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Relevant bibliographies by topics / Carrier recombination

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Academic literature on the topic 'Carrier recombination'

Author: Grafiati

Published: 4 June 2021

Last updated: 11 January 2025

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Journal articles on the topic "Carrier recombination"

1

Musa, Hiba J., and Ahmed H. Flayyih. "Carrier dynamic and carrier Temperature in Quantum Well." University of Thi-Qar Journal of Science 9, no. 1 (2022): 102–7. http://dx.doi.org/10.32792/utq/utjsci.v9i1.889.

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Carrier temperature in quantum well (QW)semiconductor optical amplifier (SOA) has been studied,depending density matrix theory (DMT) and carrier dynamicin quantum well. The effect of volume carrier density, dopingon effect, pulse shape, nonradiative relaxation, and nonlineargain coefficients on the carrier temperature and carrierheating has been investigated. The theoretical results showthat; the time recovery increases straightforward withnonradiative recombination, where the relaxation time ofnonradiative recombination reduces the rate of carrieroccupation in quantum states. Also, the carrie

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2

Moses, D., and A. J. Heeger. "Fast transient photoconductivity in polydiacetylene: carrier photogeneration, carrier mobility and carrier recombination." Journal of Physics: Condensed Matter 1, no. 40 (1989): 7395–405. http://dx.doi.org/10.1088/0953-8984/1/40/013.

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3

deQuilettes, Dane W., Kyle Frohna, David Emin, et al. "Charge-Carrier Recombination in Halide Perovskites." Chemical Reviews 119, no. 20 (2019): 11007–19. http://dx.doi.org/10.1021/acs.chemrev.9b00169.

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Volkov, Victor V., Z. L. Wang, and B. S. Zou. "Carrier recombination in clusters of NiO." Chemical Physics Letters 337, no. 1-3 (2001): 117–24. http://dx.doi.org/10.1016/s0009-2614(01)00191-9.

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Konin, A. "Interface recombination influence on carrier transport." Semiconductor Science and Technology 28, no. 2 (2012): 025003. http://dx.doi.org/10.1088/0268-1242/28/2/025003.

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Smaili, Idris H., and Ghazi Ben Hmida. "A Review of Minority Carrier Recombination Lifetime Measurements." International Journal for Research in Applied Science and Engineering Technology 11, no. 5 (2023): 1351–63. http://dx.doi.org/10.22214/ijraset.2023.51725.

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Abstract: The recombination lifetime of minority carriers is a critical parameter in semiconductor devices such as photovoltaic cells since it controls the efficiency of such devices. Many techniques have been developed to accomplish recombination measurements and thereby test semiconductor devices' efficiencies. Recombination lifetime average values differ according to semiconductor device type; thus, choosing an appropriate technique is important. This paper studies the concept of excess minority carrier lifetime and its calculations. It also investigates the advantages, limitations, and cap

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Shura, Megersa Wodajo. "A Simple Method to Differentiate between Free-Carrier Recombination and Trapping Centers in the Bandgap of the p-Type Semiconductor." Advances in Materials Science and Engineering 2021 (September 7, 2021): 1–13. http://dx.doi.org/10.1155/2021/5568880.

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In this research, the ranges of the localized states in which the recombination and the trapping rates of free carriers dominate the entire transition rates of free carriers in the bandgap of the p-type semiconductor are described. Applying the Shockley–Read–Hall model to a p-type material under a low injection level, the expressions for the recombination rates, the trapping rates, and the excess carrier lifetimes (recombination and trapping) were described as functions of the localized state energies. Next, the very important quantities called the excess carriers’ trapping ratios were describ

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Du, Sichao, Juxin Yin, Hao Xie, et al. "Auger scattering dynamic of photo-excited hot carriers in nano-graphite film." Applied Physics Letters 121, no. 18 (2022): 181104. http://dx.doi.org/10.1063/5.0116720.

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Charge carrier scattering channels in graphite bridging its valence and conduction band offer an efficient Auger recombination dynamic to promote low energy charge carriers to higher energy states. It is of importance to answer the question whether a large number of charge carriers can be promoted to higher energy states to enhance the quantum efficiency of photodetectors. Here, we present an experimental demonstration of an effective Auger recombination process in the photo-excited nano-graphite film. The time-resolved hot carrier thermalization was analyzed based on the energy dissipation vi

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Tanaka, Kazuhiro, and Masashi Kato. "Carrier recombination in highly Al doped 4H-SiC: dependence on the injection conditions." Japanese Journal of Applied Physics 63, no. 1 (2024): 011002. http://dx.doi.org/10.35848/1347-4065/ad160c.

