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Journal articles on the topic 'Cd3As2'

Author: Grafiati
Published: 6 September 2023

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1

Carpenter, G. J. C., J. J. Dubowski, and D. F. Williams. "Transmission electron microscopy characterization of the microstructure of Cd3As2 films prepared by pulsed-laser evaporation." Canadian Journal of Physics 65, no. 8 (1987): 961–65. http://dx.doi.org/10.1139/p87-151.

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Transmission electron microscopy with an analytical X-ray system has been used to investigate Cd3As2 films prepared by pulsed-laser evaporation. The films were deposited on amorphous substrates at ~ 120 °C. They consisted mainly of a fine polycrystalline array. The crystal structure was identified as the body-centered tetragonal form of Cd3As2. No other crystallographic phase of Cd3As2 was observed. Some regions with amorphous or eutectic inclusions were also observed. These results have been correlated with the electrical properties of pulsed-laser evaporated Cd3As2 films.
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2

Kovaleva, Natalia, Ladislav Fekete, Dagmar Chvostova, and Andrei Muratov. "Morphology and Optical Properties of Thin Cd3As2 Films of a Dirac Semimetal Compound." Metals 10, no. 10 (2020): 1398. http://dx.doi.org/10.3390/met10101398.

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Using atomic-force microscopy (AFM) and wide-band (0.02–8.5 eV) spectroscopic ellipsometry techniques, we investigated the morphology and optical properties of Cd3As2 films grown by non-reactive RF magnetron sputtering on two types of oriented crystalline substrates (100)p-Si and (001) α-Al2O3. The AFM study revealed the grainy morphology of the films due to island incorporation during the film growth. The complex dielectric function spectra of the annealed Cd3As2/Al2O3 films manifest pronounced interband optical transitions at 1.2 and 3.0 eV, in excellent agreement with the theoretical calculations for the body centered tetragonal Cd3As2 crystal structure. We discovered that due to electronic excitations to the Cd(s) conical bands, the low-energy absorption edge of the annealed Cd3As2 films reveals a linear dependence. We found that for the annealed Cd3As2 films, the Cd(s) conical node may be shifted in energy by about 0.08–0.18 eV above the heavy-flat As(p) valence band, determining the optical gap value. The as-grown Cd3As2 films exhibit the pronounced changes of the electronic band structure due to the doping effect associated with Cd non-stoichiometry, where fine-tuning of the Cd concentration may result in the gapless electronic band structure of Dirac semimetals.
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3

Liang, Gaoming, Guihao Zhai, Jialin Ma, et al. "Strain-induced circular photogalvanic current in Dirac semimetal Cd3As2 films epitaxied on a GaAs(111)B substrate." Nanoscale 14, no. 6 (2022): 2383–92. http://dx.doi.org/10.1039/d1nr05812f.

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The circular photogalvanic current was observed in Dirac semimetal Cd3As2 film, which was suggested to originate from the reduced structure symmetry and modified band structure of Cd3As2 film that undergoes large epitaxial strain.
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4

Liang, Gaoming, Guihao Zhai, Jialin Ma, et al. "Circular Photogalvanic Current in Ni-Doped Cd3As2 Films Epitaxied on GaAs(111)B Substrate." Nanomaterials 13, no. 13 (2023): 1979. http://dx.doi.org/10.3390/nano13131979.

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Magnetic element doped Cd3As2 Dirac semimetal has attracted great attention for revealing the novel quantum phenomena and infrared opto-electronic applications. In this work, the circular photogalvanic effect (CPGE) was investigated at various temperatures for the Ni-doped Cd3As2 films which were grown on GaAs(111)B substrate by molecular beam epitaxy. The CPGE current generation was found to originate from the structural symmetry breaking induced by the lattice strain and magnetic doping in the Ni-doped Cd3As2 films, similar to that in the undoped ones. However, the CPGE current generated in the Ni-doped Cd3As2 films was approximately two orders of magnitude smaller than that in the undoped one under the same experimental conditions and exhibited a complex temperature variation. While the CPGE current in the undoped film showed a general increase with rising temperature. The greatly reduced CPGE current generation efficiency and its complex variation with temperature in the Ni-doped Cd3As2 films was discussed to result from the efficient capture of photo-generated carriers by the deep-level magnetic impurity bands and enhanced momentum relaxation caused by additional strong impurity scattering when magnetic dopants were introduced.
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5

