Journal articles: 'Charge-to-Spin conversion'

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Caprara, Sergio. "Spin-to-charge current conversion." Nature Materials 15, no. 12 (November 23, 2016): 1224–25. http://dx.doi.org/10.1038/nmat4806.

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Hoque, Anamul Md, Bing Zhao, Dmitrii Khokhriakov, Prasanta Muduli, and Saroj P. Dash. "Charge to spin conversion in van der Waals metal NbSe₂." Applied Physics Letters 121, no. 24 (December 12, 2022): 242404. http://dx.doi.org/10.1063/5.0121577.

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Quantum materials with a large charge current-induced spin polarization are promising for next-generation all-electrical spintronic science and technology. Van der Waals metals with high spin–orbit coupling and spin textures have attracted significant attention for an efficient charge-to-spin conversion process. Here, we demonstrate the electrical generation of spin polarization in NbSe2 up to room temperature. Characterization of NbSe2 shows superconducting transition temperature, Tc ∼ 7 K. To probe the current-induced spin polarization in NbSe2, we used a graphene-based non-local spin-valve device, where the spin-polarization in NbSe2 is efficiently injected and detected using non-local spin-switch and Hanle spin precession measurements. A significantly higher charge-spin conversion in NbSe2 is observed at a lower temperature. Systematic measurements provide the possible origins of the spin polarization to be predominantly due to the spin Hall effect or Rashba–Edelstein effect in NbSe2, considering different symmetry-allowed charge-spin conversion processes.

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Safranski, Christopher, Jonathan Z. Sun, and Andrew D. Kent. "A perspective on electrical generation of spin current for magnetic random access memories." Applied Physics Letters 120, no. 16 (April 18, 2022): 160502. http://dx.doi.org/10.1063/5.0084551.

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Spin currents are used to write information in magnetic random access memory (MRAM) devices by switching the magnetization direction of one of the ferromagnetic electrodes of a magnetic tunnel junction (MTJ) nanopillar. Different physical mechanisms of conversion of charge current to spin current can be used in two-terminal and three-terminal device geometries. In two-terminal devices, charge-to-spin conversion occurs by spin filtering in the MTJ's ferromagnetic electrodes and present day MRAM devices operate near the theoretically expected maximum charge-to-spin conversion efficiency. In three-terminal devices, spin–orbit interactions in a channel material can also be used to generate large spin currents. In this Perspective article, we discuss charge-to-spin conversion processes that can satisfy the requirements of MRAM technology. We emphasize the need to develop channel materials with larger charge-to-spin conversion efficiency—that can equal or exceed that produced by spin filtering—and spin currents with a spin polarization component perpendicular to the channel interface. This would enable high-performance devices based on sub-20 nm diameter perpendicularly magnetized MTJ nanopillars without need of a symmetry breaking field. We also discuss MRAM characteristics essential for CMOS integration. Finally, we identify critical research needs for charge-to-spin conversion measurements and metrics that can be used to optimize device channel materials and interface properties prior to full MTJ nanopillar device fabrication and characterization.

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Wang, Qiuru, Wenxu Zhang, Bin Peng, Huizhong Zeng, and Wanli Zhang. "Spin to Charge Conversion at the Conducting TiO2Surface." physica status solidi (RRL) - Rapid Research Letters 11, no. 9 (July 31, 2017): 1700149. http://dx.doi.org/10.1002/pssr.201700149.

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Wen, Zhenchao, Zhiyong Qiu, Sebastian Tölle, Cosimo Gorini, Takeshi Seki, Dazhi Hou, Takahide Kubota, Ulrich Eckern, Eiji Saitoh, and Koki Takanashi. "Spin-charge conversion in NiMnSb Heusler alloy films." Science Advances 5, no. 12 (December 2019): eaaw9337. http://dx.doi.org/10.1126/sciadv.aaw9337.

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Half-metallic Heusler alloys are attracting considerable attention because of their unique half-metallic band structures, which exhibit high spin polarization and yield huge magnetoresistance ratios. Besides serving as ferromagnetic electrodes, Heusler alloys also have the potential to host spin-charge conversion. Here, we report on the spin-charge conversion effect in the prototypical Heusler alloy NiMnSb. An unusual charge signal was observed with a sign change at low temperature, which can be manipulated by film thickness and ordering structure. It is found that the spin-charge conversion has two contributions. First, the interfacial contribution causes a negative voltage signal, which is almost constant versus temperature. The second contribution is temperature dependent because it is dominated by minority states due to thermally excited magnons in the bulk part of the film. This work provides a pathway for the manipulation of spin-charge conversion in ferromagnetic metals by interface-bulk engineering for spintronic devices.

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Bleser, S. M., R. M. Greening, M. J. Roos, L. A. Hernandez, X. Fan, and B. L. Zink. "Negative spin Hall angle and large spin-charge conversion in thermally evaporated chromium thin films." Journal of Applied Physics 131, no. 11 (March 21, 2022): 113904. http://dx.doi.org/10.1063/5.0085352.

