Relevant bibliographies by topics / Carrier recombination

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Carrier recombination'

Author: Grafiati
Published: 4 June 2021
Last updated: 11 January 2025

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Journal articles on the topic "Carrier recombination"

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Musa, Hiba J., and Ahmed H. Flayyih. "Carrier dynamic and carrier Temperature in Quantum Well." University of Thi-Qar Journal of Science 9, no. 1 (September 23, 2022): 102–7. http://dx.doi.org/10.32792/utq/utjsci.v9i1.889.

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Carrier temperature in quantum well (QW)semiconductor optical amplifier (SOA) has been studied,depending density matrix theory (DMT) and carrier dynamicin quantum well. The effect of volume carrier density, dopingon effect, pulse shape, nonradiative relaxation, and nonlineargain coefficients on the carrier temperature and carrierheating has been investigated. The theoretical results showthat; the time recovery increases straightforward withnonradiative recombination, where the relaxation time ofnonradiative recombination reduces the rate of carrieroccupation in quantum states. Also, the carrier temperatureincreases with carrier density, free carrier absorption, carrierheating lifetime and reduces with pulse shape of pump pulses
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Moses, D., and A. J. Heeger. "Fast transient photoconductivity in polydiacetylene: carrier photogeneration, carrier mobility and carrier recombination." Journal of Physics: Condensed Matter 1, no. 40 (October 9, 1989): 7395–405. http://dx.doi.org/10.1088/0953-8984/1/40/013.

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deQuilettes, Dane W., Kyle Frohna, David Emin, Thomas Kirchartz, Vladimir Bulovic, David S. Ginger, and Samuel D. Stranks. "Charge-Carrier Recombination in Halide Perovskites." Chemical Reviews 119, no. 20 (September 9, 2019): 11007–19. http://dx.doi.org/10.1021/acs.chemrev.9b00169.

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Volkov, Victor V., Z. L. Wang, and B. S. Zou. "Carrier recombination in clusters of NiO." Chemical Physics Letters 337, no. 1-3 (March 2001): 117–24. http://dx.doi.org/10.1016/s0009-2614(01)00191-9.

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Konin, A. "Interface recombination influence on carrier transport." Semiconductor Science and Technology 28, no. 2 (December 27, 2012): 025003. http://dx.doi.org/10.1088/0268-1242/28/2/025003.

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Smaili, Idris H., and Ghazi Ben Hmida. "A Review of Minority Carrier Recombination Lifetime Measurements." International Journal for Research in Applied Science and Engineering Technology 11, no. 5 (May 31, 2023): 1351–63. http://dx.doi.org/10.22214/ijraset.2023.51725.

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Abstract: The recombination lifetime of minority carriers is a critical parameter in semiconductor devices such as photovoltaic cells since it controls the efficiency of such devices. Many techniques have been developed to accomplish recombination measurements and thereby test semiconductor devices' efficiencies. Recombination lifetime average values differ according to semiconductor device type; thus, choosing an appropriate technique is important. This paper studies the concept of excess minority carrier lifetime and its calculations. It also investigates the advantages, limitations, and capabilities of the most common recombination lifetime measurement techniques. A chart was drawn with all known measurement methods to make it easier to understand the relation between these techniques.
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Shura, Megersa Wodajo. "A Simple Method to Differentiate between Free-Carrier Recombination and Trapping Centers in the Bandgap of the p-Type Semiconductor." Advances in Materials Science and Engineering 2021 (September 7, 2021): 1–13. http://dx.doi.org/10.1155/2021/5568880.

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In this research, the ranges of the localized states in which the recombination and the trapping rates of free carriers dominate the entire transition rates of free carriers in the bandgap of the p-type semiconductor are described. Applying the Shockley–Read–Hall model to a p-type material under a low injection level, the expressions for the recombination rates, the trapping rates, and the excess carrier lifetimes (recombination and trapping) were described as functions of the localized state energies. Next, the very important quantities called the excess carriers’ trapping ratios were described as functions of the localized state energies. Variations of the magnitudes of the excess carriers’ trapping ratios with the localized state energies enable us to categorize the localized states in the bandgap as the recombination, the trapping, the acceptor, and the donor levels. Effects of the majority and the minority carriers’ trapping on the excess carrier lifetimes are also evaluated at different localized energy levels. The obtained results reveal that only excess minority trapping affects the excess carrier lifetimes, and excess majority carrier trapping has no effect.
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Du, Sichao, Juxin Yin, Hao Xie, Yunlei Sun, Tao Fang, Yu Wang, Jing Li, et al. "Auger scattering dynamic of photo-excited hot carriers in nano-graphite film." Applied Physics Letters 121, no. 18 (October 31, 2022): 181104. http://dx.doi.org/10.1063/5.0116720.

