF, Eff equal (838.7 mV, 40.94 mA/cm2, 86.23%, 29.61%) respectively at x= 0, y= 0.26.

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7

Cho, Yunae, Na Kyoung Youn, Soomin Song, Jiseon Hwang, Tanka Raj Rana, Ara Cho, Seung Kyu Ahn, et al. "A novel two-stage hybrid processing technique towards industrial manufacturing of the Cu(In,Ga)(S,Se)2 solar cell with materially efficient fabrication." Journal of Materials Chemistry A 7, no. 19 (2019): 11651–58. http://dx.doi.org/10.1039/c9ta02954k.

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8

Tomizawa, Takeshi, Reo Usui, Takeshi Okato, and Hidefumi Odaka. "Development of Selenization/Sulfurization Process for High Quality Cu(In, Ga)(S, Se)2 Solar Cells on High Strain Point Glass Substrates." MRS Proceedings 1493 (2013): 225–29. http://dx.doi.org/10.1557/opl.2013.408.

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ABSTRACTThis study provides a recipe of a 2-step selenization and sulfurization method for high strain point (HSP) glass to improve the quality of Cu(In, Ga)(S, Se)2 (CIGSSe). The recipe is distinguished by slow selenization growth before sulfurization growth at the high temperature of 580 °C. We used proto-type HSP glass instead of standard soda lime glass (SLG) to tolerate this higher temperature process. The provided slow selenization recipe improved an averaged relative efficiency by 14 percent compared to a rapid selenization recipe. We confirmed the improvement of the quality of CIGSSe which was characterized by the high crystal quality, the smooth surface, the uniform depletion layer and reduced defects as measured by XRD, SEM, EBIC and Admittance spectroscopy.

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9

Flammini, Marco Giacomo, Nicola Debernardi, Maxime Le Ster, Brendan Dunne, Johan Bosman, and Mirjam Theelen. "The Influence of Heating Time and Temperature on the Properties of CIGSSe Solar Cells." International Journal of Photoenergy 2016 (2016): 1–7. http://dx.doi.org/10.1155/2016/4089369.

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Nonencapsulated CIGSSe solar cells, with a silver grid, were exposed to different temperatures for various periods in order to measure the effect of the heat exposure in CIGSSe modules. The heat treatment time and temperature were varied during the experiments, which were executed at atmospheric conditions. In all the cases, after reaching a temperature of about 300°C, theIVmeasurement showed a reduction of 2-3% in terms ofVOCandJSC. This is confirmed, respectively, by Raman and EQE measurements as well. The efficiency drop was −7%, −29%, and −48%, respectively, for 30 seconds, 300 seconds, and 600 seconds of exposure time. With temperatures larger than 225°C, the series resistance starts to increase exponentially and a secondary barrier becomes visible in theIVcurve. This barrier prevents the extraction of electrons and consequently reducing the solar cells efficiency. Lock-in thermography demonstrated the formation of shunts on the mechanical scribes only for 300 and 600 seconds exposure times. The shunt resistance reduction is in the range of 5% for all time periods.

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10

Tong, Hao, Ziming Kou, Ming Zhao, Daming Zhuang, Chen Wang, and Yuxian Li. "Influences of Mg concentration in ZnMgO film on energy band alignment at CIGSSe/Zn1-xMgxO interface and performances of CIGSSe solar cells." Solar Energy 246 (November 2022): 216–23. http://dx.doi.org/10.1016/j.solener.2022.09.039.

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11

Свитенков, И. Е., В. Н. Павловский, Е. В. Муравицкая, Е. В. Луценко, Г. П. Яблонский, О. М. Бородавченко, В. Д. Живулько, А. В. Мудрый, М. В. Якушев, and С. О. Когновицкий. "Спонтанное и стимулированное излучение в тонких пленках твердых растворов Cu(In-=SUB=-1-x-=/SUB=-Ga-=SUB=-x-=/SUB=-)(S-=SUB=-y-=/SUB=-Se-=SUB=-1-y-=/SUB=-)-=SUB=-2-=/SUB=- в составе солнечных элементов." Физика и техника полупроводников 54, no. 10 (2020): 1058. http://dx.doi.org/10.21883/ftp.2020.10.49943.9466.

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The results of a study of the emission spectra of thin nanocrystalline films of Cu(In1-xGax)(SySe1-y)2 (CIGSSe) direct-band-gap solid solutions in the structure of solar cells at ~ 0.5 W/cm2 continuous wave and nanosecond pulsed laser excitation in the range of excitation power density 0.1 - 53 kW/cm2 and temperatures of 10-300 K are presented. It was found that stimulated emission (SE) occurs in thin CIGSSe films in the temperature range from 10 K to 90 K in the spectral region h = 1.062 - 1.081 eV with a minimum threshold pump level of about 1 kW/cm2. It was shown, that, with increasing intensity of the exciting emission, the spontaneous emission bands shift toward higher energies. It was found that the photoluminescence bands at low excitation levels and the SE bands shift with increasing temperature toward higher energies, and the PL bands at high excitation levels shift toward low energies. Possible causes and mechanisms of the influence of temperature and excitation intensity on the spectral positions of spontaneous and SE of the films of solid solutions are discussed.