Fluegel, B., A. D. Rice, and K. Alberi. "Vibrational modes and crystallographic structure of Cd3As2 and (Cd1-x Zn x )3As2 epilayers." Journal of Physics D: Applied Physics 55, no. 14 (2022): 145103. http://dx.doi.org/10.1088/1361-6463/ac43db.

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Abstract Low-temperature Raman scattering is used to study the crystal structure of molecular-beam epitaxially grown layers of the Dirac semimetal Cd3As2 and its related alloy (Cd1-x Zn x )3As2. The combination of narrow-linewidth spectra, multiple growth directions and full polarization analysis allows improved accuracy in identifying the irreducible representation of over 57 Raman-active vibrations. Several disagreements with previous identifications are found. Structurally, the results agree with the centrosymmetric I41/acd space group of bulk-grown Cd3As2 and are clearly distinct from the Raman spectra of nanoscale platelets and wires. Three-fold twinning is seen in (112) Cd3As2 grown on (111) zincblende substrates corresponding to the three possible tetragonal orientations. In dilute (Cd1-x Zn x )3As2, phonons have a frequency and scattering amplitude dependence on Zn concentration that is continuous with Cd3As2 but at least one frequency is absent at the alloy endpoint, preventing a simple one-mode description of the alloy phonon.
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6

Rice, Anthony, and Kirstin Alberi. "Epitaxial Integration of Dirac Semimetals with Si(001)." Crystals 13, no. 4 (2023): 578. http://dx.doi.org/10.3390/cryst13040578.

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Topological semimetals contain novel combinations of properties that make them useful in a variety of applications, including optoelectronics, spintronics and low energy computing, and catalysis. Although they have been grown with high quality as bulk single crystals, incorporation with semiconductor substrates will ultimately be required to maximize their technological reach. Here, epitaxial growth of the Dirac semimetal Cd3As2 on Si(001) is demonstrated through two routes. First, Cd3As2(112) epilayers are grown on Si(001) via an intermediate CdTe(111) buffer layer. Second, Cd3As2(112) is grown directly on Si(001). This work sets the foundation for integration of novel semimetal materials with existing CMOS technology.
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7

Li, Na, Zhen-Bing Tan, Jing-Jing Chen, et al. "Gate modulation of anisotropic superconductivity in Al–Dirac semimetal Cd3As2 nanoplate–Al Josephson junctions." Superconductor Science and Technology 35, no. 4 (2022): 044003. http://dx.doi.org/10.1088/1361-6668/ac4c84.

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Abstract Three-dimensional Dirac semimetal Cd3As2, hosting a pair of Dirac cones and Fermi arc-like surface states, displays numerous exotic properties in transport experiments. In particular, when proximitized with a superconductor, Cd3As2 is expected to realize topological superconductivity and Majorana zero modes, which are essential for fault-tolerant quantum computing. Here, using electronic transport measurements on superconductor Al–Cd3As2 nanoplate–Al heterostructures, we investigate the effect of gate modulation and magnetic field on the superconducting properties of Cd3As2. A proximity-induced superconducting state is well achieved in the junction, which can be effectively tuned by the gate voltage. The critical current oscillations under out-of-plane magnetic fields are well fitted with the Fraunhofer function. The critical supercurrent shows a slower decay as the gate voltage is tuned to negative under in-plane magnetic fields, which may arise from the enhanced contribution of surface states. Anisotropic superconductivity is also observed with in-plane rotating magnetic fields. Our results report the gate modulation of supercurrents in different magnetic field directions, which should be valuable for further exploring the topological superconductivity in Dirac semimetals.
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8

Weber, C. P., Ernest Arushanov, Bryan S. Berggren, Tahereh Hosseini, Nikolai Kouklin, and Alex Nateprov. "Transient reflectance of photoexcited Cd3As2." Applied Physics Letters 106, no. 23 (2015): 231904. http://dx.doi.org/10.1063/1.4922528.

