Relevant bibliographies by topics / C54-TiSi2

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Academic literature on the topic 'C54-TiSi2'

Author: Grafiati
Published: 25 May 2024

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Journal articles on the topic "C54-TiSi2"

1

Cabral, C., L. A. Clevenger, J. M. E. Harper, F. M. d'Heurle, R. A. Roy, K. L. Saenger, G. L. Miles, and R. W. Mann. "Lowering the formation temperature of the C54-TiSi2 phase using a metallic interfacial layer." Journal of Materials Research 12, no. 2 (February 1997): 304–7. http://dx.doi.org/10.1557/jmr.1997.0040.

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We demonstrate that the formation temperature of the C54 TiSi2 phase from the bilayer reaction of Ti on Si is lowered by approximately 100 °C by placing an interfacial layer of Mo or W between Ti and Si. Upon annealing above 500 °C, the C49 TiSi2 phase forms first, as in the reaction of Ti directly on Si. However, the temperature range over which the C49 phase is stable is decreased by approximately 100 °C, allowing C54 TiSi2 formation below 700 °C. Patterned submicron lines (0.25−1.0 μm wide) fabricated without the Mo layer contain only the C49 TiSi2 phase after annealing to 700 °C for 30 s. With a Mo layer less than 3 nm thick between Ti and Si, however, a mixture of C49 and C54 TiSi2 was formed, resulting in a lower resistivity. The enhanced formation of the C54 TiSi2 is attributed to an increased density of nucleation sites for the C49-C54 phase transformation, arising from a finer grained precursor C49 phase.
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Cheng, S. L., J. J. Jou, L. J. Chen, and B. Y. Tsui. "Formation of C54–TiSi2 in titanium on nitrogen-ion-implanted (001)Si with a thin interposing Mo layer." Journal of Materials Research 14, no. 5 (May 1999): 2061–69. http://dx.doi.org/10.1557/jmr.1999.0278.

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Formation of TiSi2 in titanium on nitrogen-implanted (001)Si with a thin interposing Mo layer has been investigated. The presence of a Mo thin interposing layer was found to decrease the formation temperature of C54–TiSi2 by about 100 °C. A ternary (Ti, Mo)Si2 phase was found to distribute in the silicide layer. The ternary compound is conjectured to provide more heterogeneous nucleation sites to enhance the formation of C54–TiSi2. On the other hand, the effect of grain boundary for decreasing transformation temperature was found to be less crucial. For Ti/Mo bilayer on 30 keV BF2+ or As+ + 20 keV, 1 × 1015/cm2 N2+ implanted samples, a continuous C54–TiSi2 layer was found to form in all samples annealed at 650–950 °C. The presence of nitrogen atoms in TiSi2 is thought to lower the silicide/silicon interface energy and/or the silicide surface energy to maintain the integrity of the C54–TiSi2 layer at high temperatures.
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Quintero, A., M. Libera, C. Cabral, C. Lavoie, and J. M. Harper. "Templating Effects On C54-Tisi2 Formation In Ternary Reactions." Microscopy and Microanalysis 4, S2 (July 1998): 666–67. http://dx.doi.org/10.1017/s143192760002345x.

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Titanium disilicide (C54-TiSi2) is a low resistivity silicide (15 - 20 μΩ-cm) and is widely used in the device industry. It is formed at about 750-850 °C when thin layers (∽30- lOOnm) of Ti on poly- or single-crystal Si substrates are subjected to rapid thermal annealing (3 °C/sec) in a controlled atmosphere (N2). During the anneal, other Ti silicides such as Ti5Si3, Ti5Si4 ,TiSi and C49-TiSi2 may form prior to the desirable C54-TiSi2.Some attempts have been made to promote low-temperature C54-TiSi2 formation. Depositing a Mo (l-2nm) interlayer between Ti and Si has been reported to decrease the C54 formation temperature by 100 °C.2 Codepositing Ti with Ta, Nb or Mo has successfully decreased the formation temperature by about 150 °C.3 These findings have been interpreted in terms of a template mechanism which facilitates formation of C54 by advantageous lattice matching between similar planes in C54 and a hexagonal ternary (Ti- X-Si, X=Ta, Nb, Mo) C40 precursor phase.
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Zhang, Z.-B., S.-L. Zhang, D.-Z. Zhu, H.-J. Xu, and Y. Chen. "Different routes to the formation of C54 TiSi2 in the presence of surface and interface molybdenum: A transmission electron microscopy study." Journal of Materials Research 17, no. 4 (April 2002): 784–89. http://dx.doi.org/10.1557/jmr.2002.0115.