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Abstract We investigate carrier recombination mechanisms in heavily aluminum (Al) doped p-type 4H-SiC, a material crucial for power devices. The recombination mechanisms in Al-doped p-type 4H-SiC have remained unclear, with reports suggesting various possibilities. To gain insights, we employ photoluminescence (PL) measurements, particularly time-resolved PL (TR-PL), as they are well-suited for studying carrier lifetimes in heavily Al-doped p-type 4H-SiC. We examine the temperature and excitation intensity dependencies of TR-PL and PL spectra and discuss the underlying recombination mechanisms

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10

Juška, Gytis, Kęstutis Arlauskas, and Kristijonas Genevičius. "Charge carrier transport and recombination in disordered materials." Lithuanian Journal of Physics 56, no. 3 (2016): 182–89. http://dx.doi.org/10.3952/physics.v56i3.3367.

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In this brief review the methods for investigation of charge carrier transport and recombination in thin layers of disordered materials and the obtained results are discussed. The method of charge carrier extraction by linearly increasing voltage (CELIV) is useful for the determination of mobility, bulk conductivity and density of equilibrium charge carriers. The extraction of photogenerated charge carriers (photo-CELIV) allows one to independently investigate relaxation of both the mobility and density of photogenerated charge carriers. The extraction of injected charge carriers (i-CELIV) is

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Dissertations / Theses on the topic "Carrier recombination"

1

Böhme, Christoph. "Dynamics of spin-dependent charge carrier recombination." [S.l.] : [s.n.], 2003. http://archiv.ub.uni-marburg.de/diss/z2003/0183.

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Mickevičius, Jūras. "Carrier recombination in wide-band-gap nitride semiconductors." Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2009. http://vddb.library.lt/obj/LT-eLABa-0001:E.02~2009~D_20091121_102304-00016.

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The thesis is dedicated to carrier recombination investigations in wide-band-gap semiconductors and their structures. The complex experimental studies were performed by combining several different techniques. Carrier dynamics in GaN epilayers were investigated under extremely low and high excitation conditions. A new method for interpreting photoluminescence decay kinetics was suggested by interrelating luminescence and light-induced grating decay transients. The new approach for studies of yellow band in GaN was shown by linking the carrier lifetime with yellow band intensity. Two AlGaN epila

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3

Reith, Charis. "Spin relaxation and carrier recombination in GaInNAs multiple quantum wells." Thesis, University of St Andrews, 2007. http://hdl.handle.net/10023/160.

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Electron spin relaxation and carrier recombination were investigated in gallium indium nitride arsenide (GaInNAs) multiple quantum wells, using picosecond optical pulses. Pump-probe experiments were carried out at room temperature, using pulses produced by a Ti:sapphire pumped optical parametric oscillator. The peak wavelengths of the excitonic resonances for the quantum well samples were identified using linear absorption measurements, and were found to be in the range 1.25µm-1.29µm. Carrier recombination times were measured for three samples of varying nitrogen content, and were observed to

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Olszak, Peter D. "Nonlinear absorption and free carrier recombination in direct gap semiconductors." Doctoral diss., University of Central Florida, 2010. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4620.

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Nonlinear absorption of Indium Antimonide (InSb) has been studied for many years, yet due to the complexity of absorption mechanisms and experimental difficulties in the infrared, this is still a subject of research. Although measurements have been made in the past, a consistent model that worked for both picosecond and nanosecond pulse widths had not been demonstrated. In this project, temperature dependent two-photon (2PA) and free carrier absorption (FCA) spectra of InSb are measured using femtosecond, picosecond, and nanosecond IR sources. The 2PA spectrum is measured at room temperature w

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McConville, Daniel. "Carrier recombination in dilute nitride based near infrared semiconductor lasers." Thesis, University of Surrey, 2007. http://epubs.surrey.ac.uk/844606/.

