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Journal articles on the topic 'Carrier recombination'

Author: Grafiati

Published: 4 June 2021

Last updated: 11 January 2025

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1

Musa, Hiba J., and Ahmed H. Flayyih. "Carrier dynamic and carrier Temperature in Quantum Well." University of Thi-Qar Journal of Science 9, no. 1 (September 23, 2022): 102–7. http://dx.doi.org/10.32792/utq/utjsci.v9i1.889.

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Carrier temperature in quantum well (QW)semiconductor optical amplifier (SOA) has been studied,depending density matrix theory (DMT) and carrier dynamicin quantum well. The effect of volume carrier density, dopingon effect, pulse shape, nonradiative relaxation, and nonlineargain coefficients on the carrier temperature and carrierheating has been investigated. The theoretical results showthat; the time recovery increases straightforward withnonradiative recombination, where the relaxation time ofnonradiative recombination reduces the rate of carrieroccupation in quantum states. Also, the carrier temperatureincreases with carrier density, free carrier absorption, carrierheating lifetime and reduces with pulse shape of pump pulses

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2

Moses, D., and A. J. Heeger. "Fast transient photoconductivity in polydiacetylene: carrier photogeneration, carrier mobility and carrier recombination." Journal of Physics: Condensed Matter 1, no. 40 (October 9, 1989): 7395–405. http://dx.doi.org/10.1088/0953-8984/1/40/013.

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3

deQuilettes, Dane W., Kyle Frohna, David Emin, Thomas Kirchartz, Vladimir Bulovic, David S. Ginger, and Samuel D. Stranks. "Charge-Carrier Recombination in Halide Perovskites." Chemical Reviews 119, no. 20 (September 9, 2019): 11007–19. http://dx.doi.org/10.1021/acs.chemrev.9b00169.

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4

Volkov, Victor V., Z. L. Wang, and B. S. Zou. "Carrier recombination in clusters of NiO." Chemical Physics Letters 337, no. 1-3 (March 2001): 117–24. http://dx.doi.org/10.1016/s0009-2614(01)00191-9.

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5

Konin, A. "Interface recombination influence on carrier transport." Semiconductor Science and Technology 28, no. 2 (December 27, 2012): 025003. http://dx.doi.org/10.1088/0268-1242/28/2/025003.

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6

Smaili, Idris H., and Ghazi Ben Hmida. "A Review of Minority Carrier Recombination Lifetime Measurements." International Journal for Research in Applied Science and Engineering Technology 11, no. 5 (May 31, 2023): 1351–63. http://dx.doi.org/10.22214/ijraset.2023.51725.

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Abstract: The recombination lifetime of minority carriers is a critical parameter in semiconductor devices such as photovoltaic cells since it controls the efficiency of such devices. Many techniques have been developed to accomplish recombination measurements and thereby test semiconductor devices' efficiencies. Recombination lifetime average values differ according to semiconductor device type; thus, choosing an appropriate technique is important. This paper studies the concept of excess minority carrier lifetime and its calculations. It also investigates the advantages, limitations, and capabilities of the most common recombination lifetime measurement techniques. A chart was drawn with all known measurement methods to make it easier to understand the relation between these techniques.

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7

Shura, Megersa Wodajo. "A Simple Method to Differentiate between Free-Carrier Recombination and Trapping Centers in the Bandgap of the p-Type Semiconductor." Advances in Materials Science and Engineering 2021 (September 7, 2021): 1–13. http://dx.doi.org/10.1155/2021/5568880.

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In this research, the ranges of the localized states in which the recombination and the trapping rates of free carriers dominate the entire transition rates of free carriers in the bandgap of the p-type semiconductor are described. Applying the Shockley–Read–Hall model to a p-type material under a low injection level, the expressions for the recombination rates, the trapping rates, and the excess carrier lifetimes (recombination and trapping) were described as functions of the localized state energies. Next, the very important quantities called the excess carriers’ trapping ratios were described as functions of the localized state energies. Variations of the magnitudes of the excess carriers’ trapping ratios with the localized state energies enable us to categorize the localized states in the bandgap as the recombination, the trapping, the acceptor, and the donor levels. Effects of the majority and the minority carriers’ trapping on the excess carrier lifetimes are also evaluated at different localized energy levels. The obtained results reveal that only excess minority trapping affects the excess carrier lifetimes, and excess majority carrier trapping has no effect.

