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Journal articles on the topic 'Broadband Photodetector'

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Author: Grafiati
Published: 10 December 2022
Last updated: 28 January 2023

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1

Zhou, Guigang, Huancheng Zhao, Xiangyang Li, Zhenhua Sun, Honglei Wu, Ling Li, Hua An, Shuangchen Ruan, and Zhengchun Peng. "Highly-Responsive Broadband Photodetector Based on Graphene-PTAA-SnS2 Hybrid." Nanomaterials 12, no. 3 (January 29, 2022): 475. http://dx.doi.org/10.3390/nano12030475.

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The development of wearable systems stimulate the exploration of flexible broadband photodetectors with high responsivity and stability. In this paper, we propose a facile liquid-exfoliating method to prepare SnS2 nanosheets with high-quality crystalline structure and optoelectronic properties. A flexible photodetector is fabricated using the SnS2 nanosheets with graphene-poly[bis(4-phenyl) (2,4,6-trimethylphenyl) amine (PTAA) hybrid structure. The liquid-exfoliated SnS2 nanosheets enable the photodetection from ultraviolet to near infrared with high responsivity and detectivity. The flexible broadband photodetector demonstrates a maximum responsivity of 1 × 105 A/W, 3.9 × 104 A/W, 8.6 × 102 A/W and 18.4 A/W under 360 nm, 405 nm, 532 nm, and 785 nm illuminations, with specific detectivity up to ~1012 Jones, ~1011 Jones, ~109 Jones, and ~108 Jones, respectively. Furthermore, the flexible photodetector exhibits nearly invariable performance over 3000 bending cycles, rendering great potentials for wearable applications.
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2

You, Jie, Yichi Zhang, Maolong Yang, Bo Wang, Huiyong Hu, Zimu Wang, Jinze Li, Hao Sun, and Liming Wang. "Ultraviolet-Visible-Near Infrared Broadband Photodetector Based on Electronspun Disorder ZnO Nanowires/Ge Quantum Dots Hybrid Structure." Crystals 12, no. 2 (January 25, 2022): 172. http://dx.doi.org/10.3390/cryst12020172.

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Ultraviolet-visible-near infrared broadband photodetectors have significant prospects in many fields such as image sensing, communication, chemical sensing, and day and nighttime surveillance. Hybrid one-dimensional (1D) and zero-dimensional (0D) materials are attractive for broadband-responsive photodetectors since its unique charges transfer characteristics and facile fabrication processes. Herein, a Si/ZnO nanowires/Ge quantum dots photodetector has been constructed via processes that combined electrospinning and spin-coating methods. A broadband response behavior from ultraviolet to near-infrared (from 250 to 1550 nm) is observed. The responsivity of the hybrid structure increases around three times from 550 to 1100 nm compared with the pure Si photodetector. Moreover, when the photodetector is illuminated by a light source exceeding 1100 nm, such as 1310 and 1550 nm, there is also a significant photoresponse. Additionally, the ZnO NWs/Ge quantum dots heterostructure is expected to be used in flexible substrates, which benefits from electrospinning and spin-coating processes. The strategy that combines 1D ZnO NWs and 0D solution-processed Ge QDs nanostructures may open a new avenue for flexible and broadband photodetector.
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3

Li, Xiangyang, Shuangchen Ruan, and Haiou Zhu. "SnS Nanoflakes/Graphene Hybrid: Towards Broadband Spectral Response and Fast Photoresponse." Nanomaterials 12, no. 16 (August 13, 2022): 2777. http://dx.doi.org/10.3390/nano12162777.

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High responsivity has been recently achieved in a graphene-based hybrid photogating mechanism photodetector using two-dimensional (2D) semiconductor nanosheets or quantum dots (QDs) sensitizers. However, there is a major challenge of obtaining photodetectors of fast photoresponse time and broad spectral photoresponse at room temperature due to the high trap density generated at the interface of nanostructure/graphene or the large band gap of QDs. The van der Waals interfacial coupling in small bandgap 2D/graphene heterostructures has enabled broadband photodetection. However, most of the photocarriers in the hybrid structure originate from the photoconductive effect, and it is still a challenge to achieve fast photodetection. Here, we directly grow SnS nanoflakes on graphene by the physical vapor deposition (PVD) method, which can avoid contamination between SnS absorbing layer and graphene and also ensures the high quality and low trap density of SnS. The results demonstrate the extended broad-spectrum photoresponse of the photodetector over a wide spectral range from 375 nm to 1550 nm. The broadband photodetecting mechanisms based on a photogating effect induced by the transferring of photo-induced carrier and photo-hot carrier are discussed in detail. More interestingly, the device also exhibits a large photoresponsivity of 41.3 AW−1 and a fast response time of around 19 ms at 1550 nm. This study reveals strategies for broadband response and sensitive photodetectors with SnS nanoflakes/graphene.
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Wang, Jiaying, Yisong Zhu, Wenhao Wang, Yunze Li, Rui Gao, Peng Yu, Hongxing Xu, and Zhiming Wang. "Broadband Tamm plasmon-enhanced planar hot-electron photodetector." Nanoscale 12, no. 47 (2020): 23945–52. http://dx.doi.org/10.1039/d0nr06294d.

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5

Lu, Yueheng, Xiao Sun, Huabin Zhou, Haojie Lai, Ran Liu, Pengyi Liu, Yang Zhou, and Weiguang Xie. "A high-performance and broadband two-dimensional perovskite-based photodetector via van der Waals integration." Applied Physics Letters 121, no. 16 (October 17, 2022): 161104. http://dx.doi.org/10.1063/5.0116505.

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Van der Waals (vdW) integration of two-dimensional (2D) nanosheets provides the possibility to design optoelectronic devices with extended functionality in a controllable manner. Here, by leveraging the appropriate energy band alignment and the high-efficiency charge transfer at the junction, we construct the MoS2/graphene/2D-perovskite vdW heterostructure, which realizes the highly sensitive and broadband photodetection. Particularly, at the near-infrared (NIR) wavelength (λ = 1550 nm), the heterostructure photodetector shows a balanced trade-off between the high responsivity (>3000 A/W) and fast response time (<1 ms), outperforming the previously reported NIR photodetectors based on all-inorganic vdW heterostructures. Our work not only extends the response wavelength of the 2D hybrid perovskite-based photodetector to the NIR range, but also offers additional insight into optoelectronic devices via vdW integration engineering.
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6

Zhang, Xinlei, Yuanfang Yu, Yueying Cui, Fang Yang, Wenhui Wang, Lin Liu, Junpeng Lu, and Zhenhua Ni. "High-performance broadband WO3−x/Bi2O2Se photodetectors based on plasmon-induced hot-electron injection." Applied Physics Letters 121, no. 6 (August 8, 2022): 061103. http://dx.doi.org/10.1063/5.0106392.

