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Journal articles on the topic 'Chalcogenide alloys'

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Author: Grafiati

Published: 6 September 2023

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1

Rocca, J. A., M. A. Ureña, and M. R. Fontana. "MASTER CURVE FOR CRYSTALLIZATION OF SB70TE30AMORPHOUS ALLOYS." Anales AFA 34, no. 1 (March 28, 2023): 22–26. http://dx.doi.org/10.31527/analesafa.2023.34.1.22.

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One of the possible uses of chalcogenide glasses is their application in phase change memory devices. The operation of these non-volatile memories is based on the use of an alloy with chalcogenide elements as a sensitive material, taking advantage of the great contrast in electrical resistance between the amorphous and crystalline states. The Sb70Te30(atomic percentage) alloy stands out among the chalcogenide materials with these properties. On the other hand, the knowledge of the microscopic mechanisms of the amorphous alloys crystallization allows microstructural control to optimize properties. At this point, differential scanning calorimetry (DSC) has been widely used for the determination of the thermal stability of amorphous alloys. Previously we have started the study of the crystallization kinetics ofSb70Te30amorphous alloys. In this work, a procedure based on the so-called isokinetic hypothesis has been applied to carry out the kinetic analysis of the calorimetric data of continuous heating. In particular, the so-called master curve of the crystallization kinetics of this alloy is determined.

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2

Li, Shan, Xiaofang Li, Zhifeng Ren, and Qian Zhang. "Recent progress towards high performance of tin chalcogenide thermoelectric materials." Journal of Materials Chemistry A 6, no. 6 (2018): 2432–48. http://dx.doi.org/10.1039/c7ta09941j.

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This review summarizes the recent advances in tin chalcogenide (SnTe, SnSe, and SnS) bulk alloys, provides the possible directions for further improving the thermoelectric properties and elucidates the challenges for optimization and application of tin chalcogenides.

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3

Hegde, Ganesh Shridhar, and A. N. Prabhu. "A Review on Doped/Composite Bismuth Chalcogenide Compounds for Thermoelectric Device Applications: Various Synthesis Techniques and Challenges." Journal of Electronic Materials 51, no. 5 (March 14, 2022): 2014–42. http://dx.doi.org/10.1007/s11664-022-09513-x.

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AbstractOne of the global demands of primary research objectives is to achieve human energy harvesting and self-powered wearable technologies. Bismuth chalcogenides are the trending materials for thermoelectric generators and Peltier coolers due to their notable thermoelectric figure of merit in the low- and room-temperature range. Systematic alloying of bismuth chalcogenides leads to a substantial change in their electrical and thermal transport properties. The high thermoelectric figure of merit (ZT) observed in bismuth chalcogenides is due to the rhombohedral crystal structure, lower effective mass, low thermal conductivity, and large band degeneracy. This review is aimed at identifying and quantifying different techniques for effectively improving the thermoelectric properties of doped/composite bismuth chalcogenide compounds. The review also examines the various synthesis methods including ball milling (BM), spark plasma sintering (SPS), self-propagating high-temperature synthesis (SHS), soft chemical reaction, hydrothermal reaction, melt growth (MG), melt spinning (MS), sintering and consolidated synthesis, and hot extrusion, with their respective figures of merit. Since device modification is a challenging task, this report reviews the present research on bismuth chalcogenide alloys to benchmark future development using various techniques. Graphical Abstract

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4

Kokkonis, P. A., and V. Leute. "Ternary Diffusion Effects in Chalcogenide Alloys." Defect and Diffusion Forum 143-147 (January 1997): 1159–66. http://dx.doi.org/10.4028/www.scientific.net/ddf.143-147.1159.

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5

Yang, C. Y., D. E. Sayers, and M. A. Paesler. "Structural changes in amorphous chalcogenide alloys." Physica B: Condensed Matter 158, no. 1-3 (June 1989): 69–70. http://dx.doi.org/10.1016/0921-4526(89)90202-0.

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6

Ivanova, L. D., I. Yu Nikhezina, Yu V. Granatkina, V. A. Dudarev, S. A. Kichik, and A. A. Mel’nikov. "Thermoelements from antimony- and bismuth-chalcogenide alloys." Semiconductors 51, no. 8 (August 2017): 986–88. http://dx.doi.org/10.1134/s1063782617080140.

