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Academic literature on the topic 'CIGSSe'

Author: Grafiati
Published: 10 December 2022
Last updated: 28 January 2023

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Journal articles on the topic "CIGSSe"

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Hassan, Muhammad Aamir, Muhammad Mujahid, and Lydia Helena Wong. "Multi Band Gap Cu(In,Ga)(S,Se)2 Thin Films Deposited by Spray Pyrolysis for High Performance Solar Cell Devices." Materials Science Forum 864 (August 2016): 143–48. http://dx.doi.org/10.4028/www.scientific.net/msf.864.143.

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The performance of copper indium gallium disulfoselenide (CIGSSe) solar cells strongly depends on the band bap of absorbing layer of CIGSSe. The device performance can be improved by fabricating multi band gap layer of CIGSSe. However, the fabrication of multi band gap CIGSSe using non-vacuum techniques is challenging. In this study, we fabricated solar cell devices which consisted of multi band gap Cu (In,Ga)(S,Se)2 thin films. The CIGS thin films were prepared by the spray-pyrolysis of aqueous precursor solutions of gallium (gallium chloride; GaCl3), copper (indium chloride; CuCl2), indium (indium chloride; InCl3), and Sulphur (thiourea; (SC(NH2)2) sources on Mo-coated glass substrate. The as-sprayed thin films were then selenized at 500 °C for 10 minutes.After selenization, CIGS films were transformed to Cu (In,Ga)(S,Se)2 (CIGSSe). The CIGS films with different composition were deposited again on top of selenized CIGSSe films and selenization process was repeated, hence multi band gap CIGSSe films were fabricated. The Chemical bath deposition (CBD) process was used to deposit cadmium sulphide (CdS) buffer layer. The solar cell fabricated with the device configuration of glass/Mo/CIGSSe/CdS/i-ZnO/AZO showed a power conversion efficiency of 6.51%.
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Mitzi, David B., Oki Gunawan, Teodor K. Todorov, and D. Aaron R. Barkhouse. "Prospects and performance limitations for Cu–Zn–Sn–S–Se photovoltaic technology." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 371, no. 1996 (August 13, 2013): 20110432. http://dx.doi.org/10.1098/rsta.2011.0432.

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While cadmium telluride and copper–indium–gallium–sulfide–selenide (CIGSSe) solar cells have either already surpassed (for CdTe) or reached (for CIGSSe) the 1 GW yr −1 production level, highlighting the promise of these rapidly growing thin-film technologies, reliance on the heavy metal cadmium and scarce elements indium and tellurium has prompted concern about scalability towards the terawatt level. Despite recent advances in structurally related copper–zinc–tin–sulfide–selenide (CZTSSe) absorbers, in which indium from CIGSSe is replaced with more plentiful and lower cost zinc and tin, there is still a sizeable performance gap between the kesterite CZTSSe and the more mature CdTe and CIGSSe technologies. This review will discuss recent progress in the CZTSSe field, especially focusing on a direct comparison with analogous higher performing CIGSSe to probe the performance bottlenecks in Earth-abundant kesterite devices. Key limitations in the current generation of CZTSSe devices include a shortfall in open circuit voltage relative to the absorber band gap and secondarily a high series resistance, which contributes to a lower device fill factor. Understanding and addressing these performance issues should yield closer performance parity between CZTSSe and CdTe/CIGSSe absorbers and hopefully facilitate a successful launch of commercialization for the kesterite-based technology.
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Marlein, J., K. Decock, and M. Burgelman. "Analysis of electrical properties of CIGSSe and Cd-free buffer CIGSSe solar cells." Thin Solid Films 517, no. 7 (February 2009): 2353–56. http://dx.doi.org/10.1016/j.tsf.2008.11.048.

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Buffiere, Marie, Abdel Aziz El Mel, Nick Lenaers, Guy Brammertz, Armin E. Zaghi, Marc Meuris, and Jef Poortmans. "Surface Cleaning and Passivation of Chalcogenide Thin Films Using S(NH4)2 Chemical Treatment." Solid State Phenomena 219 (September 2014): 320–23. http://dx.doi.org/10.4028/www.scientific.net/ssp.219.320.

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Chalcopyrite ternary and kesterite quaternary thin films, such as Cu (In,Ga)(S,Se)2and Cu2ZnSn (S,Se)4generically referred to as CIGSSe and CZTSSe, respectively, have become the subject of considerable interest and study for semiconductor devices in recent years [1,2]. These materials are of particular interest for use as an absorber layer in photovoltaic devices. In thin film solar cells, the p-type CIGSSe or CZTSSe layer is combined with an n-type semiconductor thin film such as CdS buffer layer to form the p-n heterojunction of the device. The synthesis process of the CIGSSe or CZTSSe absorber layer requires temperatures ranging between 400 and 600 °C to form the photoactive chalcopyrite or kesterite phases [3,4]. During the synthesis process, the formation of trace amounts of binary/ternary compositions (i.e., undesirable secondary or impurity phases consisting of selenides, oxides, carbonates, etc.) may occur. These trace amounts of impurity phases may form at the nascent absorber surfaces, which could negatively affects the photovoltaic conversion efficiencies of solar cells [5-7]. Therefore, prior to the deposition of the CdS buffer layer, there is a need to clean the CIGSSe or CZTSSe surfaces to remove any possible traces of such impurities.
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Gour, Kuldeep S., Rahul Parmar, Rahul Kumar, and Vidya N. Singh. "Cd-Free Zn(O,S) as Alternative Buffer Layer for Chalcogenide and Kesterite Based Thin Films Solar Cells: A Review." Journal of Nanoscience and Nanotechnology 20, no. 6 (June 1, 2020): 3622–35. http://dx.doi.org/10.1166/jnn.2020.17537.

