Relevant bibliographies by topics / Breakdown electrical luminescence

Academic literature on the topic 'Breakdown electrical luminescence'

Author: Grafiati
Published: 30 May 2022
Last updated: 31 May 2022

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Journal articles on the topic "Breakdown electrical luminescence"

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Osinsky, A., M. S. Shur, R. Gaska, and Q. Chen. "Avalanche breakdown and breakdown luminescence in p--n GaN diodes." Electronics Letters 34, no. 7 (1998): 691. http://dx.doi.org/10.1049/el:19980535.

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Karel, F., J. Oswald, J. Pastrnak, and O. Petricek. "Impurity breakdown and electric-field-dependent luminescence in MBE and VPE GaAs layers." Semiconductor Science and Technology 7, no. 2 (February 1, 1992): 203–9. http://dx.doi.org/10.1088/0268-1242/7/2/005.

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Mankovics, D., A. Klossek, Ch Krause, T. Arguirov, W. Seifert, and M. Kittler. "Luminescence of defects and breakdown sites in multicrystalline silicon solar cells." physica status solidi (a) 209, no. 10 (July 23, 2012): 1908–12. http://dx.doi.org/10.1002/pssa.201200133.

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Foulani, A., C. Laurent, and P. Canet. "Surface plasmon-induced luminescence: a probe to study electrical aging and dielectric breakdown in polymer-like thin films." Journal of Non-Crystalline Solids 187 (July 1995): 415–19. http://dx.doi.org/10.1016/0022-3093(95)00173-5.

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Wang, Chao, Ying Wen, Jinbo Zhang, Qilin Zhang, and Juwei Qiu. "The Modulation Effect on the ELVEs and Sprite Halos by Concentric Gravity Waves Based on the Electromagnetic Pulse Coupled Model." Atmosphere 12, no. 5 (May 11, 2021): 617. http://dx.doi.org/10.3390/atmos12050617.

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By employing the finite-difference time-domain method, the processes of electric field variation and morphological development of the optical radiation field of ELVEs and sprite halos were simulated in this article. Simulations of ELVEs show two optical radiation field centers, with a concentrated luminous zone from 85 to 100 km and an inner weaker optical radiation center. The electric field exhibits an obvious sparse and dense ripple pattern induced by the concentric gravity waves (CGWs) at altitudes of 90–100 km, which mainly occurs during the decline period of electric field with a shallow steepness. The alternating distance of the variations in the sparse and dense patterns is about 40 km, which corresponds to the horizontal wavelength of the electric field. The CGWs induce significant deformation of the inner optical radiation field, even splitting into multiple luminous regions. Simulations of sprite halos indicate that the horizontal range of the electrical field generated by lightning current is within 50 km, and a strong local electric field formed in the region right above the lightning channel is due to the small-scale breakdown current. Thus, the increased electron density shields the upper regions and reduces the electrical field’s strength. The sprite halos luminous zone is pancake-shaped, and it originates at 85 km along with a downward developing trend. The disturbance of sprite halos’ luminescence caused by CGWs mainly occurs at about 80–100 km directly above the lightning channel, and the primary deformation zone is located within 30 km of the lightning channel, which is also the region with the most recognizable electric field disturbance.
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Shalygin, V. A., L. E. Vorobjev, D. A. Firsov, V. Yu Panevin, A. N. Sofronov, G. A. Melentyev, A. V. Antonov, et al. "Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field." Journal of Applied Physics 106, no. 12 (December 15, 2009): 123523. http://dx.doi.org/10.1063/1.3272019.

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Yuan, Kang, Rui Ma, Li Yang, Yang Yang, and Jiaming Sun. "Modulation of the dielectric property of Ga2O3/TiO2 nanolaminates and their improvement on the electroluminescence from devices based on Er-doped Al2O3 nanofilms." Journal of Physics D: Applied Physics 55, no. 23 (March 9, 2022): 235101. http://dx.doi.org/10.1088/1361-6463/ac5942.

