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Journal articles on the topic 'Carrier recombination'

Author: Grafiati

Published: 4 June 2021

Last updated: 28 January 2023

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1

Moses, D., and A. J. Heeger. "Fast transient photoconductivity in polydiacetylene: carrier photogeneration, carrier mobility and carrier recombination." Journal of Physics: Condensed Matter 1, no. 40 (October 9, 1989): 7395–405. http://dx.doi.org/10.1088/0953-8984/1/40/013.

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2

deQuilettes, Dane W., Kyle Frohna, David Emin, Thomas Kirchartz, Vladimir Bulovic, David S. Ginger, and Samuel D. Stranks. "Charge-Carrier Recombination in Halide Perovskites." Chemical Reviews 119, no. 20 (September 9, 2019): 11007–19. http://dx.doi.org/10.1021/acs.chemrev.9b00169.

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3

Volkov, Victor V., Z. L. Wang, and B. S. Zou. "Carrier recombination in clusters of NiO." Chemical Physics Letters 337, no. 1-3 (March 2001): 117–24. http://dx.doi.org/10.1016/s0009-2614(01)00191-9.

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4

Konin, A. "Interface recombination influence on carrier transport." Semiconductor Science and Technology 28, no. 2 (December 27, 2012): 025003. http://dx.doi.org/10.1088/0268-1242/28/2/025003.

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5

Juška, Gytis, Kęstutis Arlauskas, and Kristijonas Genevičius. "Charge carrier transport and recombination in disordered materials." Lithuanian Journal of Physics 56, no. 3 (October 17, 2016): 182–89. http://dx.doi.org/10.3952/physics.v56i3.3367.

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In this brief review the methods for investigation of charge carrier transport and recombination in thin layers of disordered materials and the obtained results are discussed. The method of charge carrier extraction by linearly increasing voltage (CELIV) is useful for the determination of mobility, bulk conductivity and density of equilibrium charge carriers. The extraction of photogenerated charge carriers (photo-CELIV) allows one to independently investigate relaxation of both the mobility and density of photogenerated charge carriers. The extraction of injected charge carriers (i-CELIV) is effective for the independent investigation of transport peculiarities of both injected holes and electrons in bulk heterojunctions. For the investigation of charge carrier recombination we proposed integral time-of-flight (TOF) and double-injection (DI) current transient methods. The methods allowed us to obtain the following significant results: to determine the reason of the conductivity dependence on electric field strength and temperature in the amorphous and microcrystalline hydrogenated silicon and π-conjugated polymers, the time dependent Langevin recombination, the impact of morphology on charge carrier mobility, the reason of reduced Langevin recombination in RR-PHT (regioregular poly(3-hexylthiophene))/PCBM (1-(3-methoxycarbonyl)propyl-1phenyl-[6,6]-methanofullerene) bulk heterojunction structures – 2D Langevin recombination; and to evaluate that the mobility of holes is predetermined by off-diagonal dispersion in poly-PbO.

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6

Shura, Megersa Wodajo. "A Simple Method to Differentiate between Free-Carrier Recombination and Trapping Centers in the Bandgap of the p-Type Semiconductor." Advances in Materials Science and Engineering 2021 (September 7, 2021): 1–13. http://dx.doi.org/10.1155/2021/5568880.

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In this research, the ranges of the localized states in which the recombination and the trapping rates of free carriers dominate the entire transition rates of free carriers in the bandgap of the p-type semiconductor are described. Applying the Shockley–Read–Hall model to a p-type material under a low injection level, the expressions for the recombination rates, the trapping rates, and the excess carrier lifetimes (recombination and trapping) were described as functions of the localized state energies. Next, the very important quantities called the excess carriers’ trapping ratios were described as functions of the localized state energies. Variations of the magnitudes of the excess carriers’ trapping ratios with the localized state energies enable us to categorize the localized states in the bandgap as the recombination, the trapping, the acceptor, and the donor levels. Effects of the majority and the minority carriers’ trapping on the excess carrier lifetimes are also evaluated at different localized energy levels. The obtained results reveal that only excess minority trapping affects the excess carrier lifetimes, and excess majority carrier trapping has no effect.