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Spin-to-charge conversion and the reverse process are now critically important physical processes for a wide range of fundamental and applied studies in spintronics. Here, we experimentally demonstrate effective spin-to-charge conversion in thermally evaporated chromium thin films using the longitudinal spin Seebeck effect (LSSE). We present LSSE results measured near room temperature for Cr films with thicknesses from 2 to 11 nm, deposited at room temperature on bulk polycrystalline yttrium-iron-garnet (YIG) substrates. Comparison of the measured LSSE voltage, [Formula: see text], in Cr to a sputtered Pt film at the same nominal thickness grown on a matched YIG substrate shows that both films show comparably large spin-to-charge conversion. As previously shown for other forms of Cr, the LSSE signal for evaporated Cr/YIG shows the opposite sign compared to Pt, indicating that Cr has a negative spin Hall angle, [Formula: see text]. We also present measured charge resistivity, [Formula: see text], of the same evaporated Cr films on YIG. These values are large compared to Pt and comparable to [Formula: see text]-W at a similar thickness. Non-monotonic behavior of both [Formula: see text] and [Formula: see text] with film thickness suggests that spin-to-charge conversion in evaporated Cr, which we expect has a different strain state than previously investigated sputtered films, could be modified by spin density wave antiferromagnetism in Cr.

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Li, Rui-Hao, Pengtao Shen, and Steven S. L. Zhang. "Tunable spin–charge conversion in class-I topological Dirac semimetals." APL Materials 10, no. 4 (April 1, 2022): 041108. http://dx.doi.org/10.1063/5.0077431.

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We theoretically demonstrate that class-I topological Dirac semimetals (TDSMs) can provide a platform for realizing both electrically and magnetically tunable spin–charge conversion. With time-reversal symmetry, the spin component along the uniaxial rotation axis ( z axis) is approximately conserved, which leads to an anisotropic spin Hall effect; the resulting spin Hall current relies on the relative orientation between the external electric field and the z axis. The application of a magnetic field, on the other hand, breaks time-reversal symmetry, driving the TDSM into a Weyl semimetal phase and, consequently, partially converting the spin current to a charge Hall current. Using the Kubo formulas, we numerically evaluate the spin and charge Hall conductivities based on a low-energy TDSM Hamiltonian together with the Zeeman coupling. Besides the conventional tensor element of the spin Hall conductivity [Formula: see text], we find that unconventional components, such as [Formula: see text] and [Formula: see text], also exist and vary as the magnetic field is rotated. Likewise, the charge Hall conductivity also exhibits appreciable tunability upon variation of the magnetic field. We show that such tunability—as well as large spin–charge conversion efficiency—arises from the interplay of symmetry and band topology of the TDSMs.

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Bai, H., Y. C. Zhang, L. Han, Y. J. Zhou, F. Pan, and C. Song. "Antiferromagnetism: An efficient and controllable spin source." Applied Physics Reviews 9, no. 4 (December 2022): 041316. http://dx.doi.org/10.1063/5.0101981.

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Antiferromagnetic (AFM) spintronics is an emerging field, with significant advances in particular in the study of the tunable spin generation, transport, manipulation, and detection based on the control and probe of AFM moments. The Néel-vector-dependent spin current generation in AFM materials makes them an efficient and controllable spin source, paving the way for future spintronic devices with ultralow power consumption and high operability. Herein, we aim to provide a comprehensive review of recent progress in charge-spin conversion mediated by AFMs. First, we present a brief summary of several typical characterization techniques of charge-spin conversion. Then, we focus on the recent efforts for improving the charge-spin conversion efficiency and performances of spin torques in the antiferromagnet/ferromagnet bilayer. In the third part, we review the controllable spin current and multidirectional spin polarization generated by AFMs and the resultant field-free magnetization switching. Finally, we discuss the prospects of the AFM spin sources, which will inspire more in-depth studies and advance practical applications.

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Su, Yu-Lun, Zheng-Xing Wei, Liang Cheng, and Jing-Bo Qi. "Terahertz emitters based on ultrafast spin-to-charge conversion." Acta Physica Sinica 69, no. 20 (2020): 204202. http://dx.doi.org/10.7498/aps.69.20200715.

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10

Rinaldi, C., J. C. Rojas-Sánchez, R. N. Wang, Y. Fu, S. Oyarzun, L. Vila, S. Bertoli, et al. "Evidence for spin to charge conversion in GeTe(111)." APL Materials 4, no. 3 (March 2016): 032501. http://dx.doi.org/10.1063/1.4941276.

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Das, Saikat, Satoshi Sugimoto, Varun Kumar Kushwaha, Yusuke Kozuka, and Shinya Kasai. "Observation of charge-to-spin conversion with giant efficiency at Ni_0.8Fe_0.2/Bi₂WO₆ interface." APL Materials 11, no. 4 (April 1, 2023): 041113. http://dx.doi.org/10.1063/5.0142695.

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Magnetization switching using spin–orbit torque offers a promising route to developing non-volatile memory technologies. The prerequisite, however, is the charge-to-spin current conversion, which has been achieved traditionally by harnessing the spin–orbit interaction in heavy metals, topological insulators, and heterointerfaces hosting a high-mobility two-dimensional electron gas. Here, we report the observation of charge-to-spin current conversion at the interface between ferromagnetic Ni0.8Fe0.2 and ferroelectric Bi2WO6 thin films. The resulting spin–orbit torque consists of damping-like and field-like components, and the estimated efficiency amounts to about 0.48 ± 0.02, which translates to 0.96 ± 0.04 nm−1 in terms of interfacial efficiency. These numbers are comparable to contemporary spintronic materials exhibiting giant spin–orbit torque efficiency. We suggest that the Rashba Edelstein effect underpins the charge-to-spin current conversion on the interface side of Ni0.8Fe0.2. Further, we provide an intuitive explanation for the giant efficiency in terms of the spin-orbit proximity effect, which is enabled by orbital hybridization between W and Ni (Fe) atoms across the interface. Our work highlights that Aurivillius compounds are a potential addition to the emerging transition metal oxide-based spin–orbit materials.