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Direct evidence revealing fundamental differences in sequence of phase formation during the growth of TiSi2 in the presence of an ultrathin surface or interface Mo layer is presented. Results of cross-sectional transmission electron microscopy showed that when the Mo layer was present at the interface between Ti films and Si substrates, C40 (Mo,Ti)Si2 formed at the interface, and Ti5Si3 grew on top after annealing at 550 °C. Additionally, both C54 and C40 TiSi2 were found in the close vicinity of the C40 (Mo,Ti)Si2 grains. No C49 grains were detected. Raising the annealing temperature to 600 °C led to the formation of C54 TiSi2 at the expense of Ti5Si3, and the interfacial C40 (Mo,Ti)Si2 also began to transform into C54 (Mo,Ti)Si2 at 600 °C. When the Mo was deposited on top of Ti, the silicide film was almost solely composed of C49 TiSi2 at 600 °C. However, a small amount of (Mo,Ti)5Si3 was still present in the vicinity of the sample surface. Upon annealing at 650 °C, only the C54 phase was found throughout the entire TiSi2 layer with a surface (Mo,Ti)Si2 on top of TiSi2. Hence, it was unambiguously shown that in the presence of surface versus interface Mo, different routes were taken to the formation of C54 TiSi2.
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Quintero, A., M. Libera, C. Cabral, C. Lavoie, and J. M. E. Harper. "Mechanisms for enhanced C54–TiSi2 formation in Ti–Ta alloy films on single-crystal Si." Journal of Materials Research 14, no. 12 (December 1999): 4690–700. http://dx.doi.org/10.1557/jmr.1999.0635.

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The mechanisms are studied for enhanced formation of C54–TiSi2 at about 700 °C when rapid thermal annealing at 3 °C/s in N2 is performed on 32-nm-thick codeposited Ti–5.9 at.% Ta on Si(100) single-crystal substrates. The enhancement is related to an increased C54–TiSi2 nucleation rate due to the development of a multilayered microstructure. The multilayer microstructure forms at temperatures below 600 °C with the formation of an amorphous disilicide adjacent to the Si substrate and a M5Si3 (M = Ti, Ta) capping layer. This amorphous disilicide crystallizes at higher temperatures to C49–TiSi2. The multilayer microstructure introduces an additional interface that increases the area available for the heterogeneous nucleation of C54. The capping layer is identified as hexagonal Ti 5Si3 or its isomorphous compound (Ti1–xTax)5Si3. Crystal simulations demonstrate that C54(040) has a lattice mismatch of 6–7% relative to Ti5Si3(300) suggesting that a pseudomorphic epitaxial relationship may lower the interfacial energy between these two phases and reduce the energy barrier for C54 nucleation. A C40 disilicide phase was also observed at temperatures above that required to form C54–TiSi2 suggesting that, in the present experiments, the C40 phase does not play a major role in catalyzing C54 formation.
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Wang, Ming-Jun, Wen-Tai Lin, and F. M. Pan. "Effects of an interposed Cu layer on the enhanced thermal stability of C49 TiSi2." Journal of Materials Research 17, no. 2 (February 2002): 343–47. http://dx.doi.org/10.1557/jmr.2002.0048.