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Two-dimensional (2D) Bi2O2Se has emerged as a promising candidate for broadband photodetection, owing to its superior carrier mobility, outstanding air-stability, and suitable bandgap. However, Bi2O2Se photodetectors suffer limited sensitivity at a near-infrared region due to the relatively weak light absorption at this band. Here, it is demonstrated that coupling with plasmonic nanostructures can effectively improve the performance of Bi2O2Se photodetectors at a broad spectral range of 532–1550 nm. By virtue of plasmon-induced hot-electron injection and the improved light absorption, the WO3 −x/Bi2O2Se hybrid photodetector exhibits a high responsivity of ∼1.7 × 106 A/W at 700 nm, and ∼48 A/W at a communication O-band of 1310 nm, which is nearly one order of magnitude higher than that of an intrinsic Bi2O2Se device. Moreover, profited by ultrafast hot electron transfer and the avoided defect trapping, the device maintains a high-speed photoresponse (rise time ∼326 ns, decay time ∼47 μs). Our results show that 2D materials coupled with plasmonic nanostructures is a promising architecture for developing state-of-the-art broadband photodetection.
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7

Yang, Jiawei, Yudong Liu, Haina Ci, Feng Zhang, Jianbo Yin, Baolu Guan, Hailin Peng, and Zhongfan Liu. "High-Performance 3D Vertically Oriented Graphene Photodetector Using a Floating Indium Tin Oxide Channel." Sensors 22, no. 3 (January 26, 2022): 959. http://dx.doi.org/10.3390/s22030959.

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Vertically oriented graphene (VG), owing to its sharp edges, non-stacking morphology, and high surface-to-volume ratio structure, is promising as a consummate material for the application of photoelectric detection. However, owing to high defect and fast photocarrier recombination, VG-absorption-based detectors inherently suffer from poor responsivity, severely limiting their viability for light detection. Herein, we report a high-performance photodetector based on a VG/indium tin oxide (ITO) composite structure, where the VG layer serves as the light absorption layer while ITO works as the carrier conduction channel, thus achieving the broadband and high response nature of a photodetector. Under the illumination of infrared light, photoinduced carriers generated in VG could transfer to the floating ITO layer, which makes them separate and diffuse to electrodes quickly, finally realizing large photocurrent detectivity. This kind of composite structure photodetector possesses a room temperature photoresponsivity as high as ~0.7 A/W at a wavelength of 980 nm, and it still maintains an acceptable performance at temperatures as low as 87 K. In addition, a response time of 5.8 s is observed, ~10 s faster than VG photodetectors. Owing to the unique three-dimensional morphology structure of the as-prepared VG, the photoresponsivity of the VG/ITO composite photodetector also presented selectivity of incidence angles. These findings demonstrate that our novel composite structure VG device is attractive and promising in highly sensitive, fast, and broadband photodetection technology.
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8

Lin, Zhitao, Wenbiao Zhu, Yonghong Zeng, Yiqing Shu, Haiguo Hu, Weicheng Chen, and Jianqing Li. "Enhanced Photodetection Range from Visible to Shortwave Infrared Light by ReSe2/MoTe2 van der Waals Heterostructure." Nanomaterials 12, no. 15 (August 3, 2022): 2664. http://dx.doi.org/10.3390/nano12152664.

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Type II vertical heterojunction is a good solution for long-wavelength light detection. Here, we report a rhenium selenide/molybdenum telluride (n-ReSe2/p-MoTe2) photodetector for high-performance photodetection in the broadband spectral range of 405–2000 nm. Due to the low Schottky barrier contact of the ReSe2/MoTe2 heterojunction, the rectification ratio (RR) of ~102 at ±5 V is realized. Besides, the photodetector can obtain maximum responsivity (R = 1.05 A/W) and specific detectivity (D* = 6.66 × 1011 Jones) under the illumination of 655 nm incident light. When the incident wavelength is 1550–2000 nm, a photocurrent is generated due to the interlayer transition of carriers. This compact system can provide an opportunity to realize broadband infrared photodetection.
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9

Li, Haixia, Bingyi Liu, Weiwei Lin, Yang Liu, Yu Wang, Zhongyuan Zhang, Lun Xiong, and Jiayou Tao. "Enhancing Performance of Broadband Photodetectors Based on Perovskite CsPbBr3 Nanocrystals/ZnO-Microwires Heterostructures." Science of Advanced Materials 13, no. 9 (September 1, 2021): 1748–55. http://dx.doi.org/10.1166/sam.2021.4072.

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A broadband photodetector response in the ultraviolet (UV)-to-green range (up to 530 nm) based on perovskite CsPbBr3 nanocrystals (NCs)/ZnO-microwires (MWs) heterostructures was realized via a convenient spin-coating method. Under UV light (365 nm) illumination, compared with a bare-ZnO-MW-based photodetector, the CsPbBr3-NCs/ZnO-MWs-heterostructure-based photodetector exhibited a faster photoresponse (<0.1 s) and higher current responsivity (93.50 AW−1), external quantum efficiency (3399%), and detectivity (4.4 × 1010). In addition, the photodetector based on CsPbBr3-NCs/ZnO-MWs heterostructures also exhibited a very fast photoresponse to green light (530 nm). These can be ascribed to the strong light-trapping ability of CsPbBr3 NCs and high charge-transfer efficiency at the CsPbBr3-NCs/ZnO-MWs-heterojunction interface due to the built-in field, which facilitates the spatial separation of the photogenerated carriers. Therefore, this work will develop perovskite/ZnO nanomaterials as promising building blocks for broadband photodetectors and wider optoelectronic applications.
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10

Tsai, Shang Yu, Ching-Chang Lin, Cheng-Tang Yu, Yen-Shuo Chen, Wei-Lin Wu, Yu-Cheng Chang, Chun Chi Chen, and Fu-Hsiang Ko. "Screen-Printable Silver Paste Material for Semitransparent and Flexible Metal–Semiconductor–Metal Photodetectors with Liquid-Phase Procedure." Nanomaterials 12, no. 14 (July 15, 2022): 2428. http://dx.doi.org/10.3390/nano12142428.