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This thesis describes and quantifies the roles of the different carrier recombination processes within near infrared GaInNAs single quantum well laser devices. An initial review of the published literature relating to GaInNAs highlighted a number of areas where investigation of the material system would be interesting, including changing the nitrogen concentration, the barrier material, the incorporated strain and the growth technique. We find that at 1.3mum, at room temperature, the threshold current of MBE grown devices is composed of 70% Auger recombination, 25% monomolecular recombination

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GATTI, ELEONORA. "Recombination processes and carrier dynamics in Ge/SiGe multiple quantum wells." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2012. http://hdl.handle.net/10281/28451.

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Ge/SiGe quantum wells (QWs) are a new system characterized by optical and electronic properties different from those commonly observed in the more widely studied QWs based on III-V semiconductors. These peculiar properties are due to the type-I band alignment for both the Γ- and the L-type states and to the small energy distance between the direct and the indirect bad gap in Ge, which provides Ge/SiGe QWs with a so-called quasi-direct optical behavior. Moreover, these systems are of potential interest for the integration of good optical properties on the CMOS platform: indeed, room temperature

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Thota, Venkata Ramana Kumar. "Tunable Optical Phenomena and Carrier Recombination Dynamics in III-V Semiconductor Nanostructures." Ohio University / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1451807323.

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Naidu, Deepal. "Characterisation of lateral carrier out-diffusion and surface recombination in ridge waveguide devices." Thesis, Cardiff University, 2009. http://orca.cf.ac.uk/54892/.

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As laser devices are scaled down in size and involve the use of photonic structures etched through the active layer - a trend driven by the desire to improve device performance and functionality for future applications in optoelectronic integrated circuits - performance limiting mechanisms such as an increasing internal optical loss, deteriorating gain-mode overlap, lateral carrier out-diffusion and surface recombination can inflict restrictions on the further miniaturisation and overall performance. In this project I have separately evaluated the relative impact of these mechanisms using ridg

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Ivanov, Ruslan. "Impact of carrier localization on recombination in InGaN quantum wells with nonbasal crystallographic orientations." Doctoral thesis, KTH, Optik och Fotonik, OFO, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-214599.

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The modern InGaN technology demonstrates high efficiencies only in the blue spectral region and low current operation modes. The growth of InGaN quantum wells (QWs) on nonbasal crystallographic planes (NBP) has potential to deliver high-power blue and green light emitting diodes and lasers. The emission properties of these QWs are largely determined by the localization of carriers in the minima of spatially inhomogeneous band potential, which affects the recombination dynamics, spectral characteristics of the emission, its optical polarization and carrier transport. Understanding it is crucial

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Sieland, Fabian [Verfasser], and Detlef W. [Akademischer Betreuer] Bahnemann. "Fractal charge carrier recombination kinetics in photocatalytic systems / Fabian Sieland ; Betreuer: Detlef W. Bahnemann." Hannover : Gottfried Wilhelm Leibniz Universität Hannover, 2018. http://d-nb.info/1172414157/34.

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Books on the topic "Carrier recombination"

1

Orton, J. W. The electrical characterization of semiconductors: Measurement of minority carrier properties. Academic Press, 1990.

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2

Davidson, J. A. Minority carrier processes and recombination at point and extended defects in silicon. UMIST, 1996.

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3

Edward, Swirhun Stanley, Swanson Richard M, and United States. National Aeronautics and Space Administration, eds. Measurement of carrier transport and recombination parameter in heavily doped silicon: Final report. Solid State Electronics Laboratory, Stanford Electronics Laboratories, Dept. of Electrical Engineering, Stanford University, 1986.

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4

Reggiani, L. Recombination and ionization processes at impurity centres in hot-electron semiconductor transport. Editrice Compositori, 1989.

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5

E, Vance Dennis, and Vance Jean E, eds. Biochemistry of lipids, lipoproteins, and membranes. Elsevier, 1991.

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6

Measurement of Ultrafast Carrier Recombination Dynamics in Mid-Infrared Semiconductor Laser Material. Storming Media, 1997.

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7

Orton, J. W., and P. Blood. The Electrical Characterization of Semiconductors: Measurement of Minority Carrier Properties (Techniques of Physics). Academic Press, 1992.

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8

Deviation of Time-Resolved Luminescence Dynamics in MWIR Semiconductor Materials from Carrier Recombination Theory Predictions. Storming Media, 2004.

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9

Voll, Reinhard E., and Barbara M. Bröker. Innate vs acquired immunity. Oxford University Press, 2013. http://dx.doi.org/10.1093/med/9780199642489.003.0048.

