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Journal articles on the topic 'Capping Layer'

Author: Grafiati
Published: 4 June 2021
Last updated: 19 February 2023

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1

You, Jung-Joo, and Kyoo-Sik Bae. "Interdiffusion in Cu/Capping Layer/NiSi Contacts." Korean Journal of Materials Research 17, no. 9 (September 27, 2007): 463–68. http://dx.doi.org/10.3740/mrsk.2007.17.9.463.

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2

Zhai, Minglong, Xueyuan Liu, Hudong Chang, Honggang Liu, and Bing Sun. "Comparative Study of the New Type Capping Layer for Hf0.5Zr0.5O2 Ferroelectric Film." Journal of Physics: Conference Series 2160, no. 1 (January 1, 2022): 012018. http://dx.doi.org/10.1088/1742-6596/2160/1/012018.

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Abstract The capping layers have great influences on the ferroelectricity of the Hf0.5Zr05O2 (HZO) film during annealing process. In this paper we compared the properties of the HZO film with two inorganic nonmetallic capping layers and no capping layer. The remnant (2Pr) of HZO films are 23.5 uC/cm2, 27.3 uC/cm2 and 20.3 uC/cm2 for no capping layer, Si3N4 capping layer and SiO2 capping layer, respectively. The capping layer can change the direction of the coercive filed shift even though the capacitors have the same metal electrodes.
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3

Shin, Min-Gyu, Kang-Hwan Bae, Hyun-Seok Cha, Hwan-Seok Jeong, Dae-Hwan Kim, and Hyuck-In Kwon. "Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors." Materials 13, no. 14 (July 8, 2020): 3055. http://dx.doi.org/10.3390/ma13143055.

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We utilized Ni as a floating capping layer in p-channel SnO thin-film transistors (TFTs) to improve their electrical performances. By utilizing the Ni as a floating capping layer, the p-channel SnO TFT showed enhanced mobility as high as 10.5 cm2·V−1·s−1. The increase in mobility was more significant as the length of Ni capping layer increased and the thickness of SnO active layer decreased. The observed phenomenon was possibly attributed to the changed vertical electric field distribution and increased hole concentration in the SnO channel by the floating Ni capping layer. Our experimental results demonstrate that incorporating the floating Ni capping layer on the channel layer is an effective method for increasing the field-effect mobility in p-channel SnO TFTs.
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4

Kim, Yong Jin, Chel Jong Choi, Soon Young Oh, Jang Gn Yun, Won Jae Lee, Hee Hwan Ji, Jin Suk Wang, and Hi Deok Lee. "Improvement of Thermal Stability of Nickel Silicide Using Multi-Capping Structure." Solid State Phenomena 121-123 (March 2007): 1261–64. http://dx.doi.org/10.4028/www.scientific.net/ssp.121-123.1261.

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In this paper, the electrical properties of NiSi have been characterized using multi capping layer structure for nano CMOS application. We have investigated the formation and thermal stability of Ni silicide using Ni, Ti and TiN capping layers (Ti/Ni/TiN) as a function of Rapid Thermal Processing (RTP) temperature. It was shown that the NiSi with multi capping layer has lower sheet resistances than that with single capping (TiN) layer. NiSi with multi capping layer also showed much better thermal stability. It was verified that the formation Ni-Ti-Si ternary like layer at the top region of thhe NiSi results in improvement of thermal stability.
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5

Kim, Yongchan, Sanghyun Woo, Hyungchul Kim, Jaesang Lee, Honggyu Kim, Hyerin Lee, and Hyeongtag Jeon. "Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition." Journal of Materials Research 25, no. 10 (October 2010): 1898–903. http://dx.doi.org/10.1557/jmr.2010.0245.

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The physical and electrical properties of La2O3 with and without an Al2O3 capping layer deposited by remote plasma atomic layer deposition were investigated. The electrical properties of the La2O3 films degraded due to the formation of lanthanum hydroxide after being exposed to air. The results of x-ray photoemission spectroscopy showed that the quantity of OH groups absorbed increased after exposure to air. For La2O3 with an Al2O3 capping layer, however, the electrical properties of the film did not change substantially because the capping layer effectively suppressed the formation of lanthanum hydroxide. The capacitance of the La2O3 decreased more than 30% after exposure to air, while La2O3 with an Al2O3 capping layer decreased by only about 4%. The VFB value of the La2O3 with an Al2O3 capping layer was near zero, and the hysteresis was about 120 mV. The leakage current densities of the film were maintained below 5 × 10−7 A/cm2 up to −15 MV/cm and the effective breakdown field was about −23.5 MV/cm.
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6

Cheng, Yi-Lung, and Ying-Lang Wang. "Effect of Interfacial Condition on Electromigration for Narrow and Wide Copper Interconnects." Journal of Nanoscience and Nanotechnology 8, no. 5 (May 1, 2008): 2494–99. http://dx.doi.org/10.1166/jnn.2008.573.