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Charge carrier scattering channels in graphite bridging its valence and conduction band offer an efficient Auger recombination dynamic to promote low energy charge carriers to higher energy states. It is of importance to answer the question whether a large number of charge carriers can be promoted to higher energy states to enhance the quantum efficiency of photodetectors. Here, we present an experimental demonstration of an effective Auger recombination process in the photo-excited nano-graphite film. The time-resolved hot carrier thermalization was analyzed based on the energy dissipation via the Auger scattering channels. We split the Auger recombination occurrence centered at 0.40 eV energy state into scattering and recombination parts, for characterizing the scattering rate in the conduction band and the recombination rate toward the valence band. The scattering time with respect to the energy state was extracted as 8 ps · eV−1, while the recombination time with respect to the energy state was extracted as 24 ps · eV−1. Our study indicates a 300 fs delay between the hot carrier recombination and generation, leading to a 105 ps−1 · cm−3 Auger scattering efficiency. The observed duration for the Auger recombination to generate hot carriers is prolonged for 1 ps, due to the hot carriers energy relaxation bottleneck with optical-phonons in the nano-graphite. The presented analytic expression gives valuable insights into the Auger recombination dynamic to estimate its most efficient energy regime for mid-infrared photodetection.
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Tanaka, Kazuhiro, and Masashi Kato. "Carrier recombination in highly Al doped 4H-SiC: dependence on the injection conditions." Japanese Journal of Applied Physics 63, no. 1 (January 1, 2024): 011002. http://dx.doi.org/10.35848/1347-4065/ad160c.

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Abstract We investigate carrier recombination mechanisms in heavily aluminum (Al) doped p-type 4H-SiC, a material crucial for power devices. The recombination mechanisms in Al-doped p-type 4H-SiC have remained unclear, with reports suggesting various possibilities. To gain insights, we employ photoluminescence (PL) measurements, particularly time-resolved PL (TR-PL), as they are well-suited for studying carrier lifetimes in heavily Al-doped p-type 4H-SiC. We examine the temperature and excitation intensity dependencies of TR-PL and PL spectra and discuss the underlying recombination mechanisms. We observe that the dominant recombination mechanism varies with injection conditions for the samples with Al concentration less than 1019 cm−3. Under low injection conditions, recombination via the Al acceptor level appears dominant, exhibiting weak temperature dependence. However, under high injection conditions, Shockley–Read–Hall recombination takes precedence, leading to shorter carrier lifetimes with increasing temperature. This temperature dependence implies that presences of the deep recombination centers with the small capture barrier for holes.
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Juška, Gytis, Kęstutis Arlauskas, and Kristijonas Genevičius. "Charge carrier transport and recombination in disordered materials." Lithuanian Journal of Physics 56, no. 3 (October 17, 2016): 182–89. http://dx.doi.org/10.3952/physics.v56i3.3367.

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In this brief review the methods for investigation of charge carrier transport and recombination in thin layers of disordered materials and the obtained results are discussed. The method of charge carrier extraction by linearly increasing voltage (CELIV) is useful for the determination of mobility, bulk conductivity and density of equilibrium charge carriers. The extraction of photogenerated charge carriers (photo-CELIV) allows one to independently investigate relaxation of both the mobility and density of photogenerated charge carriers. The extraction of injected charge carriers (i-CELIV) is effective for the independent investigation of transport peculiarities of both injected holes and electrons in bulk heterojunctions. For the investigation of charge carrier recombination we proposed integral time-of-flight (TOF) and double-injection (DI) current transient methods. The methods allowed us to obtain the following significant results: to determine the reason of the conductivity dependence on electric field strength and temperature in the amorphous and microcrystalline hydrogenated silicon and π-conjugated polymers, the time dependent Langevin recombination, the impact of morphology on charge carrier mobility, the reason of reduced Langevin recombination in RR-PHT (regioregular poly(3-hexylthiophene))/PCBM (1-(3-methoxycarbonyl)propyl-1phenyl-[6,6]-methanofullerene) bulk heterojunction structures – 2D Langevin recombination; and to evaluate that the mobility of holes is predetermined by off-diagonal dispersion in poly-PbO.
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Dissertations / Theses on the topic "Carrier recombination"

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Böhme, Christoph. "Dynamics of spin-dependent charge carrier recombination." [S.l.] : [s.n.], 2003. http://archiv.ub.uni-marburg.de/diss/z2003/0183.

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Mickevičius, Jūras. "Carrier recombination in wide-band-gap nitride semiconductors." Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2009. http://vddb.library.lt/obj/LT-eLABa-0001:E.02~2009~D_20091121_102304-00016.