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9

Houde, D., S. Jandl, M. Banville, and M. Aubin. "The infrared spectrum of Cd3As2." Solid State Communications 57, no. 4 (1986): 247–48. http://dx.doi.org/10.1016/0038-1098(86)90149-3.

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10

Bartkowski, K., G. Pompe, and E. Hegenbarth. "Specific Heat of Single-Crystalline Cd3As2, Cd3P2, and Zn3P2 at Low Temperatures." Physica Status Solidi (a) 111, no. 2 (1989): K165—K169. http://dx.doi.org/10.1002/pssa.2211110243.

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11

Liao, Xin, Chang Xu, Zi-Pu Fan, et al. "Gate-enhanced broadband photodetection based on Cd3As2/graphene Dirac heterojunctions." Applied Physics Letters 122, no. 3 (2023): 031105. http://dx.doi.org/10.1063/5.0139561.

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Dirac semimetals are promising materials for broadband and fast photodetection due to their gapless nature. Dirac heterostructures consisting of 2D Dirac semimetal graphene and its 3D analogue Cd3As2 should take the ascendency of high carrier mobility in both materials, while overcome the limitation of weak optical absorption in graphene-based devices and suppress the dark current occurring in pure Cd3As2 photodetectors. Herein, we report high-performance photodetectors based on a 3D Dirac semimetal Cd3As2/monolayer graphene heterostructure, which show broadband photoresponse from visible (488 nm) to mid-infrared (10 μm) wavelength region at room temperature without an external bias. The photodetectors are with a maximum responsivity of 0.34 mA/W at 488 nm and a fast response speed of ∼13 μs. In addition, the photoresponse can be enhanced by a gate voltage even in a long wavelength region. Our work suggests that the combination of the graphene and 3D Dirac semimetal is promising for high-performance photodetectors with broadband detection, high sensitivity, and rapid response.
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12

Stephen, Gregory M., Aubrey T. Hanbicki, Timo Schumann, et al. "Room-Temperature Spin Transport in Cd3As2." ACS Nano 15, no. 3 (2021): 5459–66. http://dx.doi.org/10.1021/acsnano.1c00154.

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13

Hupfer, A., D. Hirsch, and S. Schulze. "Photoemission on A3IIB2V semiconductor material. Cd3As2, Zn3As2, Cd3P2, Zn3P2 crystals and thin films." physica status solidi (b) 152, no. 2 (1989): 505–17. http://dx.doi.org/10.1002/pssb.2221520213.

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14

Yang, Linjing, Chuanfei Yao, Yongjing Wu, et al. "Theoretical study on multi-range pulsewidth tuning in a dissipative soliton laser mode-locked by a Dirac semimetal." AIP Advances 13, no. 4 (2023): 045215. http://dx.doi.org/10.1063/5.0138435.

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Ultrashort pulse fiber lasers with tunable pulsewidth have a wide range of applications in telecommunication, micro-fabrication, and nonlinear bioimaging. In this paper, we reported the simulation of multi-range pulsewidth-tunable ultrashort pulse laser generation in a mode-locked Er3+ doped fiber laser based on Cd3As2 as a saturable absorber (SA) for the first time. By changing the modulation depth (MD) of Cd3As2 SA from 35% to 75% at the different net normal dispersion, the pulsewidth of the fiber laser is tuned from 4.07 to 48.9 ps. In our simulation, the maximum single tunable range (20.3–48.9 ps) can be obtained when we use a long normal dispersion fiber to increase the net normal dispersion of the cavity, and the minimum tunable range of 1.68–2.45 ps is also achieved by further simultaneously decreasing the cavity length and the net normal dispersion. This model of a mode-locked fiber laser controlled by the MD of Cd3As2 SA provides a simple, reliable, and low-cost solution for a variety of applications that require width-tunable pulses.
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15