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The innate and the adaptive immune system efficiently cooperate to protect us from infections. The ancient innate immune system, dating back to the first multicellular organisms, utilizes phagocytic cells, soluble antimicrobial peptides, and the complement system for an immediate line of defence against pathogens. Using a limited number of germline-encoded pattern recognition receptors including the Toll-like, RIG-1-like, and NOD-like receptors, the innate immune system recognizes so-called pathogen-associated molecular patterns (PAMPs). PAMPs are specific for groups of related microorganisms

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Book chapters on the topic "Carrier recombination"

1

Böer, Karl W. "Carrier Recombination." In Handbook of the Physics of Thin-Film Solar Cells. Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-36748-9_22.

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2

Böer, Karl W. "Carrier Recombination." In Survey of Semiconductor Physics. Springer US, 1990. http://dx.doi.org/10.1007/978-1-4615-9744-5_43.

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Böer, Karl W., and Udo W. Pohl. "Carrier Recombination and Noise." In Semiconductor Physics. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-06540-3_30-1.

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4

Böer, Karl W., and Udo W. Pohl. "Carrier Recombination and Noise." In Semiconductor Physics. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-06540-3_30-2.

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Böer, Karl W., and Udo W. Pohl. "Carrier Recombination and Noise." In Semiconductor Physics. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-319-06540-3_30-3.

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Böer, Karl W., and Udo W. Pohl. "Carrier Recombination and Noise." In Semiconductor Physics. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-69150-3_30.

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7

Böer, Karl W., and Udo W. Pohl. "Carrier Recombination and Noise." In Semiconductor Physics. Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-319-06540-3_30-4.

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Böer, Karl W., and Udo W. Pohl. "Carrier Recombination and Noise." In Semiconductor Physics. Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-18286-0_30.

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Bisquert, Juan. "Light Absorption, Carrier Recombination, and Luminescence." In The Physics of Solar Cells. CRC Press, 2017. http://dx.doi.org/10.1201/b22380-2.

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10

Ley, L., and M. Hundhausen. "Carrier Recombination Kinetics in Amorphous Doping Superlattices." In Disordered Semiconductors. Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1841-5_59.

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Conference papers on the topic "Carrier recombination"

1

Kalem, Seref, and Villy Sundstrom. "Excited Carrier Recombination in Black Silicon." In 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). IEEE, 2020. http://dx.doi.org/10.1109/eurosoi-ulis49407.2020.9365291.

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Poonia, Ajay K., Wasim J. Mir, Megha Shrivastava, Angshuman Nag, and K. V. Adarsh. "Thermal assisted carrier recombination in CsPbBr3 nanocrystals." In CLEO: Science and Innovations. OSA, 2020. http://dx.doi.org/10.1364/cleo_si.2020.sth4h.7.

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3

Vandewal, Koen. "Emissive Free Carrier Recombination in Organic Photovoltaics." In Materials for Sustainable Development Conference (MAT-SUS). FUNDACIO DE LA COMUNITAT VALENCIANA SCITO, 2022. http://dx.doi.org/10.29363/nanoge.nfm.2022.129.

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4

Chen, Y. C., R. G. Waters, J. J. Coleman, D. P. Bour, and P. Wang. "Carrier recombination rates in GaAs and InGaAs quantum-well lasers." In OSA Annual Meeting. Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.tun4.

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The carrier recombination rates in GaAs1 and strained InGaAs/GaAs single-quantumwell lasers have been studied using the differential carrier-lifetime technique for carrier densities from 1017-1019/cm3. We have found that the carrier lifetime is not an intrinsic property of the material but is strongly structure-dependent. Under high levels of excitation, the recombination rates deviate considerably from the recombination rules of the bulk materials. The rates are typically smaller in quantum wells that have lower potential barriers and/or thinner well widths. The rates increase sublinearly wit

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5

Heyen, E. T., M. Hagerott, A. V. Nurmikko, and D. L. Partin. "Free Carrier Radiative Recombination in 2D: PbTe Quantum Wells." In Quantum Wells for Optics and Opto-Electronics. Optica Publishing Group, 1989. http://dx.doi.org/10.1364/qwoe.1989.mc4.