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Photodetectors are widely applied in modern industrial fields because they convert light energy into electrical signals. We propose a printable silver (Ag) paste electrode for a highly flexible metal–semiconductor–metal (MSM) broadband visible light photodetector as a wearable and portable device. Single-crystal and surface-textured silicon substrates with thicknesses of 37.21 μm were fabricated using a wet etching process. Surface texturization on flexible Si substrates enhances the light-trapping effect and minimizes reflectance from the incident light, and the average reflectance is reduced by 16.3% with pyramid-like structures. In this study, semitransparent, conductive Ag paste electrodes were manufactured using a screen-printing with liquid-phase process to form a flexible MSM broadband visible light photodetector. The transmittance of the homemade Ag paste solution fell between 34.83% and 36.98% in the wavelength range of visible light, from 400 nm to 800 nm. The highest visible light photosensitivity was 1.75 × 104 at 19.5 W/m2. The photocurrents of the flexible MSM broadband visible light photodetector were slightly changed under concave and convex conditions, displaying stable and durable bending properties.
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11

Chen, Ping, Lejing Pi, Zexin Li, Haoyun Wang, Xiang Xu, Dongyan Li, Xing Zhou, and Tianyou Zhai. "GeSe/MoTe2 vdW heterostructure for UV–VIS–NIR photodetector with fast response." Applied Physics Letters 121, no. 2 (July 11, 2022): 021103. http://dx.doi.org/10.1063/5.0090426.

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GeSe is a layered p-type semiconductor with intriguing optoelectrical properties such as high absorption coefficient, high carrier mobility, and narrow bandgap, which promises a broadband photoresponse over a wide spectral range. However, GeSe based broadband photodetectors could not achieve both high responsivity and fast response speed. Therefore, it is urgent to improve the properties of GeSe based broadband photodetectors. Herein, a GeSe/MoTe2 van der Waals (vdW) heterostructure was designed. The GeSe/MoTe2 vdW heterostructure possesses broadband photodetection over ultraviolet, visible, and near infrared. The device has competitive responsivity (R) and detectivity (D*) over a broadband even at 1050 nm, which are 28.4 A/W and 5.6 × 109 Jones, respectively. Excitingly, the response speed for 365 nm is as fast as 3 μs, which is much faster than most other GeSe devices. Overall, our results suggest that the GeSe/MoTe2 heterostructure can provide an effective strategy to achieve broadband photodetectors with both high responsivity and fast response.
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12

Voshell, Andrew, Mauricio Terrones, and Mukti Rana. "Thermal and Photo Sensing Capabilities of Mono- and Few-Layer Thick Transition Metal Dichalcogenides." Micromachines 11, no. 7 (July 17, 2020): 693. http://dx.doi.org/10.3390/mi11070693.

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Two-dimensional (2D) materials have shown promise in various optical and electrical applications. Among these materials, semiconducting transition metal dichalcogenides (TMDs) have been heavily studied recently for their photodetection and thermoelectric properties. The recent progress in fabrication, defect engineering, doping, and heterostructure design has shown vast improvements in response time and sensitivity, which can be applied to both contact-based (thermocouple), and non-contact (photodetector) thermal sensing applications. These improvements have allowed the possibility of cost-effective and tunable thermal sensors for novel applications, such as broadband photodetectors, ultrafast detectors, and high thermoelectric figures of merit. In this review, we summarize the properties arisen in works that focus on the respective qualities of TMD-based photodetectors and thermocouples, with a focus on their optical, electrical, and thermoelectric capabilities for using them in sensing and detection.
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13

Zeng, Zhi, Dongbo Wang, Jinzhong Wang, Shujie Jiao, Donghao Liu, Bingke Zhang, Chenchen Zhao, et al. "Broadband Detection Based on 2D Bi2Se3/ZnO Nanowire Heterojunction." Crystals 11, no. 2 (February 8, 2021): 169. http://dx.doi.org/10.3390/cryst11020169.

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The investigation of photodetectors with broadband response and high responsivity is essential. Zinc Oxide (ZnO) nanowire has the potential of application in photodetectors, owing to the great optoelectrical property and good stability in the atmosphere. However, due to a large number of nonradiative centers at interface and the capture of surface state electrons, the photocurrent of ZnO based photodetectors is still low. In this work, 2D Bi2Se3/ZnO NWAs heterojunction with type-I band alignment is established. This heterojunction device shows not only an enhanced photoresponsivity of 0.15 A/W at 377 nm three times of the bare ZnO nanowire (0.046 A/W), but also a broadband photoresponse from UV to near infrared region has been achieved. These results indicate that the Bi2Se3/ZnO NWAs type-I heterojunction is an ideal photodetector in broadband detection.
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14

Zhao, Jijie, Huan Liu, Lier Deng, Minyu Bai, Fei Xie, Shuai Wen, and Weiguo Liu. "High Quantum Efficiency and Broadband Photodetector Based on Graphene/Silicon Nanometer Truncated Cone Arrays." Sensors 21, no. 18 (September 13, 2021): 6146. http://dx.doi.org/10.3390/s21186146.

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Light loss is one of the main factors affecting the quantum efficiency of photodetectors. Many researchers have attempted to use various methods to improve the quantum efficiency of silicon-based photodetectors. Herein, we designed highly anti-reflective silicon nanometer truncated cone arrays (Si NTCAs) as a light-trapping layer in combination with graphene to construct a high-performance graphene/Si NTCAs photodetector. This heterojunction structure overcomes the weak light absorption and severe surface recombination in traditional silicon-based photodetectors. At the same time, graphene can be used both as a broad-spectrum absorption layer and as a transparent electrode to improve the response speed of heterojunction devices. Due to these two mechanisms, this photodetector had a high quantum efficiency of 97% at a wavelength of 780 nm and a short rise/fall time of 60/105µs. This device design promotes the development of silicon-based photodetectors and provides new possibilities for integrated photoelectric systems.
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15

Guo, Xiaofei, Liwen Zhang, Jun Chen, Xiaohong Zheng, and Lei Zhang. "Gate tunable self-powered few-layer black phosphorus broadband photodetector." Physical Chemistry Chemical Physics 23, no. 1 (2021): 399–404. http://dx.doi.org/10.1039/d0cp05292b.

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Due to the giant Stark effect in few-layer black phosphorus (BP), a self-powered and gate-controlled pure few-layer BP based photodetector device is proposed, which can cover the photodetection range from mid-infrared range (MIR) to far-infrared range (FIR).
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16

Li, Haixia, Weiwei Lin, Liang Ma, Yang Liu, Yu Wang, Ao Li, Xiaorui Jin, and Lun Xiong. "High-performance broadband photodetectors based on all-inorganic perovskite CsPb(Br/I)3 nanocrystal/CdS-microwire heterostructures." RSC Advances 11, no. 19 (2021): 11663–71. http://dx.doi.org/10.1039/d1ra00890k.