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Su, Shu Hsuan, Cheong-Wei Chong, Jung-Chuan Lee, Yi-Chun Chen, Vyacheslav Viktorovich Marchenkov, and Jung-Chun Andrew Huang. "Effect of Cu Intercalation Layer on the Enhancement of Spin-to-Charge Conversion in Py/Cu/Bi2Se3." Nanomaterials 12, no. 20 (October 20, 2022): 3687. http://dx.doi.org/10.3390/nano12203687.

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The spin-to-charge conversion in Permalloy (Py)/Cu/Bi2Se3 is tunable by changing the Cu layer thickness. The conversion rate was studied using the spin pumping technique. The inverse Edelstein effect (IEE) length λIEE is found to increase up to ~2.7 nm when a 7 nm Cu layer is introduced. Interestingly, the maximized λIEE is obtained when the effective spin-mixing conductance (and thus Js) is decreased due to Cu insertion. The monotonic increase in λIEE with decreasing Js suggests that the IEE relaxation time (τ) is enhanced due to the additional tunnelling barrier (Cu layer) that limits the interfacial transmission rate. The results demonstrate the importance of interface engineering in the magnetic heterostructure of Py/topological insulators (TIs), the key factor in optimizing spin-to-charge conversion efficiency.

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Safeer, C. K., Franz Herling, Won Young Choi, Nerea Ontoso, Josep Ingla-Aynés, Luis E. Hueso, and Fèlix Casanova. "Reliability of spin-to-charge conversion measurements in graphene-based lateral spin valves." 2D Materials 9, no. 1 (December 9, 2021): 015024. http://dx.doi.org/10.1088/2053-1583/ac3c9b.

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Abstract Understanding spin physics in graphene is crucial for developing future two-dimensional spintronic devices. Recent studies show that efficient spin-to-charge conversions (SCCs) via either the inverse spin Hall effect or the inverse Rashba–Edelstein effect (IREE) can be achieved in graphene by proximity with an adjacent spin–orbit coupling (SOC) material. Lateral spin valve devices, made up of a graphene Hall bar and ferromagnets, are best suited for such studies. Here, we report that signals mimicking the IREE can be measured in pristine graphene possessing negligible SOC, confirming that these signals are unrelated to SCC. We identify either the anomalous Hall effect in the ferromagnet or the ordinary Hall effect in graphene induced by stray fields as the possible sources of this artefact. By quantitatively comparing these options with finite-element-method simulations, we conclude the latter better explains our results. Our study deepens the understanding of SCC measurement schemes in graphene, which should be taken into account when designing future experiments.

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14

Jayakumar, Harishankar, Siddharth Dhomkar, Jacob Henshaw, and Carlos A. Meriles. "Spin readout via spin-to-charge conversion in bulk diamond nitrogen-vacancy ensembles." Applied Physics Letters 113, no. 12 (September 17, 2018): 122404. http://dx.doi.org/10.1063/1.5040261.

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15

Abrão, J. E., G. Carlini, J. B. S. Mendes, and A. Azevedo. "Efficient and controlled manipulation of the spin Hall angle in Pt–Ag interface." Applied Physics Letters 120, no. 24 (June 13, 2022): 242402. http://dx.doi.org/10.1063/5.0093853.

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The spin Hall angle ( θSH) is a measure of efficiency of the spin-to-charge conversion process. In this paper, we report that it is possible to control the θSH by engineering an array of Ag microdisks by direct write laser lithography in multilayers formed by Pt/Ag/Pt/Py (Ni20Fe80) grown on Si/SiO2 substrates. The investigation of the spin-to-charge conversion was made using spin pumping measurements, and it was shown that as the number of disks increases, the current generated by the spin pumping also increases. This result demonstrates that it is possible to tune the spin Hall angle by changing the number of the Ag microdisks while keeping their size and shape fixed.

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Yu, Tian, Hao Wu, Haoran He, Chenyang Guo, Chi Fang, Peng Zhang, Kin L. Wong, Shijie Xu, Xiufeng Han, and Kang L. Wang. "Large spin to charge conversion in antiferromagnetic Weyl semimetal Mn3Sn." APL Materials 9, no. 4 (April 1, 2021): 041111. http://dx.doi.org/10.1063/5.0045627.

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Magginetti, David, Kun Tian, and Ashutosh Tiwari. "β-Tantalum, a better candidate for spin-to-charge conversion." Solid State Communications 249 (January 2017): 34–37. http://dx.doi.org/10.1016/j.ssc.2016.10.011.

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Iimori, Riku, Sora Obinata, Akihiro Mitsuda, and Takashi Kimura. "Pressure-induced enhancement of spin-charge conversion efficiency in CoFeB/Pt bilayer." Applied Physics Express 15, no. 3 (February 28, 2022): 033003. http://dx.doi.org/10.35848/1882-0786/ac5501.