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7

Bernard, James E., and Alex Zunger. "Optical bowing in zinc chalcogenide semiconductor alloys." Physical Review B 34, no. 8 (October 15, 1986): 5992–95. http://dx.doi.org/10.1103/physrevb.34.5992.

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8

Slimani, M., H. Meradji, C. Sifi, S. Labidi, S. Ghemid, E. B. Hannech, and F. El Haj Hassan. "Ab initio investigations of calcium chalcogenide alloys." Journal of Alloys and Compounds 485, no. 1-2 (October 2009): 642–47. http://dx.doi.org/10.1016/j.jallcom.2009.06.104.

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9

Saiter, Jean-Marc, Thierry Derrey, and Claude Vautier. "Coordinance of bismuth in amorphous chalcogenide alloys." Journal of Non-Crystalline Solids 77-78 (December 1985): 1169–72. http://dx.doi.org/10.1016/0022-3093(85)90867-1.

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10

Bokova, Maria, Steven Dumortier, Christophe Poupin, Renaud Cousin, Mohammad Kassem, and Eugene Bychkov. "Potentiometric Chemical Sensors Based on Metal Halide Doped Chalcogenide Glasses for Sodium Detection." Sensors 22, no. 24 (December 18, 2022): 9986. http://dx.doi.org/10.3390/s22249986.

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Chalcogenide glasses are widely used as sensitive membranes in the chemical sensors for heavy metal ions detection. The lack of research work on sodium ion-selective electrodes (Na+-ISEs) based on chalcogenide glasses is due to the high hygroscopicity of alkali dopes chalcogenides. However, sodium halide doped Ga2S3-GeS2 glasses are more chemically stable in water and could be used as Na+-sensitive membranes for the ISEs. In this work we have studied the physico-chemical properties of mixed cation (AgI)x(NaI)30-x(Ga2S3)26(GeS2)44 chalcogenide glasses (where x = 0, 7.5, 15, 22.5 and 30 mol.% AgI) using density, DSC, and conductivity measurements. The mixed cation effect with shallow conductivity and glass transition temperature minimum was found for silver fraction r = Ag/(Na + Ag) ≈ 0.5. Silver addition decreases the moisture resistance of the glasses. Only (AgI)22.5(NaI)7.5(Ga2S3)26(GeS2)44 composition was suitable for chemical sensors application, contrary to the single cation sodium halide doped Ga2S3-GeS2 glasses, where 15 mol.% sodium-halide-containing vitreous alloys are stable in water solutions. The analytical parameters of (NaCl)15(Ga2S3)23(GeS2)62; (NaI)15(Ga2S3)23(GeS2)62 and (AgI)22.5(NaI)7.5(Ga2S3)26(GeS2)44 glass compositions as active membranes in Na+-ISEs were investigated, including detection limit, sensitivity, linearity, ionic selectivity (in the presence of K+, Mg2+, Ca2+, Ba2+, and Zn2+ interfering cations), reproducibility and optimal pH-range.

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11

Kim, Myoungsub, Youngjun Kim, Minkyu Lee, Seok Man Hong, Hyung Keun Kim, Sijung Yoo, Taehoon Kim, Seung-min Chung, Taeyoon Lee, and Hyungjun Kim. "PE-ALD of Ge1−xSx amorphous chalcogenide alloys for OTS applications." Journal of Materials Chemistry C 9, no. 18 (2021): 6006–13. http://dx.doi.org/10.1039/d1tc00650a.

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Three-dimensional (3D) cross-point (X-point) technology, including amorphous chalcogenide-based ovonic threshold switching (OTS) selectors, is bringing new changes to the memory hierarchy for high-performance computing systems.

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12

Badesha, Santokh S., George T. Fekete, and Ihor Tarnawskyj. "Effect of reaction temperature on the average crystallite size of SexTe1−x alloys." Journal of Materials Research 1, no. 2 (April 1986): 234–36. http://dx.doi.org/10.1557/jmr.1986.0234.