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The thesis is dedicated to carrier recombination investigations in wide-band-gap semiconductors and their structures. The complex experimental studies were performed by combining several different techniques. Carrier dynamics in GaN epilayers were investigated under extremely low and high excitation conditions. A new method for interpreting photoluminescence decay kinetics was suggested by interrelating luminescence and light-induced grating decay transients. The new approach for studies of yellow band in GaN was shown by linking the carrier lifetime with yellow band intensity. Two AlGaN epilayers grown by different novel growth techniques were compared and the factors limiting carrier lifetime were identified. Moreover, more evidence on alloy mixing and band potential fluctuations in AlGaN was provided by our study. Essential knowledge was attained about carrier dynamics in high-Al-content AlGaN/AlGaN multiple quantum well structures: the influence of built-in electric field and carrier localization on carrier dynamics. Most of the samples under study were grown by MEMOCVDTM growth technique, and our study confirmed the high potential of this innovative growth technique for improving material quality.
Disertacija skirta krūvininkų rekombinacijos tyrimams plačiatarpiuose nitridiniuose puslaidininkiuose bei jų dariniuose. Kompleksiniai eksperimentiniai tyrimai buvo atlikti naudojant kelias skirtingas metodikas. Atlikti krūvininkų dinamikos GaN sluoksniuose tyrimai labai žemų ir aukštų sužadinimų sąlygomis. Pasiūlytas naujas liuminescencijos gesimo kinetikų interpretavimo metodas, siejant liuminescencijos ir šviesa indukuotų dinaminių gardelių kinetikas. Naujas požiūris į geltonosios liuminescencijos juostą GaN sluoksniuose leido susieti geltonosios liuminescencijos intensyvumą su krūvininkų gyvavimo trukme. Skirtingomis technologijomis augintų AlGaN sluoksnių palyginimas suteikė informacijos apie juostos potencialo fliuktuacijas bei krūvininkų gyvavimo trukmę ribojančius veiksnius AlGaN medžiagose. Atskleista naujų krūvininkų dinamikos daugialakštėse AlGaN/AlGaN kvantinėse duobėse ypatumų – vidinio elektrinio lauko bei kvantinės duobės pločio fliuktuacijų sąlygotos lokalizacijos įtaka krūvininkų dinamikai. Dauguma tirtų bandinių buvo auginti naudojant MEMOCVDTM technologiją ir tyrimai patvirtino šios technologijos potencialą siekiant pagerinti medžiagų kokybę.
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Reith, Charis. "Spin relaxation and carrier recombination in GaInNAs multiple quantum wells." Thesis, University of St Andrews, 2007. http://hdl.handle.net/10023/160.

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Electron spin relaxation and carrier recombination were investigated in gallium indium nitride arsenide (GaInNAs) multiple quantum wells, using picosecond optical pulses. Pump-probe experiments were carried out at room temperature, using pulses produced by a Ti:sapphire pumped optical parametric oscillator. The peak wavelengths of the excitonic resonances for the quantum well samples were identified using linear absorption measurements, and were found to be in the range 1.25µm-1.29µm. Carrier recombination times were measured for three samples of varying nitrogen content, and were observed to decrease from 548 to 180ps as nitrogen molar fractions were increased in the range 0.45-1.24%. Carrier recombination times were also measured for samples which had undergone a post-growth annealing process, and were found to be signicantly shorter compared to times measured for as-grown samples. Electron spin relaxation time was investigated for samples with quantum well widths in the range 5.8-8nm, and was found to increase with increasing well width, (i.e. decreasing quantum confinement energy), a trend predicted by both D'Yakonov-Kachorovskii and Elliott-Yafet models of spin relaxation in quantum wells. In a further study, longer spin relaxation times were exhibited by samples containing higher molar fractions of nitrogen, but having nominally constant quantum well width. Spin relaxation times increased from 47ps to 115ps for samples containing nitrogen concentrations in the range 0.45-1.24%. Decreases in spin relaxation time were observed in the case of those samples which had been annealed post-growth, compared to as-grown samples. Finally, all-optical polarisation switching based on spin relaxation of optically generated carriers in GaInNAs multiple quantum wells was demonstrated.
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Olszak, Peter D. "Nonlinear absorption and free carrier recombination in direct gap semiconductors." Doctoral diss., University of Central Florida, 2010. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4620.

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Nonlinear absorption of Indium Antimonide (InSb) has been studied for many years, yet due to the complexity of absorption mechanisms and experimental difficulties in the infrared, this is still a subject of research. Although measurements have been made in the past, a consistent model that worked for both picosecond and nanosecond pulse widths had not been demonstrated. In this project, temperature dependent two-photon (2PA) and free carrier absorption (FCA) spectra of InSb are measured using femtosecond, picosecond, and nanosecond IR sources. The 2PA spectrum is measured at room temperature with femtosecond pulses, and the temperature dependence of 2PA and FCA is measured at 10.6[micro]meters using a nanosecond CO[sub]2 laser giving results consistent with the temperature dependent measurements at several wavelengths made with a tunable picosecond system. Measurements over this substantial range of pulse widths give results for FCA and 2PA consistent with a recent theoretical model for FCA. While the FCA cross section has been generally accepted in the past to be a constant for the temperatures and wavelengths used in this study, this model predicts that it varies significantly with temperature as well as wavelength. Additionally, the results for 2PA are consistent with the band gap scaling (Eg[super]-3) predicted by a simple two parabolic band model. Using nanosecond pulses from a CO?éé laser enables the recombination rates to be determined through nonlinear transmittance measurements. Three-photon absorption is also observed in InSb for photon energies below the 2PA band edge. Prior to this work, data on three-photon absorption (3PA) in semiconductors was scarce and most experiments were performed over narrow spectral ranges, making comparison to the available theoretical models difficult. There was also disagreement between the theoretical results generated by different models, primarily in the spectral behavior.; Therefore, we studied the band gap scaling and spectra of 3PA in several semiconductors by the Z-scan technique. The 3PA coefficient is found to vary as (Eg[super]-7), as predicted by the scaling rules of simple two parabolic band models. The spectral behavior, which is considerably more complex than for 2PA, is found to agree well with a recently published theory based on a four-band model.
ID: 029050684; System requirements: World Wide Web browser and PDF reader.; Mode of access: World Wide Web.; Thesis (Ph.D.)--University of Central Florida, 2010.; Includes bibliographical references.
Ph.D.
Doctorate
Optics and Photonics
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McConville, Daniel. "Carrier recombination in dilute nitride based near infrared semiconductor lasers." Thesis, University of Surrey, 2007. http://epubs.surrey.ac.uk/844606/.