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12

Ahmed, Hamsa, Mohamed Elshabasi, Jörg Ohland, Marko Stölzel, Alfons Weber, Robert Lechner, Thomas Dalibor, Jürgen Parisi, Sascha Schäfer, and Stephan J. Heise. "Temperature coefficient characterization of CIGSSe solar cells with layer modifications." Solar Energy Materials and Solar Cells 225 (June 2021): 111059. http://dx.doi.org/10.1016/j.solmat.2021.111059.

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13

Künecke, Ulrike, Matthias Schuster, and Peter Wellmann. "Analysis of Compositional Gradients in Cu(In,Ga)(S,Se)2 Solar Cell Absorbers Using Energy Dispersive X-ray Analysis with Different Acceleration Energies." Materials 14, no. 11 (May 26, 2021): 2861. http://dx.doi.org/10.3390/ma14112861.

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The efficiency of Cu(In,Ga)(S,Se)2 (CIGSSe) solar cell absorbers can be increased by the optimization of the Ga/In and S/Se gradients throughout the absorber. Analyzing such gradients is therefore an important method in tracking the effectiveness of process variations. To measure compositional gradients in CIGSSe, energy dispersive X-ray analysis (EDX) with different acceleration energies performed at both the front surface and the backside of delaminated absorbers was used. This procedure allows for the determination of compositional gradients at locations that are millimeters apart and distributed over the entire sample. The method is therefore representative for a large area and yields information about the lateral homogeneity in the millimeter range. The procedure is helpful if methods such as secondary ion-mass (SIMS), time-of-flight SIMS, or glow-discharge optical emission spectrometry (GDOES) are not available. Results of such EDX measurements are compared with GDOES, and they show good agreement. The procedure can also be used in a targeted manner to detect local changes of the gradients in inhomogeneities or points of interest in the µm range. As an example, a comparison between the compositional gradients in the regular absorber and above the laser cut separating the Mo back contact is shown.

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14

Cui, Yong, Hongmei Shao, Zhiwei Zhang, Zihan Wang, Jing Li, Shi Liu, and Gang Wang. "Fabrication of CIGSSe Thin Film Solar Cells with Colloidal Synthesized CuIn0.7Ga0.3S2 Nanocrystals." Journal of Nanoscience and Nanotechnology 20, no. 4 (April 1, 2020): 2578–83. http://dx.doi.org/10.1166/jnn.2020.17209.

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15

Tai, Kong Fai, Talia Gershon, Oki Gunawan, and Cheng Hon Alfred Huan. "Examination of electronic structure differences between CIGSSe and CZTSSe by photoluminescence study." Journal of Applied Physics 117, no. 23 (June 16, 2015): 235701. http://dx.doi.org/10.1063/1.4922493.

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16

McLeod, Steven M., Charles J. Hages, Nathaniel J. Carter, and Rakesh Agrawal. "Synthesis and characterization of 15% efficient CIGSSe solar cells from nanoparticle inks." Progress in Photovoltaics: Research and Applications 23, no. 11 (January 28, 2015): 1550–56. http://dx.doi.org/10.1002/pip.2588.

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17

Albalawneh, G. M., M. M. Ramli, M. Z. M. Zain, Z. Sauli, M. Nabiałek, and K. Jeż. "Simulation of The Impact of Bulk Selenium Composition Variation in CIGSSe Solar Cell." Acta Physica Polonica A 142, no. 1 (July 2022): 28–31. http://dx.doi.org/10.12693/aphyspola.142.28.

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18

Palm, J., V. Probst, W. Stetter, R. Toelle, S. Visbeck, H. Calwer, T. Niesen, et al. "CIGSSe thin film PV modules: from fundamental investigations to advanced performance and stability." Thin Solid Films 451-452 (March 2004): 544–51. http://dx.doi.org/10.1016/j.tsf.2003.10.160.

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19

Baek, Hyeon-ji, Ji A. Oh, Young-Eun Seo, Hye-Jin Shin, Sung-Wook Cho, and Chan-Wook Jeon. "UV-illuminated chemical bath deposition of CdS buffer layer for CIGSSe solar cells." Current Applied Physics 20, no. 1 (January 2020): 65–70. http://dx.doi.org/10.1016/j.cap.2019.10.005.

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20

Hung, Yu-Jen, and Yi-Cheng Lin. "Study on Na-Ga-F compound in CIGSSe absorber prepared by CuGa-NaF target." Materials Science in Semiconductor Processing 147 (August 2022): 106722. http://dx.doi.org/10.1016/j.mssp.2022.106722.