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The sub-micron damascene interconnects, electromigration is mainly due to the diffusion at the interfaces of Cu with liner or dielectric capping layer. Many reports have shown that Cu/capping dielectric is the dominant interface. Experiments were performed to study the effect of the interfacial conditions of Cu/capping dielectric material on electromigration for narrow and wide Cu lines. The results revealed significant differences in electromigration behavior of via-fed upper and lower layer damascene test structures. For upper layer test structure, the capping layer and plasma surface treatment significantly dominated EM performance for different line width structures. In the case of lower layer test structure, the electromigration time to failure was found to be influenced by the capping layer and via process, and it remained unaffected by the plasma surface treatment for the narrow Cu line. For the wide line width (3X), electromigration performance was influenced by the current crowding on via-bottom.
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7

Jeong, Kwang Seok, Yu Mi Kim, Ho Jin Yun, Seung Dong Yang, Sang Youl Lee, Hi Deok Lee, and Ga Won Lee. "Effect of Al2O3 Capping Layer in ZnO TFT Fabricated by Atomic Layer Deposition." Advanced Materials Research 658 (January 2013): 108–11. http://dx.doi.org/10.4028/www.scientific.net/amr.658.108.

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In this paper, the electrical and physical analysis is carried out to investigate the effect of Al2O3 capping layer on ZnO film using atomic layer deposition. ZnO TFTs shows the metallic conduction behavior as Al2O3 capping layer thickness increases. From SIMS analysis, it is found out that the diffusion of Al into ZnO film is enhanced according to Al2O3 capping layer thickness. Moreover, the defects related to oxygen such as oxygen vacancy increase from XPS analysis and ZnO films reveal less compressive stress by substitution of Zn with Al form XRD analysis. That is, the metallic conduction behavior of ZnO TFTs with Al2O3 capping layer can be explained due to increase in the carrier concentration in ZnO channel layer from oxygen vacancy and substitution of Zn with Al.
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8

Cha, Hyun-Seok, Hwan-Seok Jeong, Seong-Hyun Hwang, Dong-Ho Lee, and Hyuck-In Kwon. "Electrical Performance and Stability Improvements of High-Mobility Indium–Gallium–Tin Oxide Thin-Film Transistors Using an Oxidized Aluminum Capping Layer of Optimal Thickness." Electronics 9, no. 12 (December 20, 2020): 2196. http://dx.doi.org/10.3390/electronics9122196.

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We examined the effects of aluminum (Al) capping layer thickness on the electrical performance and stability of high-mobility indium–gallium–tin oxide (IGTO) thin-film transistors (TFTs). The Al capping layers with thicknesses (tAls) of 3, 5, and 8 nm were deposited, respectively, on top of the IGTO thin film by electron beam evaporation, and the IGTO TFTs without and with Al capping layers were subjected to thermal annealing at 200 °C for 1 h in ambient air. Among the IGTO TFTs without and with Al capping layers, the TFT with a 3 nm thick Al capping layer exhibited excellent electrical performance (field-effect mobility: 26.4 cm2/V s, subthreshold swing: 0.20 V/dec, and threshold voltage: −1.7 V) and higher electrical stability under positive and negative bias illumination stresses than other TFTs. To elucidate the physical mechanism responsible for the observed phenomenon, we compared the O1s spectra of the IGTO thin films without and with Al capping layers using X-ray photoelectron spectroscopy analyses. From the characterization results, it was observed that the weakly bonded oxygen-related components decreased from 25.0 to 10.0%, whereas the oxygen-deficient portion was maintained at 24.4% after the formation of the 3 nm thick Al capping layer. In contrast, a significant increase in the oxygen-deficient portion was observed after the formation of the Al capping layers having tAl values greater than 3 nm. These results imply that the thicker Al capping layer has a stronger gathering power for the oxygen species, and that 3 nm is the optimum thickness of the Al capping layer, which can selectively remove the weakly bonded oxygen species acting as subgap tail states within the IGTO. The results of this study thus demonstrate that the formation of an Al capping layer with the optimal thickness is a practical and useful method to enhance the electrical performance and stability of high-mobility IGTO TFTs.
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9

Liu, Z. Q., and J. Y. Feng. "CoSi2 formation using Ti-capping layer." Journal of Crystal Growth 235, no. 1-4 (February 2002): 561–66. http://dx.doi.org/10.1016/s0022-0248(01)01761-4.

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10

Schmitt, H., Volker Haeublein, Anton J. Bauer, and Lothar Frey. "Influence of Annealing Parameters on Surface Roughness, Mobility and Contact Resistance of Aluminium Implanted 4H SiC." Materials Science Forum 679-680 (March 2011): 417–20. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.417.

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The impact of implantation temperature and dose as well as the annealing process with and without a graphite capping layer on surface roughness, carrier mobility and specific contact resistance are investigated and compared. The use of the capping layer is proven to be particularly advantageous: (1) a deterioration of surface roughness can be avoided even for high dose implantations and (2) the specific contact resistance is reduced. Furthermore, it is shown that a capping layer prevents surface contamination during annealing.
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11

Quansah, Jude Ofei, Seung-Hee Hong, Chang-Gu Lee, and Seong-Jik Park. "Application of Activated Seashells and Sand Armor for Disrupting N and P Release from River Sediments." Water 14, no. 18 (September 15, 2022): 2875. http://dx.doi.org/10.3390/w14182875.