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7

Pozina, G., L. L. Yang, Q. X. Zhao, L. Hultman, and P. G. Lagoudakis. "Size dependent carrier recombination in ZnO nanocrystals." Applied Physics Letters 97, no. 13 (September 27, 2010): 131909. http://dx.doi.org/10.1063/1.3494535.

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8

Wang, Ying-Xuan, Shin-Rong Tseng, Hsin-Fei Meng, Kuan-Chen Lee, Chiou-Hua Liu, and Sheng-Fu Horng. "Dark carrier recombination in organic solar cell." Applied Physics Letters 93, no. 13 (September 29, 2008): 133501. http://dx.doi.org/10.1063/1.2972115.

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9

Milward, J. R., W. Ji, A. K. Kar, C. R. Pidgeon, and B. S. Wherrett. "Photogenerated carrier recombination time in bulk ZnSe." Journal of Applied Physics 69, no. 4 (February 15, 1991): 2708–10. http://dx.doi.org/10.1063/1.348644.

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10

Cavigli, Lucia, Franco Bogani, Anna Vinattieri, Lorenzo Cortese, Marcello Colocci, Valentina Faso, and Giovanni Baldi. "Carrier recombination dynamics in anatase TiO2 nanoparticles." Solid State Sciences 12, no. 11 (November 2010): 1877–80. http://dx.doi.org/10.1016/j.solidstatesciences.2010.01.036.

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11

Proctor, Christopher M., Martijn Kuik, and Thuc-Quyen Nguyen. "Charge carrier recombination in organic solar cells." Progress in Polymer Science 38, no. 12 (December 2013): 1941–60. http://dx.doi.org/10.1016/j.progpolymsci.2013.08.008.

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12

Zakirov, M. I., and O. A. Korotchenkov. "Carrier recombination in sonochemically synthesized ZnO powders." Materials Science-Poland 35, no. 1 (April 23, 2017): 211–16. http://dx.doi.org/10.1515/msp-2017-0016.

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AbstractZnO powders with particle size in the nm to μm range have been fabricated by sonochemical method, utilizing zinc acetate and sodium hydroxide as starting materials. Carrier recombination processes in the powders have been investigated using the photoluminescence, FT-IR and surface photovoltage techniques. It has been shown that the photoluminescence spectra exhibit a number of defect-related emission bands which are typically observed in ZnO lattice and which depend on the sonication time. It has been found that the increase of the stirring time results in a faster decay of the photovoltage transients for times shorter than approximately 5 ms. From the obtained data it has been concluded that the sonication modifies the complicated trapping dynamics from volume to surface defects, whereas the fabrication method itself offers a remarkably convenient means of modifying the relative content of the surface-to-volume defect ratio in powder grains and altering the dynamics of photoexcited carriers.

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13

Reufer, Martin, Manfred J. Walter, Pavlos G. Lagoudakis, Anne Beate Hummel, Johanna S. Kolb, Hartmut G. Roskos, Ullrich Scherf, and John M. Lupton. "Spin-conserving carrier recombination in conjugated polymers." Nature Materials 4, no. 4 (March 20, 2005): 340–46. http://dx.doi.org/10.1038/nmat1354.

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14

Giesecke, J. A., and W. Warta. "Understanding carrier lifetime measurements at nonuniform recombination." Applied Physics Letters 104, no. 8 (February 24, 2014): 082103. http://dx.doi.org/10.1063/1.4864789.

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15

Rühle, W. W., and K. Leo. "Carrier Heating in GaAs by Nonradiative Recombination." physica status solidi (b) 149, no. 1 (September 1, 1988): 215–20. http://dx.doi.org/10.1002/pssb.2221490123.