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Electrophotographic properties of chalcogenide materials are readily influenced by altering their composition and/or structure. Dark decay and cycle down of photoreceptors utilizing small particle generators are both directly proportional to average crystallite size (ACS). This paper describes a novel chemical method to control the ACS of Se, Te, and Sex Te1−x alloys. These chalcogenide materials are prepared as powders by the reduction or coreduction of SeIV and/or TeIV intermediates with hydrazine, in organic media. To control the ACS of precipitated chalcogens the reaction is carried out at the desired temperature. X-ray diffraction measurements are used to determine the ACS, homogeneity, and phase of these precipitated powders.

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13

JIN, Yeongrok, and Jaekwang LEE*. "Study of Two-dimensional Transition Metal Chalcogenide Alloys." New Physics: Sae Mulli 71, no. 3 (March 31, 2021): 225–29. http://dx.doi.org/10.3938/npsm.71.225.

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14

Singhal, Dhruv, Jessy Paterson, Meriam Ben-Khedim, Dimitri Tainoff, Laurent Cagnon, Jacques Richard, Emigdio Chavez-Angel, et al. "Nanowire forest of pnictogen–chalcogenide alloys for thermoelectricity." Nanoscale 11, no. 28 (2019): 13423–30. http://dx.doi.org/10.1039/c9nr01566c.

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15

Su, P., R. Pujari, V. Boodhoo, S. Aggarwal, P. Bhattacharya, O. Maksimov, K. Wada, et al. "Ternary Lead Chalcogenide Alloys for Mid-Infrared Detectors." Journal of Electronic Materials 49, no. 8 (April 9, 2020): 4577–80. http://dx.doi.org/10.1007/s11664-020-08114-w.

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16

Drablia, S., H. Meradji, S. Ghemid, G. Nouet, and F. El Haj Hassan. "First principles investigation of barium chalcogenide ternary alloys." Computational Materials Science 46, no. 2 (August 2009): 376–82. http://dx.doi.org/10.1016/j.commatsci.2009.03.013.

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17

Adam, A. M., P. Petkov, M. Ataalla, Haifa Alqannas, Bandar Alruqi, and Abeer Altowyan. "Structure, thermal and physic-chemical properties of some chalcogenide alloys." Thermal Science, no. 00 (2022): 195. http://dx.doi.org/10.2298/tsci221001195a.

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Bulk products of crystalline Bi2Se3-xTex alloys (x =0.0, 0.1, 0.3, 0.5) were prepared using simple melting synthesis. Crystalline features, microstructure and surface morphologies of the synthesized samples were examined via x-ray diffraction (XRD), scanning electron microscope (SEM) and energy dispersive x-ray spectrometer. Elemental distribution was studied by energy dispersive analysis of X-ray (EDAX) spectroscopy. Polycrystalline of rhombohedral crystal structure was observed for the concerned samples. Perfect crystallinity and micro-scalability of the prepared were also reflected by the physic-chemical properties of each sample. Thermal behavior was studied throughout differential scanning calorimetry and thermogravimetric analysis showing that the samples are of high stability over high temperature range. Physic-chemical properties were determined in terms of experimental density. These properties were compactness value, molar volume and the percentage of free volume. Density of Bi2Se3 alloy was obtained at 7.37 gm/cm3. Te doping enhanced the density of the Bi2Se3-xTex system. The most Te doped alloy showed density of 9.018 gm/cm3. All other physic-chemical properties showed strong dependence on the Tea amounts in the system.

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18

Cen, Jiayi, Ioanna Pallikara, and Jonathan M. Skelton. "Structural Dynamics and Thermal Transport in Bismuth Chalcogenide Alloys." Chemistry of Materials 33, no. 21 (October 19, 2021): 8404–17. http://dx.doi.org/10.1021/acs.chemmater.1c02777.

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19

Abdel-Rahim, M. A., A. Gaber, A. A. Abu-Sehly, and N. M. Abdelazim. "Crystallization study of Sn additive Se–Te chalcogenide alloys." Thermochimica Acta 566 (August 2013): 274–80. http://dx.doi.org/10.1016/j.tca.2013.06.009.

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20

Yu, Wanhua, and C. D. Wright. "Analysis of switching conditions of chalcogenide alloys during crystallization." Journal of University of Science and Technology Beijing, Mineral, Metallurgy, Material 13, no. 5 (October 2006): 446–49. http://dx.doi.org/10.1016/s1005-8850(06)60090-x.