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We investigated the applicability of oyster (OS) and mussel shells (MS) as capping materials to inhibit the movement of nitrogen (N) and phosphorus (P) from river sediments. OS and MS are difficult to dispose of as waste, and have been used environmentally to clean up sediments contaminated with nitrogen and phosphorus. OS and MS increased the nutrient adsorption efficiency through simple heat treatment. The effectiveness of OS and MS capping with sand armor (SA) was evaluated in laboratory incubation experiments for 63 d. The sediments were capped with an active capping material (OS or MS) and then with either 1 cm or 3 cm SA. The pH and EC values were remarkably high under MS capping conditions because Ca2+ and Mg2+ were eluted from the MS material. The elution of Ca2+ and Mg2+ negatively affected the inhibition of NH4-N release by MS capping. OS capping demonstrated better performance for blocking the release of NH4-N and T-N than that of MS capping; the efficiency was enhanced by adding a 3 cm SA layer on top of the MS layer. In contrast, the PO4-P and T-P releases from the river sediments were effectively impeded by MS capping. OS capping with a 3 cm SA layer (OS/SA3) was recommended as the best capping strategy for inhibiting N and P releases from river sediments. The capping efficiencies of OS/SA3 for NH4-N, T-N, PO4-P, and T-P were 92.2%, 51.4%, 101.3%, and 93.3%, respectively.
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12

SONG, YOUNGSIK, and JAEWU CHOI. "ROLE OF TITANIUM CAPPING LAYER IN AMORPHOUS SILICON NANOWIRE GROWTH BY SOLID-STATE REACTION." Nano 01, no. 02 (September 2006): 159–65. http://dx.doi.org/10.1142/s179329200600015x.

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Role of titanium capping layer in synthesis of amorphous silicon nanowires by solid-state reaction was studied by Raman spectroscopy, energy dispersive spectroscopy, scanning electron microscopy and transmission electron microscopy. Silicon nanowires were not grown from 20nm thick nickel film on silicon (100) but grown from 20nm thick nickel film on silicon (100) with 100 nm thick titanium capping layer. The study shows that titanium capping layer plays an important role in formation of Ni–Ti–Si ternary alloy, which acts as a nucleation seed and a promoter for silicon nanowire growth.
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13

Honjo, H., T. V. A. Nguyen, M. Yasuhira, M. Niwa, S. Ikeda, H. Sato, and T. Endoh. "Effect of capping layer material on thermal tolerance of magnetic tunnel junctions with MgO/CoFeB-based free layer/MgO/capping layers." AIP Advances 9, no. 12 (December 1, 2019): 125330. http://dx.doi.org/10.1063/1.5129794.

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14

Yamada, Jumpei, Manabu Suzuki, Yuki Ueda, Takahiro Maruyama, and Shigeya Naritsuka. "Precipitation of high-quality multilayer-graphene using Al2O3 barrier and Au cap layers." MRS Proceedings 1786 (2015): 13–18. http://dx.doi.org/10.1557/opl.2015.766.

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ABSTRACTThe mechanism for the precipitation of multilayer graphene was investigated with respect to the use of an Al2O3 barrier layer and Au capping layer. The Al2O3 barrier layer suppresses the dissolution of carbon into the catalyst, especially at low temperature, and assists a decrease in the density of graphene nuclei. On the other hand, the Au capping layer is beneficial to weaken the strong binding between the catalyst and the graphene carbon atoms, and enhances the surface migration of precipitated carbon adatoms. A combination of the Al2O3 barrier layer and Au capping layer is useful for the synthesis of high-quality graphene with large grains. On a sample with both layers annealed for 60 min, the area of 5-layer graphene islands is as large as 10 μm, and covers 60% of the entire surface. The Raman D/G band intensity ratio of 0.024 indicates the precipitated graphene is high quality.
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15

Stumpff, C., and H. Sigmund. "Selective crystallization of silicon layers without seeding and capping layer." Applied Surface Science 36, no. 1-4 (January 1989): 605–13. http://dx.doi.org/10.1016/0169-4332(89)90956-2.

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16

Vopel, K., M. Gibbs, C. W. Hickey, and J. Quinn. "Modification of sediment - water solute exchange by sediment-capping materials: effects on O2 and pH." Marine and Freshwater Research 59, no. 12 (2008): 1101. http://dx.doi.org/10.1071/mf08130.

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The release of phosphorus from sediments can stimulate algal blooms in eutrophic water bodies worldwide. One technique to reduce this release involves capping the sediment with millimetre-thick layers of chemically active materials such as aluminium hydroxide floc (alum), and the mineral-based products Phoslock and modified zeolite. The effects of this technique on transport and reaction of diagenetically important sediment compounds other than phosphorus are unknown. The present study used microelectrodes to measure the apparent gas diffusivity of capping layers derived from different doses of these capping materials and their effects on pore water pH and dissolved molecular oxygen. The apparent O2 diffusivity of alum capping layers (1.58 × 10–5 cm2 s–1) was constant with depth and higher than that of mineral-based capping layers (~1.15 × 10–5 cm2 s–1 and decreasing with depth in the capping layer). The capping materials raised the depth of the oxic–anoxic interface and associated pH minimum and altered the sediment O2 consumption as functions of the capping-layer thickness and apparent diffusivity. Modified zeolite layers decreased pore water pH slightly (0.3–0.5 units); alum layers decreased pH by 1–2.2 units. It is proposed that capping layers derived from doses >200 g m–2 can alter benthic process rates and solute fluxes.
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17

Hartono, Noor Titan Putri, Marie-Hélène Tremblay, Sarah Wieghold, Benjia Dou, Janak Thapa, Armi Tiihonen, Vladimir Bulovic, et al. "Tailoring capping-layer composition for improved stability of mixed-halide perovskites." Journal of Materials Chemistry A 10, no. 6 (2022): 2957–65. http://dx.doi.org/10.1039/d1ta07870d.