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Abstract Metal-oxide-semiconductor light-emitting devices (MOSLEDs) based on the erbium doped Al2O3 nanofilms still suffer from insufficient and unstable electrical injection, and the dielectric protection layers play an important role in their performance. Here, Ga2O3/TiO2 (GTO) nanolaminate films are fabricated by atomic layer deposition, the dielectric constant and leakage current of which are gradually regulated by alternating the component ratios. The tolerance to electric field and electron injection for the Al2O3:Er MOSLEDs is significantly improved, leading to the enhanced electroluminescence performance. The optimal GTO nanolaminate with thickness ratio of 4:6 could withstand the maximum breakdown electric field reaching 4.17 MV cm−1 while maintaining a high electric field of 8.4 ± 0.1 MV cm−1 within the luminescent Al2O3:Er layer (under injection of 0.3 A cm−2), resulting in the optical power density up to 11.37 mW cm−2. Much higher excitation efficiencies are also achieved with external quantum efficiency of 19.35%, and the operation time of the prototype Al2O3:Er MOSLEDs is significantly enhanced by more than two orders of magnitude from 48 s (I= 0.2 μA) to 7308 s (I = 1 μA). The design principle of the dielectric nanolaminates has been deduced, considering the dielectric and conductive contribution of different oxides, which supplies a promising route to further explore the application of optoelectronic devices based on oxides.
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Lombardo, S., S. U. Campisano, G. N. Van Den Hoven, and A. Polman. "Electroluminescence of Erbium in Oxygen Doped Silicon." MRS Proceedings 422 (1996). http://dx.doi.org/10.1557/proc-422-333.

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AbstractIt is demonstrated room-temperature electroluminescence at 1.54 μm in erbiumimplanted oxygen doped silicon (27 at. 0), due to intra-4f transitions of the Er3+. The luminescence is electrically stimulated by biasing metal-(Si:O,Er)-p+ silicon diodes. The 30 nm thick Si:O,Er films are amorphous layers deposited onto silicon substrates by chemical vapour deposition of SiH4 and N20, doped by ion implantation with Er to a concentration up to ≈ 1.5 at.%, and annealed in a rapid thermal annealing furnace. The most intense electroluminescence is obtained in samples annealed at 400°C in reverse bias under breakdown condition and it is attributed to impact excitation of erbium by hot carriers injected from the Si into the Si:O,Er layer. The electrical characteristics of the diode are studied in detail and related to the electroluminescence characteristics. A lower limit for the impact excitation cross-section of ≈6×10−16 cm2 is obtained.
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Zhang, Shengkun, X. Zhou, Wubao Wang, R. R. Alfano, A. M. Dabiran, A. Osinky, A. M. Wowchak, B. Hertog, C. Plaut, and P. P. Chow. "Low-voltage Avalanche Breakdown in AlGaN Multi-quantum Wells." MRS Proceedings 955 (2006). http://dx.doi.org/10.1557/proc-0955-i15-23.

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ABSTRACTIn this work, electro-luminescence (EL) of a AlGaN p-i-n diode have been investigated in both avalanche and injection modes. The active i-region of the diode consists of Al0.1Ga0.9N/Al0.15Ga0.85N MQWs. Strong interband luminescence from the Al0.1Ga0.9N active layers was observed when operating the device in both avalanche and injection modes. The threshold voltage for avalanche breakdown is as low as 9 V. This indicates that the impact ionization coefficient of electrons is greatly enhanced in these Al0.1Ga0.9N/Al0.15Ga0.85N MQWs comparing to AlGaN bulk materials. Polarization-induced electric fields in the Al0.1Ga0.9N well layers are believed to be responsible for the enhancement of the ionization coefficient. In a control sample that has higher defect density, the electroluminescence was dominated by long-wavelength emissions, which results from impact ionizations of the defect levels.
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Manyakhin, F., A. Kovalev, V. E. Kudryashov, A. N. Turkin, and A. E. Yunovich. "Avalanche Breakdown Luminescence of InGaN/AlGaN/GaN Heterostructures." MRS Internet Journal of Nitride Semiconductor Research 2 (1997). http://dx.doi.org/10.1557/s109257830000137x.

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Luminescence spectra of InGaN/AlGaN/GaN p-n-heterostructures were studied at reverse bias sufficient for impact ionization. There is a high electric field in the active InGaN-layer, and the tunnel component of the current dominates at the low reverse bias. Avalanche breakdown begins at |Vth|> 8⋄10 V, i.e. ≈3 Eg/e. Radiation spectra have a short wavelength edge 3.40 eV, and maxima in the range 2.60⋄2.80 eV corresponding to the injection spectra. Mechanisms of the hot plasma recombination in p-n-heterojunctions are discussed.
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Dissertations / Theses on the topic "Breakdown electrical luminescence"

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Chen, Kevin M. (Kevin Ming) 1974. "Electrical breakdown and luminescence from erbium oxide and Er-doped silicon thin films." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/9816.

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Генкін, Олексій Михайлович. "Еталонні джерела оптичного випромінювання на основі явища електричного пробою у P-N-структурах на карбіді кремнію." Doctoral thesis, 2010. https://ela.kpi.ua/handle/123456789/643.

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