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21

Patial, Balbir Singh, Nagesh Thakur, and S. K. Tripathi. "Crystallization study of Sn additive Se–Te chalcogenide alloys." Journal of Thermal Analysis and Calorimetry 106, no. 3 (May 1, 2011): 845–52. http://dx.doi.org/10.1007/s10973-011-1579-5.

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22

Piccinotti, Davide, Behrad Gholipour, Jin Yao, Kevin F. MacDonald, Brian E. Hayden, and Nikolay I. Zheludev. "Stoichiometric Engineering of Chalcogenide Semiconductor Alloys for Nanophotonic Applications." Advanced Materials 31, no. 14 (February 17, 2019): 1807083. http://dx.doi.org/10.1002/adma.201807083.

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23

Kumari, Vandana, Anusaiya Kaswan, Dinesh Patidar, Narendra Saxena, and Kananbala Sharma. "I-V measurements of Ge-Se-Sn chalcogenide glassy alloys." Processing and Application of Ceramics 9, no. 1 (2015): 61–66. http://dx.doi.org/10.2298/pac1501061k.

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Current-voltage characteristics and DC electrical conductivity were studied for Ge30-xSe70Snx (x = 8, 11, 14, 17 and 20) glassy thin pellets of diameter 12mm and thickness 1mm prepared under a constant load of 5 tons using a well-known melt quenching technique in bulk as a function of composition. The I-V characteristics were recorded at room temperature as well as elevated temperatures up to 300?C. The experimental data suggests that glass containing 20 at.% of Sn has the minimum resistance allowing maximum current through the sample as compared to other counterparts of the series. Therefore, DC conductivity is found to increase with increasing Sn concentration. Composition dependence of DC conductivity is discussed in terms of the bonding between Se and Sn. Plots between ln I and V1/2 provide linear relationship for both low and high voltage range. These results have been explained through the Pool-Frenkel mechanism. The I-V characteristics show ohmic behaviour in the low voltage range and this behaviour turns to non-ohmic from ohmic in the higher voltage range due to voltage induced temperature effects.

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24

El Haj Hassan, F., and B. Amrani. "Structural, electronic and thermodynamic properties of magnesium chalcogenide ternary alloys." Journal of Physics: Condensed Matter 19, no. 38 (September 4, 2007): 386234. http://dx.doi.org/10.1088/0953-8984/19/38/386234.

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25

Sharma, P. A., M. Brumbach, D. P. Adams, J. F. Ihlefeld, A. L. Lima-Sharma, S. Chou, J. D. Sugar, P. Lu, J. R. Michael, and D. Ingersoll. "Electrical contact uniformity and surface oxidation of ternary chalcogenide alloys." AIP Advances 9, no. 1 (January 2019): 015125. http://dx.doi.org/10.1063/1.5081818.

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26

Souadkia, M., B. Bennecer, and F. Kalarasse. "Elastic and lattice dynamical properties of ternary strontium chalcogenide alloys." Materials Science in Semiconductor Processing 26 (October 2014): 267–75. http://dx.doi.org/10.1016/j.mssp.2014.05.009.

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27

Sharma, Neha, Sunanda Sharda, Vineet Sharma, and Pankaj Sharma. "Thermal analysis of quaternary Ge–Se–Sb–Te chalcogenide alloys." Journal of Thermal Analysis and Calorimetry 119, no. 1 (September 12, 2014): 213–18. http://dx.doi.org/10.1007/s10973-014-4138-z.

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28

Benmore, Chris J., and Philip S. Salmon. "Structure of Fast Ion Conducting and Semiconducting Glassy Chalcogenide Alloys." Physical Review Letters 73, no. 2 (July 11, 1994): 264–67. http://dx.doi.org/10.1103/physrevlett.73.264.

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29

Singh, Abhay Kumar. "Amorphous and nanophase microstructures of bulk Se-based chalcogenide alloys." Optoelectronics Letters 8, no. 3 (May 2012): 165–67. http://dx.doi.org/10.1007/s11801-012-2010-6.

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30

Singh, Abhay Kumar. "Crystallization kinetics of Se–Zn–Sb nano composites chalcogenide alloys." Journal of Alloys and Compounds 552 (March 2013): 166–72. http://dx.doi.org/10.1016/j.jallcom.2012.10.109.