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16

Du, Sichao, Juxin Yin, Hao Xie, Yunlei Sun, Tao Fang, Yu Wang, Jing Li, et al. "Auger scattering dynamic of photo-excited hot carriers in nano-graphite film." Applied Physics Letters 121, no. 18 (October 31, 2022): 181104. http://dx.doi.org/10.1063/5.0116720.

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Charge carrier scattering channels in graphite bridging its valence and conduction band offer an efficient Auger recombination dynamic to promote low energy charge carriers to higher energy states. It is of importance to answer the question whether a large number of charge carriers can be promoted to higher energy states to enhance the quantum efficiency of photodetectors. Here, we present an experimental demonstration of an effective Auger recombination process in the photo-excited nano-graphite film. The time-resolved hot carrier thermalization was analyzed based on the energy dissipation via the Auger scattering channels. We split the Auger recombination occurrence centered at 0.40 eV energy state into scattering and recombination parts, for characterizing the scattering rate in the conduction band and the recombination rate toward the valence band. The scattering time with respect to the energy state was extracted as 8 ps · eV−1, while the recombination time with respect to the energy state was extracted as 24 ps · eV−1. Our study indicates a 300 fs delay between the hot carrier recombination and generation, leading to a 105 ps−1 · cm−3 Auger scattering efficiency. The observed duration for the Auger recombination to generate hot carriers is prolonged for 1 ps, due to the hot carriers energy relaxation bottleneck with optical-phonons in the nano-graphite. The presented analytic expression gives valuable insights into the Auger recombination dynamic to estimate its most efficient energy regime for mid-infrared photodetection.

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17

Chung, Gil Yong, Mark J. Loboda, M. J. Marinella, D. K. Schroder, Paul B. Klein, Tamara Isaacs-Smith, and J. W. Williams. "Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers." Materials Science Forum 600-603 (September 2008): 485–88. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.485.

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Compared to silicon, there have been relatively few comparative studies of recombination and carrier lifetimes in SiC. For the first time, both generation and recombination carrier lifetimes are reported from the same areas in 20 m thick 4H SiC n-/n+ epi-wafer structures. The ratio of the generation to recombination lifetime is much different in SiC compared to Si. Activation energy calculated from SiC generation lifetimes shows that traps with energy levels near mid-gap dominate the generation lifetime. Comparison of both generation and recombination lifetimes and dislocation counts measured in the device area show no correlation in either case.

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18

Cheng, Hsyi-En, Chi-Hsiu Hung, Ing-Song Yu, and Zu-Po Yang. "Strongly Enhancing Photocatalytic Activity of TiO2 Thin Films by Multi-Heterojunction Technique." Catalysts 8, no. 10 (October 6, 2018): 440. http://dx.doi.org/10.3390/catal8100440.

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The photocatalysts of immobilized TiO2 film suffer from high carrier recombination loss when compared to its powder form. Although the TiO2 with rutile-anatase mixed phases has higher carrier separation efficiency than those with pure anatase or rutile phase, the single junction of anatase/rutile cannot avoid the recombination of separated carriers at the interface. In this study, we propose a TiO2/SnO2/Ni multi-heterojunction structure which incorporates both Schottky contact and staggered band alignment to reduce the carrier recombination loss. The low carrier recombination rate of TiO2 film in TiO2/SnO2/Ni multi-heterojunction structure was verified by its low photoluminescence intensity. The faster degradation of methylene blue for TiO2/SnO2/Ni multi-junctions than for the other fabricated structures, which means that the TiO2 films grown on the SnO2/Ni/Ti coated glass have a much higher photocatalytic activity than those grown on the blank glass, SnO2-coated and Ni/Ti-coated glasses, demonstrated its higher performance of photogenerated carrier separation.