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Incorporating a one-dimensional (1D) perovskite capping layer on top of a perovskite absorber, improves the stability of perovskite solar cells (PSCs). Dissimilarity matrices gives an stability comparison overview across capping-absorber pairs.
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18

Le Ster, M., J. R. Chan, B. J. Ruck, S. A. Brown, and F. Natali. "Removable capping layer for air-sensitive GdN." Nanotechnology 31, no. 27 (April 17, 2020): 275709. http://dx.doi.org/10.1088/1361-6528/ab82d3.

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19

Wang, L. G., P. Kratzer, M. Scheffler, and Q. K. K. Liu. "Island dissolution during capping layer growth interruption." Applied Physics A Materials Science & Processing 73, no. 2 (August 2001): 161–65. http://dx.doi.org/10.1007/s003390100854.

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20

Lapworth, A. J. "Wind profiles through boundary-layer capping inversions." Boundary-Layer Meteorology 39, no. 4 (June 1987): 333–78. http://dx.doi.org/10.1007/bf00125142.

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21

Lapworth, Alan. "Jets on daytime boundary layer capping inversions." Weather 65, no. 2 (February 2010): 50–55. http://dx.doi.org/10.1002/wea.424.

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22

Zenkevich, E., A. Stupak, and C. von Borczyskowski. "Temperature Dependence of Photoluminescence for Spin-Coated Semiconductor Quantum Dots and Quantum Dot-Dye Nanoassemblies on Quartz Substrate." International Journal of Nanoscience 18, no. 03n04 (March 26, 2019): 1940005. http://dx.doi.org/10.1142/s0219581x19400052.

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The attachment of pyridyl substituted porphyrin molecule to the surface of CdSe/ZnS quantum dots in solutions is realized in the competition with capping ligand TOPO molecules resulting in the specific change of photoluminescence for the quantum dots across the temperature range of 77–290[Formula: see text]K. We have shown that fixation of alone quantum dots or quantum dot-porphyrin nanoassemblies on quartz substrate changes significantly temperature dependence of photoluminescence. In contrast to the samples in a glass-forming solution no phase transition of the TOPO capping layer was observed upon removal of the capping layer.
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23

Du, Jianting, Rodolfo Bolaños, Xiaoli Guo Larsén, and Mark Kelly. "Wave boundary layer model in SWAN revisited." Ocean Science 15, no. 2 (April 10, 2019): 361–77. http://dx.doi.org/10.5194/os-15-361-2019.

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Abstract. In this study, we extend the work presented in Du et al. (2017) to make the wave boundary layer model (WBLM) applicable for real cases by improving the wind-input and white-capping dissipation source functions. Improvement via the new source terms includes three aspects. First, the WBLM wind-input source function is developed by considering the impact of wave-induced wind profile variation on the estimation of wave growth rate. Second, the white-capping dissipation source function is revised to be not explicitly dependent on wind speed for real wave simulations. Third, several improvements are made to the numerical WBLM algorithm, which increase the model's numerical stability and computational efficiency. The improved WBLM wind-input and white-capping dissipation source functions are calibrated through idealized fetch-limited and depth-limited studies, and validated in real wave simulations during two North Sea storms. The new WBLM source terms show better performance in the simulation of significant wave height and mean wave period than the original source terms.
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24

Al-Nahedh, HN, and Z. Alawami. "Fracture Resistance and Marginal Adaptation of Capped and Uncapped Bulk-fill Resin-based Materials." Operative Dentistry 45, no. 2 (March 1, 2020): E43—E56. http://dx.doi.org/10.2341/17-367-l.

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SUMMARY Objectives: This study tested the fracture resistance of capped and uncapped bulk-fill composite restorations and compared them to a conventional composite. Also, the effect of different radiant exposure was investigated. Methods and Materials: Flowable and high-viscosity bulk-fill composites (SureFil SDR, Filtek Bulk-Fill Posterior, and Tetric N-Ceram Bulk-Fill) and a nanohybrid resin composite (Filtek Z350 XT) were used. Standardized class II cavities were prepared on extracted premolars, and different restoration protocols were used. In protocol 1 (control), restoration was applied using a layering technique; in protocol 2, restoration was applied in bulk with a capping layer; in protocol 3, restoration was applied in bulk without a capping layer; and in protocol 4, restoration was applied in bulk without a capping layer, and the light curing time was extended. After thermocycling, the restorations were examined for marginal gaps and then subjected to the fracture resistance test using a universal testing machine. Statistical analysis was carried out using two-way analysis of variance (ANOVA) followed by one-way ANOVA at a significance level of α = 0.05. Results: A statistically significant difference in the fracture resistance of the tested materials and protocols was detected. Filtek Bulk-Fill Posterior achieved the highest fracture resistance values regardless of the protocol used, and its results were comparable to those of Filtek Z350. SDR and Tetric N-Ceram Bulk-Fill achieved their highest strengths when a capping layer was added. Tetric N-Ceram Bulk-Fill showed improvement in fracture resistance with extended light curing, while SDR and Tetric N-Ceram Bulk-Fill achieved similar results with the addition of a capping layer. The uncapped bulk-fill group showed more gap-free margins than the capped group. Conclusion: The new high-viscosity bulk-fill composite restorations seem to have adequate fracture resistance. However, the results are material dependent, and some materials perform better with a capping layer and extended light curing.
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25

Chao, Chen, De Qing Gan, Ling Qi Zhu, Ya Bin Zhang, and Hong Jian Lu. "Determine Coverlay Thickness According to Air Leakage Characteristics in Open Pit to Underground Overlay." Advanced Materials Research 567 (September 2012): 88–91. http://dx.doi.org/10.4028/www.scientific.net/amr.567.88.