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8

Du, Sichao, Juxin Yin, Hao Xie, Yunlei Sun, Tao Fang, Yu Wang, Jing Li, et al. "Auger scattering dynamic of photo-excited hot carriers in nano-graphite film." Applied Physics Letters 121, no. 18 (October 31, 2022): 181104. http://dx.doi.org/10.1063/5.0116720.

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Charge carrier scattering channels in graphite bridging its valence and conduction band offer an efficient Auger recombination dynamic to promote low energy charge carriers to higher energy states. It is of importance to answer the question whether a large number of charge carriers can be promoted to higher energy states to enhance the quantum efficiency of photodetectors. Here, we present an experimental demonstration of an effective Auger recombination process in the photo-excited nano-graphite film. The time-resolved hot carrier thermalization was analyzed based on the energy dissipation via the Auger scattering channels. We split the Auger recombination occurrence centered at 0.40 eV energy state into scattering and recombination parts, for characterizing the scattering rate in the conduction band and the recombination rate toward the valence band. The scattering time with respect to the energy state was extracted as 8 ps · eV−1, while the recombination time with respect to the energy state was extracted as 24 ps · eV−1. Our study indicates a 300 fs delay between the hot carrier recombination and generation, leading to a 105 ps−1 · cm−3 Auger scattering efficiency. The observed duration for the Auger recombination to generate hot carriers is prolonged for 1 ps, due to the hot carriers energy relaxation bottleneck with optical-phonons in the nano-graphite. The presented analytic expression gives valuable insights into the Auger recombination dynamic to estimate its most efficient energy regime for mid-infrared photodetection.

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9

Tanaka, Kazuhiro, and Masashi Kato. "Carrier recombination in highly Al doped 4H-SiC: dependence on the injection conditions." Japanese Journal of Applied Physics 63, no. 1 (January 1, 2024): 011002. http://dx.doi.org/10.35848/1347-4065/ad160c.

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Abstract We investigate carrier recombination mechanisms in heavily aluminum (Al) doped p-type 4H-SiC, a material crucial for power devices. The recombination mechanisms in Al-doped p-type 4H-SiC have remained unclear, with reports suggesting various possibilities. To gain insights, we employ photoluminescence (PL) measurements, particularly time-resolved PL (TR-PL), as they are well-suited for studying carrier lifetimes in heavily Al-doped p-type 4H-SiC. We examine the temperature and excitation intensity dependencies of TR-PL and PL spectra and discuss the underlying recombination mechanisms. We observe that the dominant recombination mechanism varies with injection conditions for the samples with Al concentration less than 1019 cm−3. Under low injection conditions, recombination via the Al acceptor level appears dominant, exhibiting weak temperature dependence. However, under high injection conditions, Shockley–Read–Hall recombination takes precedence, leading to shorter carrier lifetimes with increasing temperature. This temperature dependence implies that presences of the deep recombination centers with the small capture barrier for holes.

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10

Juška, Gytis, Kęstutis Arlauskas, and Kristijonas Genevičius. "Charge carrier transport and recombination in disordered materials." Lithuanian Journal of Physics 56, no. 3 (October 17, 2016): 182–89. http://dx.doi.org/10.3952/physics.v56i3.3367.

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In this brief review the methods for investigation of charge carrier transport and recombination in thin layers of disordered materials and the obtained results are discussed. The method of charge carrier extraction by linearly increasing voltage (CELIV) is useful for the determination of mobility, bulk conductivity and density of equilibrium charge carriers. The extraction of photogenerated charge carriers (photo-CELIV) allows one to independently investigate relaxation of both the mobility and density of photogenerated charge carriers. The extraction of injected charge carriers (i-CELIV) is effective for the independent investigation of transport peculiarities of both injected holes and electrons in bulk heterojunctions. For the investigation of charge carrier recombination we proposed integral time-of-flight (TOF) and double-injection (DI) current transient methods. The methods allowed us to obtain the following significant results: to determine the reason of the conductivity dependence on electric field strength and temperature in the amorphous and microcrystalline hydrogenated silicon and π-conjugated polymers, the time dependent Langevin recombination, the impact of morphology on charge carrier mobility, the reason of reduced Langevin recombination in RR-PHT (regioregular poly(3-hexylthiophene))/PCBM (1-(3-methoxycarbonyl)propyl-1phenyl-[6,6]-methanofullerene) bulk heterojunction structures – 2D Langevin recombination; and to evaluate that the mobility of holes is predetermined by off-diagonal dispersion in poly-PbO.