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19

Eldridge, Peter S., Jolie C. Blake, and Lars Gundlach. "Ultrafast Probe of Carrier Diffusion and Nongeminate Processes in a Single CdSSe Nanowire." Journal of Spectroscopy 2015 (2015): 1–6. http://dx.doi.org/10.1155/2015/574754.

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We measure ultrafast carrier dynamics in a single CdSSe nanowire at different excitation fluences using an ultrafast Kerr-gated microscope. The time-resolved emission exhibits a dependence on excitation fluence, with the onset of the emission varying on the picosecond time scale with increasing laser power. By fitting the emission to a model for amplified spontaneous emission (ASE), we are able to extract the nonradiative carrier recombination lifetime and nongeminate recombination constant. The extracted nongeminate recombination constant suggests that our measurement technique allows the access to the nondiffusion limited recombination regime in nanowires with low carrier mobility.

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20

Ichikawa, Shuhei, Koutarou Kawahara, Jun Suda, and Tsunenobu Kimoto. "Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes." Applied Physics Express 5, no. 10 (October 5, 2012): 101301. http://dx.doi.org/10.1143/apex.5.101301.

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21

Kolesnikova, Irina A., Daniil A. Kobtsev, Ruslan A. Redkin, Vladimir I. Voevodin, Anton V. Tyazhev, Oleg P. Tolbanov, Yury S. Sarkisov, Sergey Yu Sarkisov, and Victor V. Atuchin. "Optical Pump–Terahertz Probe Study of HR GaAs:Cr and SI GaAs:EL2 Structures with Long Charge Carrier Lifetimes." Photonics 8, no. 12 (December 13, 2021): 575. http://dx.doi.org/10.3390/photonics8120575.

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The time dynamics of nonequilibrium charge carrier relaxation processes in SI GaAs:EL2 (semi-insulating gallium arsenide compensated with EL2 centers) and HR GaAs:Cr (high-resistive gallium arsenide compensated with chromium) were studied by the optical pump–terahertz probe technique. Charge carrier lifetimes and contributions from various recombination mechanisms were determined at different injection levels using the model, which takes into account the influence of surface and volume Shockley–Read–Hall (SRH) recombination, interband radiative transitions and interband and trap-assisted Auger recombination. It was found that, in most cases for HR GaAs:Cr and SI GaAs:EL2, Auger recombination mechanisms make the largest contribution to the recombination rate of nonequilibrium charge carriers at injection levels above ~(0.5–3)·1018 cm−3, typical of pump–probe experiments. At a lower photogenerated charge carrier concentration, the SRH recombination prevails. The derived charge carrier lifetimes, due to the SRH recombination, are approximately 1.5 and 25 ns in HR GaAs:Cr and SI GaAs:EL2, respectively. These values are closer to but still lower than the values determined by photoluminescence decay or charge collection efficiency measurements at low injection levels. The obtained results indicate the importance of a proper experimental data analysis when applying terahertz time-resolved spectroscopy to the determination of charge carrier lifetimes in semiconductor crystals intended for the fabrication of devices working at lower injection levels than those at measurements by the optical pump–terahertz probe technique. It was found that the charge carrier lifetime in HR GaAs:Cr is lower than that in SI GaAs:EL2 at injection levels > 1016 cm−3.

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22

Grivickas, Paulius, Stephen Sampayan, Kipras Redeckas, Mikas Vengris, and Vytautas Grivickas. "Probing of Carrier Recombination in n- and p-Type 6H-SiC Using Ultrafast Supercontinuum Pulses." Materials Science Forum 821-823 (June 2015): 245–48. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.245.

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Excess carrier dynamics in 6H-SiC substrates with n- and p-type moderate doping were detected using femtosecond pump-probe measurements with supercontinuum probing. Band-to-band recombination and carrier trapping were determined as the main recombination processes in both materials. Spectral fingerprints corresponding to each of these recombination components were obtained using the global and target analysis. It was shown that, in spite of background doping, the band-to-band recombination in 6H-SiC is dominated by the excess electron absorption component and the carrier trapping is dominated by the excess hole absorption.