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The effects of an interposed Cu layer and a surface Cu layer on the C49–C54 TiSi2 transformation temperature were studied. For the Ti/Cu/(100)Si samples the interposed Cu layer significantly enhanced the thermal stability of C49 TiSi2. The temperature for complete C49–C54 TiSi2 transformation was raised from 710 to 735 to 750 °C with the thickness of the interposed Cu layer increasing from 0 to 1.5 to 3.5 nm, correspondingly. Cu was insoluble in C54 TiSi2. For the Cu/Ti/(100)Si samples, the surface Cu layer did not at all enhance the thermal stability of the C49 phase. In the present study, the enhanced thermal stability of C49 TiCuxSi2–x can be attributed to its reduced electron/atom ratio and larger grain size relative to those of C49 TiSi2.
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Clevenger, L. A., R. A. Roy, C. Cabral, K. L. Saenger, S. Brauer, G. Morales, K. F. Ludwig, et al. "A comparison of C54-TiSi2 formation in blanket and submicron gate structures using in situ x-ray diffraction during rapid thermal annealing." Journal of Materials Research 10, no. 9 (September 1995): 2355–59. http://dx.doi.org/10.1557/jmr.1995.2355.

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We demonstrate the use of a synchrotron radiation source for in situ x-ray diffraction analysis during rapid thermal annealing (RTA) of 0.35 μm Salicide (self-aligned silicide) and 0.4 μm Polycide (silicided polysilicon) TiSi2 Complementary Metal Oxide Semiconductor (CMOS) gate structures. It is shown that the transformation from the C49 to C54 phase of TiSi2 occurs at higher temperatures in submicron gate structures than in unpatterned blanket films. In addition, the C54 that forms in submicron structures is (040) oriented, while the C54 that forms in unpatterned Salicide films is randomly oriented. Although the preferred oreintation of the initial C49 phase was different in the Salicide and Polycide gate structures, the final orientation of the C54 phase formed was the same. An incomplete conversion of C49 into C54-TiSi2 during the RTA of Polycide gate structures was observed and is attributed to the retarding effects of phosphorus on the transition.
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8

Rajan, Krishna. "Twin boundaries in C54-TiSi2." Metallurgical Transactions A 21, no. 9 (September 1990): 2317–22. http://dx.doi.org/10.1007/bf02646978.

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9

Pico, C. A., and M. G. Lagally. "Angular correlation between grains of metastable TiSi2." Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 888–89. http://dx.doi.org/10.1017/s0424820100106508.

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TiSi2 is the primary silicide candidate as interconnect material in very largy scale integrated (VLSI) devices because of its low resistivity (15μΩ-cm) and relatively low processing temperature. While formation of TiSi2 from Ti-on-Si reaction couples can be accomplished easily and quickly at anneal temperatures above 550°C, below ∽650°C TiSi2 forms in the metastable C49 (base-centered orthorhombic; a=3.62Å, b=13.76Å, and c=3.605Å) 12-atom-per-unit-cell crystal structure with a characteristic resistivity of 65μΩ-cm. To achieve the low-resistivity C54 (face-centered orthorhombic; a=8.24Å, b=4.78Å, and c=8.54Å) phase, anneals above ∼650°C are required. It has been suggested that the decrease in resistivity of TiSi2 from the C49 phase to the C54 phase is a result of the reduced number of microstructural defects (defect separation changes from ∼30Å to 5μm) associated with the change of crystal structure. An understanding of the arrangement of the microstructural defects in C49 is needed to correlated the electrical properties of C49 and C54 correctly.
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Nemanich, R. J., Hyeongtag Jeon, J. W. Honeycutt, C. A. Sukow, and G. A. Rozgonyi. "Interface structure of epitaxial TiSi2 on Si(lll)." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (August 1992): 1354–55. http://dx.doi.org/10.1017/s0424820100131401.