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Cd is categorized as a toxic material with restricted use in electronics as there are inherent problems of treating waste and convincing consumers that it is properly sealed inside without any threat of precarious leaks. Apart from toxicity, band-gap of CdS is about 2.40–2.50 eV, which results significant photon loss in short-wavelength range which restricts the overall performance of solar cells. Thin film of Zn(O,S) is a favorable contender to substitute CdS thin film as buffer layer for CuInGaSe2 (CIGS), CuInGa(S,Se)2 (CIGSSe), Cu2ZnSn(S,Se)4 (CZTSSe) Cu2ZnSnSe4 (CZTSe), Cu2ZnSnS4 (CZTS) thin film absorber material based photovoltaic due to it made from earth abundant, low cost, non-toxic materials and its ability to improve the efficiency of chalcogenide and kesterite based photovoltaic due to wider band-gap which results in reduction of absorption loss compared to CdS. In this review, apart from mentioning various deposition technique for Zn(O,S) thin films, changes in various properties i.e., optical, morphological, and opto-electrical properties of Zn(O,S) thin film deposited using various methods utilized for fabricating solar cell based on CIGS, CIGSSe, CZTS, CZTSe and CZTSSe thin films, the material has been evaluated for all the properties of buffer layer (high transparency for incident light, good conduction band lineup with absorber material, low interface recombination, high resistivity and good device stability).
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Aswad, Ammar J., Nadeem K. Hassan, and Adnan R. Ahmed. "Simulation and Numerical Modelling of CIGSSe-Based Solar Cells by AFORS-HET." Journal of Physics: Conference Series 2114, no. 1 (December 1, 2021): 012075. http://dx.doi.org/10.1088/1742-6596/2114/1/012075.

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Abstract A general equation to determine properties of penternary solar cell based on Cu (In, Ga) (Se, S) 2 (CIGSSe) with a double buffer layer ZnS/Zn0.8Mg0.2O(ZMO) were derived. Numerical analysis of a (CIGSSe) solar cell with a double buffer layer ZnS/ZMO, CdS free absorber layer, were investigated using the AFORS-HET software simulation. Taking into consideration the effect of thickness and doping concentration for the CIGSSe absorption layer, ZnS buffer layer and ZnO:B(BZO) window layer on the electron transport, short circuit current density (Jsc) and open circuit voltage (Voc); numerical simulation demonstrated that the changes in band structure characteristics occurred. The solar energy conversion efficiency is 28.34%, the filling factor is 85.59%, the open circuit voltage is 782.3 mV, the short circuit current is 42.32 mA. then we take the range of the gradient between the ratio of x and y for the absorption layer, and the best result of Voc, Jsc, FF, Eff equal (838.7 mV, 40.94 mA/cm2, 86.23%, 29.61%) respectively at x= 0, y= 0.26.
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Cho, Yunae, Na Kyoung Youn, Soomin Song, Jiseon Hwang, Tanka Raj Rana, Ara Cho, Seung Kyu Ahn, et al. "A novel two-stage hybrid processing technique towards industrial manufacturing of the Cu(In,Ga)(S,Se)2 solar cell with materially efficient fabrication." Journal of Materials Chemistry A 7, no. 19 (2019): 11651–58. http://dx.doi.org/10.1039/c9ta02954k.

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Tomizawa, Takeshi, Reo Usui, Takeshi Okato, and Hidefumi Odaka. "Development of Selenization/Sulfurization Process for High Quality Cu(In, Ga)(S, Se)2 Solar Cells on High Strain Point Glass Substrates." MRS Proceedings 1493 (2013): 225–29. http://dx.doi.org/10.1557/opl.2013.408.

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ABSTRACTThis study provides a recipe of a 2-step selenization and sulfurization method for high strain point (HSP) glass to improve the quality of Cu(In, Ga)(S, Se)2 (CIGSSe). The recipe is distinguished by slow selenization growth before sulfurization growth at the high temperature of 580 °C. We used proto-type HSP glass instead of standard soda lime glass (SLG) to tolerate this higher temperature process. The provided slow selenization recipe improved an averaged relative efficiency by 14 percent compared to a rapid selenization recipe. We confirmed the improvement of the quality of CIGSSe which was characterized by the high crystal quality, the smooth surface, the uniform depletion layer and reduced defects as measured by XRD, SEM, EBIC and Admittance spectroscopy.
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Flammini, Marco Giacomo, Nicola Debernardi, Maxime Le Ster, Brendan Dunne, Johan Bosman, and Mirjam Theelen. "The Influence of Heating Time and Temperature on the Properties of CIGSSe Solar Cells." International Journal of Photoenergy 2016 (2016): 1–7. http://dx.doi.org/10.1155/2016/4089369.