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During surface-underground combined mining, the method to control the ground air leakage is adopted by the capping layer using the fragmented rocks and the discarded tailings. In order to study the air leakage characteristic with the capping, the porosity of the rock particles of seven sizes and the air leakage characteristics of the capping were studied and the relationship between the air leakage coefficient and amount of air leakage with the capping height were found basing on the laboratory analogue simulation tests. It can provide the theoretical basis for determining the capping height of iron mine.
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26

Oosthoek, Jasper L. M., Bart J. Kooi, Jeff T. M. De Hosson, Rob A. M. Wolters, Dirk J. Gravesteijn, and Karen Attenborough. "Growth Rate Determination through Automated TEM Image Analysis: Crystallization Studies of Doped SbTe Phase-Change Thin Films." Microscopy and Microanalysis 16, no. 3 (April 7, 2010): 291–99. http://dx.doi.org/10.1017/s1431927610000176.

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AbstractA computer-controlled procedure is outlined here that first determines the position of the amorphous-crystalline interface in an image. Subsequently, from a time series of these images, the velocity of the crystal growth front is quantified. The procedure presented here can be useful for a wide range of applications, and we apply the new approach to determine growth rates in a so-called fast-growth-type phase-change material. The growth rate (without nucleation) of this material is of interest for comparison with identical material used in phase-change random access memory cells. Crystal growth rates in the amorphous phase-change layers have been measured at various temperatures using in situ heating in a transmission electron microscope. Doped SbTe films (20 nm thick) were deposited on silicon nitride membranes, and samples with and without silicon oxide capping layer were studied. The activation energy for growth was found to be 3.0 eV. The samples without capping layer exhibit a nucleation rate that is an order of magnitude higher than the samples with a silicon oxide capping layer. This difference can be attributed to the partial oxidation of the phase-change layer in air. However, the growth rates of the samples with and without capping are quite comparable.
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27

Dash, J. K., L. Chen, T. M. Lu, G. C. Wang, L. H. Zhang, and K. Kisslinger. "Metal-enhanced Ge1−xSnx alloy film growth on glass substrates using a biaxial CaF2 buffer layer." CrystEngComm 16, no. 37 (2014): 8794–804. http://dx.doi.org/10.1039/c4ce01228c.

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The Ge1−xSnx(111) alloy formation process at the early stage and later stage of Ge deposition on a biaxial Sn/CaF2 (capping layer + NR)/glass substrate at an elevated growth temperature.
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28

Wei, Da-Hua, Ji-Hong Chang, Chi-Chun Hsu, Cheng-Jie Yang, Yuan-Chang Liang, Chung-Li Dong, and Yeong-Der Yao. "Controlled Magnetic Isolation and Decoupling of Perpendicular FePt Films by Capping Ultrathin Cu(002) Nano-Islands." Journal of Composites Science 5, no. 6 (May 21, 2021): 140. http://dx.doi.org/10.3390/jcs5060140.

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This study investigated the ultrathin Cu(002) capping nano-island effects on the magnetic characterizations and microstructure of epitaxial FePt(001) films directly fabricated on MgO(001) substrates at the relatively low temperature of 300 °C via electron-beam deposition. The enhancement of the coercivity is attributed to the lowered exchange coupling of FePt magnetic grains that begun from Cu atom behavior of spreading in many directions mainly along grain boundaries due to its lower surface energy than that of pure Fe or Pt. The measurement of angular-dependent coercivity shows a tendency of a domain-wall motion shift toward the rotation of the reverse-domain type upon the thickness of the Cu capping nano-island layer atop the FePt films. The intergranular interaction was clarified by the Kelly–Henkel plot, which indicated that there was strong exchange coupling (positive δM) between neighboring grains in the FePt continuous films without Cu capping nano-islands. On the other hand, a negative δM value was gained when the FePt films were capped with a Cu(002) single layer, indicating that the Cu capping layer can be used to control the strength of intergrain exchange coupling between the adjacent FePt grains and thicker Cu(002) capping nano-islands toward magnetic isolation; thus, there was an existence of dipole interaction in our designed Cu/FePt composite structure of stacked films.
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29

Fiorenza, Patrick, Alessia Frazzetto, Lukas K. Swanson, Filippo Giannazzo, and Fabrizio Roccaforte. "A Nanoscale Look in the Channel of 4H-SiC Lateral MOSFETs." Materials Science Forum 740-742 (January 2013): 699–702. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.699.

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In this work the field effect mobility measured on lateral n-channel MOSFETs in 4H-SiC with Al implanted body was correlated with the interface trap density measured on MOS capacitors. The test devices were fabricated on samples subjected to different post implantation annealing conditions (i.e. with or without a protective carbon capping layer) and to an identical post-oxidation annealing in N2O. Despite the improved interfacial morphology, a reduction of the peak mobility (from 40 to 24 cm2V-1s-1) was observed using the carbon capping layer. An increase in the density of interface traps was consistently found. Nanoscale measurements of the active dopant concentration in the SiC channel region by cross-sectional scanning capacitance microscopy showed an higher compensation of p-type SiC for the sample processed without the capping layer, which indicates a more efficient incorporation of nitrogen at the SiO2/SiC interface.
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30

Weng, Ming Hung, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore di Franco, Corrado Bongiorno, Mario Saggio, and Vito Raineri. "Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC." Materials Science Forum 645-648 (April 2010): 713–16. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.713.