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Abstract We experimentally investigate the influence of the pressure on the spin-charge conversion efficiency in a CoFeB/Pt bilayer system by using a specially designed pressure-cell setup. The dc voltage spectra under the dynamical spin injection is found to show the systematic increase with increasing pressure. These modifications can be understood by the enhancement of the spin-charge conversion efficiency due to the modulation of the spin-orbit interaction and/or the exchange interaction at the interface. The present demonstration indicates that the pressure provides a tunable functionality for the physical constants in spintronic devices.

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Shigematsu, Ei, Eiiti Tamura, Ryo Ohshima, Yuichiro Ando, and Masashi Shiraishi. "Full calculation of inter-conversion between charge, spin, and heat current using a common partial differential equation platform." Journal of Applied Physics 131, no. 24 (June 28, 2022): 243903. http://dx.doi.org/10.1063/5.0088343.

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We present a simple implementation of calculation of spin current profiles using a partial differential equation platform. By solving multiple scalar potentials, spin injection, spin/charge inter-conversion, and thermal spin injection phenomena can be well reproduced numerically. As a demonstration, we show spin current generation and detection in a composite of ferromagnetic, spin conducting, and spin-Hall-metallic materials. Furthermore, we present a model extended to three-dimensionally polarized spin current and describe the matrix for spin/charge current inter-conversion in a conductive ferromagnet, which allows for numerical reproduction of anomalous and planar Hall effects. It is found that the planar Hall voltage is in part generated by spin Hall conductivities, though its magnitude is orders smaller than that induced by the anisotropic magnetoresistance. Our method will contribute to further development of effective and feasible simulations of spin-current-mediated systems.

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Mendes, J. B. S., R. C. O. Guedes, and R. O. Cunha. "Spin transport and spin-to-charge current conversion in polyaniline by means of spin Seebeck experiments." Journal of Magnetism and Magnetic Materials 543 (February 2022): 168635. http://dx.doi.org/10.1016/j.jmmm.2021.168635.

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Arai, Shoma, Shingo Kaneta-Takada, Le Duc Anh, Masaaki Tanaka, and Shinobu Ohya. "Theoretical analysis of the inverse Edelstein effect at the LaAlO₃/SrTiO₃ interface with an effective tight-binding model: important role of the second d _xy subband." Applied Physics Express 15, no. 1 (January 1, 2022): 013005. http://dx.doi.org/10.35848/1882-0786/ac435c.

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Abstract The two-dimensional electron gas formed at interfaces between SrTiO3 and other materials has attracted much attention since extremely efficient spin-to-charge current conversion has been recently observed at these interfaces. This has been attributed to their complicated quantized multi-orbital structures with a topological feature. However, there are few reports quantitatively comparing the conversion efficiency values between experiments and theoretical calculations at these interfaces. In this study, we theoretically explain the experimental temperature dependence of the spin-to-charge current conversion efficiency using an 8 × 8 effective tight-binding model considering the second d xy subband, revealing the vital role of the quantization of the multi-band structure.

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Emoto, H., Y. Ando, E. Shikoh, Y. Fuseya, T. Shinjo, and M. Shiraishi. "Conversion of pure spin current to charge current in amorphous bismuth." Journal of Applied Physics 115, no. 17 (May 7, 2014): 17C507. http://dx.doi.org/10.1063/1.4863377.

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23

Sharma, Vinay, Rajeev Nepal, Weipeng Wu, E. A. Pogue, Ravinder Kumar, Rajeswari Kolagani, Lars Gundlach, M. Benjamin Jungfleisch, and Ramesh C. Budhani. "Comparing spin injection in Fe₇₅Co₂₅/Bi₂Te₃ at GHz and optical excitations." Applied Physics Letters 122, no. 7 (February 13, 2023): 072403. http://dx.doi.org/10.1063/5.0132617.

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Spin-to-charge conversion (S2CC) processes in thin-film heterostructures have attracted much attention in recent years. Here, we describe the S2CC in a 3D topological insulator Bi2Te3 interfaced with an epitaxial film of Fe75Co25. The quantification of spin-to-charge conversion is made with two complementary techniques: ferromagnetic resonance based inverse spin Hall effect (ISHE) at GHz frequencies and femtosecond light-pulse induced emission of terahertz (THz) radiation. The role of spin rectification due to extrinsic effects like anisotropic magnetoresistance (AMR) and planar Hall effects (PHE) is pronounced at the GHz timescale, whereas the THz measurements do not show any detectible signal, which could be attributed to AMR or PHE. This result may be due to (i) homodyne rectification at GHz, which is absent in THz measurements and (ii) laser-induced thermal spin current generation and magnetic dipole radiation in THz measurements, which is completely absent in GHz range. The converted charge current has been analyzed using the spin diffusion model for the ISHE. We note that regardless of the differences in timescales, the spin diffusion length in the two cases is comparable. Our results aid in understanding the role of spin pumping timescales in the generation of ISHE signals.

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Ulev, Georgy D., Gennady A. Ovsyannikov, Karen Y. Constantinian, Ivan E. Moscal, Anton V. Shadrin, and Peter V. Lega. "Generation and detection of spin current in iridate/manganite heterostructure." Radioelectronics. Nanosystems. Information Technologies. 15, no. 4 (December 6, 2023): 415–24. http://dx.doi.org/10.17725/rensit.2023.15.415.