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11

Eldridge, Peter S., Jolie C. Blake, and Lars Gundlach. "Ultrafast Probe of Carrier Diffusion and Nongeminate Processes in a Single CdSSe Nanowire." Journal of Spectroscopy 2015 (2015): 1–6. http://dx.doi.org/10.1155/2015/574754.

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We measure ultrafast carrier dynamics in a single CdSSe nanowire at different excitation fluences using an ultrafast Kerr-gated microscope. The time-resolved emission exhibits a dependence on excitation fluence, with the onset of the emission varying on the picosecond time scale with increasing laser power. By fitting the emission to a model for amplified spontaneous emission (ASE), we are able to extract the nonradiative carrier recombination lifetime and nongeminate recombination constant. The extracted nongeminate recombination constant suggests that our measurement technique allows the access to the nondiffusion limited recombination regime in nanowires with low carrier mobility.

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12

Chung, Gil Yong, Mark J. Loboda, M. J. Marinella, D. K. Schroder, Paul B. Klein, Tamara Isaacs-Smith, and J. W. Williams. "Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers." Materials Science Forum 600-603 (September 2008): 485–88. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.485.

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Compared to silicon, there have been relatively few comparative studies of recombination and carrier lifetimes in SiC. For the first time, both generation and recombination carrier lifetimes are reported from the same areas in 20 m thick 4H SiC n-/n+ epi-wafer structures. The ratio of the generation to recombination lifetime is much different in SiC compared to Si. Activation energy calculated from SiC generation lifetimes shows that traps with energy levels near mid-gap dominate the generation lifetime. Comparison of both generation and recombination lifetimes and dislocation counts measured in the device area show no correlation in either case.

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13

Tao, Tingting, Jingting Shu, Yingnan Guo, Kai Wang, Xiaohui Zhao, Baolai Liang, Zhiqiang Li, and Wei Dang. "Trapped Carrier Recombination in Sb2Se3 Polycrystalline Film." Crystals 13, no. 3 (February 27, 2023): 406. http://dx.doi.org/10.3390/cryst13030406.

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Sb2Se3 has recently emerged as a promising material for optic-electronic applications. In this work, trapped carrier recombination in Sb2Se3 was investigated by joint use of time-resolved microwave conductivity (TRMC) and photoluminescence (PL) spectroscopy. trapped carrier thermal excitation into the continuous band was observed in TRMC kinetics. Based on the exponential band tail model, the depth of the trap state, where trapped carriers are released into a continuous band, was estimated to range from 33.0 meV to 110.0 meV at room temperature. Temperature-varying TRMC and PL were further employed to study the influence of temperature on the trapped carrier recombination. Negative thermal quenchings of PL intensity and quantity of thermal emission carriers were observed and can be well explained by the thermal excitation of deep trapped carriers into shallow trap states and the continuous band. Two thermal activation energies of 12.5 meV and 304.0 meV were also revealed. This work is helpful for understanding the trapped carrier recombination process in polycrystalline Sb2Se3 film.

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14

Pozina, G., L. L. Yang, Q. X. Zhao, L. Hultman, and P. G. Lagoudakis. "Size dependent carrier recombination in ZnO nanocrystals." Applied Physics Letters 97, no. 13 (September 27, 2010): 131909. http://dx.doi.org/10.1063/1.3494535.

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15

Wang, Ying-Xuan, Shin-Rong Tseng, Hsin-Fei Meng, Kuan-Chen Lee, Chiou-Hua Liu, and Sheng-Fu Horng. "Dark carrier recombination in organic solar cell." Applied Physics Letters 93, no. 13 (September 29, 2008): 133501. http://dx.doi.org/10.1063/1.2972115.

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16

Milward, J. R., W. Ji, A. K. Kar, C. R. Pidgeon, and B. S. Wherrett. "Photogenerated carrier recombination time in bulk ZnSe." Journal of Applied Physics 69, no. 4 (February 15, 1991): 2708–10. http://dx.doi.org/10.1063/1.348644.