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There have been a number of studies aimed at isolating radiative recombination in semiconductor quantum wells, a process which in many instances is strongly influenced by excitonic effects such as in III-V (e.g. GaAs [1]) or wide-gap II-VI (e.g. ZnSe [2]) semiconductor heterostructures. Recently, Matsusue and Sakaki have exploited modulation doped GaAs/(Ga,Al)As multiple quantum wells (MQW) to show how radiative recombination of a quasi-two dimensional (2D) free electron-hole gas can be distinctly identified while reducing excitonic complications [3]. In narrow-gap semiconductors, such as PbTe

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6

Hader, J., J. Moloney, S. Koch, L. Fan, and M. Fallahi. "Carrier Recombination in Semiconductor Lasers: Beyond the ABC." In 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices. IEEE, 2006. http://dx.doi.org/10.1109/nusod.2006.306730.

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Zheng, Jim P., and HoiSing Kwok. "Mechanism of the carrier recombination in semiconductor dots." In OE/LASE '94, edited by Gottfried H. Doehler and Emil S. Koteles. SPIE, 1994. http://dx.doi.org/10.1117/12.175720.

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Hader, J., J. V. Moloney, and S. W. Koch. "Beyond the ABC: carrier recombination in semiconductor lasers." In Integrated Optoelectronic Devices 2006, edited by Marek Osinski, Fritz Henneberger, and Yasuhiko Arakawa. SPIE, 2006. http://dx.doi.org/10.1117/12.641744.

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Sandmann, J. H. H., S. Grosse, J. Feldmann, et al. "Carrier Relaxation and Recombination Dynamics in InGaAs/GaAs quantum dots." In International Conference on Ultrafast Phenomena. Optica Publishing Group, 1996. http://dx.doi.org/10.1364/up.1996.thb.3.

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We present results of time-resolved photoluminescence (PL) studies performed on InGaAs quantum dots (QD) of remarkably high optical quality. Characteristic QD properties in the relaxation and recombination scenario such as delay of relaxation by Pauli-blocking, inefficient inter-dot-state relaxation by phonon scattering and a temperature independent recombination lifetime are observed. In addition, we find that fast and efficient Coulomb-scattering speeds up the carrier relaxation between QD states, i.e. down to the lowest QD ground state.

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Krinke, J., M. Albrecht, W. Dorsch, et al. "Grain boundaries in silicon: microstructure and minority carrier recombination." In Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996. IEEE, 1996. http://dx.doi.org/10.1109/pvsc.1996.564046.

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Reports on the topic "Carrier recombination"

1

S Anikeev, D Donetsky, G Belenky, et al. Effects of Radiative Recombination and Photon Recycling on Minority Carrier Lifetime in Epitaxial GaINAsSb Lattice-matched to GaSb. Office of Scientific and Technical Information (OSTI), 2004. http://dx.doi.org/10.2172/836448.

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Pawlowski, Wojtek P., and Avraham A. Levy. What shapes the crossover landscape in maize and wheat and how can we modify it. United States Department of Agriculture, 2015. http://dx.doi.org/10.32747/2015.7600025.bard.

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Meiotic recombination is a process in which homologous chromosomes engage in the exchange of DNA segments, creating gametes with new genetic makeup and progeny with new traits. The genetic diversity generated in this way is the main engine of crop improvement in sexually reproducing plants. Understanding regulation of this process, particularly the regulation of the rate and location of recombination events, and devising ways of modifying them, was the major motivation of this project. The project was carried out in maize and wheat, two leading crops, in which any advance in the breeder’s tool

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Levin, Ilan, John W. Scott, Moshe Lapidot, and Moshe Reuveni. Fine mapping, functional analysis and pyramiding of genes controlling begomovirus resistance in tomato. United States Department of Agriculture, 2014. http://dx.doi.org/10.32747/2014.7594406.bard.

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Abstract. Tomato yellow leaf curl virus (TYLCV), a monopartitebegomovirus, is one of the most devastating viruses of cultivated tomatoes and poses increasing threat to tomato production worldwide. Because all accessions of the cultivated tomato are susceptible to these viruses, wild tomato species have become a valuable resource of resistance genes. QTL controlling resistance to TYLCV and other begomoviruses (Ty loci) were introgressed from several wild tomato species and mapped to the tomato genome. Additionally, a non-isogenic F₁diallel study demonstrated that several of these resistance sou

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