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Kotel'nikov Institute of Radioengineering and Electronics of Russian Academy of Sciences The results of experimental studies on spin current at the interface of iridate/manganite heterostructure SrIrO3/La0.7Sr0.3MnO3 consisted of oxide epitaxial films with nanometer thickness are presented. A pure spin current was induced by microwave irradiation in GHz frequency band under conditions of ferromagnetic resonance. The spin current was detected due to inverse spin-Hall effect measuring the spectral characteristics of charge current arising on electrically conductive SrIrO3 film with strong spin-orbit interaction. The spin-Hall angle, which characterizes the efficiency of spin current conversion to the charge current, was determined by measurements of the angular dependences of spin magnetoresistance of the iridate/manganite interface.

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Seifert, Tom S., Liang Cheng, Zhengxing Wei, Tobias Kampfrath, and Jingbo Qi. "Spintronic sources of ultrashort terahertz electromagnetic pulses." Applied Physics Letters 120, no. 18 (May 2, 2022): 180401. http://dx.doi.org/10.1063/5.0080357.

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Spintronic terahertz emitters are broadband and efficient sources of terahertz radiation, which emerged at the intersection of ultrafast spintronics and terahertz photonics. They are based on efficient spin-current generation, spin-to-charge-current conversion, and current-to-field conversion at terahertz rates. In this Editorial, we review the recent developments and applications, the current understanding of the physical processes, and the future challenges and perspectives of broadband spintronic terahertz emitters.

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Kotlyar, V. V., A. G. Nalimov, A. A. Kovalev, A. P. Porfirev, and S. S. Stafeev. "Transfer of spin angular momentum to a dielectric particle." Computer Optics 44, no. 3 (June 2020): 333–42. http://dx.doi.org/10.18287/2412-6179-co-686.

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We show here that in the sharp focus of a linearly polarized laser beam the spin vector flux has only transverse components (the effect of photonic wheels or photonic helicopter). For a linearly polarized optical vortex, the orbit-spin conversion leads to the appearance of both longitudinal and transverse components of the spin density vector in the focus. Spin-orbit conversion is experimentally demonstrated for a circularly polarized Gaussian beam when a transverse energy flux (orbital angular momentum) arises in the focus, which is transmitted to a microparticle and makes it rotate. Switching the handedness of circular polarization (from left to right) switches the microparticle rotation direction. It is also shown here that an azimuthally polarized vortex beam with an arbitrary integer topological charge generates in the focus a spin density vector that only has an axial component (pure magnetization), while the transverse spin flux is absent.

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Guimarães, Marcos H. D., and Saroj P. Dash. "Disorder is not always bad for charge-to-spin conversion in WTe2." Matter 4, no. 5 (May 2021): 1440–41. http://dx.doi.org/10.1016/j.matt.2021.04.009.

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Gueckstock, Oliver, Lukáš Nádvorník, Martin Gradhand, Tom Sebastian Seifert, Genaro Bierhance, Reza Rouzegar, Martin Wolf, et al. "Terahertz Spin‐to‐Charge Conversion by Interfacial Skew Scattering in Metallic Bilayers." Advanced Materials 33, no. 9 (January 27, 2021): 2006281. http://dx.doi.org/10.1002/adma.202006281.

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Varotto, Sara, Luca Nessi, Stefano Cecchi, Jagoda Sławińska, Paul Noël, Simone Petrò, Federico Fagiani, et al. "Room-temperature ferroelectric switching of spin-to-charge conversion in germanium telluride." Nature Electronics 4, no. 10 (October 2021): 740–47. http://dx.doi.org/10.1038/s41928-021-00653-2.

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Varotto, Sara, Luca Nessi, Stefano Cecchi, Jagoda Sławińska, Paul Noël, Simone Petrò, Federico Fagiani, et al. "Room-temperature ferroelectric switching of spin-to-charge conversion in germanium telluride." Nature Electronics 4, no. 10 (October 2021): 740–47. http://dx.doi.org/10.1038/s41928-021-00653-2.

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Zhu, Dapeng, Yi Wang, Shuyuan Shi, Kie-Leong Teo, Yihong Wu, and Hyunsoo Yang. "Highly efficient charge-to-spin conversion from in situ Bi2Se3/Fe heterostructures." Applied Physics Letters 118, no. 6 (February 8, 2021): 062403. http://dx.doi.org/10.1063/5.0035768.

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Seibold, Götz, Sergio Caprara, Marco Grilli, and Roberto Raimondi. "On the Evaluation of the Spin Galvanic Effect in Lattice Models with Rashba Spin-Orbit Coupling." Condensed Matter 3, no. 3 (July 24, 2018): 22. http://dx.doi.org/10.3390/condmat3030022.

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The spin galvanic effect (SGE) describes the conversion of a non-equilibrium spin polarization into a charge current and has recently attracted renewed interest due to the large conversion efficiency observed in oxide interfaces. An important factor in the SGE theory is disorder which ensures the stationarity of the conversion. Through this paper, we propose a procedure for the evaluation of the SGE on disordered lattices which can also be readily implemented for multiband systems. We demonstrate the performance of the method for a single-band Rashba model and compare our results with those obtained within the self-consistent Born approximation for a continuum model.