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17

Cavigli, Lucia, Franco Bogani, Anna Vinattieri, Lorenzo Cortese, Marcello Colocci, Valentina Faso, and Giovanni Baldi. "Carrier recombination dynamics in anatase TiO2 nanoparticles." Solid State Sciences 12, no. 11 (November 2010): 1877–80. http://dx.doi.org/10.1016/j.solidstatesciences.2010.01.036.

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18

Proctor, Christopher M., Martijn Kuik, and Thuc-Quyen Nguyen. "Charge carrier recombination in organic solar cells." Progress in Polymer Science 38, no. 12 (December 2013): 1941–60. http://dx.doi.org/10.1016/j.progpolymsci.2013.08.008.

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19

Zakirov, M. I., and O. A. Korotchenkov. "Carrier recombination in sonochemically synthesized ZnO powders." Materials Science-Poland 35, no. 1 (April 23, 2017): 211–16. http://dx.doi.org/10.1515/msp-2017-0016.

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AbstractZnO powders with particle size in the nm to μm range have been fabricated by sonochemical method, utilizing zinc acetate and sodium hydroxide as starting materials. Carrier recombination processes in the powders have been investigated using the photoluminescence, FT-IR and surface photovoltage techniques. It has been shown that the photoluminescence spectra exhibit a number of defect-related emission bands which are typically observed in ZnO lattice and which depend on the sonication time. It has been found that the increase of the stirring time results in a faster decay of the photovoltage transients for times shorter than approximately 5 ms. From the obtained data it has been concluded that the sonication modifies the complicated trapping dynamics from volume to surface defects, whereas the fabrication method itself offers a remarkably convenient means of modifying the relative content of the surface-to-volume defect ratio in powder grains and altering the dynamics of photoexcited carriers.

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20

Reufer, Martin, Manfred J. Walter, Pavlos G. Lagoudakis, Anne Beate Hummel, Johanna S. Kolb, Hartmut G. Roskos, Ullrich Scherf, and John M. Lupton. "Spin-conserving carrier recombination in conjugated polymers." Nature Materials 4, no. 4 (March 20, 2005): 340–46. http://dx.doi.org/10.1038/nmat1354.

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21

Giesecke, J. A., and W. Warta. "Understanding carrier lifetime measurements at nonuniform recombination." Applied Physics Letters 104, no. 8 (February 24, 2014): 082103. http://dx.doi.org/10.1063/1.4864789.

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22

Rühle, W. W., and K. Leo. "Carrier Heating in GaAs by Nonradiative Recombination." physica status solidi (b) 149, no. 1 (September 1, 1988): 215–20. http://dx.doi.org/10.1002/pssb.2221490123.

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23

Novikov, S. V. "Charge Carrier Recombination in Amorphous Organic Semiconductors." Russian Journal of Electrochemistry 60, no. 11 (November 2024): 904–12. https://doi.org/10.1134/s1023193524700459.

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24

Cheng, Hsyi-En, Chi-Hsiu Hung, Ing-Song Yu, and Zu-Po Yang. "Strongly Enhancing Photocatalytic Activity of TiO2 Thin Films by Multi-Heterojunction Technique." Catalysts 8, no. 10 (October 6, 2018): 440. http://dx.doi.org/10.3390/catal8100440.

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The photocatalysts of immobilized TiO2 film suffer from high carrier recombination loss when compared to its powder form. Although the TiO2 with rutile-anatase mixed phases has higher carrier separation efficiency than those with pure anatase or rutile phase, the single junction of anatase/rutile cannot avoid the recombination of separated carriers at the interface. In this study, we propose a TiO2/SnO2/Ni multi-heterojunction structure which incorporates both Schottky contact and staggered band alignment to reduce the carrier recombination loss. The low carrier recombination rate of TiO2 film in TiO2/SnO2/Ni multi-heterojunction structure was verified by its low photoluminescence intensity. The faster degradation of methylene blue for TiO2/SnO2/Ni multi-junctions than for the other fabricated structures, which means that the TiO2 films grown on the SnO2/Ni/Ti coated glass have a much higher photocatalytic activity than those grown on the blank glass, SnO2-coated and Ni/Ti-coated glasses, demonstrated its higher performance of photogenerated carrier separation.

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25

Grivickas, Paulius, Stephen Sampayan, Kipras Redeckas, Mikas Vengris, and Vytautas Grivickas. "Probing of Carrier Recombination in n- and p-Type 6H-SiC Using Ultrafast Supercontinuum Pulses." Materials Science Forum 821-823 (June 2015): 245–48. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.245.