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Nonencapsulated CIGSSe solar cells, with a silver grid, were exposed to different temperatures for various periods in order to measure the effect of the heat exposure in CIGSSe modules. The heat treatment time and temperature were varied during the experiments, which were executed at atmospheric conditions. In all the cases, after reaching a temperature of about 300°C, theIVmeasurement showed a reduction of 2-3% in terms ofVOCandJSC. This is confirmed, respectively, by Raman and EQE measurements as well. The efficiency drop was −7%, −29%, and −48%, respectively, for 30 seconds, 300 seconds, and 600 seconds of exposure time. With temperatures larger than 225°C, the series resistance starts to increase exponentially and a secondary barrier becomes visible in theIVcurve. This barrier prevents the extraction of electrons and consequently reducing the solar cells efficiency. Lock-in thermography demonstrated the formation of shunts on the mechanical scribes only for 300 and 600 seconds exposure times. The shunt resistance reduction is in the range of 5% for all time periods.
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Tong, Hao, Ziming Kou, Ming Zhao, Daming Zhuang, Chen Wang, and Yuxian Li. "Influences of Mg concentration in ZnMgO film on energy band alignment at CIGSSe/Zn1-xMgxO interface and performances of CIGSSe solar cells." Solar Energy 246 (November 2022): 216–23. http://dx.doi.org/10.1016/j.solener.2022.09.039.

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Dissertations / Theses on the topic "CIGSSe"

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Künecke, Ulrike [Verfasser], and Peter [Akademischer Betreuer] Wellmann. "Charakterisierung von Inhomogenitäten an CIGSSe-Solarzellenabsorbern im Rasterelektronenmikroskop / Ulrike Künecke. Gutachter: Peter Wellmann." Erlangen : Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), 2014. http://d-nb.info/1065269943/34.

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Keller, Jan [Verfasser], and Jürgen [Akademischer Betreuer] Parisi. "Charakterisierung und Simulation von sequentiell prozessierten CIGSSe-Solarzellen mit chemisch gradierter Absorberschicht : Möglichkeiten und Einschränkungen eines eindimensionalen Ansatzes / Jan Keller. Betreuer: Jürgen Parisi." Oldenburg : IBIT - Universitätsbibliothek, 2012. http://d-nb.info/1026283833/34.

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Pohlner, Stephan [Verfasser], Carsten [Gutachter] Ronning, Gerhard [Gutachter] Franz, and Friedrich [Gutachter] Reinert. "Impact of indium sulphide based buffer layers on the electrical properties of CIGSSe thin film solar cells / Stephan Pohlner ; Gutachter: Carsten Ronning, Gerhard Franz, Friedrich Reinert." Jena : Friedrich-Schiller-Universität Jena, 2017. http://d-nb.info/1177599791/34.

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Saeed, Mahfouz Ali. "ELECTROCHEMICAL FABRICATION OF THIN FILM PHOTOVOLTAIC DEVICES (CIGS & CIGSS)." Case Western Reserve University School of Graduate Studies / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=case1396265882.

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Kadam, Ankur. "PREPARATION OF EFFICIENT CUIN1-XGAXSE2-YSY/CDS THIN-FILM SOLAR CELLS BY OPTIMIZING THE MOLYBDENUM BACK CONTACT AND USING DIETHYL." Doctoral diss., University of Central Florida, 2006. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4230.

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High efficiency CuIn1-xGaxSe2-ySy (CIGSS)/CdS thin-film solar cells were prepared by optimizing the Mo back contact layer and optimizing the parameters for preparing CIGSS absorber layer using diethylselenide as selenium source. The Mo film was sputter deposited on 2.5 cm x 10 cm soda-lime glass using DC magnetron sputtering for studying the adhesion and chemical reactivity with selenium and sulfur containing gas at maximum film growth temperature. Mo being a refractory material develops stresses, nature of which depends on the deposition power and argon pressure. It was found that the deposition sequence with two tensile stressed layers deposited at 200W and 5 x 10-3 Torr argon pressure when sandwiched between three compressively stressed layers deposited at 300 W power and 0.3 x 10-3 Torr argon pressure had the best adhesion, limited reactivity and compact nature. An organo-metallic compound, diethylselenide (DESe) was developed as selenium precursor to prepare CIGSS absorber layers. Metallic precursors Cu-In-Ga layers were annealing in the conventional furnace in the temperature range of 475oC to 515 oC and in the presence of a dilute DESe atmosphere. The films were grown in an indium rich regime. Systematic approaches lead to the optimization of each step involved in the preparation of the absorber layer. Initial experiments were focused on obtaining the range of maximum temperatures required for the growth of the film. The following experiments included optimization of soaking time at maximum temperature, quantity of metallic precursor, and amount of sodium in terms of NaF layer thickness required for selenization. The absorber surface was coated with a 50 to 60 nm thick layer of CdS as hetero-junction partner by chemical bath deposition. A window bi-layer of i:ZnO/ZnO:Al was deposited by RF magnetron sputtering. The thickness of i:ZnO was increased to reduce the shunt resistance to improve open circuit voltage. The cells were completed by depositing a Cr/Ag front contact by thermal evaporation. Efficiencies greater than 13% was achieved on glass substrates. The performance of the cells was co-related with the material properties.
Ph.D.
Department of Mechanical, Materials and Aerospace Engineering;
Engineering and Computer Science
Materials Science and Engineering
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Kulkarni, Sachin. "EFFECT OF COMPOSITION, MORPHOLOGY AND SEMICONDUCTING PROPERTIES ON THE EFFICIENCY OF CUIN1-XGAXSE2-YSY THIN-FILM SOLAR CELLS PRE." Doctoral diss., University of Central Florida, 2008. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/2938.