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21

Wang, C., D. Zhuang, M. Zhao, Y. Li, H. Tong, H. Wang, J. Wei, and Q. Gong. "High-performance sub-micron CIGSSe solar cells optimized for sodium doping by adjusting diffusion barriers." Chemical Engineering Journal 439 (July 2022): 135713. http://dx.doi.org/10.1016/j.cej.2022.135713.

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22

Allsop, N. A., C. Camus, A. Hänsel, S. E. Gledhill, I. Lauermann, M. C. Lux-Steiner, and Ch H. Fischer. "Indium sulfide buffer/CIGSSe interface engineering: Improved cell performance by the addition of zinc sulfide." Thin Solid Films 515, no. 15 (May 2007): 6068–72. http://dx.doi.org/10.1016/j.tsf.2006.12.084.

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23

Farias-Basulto, G. A., P. Reyes-Figueroa, C. Ulbrich, B. Szyszka, R. Schlatmann, and R. Klenk. "Validation of a multiple linear regression model for CIGSSe photovoltaic module performance and Pmpp prediction." Solar Energy 208 (September 2020): 859–65. http://dx.doi.org/10.1016/j.solener.2020.08.040.

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24

Lindner, S., W. Bohne, A. Jäger-Waldau, M. Ch Lux-Steiner, J. Röhrich, and G. Vogl. "Investigations of atomic diffusion at CIGSSe/ZnSe interfaces with heavy ion elastic recoil detection analysis (HI-ERDA)." Thin Solid Films 403-404 (February 2002): 432–37. http://dx.doi.org/10.1016/s0040-6090(01)01540-1.

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25

Park, Se Jin, Jin Woo Cho, Gi Soon Park, Jae Seung Jeong, Jihyun Kim, Doo-Hyun Ko, Yun Jeong Hwang, and Byoung Koun Min. "A Comparative Study of Nanoparticle-Ink-Based CIGSSe Thin Film Solar Cells on Different Back Contact Substrates." Bulletin of the Korean Chemical Society 37, no. 3 (February 17, 2016): 361–65. http://dx.doi.org/10.1002/bkcs.10684.

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26

Choi, Woo-Jin, Wan Woo Park, Yangdo Kim, Chang Sik Son, and Donghyun Hwang. "The Effect of ALD-Zn(O,S) Buffer Layer on the Performance of CIGSSe Thin Film Solar Cells." Energies 13, no. 2 (January 15, 2020): 412. http://dx.doi.org/10.3390/en13020412.

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In this paper, we report the development of Cd-free buffers using atomic layer deposition (ALD) for Cu(In,Ga)(S,Se)2-based solar cells. The ALD process gives good control of thickness and the S/S +O ratio content of the films. The influence of the growth per cycle (GPC) and the S/(S+O) ratio, and the glass temperature of the atomic layer deposited Zn(O,S) buffer layers on the efficiency of the Cu(In,Ga)(S,Se)2 solar cells were investigated. We present the first results from our work on cadmium-free CIGS solar cells on substrates with an aperture area of 0.4 cm2. These Zn(O,S) layers were deposited by atomic layer deposition at 120 °C with S/Zn ratios of 0.7, and layers of around 30 nm. The Zn(O,S) 20% (Pulse Ratio: H2S/H2O+H2S) process results in a S/Zn ratio of 0.7. We achieved independently certified aperture area efficiencies of 17.1% for 0.4 cm2 cells.

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27

Priya, Alisha, Amit Prakash, and Shiva Nand Singh. "Impact of ZnMnO buffer and SnMnO2 window layer on enhancing the performance of CIGSSe thin-film solar cell." Optical Materials 123 (January 2022): 111690. http://dx.doi.org/10.1016/j.optmat.2021.111690.

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28

Chua, Rou Hua, Xianglin Li, Thomas Walter, Lay Kuan Teh, Thomas Hahn, Frank Hergert, Subodh Mhaisalkar, and Lydia Helena Wong. "An experimentally supported model for the origin of charge transport barrier in Zn(O,S)/CIGSSe solar cells." Applied Physics Letters 108, no. 4 (January 25, 2016): 043505. http://dx.doi.org/10.1063/1.4940913.

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29

Kumar, Raushan, and Akhilesh Kumar. "Efficiency improvement of ZnMgO/CIGSSe heterojunction solar cell by using double graded Cu2O ER-HTL and CeMgO2 HR-ETL materials." Optical Materials 131 (September 2022): 112697. http://dx.doi.org/10.1016/j.optmat.2022.112697.

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30

Sharma, Shailesh Narain, Parul Chawla, and Pooja Semalti. "Solution route processed and organically-Capped Quinary CuIn1-xGax(SySe1-y)2 (CIGSSe) inks for use in low-cost photovoltaics." Materials Chemistry and Physics 282 (April 2022): 125903. http://dx.doi.org/10.1016/j.matchemphys.2022.125903.