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The high performance photodetector based on CsPb(Br/I)3-NC/CdS-MW heterostructures showed broadband photodetection that covers UV-VIS-NIR range due to the charge transfer at the heterojunction interface and the absorption capability of CsPb(Br/I)3.
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17

Jimenéz-Vivanco, María R., Godofredo García, Jesús Carrillo, Francisco Morales-Morales, Antonio Coyopol, Miguel Gracia, Rafael Doti, Jocelyn Faubert, and J. Eduardo Lugo. "Porous Si-SiO2 UV Microcavities to Modulate the Responsivity of a Broadband Photodetector." Nanomaterials 10, no. 2 (January 28, 2020): 222. http://dx.doi.org/10.3390/nano10020222.

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Porous Si-SiO2 UV microcavities are used to modulate a broad responsivity photodetector (GVGR-T10GD) with a detection range from 300 to 510 nm. The UV microcavity filters modified the responsivity at short wavelengths, while in the visible range the filters only attenuated the responsivity. All microcavities had a localized mode close to 360 nm in the UV-A range, and this meant that porous Si-SiO2 filters cut off the photodetection range of the photodetector from 300 to 350 nm, where microcavities showed low transmission. In the short-wavelength range, the photons were absorbed and did not contribute to the photocurrent. Therefore, the density of recombination centers was very high, and the photodetector sensitivity with a filter was lower than the photodetector without a filter. The maximum transmission measured at the localized mode (between 356 and 364 nm) was dominant in the UV-A range and enabled the flow of high energy photons. Moreover, the filters favored light transmission with a wavelength from 390 nm to 510 nm, where photons contributed to the photocurrent. Our filters made the photodetector more selective inside the specific UV range of wavelengths. This was a novel result to the best of our knowledge.
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18

Du, Sichao, Wei Lu, Ayaz Ali, Pei Zhao, Khurram Shehzad, Hongwei Guo, Lingling Ma, et al. "A Broadband Fluorographene Photodetector." Advanced Materials 29, no. 22 (April 4, 2017): 1700463. http://dx.doi.org/10.1002/adma.201700463.

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19

Yu, Lijing, Pin Tian, Libin Tang, Qun Hao, Kar Seng Teng, Hefu Zhong, Biao Yue, Haipeng Wang, and Shunying Yan. "Fast-Response Photodetector Based on Hybrid Bi2Te3/PbS Colloidal Quantum Dots." Nanomaterials 12, no. 18 (September 16, 2022): 3212. http://dx.doi.org/10.3390/nano12183212.

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Colloidal quantum dots (CQDs) as photodetector materials have attracted much attention in recent years due to their tunable energy bands, low cost, and solution processability. However, their intrinsically low carrier mobility and three-dimensional (3D) confinement of charges are unsuitable for use in fast-response and highly sensitive photodetectors, hence greatly restricting their application in many fields. Currently, 3D topological insulators, such as bismuth telluride (Bi2Te3), have been employed in high-speed broadband photodetectors due to their narrow bulk bandgap, high carrier mobility, and strong light absorption. In this work, the advantages of topological insulators and CQDs were realized by developing a hybrid Bi2Te3/PbS CQDs photodetector that exhibited a maximum responsivity and detectivity of 18 A/W and 2.1 × 1011 Jones, respectively, with a rise time of 128 μs at 660 nm light illumination. The results indicate that such a photodetector has potential application in the field of fast-response and large-scale integrated optoelectronic devices.
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He, Ziyang, Huan Liu, Fei Xie, Mingyu Bai, Shuai Wen, Jijie Zhao, and Weiguo Liu. "Lead Selenium Colloidal Quantum Dots for 400-2600 nm Broadband Photodetectors." Journal of Nanomaterials 2022 (February 4, 2022): 1–8. http://dx.doi.org/10.1155/2022/2940382.

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By the photodetector manufactured using traditional semiconductor materials, such as HgCdTe and InGaAs, it is difficult to broaden the application range of such photodetectors due to their high cost and complex manufacturing process. PbSe colloidal quantum dots (CQDs) have the potential to shift the working range of photodetector from visible to infrared wavelength region, and it also has high photoresponsivity. Herein, we report the characterization of PbSe CQDs synthesized using a facile solution process, as well as the relationship between the size of nanocrystal and the reaction temperature. The films of PbSe CQDs are deposited using the layer-by-layer (LbL) spin-coating method, which is then used to fabricate the photoconductive device. The fabricated device is found to have an efficient response in a broad spectrum range of 400-2600 nm. The device maintains good responsivity of ~320 mA/W at room temperature. Its external quantum efficiency was quite high in the shorter wavelength infrared region, and it has approximately 14% external quantum efficiency (EQE) at 2520 nm. The device demonstrated excellent performance, confirming that PbSe colloidal quantum dots is a promising material for future broadband spectrum photodetectors.
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Ding, Yunhong, Zhao Cheng, Xiaolong Zhu, Kresten Yvind, Jianji Dong, Michael Galili, Hao Hu, N. Asger Mortensen, Sanshui Xiao, and Leif Katsuo Oxenløwe. "Ultra-compact integrated graphene plasmonic photodetector with bandwidth above 110 GHz." Nanophotonics 9, no. 2 (February 25, 2020): 317–25. http://dx.doi.org/10.1515/nanoph-2019-0167.

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AbstractGraphene-based photodetectors, taking advantage of the high carrier mobility and broadband absorption in graphene, have recently seen rapid development. However, their performance with respect to responsivity and bandwidth is still limited by the weak light-graphene interaction and large resistance-capacitance product. Here, we demonstrate a waveguide-coupled integrated graphene plasmonic photodetector on a silicon-on-insulator platform. Benefiting from plasmon-enhanced graphene-light interaction and subwavelength confinement of the optical energy, a small-footprint graphene-plasmonic photodetector is achieved working at the telecommunication window, with a large a bandwidth beyond 110 GHz and a high intrinsic responsivity of 360 mA/W. Attributed to the unique electronic band structure of graphene and its ultra-broadband absorption, operational wavelength range extending beyond mid-infrared, and possibly further, can be anticipated. Our results show that the combination of graphene with plasmonic devices has great potential to realize ultra-compact, high-speed optoelectronic devices for graphene-based optical interconnects.
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22

Dong, Qingsong, Fang Wang, Xin Hu, Yuan Lu, Dongxu Zhao, Min Zhang, Tao Han, et al. "High-performance broadband photodetector based on PdSe2/black phosphorus heterodiode." Applied Physics Letters 120, no. 23 (June 6, 2022): 231103. http://dx.doi.org/10.1063/5.0097044.