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Hibino, Yuki, Tomohiro Taniguchi, Kay Yakushiji, Akio Fukushima, Hitoshi Kubota, and Shinji Yuasa. "Giant charge-to-spin conversion in ferromagnet via spin-orbit coupling." Nature Communications 12, no. 1 (October 29, 2021). http://dx.doi.org/10.1038/s41467-021-26445-y.

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AbstractConverting charge current into spin current via the spin Hall effect enables efficient manipulation of magnetization by electrical current. However, its geometrical restriction is a serious obstacle to device applications because it prevents switching of perpendicular magnetization in the absence of an external field. To resolve this issue, ferromagnetic materials have attracted attentions because their time reversal asymmetry induces magnetic-dependent charge-to-spin conversion that removes this restriction. Here, we achieved a large enhancement of magnetic-dependent charge-to-spin conversion by clarifying its mechanism. Through layer thickness dependence of the conversion efficiency, we revealed a coexistence of interfacial and bulk contributions to the magnetic-dependent charge-to-spin conversion. Moreover, the interfacial contribution to charge-to-spin conversion is found to be dominant and can be controlled via interfacial band engineering. The efficiency of charge-to-spin conversion in ferromagnet was found to be an order larger than that of other materials with reduced symmetry.

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Stano, Peter, and Philippe Jacquod. "Spin-to-Charge Conversion of Mesoscopic Spin Currents." Physical Review Letters 106, no. 20 (May 20, 2011). http://dx.doi.org/10.1103/physrevlett.106.206602.

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Ontoso, Nerea, C. K. Safeer, Josep Ingla-Aynés, Franz Herling, Luis E. Hueso, M. Reyes Calvo, and Fèlix Casanova. "Out-of-plane spin-to-charge conversion at low temperatures in graphene/MoTe2 heterostructures." Applied Physics Letters 123, no. 3 (July 17, 2023). http://dx.doi.org/10.1063/5.0154149.

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Multi-directional spin-to-charge conversion—in which spin polarizations with different orientations can be converted into a charge current in the same direction—has been demonstrated in low-symmetry materials and interfaces. This is possible because, in these systems, spin-to-charge conversion can occur in unconventional configurations in which charge current, spin current, and polarization do not need to be mutually orthogonal. Here, we explore, in the low temperature regime, the spin-to-charge conversion in heterostructures of graphene with the low-symmetry 1T' phase of MoTe2. First, we observe the emergence of charge conversion for out-of-plane spins at temperatures below 100 K. This unconventional component is allowed by the symmetries of both MoTe2 and graphene and likely arises from spin Hall effect in the spin–orbit proximitized graphene. Moreover, we examine the low-temperature evolution of non-local voltage signals arising from the charge conversion of the two in-plane spin polarizations, which have been previously observed at higher temperature. As a result, we report omni-directional spin-to-charge conversion—for all spin polarization orientations—in graphene/MoTe2 heterostructures at low temperatures.

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36

Liang, Hsia-Ling, T. C. Chuang, Danru Qu, C. C. Chiang, Ming-Hao Lee, Y. S. Chen, Jauyn Grace Lin, Ming-Wen Chu, C. L. Chien, and Ssu-Yen Huang. "Anisotropic spin-to-charge conversion in bismuth." Physical Review B 106, no. 20 (November 17, 2022). http://dx.doi.org/10.1103/physrevb.106.l201304.

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37

Gallego, Fernando, Felix Trier, Srijani Mallik, Julien Bréhin, Sara Varotto, Luis Moreno Vicente‐Arche, Tanay Gosavy, et al. "All‐Electrical Detection of the Spin‐Charge Conversion in Nanodevices Based on SrTiO₃ 2‐D Electron Gases." Advanced Functional Materials, October 17, 2023. http://dx.doi.org/10.1002/adfm.202307474.

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AbstractThe Magnetoelectric Spin‐Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin‐orbit (SO) element for information read‐out through spin‐charge conversion. Among candidate SO materials to achieve a large MESO output signal, oxide Rashba two‐dimensional electron gases (2DEGs) have shown very large spin‐charge conversion efficiencies, albeit mostly in spin‐pumping experiments. Here, all‐electrical spin‐injection and spin‐charge conversion experiments in nanoscale devices harnessing the inverse Edelstein effect of SrTiO3 2DEGs are reported. Nanodevices aredesigned, patterned, and fabricated in which a spin current injected from a cobalt layer into the 2DEG is converted into a charge current. The spin‐charge conversion signal is optimized by applying back‐gate voltages and studied its temperature evolution. It further disentangles the inverse Edelstein contribution from spurious effects such as the planar Hall effect, the anomalous Hall effect, or the anisotropic magnetoresistance. The combination of non‐volatility and high energy efficiency of these devices can potentially lead to new technology paradigms for beyond‐CMOS computing architectures.

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38

Kim, Sumin, Hyun‐Woo Lee, and Gyung‐Min Choi. "Giant Spin‐Orbit Torque in Sputter‐Deposited Bi Films." Advanced Science, September 7, 2023. http://dx.doi.org/10.1002/advs.202303831.

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AbstractBismuth (Bi) has the strongest spin‐orbit coupling among non‐radioactive elements and is thus a promising material for efficient charge‐to‐spin conversion. However, previous electrical detections have reported controversial results for the conversion efficiency. In this study, an optical detection of a spin‐orbit torque is reported in a Bi/CoFeB bilayer with a polycrystalline texture of (012) and (003). Taking advantage of the optical detection, spin‐orbit torque is accurately separated from the Oersted field and achieves a giant damping‐like torque efficiency of +0.5, verifying efficient charge‐to‐spin conversion. This study also demonstrates a field‐like torque efficiency of −0.1. For the mechanism of the charge‐to‐spin conversion, the bulk spin Hall effect and the interface Rashba‐Edelstein effect are considered.