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This paper reports on the electrical activation and structural analysis of Al implanted 4H-SiC. The evolution of the implant damage during high temperature (1650 – 1700 °C) annealing results in the presence of extended defects and precipitates, whose density and depth distribution in the implanted sheet was accurately studied for two different ion fluences (1.31014 and 1.31015 cm-2) by transmission electron microscopy. Furthermore, the profiles of electrically active Al were determined by scanning capacitance microscopy. Only a limited electrical activation (10%) was measured for both fluences in the samples annealed without a capping layer. The use of a graphite capping layer to protect the surface during annealing showed a beneficial effect, yielding both a reduced surface roughness and an increased electrical activation (20% for the highest fluence and 30% for the lowest one) with respect to samples annealed without the capping layer.
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31

Sun, Chi, Zhuo Bin Siu, Seng Ghee Tan, Hyunsoo Yang, and Mansoor B. A. Jalil. "Effect of capping layer on spin-orbit torques." Journal of Applied Physics 123, no. 15 (April 21, 2018): 153901. http://dx.doi.org/10.1063/1.5023670.

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32

Chang, S. J., C. H. Chen, P. C. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H. Hung, S. M. Wang, and B. R. Huang. "Nitride-based LEDs with p-InGaN capping layer." IEEE Transactions on Electron Devices 50, no. 12 (December 2003): 2567–70. http://dx.doi.org/10.1109/ted.2003.820131.

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33

Yi, Seol-Min, Cheonman Shim, Han-Choon Lee, Jae-Won Han, Kee-Ho Kim, and Young-Chang Joo. "Effect of capping layer and post-CMP surface treatments on adhesion between damascene Cu and capping layer for ULSI interconnects." Microelectronic Engineering 85, no. 3 (March 2008): 621–24. http://dx.doi.org/10.1016/j.mee.2007.11.006.

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34

Hwang, Cheol Seong, Ju Cheol Shin, Jae Bin Lee, Jae-hoo Park, Young Jin Cho, Hyeong Joon Kim, Sang Yung Lee, and Soon Oh Park. "The effects of capping barrier layers on the compositional and structural variations of integrated Pb(Zr, Ti)O3 ferroelectric capacitor having the dimension 3 × 3 μm2." Journal of Materials Research 14, no. 5 (May 1999): 2053–60. http://dx.doi.org/10.1557/jmr.1999.0277.

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Structure and composition of the ferroelectric Pb(Zr, Ti)O3 layers in a capacitor of the ferroelectric random-access memory (FeRAM) device having a density of 64 k were investigated by transmission electron microscopy (TEM) together with the energy-dispersive spectroscopy (EDS) technique. The 250 nm thick PZT layer derived by the sol-gel route showed a 2–3% Pb-deficient, 3–4% Ti-deficient, and 5–7% Zr-excess composition at the top electrode interface compared to the bulk composition when they were as-fabricated. The local compositional nonuniformity became more critical as the integration process proceeded, which seriously degraded the ferroelectric hysteresis and the device yield. The major cause of the compositional variation was the outward diffusion of Pb through the capping barrier TiO2 layer during annealing at 650 °C. The AlN capping barrier layer was also not effective in suppressing the diffusion of Pb. However, the Al2O3/TiO2 double capping layer was very effective in suppressing the outward diffusion of Pb, and excellent ferroelectric characteristic was expected.
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35

Yang, T., A. Hirohata, T. Kimura, and Y. Otani. "Manipulating Spin Current in the Magnetic Nanopillar." Journal of Nanoscience and Nanotechnology 7, no. 1 (January 1, 2007): 259–64. http://dx.doi.org/10.1166/jnn.2007.18021.

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Because of the capability to switch the magnetization of a nanoscale magnet, the spin transfer effect is critical for the application of magnetic random access memory. For this purpose, it is important to enhance the spin current carried by the charge current. Calculations based on the diffusive spin-dependent transport equations reveal that the magnitude of spin current can be tuned by modifying the ferromagnetic layer and the spin relaxation process in the device. Increasing the ferromagnetic layer thickness is found to enhance both the spin current and the spin accumulation. On the other hand, a strong spin relaxation in the capping layer also increases the spin current but suppresses the spin accumulation. To demonstrate the theoretical results, nanopillar structures with the size of ∼100 nm are fabricated and the current-induced magnetization switching behaviors are experimentally studied. When the ferromagnetic layer thickness is increased from 3 nm to 20 nm, the critical switching current for the current-induced magnetization switching is significantly reduced, indicating the enhancement of the spin current. When the Au capping layer with a short spin-diffusion length replaces the Cu capping layer with a long spin-diffusion length, the reduction of the critical switching current is also observed.
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36

Du, Cui Feng, and Bin Li. "Experiment Study on the Relationship between the Height of Capping Layer and the Porosity of Broken Rocks." Advanced Materials Research 594-597 (November 2012): 2323–30. http://dx.doi.org/10.4028/www.scientific.net/amr.594-597.2323.