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A rapid thermal processing (RTP) reactor for the preparation of graded CuIn1-xGaxSe2-ySy (CIGSeS) thin-film solar cells has been designed, assembled and is being used at the Photovoltaic Materials Laboratory of the Florida Solar Energy Center. CIGSeS films having the optimum composition, morphology, and semiconducting properties were prepared using RTP. Initially films having various Cu/(In+Ga) ratios were prepared. In the next step selenium incorporation in these films was optimized, followed by sulfur incorporation in the surface to increase the bandgap at the surface. The compositional gradient of sulfur was fine-tuned so as to increase the conversion efficiency. Materials properties of these films were characterized by optical microscopy, SEM, AFM, EDS, XRD, GIXRD, AES, and EPMA. The completed cells were extensively studied by electrical characterization. Current-voltage (I-V), external and internal quantum efficiency (EQE and IQE), capacitance-voltage (C-V), and light beam induced current (LBIC) analysis were carried out. Current Density (J)-Voltage (V) curves were obtained at different temperatures. The temperature dependence of the open circuit voltage and fill factor has been estimated. The bandgap value calculated from the intercept of the linear extrapolation was ~1.1-1.2 eV. Capacitance-voltage analysis gave a carrier density of ~4.0 x 1015 cm-3. Semiconductor properties analysis of CuIn1-xGaxSe2-ySy (CIGSeS) thin-film solar cells has been carried out. The values of various PV parameters determined using this analysis were as follows: shunt resistance (Rp) of ~510 Ohms-cm2 under illumination and ~1300 Ohms-cm2 in dark, series resistance (Rs) of ~0.8 Ohms-cm2 under illumination and ~1.7 Ohms-cm2 in dark, diode quality factor (A) of 1.87, and reverse saturation current density (Jo) of 1.5 x 10-7A cm-2. The efficiency of 12.78% obtained during this research is the highest efficiency obtained by any University or National Lab for copper chalcopyrite solar cells prepared by RTP. CIGS2 cells have a better match to the solar spectrum due to their comparatively higher band-gap as compared to CIGS cells. However, they are presently limited to efficiencies below 13% which is considerably lower than that of CIGS cells of 19.9%. One of the reasons for this lower efficiency is the conduction band offset between the CIGS2 absorber layer and the CdS heterojunction partner layer. The band offset value between CIGS2 and CdS was estimated by a combination of ultraviolet photoelectron spectroscopy (UPS) and Inverse Photoemission Spectroscopy (IPES) to be -0.45 eV, i.e. a cliff is present between these two layers, enhancing the recombination at the junction, this limits the efficiency of CIGS2 wide-gap chalcopyrite solar cells.
Ph.D.
Department of Mechanical, Materials and Aerospace Engineering
Engineering and Computer Science
Materials Science & Engr PhD
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Kaul, Ashwani. "Optimization of Process Parameters for Faster Deposition of CuIn1-xGaxS2 and CuIn1-xGaxSe2-ySy Thin Film Solar Cells." Doctoral diss., University of Central Florida, 2012. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5336.

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Thin film solar cells have the potential to be an important contributor to the world energy demand in the 21st century. Among all the thin film technologies, CuInGaSe2 (CIGS) thin film solar cells have achieved the highest efficiency. However, the high price of photovoltaic (PV) modules has been a major factor impeding their growth for terrestrial applications. Reduction in cost of PV modules can be realized by several ways including choosing scalable processes amenable to large area deposition, reduction in the materials consumption of active layers, and attaining faster deposition rates suitable for in-line processing. Selenization-sulfurization of sputtered metallic Cu-In-Ga precursors is known to be more amenable to large area deposition. Sputter-deposited molybdenum thin film is commonly employed as a back contact layer for CIGS solar cells. However, there are several difficulties in fabricating an optimum back contact layer. It is known that molybdenum thin films deposited at higher sputtering power and lower gas pressure exhibit better electrical conductivity. However, such films exhibit poor adhesion to the soda-lime glass substrate. On the other hand, films deposited at lower discharge power and higher pressure although exhibit excellent adhesion show lower electrical conductivity. Therefore, a multilayer structure is normally used so as to get best from the two deposition regimes. A multi-pass processing is not desirable in high volume production because it prolongs total production time and correspondingly increases the manufacturing cost. In order to make manufacturing compliant with an in-line deposition, it is justifiable having fewer deposition sequences. Thorough analysis of pressure and power relationship of film properties deposited at various parameters has been carried out. It has been shown that it is possible to achieve a molybdenum back contact of desired properties in a single deposition pass by choosing the optimum deposition parameters. It is also shown that the film deposited in a single pass is actually a composite structure. CIGS solar cells have successfully been completed on the developed single layer back contact with National Renewable Energy Laboratory (NREL) certified device efficiencies >11%. The optimization of parameters has been carried out in such a way that the deposition of back contact and metallic precursors can be carried out in identical pressure conditions which is essential for in-line deposition without a need for load-lock. It is know that the presence of sodium plays a very critical role during the growth of CIGS absorber layer and is beneficial for the optimum device performance. The effect of sodium location during the growth of the absorber layer has been studied so as to optimize its quantity and location in order to get devices with improved performance. NREL certified devices with efficiencies >12% have been successfully completed.
Ph.D.
Doctorate
Materials Science Engineering
Engineering and Computer Science
Materials Science and Engineering
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Kumar, Bhaskar. "ZINC CADMIUM SULPHIDE AND ZINC SULPHIDE AS ALTERNATIVE HETEROJUNCTION PARTNERS FOR CIGS2 SOLAR CELLS." Master's thesis, University of Central Florida, 2007. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4052.