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Uncooled long-wavelength infrared photodetectors based on two-dimensional materials have wide applications, such as remote sensing, missile guide, imaging, and night vision. However, realizing high-performance photodetectors based on 2D materials with high photoresponsivity and fast response speed is still a challenge. Here, we report an ultra-broadband photodetector based on the PdSe2/BP van der Waals heterodiode with a fast response speed. The detection range of the PdSe2/BP heterodiode is covered from visible to long-wave infrared (0.4–10.6 μm). A high photoresponsivity of 116.0 A/W and a low noise equivalence power of 8.4 × 10−16 W/Hz1/2 and D* of 2.05 × 109 cm Hz1/2/W were demonstrated. Notably, the heterodiode exhibits a very fast response speed with τr = 2.9 and τd = 4.0 μs. Our results introduced a promising application in broadband and fast photoresponse at weak light intensity.
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Zha, Yanfang, Yun Wang, Yuhang Sheng, Xiaowei Zhang, Xinyue Shen, Fangjian Xing, Cihui Liu, Yunsong Di, Yingchun Cheng, and Zhixing Gan. "Stable and broadband photodetectors based on 3D/2D perovskite heterostructures with surface passivation." Applied Physics Letters 121, no. 19 (November 7, 2022): 191904. http://dx.doi.org/10.1063/5.0122091.

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Despite increasing research interest in two-dimensional (2D) perovskites, the stability and spectral response range of the photodetectors based on 2D perovskites are yet far from satisfactory. In this work, a semiconductor heterojunction is constructed based on dimethyl itaconate (DI) treated (BA)2PbI4 microplates and CsPb(Brx/I1−x)3 nanocrystals. The DI treatment not only passivates the defects but also blocks the moisture, resulting in improved stability and suppressed defect trapping. Meanwhile, the type-II heterojunctions facilitate the separation of electron–hole pairs. As a result, the photodetector based on the DI-(BA)2PbI4/CsPb(Brx/I1−x)3 exhibits a responsivity up to 209 nA/mW and a detectivity up to 5.9 × 108 Jones with a broad spectral response range of 400–600 nm. Furthermore, after storage in the ambient environment for 10 days, the responsivity retains about 70%, which is significantly ameliorated compared to the photodetector based on bare (BA)2PbI4 (drops more than 90%). Therefore, this work demonstrates that surface passivation and 2D/three-dimensional heterojunctions are promising strategies to improve responsivity, broaden spectral response range, and enhance stability of photodetectors based on 2D perovskites.
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Lin, Wei-Hsun, Chi-Che Tseng, Kuang-Ping Chao, Shu-Yen Kung, Shih-Yen Lin, and Meng-Chyi Wu. "Broadband Quantum-Dot Infrared Photodetector." IEEE Photonics Technology Letters 22, no. 13 (July 2010): 963–65. http://dx.doi.org/10.1109/lpt.2010.2048425.

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Du, Bowen, Wenqiang Yang, Qiao Jiang, Hangyong Shan, Deying Luo, Bowen Li, Weichen Tang, et al. "Plasmonic-Functionalized Broadband Perovskite Photodetector." Advanced Optical Materials 6, no. 8 (February 14, 2018): 1701271. http://dx.doi.org/10.1002/adom.201701271.

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Wang, Xuan, Yehua Tang, Wanping Wang, Hao Zhao, Yanling Song, Chaoyang Kang, and Kefan Wang. "Fabrication and Characterization of a Self-Powered n-Bi2Se3/p-Si Nanowire Bulk Heterojunction Broadband Photodetector." Nanomaterials 12, no. 11 (May 26, 2022): 1824. http://dx.doi.org/10.3390/nano12111824.

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In the present study, vacuum evaporation method is used to deposit Bi2Se3 film onto Si nanowires (NWs) to form bulk heterojunction for the first time. Its photodetector is self-powered, its detection wavelength ranges from 390 nm to 1700 nm and its responsivity reaches its highest value of 84.3 mA/W at 390 nm. In comparison to other Bi2Se3/Si photodetectors previously reported, its infrared detection length is the second longest and its response speed is the third fastest. Before the fabrication of the photodetector, we optimized the growth parameter of the Bi2Se3 film and the best Bi2Se3 film with atomic steps could finally be achieved. The electrical property measurement conducted by the physical property measurement system (PPMS) showed that the grown Bi2Se3 film was n-type conductive and had unique topological insulator properties, such as a metallic state, weak anti-localization (WAL) and linear magnetic resistance (LMR). Subsequently, we fabricated Si NWs by the metal-assisted chemical etching (MACE) method. The interspace between Si NWs and the height of Si NWs could be tuned by Ag deposition and chemical etching times, respectively. Finally, Si NWs fabricated with the Ag deposition time of 60 s and the etching time of 10 min was covered by the best Bi2Se3 film to be processed for the photodetector. The primary n-Bi2Se3/p-Si NWs photodetector that we fabricated can work in a self-powered mode and it has a broadband detection range and fast response speed, which indicates that it can serve as a promising silicon-based near- and mid-infrared photodetector.
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Yin, Shiqi, Bingtian Zhao, Jiajie Wan, Siliang Wang, Jiyong Yang, Xi Wang, Longhui Zeng, et al. "MXene-contact enhanced broadband photodetection in centimeter level GeS films." Journal of Physics D: Applied Physics 55, no. 26 (April 13, 2022): 265105. http://dx.doi.org/10.1088/1361-6463/ac629e.

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Abstract The persistent pursuit of broadband photodetectors derives from their unique properties for promising applications such as optoelectronic devices, imaging sensors, and neuromorphic computing. Here, we fabricated high-performance, ultra-wide spectral response (250–1064 nm) and easy-processing spin-deposition photodetector based on amorphous germanium sulfide (a-GeS) films by using Ti3C2T x transparent electrodes as contacts. In addition, photodetectors based MXenes contacts have larger photocurrent compared with Au contacts because MXenes conductive films have larger photo-responsive active areas and the surface plasmon-assisted hot carriers generated by the laser irradiation on MXenes. As-prepared photodetectors based on MXenes electrodes exhibit a photo-to-dark current ratio of up to 3.91 × 102 under a bias of 8 V, coupled with the response speed of 59 ms, photoresponsivity (166 mA W−1) and high detectivity (4.41 × 1010 Jones). This work combining amorphous materials with highly conductive MXene film has excellent application prospects for ultra-wide spectral response optoelectronic devices.
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Wadhwa, Riya, Abhay V. Agrawal, and Mukesh Kumar. "A strategic review of recent progress, prospects and challenges of MoS2-based photodetectors." Journal of Physics D: Applied Physics 55, no. 6 (October 22, 2021): 063002. http://dx.doi.org/10.1088/1361-6463/ac2d60.