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31

Nishimura, Takahito. "(Invited, Digital Presentation) Application of Transition Metal Dichalcogenides for Chalcopyrite Solar Cells." ECS Meeting Abstracts MA2022-02, no. 16 (October 9, 2022): 829. http://dx.doi.org/10.1149/ma2022-0216829mtgabs.

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Introduction Chalcopyrite compound materials, such as Cu(In,Ga)Se2 (CIGSe), Cu(In,Ga)S2 (CIGS), and Cu(In,Ga)(S,Se)2, are expected as promising photovoltaic materials since they can be applied for flexible light-weight solar cells, which realize a high-speed and low-cost production utilizing a roll-to-roll process. In this work, transition metal dichalcogenides, i.e., MoSe2 and MoS2 are applied to develop new functions in the chalcopyrite solar cells. First, a device peeling technique for CIGSe solar cells are developed by utilizing two-dimensional MoSe2 atomic layers. To boost an electric power generation via collecting of the ground albedo radiation, bifacial-type structures for the flexible CIGSe solar cells are constructed by depositing a TCO layer on CIGS rear side after applying device-peeling technique to traditional substrate-type structure. Second, an interfacial control technique to modify CIGS absorber / Mo back contact interfaces for the wide-gap CIGS solar cells are developed by introducing a p+-type MoS2 layer, where the carrier concentration is controlled by Nb-doping. Experimental methods 1. Peeling techniques for flexible-bifacial CIGSe solar cells 2-μm-thick CIGSe absorber was prepared on a Mo-covered glass substrate using a three-stage process, where the MoSe2 atomic layers were intentionally formed to control the adhesion at the Mo/CIGSe interface. CIGSe solar cells with a structure of glass/Mo/CIGSe/CdS/i-ZnO/Al:ZnO/Ni-Al grids were fabricated (Figure 1 (a)). For the peeling-off procedure, fluorinated ethylene propylene (FEP) films as alternative flexible substrates were attached to the front side with thermosetting epoxy glue under a temperature of 100 °C. While cooling down to room temperature, residual stress remained in the epoxy glue and FEP films due to their higher thermal expansion coefficients. Therefore, the CIGSe/CdS/i-ZnO/Al:ZnO/epoxy/FEP layers spontaneously detached from the Mo-covered glass. Finally, flexible-bifacial CIGSe solar cells were completed via deposition of 300-nm-thick ITO films on the rear side of the CIGSe by sputtering methods. 2. Fabrication of Nb-doped MoS2 and wide-gap CIGS solar cells 20-nm-thick Nb-Mo metal precursors were deposited on glass substrates via co-sputtering methods utilizing Mo and Nb targets. The sulfurization process for 30 min at 600 °C under H2S/Ar atmosphere was performed on the Nb-Mo metal precursors to form the p+-type Nb-doped MoS2 (Nb:MoS2) films. Hall effect measurement was performed for the Nb:MoS2 films to evaluate their electrical properties. The wide-gap CIGS solar cells with a structure of glass/Mo/Nb:MoS2/CIGS/CdS/i-ZnO/Al:ZnO/Ni-Al grids were fabricated (Figure 1 (b)). The Nb:MoS2 thin films with the [Nb] / ([Nb] + [Mo]) ratios of 0 and 0.02 were deposited on a Mo-covered glass substrate. Then, 2-μm-thick CIGS absorber were prepared. Stacked layers of Cu–Ga and Cu–In precursors were deposited using the evaporation method, and followed by a sulfurization process at the substrate temperature of 600 °C under H2S/Ar atmosphere. Results and discussions 1. Conversion efficiency of flexible-bifacial CIGSe solar cells The CIGSe solar cells were successfully peeled from Mo back contacts, when the layered-grown MoSe2 (c-axis orientation) was formed at the Mo/CIGSe interface, suggesting the controllability of interfacial adhesion via cleavage by weak chemical bonding due to van der Waals force in the MoSe2 atomic layers. A high-performance ratio of 95.0% was achieved in the 11.5%-efficient lift-off cells (with alternative Au back contact) compared with 12.1%-efficient substrate cells on Mo back contact. Furthermore, the results demonstrated the device operation as a bifacial solar cell with conversion efficiency, V OC, J SC, and FF of 10.1% 0.487 V, 33.9 mA/cm2, and 0.609 under front illumination and 2.8%, 0.435 V, 9.8 mA/cm2, and 0.658 under rear illumination. 2. Conductivity control of MoS2 interface layer for wide-gap CIGS solar cells Carrier density of Nb:MoS2 thin films was monotonically increased from 9.9 × 1015 to 1.9 × 1020 cm-3 and the conductivity type was inverted from n- to p-type with increasing the [Nb] / ([Nb] + [Mo]) compositional ratio from 0 to 0.06. This result suggests that Nb element acts as an acceptor in MoS2. For the wide-gap CIGS solar cells the, the roll-over in the current density‒voltage curves was observed in the samples with the [Nb] / ([Nb] + [Mo]) ratio of 0 (without Nb-doping) in MoS2, whereas the roll-over was disappeared in the [Nb] / ([Nb] + [Mo]) ratio of 0.02. This demonstrated that a highly doped p-type Nb:MoS2 introduced in the CIGS/Mo back junction improved the performance of wide-gap CIGS solar cells. Conclusions We demonstrated a usefulness of the transition metal dichalcogenides, MoSe2 and MoS2, on the device peeling technique to fabricate the flexible-bifacial CIGSe solar cells and the interfacial modification technique for the wide-gap CIGS solar cells. Acknowledgements We gratefully acknowledge the support of JSPS KAKENHI (20K14780) and Kato Foundation for Promotion of Science (KJ–3020) in Japan. Figure 1