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The gas seepage characteristics of four kinds of broken rocks of different gradations and the relationship between the capping height and the porosity were studied by means of the simulation experiment and the theoretical analysis. The results show that the air flow in the capping layer composed of broken rocks is in the non-Darcy state which can be described as Forchheimer equation and Ergun equation. Moreover, on the basis of the experimental data, the relational expressions between the permeability, the non-Darcy β factor and the porosity were determined. Through the numerical fitting, the equation of the minimum capping height and the porosity was ultimately derived, which provided the basis and the reference for the determination of capping height and the air leakage control of mine.
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37

Suraprapapich, S., S. Thainoi, S. Kanjanachuchai, and S. Panyakeow. "Self-Assembled InAs Lateral Quantum Dot Molecules Growth on (001) GaAs by Thin-Capping-and-Regrowth MBE Technique." Solid State Phenomena 121-123 (March 2007): 395–400. http://dx.doi.org/10.4028/www.scientific.net/ssp.121-123.395.

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InAs lateral quantum dot molecules (QDMs) are grown on (001)-GaAs substrates. The self-assembled QDMs are formed in one continuous molecular beam epitaxial (MBE) growth via a thin-capping-and-regrowth technique. Lateral QDMs, each with 10-12 dots arranged in a specific pattern, are determined by the shapes of the underlying nanopropeller quantum dots (QDs). The nanopropeller QDs in turn are obtained by regrowth on nano-holes which have been previously created by capping the first InAs QD layer grown on (001)-GaAs substrate with a thin GaAs layer. The length of the propeller directly influences the number of QDs in a QDM. By varying the conditions for thin-capping, shorter or longer propellers can be achieved, allowing the number of QDs in each QDM to be controlled.
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38

Qiao, Ling, and Fu Ying Tan. "Instability and Pattern Formation of Thin Liquid Films Sandwiched between Soft Elastomer Layers." Materials Science Forum 745-746 (February 2013): 417–23. http://dx.doi.org/10.4028/www.scientific.net/msf.745-746.417.

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The surface instability of trilayer films consisting of a fluid layer sandwiched in between the two thin elastomer capping layers was studied. The solid-liquid-solid sandwiched films will form well-defined periodic surface buckling spontaneously. In the present study, the flow of the sandwiched liquid layer was approximated by the theory of lubrication. The elastic capping films was modeled with the nonlinear theory of a thin plate. A linear stability analysis identified the growth rate and the critical wave number of the surface undulation of trilayer films. The analysis showed that applied deformation in the capping layers regulated the surface buckling and resulted in well-defined periodic surface corrugation with tunable wavelength. The result of this study may provide a mechanism to control the morphology of the films in a mechanical way.
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39

Makino, T., K. Tamura, C. H. Chia, Y. Segawa, M. Kawasaki, A. Ohtomo, and H. Koinuma. "Effect of MgZnO-layer capping on optical properties of ZnO epitaxial layers." Applied Physics Letters 81, no. 12 (September 16, 2002): 2172–74. http://dx.doi.org/10.1063/1.1506783.

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40

Bekele, Zelalem Abebe, Kangkang Meng, Jun Miao, Xiaoguang Xu, and Yong Jiang. "Modulated spin orbit torque in ultrathin ferromagnetic layer with different capping layers." Surface and Coatings Technology 359 (February 2019): 354–59. http://dx.doi.org/10.1016/j.surfcoat.2018.12.076.

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41

Choi, Gyung-Min, Byoung-Chul Min, and Kyung-Ho Shin. "L10 ordering of FePtB layers by oxidation-induced stress of capping layer." Applied Physics A 111, no. 2 (January 18, 2013): 389–94. http://dx.doi.org/10.1007/s00339-012-7512-3.

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42

Jin, Zhi, Shuren Yang, Chunsheng Ma, Haiyan An, Benzhong Wang, and Shiyong Liu. "Effect of non-strained capping layer on excess stress in strained layers." Science in China Series A: Mathematics 42, no. 5 (May 1999): 523–27. http://dx.doi.org/10.1007/bf02882248.

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43

Kan, Jimmy J., Matthias Gottwald, Chando Park, Xiaochun Zhu, and Seung H. Kang. "Thermally Robust Perpendicular STT-MRAM Free Layer Films Through Capping Layer Engineering." IEEE Transactions on Magnetics 51, no. 12 (December 2015): 1–5. http://dx.doi.org/10.1109/tmag.2015.2463759.

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44

Ferrari, S., F. Perissinotti, E. Peron, L. Fumagalli, D. Natali, and M. Sampietro. "Atomic layer deposited Al2O3 as a capping layer for polymer based transistors." Organic Electronics 8, no. 4 (August 2007): 407–14. http://dx.doi.org/10.1016/j.orgel.2007.02.004.

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45

Yang, Byung Chan, Seunghyeon Kye, Dohyun GO, Jeong Woo Shin, Hyong June Kim, Gu Young Cho, and Jihwan An. "Yttria-Stabilized Zirconia Capping Layer on Pt Cathode By Atomic Layer Deposition." ECS Meeting Abstracts MA2020-02, no. 40 (November 23, 2020): 2581. http://dx.doi.org/10.1149/ma2020-02402581mtgabs.

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46

Azcue, José M., Alex J. Zeman, Alena Mudroch, Fernando Rosa, and Tim Patterson. "Assessment of sediment and porewater after one year of subaqueous capping of contaminated sediments in Hamilton Harbour, Canada." Water Science and Technology 37, no. 6-7 (March 1, 1998): 323–29. http://dx.doi.org/10.2166/wst.1998.0768.