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Abstract Two-dimensional layered materials have emerged prominently in the past decade, largely being investigated fundamentally and practically. Their unique layered structure and atomic-scale thickness make them attractive with exclusive electrical and optical properties compared to their bulk counterparts. Molybdenum disulfide (MoS2) is the most widely studied material in the family of transition metal dichalcogenides. The direct and variable bandgap, high carrier mobility, thermal and chemical stability makes it an attractive choice for next-generation photodetector applications. MoS2 heterojunction-based photodetectors offer ultrafast charge transfer and broadband photoresponse, adding more functionality beyond their individual counterparts. Enormous efforts have been devoted to adopting a new strategy that can improve photodetector performance in terms of responsivity and response time. This review briefly discusses the photo-induced current mechanism and performance parameters along with some important aspects to realize better device performance. Here, we critically review the current status and progress made towards MoS2-based photodetectors, followed by a discussion on open challenges and opportunities in their future application.
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Zeng, Chun Hong, Yong Jian Ma, Bao Shun Zhang, Ya Meng Xu, and Mei Kong. "Broadband Ultraviolet Photodetector Based on Graphene/β-Ga2O3/GaN Heterojunction." Materials Science Forum 1014 (November 2020): 131–36. http://dx.doi.org/10.4028/www.scientific.net/msf.1014.131.

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Broadband ultraviolet (BUV) photodetectors are widely used in military and civil fields. A high performance BUV photodetector based on graphene/β-Ga2O3/GaN heterojunction is proposed and realized by semiconductor micro-fabrication techniques in this paper. The β-Ga2O3 and GaN films are grown by metal organic chemical vapor deposition (MOCVD), and the graphene is also used as a transparent electrode. The device exhibits a broad response band from 230 nm to 368 nm with responsivity exceeding 0.4A/W at -5 V bias voltage and a peak responsivity of 0.53 A/W at 256 nm. These performances can be attributed to the internal gain mechanism of graphene/β-Ga2O3/GaN heterojunction and the optical properties of graphene. Our work provides an efficient method to realize a high-performance BUV photodetector for photoelectric applications.
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Park, Do-Hyun, and Hyo Chan Lee. "Photogating Effect of Atomically Thin Graphene/MoS2/MoTe2 van der Waals Heterostructures." Micromachines 14, no. 1 (January 4, 2023): 140. http://dx.doi.org/10.3390/mi14010140.

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The development of short-wave infrared photodetectors based on various two-dimensional (2D) materials has recently attracted attention because of the ability of these devices to operate at room temperature. Although van der Waals heterostructures of 2D materials with type-II band alignment have significant potential for use in short-wave infrared photodetectors, there is a need to develop photodetectors with high photoresponsivity. In this study, we investigated the photogating of graphene using a monolayer-MoS2/monolayer-MoTe2 van der Waals heterostructure. By stacking MoS2/MoTe2 on graphene, we fabricated a broadband photodetector that exhibited a high photoresponsivity (>100 mA/W) and a low dark current (60 nA) over a wide wavelength range (488–1550 nm).
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Zhang, Fen, Zhangxun Mo, Danyang Wang, Baocheng Cui, Qinglin Xia, Bo Li, Jun He, and Mianzeng Zhong. "Ultrasensitive and broad-spectrum polarization sensitive photodetector based on individual Bi2Te0.6S2.4 nanobelt." Applied Physics Letters 121, no. 19 (November 7, 2022): 191102. http://dx.doi.org/10.1063/5.0117128.

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Polarimetric photodetectors with broadband and fast response have important applications in the military and civilian fields. Alloying of semiconductors is a good strategy to regulate its electronic band structure which broadens the photoresponse range of the corresponding optoelectronic devices. In this work, we designed and grew the high-quality Bi2Te0.6S2.4 alloy via controllable chemical vapor transport. The as-prepared Bi2Te0.6S2.4 nanobelts were designed to work as the active layer in photodetectors. The individual Bi2Te0.6S2.4 nanobelt based photodetector exhibits excellent photoresponse properties in a broadband range from solar-blind ultraviolet-C (254 nm) to near-infrared (1064 nm) with a good responsivity of 340 mA/W, a specific detectivity of 2.3 × 109 Jones, and extremely low dark current (1.1 pA). The photodetectors also exhibit a fast response speed of about 1 μs which comes from the direct transition of carriers in Bi2Te0.6S2.4 confirmed by the Ohmic contact between Bi2Te0.6S2.4 and electrodes. Furthermore, it is worth noting that the Bi2Te0.6S2.4 nanobelts have high polarization sensitivity in the broadband ranges from 266 to 1064 nm with the maximum dichroic ratio of 2.94 at 808 nm. Our results provide a simple Bi based semiconductor system for high performance multifunctional optoelectronics and electronics compared with conventional Bi based chalcogenides.
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Zhu, Wenguo, Songqing Yang, Huadan Zheng, Yuansong Zhan, Dongquan Li, Guobiao Cen, Jieyuan Tang, et al. "Gold Enhanced Graphene-Based Photodetector on Optical Fiber with Ultrasensitivity over Near-Infrared Bands." Nanomaterials 12, no. 1 (December 30, 2021): 124. http://dx.doi.org/10.3390/nano12010124.

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Graphene has been widely used in photodetectors; however its photoresponsivity is limited due to the intrinsic low absorption of graphene. To enhance the graphene absorption, a waveguide structure with an extended interaction length and plasmonic resonance with light field enhancement are often employed. However, the operation bandwidth is narrowed when this happens. Here, a novel graphene-based all-fiber photodetector (AFPD) was demonstrated with ultrahigh responsivity over a full near-infrared band. The AFPD benefits from the gold-enhanced absorption when an interdigitated Au electrode is fabricated onto a Graphene-PMMA film covered over a side-polished fiber (SFP). Interestingly, the AFPD shows a photoresponsivity of >1 × 104 A/W and an external quantum efficiency of >4.6 × 106% over a broadband region of 980–1620 nm. The proposed device provides a simple, low-cost, efficient, and robust way to detect optical fiber signals with intriguing capabilities in terms of distributed photodetection and on-line power monitoring, which is highly desirable for a fiber-optic communication system.
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Moein, Tania, Darius Gailevičius, Tomas Katkus, Soon Hock Ng, Stefan Lundgaard, David J. Moss, Hamza Kurt, et al. "Optically-Thin Broadband Graphene-Membrane Photodetector." Nanomaterials 10, no. 3 (February 25, 2020): 407. http://dx.doi.org/10.3390/nano10030407.