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Priya, Alisha, and Shiva Nand Singh. "Enhancement of efficiency and external quantum efficiency of CIGSSe solar cell by replacement and inserting buffer and Cu2O ER-HTL layer." Superlattices and Microstructures 152 (April 2021): 106840. http://dx.doi.org/10.1016/j.spmi.2021.106840.

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Hones, C., J. Hackenberg, R. Keller, S. Zweigart, A. Fuchs, and S. Siebentritt. "A Novel Fast Process for Zn(O,S) Buffer Layers, Doped With Al and B and Deposited on CIGSSe Solar Cells." IEEE Journal of Photovoltaics 7, no. 3 (May 2017): 864–69. http://dx.doi.org/10.1109/jphotov.2017.2669360.

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Chang, Shu-Hao, Ming-Yi Chiang, Chien-Chih Chiang, Fang-Wei Yuan, Chia-Yu Chen, Bo-Cheng Chiu, Tzu-Lun Kao, Chi-Huang Lai, and Hsing-Yu Tuan. "Facile colloidal synthesis of quinary CuIn1−xGax(SySe1−y)2 (CIGSSe) nanocrystal inks with tunable band gaps for use in low-cost photovoltaics." Energy & Environmental Science 4, no. 12 (2011): 4929. http://dx.doi.org/10.1039/c1ee02341a.

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Schoneberg, Johannes, Jörg Ohland, Patrick Eraerds, Thomas Dalibor, Jürgen Parisi, and Michael Richter. "Accessing the band alignment in high efficiency Cu(In,Ga)(Se,S)2 (CIGSSe) solar cells with an InxSy:Na buffer based on temperature dependent measurements and simulations." Journal of Applied Physics 123, no. 15 (April 21, 2018): 155701. http://dx.doi.org/10.1063/1.5017087.

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Ennaoui, A. "Chemical bath process for highly efficient Cd-free chalcopyrite thin-film-based solar cells." Canadian Journal of Physics 77, no. 9 (February 1, 2000): 723–29. http://dx.doi.org/10.1139/p99-030.

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The highest efficiency for Cu(Ga,In)Se2 (CIGS) thin-film-based solar cells has been achieved with CdS buffer layers prepared by a solution growth method known as the chemical bath deposition (CBD). With the aim of developing Cd-free chalcopyrite-based thin-film solar cells, we describe the basic concepts involved in the CBD technique. The recipes developed in our laboratory for the heterogeneous deposition of good-quality thin films of ZnO, ZnSe, and MnS are presented. In view of device optimization, the initial formation of chemical-bath-deposited ZnSe thin films on Cu(Ga,In)(S,Se)2 (CIGSS) and the subsequent development of the ZnSe/CIGSS heterojunctions were investigated by X-ray photoelectron spectroscopy (XPS). The good surface coverage was controlled by measuring changes in the valence-band electronic structure as well as changes in the In4d, Zn3d core lines. From these measurements, the growth rate was found to be around 3.6 nm/min. The valence band and the conduction band-offsets ΔEV and ΔEC between the layers were determined to be 0.60 and 1.27 eV, respectively for the CIGSS/ZnSe interface. The energy-band diagram is discussed in connection with the band-offsets detemined from XPS data. A ZnSe thickness below 10 nm has been found to be optimum for achieving a homogeneous and compact buffer layer on CIGSS with a total area efficiency of 13.7%.PACS No.: 42.70

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Dhere, Neelkanth G., Ashwani Kaul, and Helio Moutinho. "Effect of Location of Sodium Precursor on the Morphological and Device Properties of CIGS Solar Cells." MRS Proceedings 1538 (2013): 51–60. http://dx.doi.org/10.1557/opl.2013.1053.

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ABSTRACTSodium plays an important role in the development of device quality CIGS (Cu-In-Ga-Se) and CIGSeS (Cu-In-Ga-Se-S) chalcopyrite thin film solar cells. In this study the effect of location of sodium precursor on the device properties of CIGS solar cells was studied. Reduction in the surface roughness and improvement in the crystallinity and morphology of the absorber films was observed with increase in sodium quantity from 0 Å to 40 Å and to 80 Å NaF. It was found that absorber films with 40 Å and 80 Å NaF in the front of the metallic precursors formed better devices compared to those with sodium at the back. Higher open circuit voltages and short circuit current values were achieved for devices made with these absorber films as well.