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This thesis describes and quantifies the roles of the different carrier recombination processes within near infrared GaInNAs single quantum well laser devices. An initial review of the published literature relating to GaInNAs highlighted a number of areas where investigation of the material system would be interesting, including changing the nitrogen concentration, the barrier material, the incorporated strain and the growth technique. We find that at 1.3mum, at room temperature, the threshold current of MBE grown devices is composed of 70% Auger recombination, 25% monomolecular recombination and 5% radiative recombination, and at 1.5mum, 61% Auger recombination, 31% monomolecular recombination and 8% radiative recombination. In absolute terms Auger is the most significant current path over the entire wavelength range. This dominance of Auger recombination was also found to be responsible for the poor temperature stability of these devices, with the Auger recombination component typically having a T0 ~50K. Calculations of the threshold carrier density along with a break-down of the threshold current were used to evaluate the recombination coefficients; these were found to be A = 4x108 (s-1), B - 3x10-11 (cm3s-1) and C = 6x10-29 (cm6s-1) at 1.3mum, and A = 8x108 (s-1), B = 6x10 -11 (cm3s-1) and C = 1.2x10-28 (cm6s-1) at 1.5mum. These values are comparable to those of InGaAsP and AlGaInAs. Furthermore, these investigations suggest that carrier leakage is negligible in these devices. Hydrostatic pressure techniques were used to study the effect of changing the band gap on the recombination processes occurring within the devices; this highlighted the importance of the band anti crossing interaction between the conduction band edge and the nitrogen level in GaInNAs devices where it was seen that a longer wavelengths this interaction appears to be weaker. Replacing GaAs barriers with GaNAs barriers leads to a ~ 15% reduction in the magnitude of the monomolecular current present, indicating that this should be a useful method of optimising the growth of GaInNAs. An investigation into the effect of strain incorporated within the quantum well of the ~1.5mum devices highlighted the possibility of its use to reduce the threshold carrier density and thus the Auger current within these devices. Since this work was based on single quantum well devices it shows that the GaInNAs material system is a very promising alternative to conventional InGaAsP and AlGaInAs devices which rely upon multiple quantum wells.
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GATTI, ELEONORA. "Recombination processes and carrier dynamics in Ge/SiGe multiple quantum wells." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2012. http://hdl.handle.net/10281/28451.

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Ge/SiGe quantum wells (QWs) are a new system characterized by optical and electronic properties different from those commonly observed in the more widely studied QWs based on III-V semiconductors. These peculiar properties are due to the type-I band alignment for both the Γ- and the L-type states and to the small energy distance between the direct and the indirect bad gap in Ge, which provides Ge/SiGe QWs with a so-called quasi-direct optical behavior. Moreover, these systems are of potential interest for the integration of good optical properties on the CMOS platform: indeed, room temperature electroluminescence, optical gain and an efficient Quantum Confined Stark Effect have all been demonstrated on Ge/SiGe QWs. This thesis is aimed at a detailed and systematic study of the recombination processes and of the carrier dynamics of compressively strained Ge/SiGe QWs with Ge-rich barriers. Different optical spectroscopy techniques have been employed and measurements as a function of different parameters have been performed. The origin and the decay of the direct and the indirect emission, the thermalization paths, and the scattering phenomena that occur in Ge/SiGe QWs have all been analyzed. An overall picture of carrier dynamics in these systems summarizes all the experimental evidences, and the typical times of the different processes are provided. These results enable a deeper understanding of the intricate and rich carrier dynamics that characterize Ge/SiGe QWs.
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Thota, Venkata Ramana Kumar. "Tunable Optical Phenomena and Carrier Recombination Dynamics in III-V Semiconductor Nanostructures." Ohio University / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1451807323.

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Naidu, Deepal. "Characterisation of lateral carrier out-diffusion and surface recombination in ridge waveguide devices." Thesis, Cardiff University, 2009. http://orca.cf.ac.uk/54892/.