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A broadband graphene-on-Si3N4-membrane photodetector for the visible-IR spectral range is realised by simple lithography and deposition techniques. Photo-current is produced upon illumination due to presence of the build-in potential between dissimilar metal electrodes on graphene as a result of charge transfer. The sensitivity of the photo-detector is ∼1.1 μA/W when irradiated with 515 and 1030 nm wavelengths; a smaller separation between the metal contacts favors gradient formation of the built-in electric field and increases the efficiency of charge separation. This optically-thin graphene-on-membrane photodetector and its interdigitated counterpart has the potential to be used within 3D optical elements, such as photonic crystals, sensors, and wearable electronics applications where there is a need to minimise optical losses introduced by the detector.
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Li, Gaolin, Zhenhua Jiang, Weilin Wang, Zengyong Chu, Ye Zhang, and Chunhua Wang. "Electrospun PAN/MAPbI3 Composite Fibers for Flexible and Broadband Photodetectors." Nanomaterials 9, no. 1 (January 2, 2019): 50. http://dx.doi.org/10.3390/nano9010050.

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Methylammonium lead triiodide perovskite (CH3NH3PbI3, MAPbI3) has been emerging as an easy processing and benign defect material for optoelectronic devices. Fiber-like perovskite materials are especially in demand for flexible applications. Here we report on a kind of polyacrylonitrile (PAN)/MAPbI3 composite fiber, which was electrospun from the mixing solution of PAN and MAPbI3. The absorption edge and optical gap of the PAN/MAPbI3 composite fibers can be easily tuned as the ratio of the perovskite changes. Both the moisture stability and the thermal stability of the perovskite are improved with the protection of PAN polymers. Flexible photodetectors based on this perovskite fiber were fabricated and analyzed. The photoresponse of the detector was highly sensitive to broadband visible light, and reached 6.5 μA W−1 at 700 nm with a voltage bias of 10 V. Compared with pure MAPbI3 photodetectors, this composite fiber photodetector has much-improved stability and flexibility, which can even be used to detect motion-related angular changes.
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35

Tan, Chee H., Ian C. Sandall, Xinxin Zhou, and Sanjay Krishna. "InAs-QDIP hybrid broadband infrared photodetector." MRS Advances 1, no. 48 (2016): 3301–6. http://dx.doi.org/10.1557/adv.2016.457.

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ABSTRACTWe demonstrated that an InAs photodiode and a Quantum Dot Infrared Photodiode can be bonded to produce a hybrid broadband infrared photodetector. When cooled to 77 K the InAs photodiode can be used to detect wavelengths from visible to a cutoff wavelength of 3 μm while the Quantum Dot Infrared Photodiode detects wavelengths from 3 to 12 μm. The dark current and spectral response were measured on reference devices and bonded devices. Both sets of devices show similar dark current and spectral response, suggesting that no significant degradation of the devices after the bonding process.
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Xu, Jianbao, Junxiong Hu, Rubing Wang, Qi Li, Weiwei Li, Yufen Guo, Fengkui Liu, Zaka Ullah, Long Wen, and Liwei Liu. "Ultra-broadband graphene-InSb heterojunction photodetector." Applied Physics Letters 111, no. 5 (July 31, 2017): 051106. http://dx.doi.org/10.1063/1.4997327.

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37

Rana, Amit Kumar, Malkeshkumar Patel, Thanh Tai Nguyen, Ju-Hyung Yun, and Joondong Kim. "Transparent Co3O4/ZnO photovoltaic broadband photodetector." Materials Science in Semiconductor Processing 117 (October 2020): 105192. http://dx.doi.org/10.1016/j.mssp.2020.105192.

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38

Rodríguez, D. F., and P. M. Perillo. "Ultra-fast TiO2 nanopores broadband photodetector." Optical Materials 135 (January 2023): 113315. http://dx.doi.org/10.1016/j.optmat.2022.113315.

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39

Pan, Xiyan, Hai Zhou, Ronghuan Liu, Dingjun Wu, Zehao Song, Xiaoming Tang, Xiaohan Yang, and Hao Wang. "Achieving a high-performance, self-powered, broadband perovskite photodetector employing MAPbI3 microcrystal films." Journal of Materials Chemistry C 8, no. 6 (2020): 2028–35. http://dx.doi.org/10.1039/c9tc05668h.

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Niu, Yingying, Biao Wang, Jiapeng Chen, and Dong Wu. "Ultra-broadband and highly responsive photodetectors based on a novel EuBiTe3flake material at room temperature." Journal of Materials Chemistry C 6, no. 4 (2018): 713–16. http://dx.doi.org/10.1039/c7tc04255h.

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Li, Xinxin, Zhen Deng, Ziguang Ma, Yang Jiang, Chunhua Du, Haiqiang Jia, Wenxin Wang, and Hong Chen. "Demonstration of SWIR Silicon-Based Photodetection by Using Thin ITO/Au/Au Nanoparticles/n-Si Structure." Sensors 22, no. 12 (June 16, 2022): 4536. http://dx.doi.org/10.3390/s22124536.

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Plasmonic photodetection based on the hot-electron generation in nanostructures is a promising strategy for sub-band detection due to the high conversion efficiencies; however, it is plagued with the high dark current. In this paper, we have demonstrated the plasmonic photodetection with dark current suppression to create a Si-based broadband photodetector with enhanced performance in the short-wavelength infrared (SWIR) region. By hybridizing a 3 nm Au layer with the spherical Au nanoparticles (NPs) formed by rapid thermal annealing (RTA) on Si substrate, a well-behaved ITO/Au/Au NPs/n-Si Schottky photodetector with suppressed dark current and enhanced absorption in the SWIR region is obtained. This optimized detector shows a broad detection beyond 1200 nm and a high responsivity of 22.82 mA/W at 1310 nm at −1 V, as well as a low dark current density on the order of 10−5 A/cm2. Such a Si-based plasmon-enhanced detector with desirable performance in dark current will be a promising strategy for realization of the high SNR detector while keeping fabrication costs low.
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Wu, Di, Cheng Jia, Fenghua Shi, Longhui Zeng, Pei Lin, Lin Dong, Zhifeng Shi, Yongtao Tian, Xinjian Li, and Jiansheng Jie. "Mixed-dimensional PdSe2/SiNWA heterostructure based photovoltaic detectors for self-driven, broadband photodetection, infrared imaging and humidity sensing." Journal of Materials Chemistry A 8, no. 7 (2020): 3632–42. http://dx.doi.org/10.1039/c9ta13611h.

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A self-driven and broadband photodetector based on PdSe2/SiNWA mixed-dimensional vdW heterojunction is fabricated, which shows a broadband spectrum from 200 nm to 4.6 μm with a high polarization sensitivity and good mid-infrared imaging capability.
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43

Guo, Ruiqi, Ting Shen, and Jianjun Tian. "Broadband hybrid organic/CuInSe2 quantum dot photodetectors." Journal of Materials Chemistry C 6, no. 10 (2018): 2573–79. http://dx.doi.org/10.1039/c8tc00288f.