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Li, Ning, Chao Wang, Ye Tu, Jinming Zhang, and Guanchao Yin. "Micro-concentrated photovoltaics based on Cu(In,Ga)Se₂ microcells: an optical study." European Physical Journal Applied Physics 97 (2022): 1. http://dx.doi.org/10.1051/epjap/2021210215.

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Micro-concentrated Cu(In,Ga)Se2 (µCPV-CIGSe) solar cells offer the potential to greatly reduce the consumption of raw materials while maintaining high efficiencies. A theoretical model of µCPV-CIGSe solar cells, consisting of hexagonally spaced micro-CIGSe (µ-CIGSe) solar cells embedded in the low-index dielectric matrix and µ-lenses placed on top, is proposed for optical study. It is discovered that µ-lenses enable to effectively concentrate the incident light due to the inherent nanojet phenomenon, and the µ-CIGSe absorbers trap the penetrated light within absorbers arising from wave-guided modes. The two effects co-contribute to an optimized absorption for µCPV-CIGSe solar cells with a µ-CIGSe absorber diameter of 800 nm and a pitch of 1500 nm. Short-circuit current density reaches 36.5 mA/cm2 and accounts for 98.8% compared to their plain counterparts without lenses, corresponding to an absorber material saving by a factor of 3/4. Notably, a large contacting area between lenses and CIGSe solar cells are recommended for an improved angular tolerance. Those findings will recommend design principles for further experiments.

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Ramanathan, K., J. Pankow, and S. Asher. "Extrinsic doping effect in the fabrication of CIGS and CIGSS thin film solar cells." physica status solidi (b) 241, no. 3 (March 2004): 767–70. http://dx.doi.org/10.1002/pssb.200304192.

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Kuo, Dong Hau, Yung Chin Tu, and Wei Liang Chen. "Cu(In,Ga)Se₂ Films Deposited by Sputtering with Single Cu(In,Ga)Se₂ and Cu-Ga-In₂Se₃ Targets and a Subsequent Selenization Procedure." Advanced Materials Research 936 (June 2014): 197–201. http://dx.doi.org/10.4028/www.scientific.net/amr.936.197.

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Cu(In,Ga)Se2 (CIGSe) thin films were prepared by sputtering with single CIGSe or Cu-Ga-In2Se3 target and subsequent selenization at 550-700°C. The one- and two-step selenization procedures and the ceramic and cermet targets were used for process comparisons. Microstructure, film growth and film composition were used to evaluate the growth performance. CIGSe films sputtered from the CIGSe target had a low Cu content. CIGSe films prepared with single Cu-Ga-In2Se3 target had shown different performance after the one- and two-step selenization procedures. The two-step process did not grow the dense films due to the vaporization of Se-containing species from the incomplete reaction. The high-temperature requirement is the major disadvantage for the post-selenization approach.

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Kuo, Dong Hau, and Jian Jhih Chen. "Preparation and Characterization of Paste-Printed CIGSe Absorber Layers Sintered with 10% Tellurium or 5% Antimony Sulfide as a Sintering Aid." Advanced Materials Research 664 (February 2013): 463–68. http://dx.doi.org/10.4028/www.scientific.net/amr.664.463.

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The Cu-deficient Cu(In,Ga)Se2 (CIGSe) absorber layer for thin film solar cells was prepared by paste printing its powders followed by sintering at 550  650oC for 1 h with the assistance of sintering aid of 10% Te or 5% Sb2S3 to enhance densification. The variations of crystallinity, microstructure, composition, and electrical properties of resistivity, Hall mobility, and carrier concentration of CIGSe absorber layer with sintering temperature at different sintering aids were investigated. The advantage of this sintering process is the stability in composition and free of the problem of constituent vaporization. The major disadvantage of the CIGSe layer with 5% Sb2S3 as a sintering aid was a 5-time decrease in electrical mobility. Power conversion efficiencies of our devices with sintered CIGSe as an absorber layer were evaluated.

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Zhao, Xin, Mingxuan Lu, Mark J. Koeper, and Rakesh Agrawal. "Solution-processed sulfur depleted Cu(In, Ga)Se2 solar cells synthesized from a monoamine–dithiol solvent mixture." Journal of Materials Chemistry A 4, no. 19 (2016): 7390–97. http://dx.doi.org/10.1039/c6ta00533k.

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A monoamine–dithiol mixture is used to prepare homogeneous Cu(In, Ga)Se₂ (CIGSe) molecular precursor solution, which yields a highly sulfur depleted CIGSe thin-film solar cell with a power conversion efficiency of 12.2%.

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Weinberger, Nikolaus, David Stock, Jochen Mesle, Christian A. Kaufmann, Tobias Bertram, Tim Kodalle, Roland Wuerz, et al. "Realizing Double Graded CIGSe Absorbers With the R2R Hybrid-CIGSe-Process." IEEE Journal of Photovoltaics 11, no. 2 (March 2021): 337–44. http://dx.doi.org/10.1109/jphotov.2020.3045674.