Сайпулаева, Л. А., К. Ш. Хизриев, Н. В. Мельникова та ін. "Особенности поведения электро- и магнитосопривления Cd-=SUB=-3-=/SUB=-As-=SUB=-2-=/SUB=--30 mol.% MnAs при высоких давлениях". Физика твердого тела 63, № 8 (2021): 1146. http://dx.doi.org/10.21883/ftt.2021.08.51169.061.

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Представлены результаты исследования электро- и магнитосопротивления (МС) композита, состоящего из дираковского полуметалла Cd3As2 и 30 mol.% ферромагнетика MnAs при давлениях до 50 GPa. В диапазоне давлений 16-50 GPa наблюдалось гистерезисное поведение транспортных свойств при двух последовательных циклах приложения и снятия давления. Измерения МС в режиме подъема и сброса давления выявили особенности в виде максимумов отрицательного и положительного МС, величины относительного магнитосопротивления (Delta R/R0) достигали ~20 и ~5.3% соответственно. Установлена нестабильность моноклинной структуры Cd3As2 в результате ее частичного разложения при декомпрессии. Ключевые слова: высокое давление, композит, удельное электросопротивление, отрицательное магнитосопротивление, структурный фазовый переход.
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16

Hupfer, A., S. Schulze, D. Hirsch, and L. Żdanowicz. "Surface preparation of A3IIB2V semiconductors (Cd3As2, Zn3As2, Cd3P2, Zn3P2) under ultra-high vacuum conditions." Crystal Research and Technology 22, no. 7 (1987): 911–22. http://dx.doi.org/10.1002/crat.2170220710.

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17

Saypulaeva, L. A., Sh B. Abdulvagidov, M. M. Gadzhialiev, et al. "The effect of temperature on the current-voltage characteristics of Cd3As2 + MnAs." Herald of Dagestan State University 34, no. 3 (2019): 22–29. http://dx.doi.org/10.21779/2542-0321-2019-34-3-22-29.

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18

Kochura, A. V., L. N. Oveshnikov, A. F. Knjazev, et al. "Synthesis and magnetoresistance of (Cd1−x Znx)3As2 (x = 0,007) crystals." Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering 20, no. 2 (2019): 134–41. http://dx.doi.org/10.17073/1609-3577-2017-2-134-141.

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The vapor phase growth of Cd3As2—Zn3As2 (in the following (Cd1−x Znx)3As2 solid solutions process is described. The (Cd0,993 Zn0,007)3As2 solid solution single crystals were synthesized. Scanning electron microscopy and electron diffraction data suggest high crystalline quality of studied sample. Its structure and surface morphology, indicating the presence of growth nuclei and cleavage planes, were investigated. Giant anisotropic magnetoresistance and Shubnikov — de Haas oscillations were observed at low temperatures. Obtained results suggests that peculiarities of Dirac semimetal phase persist in (Cd1−x Znx)3As2 solid solution at low zinc content. At the same time, there are indications of some differences with initial Cd3As2 properties.
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19

Ullah, Kaleem, Yafei Meng, Yue Sun, et al. "Third harmonic generation in Dirac semimetal Cd3As2." Applied Physics Letters 117, no. 1 (2020): 011102. http://dx.doi.org/10.1063/5.0010707.

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20

Маренкин, С. Ф., В. М. Трухан, И. В. Федорченко, С. В. Труханов та Т. В. Шёлковая. "Магнитные и электрические свойства композита Cd3As2+ MnAs". Журнал неорганической химии 59, № 4 (2014): 511–16. http://dx.doi.org/10.7868/s0044457x14040114.