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44

Xiao, Haodong, Lin Lin, Jia Zhu, Junxiong Guo, Yizhen Ke, Linna Mao, Tianxun Gong, Huanyu Cheng, Wen Huang, and Xiaosheng Zhang. "Highly sensitive and broadband photodetectors based on WSe2/MoS2 heterostructures with van der Waals contact electrodes." Applied Physics Letters 121, no. 2 (July 11, 2022): 023504. http://dx.doi.org/10.1063/5.0100191.

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A nanoscale photodetector is a crucial part of intelligent imaging and wireless communication devices. Building van der Waals (vdWs) heterostructures based on two-dimensional transition metal dichalcogenides is thought to be a smart approach for achieving nanoscale photodetectors. However, the pinning effect induced by surface states, defects, and metal-induced gap states during the fabrication process of vdWs heterostructures and contacting electrodes leads to a large Schottky barrier and consequently limits the photoresponse of vdWs heterostructures. In this study, a photodetector based on the WSe2/MoS2 heterostructure with graphene (Gr)/indium tin oxide (ITO) hybrid electrodes has been fabricated. The vdWs contacts established between the exfoliated graphene layers and WSe2/MoS2 heterostructure are able to get rid of lattice damages caused by atom bombardment during the deposition of metal electrodes. In addition, the reduced Schottky barrier at graphene/heterostructure interfaces facilitates the transport of carriers. Experimental results show that the photodetector based on WSe2/MoS2 heterostructures with Gr/ITO hybrid electrodes exhibits a high responsivity of up to 1236.5 A W−1, a detectivity of up to 1.23 × 1013 Jones, and a fast response of 270/130 μs to light from the ultraviolet to near-infrared range.
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Yu, Yang-Yen, Yan-Cheng Peng, Yu-Cheng Chiu, Song-Jhe Liu, and Chih-Ping Chen. "Realizing Broadband NIR Photodetection and Ultrahigh Responsivity with Ternary Blend Organic Photodetector." Nanomaterials 12, no. 8 (April 18, 2022): 1378. http://dx.doi.org/10.3390/nano12081378.

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With the advancement of portable optoelectronics, organic semiconductors have been attracting attention for their use in the sensing of white and near-infrared light. Ideally, an organic photodiode (OPD) should simultaneously display high responsivity and a high response frequency. In this study we used a ternary blend strategy to prepare PM6: BTP-eC9: PCBM–based OPDs with a broad bandwidth (350–950 nm), ultrahigh responsivity, and a high response frequency. We monitored the dark currents of the OPDs prepared at various PC71BM blend ratios and evaluated their blend film morphologies using optical microscopy, atomic force microscopy, and grazing-incidence wide-angle X-ray scattering. Optimization of the morphology and energy level alignment of the blend films resulted in the OPD prepared with a PM6:BTP-eC9:PC71BM ternary blend weight ratio of 1:1.2:0.5 displaying an extremely low dark current (3.27 × 10−9 A cm−2) under reverse bias at −1 V, with an ultrahigh cut-off frequency (610 kHz, at 530 nm), high responsivity (0.59 A W–1, at −1.5 V), and high detectivity (1.10 × 1013 Jones, under a reverse bias of −1 V at 860 nm). Furthermore, the rise and fall times of this OPD were rapid (114 and 110 ns), respectively.
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46

Zhu, Qinghai, Peng Ye, Youmei Tang, Xiaodong Zhu, Zhiyuan Cheng, Jing Xu, and Mingsheng Xu. "High-performance broadband photoresponse of self-powered Mg2Si/Si photodetectors." Nanotechnology 33, no. 11 (December 22, 2021): 115202. http://dx.doi.org/10.1088/1361-6528/ac3f53.

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Abstract Infrared optoelectronic devices are capable of operating in harsh environments with outstanding confidentiality and reliability. Nevertheless, suffering from the large band gap value, most semiconductor materials are difficult to detect infrared light signals. Here, Mg2Si/Si heterojunction photodetectors (PDs), which possess the advantages of low-cost, easy process, environmental friendliness, and compatibility with silicon CMOS technology, have been reported with a broadband spectral response as tested from 532 to 1550 nm under zero-bias. When the incident light wavelength is 808 nm, the Mg2Si/Si photodetector (PD) has a responsivity of 1.04 A W−1 and a specific detectivity of 1.51 × 1012 Jones. Furthermore, we find that the Ag nanoparticles (Ag_NPs) assembled on the Mg2Si layer can greatly improve the performance of the Mg2Si/Si PD. The responsivity and specific detectivity of Mg2Si/Si device with Ag_NPs under 808 nm illumination are 2.55 A W−1 and 2.60 × 1012 Jones, respectively. These excellent photodetection performances can be attributed to the high-quality of our grown Mg2Si material and the strong built-in electric field effect in the heterojunction, which can be further enhanced by the local surface plasmon effect and local electromagnetic field induced by Ag_NPs. Our study would provide significant guidance for the development of new self-powered infrared PDs based on silicon materials.
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Hou, Zhidong, Cuicui Ling, Xin Xue, Chao Ma, Jiawen Fu, and Qingzhong Xue. "Surface lattice reconstruction enhanced the photoresponse performance of a self-powered ZnO nanorod arrays/Si heterojunction photodetector." Journal of Materials Chemistry C 8, no. 48 (2020): 17440–49. http://dx.doi.org/10.1039/d0tc04032k.

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48

Veeralingam, Sushmitha, Pinki Yadav, and Sushmee Badhulika. "An Fe-doped ZnO/BiVO4 heterostructure-based large area, flexible, high-performance broadband photodetector with an ultrahigh quantum yield." Nanoscale 12, no. 16 (2020): 9152–61. http://dx.doi.org/10.1039/c9nr10776b.

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Huang, Zhongzheng, Junku Liu, Tianfu Zhang, Yuanhao Jin, Jiaping Wang, Shoushan Fan, and Qunqing Li. "Interfacial Gated Graphene Photodetector with Broadband Response." ACS Applied Materials & Interfaces 13, no. 19 (May 8, 2021): 22796–805. http://dx.doi.org/10.1021/acsami.1c02738.

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Huang, Zhongzheng, Tianfu Zhang, Junku Liu, Lihui Zhang, Yuanhao Jin, Jiaping Wang, Kaili Jiang, Shoushan Fan, and Qunqing Li. "Amorphous MoS2 Photodetector with Ultra-Broadband Response." ACS Applied Electronic Materials 1, no. 7 (June 24, 2019): 1314–21. http://dx.doi.org/10.1021/acsaelm.9b00247.

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