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Zhao, Dandan, Qingwen Tian, Zhengji Zhou, Gang Wang, Yuena Meng, Dongxing Kou, Wenhui Zhou, Daocheng Pan, and Sixin Wu. "Solution-deposited pure selenide CIGSe solar cells from elemental Cu, In, Ga, and Se." Journal of Materials Chemistry A 3, no. 38 (2015): 19263–67. http://dx.doi.org/10.1039/c5ta05300e.

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A novel, robust and low-toxicity solution route to deposit CIGSe thin films for solar cell applications is proposed. The solvent of 1,2-ethanedithiol and 1,2-ethylenediamine is employed for the first time to simultaneously dissolve elemental Cu, In, Ga, and Se. With this solution-processed CIGSe thin film solar cell, an efficiency of 9.5% was achieved.

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Albalawneh, G. M., M. M. Ramli, M. ZM Zain, and Z. Sauli. "The influence of selenium amount added into the graphite box during the selenization of solution deposited CIGSe thin films." Journal of Physics: Conference Series 2053, no. 1 (October 1, 2021): 012008. http://dx.doi.org/10.1088/1742-6596/2053/1/012008.

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Abstract Cu(In,Ga)Se2 (CIGSe) semiconductor is an efficient light absorber material for thin-film solar cell technology. The sequential evaporation of precursor solution, followed by the selenization process, is a promising non-vacuum and low-cost approach for CIGSe thin-film fabrication. The main properties of CIGSe thin films are strongly affected by the post-selenization step. Hence, thorough control of selenization parameters is essential for achieving pure crystalline, large grain films needed for high-performance solar cell devices. In this study, the impact of selenium (Se) amount added during the selenization step was evaluated. The structural, morphological, and compositional properties of the selenized thin films were investigated. The CIGSe precursor film was deposited by a spin-coating technique using a thiol/amine-based solution, followed by annealing with different Se amounts (100, 200, and 300 mg) within a partially closed small round graphite container. In all cases, uniform films of 1.2–1.5 µm thickness with a well-defined single chalcopyrite phase were obtained. It was observed that the grain size and Se content increased with increasing Se mass added. Moreover, the sample selenized with 200 mg Se resulted in higher surface coverage, thinner fine-grained layer, and less MoSe2 formation than the excess Se samples.

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Loisel, Yoann, and Maurice Corcos. "Cigare." Le Carnet PSY 208, no. 5 (2017): 18. http://dx.doi.org/10.3917/lcp.208.0018.

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Neves, F., V. Livramento, I. Martins, L. Esperto, M. Santos, J. B. Correia, K. Muska, and T. Holopainen. "Characterization of Cu2ZnSn(SSe)4 monograin powders by FE-SEM." Microscopy and Microanalysis 19, S4 (August 2013): 101–2. http://dx.doi.org/10.1017/s1431927613001128.

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The design and synthesis of high-efficiency materials to convert solar to electrical energy is an increasingly important research field. Within the photovoltaic technologies, crystalline Si have an 80% share while the remaining 20% are mostly thin film solar cells based on Cu(In,Ga)(S,Se)2 (CIGSSe) and CdTe. However, the cost, the abundance and the environmental impact of the elemental components cannot be neglected. For these reasons, Cu2ZnSnS4 (CZTS), Cu2ZnSnSe4 (CZTSe) and their solid solutions CZTSSe has attracted much attention recently since they can provide the development of cost competitive solar cells. The CZTS-based solar cells consist of earth abundant and relatively inexpensive elements and represent an environmentally friendly alternative compared to the above mentioned systems. The energy conversion efficiency of the CZTS-based solar cells has increased from 0.66% in 1996 to 11.1% recently.The present work shows preliminary results that are related to the characterization of CZTSSe monograin powders by scanning electron microscopy. High purity metal compounds, S and Se powders were used as precursors for the synthesis of the Cu2ZnSn(SSe)4 monograin powders. The precursor powders were mixed to the desired composition and, additionally, KI was added as a flux material. Afterwards, the powders were blended in a mixer and encapsulated in quartz ampoules. The blended powders were degassed under dynamic vacuum at room temperature, sealed and annealed isothermally between 700 ºC and 780 ºC for a time ranging between 44 h and 136 h. After synthesis the flux material was removed with deionized water and the powders were sieved into several fractions. The morphology, microstructure and chemical composition of the synthesized powders was obtained with a Philips XL30 field-emission scanning electron microscope (FE-SEM) equipped with a backscattered electron (BSE) detector and an integrated EDAX energy dispersive X-ray spectroscopy (EDS) microanalysis system.The typical morphology obtained for the CZTSSe powders can be seen in Figure 1. Basically, the particles show a polyhedral morphology with some of them showing a needle shape, i.e. a large shape factor (L/D>>1). Moreover, it was also observed a slight increase of the median particle size with the increase of the synthesis temperature. Due to the complexity of the synthesis of CZTSSe monograins, the formation of binary or ternary phases is a common feature. A very good control over the synthesis parameters is then required not only to obtain the desired phase but also to have a tight control over the stoichiometry of the material. Taking this into account, SEM/BSE observations and EDS analysis are two powerful techniques for evaluate the degree of the compositional homogeneity of the CZTSSe monograins. Figure 2 puts in evidence the degree of the homogeneity of the CZTSSe monograins in relation to their size. Overall, and independently of the synthesis conditions, the powder particles consisted predominantly of CZTSSe monograins and, in a much smaller extent, of particles having a ZnS or ZnS(Se) core coated by a CZTSSe layer. The presence of undesired phases occurred more frequently in the larger powder particles (> 100 µm) and the degree of homogeneity was lower for the powders synthesized at lower temperature and for a shorter time. However, when the EDS results obtained for CZTSSe monograins belonging to different size fractions are compared no major variations in the content of the five elements can be inferred.