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As laser devices are scaled down in size and involve the use of photonic structures etched through the active layer - a trend driven by the desire to improve device performance and functionality for future applications in optoelectronic integrated circuits - performance limiting mechanisms such as an increasing internal optical loss, deteriorating gain-mode overlap, lateral carrier out-diffusion and surface recombination can inflict restrictions on the further miniaturisation and overall performance. In this project I have separately evaluated the relative impact of these mechanisms using ridge waveguide devices, with particular focus on the behaviour of the lateral out-diffusion and the surface-recombination mechanism in quantum-dot and quantum-well active regions. The approach of separately evaluating the relative impact of each mechanism is made possible by using the multisection characterisation technique. By this means the investigation in this study circumvents the problems associated with previous studies on lateral out-diffusion and surface recombination. Moreover, it furthers the overall analysis by measuring the effects as a function of injection-level and quantifying the change in non-radiative current density and overall internal quantum efficiency. In quantum-dot shallow etched ridge waveguide devices (S-RWG) it is found that the mechanism of an increasing internal optical mode loss and increasing lateral out-diffusion current are the principal causes for the apparent increase in threshold current density with reducing ridge width from 10 to 4 um. The internal optical loss was found to increase by a factor of 2.3 over this range and the non-radiative current density due to lateral out diffusion increased by a factor of 1.14 at an injection-level of 121 meV. The mechanism of a deteriorating gain-mode overlap was negligible in this range. Measurements of the lateral ambipolar diffusion length found that in self-assembled quantum-dot/wetting-layer systems the lateral ambipolar diffusion process can be inhibited in one of two ways: one good and one bad. This original result showed that the good way, in terms of benefiting the overall device performance, involves the inhibition due to three-dimensional carrier confinement in the quantum-dots. The other involves populating the wetting-layer to a point where a higher order non-radiative recombination process reduces the average carrier lifetime and hence ambipolar diffusion length. Both regimes can reduce the loss of carriers to lateral carrier out-diffusion and surface recombination however the latter is at the expense of increasing other non-radiative recombination processes. The ambipolar diffusion length was also found to be temperature dependent with a smaller diffusion length at lower temperatures. At 350 K the lateral ambipolar diffusion length varied from 0.75 um to a maximum value of 1.5 um over the injection-level range 65 meV to 84 meV. At 300 K the ambipolar diffusion length was smaller than 0.75 um for injection-levels below 121 meV. In quantum-well deep etched ridge waveguide devices (D-RWG) it was found that the D-RWG structure allowed much smaller ridge width (<2.8 (am) devices than S-RWG structures before as significant an increase in internal optical loss occurred. However, once a significant interaction of the wave amplitude and rough sidewalls does occur, the scattering loss in D-RWG structures was much more strongly affected. The D-RWG structure also provided no deterioration in the gain-mode overlap in the range 29 to 1.9 um. A power law analysis of the measured non-radiative current density revealed that the principal threshold increasing mechanism in D-RWG devices was surface recombination. The fractional increase in threshold non-radiative current density for 1.5 mm lasers was significant. From a width of 29.1 to 9.6 um the non-radiative current density increased by factor of 2 to a value of 462 A/cm2, and from 29.1 to 2.8 um by a factor of 11 to 2612 A/cm2. The overall internal quantum efficiency at threshold in the 1.5 mm lasers was measured to significantly decrease as the ridge width was reduced. This is a direct consequence of an increasing fraction of applied current recombining via surface recombination. The measured decrease from a ridge width of 29.1 um to 2.8 um was 16.6 % to 1.8 %. By characterizing the performance differences in the two RWG structures and the threshold increasing mechanisms of lateral out-diffusion and surface recombination in quantum-dot and quantum-well active regions respectively, knowledge of the criteria required for designing better devices for further miniaturisation and improved threshold performance was gained.
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Ivanov, Ruslan. "Impact of carrier localization on recombination in InGaN quantum wells with nonbasal crystallographic orientations." Doctoral thesis, KTH, Optik och Fotonik, OFO, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-214599.

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The modern InGaN technology demonstrates high efficiencies only in the blue spectral region and low current operation modes. The growth of InGaN quantum wells (QWs) on nonbasal crystallographic planes (NBP) has potential to deliver high-power blue and green light emitting diodes and lasers. The emission properties of these QWs are largely determined by the localization of carriers in the minima of spatially inhomogeneous band potential, which affects the recombination dynamics, spectral characteristics of the emission, its optical polarization and carrier transport. Understanding it is crucial for increasing the efficiency of NBP structures to their theoretical limit. In this thesis, the influence of carrier localization on the critical aspects of light emission has been investigated in semipolar  and nonpolar  InGaN QWs. For this purpose, novel multimode scanning near-field optical microscopy configurations have been developed, allowing mapping of the spectrally-, time-, and polarization-resolved emission. In the nonpolar QW structures the sub-micrometer band gap fluctuations could be assigned to the selective incorporation of indium on different slopes of the undulations, while in the smoother semipolar QWs – to the nonuniformity of QW growth. The nanoscale band potential fluctuations and the carrier localization were found to increase with increasing indium percentage in the InGaN alloy. In spite to the large depth of the potential minima, the localized valence band states were found to retain properties of the corresponding bands. The reduced carrier transfer between localization sites has been suggested as a reason for the long recombination times in the green-emitting semipolar QWs. Sharp increase of the radiative lifetimes has been assigned to the effect of nanoscale electric fields resulting from nonplanar QW interfaces. Lastly, the ambipolar carrier diffusion has been measured, revealing ~100 nm diffusion length and high anisotropy.

QC 20170919

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Sieland, Fabian [Verfasser], and Detlef W. [Akademischer Betreuer] Bahnemann. "Fractal charge carrier recombination kinetics in photocatalytic systems / Fabian Sieland ; Betreuer: Detlef W. Bahnemann." Hannover : Gottfried Wilhelm Leibniz Universität Hannover, 2018. http://d-nb.info/1172414157/34.

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Books on the topic "Carrier recombination"

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Orton, J. W. The electrical characterization of semiconductors: Measurement of minority carrier properties. London: Academic Press, 1990.

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Davidson, J. A. Minority carrier processes and recombination at point and extended defects in silicon. Manchester: UMIST, 1996.