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21

El-Shazly, AA, HS Soliman, Da Abd El-Hady, and HEA El-Sayed. "Transport properties of thin Cd3As2 polycrystalline films." Vacuum 47, no. 1 (1996): 45–48. http://dx.doi.org/10.1016/0042-207x(95)00186-7.

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El-Shazly, AA, HS Soliman, Da Abd El-Hady, and HEA El-Sayed. "Optical properties of Cd3As2 polycrystalline thin films." Vacuum 47, no. 1 (1996): 53–56. http://dx.doi.org/10.1016/0042-207x(95)00195-6.

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23

Горюнов, Ю. В., та А. Н. Натепров. "Влияние уровней Ландау на ССТС спектров ЭПР преципитатов Fe-=SUP=-3+-=/SUP=- в дираковском 3D-полуметалле Cd-=SUB=-3-=/SUB=-As-=SUB=-2-=/SUB=-". Физика твердого тела 62, № 1 (2020): 78. http://dx.doi.org/10.21883/ftt.2020.01.48738.577.

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The influence of d-metal impurities on the magnetic and transport properties of the 3D topological Cd3As2 semimetal is experimentally studied. It was found that when doping with iron, unlike Eu, there is no change in the sign of magneto resistance. There is an increase in the oscillations of the quantities (magnetic susceptibility, contact potential difference, and conductivity) associated with oscillations in the density of states at the Fermi level with temperature and magnetic field. In the temperature range of 10–300 K, EPR signals from Fe2+ ions were not detected, although, most likely, are the main type of Fe impurity in Cd3As2. From Fe3+ ions, weak EPR signals with a super-hyperfine structure (SHFS) were observed, which are obviously effected by Landau levels.
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24

Сайпулаева, Л. А., Ш. Б. Абдулвагидов, Т. Р. Арсланов та ін. "Намагниченность композита Cd-=SUB=-3-=/SUB=-As-=SUB=-2-=/SUB=- + (30%)MnAs при высоком давлении". Журнал технической физики 91, № 11 (2021): 1674. http://dx.doi.org/10.21883/jtf.2021.11.51527.75-21.

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25

Rashidi, Arman, Robert Kealhofer, Alexander C. Lygo, Victor Huang, and Susanne Stemmer. "Induced superconductivity in the two-dimensional topological insulator phase of cadmium arsenide." APL Materials 11, no. 4 (2023): 041117. http://dx.doi.org/10.1063/5.0145067.

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Hybrid structures between conventional, s-wave superconductors, and two-dimensional topological insulators (2D TIs) are a promising route to topological superconductivity. Here, we investigate planar Josephson junctions fabricated from hybrid structures that use thin films of cadmium arsenide (Cd3As2) as the 2D TI material. Measurements of superconducting interference patterns in a perpendicular magnetic field are used to extract information about the spatial distribution of the supercurrent. We show that the interference patterns are distinctly different in junctions with and without mesa-isolation. In mesa-defined junctions, the bulk of the 2D TI appears to be almost completely shunted by supercurrent flowing along the edges, whereas the supercurrent is much more uniform across the junction when the Cd3As2 film extends beyond the device. We discuss the possible origins of the observed behaviors.
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26

Zhou, Tong, Cheng Zhang, Huisheng Zhang, Faxian Xiu, and Zhongqin Yang. "Enhanced thermoelectric properties of the Dirac semimetal Cd3As2." Inorganic Chemistry Frontiers 3, no. 12 (2016): 1637–43. http://dx.doi.org/10.1039/c6qi00383d.

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The thermoelectric behavior of the Dirac semimetal Cd<sub>3</sub>As<sub>2</sub>can be much improved by electron or hole doping, especially the latter. The optimumZTis found to be about 0.5, much larger than that (0.15) obtained in pristine Cd<sub>3</sub>As<sub>2</sub>in experiments.
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Liu, Z. K., J. Jiang, B. Zhou, et al. "A stable three-dimensional topological Dirac semimetal Cd3As2." Nature Materials 13, no. 7 (2014): 677–81. http://dx.doi.org/10.1038/nmat3990.