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In this manuscript, we present data from a demonstration in situ capping site (100 m × 100 m) in Hamilton Harbour, Lake Ontario, Canada. A layer of clean medium to coarse sand with the average thickness of 35 cm was placed at the site in the summer of 1995. Concentration of Zn, Cr, and Cd in the original sediments reached values over 6000, 300 and 15 μg/g, respectively. The predicted consolidation of the uppermost one meter of sediment was about 14 cm, which was in good agreement with values obtained from comparisons of moisture content values of pre-capping and post-capping cores. A thin layer of fresh moderately contaminated sediments has started to develop on the top of the cap. In general, the concentrations of elements were greater in porewater than in the overlying water, e.g., the concentration of Fe and soluble reactive phosphorus were 1000 times, and those of Mn 100 times greater. There was a significant reduction in the vertical fluxes of all the trace elements after the capping of the contaminated sediments.
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47

Lee, Gun Hee, Ah Hyun Park, Jin Hong Lim, Chil-Hyoung Lee, Dae-Woo Jeon, Young-Baek Kim, Jongho Lee, Jeon Wook Yang, Eun-Kyung Suh, and Tae Hoon Seo. "Boron Nitride as a Passivation Capping Layer for AlGaN/GaN High Electron Mobility Transistors." Journal of Nanoscience and Nanotechnology 20, no. 7 (July 1, 2020): 4450–53. http://dx.doi.org/10.1166/jnn.2020.17587.

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We report on the electrical characteristics of AlGaN/GaN high-electron mobility transistors (HEMTs) with hexagonal boron nitride (h-BN) as a passivation capping layer. The HEMTs with h-BN layers showed an increase in current drainage and 103-times reduction in the gate-leakage current compared with those of conventional unpassivated HEMTs. Moreover, the extrinsic transconductance and the pulse responses were improved due to the reduced charge-trapping effect at the surface of HEMTs. From our observations, the h-BN can be used as a passivation capping layer for high-power electronic devices.
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48

Liu, Genchang, Qiushi Huang, Runze Qi, Hangjian Ni, Yufei Feng, Zhong Zhang, and Zhanshan Wang. "Internal Structure and Temporal Stability of Hard X-ray Pd/B4C Multilayer Mirrors under Different Humidity Environments." Coatings 11, no. 3 (February 24, 2021): 262. http://dx.doi.org/10.3390/coatings11030262.

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Pd/B4C multilayers with 2.5 nm of d-spacing and thick Si and B4C capping layers were fabricated to study temporal stability under storage in different environments with relative humidity of 10% and 50%. The two stored samples were investigated using grazing incidence X-ray reflectometry (GIXR), X-ray scattering (XRS), an optical microscope, transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS). The GIXR results showed that the reflectivity of the samples under 10% humidity and 50% humidity dropped by 3% and 8%, respectively, after 13 months. The optical microscope showed that the surface of the 10% humidity sample was smooth and undamaged, whereas the surface of the 50% humidity sample significantly eroded. TEM showed that the internal multilayer structure of the sample stored in 10% humidity was well protected by the capping layers. For the sample stored in 50% humidity, a major part of the Si and B4C capping layers were wrinkled and delaminated, and some surface layers of the multilayer structure were degraded with severe diffusion of boron. The XPS results showed a relatively large amount of oxygen in the B4C capping layer of the 50% humidity sample, and an obvious oxidation of the boron was found in the B4C capping layer and the surface of the multilayer. The severe oxidation and diffusion of boron and the delamination of the capping layers caused the degradation of the Pd/B4C multilayers stored in 50% humidity.
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49

Ye, Zhi, Hong Nguyen, Shih-Wei Feng, Hsiang-Chen Wang, and Hwei-Ling Chou. "Carrier Dynamics in InGaN/GaN on the Basis of Different In Concentrations." Applied Sciences 9, no. 11 (June 3, 2019): 2279. http://dx.doi.org/10.3390/app9112279.

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InGaN/GaN samples grown on c-plane sapphire substrate with different In concentrations by metal organic chemical vapor deposition are demonstrated. The subsequent capping GaN layer growth opens a possibility for dislocation reduction due to the lateral strain relaxation in growth geometry. We present the further growth optimization and innovative characterization of InGaN layers overgrown on different structures with varying In concentrations. The photoelectrical and optical properties of the InGaN layers with/without capping GaN layer are investigated by time-resolved picosecond transient grating and temperature dependence photoluminescence. We note a 10-fold increase in carrier lifetime in the InGaN layers when the sample structure changed from PIN to single InGaN layer.
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50

West, Matthew P., Fabia F. Athena, Samuel Graham, and Eric M. Vogel. "Bias history impacts the analog resistance change of HfOx-based neuromorphic synapses." Applied Physics Letters 122, no. 6 (February 6, 2023): 063502. http://dx.doi.org/10.1063/5.0134461.

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Resistive random-access memory (RRAM) devices have been widely studied for neuromorphic, in-memory computing. One of the most studied RRAM structures consists of a titanium capping layer and a HfOx adaptive oxide. Although these devices show promise in improving neuromorphic circuits, high variability, non-linearity, and asymmetric resistance changes limit their usefulness. Many studies have improved linearity by changing materials in or around the device, the circuitry, or the analog bias conditions. However, the impact of prior biasing conditions on the observed analog resistance change is not well understood. Experimental results in this study demonstrate that prior higher reset voltages used after forming cause a greater resistance change during subsequent identical analog pulsing. A multiphysics finite element model suggests that this greater analog resistance change is due to a higher concentration of oxygen ions stored in the titanium capping layer with increasing magnitude of the reset voltage. This work suggests that local ion concentration variations in the titanium capping layer of just tens of atoms cause significant resistance variation during analog operation.
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