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Edward, Swirhun Stanley, Swanson Richard M, and United States. National Aeronautics and Space Administration, eds. Measurement of carrier transport and recombination parameter in heavily doped silicon: Final report. Stanford, CA: Solid State Electronics Laboratory, Stanford Electronics Laboratories, Dept. of Electrical Engineering, Stanford University, 1986.

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Reggiani, L. Recombination and ionization processes at impurity centres in hot-electron semiconductor transport. Bologna: Editrice Compositori, 1989.

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E, Vance Dennis, and Vance Jean E, eds. Biochemistry of lipids, lipoproteins, and membranes. Amsterdam: Elsevier, 1991.

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Measurement of Ultrafast Carrier Recombination Dynamics in Mid-Infrared Semiconductor Laser Material. Storming Media, 1997.

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Orton, J. W., and P. Blood. The Electrical Characterization of Semiconductors: Measurement of Minority Carrier Properties (Techniques of Physics). Academic Press, 1992.

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Deviation of Time-Resolved Luminescence Dynamics in MWIR Semiconductor Materials from Carrier Recombination Theory Predictions. Storming Media, 2004.

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Voll, Reinhard E., and Barbara M. Bröker. Innate vs acquired immunity. Oxford University Press, 2013. http://dx.doi.org/10.1093/med/9780199642489.003.0048.

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The innate and the adaptive immune system efficiently cooperate to protect us from infections. The ancient innate immune system, dating back to the first multicellular organisms, utilizes phagocytic cells, soluble antimicrobial peptides, and the complement system for an immediate line of defence against pathogens. Using a limited number of germline-encoded pattern recognition receptors including the Toll-like, RIG-1-like, and NOD-like receptors, the innate immune system recognizes so-called pathogen-associated molecular patterns (PAMPs). PAMPs are specific for groups of related microorganisms and represent highly conserved, mostly non-protein molecules essential for the pathogens' life cycles. Hence, escape mutants strongly reduce the pathogen's fitness. An important task of the innate immune system is to distinguish between harmless antigens and potentially dangerous pathogens. Ideally, innate immune cells should activate the adaptive immune cells only in the case of invading pathogens. The evolutionarily rather new adaptive immune system, which can be found in jawed fish and higher vertebrates, needs several days to mount an efficient response upon its first encounter with a certain pathogen. As soon as antigen-specific lymphocyte clones have been expanded, they powerfully fight the pathogen. Importantly, memory lymphocytes can often protect us from reinfections. During the development of T and B lymphocytes, many millions of different receptors are generated by somatic recombination and hypermutation of gene segments making up the antigen receptors. This process carries the inherent risk of autoimmunity, causing most inflammatory rheumatic diseases. In contrast, inadequate activation of the innate immune system, especially activation of the inflammasomes, may cause autoinflammatory syndromes.
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Book chapters on the topic "Carrier recombination"

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Böer, Karl W. "Carrier Recombination." In Handbook of the Physics of Thin-Film Solar Cells, 367–86. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-36748-9_22.

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Böer, Karl W. "Carrier Recombination." In Survey of Semiconductor Physics, 980–1002. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4615-9744-5_43.

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Böer, Karl W., and Udo W. Pohl. "Carrier Recombination and Noise." In Semiconductor Physics, 1–55. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-06540-3_30-1.

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Böer, Karl W., and Udo W. Pohl. "Carrier Recombination and Noise." In Semiconductor Physics, 1–55. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-06540-3_30-2.

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Böer, Karl W., and Udo W. Pohl. "Carrier Recombination and Noise." In Semiconductor Physics, 1–56. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-319-06540-3_30-3.

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Böer, Karl W., and Udo W. Pohl. "Carrier Recombination and Noise." In Semiconductor Physics, 1125–79. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-69150-3_30.

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Böer, Karl W., and Udo W. Pohl. "Carrier Recombination and Noise." In Semiconductor Physics, 1–57. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-319-06540-3_30-4.

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Böer, Karl W., and Udo W. Pohl. "Carrier Recombination and Noise." In Semiconductor Physics, 1241–97. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-18286-0_30.

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Bisquert, Juan. "Light Absorption, Carrier Recombination, and Luminescence." In The Physics of Solar Cells, 23–42. Boca Raton, FL : CRC Press, Taylor & Francis Group, [2018]: CRC Press, 2017. http://dx.doi.org/10.1201/b22380-2.

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Ley, L., and M. Hundhausen. "Carrier Recombination Kinetics in Amorphous Doping Superlattices." In Disordered Semiconductors, 551–61. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1841-5_59.

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Conference papers on the topic "Carrier recombination"

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Kalem, Seref, and Villy Sundstrom. "Excited Carrier Recombination in Black Silicon." In 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). IEEE, 2020. http://dx.doi.org/10.1109/eurosoi-ulis49407.2020.9365291.

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Poonia, Ajay K., Wasim J. Mir, Megha Shrivastava, Angshuman Nag, and K. V. Adarsh. "Thermal assisted carrier recombination in CsPbBr3 nanocrystals." In CLEO: Science and Innovations. Washington, D.C.: OSA, 2020. http://dx.doi.org/10.1364/cleo_si.2020.sth4h.7.

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Vandewal, Koen. "Emissive Free Carrier Recombination in Organic Photovoltaics." In Materials for Sustainable Development Conference (MAT-SUS). València: FUNDACIO DE LA COMUNITAT VALENCIANA SCITO, 2022. http://dx.doi.org/10.29363/nanoge.nfm.2022.129.