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Devices with ZnCdS/ZnS heterojunction partner layer have shown better blue photon response due to higher band gap of these compounds as compared to devices with CdS heterojunction partner layer. CdS heterojunction partner layer has shown high photovoltaic conversion efficiencies with CIGS absorber layer while efficiencies are lower with CuIn1-xGaxS2 (CIGS2). A negative conduction band offset has been observed for CdS/CIGS2 as compared to near flat conduction band alignment in case of CdS/CIGS devices, which results in higher interface dominated recombination. Moreover, it has been predicted that optimum band offsets for higher efficiency solar cells may be achieved for cells with alternative heterojunction partner such as ZnS. With varying ratio of Zn/ (Zn+Cd) in ZnxCd1-xS a range of bandgap energies can be obtained and thus an optimum band offset can be engineered. For reducing interface dominated recombination better lattice match between absorber and heterojunction partners is desirable. Although CdS has better lattice match with CuIn1-xGaxS2 absorber layer, same is not true for CuIn1-xGaxS2 absorber layers. Utilizing ZnxCd1-xS as heterojunction partner provides a range of lattice constant (between aZnS= ~5.4 Ǻ and aCdS= ~5.7 Ǻ) depending on Zn/(Zn+Cd). Therefore better lattice match can be obtained between heterojunction partner and absorber layer. Better lattice match will lead to lower interface dominated recombination, hence higher open circuit voltages. In the present study chemical bath deposition parameters are near optimized for high efficiency CIGS2 Solar cells. Effect of various chemical bath deposition parameters on device performance was studied and attempts were made to optimize the deposition parameters in order to improve the device performance.In/(In+Ga) ratio in absorber layer is varied to obtain good lattice match and optimum band alignment. Solar cells with conversion efficiencies comparable to conventional CdS/CIGS2 has been obtained with ZnxCd1-xS /CIGS2. High short current as well as higher open circuit voltages were obtained with ZnxCd1-xS as alternative heterojunction partner for CIGS2 solar cells as compared to SLG/Mo/CIGS2/ CdS / i-ZnO/ZnO:Al.
M.S.M.S.E.
Department of Mechanical, Materials and Aerospace Engineering;
Engineering and Computer Science
Materials Science & Engr MSMSE
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Pethe, Shirish A. "Optimization of process parameters for reduced thickness CIGSeS thin film solar cells." Doctoral diss., University of Central Florida, 2010. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4623.

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With the advent of the 21st century, one of the serious problems facing mankind is harmful effects of global warming. Add to that the ever increasing cost of fuel and the importance of development of clean energy resources as alternative to fossil fuel has becomes one of the prime and pressing challenges for modern science and technology in the 21st century. Recent studies have shown that energy related sources account for 50% of the total emission of carbon dioxide in the atmosphere. All research activities are focused on developing various technologies that are capable of converting sunlight into electricity with high efficiency and can be produced using a cost-effective process. One of such technologies is the CuIn[sub1-x]Ga[subx]Se[sub2] (CIGS) and its alloys that can be produced using cost-effective techniques and also exhibit high photo-conversion efficiency. The work presented here discusses some of the fundamental issues related to high volume production of CIGS thin film solar cells. Three principal issues that have been addressed in this work are effect of reduction in absorber thickness on device performance, micrononuniformity involved with amount of sodium and its effect on device performance and lastly the effect of working distance on the properties of molybdenum back contact. An effort has been made to understand the effect of absorber thickness on PV parameters and optimize the process parameters accordingly. Very thin (<1 [micro]m) absorber film were prepared by selenization using metallorganic selenium source in a conventional furnace and by RTP using Se vapor. Sulfurization was carried out using H2S gas. Devices with efficiencies reaching 9% were prepared for very thin (<1 [micro]m) CIGS and CIGSeS thin films. It was shown through this work that the absorber thickness reduction of 64% results in the efficiency drop of only 32%. With further optimization of the reaction process of the absorber layer as well as the other layers higher efficiencies can be achieved. The effect of sodium on the device performance is experimentally verified in this work. To the best of our knowledge the detrimental effect of excess sodium has been verified by experimental data and effort has been made to correlate the variation in PV parameter to theoretical models of effect of sodium. It has been a regular practice to deposit thin barrier layer prior to molybdenum deposition to reduce the micrononuniformities caused due to nonuniform out diffusion of sodium from the soda lime glass. However, it was proven in this work that an optimally thick barrier layer is necessary to reduce the out diffusion of sodium to negligible quantities and thus reduce the micrononuniformities. Molybdenum back contact deposition is a bottleneck in high volume manufacturing due to the current state of art where multi layer molybdenum film needs to be deposited to achieve the required properties. In order to understand and solve this problem experiments were carried out. The effect of working distance (distance between the target and the substrate) on film properties was studied and is presented in this work. During the course of this work efforts were taken to carry out a systematic and detailed study of some of the fundamental issues related to CIGS technology and particular for high volume manufacturing of CIGS PV modules and lay a good foundation for further improvement of PV performance of CIGS thin film solar cells prepared by the two step process of selenization and sulfurization of sputtered metallic precursors.
ID: 030423396; System requirements: World Wide Web browser and PDF reader.; Mode of access: World Wide Web.; Thesis (Ph.D.)--University of Central Florida, 2010.; Includes bibliographical references (p. 108-116).
Ph.D.
Doctorate
Department of Electrical Engineering and Computer Science
Engineering and Computer Science
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10

Jehl, Zacharie. "Realization of ultrathin Copper Indium Gallium Di-selenide (CIGSe) solar cells." Thesis, Paris 11, 2012. http://www.theses.fr/2012PA112058/document.