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31

Kolobov, Alexander V., Paul Fons, and Junji Tominaga. "Athermal amorphization of crystallized chalcogenide glasses and phase-change alloys." physica status solidi (b) 251, no. 7 (December 19, 2013): 1297–308. http://dx.doi.org/10.1002/pssb.201350146.

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32

Egorova, Alena Yu, and Elena S. Lomakina. "Application of the Method of X-Ray Fluorescence Analysis to Determine the Composition of Glassy and Crystalline Alloys of the Systems As_xS_1-xand As_xSe_1-x." Key Engineering Materials 836 (March 2020): 97–103. http://dx.doi.org/10.4028/www.scientific.net/kem.836.97.

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The article presents an X-ray fluorescence analysis of chalcogenide glassy semiconductors. The standard method is applied to determine the concentration of arsenic, selenium, and sulfur in alloys. This technique, the quantitative composition of the glasses is defined with an accuracy of ± 0.0002.

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33

Kaur, Prabhjot, and Chandan Bera. "Effect of alloying on thermal conductivity and thermoelectric properties of CoAsS and CoSbS." Physical Chemistry Chemical Physics 19, no. 36 (2017): 24928–33. http://dx.doi.org/10.1039/c7cp05170k.

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A fundamental understanding of the rational design of “Pb” and “Te” free metal chalcogenide alloys, based on the abundant materials CoAs_xSb_(1−x)S, for both p-type and n-type highly efficient thermoelectric materials is explored.

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34

Singh, Abhay Kumar, and Tien-Chien Jen. "A Roadmap for the Chalcogenide-graphene Composites Formation Under a Glassy Regime." Current Graphene Science 3, no. 1 (December 28, 2020): 49–55. http://dx.doi.org/10.2174/2452273204999200918154642.

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Background: Nano-composite is an innovative material having nano in which fillers dispersed in a matrix. Typ-ically, the structure is a matrix- filler combination, where the fillers like particles, fibers, or fragments are surrounded and bound together as discrete units by the matrix. The term nano-composite encompasses a wide range of materials right from three dimensional metal matrix composites to two dimensional lamellar composites. Therefore, the physical, chemical and biological properties of nano materials differ from the properties of individual atoms and molecules or bulk matter. The chalcogenide – graphene composites in glassy regime is the growing novel research topic in the area of composite material science. It is obvious to interpret such materials different physicochemical mechanism. Objective: The key objective of this research work to explore the internal physicochemical mechanism of the chalcogenide – graphene composites under the glassy regime. Including the prime chalcogen alloying element selenium amorphous atomic structure and their fullerene like bonding nature. By accommodating the essential properties of the stacked layers of bilayer graphene. The diffusion, compression and dispersion of the bilayer graphene in selenium rich ternary (X(1-x-y)-Y(x)- Z(y) + GF (bilayer graphene); X = Se, Y = Semimetal or metalloid, Z = None metal) alloys under the complex regime on and after thermal melting process are addressed. Materials and Methods: To synthesize the composite materials the well-known melt quenched method had adopted. More-over, to interpret the amorphous selenium (Se8) chains and rings molecular structures we had used vista software with an available CIF data file. While to show the armchair and zig-zag bonds with bilayer graphene structure the nanotube modeler simulation software has used. Results: Outcomes of this study reveals the chalcogenide -graphene nano composite formation under a glassy regime changes the individual materials structural and other physical properties that is reflecting in different experimental evi-dences, therefore, the modified theoretical concepts for the different properties of such composite materials are interpreted in this study. Discussion: The dispersion and diffusion of the high stiff graphene bonds in low dimension chalcogen rich alloys has been interpreted based on their quadric thermal expansion behaviour. In addition to this, a possible bond angle modification in the formation of X(1-x-y)-Y(x)- Z(y) + GF composites are also addressed. To interpret the distinct optical property behavior of the formed X(1-x-y)-Y(x)- Z(y) + GF composites and parent chalcogenide glassy alloys a schematic model of the energy levels is also addressed. Conclusion: To make a better understating on the formation mechanism such composites, the diffusion and deformation of high stiff graphene σ and π bonds in a low dimension chalcogenide alloy basic mechanism are discussed on basis of novel “thermonic energy tunneling effect” concept, which could result in quadratic thermal expansion of graphene. Moreover, the structural unit modifications of such composite materials are described in terms of their bond angle modifications and in-fluence of the coordination defects. The energy levels suppression and creation of addition sub energy levels in such com-posite materials are discussed by adopting the viewpoint impact of the foreign alloying elements and surface π-plasmonic resonance between the graphene layers in the honeycomb band structure. Thus, this study has described various basic aspects of the chalcogenide system – bilayer graphene composites formation under a glassy regime.