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39

Pawłowski, J., G. Skowron, M. Górski, and S. Bednarek. "All-electric single-electron spin-to-charge conversion." Physical Review B 98, no. 12 (September 17, 2018). http://dx.doi.org/10.1103/physrevb.98.125411.

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40

Stano, Peter, Jaroslav Fabian, and Philippe Jacquod. "Nonlinear spin to charge conversion in mesoscopic structures." Physical Review B 85, no. 24 (June 1, 2012). http://dx.doi.org/10.1103/physrevb.85.241301.

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41

Zhang, Steven S. L., Anton A. Burkov, Ivar Martin, and Olle G. Heinonen. "Spin-to-Charge Conversion in Magnetic Weyl Semimetals." Physical Review Letters 123, no. 18 (October 30, 2019). http://dx.doi.org/10.1103/physrevlett.123.187201.

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42

Binda, Federico, Stefano Fedel, Santos Francisco Alvarado, Paul Noël, and Pietro Gambardella. "Spin‐Orbit Torques and Spin Hall Magnetoresistance Generated by Twin‐Free and Amorphous Bi_0.9Sb_0.1 Topological Insulator Films." Advanced Materials, August 11, 2023. http://dx.doi.org/10.1002/adma.202304905.

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AbstractTopological insulators have attracted great interest as generators of spin‐orbit torques (SOTs) in spintronic devices. Bi1 − xSbx is a prominent topological insulator that has a high charge‐to‐spin conversion efficiency. However, the origin and magnitude of the SOTs induced by current‐injection in Bi1 − xSbx remain controversial. Here we report the investigation of the SOTs and spin Hall magnetoresistance resulting from charge‐to‐spin conversion in twin‐free epitaxial layers of Bi0.9Sb0.1(0001) coupled to FeCo, and compare it with that of amorphous Bi0.9Sb0.1. We find a large charge‐to‐spin conversion efficiency of 1 in the first case and less than 0.1 in the second, confirming crystalline Bi0.9Sb0.1 as a strong spin injector material. The SOTs and spin Hall magnetoresistance are independent of the direction of the electric current, indicating that charge‐to‐spin conversion in single‐crystal Bi0.9Sb0.1(0001) is isotropic despite the strong anisotropy of the topological surface states. Further, we find that the damping‐like SOT has a non‐monotonic temperature dependence with a minimum at 20 K. By correlating the SOT with resistivity and weak antilocalization measurements, we conclude that charge‐spin conversion occurs via thermally‐excited holes from the bulk states above 20 K, and conduction through the isotropic surface states with increasing spin polarization due to decreasing electron‐electron scattering below 20 K.This article is protected by copyright. All rights reserved

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43

Zhao, Yunxiu, Anabil Gayen, Lin Huang, Xiao You, Nguyen Le Thi, Qoimatul Mustaghfiroh, Fathiya Rahmani, et al. "Quantifying Spin‐Charge Conversion Mechanisms for THz Emission in Magnetic Multilayers." Advanced Optical Materials, April 9, 2024. http://dx.doi.org/10.1002/adom.202302571.

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AbstractUltrafast control of both electric and spin currents triggered by femtosecond laser pulse has attracted much attention due to future applications for broadband THz emitter as well as high‐speed spintronic devices. Optically generated spin current is converted to charge current via multiple spin‐charge conversion mechanisms, generating THz wave emission in magnetic multilayers. However, to date, quantitative and comparative investigation of THz emission originating from spin‐charge conversion mechanisms has not yet been fully explored. Here, direct and straightforward nondestructive probing to measure THz emission is provided at original Co/Pt and Co/Ta interfaces embedded in Pt/Co/Ta multilayers with polarization analysis of both optical pump and THz emission. These results allow a fundamental understanding of various spin‐charge conversion phenomena, which is a key basis for future spintronic THz source development.

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44

Kaneta-Takada, Shingo, Miho Kitamura, Shoma Arai, Takuma Arai, Ryo Okano, Le Duc Anh, Tatsuro Endo, et al. "Giant spin-to-charge conversion at an all-epitaxial single-crystal-oxide Rashba interface with a strongly correlated metal interlayer." Nature Communications 13, no. 1 (September 26, 2022). http://dx.doi.org/10.1038/s41467-022-33350-5.

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AbstractThe two-dimensional electron gas (2DEG) formed at interfaces between SrTiO3 (STO) and other oxide insulating layers is promising for use in efficient spin-charge conversion due to the large Rashba spin-orbit interaction (RSOI). However, these insulating layers on STO prevent the propagation of a spin current injected from an adjacent ferromagnetic layer. Moreover, the mechanism of the spin-current flow in these insulating layers is still unexplored. Here, using a strongly correlated polar-metal LaTiO3+δ (LTO) interlayer and the 2DEG formed at the LTO/STO interface in an all-epitaxial heterostructure, we demonstrate giant spin-to-charge current conversion efficiencies, up to ~190 nm, using spin-pumping ferromagnetic-resonance voltage measurements. This value is the highest among those reported for all materials, including spin Hall systems. Our results suggest that the strong on-site Coulomb repulsion in LTO and the giant RSOI of LTO/STO may be the key to efficient spin-charge conversion with suppressed spin-flip scattering. Our findings highlight the hidden inherent possibilities of oxide interfaces for spin-orbitronics applications.