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Nous étudions la possibilité de réaliser des cellules à base de diséléniure de cuivre, indium et gallium (CIGSe) à absorbeur ultra-mince, en réduisant l’épaisseur de la couche de CIGSe de 2500 nm jusqu’à 100 nm, tout en conservant un haut rendement de conversion.Grâce à l’utilisation d’outils de simulation numérique, nous étudions l’influence de la réduction d’épaisseur de l’absorbeur sur les paramètres photovoltaïques de la cellule. Une importante dégradation du rendement est observée, principalement attribuée à une réduction de la fraction de lumière absorbée par le CIGSe ainsi qu’à une collecte des porteurs de charge réduite dans les dispositifs ultraminces. Des solutions permettant de surmonter ces problèmes sont proposées et leur influence potentielle est numériquement simulée ; nous démontrons qu’une ingénierie de face avant (couche tampon alternative, couche anti-réfléchissante…) et de face arrière (contact arrière réfléchissant, diffusion de la lumière) sur une cellule CIGSe à absorbeur ultramince permet de potentiellement améliorer le rendement de la cellule solaire au niveau de celui d’une cellule à absorbeur référence (2.5 μm).Grâce à l’utilisation de techniques de gravure chimique sur des échantillons standards de CIGSe épais, nous réalisons des cellules solaires avec différentes épaisseurs d’absorbeurs, et nous étudions l’influence de l’épaisseur du CIGSe sur les paramètres photovoltaïques des cellules. Le comportement similaire aux simulations numériques.Une ingénierie du contact avant sur des cellules CIGSe à différentes épaisseurs est réalisée pour spécifiquement améliorer l’absorption dans la couche de CIGSe. Nous étudions l’influence d’une couche tampon alternative de ZnS, de la texturation de la fenêtre avant de ZnO:Al, et d’une couche anti-reflet sur la cellule solaire. D’importantes améliorations sont observées quelque soit l’épaisseur de la couche de CIGSe, ce qui permet d’obtenir des rendements de conversions supérieurs à ceux obtenus dans la configuration standard des dispositifs.Une ingénierie du contact arrière à basse température est également réalisée avec l’utilisation d’un procédé novateur combinant la gravure chimique du CIGSe avec un « lift-off » mécanique de la couche de CIGSe afin de la séparer du substrat de Molybdène. De nouveaux matériaux fortement réflecteur de lumière et précédemment incompatible avec le procédé de croissance du CIGSe sont utilisés comme contact arrière pour des cellules CIGSe ultra-minces. Une étude comparative en fonction de l’épaisseur de CIGSe entre des cellules avec contact arrière réfléchissant en Or (Au) et cellules solaires avec contact arrière standard Mo est effectuée. Le contact Au permet d’augmenter significativement le rendement de conversion des cellules solaires à absorbeur sub-microniques comparé au contact standard Mo avec un rendement de conversion supérieur à 10% obtenu sur une cellule CIGSe de 400 nm (comparé à 7.9% avec Mo).Afin de réduire encore plus l’épaisseur de la couche de CIGSe, jusque 100-200 nm, les modèles numériques montrent qu’il est nécessaire d’utiliser un réflecteur lambertien sur la face arrière de la cellule afin de maximiser l’absorption de la lumière. Un dispositif preuve de concept expérimental est réalisé avec une épaisseur de CIGSe de 200 nm et un réflecteur arrière lambertien, et ce dispositif est caractérisé par spectroscopie de transmission/réflexion. La réponse spectrale est déterminée en combinant des valeurs issues de simulation numérique et la mesure expérimental de l’absorption du dispositif. Nous calculons un courant de court circuit de 26 mA.cm-2 pour ce dispositif avec réflecteur lambertien, bien supérieur à ce qui est calculé pour la même structure sans réflecteur (15 mA.cm-2), et comparable au courant mesuré sur une cellule de référence de 2500 nm (28 mA.cm-2). L’utilisation de réflecteur lambertien pour des cellules CIGSe ultraminces est donc particulièrement adaptée pour maintenir de hauts rendements
In this thesis, we investigate on the possibility to realize ultrathin absorber Copper Indium Gallium Di-Selenide (CIGSe) solar cells, by reducing the CIGSe thickness from 2500 nm down to 100 nm, while conserving a high conversion efficiency.Using numerical modeling, we first study the evolution of the photovoltaic parameters when reducing the absorber thickness. A strong decrease of the efficiency of the solar cell is observed, mainly related to a reduced light absorption and carrier collection for thin and ultrathin CIGSe solar cells. Solutions to overcome these problems are proposed and the potential improvements are modeled; we show that front side (buffer layer, antireflection coating) and back side (reflective back contact, light scattering) engineering of an ultrathin device can potentially increase the conversion efficiency up to the level of a standard thick CIGSe solar cell.By using chemical bromine etching on a standard thick CIGSe layer, we realize solar cells with different absorber thicknesses and experimentally study the influence of the absorber thickness on the photovoltaic parameters of the devices. Experiments show a similar trends to that observed in numerical modeling.Front contact engineering on thin CIGSe solar cell is realized to increase the specific absorption in CIGSe, including alternative ZnS buffer, front ZnO:Al window texturation and anti-reflection coating. Substantial improvements are observed whatever the CIGSe thickness, with efficiencies higher that the default configuration.A back contact engineering at low temperature is realized by using an innovative approach combining chemical etching of the CIGSe and mechanical lift-off of the CIGSe from the original Molybdenum (Mo) substrate. New highly reflective materials previously incompatible with the standard solar cell process are used as back contact for thin and ultrathin CIGSe solar cells, and a comparative study between standard Mo back contact and alternative reflective Au back contact solar cells is performed. The Au back reflector significantly enhance the efficiency of solar cell with sub-micrometer absorbers compared to the standard Mo back reflector; an efficiency higher than 10 % on a 400 nm CIGSe is obtained with Au back contact (7.9% with standard Mo back contact). For further reduction of the absorber thickness down to 100-200 nm, numerical modeling show that a lambertian back reflector is needed to fully absorb the incident light in the CIGSe. An experimental proof of concept device with a CIGSe thickness of 200 nm and a lambertian back reflector is realized and characterized by reflection/transmission spectroscopy, and the experimental spectral response is determined by combining simulation and experimentally measured absorption. A short circuit current of 26 mA.cm-2 is determined with the lambertian back reflector, which is much higher than what is obtained for the same device with no reflector (15 mA.cm-2), and comparable to the short circuit current measured on a reference 2500 nm thick CIGSe solar cell (28 mA.cm-2). Lambertian back reflectors are therefore found to be the most effective way to enhance the efficiency of an ultrathin CIGSe solar cell up to the level of a reference thick CIGSe solar cell
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Books on the topic "CIGSSe"