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23

Klein, Paul B., Rachael L. Myers-Ward, Kok Keong Lew, Brenda L. VanMil, Charles R. Eddy, D. Kurt Gaskill, Amitesh Shrivastava, and Tangali S. Sudarshan. "Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers." Materials Science Forum 645-648 (April 2010): 203–6. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.203.

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The temperature dependence of the carrier lifetime was measured in n-type 4H-SiC epilayers of varying Z1/2 deep defect concentrations and layer thicknesses in order to investigate the recombination processes controlling the carrier lifetime in low- Z1/2 material. The results indicate that in more recently grown layers with lower deep defect concentrations, surface recombination tends to dominate over carrier capture by other bulk defects. Low-injection lifetime measurements were also found to provide a convenient method to assess the surface band bending and surface trap density in samples with a significant surface recombination rate.

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24

Hara, Tomohiko, and Yoshio Ohshita. "Analysis of recombination centers near an interface of a metal–SiO₂–Si structure by double carrier pulse deep-level transient spectroscopy." AIP Advances 12, no. 9 (September 1, 2022): 095316. http://dx.doi.org/10.1063/5.0106319.

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This paper proposes a new double carrier pulse deep-level transient spectroscopy (DC-DLTS) method that is applicable for evaluating metal–insulator–semiconductor (MIS) structures and the recombination centers in carrier-selective contact solar cells. Specifically, this study evaluated recombination characteristics of defects induced in bulk Si near SiO2/Si interfaces by reactive plasma deposition (RPD). In this method, a pulse voltage was first applied to inject majority carriers. Subsequently, a second pulse voltage was applied, which allowed minority carriers to be injected into the MIS structure. With these two types of carrier injections, carriers were recombined in recombination-active defects, and the DC-DLTS spectrum changed. During the injection of minority carriers, some majority carriers were thermally emitted from the defects, resulting in a decrease in the signal intensity. The recombination activity was analyzed by considering the effect of thermal emission on the change in signal intensity. The number of induced defect types and defect properties were estimated using Bayesian optimization. According to the results, three types of electron traps were generated using the RPD process. Based on the DC-DLTS results, defects with energy level 0.57 eV below the conduction band and capture cross section of ∼10−15 cm2 act as recombination centers.

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25

Sogabe, Tomah, Kodai Shiba, and Katsuyoshi Sakamoto. "Hydrodynamic and Energy Transport Model-Based Hot-Carrier Effect in GaAs pin Solar Cell." Electronic Materials 3, no. 2 (May 11, 2022): 185–200. http://dx.doi.org/10.3390/electronicmat3020016.

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The hot-carrier effect and hot-carrier dynamics in GaAs solar cell device performance were investigated. Hot-carrier solar cells based on the conventional operation principle were simulated based on the detailed balance thermodynamic model and the hydrodynamic energy transportation model. A quasi-equivalence between these two models was demonstrated for the first time. In the simulation, a specially designed GaAs solar cell was used, and an increase in the open-circuit voltage was observed by increasing the hot-carrier energy relaxation time. A detailed analysis was presented regarding the spatial distribution of hot-carrier temperature and its interplay with the electric field and three hot-carrier recombination processes: Auger, Shockley–Read–Hall, and radiative recombinations.

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26

Li, C., E. B. Stokes, and E. Armour. "Optical Characterization of Carrier Localization, Carrier Transportation and Carrier Recombination in Blue-Emitting InGaN/GaN MQWs." ECS Journal of Solid State Science and Technology 4, no. 2 (November 6, 2014): R10—R13. http://dx.doi.org/10.1149/2.0011502jss.