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28

Marenkin, S. F., V. M. Trukhan, I. V. Fedorchenko, S. V. Trukhanov, and T. V. Shoukavaya. "Magnetic and electrical properties of Cd3As2 + MnAs composite." Russian Journal of Inorganic Chemistry 59, no. 4 (2014): 355–59. http://dx.doi.org/10.1134/s0036023614040111.

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29

Amarnath, R., K. S. Bhargavi, and S. S. Kubakaddi. "Phonon limited mobility in 3D Dirac semimetal Cd3As2." IOP Conference Series: Materials Science and Engineering 561 (November 12, 2019): 012030. http://dx.doi.org/10.1088/1757-899x/561/1/012030.

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Amarnath, R., K. S. Bhargavi, and S. S. Kubakaddi. "Thermoelectric transport properties in 3D Dirac semimetal Cd3As2." Journal of Physics: Condensed Matter 32, no. 22 (2020): 225704. http://dx.doi.org/10.1088/1361-648x/ab720f.

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Schönherr, P., and T. Hesjedal. "Structural properties and growth mechanism of Cd3As2 nanowires." Applied Physics Letters 106, no. 1 (2015): 013115. http://dx.doi.org/10.1063/1.4905564.

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32

Lim, Chee Shan, Zdeněk Sofer, and Martin Pumera. "Electrochemistry of Cd3As2-A 3D Analogue of Graphene." ChemNanoMat 1, no. 5 (2015): 359–63. http://dx.doi.org/10.1002/cnma.201500071.

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33

Weszka, J. "Model of Lattice Dynamics of Cd3As2 Single Crystals." physica status solidi (b) 211, no. 2 (1999): 605–19. http://dx.doi.org/10.1002/(sici)1521-3951(199902)211:2<605::aid-pssb605>3.0.co;2-y.

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Сайпулаева, Л. А., З. Ш. Пирмагомедов, М. М. Гаджиалиев та ін. "Спин-поляризованный электрический ток в нанокомпозите Cd-=SUB=-48.6-=/SUB=-Mn-=SUB=-11.4-=/SUB=-As-=SUB=-40-=/SUB=-". Физика твердого тела 63, № 4 (2021): 427. http://dx.doi.org/10.21883/ftt.2021.04.50706.243.

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В нанокомзозите Cd48.6Mn11.4As40 в интервале температур 10-350 K впервые измерены температурные зависимости электросопротивления и намагниченности. Показано, что электрофизические свойства Cd48.6Mn11.4As40 обусловлены спиновой поляризацией собственных электронов в матрице Cd3As2 спин-поляризованными электронами, инжектируемыми в нее из ферромагнитных нанокластеров MnAs. С ростом намагниченности всего образца, угол между намагниченностями отдельных нанокластеров уменьшается и спин-поляризованный ток возрастает. Кроме того, повышение концентрации собственных носителей в матрице приводит к увеличению спин-поляризованного тока. Эта концепция подтверждается и измерениями вольтамперных характеристик (ВАХ) при напряжениях до 5 V при температурах как ниже критической температуры образования кластерного стекла Tcg=241 (при 77 и 172 K), так и выше нее (при 273.15 и 373.15 K), которые обнаруживают отклонение от омичности, возрастающее с напряжением. Это означает, что чем больше спиновая поляризация собственных электронов в Cd3As2, вследствие увеличения инжекции спин-поляризованных электронов из MnAs с напряжением, тем больше ток. Ключевые слова: спин, нанокомпозиты, вольт-амперные характеристики, сопротивление, спиновая поляризация, полупроводники, спиновая инжекция, намагниченность.
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Сайпулаева, Л. А., З. Ш. Пирмагомедов, М. М. Гаджиалиев та ін. "Спин-поляризованный электрический ток в нанокомпозите Cd-=SUB=-48.6-=/SUB=-Mn-=SUB=-11.4-=/SUB=-As-=SUB=-40-=/SUB=-". Физика твердого тела 63, № 4 (2021): 427. http://dx.doi.org/10.21883/ftt.2021.04.50706.243.