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35

Kakinuma, F., and Kenji Suzuki. "A Thermodynamic Study of Metal - Nonmetal Transition in Chalcogenide Liquid Alloys." International Journal of Materials Research 84, no. 8 (August 1, 1993): 534–40. http://dx.doi.org/10.1515/ijmr-1993-840804.

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36

Reifenberger, R., and J. Kossut. "Band structure and electronic properties of mercury chalcogenide alloys containing iron." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 5, no. 5 (September 1987): 2995–3002. http://dx.doi.org/10.1116/1.574246.

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37

Morales-Sánchez, E., E. Prokhorov, J. González-Hernández, Yu Vorobiev, J. Horta Rangel, and S. Kostylev. "Effects of contacts on the electrical characterization of amorphous chalcogenide alloys." Vacuum 70, no. 4 (April 2003): 483–92. http://dx.doi.org/10.1016/s0042-207x(02)00536-5.

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38

Kolobov, Alexander V., Paul Fons, Milos Krbal, and Junji Tominaga. "Athermal component of amorphisation in phase-change alloys and chalcogenide glasses." Journal of Non-Crystalline Solids 358, no. 17 (September 2012): 2398–401. http://dx.doi.org/10.1016/j.jnoncrysol.2011.10.024.

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39

Рыжов, В. А., Б. Т. Мелех, and Л. П. Казакова. "Оптические свойства фазопеременных материалов системы германий--сурьма-теллур составов Ge-=SUB=-14-=/SUB=-Sb-=SUB=-29-=/SUB=-Te-=SUB=-57-=/SUB=- и Ge-=SUB=-15-=/SUB=-Sb-=SUB=-15-=/SUB=-Te-=SUB=-70-=/SUB=- в дальнем инфракрасном диапазоне." Физика и техника полупроводников 55, no. 7 (2021): 542. http://dx.doi.org/10.21883/ftp.2021.07.51013.9639.

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Abstract Infrared absorption spectra of chalcogenide alloys of the GST system with the compositions Ge14Sb29Te57 and Ge15Sb15Te70 in the amorphous and crystalline state were measured and analyzed in the range of 20 – 400 cm– 1 (0.6 – 12 THz) at room temperature. Absorption at these frequencies is due to the manifestation of correlated torsional vibrations of structural units of the amorphous alloy and phonon modes of the crystal. The performed assignment of absorption bands and the revealed differences in the IR spectra make it possible to more confidently represent the possible molecular mechanism of reversible amorphous-crystalline transformations in the studied phase-changing materials

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40

Lobana, Tarlok S., and Randhir Singh. "Dihalodicarbonylruthenium(II)-bis(tertiaryphosphine chalcogenide) complexes." Transition Metal Chemistry 20, no. 5 (October 1995): 501–2. http://dx.doi.org/10.1007/bf00141526.

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41

Golovchak, R. Ya, S. A. Kozyukhin, A. Kozdras, O. I. Shpotyuk, and V. M. Novotortsev. "Physical aging of chalcogenide glasses." Inorganic Materials 46, no. 8 (August 2010): 911–13. http://dx.doi.org/10.1134/s0020168510080200.

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42

Koštál, Petr, Jana Shánělová, and Jiří Málek. "Viscosity of chalcogenide glass-formers." International Materials Reviews 65, no. 2 (January 9, 2019): 63–101. http://dx.doi.org/10.1080/09506608.2018.1564545.

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43

Dahshan, Alaa, Horesh Kumar, and Neeraj Mehta. "Role of some modifiers on the thermo-mechanical properties of Se90In10 chalcogenide glass (ChGs)." European Physical Journal Applied Physics 94, no. 3 (June 2021): 31101. http://dx.doi.org/10.1051/epjap/2021210044.