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Chen, Y. C., R. G. Waters, J. J. Coleman, D. P. Bour, and P. Wang. "Carrier recombination rates in GaAs and InGaAs quantum-well lasers." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.tun4.

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The carrier recombination rates in GaAs1 and strained InGaAs/GaAs single-quantumwell lasers have been studied using the differential carrier-lifetime technique for carrier densities from 1017-1019/cm3. We have found that the carrier lifetime is not an intrinsic property of the material but is strongly structure-dependent. Under high levels of excitation, the recombination rates deviate considerably from the recombination rules of the bulk materials. The rates are typically smaller in quantum wells that have lower potential barriers and/or thinner well widths. The rates increase sublinearly with increasing carrier density up to carrier densities of approximately 1017/cm3 (rather than super-linearly as is observed in the bulk), but they remain nearly constant for densities greater than 1019/cm3. This occurs because a portion of the injected carriers populate the continuum states of the confinement layers where the carrier volume density is diluted and the overall carrier lifetime is prolonged. These inactive carriers may lead to the anomalously large linewidth enhancement factor in some InGaAs/GaAs lasers. Our experimental work also demonstrates that Auger recombination is negligible in GaAs and strained InGaAs/GaAs single quantum wells for carrier densities on the order of 1019/cm3.
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Heyen, E. T., M. Hagerott, A. V. Nurmikko, and D. L. Partin. "Free Carrier Radiative Recombination in 2D: PbTe Quantum Wells." In Quantum Wells for Optics and Opto-Electronics. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/qwoe.1989.mc4.

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There have been a number of studies aimed at isolating radiative recombination in semiconductor quantum wells, a process which in many instances is strongly influenced by excitonic effects such as in III-V (e.g. GaAs [1]) or wide-gap II-VI (e.g. ZnSe [2]) semiconductor heterostructures. Recently, Matsusue and Sakaki have exploited modulation doped GaAs/(Ga,Al)As multiple quantum wells (MQW) to show how radiative recombination of a quasi-two dimensional (2D) free electron-hole gas can be distinctly identified while reducing excitonic complications [3]. In narrow-gap semiconductors, such as PbTe, excitonic effects are negligible; therefore quantum wells from these materials offer a clear opportunity to study quasi-2D free carrier radiative recombination over a wide temperature and density. We show here that radiative recombination dominates in high quality MBE-grown PbTe/(Pb,Eu)Te MQW’s. At the same time PbTe/(Pb,Eu)Te based heterostructures show excellent prospects as low threshold diode injection lasers at mid-infrared wavelengths [4].
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Hader, J., J. Moloney, S. Koch, L. Fan, and M. Fallahi. "Carrier Recombination in Semiconductor Lasers: Beyond the ABC." In 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices. IEEE, 2006. http://dx.doi.org/10.1109/nusod.2006.306730.

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Zheng, Jim P., and HoiSing Kwok. "Mechanism of the carrier recombination in semiconductor dots." In OE/LASE '94, edited by Gottfried H. Doehler and Emil S. Koteles. SPIE, 1994. http://dx.doi.org/10.1117/12.175720.

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Hader, J., J. V. Moloney, and S. W. Koch. "Beyond the ABC: carrier recombination in semiconductor lasers." In Integrated Optoelectronic Devices 2006, edited by Marek Osinski, Fritz Henneberger, and Yasuhiko Arakawa. SPIE, 2006. http://dx.doi.org/10.1117/12.641744.

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Sandmann, J. H. H., S. Grosse, J. Feldmann, H. Lipsanen, M. Sopanen, J. Tulkki, and J. Ahopelto. "Carrier Relaxation and Recombination Dynamics in InGaAs/GaAs quantum dots." In International Conference on Ultrafast Phenomena. Washington, D.C.: Optica Publishing Group, 1996. http://dx.doi.org/10.1364/up.1996.thb.3.

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We present results of time-resolved photoluminescence (PL) studies performed on InGaAs quantum dots (QD) of remarkably high optical quality. Characteristic QD properties in the relaxation and recombination scenario such as delay of relaxation by Pauli-blocking, inefficient inter-dot-state relaxation by phonon scattering and a temperature independent recombination lifetime are observed. In addition, we find that fast and efficient Coulomb-scattering speeds up the carrier relaxation between QD states, i.e. down to the lowest QD ground state.
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Krinke, J., M. Albrecht, W. Dorsch, A. Voigt, H. P. Strunk, B. Steiner, and G. Wagner. "Grain boundaries in silicon: microstructure and minority carrier recombination." In Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996. IEEE, 1996. http://dx.doi.org/10.1109/pvsc.1996.564046.

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Reports on the topic "Carrier recombination"

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S Anikeev, D Donetsky, G Belenky, S Luryl, CA Wang, DA Shiau, M Dashiell, J Beausang, and G Nichols. Effects of Radiative Recombination and Photon Recycling on Minority Carrier Lifetime in Epitaxial GaINAsSb Lattice-matched to GaSb. Office of Scientific and Technical Information (OSTI), May 2004. http://dx.doi.org/10.2172/836448.