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В нанокомзозите Cd48.6Mn11.4As40 в интервале температур 10-350 K впервые измерены температурные зависимости электросопротивления и намагниченности. Показано, что электрофизические свойства Cd48.6Mn11.4As40 обусловлены спиновой поляризацией собственных электронов в матрице Cd3As2 спин-поляризованными электронами, инжектируемыми в нее из ферромагнитных нанокластеров MnAs. С ростом намагниченности всего образца, угол между намагниченностями отдельных нанокластеров уменьшается и спин-поляризованный ток возрастает. Кроме того, повышение концентрации собственных носителей в матрице приводит к увеличению спин-поляризованного тока. Эта концепция подтверждается и измерениями вольтамперных характеристик (ВАХ) при напряжениях до 5 V при температурах как ниже критической температуры образования кластерного стекла Tcg=241 (при 77 и 172 K), так и выше нее (при 273.15 и 373.15 K), которые обнаруживают отклонение от омичности, возрастающее с напряжением. Это означает, что чем больше спиновая поляризация собственных электронов в Cd3As2, вследствие увеличения инжекции спин-поляризованных электронов из MnAs с напряжением, тем больше ток. Ключевые слова: спин, нанокомпозиты, вольт-амперные характеристики, сопротивление, спиновая поляризация, полупроводники, спиновая инжекция, намагниченность.
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36

Davydov, A. B., L. N. Oveshnikov, A. V. Suslov, A. I. Ril, S. F. Marenkin, and B. A. Aronzon. "Superconductivity in Thin Films of the Dirac Semimetal Cd3As2." Physics of the Solid State 62, no. 3 (2020): 419–22. http://dx.doi.org/10.1134/s1063783420030063.

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Ril, A. I., I. V. Fedorchenko, S. F. Marenkin, A. V. Kochura, and A. E. Kuz’ko. "Phase equilibria in the CdAs2–Cd3As2–MnAs ternary system." Russian Journal of Inorganic Chemistry 62, no. 7 (2017): 976–86. http://dx.doi.org/10.1134/s0036023617070191.

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38

Zhang, Cheng, Yi Zhang, Xiang Yuan, et al. "Quantum Hall effect based on Weyl orbits in Cd3As2." Nature 565, no. 7739 (2018): 331–36. http://dx.doi.org/10.1038/s41586-018-0798-3.

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39

Sierański, K., J. Szatkowski, and J. Misiewicz. "Semiempirical tight-binding band structure ofII3V2semiconductors:Cd3P2,Zn3P2,Cd3As2, andZn3As2." Physical Review B 50, no. 11 (1994): 7331–37. http://dx.doi.org/10.1103/physrevb.50.7331.

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40

Zhang, Shuai, Yiyan Wang, Chaoyang Ma, et al. "Superconductivity at the Normal Metal/Dirac Semimetal Cd3As2 Interface." Chinese Physics Letters 37, no. 7 (2020): 077401. http://dx.doi.org/10.1088/0256-307x/37/7/077401.

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41

Rezaie, Salva S., Honggyu Kim, Timo Schumann, Manik Goyal, and Susanne Stemmer. "HAADF-STEM Study of MBE-Grown Dirac Semimetal Cd3As2." Microscopy and Microanalysis 23, S1 (2017): 1480–81. http://dx.doi.org/10.1017/s1431927617008066.

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42

Chen, Zhi-Gang, Cheng Zhang, Yichao Zou, et al. "Scalable Growth of High Mobility Dirac Semimetal Cd3As2 Microbelts." Nano Letters 15, no. 9 (2015): 5830–34. http://dx.doi.org/10.1021/acs.nanolett.5b01885.