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Among the transition metal silicides, TiSi2 is considered to be a reasonable choice for VLSI applications because it exhibits low resistivity, high temperature stability and compatibility with current processing steps. Thin film reaction of Ti on Si results in the formation of two different forms of TiSi2 which have been identified as the C49 and the C54 crystal structures. The structures are base centered and face centered orthorhombic, respectively. The C49 phase is metastable (ie. it is not represented in the binary phase diagram), and forms at temperatures of 450 to 600°C. The stable C54 phase forms after high temperature annealing to > 650°C. In this paper the relation of the morphology and interface structures of epitaxial C49 TiSi2 on Si(l11) are described.The TiSi2/Si structures were prepared in a UHV system. The TiSi2 surface morphologies were examined by SEM and plan view TEM, and the interfaces were studied by TEM and HRTEM. The phase identification was obtained from the TEM and with ex situ Raman spectroscopy.
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Dissertations / Theses on the topic "C54-TiSi2"

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Esposito, Laura. "Mise en oeuvre de procédés innovants pour l'optimisation de contacts TiSi pour les technologies imageurs avancées." Electronic Thesis or Diss., Aix-Marseille, 2021. http://theses.univ-amu.fr.lama.univ-amu.fr/210319_ESPOSITO_505pj561fjb969hmp55qmrno_TH.pdf.

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Dans les dispositifs de capteurs d’image les siliciures de titane sont utilisés afin de réaliser les contacts entre les transistors et les interconnections de cuivre. Une nouvelle problématique émerge alors d’une co-intégration des contacts en siliciures de Ti et de nickel : former le siliciure de titane optimal (C54-TiSi2) a une température plus faible que la température de formation classique (800°C). Afin de réduire la température de formation du siliciure, l’influence du recuit laser nanoseconde UV (UV-NLA) sur la formation des contacts en siliciures de Ti a été étudiée. Pour cela, des dépôts consécutifs de films de Ti et de TiN avec des épaisseurs inférieures à 10 nm ont été réalisés après un traitement de surface spécifique. Des recuits par UV-NLA à différentes densités d’énergies appliquées selon différents nombres de tirs et suivis par des recuits thermiques rapides (RTA) ont été réalisés. Les différents échantillons ont été caractérisés par plusieurs méthodes dont la mesure quatre pointes, la diffraction de rayons X, et la microscopie électronique en transmission. L'utilisation du UV-NLA permet la formation d’une phase amorphe à l’état solide, puis dans le cas de l’utilisation du laser avec plusieurs tirs combinés à un RTA ultérieur, la formation de la phase C54-TiSi2 à basse température a été démontrée. Les études réalisées sur les substrats dopés et/ou polycristallins, ainsi que ceux sur plaques avec motifs photolithographiés indiquent que dans l’état actuel, l’intégration du traitement UV-NLA dans le processus d’industrialisation est plus complexe qu’escomptée. Des perspectives permettant de favoriser l’intégration de ce nouveau recuit sont également discutées
In image sensor devices, Ti silicides are used to establish contacts between transistors and copper interconnects. A new problematic emerges with the co-integration of Ti-based and Ni-based silicided contacts: the titanium silicide (C54-TiSi2) needs to be formed at a lower temperature than the conventional formation temperature (800°C). In order to reduce the temperature of silicide formation, the influence of nanosecond laser annealing on Ti silicide contact formation has been investigated in this PhD work. To do so, consecutive deposition of Ti and TiN films with thicknesses below 10 nm were carried out after a specific surface treatment. Annealing by UV nanosecond laser (UV-NLA) at different energy densities, different numbers of shots and followed by rapid thermal annealing (RTA) for various temperatures were performed. The different samples were characterized by several methods including: four-point probe measurements, X-ray diffraction, and transmission electron microscopy. The main results obtained with the use of UV-NLA are the following: it enables the formation of an amorphous phase in the solid state and the formation of the metastable C40-TiSi2 phase becomes possible by melting the first nanometers of the substrate. By combining multiple laser shots and a subsequent RTA, the formation of the C54-TiSi2 phase at low temperature of 650 °C has been demonstrated. Studies carried out on doped and/or polycrystalline substrates, as well as on wafers with nanometric patterns indicate that, in the current state, the integration of UV- NLA into the industrial process is more complex than expected. Prospects for promoting the integration of UV-NLA are also discussed
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Jou, Juann-Jann, and 周竣堅. "Enhanced Formation of C54-TiSi2 by and Interposing Mo Thin Layer between Ti and Si." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/69645195589226723108.