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Excess carrier dynamics in 6H-SiC substrates with n- and p-type moderate doping were detected using femtosecond pump-probe measurements with supercontinuum probing. Band-to-band recombination and carrier trapping were determined as the main recombination processes in both materials. Spectral fingerprints corresponding to each of these recombination components were obtained using the global and target analysis. It was shown that, in spite of background doping, the band-to-band recombination in 6H-SiC is dominated by the excess electron absorption component and the carrier trapping is dominated by the excess hole absorption.

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26

Klein, Paul B., Rachael L. Myers-Ward, Kok Keong Lew, Brenda L. VanMil, Charles R. Eddy, D. Kurt Gaskill, Amitesh Shrivastava, and Tangali S. Sudarshan. "Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers." Materials Science Forum 645-648 (April 2010): 203–6. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.203.

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The temperature dependence of the carrier lifetime was measured in n-type 4H-SiC epilayers of varying Z1/2 deep defect concentrations and layer thicknesses in order to investigate the recombination processes controlling the carrier lifetime in low- Z1/2 material. The results indicate that in more recently grown layers with lower deep defect concentrations, surface recombination tends to dominate over carrier capture by other bulk defects. Low-injection lifetime measurements were also found to provide a convenient method to assess the surface band bending and surface trap density in samples with a significant surface recombination rate.

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27

Sogabe, Tomah, Kodai Shiba, and Katsuyoshi Sakamoto. "Hydrodynamic and Energy Transport Model-Based Hot-Carrier Effect in GaAs pin Solar Cell." Electronic Materials 3, no. 2 (May 11, 2022): 185–200. http://dx.doi.org/10.3390/electronicmat3020016.

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The hot-carrier effect and hot-carrier dynamics in GaAs solar cell device performance were investigated. Hot-carrier solar cells based on the conventional operation principle were simulated based on the detailed balance thermodynamic model and the hydrodynamic energy transportation model. A quasi-equivalence between these two models was demonstrated for the first time. In the simulation, a specially designed GaAs solar cell was used, and an increase in the open-circuit voltage was observed by increasing the hot-carrier energy relaxation time. A detailed analysis was presented regarding the spatial distribution of hot-carrier temperature and its interplay with the electric field and three hot-carrier recombination processes: Auger, Shockley–Read–Hall, and radiative recombinations.

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28

Kolesnikova, Irina A., Daniil A. Kobtsev, Ruslan A. Redkin, Vladimir I. Voevodin, Anton V. Tyazhev, Oleg P. Tolbanov, Yury S. Sarkisov, Sergey Yu Sarkisov, and Victor V. Atuchin. "Optical Pump–Terahertz Probe Study of HR GaAs:Cr and SI GaAs:EL2 Structures with Long Charge Carrier Lifetimes." Photonics 8, no. 12 (December 13, 2021): 575. http://dx.doi.org/10.3390/photonics8120575.

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The time dynamics of nonequilibrium charge carrier relaxation processes in SI GaAs:EL2 (semi-insulating gallium arsenide compensated with EL2 centers) and HR GaAs:Cr (high-resistive gallium arsenide compensated with chromium) were studied by the optical pump–terahertz probe technique. Charge carrier lifetimes and contributions from various recombination mechanisms were determined at different injection levels using the model, which takes into account the influence of surface and volume Shockley–Read–Hall (SRH) recombination, interband radiative transitions and interband and trap-assisted Auger recombination. It was found that, in most cases for HR GaAs:Cr and SI GaAs:EL2, Auger recombination mechanisms make the largest contribution to the recombination rate of nonequilibrium charge carriers at injection levels above ~(0.5–3)·1018 cm−3, typical of pump–probe experiments. At a lower photogenerated charge carrier concentration, the SRH recombination prevails. The derived charge carrier lifetimes, due to the SRH recombination, are approximately 1.5 and 25 ns in HR GaAs:Cr and SI GaAs:EL2, respectively. These values are closer to but still lower than the values determined by photoluminescence decay or charge collection efficiency measurements at low injection levels. The obtained results indicate the importance of a proper experimental data analysis when applying terahertz time-resolved spectroscopy to the determination of charge carrier lifetimes in semiconductor crystals intended for the fabrication of devices working at lower injection levels than those at measurements by the optical pump–terahertz probe technique. It was found that the charge carrier lifetime in HR GaAs:Cr is lower than that in SI GaAs:EL2 at injection levels > 1016 cm−3.