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Ümsür, Bünyamin, Wolfram Calvet, Alexander Steigert, Iver Lauermann, Mihaela Gorgoi, Karsten Prietzel, Dieter Greiner, Christian A. Kaufmann, Thomas Unold, and Martha Ch Lux-Steiner. "Investigation of the potassium fluoride post deposition treatment on the CIGSe/CdS interface using hard X-ray photoemission spectroscopy – a comparative study." Physical Chemistry Chemical Physics 18, no. 20 (2016): 14129–38. http://dx.doi.org/10.1039/c6cp00260a.

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Najm, Asmaa Soheil, Hasanain Salah Naeem, Duaa Abdul Rida Musa Alwarid, Abdulwahab Aljuhani, Siti Aishah Hasbullah, Hiba Ali Hasan, Kamaruzzaman Sopian, et al. "Mechanism of Chemical Bath Deposition of CdS Thin Films: Influence of Sulphur Precursor Concentration on Microstructural and Optoelectronic Characterizations." Coatings 12, no. 10 (September 26, 2022): 1400. http://dx.doi.org/10.3390/coatings12101400.

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In this study, we aimed to improve our understanding of the response mechanisms associated with the formation of CdS thin films. CdS thin film remains the most valuable option for many researchers, since it has shown to be an effective buffer material for film-based polycrystalline solar cells (CdTe, CIGSe, CZTS). We performed experimental and numerical simulations to investigate the effect of different thiourea concentrations on the characteristics of the CdS buffer layer. The experimental results reveal that an increase in thiourea concentrations had a direct effect on the optical results, with bandgap values ranging from (2.32 to 2.43) eV. XRD analysis confirmed that all deposited films were polycrystalline, except for [1/0.75], where there is no CdS formation. Electrical studies indicated that CdS with a molar ratio of [Cd]/[S] of 1 had the maximum carrier concentration (3.21 × 1014 cm−3) and lowest resistivity (1843.9 Ω·cm). Based on the proposed mechanism, three kinds of mechanisms are involved in the formation of CdS layers. Among them, the ion-by-ion mechanism has a significant effect on the formation of CdS films. Besides, modelling studies reveal that the optic-electrical properties of the buffer layer play a crucial role in influencing the performance of a CIGS solar cell.

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Chawla, Parul, Son Singh, and Shailesh Narain Sharma. "An insight into the mechanism of charge-transfer of hybrid polymer:ternary/quaternary chalcopyrite colloidal nanocrystals." Beilstein Journal of Nanotechnology 5 (August 8, 2014): 1235–44. http://dx.doi.org/10.3762/bjnano.5.137.

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In this work, we have demonstrated the structural and optoelectronic properties of the surface of ternary/quaternary (CISe/CIGSe/CZTSe) chalcopyrite nanocrystallites passivated by tri-n-octylphosphine-oxide (TOPO) and tri-n-octylphosphine (TOP) and compared their charge transfer characteristics in the respective polymer: chalcopyrite nanocomposites by dispersing them in poly(3-hexylthiophene) polymer. It has been found that CZTSe nanocrystallites due to their high crystallinity and well-ordered 3-dimensional network in its pristine form exhibit a higher steric- and photo-stability, resistance against coagulation and homogeneity compared to the CISe and CIGSe counterparts. Moreover, CZTSe nanocrystallites display efficient photoluminescence quenching as evident from the high value of the Stern–Volmer quenching constant (K SV) and eventually higher charge transfer efficiency in their respective polymer P3HT:CZTSe composites. We modelled the dependency of the charge transfer from the donor and the charge separation mechanism across the donor–acceptor interface from the extent of crystallinity of the chalcopyrite semiconductors (CISe/CIGSe/CZTSe). Quaternary CZTSe chalcopyrites with their high crystallinity and controlled morphology in conjunction with regioregular P3HT polymer is an attractive candidate for hybrid solar cells applications.

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