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27

Park, Kwangwook, Sooraj Ravindran, Seokjin Kang, Jung-Wook Min, Hyeong-Yong Hwang, Young-Dahl Jho, Yong-Ryun Jo, Bong-Joong Kim, Jongmin Kim, and Yong-Tak Lee. "Detailed carrier recombination in lateral composition modulation structure." Applied Physics Express 11, no. 9 (August 3, 2018): 095801. http://dx.doi.org/10.7567/apex.11.095801.

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28

Hsu, S. C., and H. S. Kwok. "Picosecond carrier recombination dynamics of semiconductor‐doped glasses." Applied Physics Letters 50, no. 25 (June 22, 1987): 1782–84. http://dx.doi.org/10.1063/1.97745.

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29

Kobeleva, S. P., I. M. Anfimov, and I. V. Schemerov. "A device for free-carrier recombination lifetime measurements." Instruments and Experimental Techniques 59, no. 3 (May 2016): 420–24. http://dx.doi.org/10.1134/s0020441216030064.

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30

Kuciauskas, Darius, Stuart Farrell, Pat Dippo, John Moseley, Helio Moutinho, Jian V. Li, A. M. Allende Motz, et al. "Charge-carrier transport and recombination in heteroepitaxial CdTe." Journal of Applied Physics 116, no. 12 (September 28, 2014): 123108. http://dx.doi.org/10.1063/1.4896673.

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31

Harrison, Walter A. "Diffusion and carrier recombination by interstitials in silicon." Physical Review B 57, no. 16 (April 15, 1998): 9727–35. http://dx.doi.org/10.1103/physrevb.57.9727.

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32

Hofacker, A., J. O. Oelerich, A. V. Nenashev, F. Gebhard, and S. D. Baranovskii. "Theory to carrier recombination in organic disordered semiconductors." Journal of Applied Physics 115, no. 22 (June 14, 2014): 223713. http://dx.doi.org/10.1063/1.4883318.

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33

Gaubas, E., A. Uleckas, J. Vanhellemont, and W. Geens. "Metal implants-dependent carrier recombination characteristics in Ge." Materials Science in Semiconductor Processing 11, no. 5-6 (October 2008): 291–94. http://dx.doi.org/10.1016/j.mssp.2008.07.009.

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34

van der Voort, M., G. D. J. Smit, A. V. Akimov, and J. I. Dijkhuis. "Phonon generation by carrier recombination in a-Si:H." Physica B: Condensed Matter 263-264 (March 1999): 283–85. http://dx.doi.org/10.1016/s0921-4526(98)01227-7.

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35

Bhaskar, Prashant, Alexander W. Achtstein, Martien J. W. Vermeulen, and Laurens D. A. Siebbeles. "Radiatively Dominated Charge Carrier Recombination in Black Phosphorus." Journal of Physical Chemistry C 120, no. 25 (June 16, 2016): 13836–42. http://dx.doi.org/10.1021/acs.jpcc.6b04741.

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36

Zhang, Wei, Sebastian Lehmann, Kilian Mergenthaler, Jesper Wallentin, Magnus T. Borgström, Mats-Erik Pistol, and Arkady Yartsev. "Carrier Recombination Dynamics in Sulfur-Doped InP Nanowires." Nano Letters 15, no. 11 (October 9, 2015): 7238–44. http://dx.doi.org/10.1021/acs.nanolett.5b02022.

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37

Schilz, J., G. Nimtz, C. Geibel, and J. Ziegler. "Carrier recombination in p-Hg0.8Cd0.2Te and n-Hg0.7Cd0.3Te." Journal of Crystal Growth 86, no. 1-4 (January 1988): 677–81. http://dx.doi.org/10.1016/0022-0248(90)90794-l.

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38

Sher, Meng-Ju, Christie B. Simmons, Jacob J. Krich, Austin J. Akey, Mark T. Winkler, Daniel Recht, Tonio Buonassisi, Michael J. Aziz, and Aaron M. Lindenberg. "Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon." Applied Physics Letters 105, no. 5 (August 4, 2014): 053905. http://dx.doi.org/10.1063/1.4892357.