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29

Hara, Tomohiko, and Yoshio Ohshita. "Analysis of recombination centers near an interface of a metal–SiO₂–Si structure by double carrier pulse deep-level transient spectroscopy." AIP Advances 12, no. 9 (September 1, 2022): 095316. http://dx.doi.org/10.1063/5.0106319.

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This paper proposes a new double carrier pulse deep-level transient spectroscopy (DC-DLTS) method that is applicable for evaluating metal–insulator–semiconductor (MIS) structures and the recombination centers in carrier-selective contact solar cells. Specifically, this study evaluated recombination characteristics of defects induced in bulk Si near SiO2/Si interfaces by reactive plasma deposition (RPD). In this method, a pulse voltage was first applied to inject majority carriers. Subsequently, a second pulse voltage was applied, which allowed minority carriers to be injected into the MIS structure. With these two types of carrier injections, carriers were recombined in recombination-active defects, and the DC-DLTS spectrum changed. During the injection of minority carriers, some majority carriers were thermally emitted from the defects, resulting in a decrease in the signal intensity. The recombination activity was analyzed by considering the effect of thermal emission on the change in signal intensity. The number of induced defect types and defect properties were estimated using Bayesian optimization. According to the results, three types of electron traps were generated using the RPD process. Based on the DC-DLTS results, defects with energy level 0.57 eV below the conduction band and capture cross section of ∼10−15 cm2 act as recombination centers.

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30

Ichikawa, Shuhei, Koutarou Kawahara, Jun Suda, and Tsunenobu Kimoto. "Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes." Applied Physics Express 5, no. 10 (October 5, 2012): 101301. http://dx.doi.org/10.1143/apex.5.101301.

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31

ZHOU, SHUAI, and JIU-XUN SUN. "MOBILITY DEPENDENT EFFICIENCIES OF ORGANIC BULK-HETEROJUNCTION SOLAR CELLS WITH RECOMBINATION VIA TAIL." International Journal of Modern Physics B 27, no. 28 (October 15, 2013): 1350167. http://dx.doi.org/10.1142/s0217979213501671.

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As a suitable recombination process, recombination via tail state in organic bulk-heterojunction solar cells (OBHJs) is capable of reproducing both dark and illuminated current–voltage curves. The characteristic parameters of OBHJs based on recombination via tail are governed by transportation and extraction efficiency, and both processes are strongly dependent on the charge carrier mobility. Using a macroscopic simulation, we calculate the mobility dependent power conversion efficiency, open-circuit voltage, short-circuit current and fill factor. The open-circuit voltage is determined by not only carrier density n(p), but also by carrier density gradient. Furthermore, open-circuit voltage is more affected by majority charge carriers and less affected by minority ones.

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32

Sakowski, Konrad, Pawel Strak, Pawel Kempisty, Jacek Piechota, Izabella Grzegory, Piotr Perlin, Eva Monroy, Agata Kaminska, and Stanislaw Krukowski. "Coulomb Contribution to Shockley–Read–Hall Recombination." Materials 17, no. 18 (September 18, 2024): 4581. http://dx.doi.org/10.3390/ma17184581.

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A nonradiative recombination channel is proposed, which does not vanish at low temperatures. Defect-mediated nonradiative recombination, known as Shockley–Read–Hall (SRH) recombination, is reformulated to accommodate Coulomb attraction between the charged deep defect and the approaching free carrier. It is demonstrated that this effect may cause a considerable increase in the carrier velocity approaching the recombination center. The effect considerably increases the carrier capture rates. It is demonstrated that, in a typical semiconductor device or semiconductor medium, the SRH recombination rate at low temperatures is much higher and cannot be neglected. This effect renders invalid the standard procedure of estimating the radiative recombination rate by measuring the light output in cryogenic temperatures, as a significant nonradiative recombination channel is still present. We also show that SRH is more effective in the case of low-doped semiconductors, as effective screening by mobile carrier density could reduce the effect.

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33

Sun, Jian Wu, Satoshi Kamiyama, Rositza Yakimova, and Mikael Syväjärvi. "Effect of Surface and Interface Recombination on Carrier Lifetime in 6H-SiC Layers." Materials Science Forum 740-742 (January 2013): 490–93. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.490.