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Pawlowski, Wojtek P., and Avraham A. Levy. What shapes the crossover landscape in maize and wheat and how can we modify it. United States Department of Agriculture, January 2015. http://dx.doi.org/10.32747/2015.7600025.bard.

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Meiotic recombination is a process in which homologous chromosomes engage in the exchange of DNA segments, creating gametes with new genetic makeup and progeny with new traits. The genetic diversity generated in this way is the main engine of crop improvement in sexually reproducing plants. Understanding regulation of this process, particularly the regulation of the rate and location of recombination events, and devising ways of modifying them, was the major motivation of this project. The project was carried out in maize and wheat, two leading crops, in which any advance in the breeder’s toolbox can have a huge impact on food production. Preliminary work done in the USA and Israeli labs had established a strong basis to address these questions. The USA lab pioneered the ability to map sites where recombination is initiated via the induction of double-strand breaks in chromosomal DNA. It has a long experience in cytological analysis of meiosis. The Israeli lab has expertise in high resolution mapping of crossover sites and has done pioneering work on the importance of epigenetic modifications for crossover distribution. It has identified genes that limit the rates of recombination. Our working hypothesis was that an integrative analysis of double-strand breaks, crossovers, and epigenetic data will increase our understanding of how meiotic recombination is regulated and will enhance our ability to manipulate it. The specific objectives of the project were: To analyze the connection between double-strand breaks, crossover, and epigenetic marks in maize and wheat. Protocols developed for double-strand breaks mapping in maize were applied to wheat. A detailed analysis of existing and new data in maize was conducted to map crossovers at high resolution and search for DNA sequence motifs underlying crossover hotspots. Epigenetic modifications along maize chromosomes were analyzed as well. Finally, a computational analysis tested various hypotheses on the importance of chromatin structure and specific epigenetic modifications in determining the locations of double-strand breaks and crossovers along chromosomes. Transient knockdowns of meiotic genes that suppress homologous recombination were carried out in wheat using Virus-Induced Gene Silencing. The target genes were orthologs of FANCM, DDM1, MET1, RECQ4, and XRCC2.
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Levin, Ilan, John W. Scott, Moshe Lapidot, and Moshe Reuveni. Fine mapping, functional analysis and pyramiding of genes controlling begomovirus resistance in tomato. United States Department of Agriculture, November 2014. http://dx.doi.org/10.32747/2014.7594406.bard.

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Abstract. Tomato yellow leaf curl virus (TYLCV), a monopartitebegomovirus, is one of the most devastating viruses of cultivated tomatoes and poses increasing threat to tomato production worldwide. Because all accessions of the cultivated tomato are susceptible to these viruses, wild tomato species have become a valuable resource of resistance genes. QTL controlling resistance to TYLCV and other begomoviruses (Ty loci) were introgressed from several wild tomato species and mapped to the tomato genome. Additionally, a non-isogenic F₁diallel study demonstrated that several of these resistance sources may interact with each other, and in some cases generate hybrid plants displaying lower symptoms and higher fruit yield compared to their parental lines, while their respective resistance genes are not necessarily allelic. This suggests that pyramiding genes originating from different resistance sources can be effective in obtaining lines and cultivars which are highly resistant to begomoviruses. Molecular tools needed to test this hypothesis have been developed by our labs and can thus significantly improve our understanding of the mechanisms of begomovirus resistance and how to efficiently exploit them to develop wider and more durable resistance. Five non-allelic Ty loci with relatively major effects have been mapped to the tomato genome using molecular DNA markers, thereby establishing tools for efficient marker assisted selection, pyramiding of multiple genes, and map based gene cloning: Ty-1, Ty-2, Ty-3, Ty-4, and ty-5. This research focused on Ty-3 and Ty-4 due to their broad range of resistance to different begomoviruses, including ToMoV, and on ty-5 due to its exceptionally high level of resistance to TYLCV and other begomoviruses. Our aims were: (1) clone Ty-3, and fine map Ty-4 and Ty-5 genes, (2)introgress each gene into two backgroundsand develop semi isogenic lines harboring all possible combinations of the three genes while minimizing linkage-drag, (3) test the resulting lines, and F₁ hybrids made with them, for symptom severity and yield components, and (4) identify and functionally characterize candidate genes that map to chromosomal segments which harbor the resistance loci. During the course of this research we have: (1) found that the allelic Ty-1 and Ty-3 represent two alternative alleles of the gene coding DFDGD-RDRP; (2) found that ty-5is highly likely encoded by the messenger RNA surveillance factor PELOTA (validation is at progress with positive results); (3) continued the map-based cloning of Ty-4; (4) generated all possible gene combinations among Ty-1, Ty-3 and ty-5, including their F₁ counterparts, and tested them for TYLCV and ToMoV resistance; (5) found that the symptomless line TY172, carrying ty-5, also carries a novel allele of Ty-1 (termed Ty-1ⱽ). The main scientific and agricultural implications of this research are as follows: (1) We have developed recombination free DNA markers that will substantially facilitate the introgression of Ty-1, Ty-3 and ty-5 as well as their combinations; (2) We have identified the genes controlling TYLCV resistance at the Ty-1/Ty-3 and ty-5 loci, thus enabling an in-depth analyses of the mechanisms that facilitate begomovirus resistance; (3) Pyramiding of Ty resistance loci is highly effective in providing significantly higher TYLCV resistance.
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