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碩士
國立清華大學
材料科學工程學系
85
Interfacial reactions of non-ultrahigh vacuum deposited 30-nm-thick Ti films with an interposing 0.5-nm-thick Mo layer on (001)Si and implanted Si have been studied by transmission electron microscopy (TEMP), x-ray diffractometry, energy dispersion analysis of x-ary (EDAX) and secondary ion mass spectroscopy (SIMS). X-ray diffraction (XRD) and sheet resistance data revealed that C49- to C54-TiSi2 phase transformation occurred in 650℃ annealed samples. A Ti-Mo-Si ternary silicide was found to form. In the XRD spectra of the 650℃ annealed implated samples containing Mo, a ternary phase containing Ti, Mo and Si atoms was also found. Substantial amount of C54-TiSi2 phase already forms at this temperature. Therefore, with a thin interposing Mo layer, the formation temperature of C54-TiSi2 was lowered by about 100℃ compared to the what is usually needed for the C49- to C54-TiSi2 transformation. From EDAX and SIMS data, the redistribution of Mo atoms in TiSi2 layer was found. The enhancement of the formation of C54-TiSi2 is attributed to the presence of Mo atoms which provies more heterogeneous nucleation sites needed for the transformation from C49 to C54 phase. Effects of nitrogen ion implantation on TiSi2 contacts on shallow junctions have been investigated. Nitrogen ion implantation was found to suppress the B and As diffusion in silicon. For Ti on 30 keV BR＋2 ＋ 20 keV, 1 x 1015/cm2 N＋2 implanted samples, a continuous low-resistivity TiSi2 layer was found to form in all samples annealed at 650-950℃ from TEM observations. For Ti on 20 keV, 1 x 1015/cm2 N＋2 ＋ 30 keV As＋ implanted samples, end-of-range (EOR) defects were completely climinated in all samples annealed at 650-900℃. The results indicated that with appropriate control, a thin interposing Mo layer and N＋2-implantation can be successfully implemented in forming low-resistivity TiSi2 contacts and enhancing the thermal stability of TiSi2 layer on shallow junctions in deep submicron devices. In a polycrystalline structure, grain boundary nucleation is generally the dominant mode. In the present study, the Mo atoms and/or the (Ti, Mo)Si2 ternary phase were proposed to provide more nucleation sites to enhance formation of C54-TiSi2. On the other hand, the effect of grain boundary for decreasing transformation temperature was found to be less crucial.
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Jong, Huang，Guay, and 黃貴中. "Investigations on the oxidation kinetics and thermal stability of C54-TiSi2, NiSi2 and CoSi2 on Si substrate." Thesis, 1994. http://ndltd.ncl.edu.tw/handle/32456334304539890743.

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Conference papers on the topic "C54-TiSi2"

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QUILICI, SIMONA. "MICRO - RAMAN SPECTROSCOPY APPLIED TO MICROELECTRONICS: THE PHASE TRANSITION OF TiSi2 FROM C49 TO C54." In Proceedings of the 16th Course of the International School of Solid State Physics. WORLD SCIENTIFIC, 2000. http://dx.doi.org/10.1142/9789812792136_0021.

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Okihara, M., K. Tai, M. Kageyama, Y. Harada, N. Hirashita, and H. Onoda. "Transmission Electron Microscopic Study of TiSi2 Microstructures and the C49-C54 Phase Transformation in Narrow Lines." In 1998 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1998. http://dx.doi.org/10.7567/ssdm.1998.a-7-2.

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