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Carrier lifetimes in 6H-SiC epilayers were investigated by using numerical simulations and micro-wave photoconductivity decay measurements. The measured carrier lifetimes were significantly increasing with an increased thickness up to 200 μm while it stays almost constant in layers thicker than 200 μm. From a comparison of the simulation and experimental results, we found that if the bulk lifetime in 6H-SiC is around a few microseconds, both the surface recombination and interface recombination influence the carrier lifetime in layers with thickness less than 200 μm while only the surface recombination determines the carrier lifetime in layers with thickness more than 200 μm. In samples with varying thicknesses, a bulk lifetime = 2.93 μs and carrier diffusion coefficient D= 2.87 cm2/s were derived from the linear fitting of reciprocal lifetime vs reciprocal square thickness.

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34

CONNELLY, BLAIR C., GRACE D. METCALFE, PAUL H. SHEN, and MICHAEL WRABACK. "TIME-RESOLVED PHOTOLUMINESCENCE STUDY OF TYPE II SUPERLATTICE STRUCTURES WITH VARYING ABSORBER WIDTHS." International Journal of High Speed Electronics and Systems 20, no. 03 (September 2011): 541–48. http://dx.doi.org/10.1142/s0129156411006830.

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We report time-resolved photoluminescence measurements on a set of long-wave infrared InAs / GaSb type II superlattice absorber samples with various widths as a function of temperature and excitation density. Careful analysis of the photoluminescence data determines the minority carrier lifetime and background carrier density as a function of temperature, and provides information on the acceptor energy and density in each sample. Results indicate that carrier lifetime is dominated by Shockley-Read-Hall recombination with a lifetime of ~30 ns at 77 K for all samples. Below 40 K, background carriers are observed to freeze-out in conjunction with increased contributions from radiative recombination. An acceptor energy level of ~20 meV above the valance band is also determined for all samples. Variations of carrier lifetime between each sample do not strongly correlate with absorber width, indicating that barrier recombination is not the dominant factor limiting the carrier lifetime in our samples.

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35

Li, C., E. B. Stokes, and E. Armour. "Optical Characterization of Carrier Localization, Carrier Transportation and Carrier Recombination in Blue-Emitting InGaN/GaN MQWs." ECS Journal of Solid State Science and Technology 4, no. 2 (November 6, 2014): R10—R13. http://dx.doi.org/10.1149/2.0011502jss.

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Ding, Tao, Guijie Liang, Junhui Wang, and Kaifeng Wu. "Carrier-doping as a tool to probe the electronic structure and multi-carrier recombination dynamics in heterostructured colloidal nanocrystals." Chemical Science 9, no. 36 (2018): 7253–60. http://dx.doi.org/10.1039/c8sc01926f.

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37

Petrovic, Jovana, Petar Matavulj, Qi Difei, and Sandra Selmic. "Charge carrier recombination in the ITO/PEDOT:PSS/MEH-PPV/Al photodetector." Chemical Industry 63, no. 3 (2009): 177–81. http://dx.doi.org/10.2298/hemind0903177p.

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Abstract:

In this paper we investigate charge carrier recombination processes in polymer based photodetector ITO/PEDOT:PSS/MEH-PPV/Al. The major carriers are the hole polarons created by the photoexcitation in the active MEH-PPV film. The model used in this paper is based on the continuity equation and drift-diffusion equation for hole polarons. We assume the Poole-Frenkel expression for field dependence of the hole polaron mobility. The internal quantum efficiency dependence on incident photon flux density, incident light wavelength and applied electric field is included in the model. The simulated photocurrent density spectra for two different, assumed, recombination mechanisms, linear (monomolecular) and square (bimolecular) is compared with our experimental results. The bimolecular recombination mechanism applied in our model is assumed to be of Langevin type. The agreement between the measured and the calculated data unambiguously indicate that the hole polaron recombination mechanism in the MEH-PPV film is bimolecular with bimolecular rate constant depending on the external electric field. For the established recombination mechanism the theoretical prediction of the photocurrent density spectra shows excellent agreement with the measured spectra in wide range of inverse bias voltages (from 0 to -8 V).