1

1959-, Favreau Marie-Claude, ed. Cricri Cigale. Saint-Lambert, Québec: Dominique et compagnie, 2010.

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Pascale la cigale. [Paris]: Gallimard Jeunesse-Guiboulees, 2001.

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Kessel, David. Baiser de feu: Le cigare. Paris: Leprince, 2010.

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Vaxelaire, Daniel. Les naufragés de la "Cigale". [Paris]: Flammarion, 2001.

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Mišvelaże, Revaz. Minacerebi satelepʻono cignze: Cerilebi, dialogebi. Tʻbilisi: Tʻbilisis universitetis gamomcʻemloba, 1996.

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Xhai, Spiro. Pesë letra ; Dashuri cigane: Novela. [Tiranë]: Ombra GVG, 2010.

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Rey, Jean-Claude. Le livre de la cigale. Marseille: Editions Autres Temps, 1995.

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Eric, Rambeau, and Blot Anne, eds. Le cigare: Guide de l'amateur. Courbevoie: Éd. Soline, 1995.

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Guilbaud, Luce. Une cigale dans la tête. Chaillé-sous-les-Ormeaux: Le Dé bleu, 1998.

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Roy, Bernard Le. La grande histoire du cigare. [Paris]: Flammarion, 1998.

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Book chapters on the topic "CIGSSe"

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Corradi, R. L. M., J. Boulesteix, A. Bosma, M. Capaccioli, P. Amram, and M. Marcelin. "Cigale Observations of NGC 3198." In Morphological and Physical Classification of Galaxies, 445–46. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2522-2_62.

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Long, Willis, and Stig L. Nilsson. "Introduction to Flexible AC Transmission Systems (FACTS) Controllers: A Chronology." In CIGRE Green Books, 3–12. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-35386-5_1.

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Adapa, Ram, Stig L. Nilsson, Bjarne R. Andersen, and Yi Yang. "Technical Description of the Unified Power Flow Controller (UPFC) and Its Potential Variations." In CIGRE Green Books, 299–351. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-35386-5_10.

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Rao, Hong, Shi He, Xiaodan Wu, Marcio M. de Oliveira, Guillaume de Préville, Colin Davidson, Zhanfeng Deng, et al. "Application Examples of SVC." In CIGRE Green Books, 423–509. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-35386-5_12.

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Xu, Shukai, Shaobo Wang, Guangjie Zuo, Colin Davidson, Marcio M. de Oliveira, Rizah Memisevic, Georg Pilz, Bilgehan Donmez, and Bjarne R. Andersen. "Application Examples of STATCOM." In CIGRE Green Books, 511–84. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-35386-5_13.

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Nilsson, Stig L., Shukai Xu, Bo Lei, Zhanfeng Deng, and Bjarne R. Andersen. "Application Examples of UPFC and Its Variants." In CIGRE Green Books, 645–706. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-35386-5_15.

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Duarte, Mário. "Economic Appraisal and Cost-Benefit Analysis." In CIGRE Green Books, 709–51. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-35386-5_16.

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Andersen, Bjarne R., Dennis Woodford, and Geoff Love. "FACTS Planning Studies." In CIGRE Green Books, 753–85. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-35386-5_17.

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Andersen, Bjarne R., Bruno Bisewski, Narinder Dhaliwal, and Mark Reynolds. "Environmental Considerations for FACTS Projects." In CIGRE Green Books, 787–846. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-35386-5_18.

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Mehraban, Ben, Hubert Bilodeau, Bruno Bisewski, and Thomas Magg. "Procurement and Functional Specifications for FACTS Controllers." In CIGRE Green Books, 847–77. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-35386-5_19.

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Conference papers on the topic "CIGSSe"

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Caruso, M., R. Miceli, S. Guarino, F. Ricco Galluzzo, M. Roscia, and F. Viola. "Electrical characterization of CIGSSe photovoltaic modules." In 2017 6th International Conference on Clean Electrical Power (ICCEP). IEEE, 2017. http://dx.doi.org/10.1109/iccep.2017.8004788.

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Flammini, Marco Giacomo, Nicola Debernardi, Maxime Le Ster, Klaas Bakker, Brendan Dunne, Johan Bosman, and Mirjam Theelen. "How heat influences CIGSSe solar cells properties." In SPIE Optics + Photonics for Sustainable Energy, edited by Neelkanth G. Dhere, John H. Wohlgemuth, and Keiichiro Sakurai. SPIE, 2016. http://dx.doi.org/10.1117/12.2240266.