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The studies on the micro-hardness of ChGs provide useful information regarding their straightforward involvement in the fabrication of sensors, fibers, and other optical elements for direct use in infrared optics. This work deals with the mechanical response of the glassy Se90In10 alloy under the influence of additives (Sn, Ag, Sb, and Ge). For this, we have determined the micro-hardness of all glassy alloys. Using the values of Vickers hardness (Hv), glass transition temperature (Tg), and present glasses, we have calculated the other significant thermo-mechanical parameters. The effect of Sn, Ag, Sb, and Ge additives on the micro-hardness of glassy Se90In10 alloy is also discussed.

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44

Abou El Kheir, Omar, and Marco Bernasconi. "High-Throughput Calculations on the Decomposition Reactions of Off-Stoichiometry GeSbTe Alloys for Embedded Memories." Nanomaterials 11, no. 9 (September 13, 2021): 2382. http://dx.doi.org/10.3390/nano11092382.

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Chalcogenide GeSbTe (GST) alloys are exploited as phase change materials in a variety of applications ranging from electronic non-volatile memories to neuromorphic and photonic devices. In most applications, the prototypical Ge2Sb2Te5 compound along the GeTe-Sb2Te3 pseudobinary line is used. Ge-rich GST alloys, off the pseudobinary tie-line with a crystallization temperature higher than that of Ge2Sb2Te5, are currently explored for embedded phase-change memories of interest for automotive applications. During crystallization, Ge-rich GST alloys undergo a phase separation into pure Ge and less Ge-rich alloys. The detailed mechanisms underlying this transformation are, however, largely unknown. In this work, we performed high-throughput calculations based on Density Functional Theory (DFT) to uncover the most favorable decomposition pathways of Ge-rich GST alloys. The knowledge of the DFT formation energy of all GST alloys in the central part of the Ge-Sb-Te ternary phase diagram allowed us to identify the cubic crystalline phases that are more likely to form during the crystallization of a generic GST alloy. This scheme is exemplified by drawing a decomposition map for alloys on the Ge-Ge1Sb2Te4 tie-line. A map of decomposition propensity is also constructed, which suggests a possible strategy to minimize phase separation by still keeping a high crystallization temperature.

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Gao, Chan, Xiaoyong Yang, Ming Jiang, Lixin Chen, Zhiwen Chen, and Chandra Veer Singh. "Machine learning-enabled band gap prediction of monolayer transition metal chalcogenide alloys." Physical Chemistry Chemical Physics 24, no. 7 (2022): 4653–65. http://dx.doi.org/10.1039/d1cp05847a.

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Abou El-Hassan, S. "Electrical properties of some chalcogenide glassy alloys of the system Se100−xInx." Physica B: Condensed Matter 307, no. 1-4 (December 2001): 86–94. http://dx.doi.org/10.1016/s0921-4526(01)00639-1.

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Kumar, Arun, Vipenpal Singh, Harkawal Singh, Pankaj Sharma, and Navdeep Goyal. "Electronic transport properties of (Se80Te20)100−xZnx (2 ≤ x ≤ 6) chalcogenide alloys." Physica B: Condensed Matter 555 (February 2019): 41–46. http://dx.doi.org/10.1016/j.physb.2018.11.044.

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Aminorroaya Yamini, Sima, Vaughan Patterson, and Rafael Santos. "Band-Gap Nonlinearity in Lead Chalcogenide (PbQ, Q = Te, Se, S) Alloys." ACS Omega 2, no. 7 (July 11, 2017): 3417–23. http://dx.doi.org/10.1021/acsomega.7b00539.

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Wang, Duo, Lei Liu, Neha Basu, and Houlong L. Zhuang. "High‐Throughput Computational Characterization of 2D Compositionally Complex Transition‐Metal Chalcogenide Alloys." Advanced Theory and Simulations 3, no. 11 (October 7, 2020): 2000195. http://dx.doi.org/10.1002/adts.202000195.

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Koman, B. P., O. O. Balitskii, and D. S. Leonov. "Photoplastic Effect in Narrow-Gap Mercury Chalcogenide Crystals." METALLOFIZIKA I NOVEISHIE TEKHNOLOGII 40, no. 4 (August 13, 2018): 529–40. http://dx.doi.org/10.15407/mfint.40.04.0529.

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