Academic literature on the topic 'Chemical Vapour Deposition; Uranium hexafluoride'

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Chemical Vapour Deposition; Uranium hexafluoride.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Chemical Vapour Deposition; Uranium hexafluoride"

1

de Croon, M. H. J. M., E. N. Orij, and G. B. Marin. "The kinetics of the low-pressure chemical vapour deposition of molybdenum on silicon from molybdenum hexafluoride and hydrogen." Chemical Engineering Science 54, no. 15-16 (July 1999): 3315–25. http://dx.doi.org/10.1016/s0009-2509(98)00512-0.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Wood, J. "Studies of the reaction mechanisms for the chemical vapour deposition of tungsten from tungsten hexafluoride in a plasma environment." Vacuum 38, no. 8-10 (January 1988): 683–88. http://dx.doi.org/10.1016/0042-207x(88)90442-3.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Belkacem, A., Y. Arnal, J. Pelletier, E. André, and J. C. Oberlin. "Preparation of low resistivity tungsten thin films deposited by microwave-plasma-enhanced chemical vapour deposition from the tungsten hexafluoride-hydrogen system." Thin Solid Films 241, no. 1-2 (April 1994): 301–4. http://dx.doi.org/10.1016/0040-6090(94)90446-4.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Yulandra, Akbar, Bangun Wasito, and Noor Anis Kundari. "Prarancang Unit Proses Pabrikasi Coating Kernel UO2 dengan Kapasitas 10 Ton/Tahun." Jurnal Forum Nuklir 11, no. 1 (May 10, 2017): 7. http://dx.doi.org/10.17146/jfn.2017.11.1.3915.

Full text
Abstract:
PRARANCANGAN UNIT PROSES PABRIKASI COATING KERNEL UO2 DENGAN KAPASITAS 10 TON/TAHUN. Pabrik coating kernel UO2 dapat dirancang dengan melakukan beberapa tahapan yaitu: penentuan kapasitas, penentuan teknologi proses, perhitungan neraca massa, perhitungan neraca panas, perancangan alat, penentuan letak peralatan dan peta pabrik, dan perhitungan kelayakan pabrik berdasarkan analisis ekonomi. Pabrik coating kernel UO2 memiliki kapasitas 10 ton / tahun dengan waktu operasi 330 hari, proses yang digunakan dalam coating kernel uranium oksida adalah proses metoda chemical vapour deposition. Ukuran reaktor pelapisan porous pyrocarbon, inner pyrocarbon dan outter pyrocarbon dengan diameter dalam 1,08 m, tebal isolator 0,02 m, tebal shell 0,150 m dengan tinggi reaktor 5,54 m. Ukuran reaktor pelapisan Silicon carbide dengan diameter dalam 1,08 m, tebal isolator 0,09 m, tebal shell 0,260 m dengan tinggi reaktor 6.25 m. Utilitas meliputi listrik sebesar 924,81 kW, air sebanyak 441,836 m3. Hasil perhitungan kelayakan ekonomi menunjukan fix capital investment sebesar Rp 192.812.494.326,40, Working capital Rp 10.310.828.573,60, manufacturing cost Rp 406.596.300.982,24, ROI (Return On Investment) sebesar 22 % sebelum pajak dan 16 % setelah pajak, POT (Pay Out Time) sebesar 3 tahun sebelum pajak dan 3,8 tahun setelah pajak, SDP (Shut Down Point) sebesar 32,85 %, BEP (Break Even Point) sebesar 53,67 %.
APA, Harvard, Vancouver, ISO, and other styles
5

Kagilik, Ahmed S. "Dry Phosphorus silicate glass etching and surface conditioning and cleaning for multi-crystalline silicon solar cell processing." Solar Energy and Sustainable Development journal 3, no. 1 (February 15, 2021). http://dx.doi.org/10.51646/jsesd.v3i1.47.

Full text
Abstract:
As an alternative to the wet chemical etching method, dry chemical etching processes for Phosphorus silicate glass [PSG} layer rel11ova] using Tri?uormethane/Sulfur Hexafluoride (CHF3/ SF6) gas mixture in commercial silicon-nitride plasma enhanced chemical vapour deposition (SiN-PECVD) system is applied. The dependence of the solar cell performance on the etching temperature is investigated and optimized. It is found that the SiN-PECVD system temperature variation has a signi?cant impact on the whole solar cell characteristics. A dry plasma cleaning treatment of the Si wafer surface after the PSG removal step is also investigated and developed. The cleaning step is used to remove the polymer ?lm which is formed during the PSG etching using both oxygen and hydrogen gases. By applying an additional cleaning step, the polymer ?lm deposited on the silicon wafer surface after PSG etching is eliminated. The effect of different plasma cleaning conditions on solar cell performance is investigated. After optimization of the plasma operating conditions, the performance of the solar cell is improved and the overall gain in ef?ciency of 0.6 % absolute is yielded compared to a cell without any further cleaning step. On the other hand, the best solar cell characteristics can reach values close to that achieved by the conventional wet chemical etching processes demonstrating the effectiveness of the additional O2/H2 post cleaning treatment.
APA, Harvard, Vancouver, ISO, and other styles

Dissertations / Theses on the topic "Chemical Vapour Deposition; Uranium hexafluoride"

1

Downing, Edward Nicolas. "Surface studies of the adsorption and heterogeneous decomposition of UF←6 on well characterised surfaces with reference to U CVD." Thesis, University of Oxford, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.298233.

Full text
APA, Harvard, Vancouver, ISO, and other styles
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography