Relevant bibliographies by topics / Chemical vapor deposition

Academic literature on the topic 'Chemical vapor deposition'

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Published: 4 June 2021
Last updated: 29 July 2024

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Journal articles on the topic "Chemical vapor deposition"

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Besmann, T. M., D. P. Stinton, and R. A. Lowden. "Chemical Vapor Deposition Techniques." MRS Bulletin 13, no. 11 (November 1988): 45–51. http://dx.doi.org/10.1557/s0883769400063910.

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Chemical vapor deposition (CVD) is one of the few deposition processes in which the deposited phase is produced in situ via chemical reaction(s). Thus the vapor source for CVD can consist of high vapor pressure species at moderate temperatures and yet deposit very high-melting phases. For example, pure TiB2, which melts at 3225°C, can be produced at 900°C from TiCl4, BC13, and H2.Chemical vapor deposition and its variants such as low pressure CVD (LPCVD), plasma-assisted CVD (PACVD), and laser CVD (LCVD) have been active areas of research for many years. Recent review articles have contained extensive lists of the phases deposited by CVD, which include most of the metals and many carbides, nitrides, borides, silicides, and sulfides. The techniques have found increased acceptance as commercial methods for the fabrication of films and coatings which are fundamental to the semiconductor device and the high-performance tool bit industries. They have been used to prepare multiphase-multilayer coatings, stand-alone bodies, and fiber-reinforced composites. As the demand increases for more complex and sophisticated materials, it is expected that CVD will play a still larger role.In CVD a solid material is deposited from gaseous precursors onto a substrate. The substrate is typically heated to promote the deposition reaction and/or provide sufficient mobility of the adatoms to form the desired structure. Chemical vapor deposition was performed for the first time when early humans inadvertently coated cooking utensils with soot from the campfire. In this CVD process, hydrocarbons generated by the heated wood pyrolyzed on the utensil surface, depositing carbon.
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Celii, F. G., and J. E. Butler. "Diamond Chemical Vapor Deposition." Annual Review of Physical Chemistry 42, no. 1 (October 1991): 643–84. http://dx.doi.org/10.1146/annurev.pc.42.100191.003235.

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Miller, Linda M., and James J. Coleman. "Metalorganic chemical vapor deposition." Critical Reviews in Solid State and Materials Sciences 15, no. 1 (January 1988): 1–26. http://dx.doi.org/10.1080/10408438808244623.

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Eigenbrod, Volkmar J., Christina Hensch, and Alexander Kemper. "Combustion chemical vapor deposition." Vakuum in Forschung und Praxis 27, no. 3 (June 2015): 30–34. http://dx.doi.org/10.1002/vipr.201500581.

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Abdulrazza, Firas H. "Comparison between Chemical Vapor Deposition and Flame Fragments Deposition Techniques for Synthesizing Carbon Nanotubes." NeuroQuantology 18, no. 4 (April 20, 2020): 05–10. http://dx.doi.org/10.14704/nq.2020.18.4.nq20154.

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SEKIGUCHI, Atsushi. "Fundamentals of Chemical Vapor Deposition Technologies." Journal of the Vacuum Society of Japan 59, no. 7 (2016): 171–83. http://dx.doi.org/10.3131/jvsj2.59.171.

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Zhirnov, V. V. "Chemical vapor deposition and plasma-enhanced chemical vapor deposition carbonization of silicon microtips ∗." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 12, no. 2 (March 1994): 633. http://dx.doi.org/10.1116/1.587402.

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Healy, Matthew D., and David C. Smith. "Metallic Chemical Vapor Deposition: New Deposition Technologies." Materials Technology 8, no. 7-8 (July 1993): 149–53. http://dx.doi.org/10.1080/10667857.1993.11784968.

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Byun, Dongjin, Yongki Jin, Bumjoon Kim, Joong Kee Lee, and Dalkeun Park. "Photocatalytic TiO2 deposition by chemical vapor deposition." Journal of Hazardous Materials 73, no. 2 (April 2000): 199–206. http://dx.doi.org/10.1016/s0304-3894(99)00179-x.

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KAKIUCHI, Hiroaki. "Plasma-Enhanced Chemical Vapor Deposition." Journal of the Japan Society for Precision Engineering 82, no. 11 (2016): 956–60. http://dx.doi.org/10.2493/jjspe.82.956.

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Dissertations / Theses on the topic "Chemical vapor deposition"

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Haberer, Elaine D. (Elaine Denise) 1975. "Particle generation in a chemical vapor deposition/plasma-enhanced chemical vapor deposition interlayer dielectric tool." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/8992.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1998.
Includes bibliographical references (p. 77-79).
The interlayer dielectric plays an important role in multilevel integration. Material choice, processing, and contamination greatly impact the performance of the layer. In this study, particle generation, deposition, and adhesion mechanisms are reviewed. In particular, four important sources of interlayer dielectric particle contamination were investigated: the cleanroom environment, improper wafer handling, the backside of the wafer, and microarcing during process.
by Elaine D. Haberer.
S.M.
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Karaman, Mustafa. "Chemical Vapor Deposition Of Boron Carbide." Phd thesis, METU, 2007. http://etd.lib.metu.edu.tr/upload/3/12608778/index.pdf.

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Boron carbide was produced on tungsten substrate in a dual impinging-jet CVD reactor from a gas mixture of BCl3, CH4, and H2. The experimental setup was designed to minimise the effect of mass transfer on reaction kinetics, which, together with the on-line analysis of the reactor effluent by FTIR, allowed a detailed kinetic investigation possible. The phase and morphology studies of the products were made by XPS, XRD,micro hardness and SEM methods. XPS analysis showed the existence of chemical states attributed to the boron carbide phase, together with the existence of oxy-boron carbide species. SEM pictures revealed the formation of 5-fold icosahedral boron carbide crystals up to 30 micron sizes for the samples produced at 1300oC. Microhardness tests showed change of boron carbide hardness with the temperature of tungsten substrate. The hardness values (Vickers Hardness) observed were between 3850 kg/mm2 and 4750 kg/mm2 corresponding to substrate temperatures of 1100 and 1300 C, respectively. The FTIR analysis of the reaction products proved the formation of reaction intermediate BHCl2, which is proposed to occur mainly in the gaseous boundary layer next to the substrate surface. The experimental parameters are the temperature of the substrate, and the molar fractions of methane and borontrichloride at the reactor inlet. The effects of those parameters on the reaction rates, conversions and selectivities were analysed and such analyses were used in mechanism determination studies. An Arrhenius type of a rate expression was obtained for rate of formation of boron carbide with an energy of activation 56.1 kjoule/mol and the exponents of methane and boron trichloride in the reaction rate expression were 0.64 and 0.34, respectively, implying complexity of reaction. In all of the experiments conducted, the rate of formation of boron carbide was less than that of dichloroborane. Among a large number of reaction mechanisms proposed only the ones considering the molecular adsorption of boron trichloride on the substrate surface and formation of dichloroborane in the gaseous phase gave reasonable fits to the experimental data. Multiple non-linear regression analysis was carried out to predict the deposition rate of boron carbide as well as formation rate of dichloroborane simultaneously.
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Pickering, Elliot. "Chemical vapor deposition of Ti₃SiC₂." Thesis, Georgia Institute of Technology, 1998. http://hdl.handle.net/1853/19463.

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Barua, Himel Barua. "COMPUTATIONAL MODELING OF CHEMICAL VAPOR DEPOSITION." University of Akron / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=akron1469721885.

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Sukkaew, Pitsiri. "A Quantum Chemical Exploration of SiC Chemical Vapor Deposition." Doctoral thesis, Linköpings universitet, Halvledarmaterial, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-133941.

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SiC is a wide bandgap semiconductor with many attractive properties. It hasattracted particular attentions in the areas of power and sensor devices as wellas biomedical and biosensor applications. This is owing to its properties suchas large bandgap, high breakdown electric field, high thermal conductivitiesand chemically robustness. Typically, SiC homoepitaxial layers are grownusing the chemical vapor deposition (CVD) technique. Experimental studiesof SiC CVD have been limited to post-process measuring of the layer ratherthan in situ measurements. In most cases, the observations are presented interms of input conditions rather than in terms of the unknown growth conditionnear the surface. This makes it difficult to really understand the underlyingmechanism of what causes the features observed experimentally. Withhelp of computational methods such as computational fluid dynamic (CFD)we can now explore various variables that are usually not possible to measure.CFD modeling of SiC CVD, however, requires inputs such as thermochemicalproperties and chemical reactions, which in many cases are not known. In thisthesis, we use quantum chemical calculations to provide the missing detailscomplementary to CFD modeling. We first determine the thermochemical properties of the halides and halohydridesof Si and C species, SiHnXm and CHnXm, for X being F, Cl and Brwhich were shown to be reliable compared to the available experimentaland/or theoretical data. In the study of gas-phase kinetics, we combine ab initiomethods and DFTs with conventional transition state theory to derive kineticparameters for gas phase reactions related to Si-H-X species. Lastly, westudy surface adsorptions related to SiC-CVD such as adsorptions of small CHand Si-H-X species, and in the case of C-H adsorption, the study was extendedto include subsequent surface reactions where stable surface productsmay be formed.
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Martin, Tyler Philip. "Platinumisilica Thin Films by Chemical Vapor Deposition." Fogler Library, University of Maine, 2002. http://www.library.umaine.edu/theses/pdf/MartinTP2002.pdf.

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Danielsson, Örjan. "Simulations of silicon carbide chemical vapor deposition /." Linköping : Univ, 2002. http://www.bibl.liu.se/liupubl/disp/disp2002/tek773s.pdf.

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Park, Jae-hyoung. "Process planning for laser chemical vapor deposition." Thesis, Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/18367.

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Nemirovskaya, Maria A. 1972. "Multiscale modeling strategies for chemical vapor deposition." Thesis, Massachusetts Institute of Technology, 2002. http://hdl.handle.net/1721.1/8500.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2002.
Includes bibliographical references.
In order to predict the quality of the fabricated devices as a function of growth conditions in chemical vapor deposition (CVD) reactors, a model should describe multiple time and length scales. These scales include the reactor scale ([approx]0.1-1 m), the feature scale ([approx.]0.1-100 [mu]m), and the atomistic morphology evolution scale ([approx.]10 nm). At present, good reactor and feature scale models are available. However, the linking between them has been done only for low pressure CVD. Also, the atomistic Kinetic Monte Carlo models have been developed only for deposition on unpatterned substrates or over V-grooves. In this work the linking between reactor and feature scale models for both low and high pressure CVD is achieved by matching concentrations and fluxes across the interface. For low-pressure systems, we improve the convergence of the previously developed linking schemes by applying a flux-split algorithm. We analyze the assumptions underlying the linking, and demonstrate that the size of the feature domain is constrained by these assumptions and not simply by the assumption of collisionless gas phase transport. At high-pressure, mass transport between features complicates solution of the entire feature field. To capture the diffusive inter-feature transport, we develop the overlapping computational domains method. The simulation results obtained with the multiscale method are in excellent agreement with experimental data for selective epitaxy of AlGaAs in the presence of HC1. A KMC model is developed for AlGaAs surface morphology evolution during selective epitaxy. The model takes into account zincblende structure of AlGaAs, and reproduces the c(4x4) reconstruction on (100) surfaces.
(cont.) In order to model selective epitaxy, the mask is represented as a hard wall boundary condition, and overgrowth on (111)A facets is included. With this model, we investigate the effects of the unknown parameters and the growth conditions on film morphology evolution. The observed trends are in agreement with the experimental data. Since KMC simulations are limited to small surfaces and short deposition times we propose algorithms for linking the KMC and mesoscale feature shape evolution models. Finally, the feasibility of linking the coupled KMC-mesoscale model and the reactor or reactor-feature scale models is assessed.
by Maria A. Nemirovskaya.
Ph.D.
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Martin, Tyler Philip 1977. "Chemical vapor deposition of antimicrobial polymer coatings." Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/38968.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2007.
Includes bibliographical references.
There is large and growing interest in making a wide variety of materials and surfaces antimicrobial. Initiated chemical vapor deposition (iCVD), a solventless low-temperature process, is used to form thin films of polymers on fragile substrates. To improve research efficiency, a new combinatorial iCVD system was fabricated and used to efficiently determine the deposition kinetics for two new polymeric thin films, poly(diethylaminoethylacrylate) (PDEAEA) and poly(dimethylaminomethylstyrene) (PDMAMS), both candidates for antimicrobial coatings. Fourier transform infrared (FTIR) spectroscopy shows that functional groups are retained in iCVD of PDMAMS and PDEAEA, whereas essentially all fine chemical structure of the material is destroyed in plasma-enhanced CVD. It was found that the combinatorial system in all cases provided agreement, within experimental certainty, with results of blanket iCVD depositions, thus validating the use of the combinatorial system for future iCVD studies. Finished nylon fabric was subsequently coated with PDMAMS by iCVD with no affect on the color or feel of the fabric. Coatings PDMAMS of up to 540 gg/cm2 were deposited on fabric.
(cont.) A coating of 40 gpg/cm2 of fabric was found to be very effective against gram-negative E. coli, with over a 99.9999%, or 6 log, reduction in viable bacteria in one hour. A coating of 120 gg/cm2 was most effective against the gram-positive B. subtilis. Further tests confirmed that the iCVD polymer did not leach off the fabric. Type-II photoinitiation was utilized to perform vapor phase deposition of covalently-bound polymer coatings of the polymer PDMAMS. The durability was improved so that 80 wt% of the fabric coating was retained after extended antimicrobial testing and three rounds of ultrasonication. The coating was effective, killing 99.9% of E. coli in one hour. The gCVD process was then further explored using the less-UV-sensitive monomer DEAEA for deposition onto spun cast PMMA thin films. Durable films up to 54 nm thick retained 94% of their thickness after 10 rounds of ultrasonication. Gel Permeation Chromatography (GPC) and Variable Angle Spectroscopic Ellipsometry (VASE) swelling cell measurements gave estimated ranges of 72-156 kDa for the molecular weight and 0.1-0.24 chains/nm2 for the graft density.
by Tyler P. Martin.
Ph.D.
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Books on the topic "Chemical vapor deposition"

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Sivaram, Srinivasan. Chemical Vapor Deposition. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4757-4751-5.

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Fortin, Jeffrey B., and Toh-Ming Lu. Chemical Vapor Deposition Polymerization. Boston, MA: Springer US, 2004. http://dx.doi.org/10.1007/978-1-4757-3901-5.

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Gesheva, K. A. Chemical vapor deposition (CVD) technology. Hauppauge, N.Y: Nova Science Publishers, 2008.

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Dobkin, Daniel M., and Michael K. Zuraw. Principles of Chemical Vapor Deposition. Dordrecht: Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-017-0369-7.

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Dobkin, Daniel M. Principles of Chemical Vapor Deposition. Dordrecht: Springer Netherlands, 2003.

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O, Pierson Hugh, ed. Handbook of chemical vapor deposition. 2nd ed. Norwich, NY: Noyes Publications, 1999.

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K, Zuraw Michael, ed. Principles of chemical vapor deposition. Dordrecht: Kluwer Academic Publishers, 2003.

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Sherman, Arthur. Chemical vapor deposition for microelectronics: Principles, technology, and applications. Park Ridge, N.J., U.S.A: Noyes Publications, 1987.

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Moroșanu, C. E. Thin films by chemical vapour deposition. Amsterdam: Elsevier, 1990.

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United States. National Aeronautics and Space Administration. Scientific and Technical Information Program., ed. Numerical modeling tools for chemical vapor deposition. [Washington, D.C.]: National Aeronautics and Space Administration, Office of Management, Scientific and Technical Information Program, 1992.

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Book chapters on the topic "Chemical vapor deposition"

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Sivaram, Srinivasan. "Chemical Equilibrium and Kinetics." In Chemical Vapor Deposition, 62–93. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4757-4751-5_4.

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Sivaram, Srinivasan. "Introduction." In Chemical Vapor Deposition, 1–7. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4757-4751-5_1.

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Sivaram, Srinivasan. "CVD of Semiconductors." In Chemical Vapor Deposition, 227–65. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4757-4751-5_10.

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Sivaram, Srinivasan. "Emerging CVD Techniques." In Chemical Vapor Deposition, 266–72. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4757-4751-5_11.

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Sivaram, Srinivasan. "Thin Film Phenomena." In Chemical Vapor Deposition, 8–40. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4757-4751-5_2.

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Sivaram, Srinivasan. "Manufacturability." In Chemical Vapor Deposition, 41–61. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4757-4751-5_3.

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Sivaram, Srinivasan. "Reactor Design for Thermal CVD." In Chemical Vapor Deposition, 94–118. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4757-4751-5_5.

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Sivaram, Srinivasan. "Fundamentals of Plasma Chemistry." In Chemical Vapor Deposition, 119–43. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4757-4751-5_6.

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Sivaram, Srinivasan. "Processing Plasmas and Reactors." In Chemical Vapor Deposition, 144–62. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4757-4751-5_7.

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Sivaram, Srinivasan. "CVD of Conductors." In Chemical Vapor Deposition, 163–203. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4757-4751-5_8.

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Conference papers on the topic "Chemical vapor deposition"

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COLEMAN, JAMES J. "Metal-organic chemical vapor deposition." In Conference on Lasers and Electro-Optics. Washington, D.C.: OSA, 1985. http://dx.doi.org/10.1364/cleo.1985.tho2.

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Mronga, Norbert, J. Adel, and Erwin Czech. "Carriers by chemical vapor deposition." In SC - DL tentative, edited by Joseph Gaynor. SPIE, 1990. http://dx.doi.org/10.1117/12.19806.

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Amazawa, Takao, and Hiroaki Nakamura. "Selective Chemical Vapor Deposition of Aluminum." In 1986 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1986. http://dx.doi.org/10.7567/ssdm.1986.a-11-5.

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BRELAND, WILLIAM G., MICHAEL E. COLTRIN, and PAULINE HO. "Laser diagnostics for chemical vapor deposition." In Conference on Lasers and Electro-Optics. Washington, D.C.: OSA, 1985. http://dx.doi.org/10.1364/cleo.1985.wi3.

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Spear, Guy, Kent Hennessey, David Polen, and Vincent Fry. "Hot wall chemical vapor deposition model." In 30th Thermophysics Conference. Reston, Virigina: American Institute of Aeronautics and Astronautics, 1995. http://dx.doi.org/10.2514/6.1995-2121.

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George, Pradeep, Hae Chang Gea, and Yogesh Jaluria. "Optimization of Chemical Vapor Deposition Process." In ASME 2006 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. ASMEDC, 2006. http://dx.doi.org/10.1115/detc2006-99748.

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Chemical Vapor Deposition (CVD) process is simulated and optimized for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. The intended application dictates the level of quality need for the film. Proper control of the governing transport processes results in large area film thickness and composition uniformity. A vertical impinging CVD reactor is considered. The goal is to optimize the CVD system. The effect of important design parameters and operating conditions are studied using numerical simulations. Then Compromise Response Surface Method (CRSM) is used to model the process over a range of susceptor temperature and inlet velocity of the reaction gases. The resulting response surface is used to optimize the CVD system.
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Keeley, Joseph T., Mohamed S. El-Genk, and Mark D. Hoover. "Chemical Vapor Deposition of Tantalum Carbide." In SPACE NUCLEAR POWER AND PROPULSION: Eleventh Symposium. AIP, 1994. http://dx.doi.org/10.1063/1.2950229.

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Breiland, William G., Pauline Ho, and Michael E. Coltrin. "Laser Spectroscopy of Chemical Vapor Deposition." In Lasers in Material Diagnostics. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/lmd.1987.wd1.

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Chemical vapor deposition (CVD) is an important industrial process used to deposit solid films for protective coatings and microelectronic applications. The CVD processes used in the fabrication of microelectronic devices are becoming more complex, and higher demands are being made on the resulting films. A fundamental understanding of the chemistry and physics of CVD may help meet future process control requirements, and could lead to novel deposition methods.
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Olmer, L. J., and E. R. Lory. "Intermetal dielectric deposition by plasma enhanced chemical vapor deposition." In Fifth IEEE/CHMT International Electronic Manufacturing Technology Symposium, 1988, 'Design-to-Manufacturing Transfer Cycle. IEEE, 1988. http://dx.doi.org/10.1109/emts.1988.16157.

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Tabib-Azar, Massood, and Wen Yuan. "Tip based chemical vapor deposition of silicon." In 2010 Ninth IEEE Sensors Conference (SENSORS 2010). IEEE, 2010. http://dx.doi.org/10.1109/icsens.2010.5690650.

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Reports on the topic "Chemical vapor deposition"

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Baron, B. N., R. E. Rocheleau, and S. S. Hegedus. Chemical vapor deposition and photochemical vapor deposition of amorphous silicon photovoltaic devices. Office of Scientific and Technical Information (OSTI), November 1989. http://dx.doi.org/10.2172/5042415.

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Mayer, T. M., D. P. Adams, B. S. Swartzentruber, and E. Chason. Dynamics of nucleation in chemical vapor deposition. Office of Scientific and Technical Information (OSTI), November 1995. http://dx.doi.org/10.2172/170570.

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Rice, Anthony, and Mary Crawford. Chemical Vapor Deposition of Cubic Boron Nitride. Office of Scientific and Technical Information (OSTI), September 2021. http://dx.doi.org/10.2172/1821316.

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HO, PAULINE. Chemical reactions in TEOS/ozone chemical vapor deposition[TetraEthylOrtho Silicate]. Office of Scientific and Technical Information (OSTI), February 2000. http://dx.doi.org/10.2172/751369.

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Kaplan, Daniel, Kendall Mills, and Venkataraman Swaminathan. Chemical Vapor Deposition of Atomically-Thin Molybdenum Disulfide (MoS2). Fort Belvoir, VA: Defense Technical Information Center, March 2015. http://dx.doi.org/10.21236/ada613852.

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Stevenson, D. A. Fundamental studies of the chemical vapor deposition of diamond. Office of Scientific and Technical Information (OSTI), January 1991. http://dx.doi.org/10.2172/5639356.

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Muenchausen, R. Chemical-vapor deposition of complex oxides: materials and process development. Office of Scientific and Technical Information (OSTI), November 1996. http://dx.doi.org/10.2172/405750.

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Banks, H. T. Modeling Validation and Control of Advanced Chemical Vapor Deposition Processes. Fort Belvoir, VA: Defense Technical Information Center, November 2000. http://dx.doi.org/10.21236/ada384359.

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Lampert, Lester. High-Quality Chemical Vapor Deposition Graphene-Based Spin Transport Channels. Portland State University Library, January 2000. http://dx.doi.org/10.15760/etd.3308.

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Kagan, Harris, Richard Kass, and K. K. Gan. Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications. Office of Scientific and Technical Information (OSTI), January 2014. http://dx.doi.org/10.2172/1115741.

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