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39

Zhang, Wei, Xulu Zeng, Xiaojun Su, Xianshao Zou, Pierre-Adrien Mante, Magnus T. Borgström, and Arkady Yartsev. "Carrier Recombination Processes in Gallium Indium Phosphide Nanowires." Nano Letters 17, no. 7 (June 30, 2017): 4248–54. http://dx.doi.org/10.1021/acs.nanolett.7b01159.

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40

Leepattarapongpan, Chana, Toempong Phetchakul, Naritchapan Penpondee, Putapon Pengpad, Ekalak Chaowicharat, Charndet Hruanun, and Amporn Poyai. "Magnetotransistor Based on the Carrier Recombination—Deflection Effect." IEEE Sensors Journal 10, no. 2 (February 2010): 294–99. http://dx.doi.org/10.1109/jsen.2009.2033812.

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41

Adomaitis, E., K. Grigoras, and A. Krotkus. "Minority carrier recombination in p-type CdxHg1-xTe." Semiconductor Science and Technology 5, no. 8 (August 1, 1990): 836–41. http://dx.doi.org/10.1088/0268-1242/5/8/006.

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42

Lombardo, Christopher, and Ananth Dodabalapur. "Nongeminate carrier recombination rates in organic solar cells." Applied Physics Letters 97, no. 23 (December 6, 2010): 233302. http://dx.doi.org/10.1063/1.3524025.

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43

Mourchid, A., D. Hulin, R. Vanderhaghen, and P. M. Fauchet. "Hot carrier relaxation and recombination in amorphous semiconductors." Semiconductor Science and Technology 7, no. 3B (March 1, 1992): B302—B304. http://dx.doi.org/10.1088/0268-1242/7/3b/075.

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44

Oelgart, G., G. Grummt, M. Proctor, and F. K. Reinhart. "Minority carrier recombination in post-growth hydrogenated AlGaAs." Semiconductor Science and Technology 8, no. 2 (February 1, 1993): 224–29. http://dx.doi.org/10.1088/0268-1242/8/2/013.

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45

Stievenard, D., and J. C. Bourgoin. "Defect-enhanced annealing by carrier recombination in GaAs." Physical Review B 33, no. 12 (June 15, 1986): 8410–15. http://dx.doi.org/10.1103/physrevb.33.8410.

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46

Chhetri, Pushpa, Krishna K. Barakoti, and Mario A. Alpuche-Aviles. "Control of Carrier Recombination on ZnO Nanowires Photoelectrochemistry." Journal of Physical Chemistry C 119, no. 3 (January 8, 2015): 1506–16. http://dx.doi.org/10.1021/jp5071067.

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47

Filippov, I. M., L. A. Kazakevich, P. F. Lugakov, and V. V. Shusha. "The Charge Carrier Recombination Processes in Dislocated Silicon." physica status solidi (a) 96, no. 2 (August 16, 1986): 527–31. http://dx.doi.org/10.1002/pssa.2210960219.

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48

Koch, F., R. Mitdank, G. Oelgart, and C. Chlupsa. "Excess carrier recombination in indirect-gap GaAs1−xPx:N." Physica Status Solidi (a) 110, no. 1 (November 16, 1988): 197–204. http://dx.doi.org/10.1002/pssa.2211100119.

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Fischer, Ralf, Ernst O. Göbel, and Gert Noll. "Picosecond non-geminate carrier recombination in a-Si:H." Journal of Non-Crystalline Solids 97-98 (December 1987): 591–94. http://dx.doi.org/10.1016/0022-3093(87)90138-4.

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Puhlmann, N., G. Oelgart, and V. Gottschalch. "Temperature Dependent Minority Carrier Recombination on GaAs: Sn." Physica Status Solidi (a) 125, no. 2 (June 16, 1991): 731–39. http://dx.doi.org/10.1002/pssa.2211250232.

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