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43

Weszka, J., M. Renucci, and A. Zwick. "Some aspects of raman scattering in Cd3As2 single crystals." physica status solidi (b) 133, no. 1 (1986): 57–64. http://dx.doi.org/10.1002/pssb.2221330106.

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44

Давыдов, А. Б., Л. Н. Овешников, А. В. Суслов, А. И. Риль, С. Ф. Маренкин та Б. А. Аронзон. "Сверхпроводимость в тонких пленках дираковского полуметалла Cd-=SUB=-3-=/SUB=-As-=SUB=-2-=/SUB=-". Физика твердого тела 62, № 3 (2020): 369. http://dx.doi.org/10.21883/ftt.2020.03.48998.617.

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We studied thin films of the Dirac semi-metal Cd3As2, about 100 nm thickness, made by vacuum thermal evaporation from cadmium arsenide single crystals. The temperature and magnetic field dependences of the electrical resistance were measured, which indicate the presence of a superconducting transition at a temperature between 0.2 to 0.6 K.
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45

Kargarian, Mehdi, Mohit Randeria, and Yuan-Ming Lu. "Are the surface Fermi arcs in Dirac semimetals topologically protected?" Proceedings of the National Academy of Sciences 113, no. 31 (2016): 8648–52. http://dx.doi.org/10.1073/pnas.1524787113.

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Motivated by recent experiments probing anomalous surface states of Dirac semimetals (DSMs) Na3Bi and Cd3As2, we raise the question posed in the title. We find that, in marked contrast to Weyl semimetals, the gapless surface states of DSMs are not topologically protected in general, except on time-reversal-invariant planes of surface Brillouin zone. We first demonstrate this finding in a minimal four-band model with a pair of Dirac nodes at k=(0,0,±Q), where gapless states on the side surfaces are protected only near kz=0. We then validate our conclusions about the absence of a topological invariant protecting double Fermi arcs in DSMs, using a K-theory analysis for space groups of Na3Bi and Cd3As2. Generically, the arcs deform into a Fermi pocket, similar to the surface states of a topological insulator, and this pocket can merge into the projection of bulk Dirac Fermi surfaces as the chemical potential is varied. We make sharp predictions for the doping dependence of the surface states of a DSM that can be tested by angle-resolved photoemission spectroscopy and quantum oscillation experiments.
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46

Zakhvalinskii, V. S., E. A. Pilyuk, T. B. Nikulicheva, et al. "Hopping Conductivity Mechanism in Cd3As2 Films Prepared by Magnetron Sputtering." Journal of Nano- and Electronic Physics 12, no. 3 (2020): 03029–1. http://dx.doi.org/10.21272/jnep.12(3).03029.

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47

Ril, A. I., and S. F. Marenkin. "Magnetometric Studies of Composite Alloys of the Cd3As2–MnAs System." Russian Journal of Inorganic Chemistry 66, no. 10 (2021): 1544–48. http://dx.doi.org/10.1134/s0036023621100144.

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48

Liang, Tian, Quinn Gibson, Mazhar N. Ali, Minhao Liu, R. J. Cava, and N. P. Ong. "Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd3As2." Nature Materials 14, no. 3 (2014): 280–84. http://dx.doi.org/10.1038/nmat4143.

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49

Desrat, W., C. Consejo, F. Teppe, et al. "Non-trivial Berry phase in the Cd3As2 3D Dirac semimetal." Journal of Physics: Conference Series 647 (October 13, 2015): 012064. http://dx.doi.org/10.1088/1742-6596/647/1/012064.

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50

Alibekov, A. G., A. Yu Mollaev, L. A. Saipullaeva, S. F. Marenkin, and I. V. Fedorchenko. "Magnetotransport effects in granular Cd3As2 + MnAs structures at high pressures." Inorganic Materials 52, no. 4 (2016): 357–60. http://dx.doi.org/10.1134/s0020168516040014.

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