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Park, Kwangwook, Sooraj Ravindran, Seokjin Kang, Jung-Wook Min, Hyeong-Yong Hwang, Young-Dahl Jho, Yong-Ryun Jo, Bong-Joong Kim, Jongmin Kim, and Yong-Tak Lee. "Detailed carrier recombination in lateral composition modulation structure." Applied Physics Express 11, no. 9 (August 3, 2018): 095801. http://dx.doi.org/10.7567/apex.11.095801.

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Hsu, S. C., and H. S. Kwok. "Picosecond carrier recombination dynamics of semiconductor‐doped glasses." Applied Physics Letters 50, no. 25 (June 22, 1987): 1782–84. http://dx.doi.org/10.1063/1.97745.

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Kobeleva, S. P., I. M. Anfimov, and I. V. Schemerov. "A device for free-carrier recombination lifetime measurements." Instruments and Experimental Techniques 59, no. 3 (May 2016): 420–24. http://dx.doi.org/10.1134/s0020441216030064.

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Kuciauskas, Darius, Stuart Farrell, Pat Dippo, John Moseley, Helio Moutinho, Jian V. Li, A. M. Allende Motz, et al. "Charge-carrier transport and recombination in heteroepitaxial CdTe." Journal of Applied Physics 116, no. 12 (September 28, 2014): 123108. http://dx.doi.org/10.1063/1.4896673.

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Harrison, Walter A. "Diffusion and carrier recombination by interstitials in silicon." Physical Review B 57, no. 16 (April 15, 1998): 9727–35. http://dx.doi.org/10.1103/physrevb.57.9727.

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Hofacker, A., J. O. Oelerich, A. V. Nenashev, F. Gebhard, and S. D. Baranovskii. "Theory to carrier recombination in organic disordered semiconductors." Journal of Applied Physics 115, no. 22 (June 14, 2014): 223713. http://dx.doi.org/10.1063/1.4883318.

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Gaubas, E., A. Uleckas, J. Vanhellemont, and W. Geens. "Metal implants-dependent carrier recombination characteristics in Ge." Materials Science in Semiconductor Processing 11, no. 5-6 (October 2008): 291–94. http://dx.doi.org/10.1016/j.mssp.2008.07.009.

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van der Voort, M., G. D. J. Smit, A. V. Akimov, and J. I. Dijkhuis. "Phonon generation by carrier recombination in a-Si:H." Physica B: Condensed Matter 263-264 (March 1999): 283–85. http://dx.doi.org/10.1016/s0921-4526(98)01227-7.

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Bhaskar, Prashant, Alexander W. Achtstein, Martien J. W. Vermeulen, and Laurens D. A. Siebbeles. "Radiatively Dominated Charge Carrier Recombination in Black Phosphorus." Journal of Physical Chemistry C 120, no. 25 (June 16, 2016): 13836–42. http://dx.doi.org/10.1021/acs.jpcc.6b04741.

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Zhang, Wei, Sebastian Lehmann, Kilian Mergenthaler, Jesper Wallentin, Magnus T. Borgström, Mats-Erik Pistol, and Arkady Yartsev. "Carrier Recombination Dynamics in Sulfur-Doped InP Nanowires." Nano Letters 15, no. 11 (October 9, 2015): 7238–44. http://dx.doi.org/10.1021/acs.nanolett.5b02022.

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Schilz, J., G. Nimtz, C. Geibel, and J. Ziegler. "Carrier recombination in p-Hg0.8Cd0.2Te and n-Hg0.7Cd0.3Te." Journal of Crystal Growth 86, no. 1-4 (January 1988): 677–81. http://dx.doi.org/10.1016/0022-0248(90)90794-l.

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Sher, Meng-Ju, Christie B. Simmons, Jacob J. Krich, Austin J. Akey, Mark T. Winkler, Daniel Recht, Tonio Buonassisi, Michael J. Aziz, and Aaron M. Lindenberg. "Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon." Applied Physics Letters 105, no. 5 (August 4, 2014): 053905. http://dx.doi.org/10.1063/1.4892357.

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Zhang, Wei, Xulu Zeng, Xiaojun Su, Xianshao Zou, Pierre-Adrien Mante, Magnus T. Borgström, and Arkady Yartsev. "Carrier Recombination Processes in Gallium Indium Phosphide Nanowires." Nano Letters 17, no. 7 (June 30, 2017): 4248–54. http://dx.doi.org/10.1021/acs.nanolett.7b01159.

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