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45

Zheng, Dongyao, Hui Zhang, Feng-Xia Hu, Baogen Shen, Jirong Sun, and Weisheng Zhao. "Spin-charge interconversion of two-dimensional electron gases at oxide interfaces." Nanotechnology, November 17, 2023. http://dx.doi.org/10.1088/1361-6528/ad0dca.

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Abstract Oxide two-dimensional electron gas (2DEG) is a low-dimensional carrier system formed at the interface of oxide heterojunctions with strong and tunable Rashba spin-orbit coupling (SOC) which makes oxide 2DEG an ideal platform for converting spin current and charge current. This review provides a summary of the recent advances on the 2DEGs at oxide interfaces for spin-charge interconversion. On one hand, we analyze novel properties and the efficiency of the spin-to-charge conversion through different ways of spin current injection. On the other hand, the conversion of charge current to spin current under different experimental methods has been summarized. These research achievements provide perspectives and methods for understanding and regulating the spin-charge interconversion of the 2DEG at the oxide interface.

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yang, xia, Rui Yu, jiefeng cao, zhipeng long, junqin li, and yong wang. "Spin-to-Charge Conversion in Tantalum with Structural Phase Transition." Physica Scripta, August 16, 2023. http://dx.doi.org/10.1088/1402-4896/acf0fc.

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Abstract Tantalum (Ta), which is widely used as a spin sink material, especially for its -phase with strong spin-orbit coupling (SOC) exhibits a high spin-charge interconversion efficiency. In this work, we investigate the spin-to-charge conversion (SCC) process of Ta/Permalloy (Ta/Py) bilayers with Ta having different crystalline phases. The structural phase transition of Ta film from tetragonal to body-centered cuboidal (BCC) which corresponds to - and -phases was obtained via high-temperature annealing in vacuum atmosphere. By applying ferromagnetic resonance (FMR) and inverse spin Hall effect (ISHE) measurements, the measured spin mixing conductance and SCC DC voltage show a strong correlation with the crystalline phase of Ta thin films in Ta/Py bilayers. A significant enhancement of spin mixing conductance in (+)-Ta/Py has been found and a higher SCC DC voltage was detected for -phase Ta film with a weak SOC than -phase Ta film with a strong SOC. These results reveal the significant role of the interfacial constitution in heavy metal/ferromagnet bilayers for spin current transportation, which can promote the development of high-efficiency spin-based devices through interfacial engineering.

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Cheng, Hao, Yangkai Wang, Zheng Liu, Xiangyu Jia, Qiuping Huang, and Yalin Lu. "Terahertz spin-to-charge conversion in ferromagnetic Ni nanofilms." Nanophotonics, May 11, 2023. http://dx.doi.org/10.1515/nanoph-2023-0089.

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Abstract Spintronic terahertz (THz) emission via spin-to-charge conversion (SCC) has been widely studied in ferromagnets (FM)/nonmagnets (NM) structures, in which various mechanisms of SCC have been confirmed in different NM materials. However, it is rare to find a material having multiple SCC mechanisms at the same time. Here, we report a ferromagnetic metal Ni film with diverse functions in the SCC process, by performing THz emission experiments in single Ni layer, FM/Ni, Ni/NM bilayers and FM/Ni/NM trilayers. It is demonstrated that in Ni monolayer, THz emission is radiated by the anomalous Hall effect and ultrafast demagnetization of Ni film. In FM/Ni, the Ni film acts as an SCC implementer and THz emission is mainly generated by the inverse spin Hall effect (ISHE) of Ni. In Ni/NM, the Ni film acts as a spin injector and provides spin currents to be converted to charge current via ISHE of heavy metal NM, inducing THz emission. In FM/Ni/NM, THz emission mainly comes from ISHE of FM/Ni, Ni/NM, and FM/NM, and their domination is relative to Ni thickness. Our findings show a ferromagnetic film not only acts as a spin injector but also as an SCC implementer, providing a new concept to design spintronic THz emitters.

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48

Jafari, Homayoun, Arunesh Roy, and Jagoda Sławińska. "Ferroelectric control of charge-to-spin conversion in WTe2." Physical Review Materials 6, no. 9 (September 23, 2022). http://dx.doi.org/10.1103/physrevmaterials.6.l091404.

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Hanlon, Liam, Lachlan Oberg, YunHeng Chen, and Marcus W. Doherty. "Spin-to-Charge Conversion with Electrode Confinement in Diamond." Physical Review Applied 16, no. 6 (December 21, 2021). http://dx.doi.org/10.1103/physrevapplied.16.064050.

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50

Shen, Jinhui, Zheng Feng, Pengchao Xu, Dazhi Hou, Yang Gao, and Xiaofeng Jin. "Spin-to-Charge Conversion in Ag/Bi Bilayer Revisited." Physical Review Letters 126, no. 19 (May 12, 2021). http://dx.doi.org/10.1103/physrevlett.126.197201.

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Journal articles on the topic 'Charge-to-Spin conversion'

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