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Busacca, A., F. Cardona, M. Caruso, M. Cellura, A. Cino, R. Miceli, A. Parisi, R. Pernice, F. Ricco Galluzzo, and F. Viola. "Electrical characterization of low power CIGSSe photovoltaic modules." In 2015 4th International Conference on Renewable Energy Research and Applications (ICRERA). IEEE, 2015. http://dx.doi.org/10.1109/icrera.2015.7418676.

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Ellis, Ryan G., Essam H. AlRuqobah, Jonathan W. Turnley, and Rakesh Agrawal. "Improving Solution Processed CIGSSe Devices Through Colloidal Nanoparticle Ligand Exchange." In 2020 IEEE 47th Photovoltaic Specialists Conference (PVSC). IEEE, 2020. http://dx.doi.org/10.1109/pvsc45281.2020.9300557.

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Heise, Gerhard, Christian Hellwig, Thomas Kuznicki, Sebastian Sarrach, Christian Menhard, Andreas Heiss, Helmut Vogt, Joerg Palm, and Heinz P. Huber. "Monolithic interconnection of CIGSSe solar cells by picosecond laser structuring." In SPIE LASE, edited by Wilhelm Pfleging, Yongfeng Lu, Kunihiko Washio, Jun Amako, and Willem Hoving. SPIE, 2010. http://dx.doi.org/10.1117/12.851907.

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Dalibor, Thomas, Patrick Eraerds, Matthias Grave, Michael Algasinger, Sven Visbeck, Thomas Niesen, and Jorg Palm. "Advanced PVD buffers on the road to GW-scale CIGSSe production." In 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). IEEE, 2016. http://dx.doi.org/10.1109/pvsc.2016.7749853.

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Priya, Alisha, Prashant Kumar, and Shiva Nand Singh. "Effects of buffer and BSF contact layer on ZnMnO/CIGSSe heterojunction solar cell." In 2020 5th International Conference on Computing, Communication and Security (ICCCS). IEEE, 2020. http://dx.doi.org/10.1109/icccs49678.2020.9276850.

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Hages, Charles J., Nathaniel J. Carter, James Moore, Steven M. McLeod, Caleb K. Miskin, Chinmay Joglekar, Mark S. Lundstrom, and Rakesh Agrawal. "Device comparison of champion nanocrystal-ink based CZTSSe and CIGSSe solar cells: Capacitance spectroscopy." In 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). IEEE, 2013. http://dx.doi.org/10.1109/pvsc.2013.6744856.

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Sun, Xingshu, Charles J. Hages, Nathaniel J. Carter, James E. Moore, Rakesh Agrawal, and Mark Lundstrom. "Characterization of nanocrystal-ink based CZTSSe and CIGSSe solar cells using voltage-dependent admittance spectroscopy." In 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6925415.

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Duarte, Tulio, Suellen A. C. Costa, Antonia Sonia A. C. Diniz, Daniel Braga, Vinicius Camatta, and Lawrence L. Kazmerski. "Module Soiling Spectral and Temperature Effect Comparisons: Focus on CIGSSe, a-SiH, and c-Si." In 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC). IEEE, 2021. http://dx.doi.org/10.1109/pvsc43889.2021.9518417.

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Reports on the topic "CIGSSe"

1

Dhere, N. G. CIGSS Thin Film Solar Cells: Final Subcontract Report, 10 October 2001-30 June 2005. Office of Scientific and Technical Information (OSTI), February 2006. http://dx.doi.org/10.2172/876707.

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Dhere, N. G. High Throughput, Low Toxic Processing of Very Thin, High Efficiency CIGSS Solar Cells: Final Report, December 2008. Office of Scientific and Technical Information (OSTI), April 2009. http://dx.doi.org/10.2172/951811.

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von Roedern, Bolko. National solar technology roadmap: CIGS PV. Office of Scientific and Technical Information (OSTI), June 2007. http://dx.doi.org/10.2172/1217217.

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Mansfield, Lorelle M. Manufacturing and Reliability Science for CIGS Photovoltaics. Office of Scientific and Technical Information (OSTI), January 2019. http://dx.doi.org/10.2172/1490746.

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Mansfield, Lorelle. Advanced Thin Film Core Technology: CIGS Final Technical Report (FTR). Office of Scientific and Technical Information (OSTI), June 2022. http://dx.doi.org/10.2172/1874254.

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Delahoy, A. E., and L. Chen. Advanced CIGS Photovoltaic Technology: Annual Technical Report, 15 November 2001-14 November 2002. Office of Scientific and Technical Information (OSTI), May 2003. http://dx.doi.org/10.2172/15003960.

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Delahoy, A. E., and L. Chen. Advanced CIGS Photovoltaic Technology: Final Subcontract Report, 15 November 2001--13 February 2005. Office of Scientific and Technical Information (OSTI), August 2005. http://dx.doi.org/10.2172/15016818.

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Sites, J. R. Characterization and Analysis of CIGS and CdTE Solar Cells: December 2004 - July 2008. Office of Scientific and Technical Information (OSTI), January 2009. http://dx.doi.org/10.2172/947438.

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Britt, J., S. Wiedeman, and S. Albright. Process Development for CIGS Based Thin Film Photovoltaics Modules, Phase II Technical Report. Office of Scientific and Technical Information (OSTI), November 2000. http://dx.doi.org/10.2172/772436.

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Delahoy, A. E., J. Cambridge, L. Chen, and Z. J. Kiss. Thin Film CIGS Photovoltaic Technology: Final Technical Report, 16 April 1998 - 15 October 2001. Office of Scientific and Technical Information (OSTI), March 2002. http://dx.doi.org/10.2172/15000366.

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