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Journal articles on the topic 'Boron diffusion'

Author: Grafiati

Published: 4 June 2021

Last updated: 11 February 2022

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1

Wirbeleit, Frank. "Non-Gaussian Local Density Diffusion (LDD-) Model for Boron Diffusion in Si- and Si_xGe_1-x Ultra-Shallow Junction Post-Implant and Advanced Rapid-Thermal-Anneals." Defect and Diffusion Forum 305-306 (October 2010): 71–84. http://dx.doi.org/10.4028/www.scientific.net/ddf.305-306.71.

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Boron diffusion after implant and anneal has been studied extensively in the past, without de-convoluting the Boron diffusion behavior by the initial post implant Boron concentration profile, which is done in this work first time. To support the de-convolution approach, the local density diffusion (LDD) model is selected, because this model is based on just one single arbitrary diffusion parameter per atomic species and host lattice combination. The LDD model is used for Phosphorus and Arsenic diffusion so far and an extension to simulate Boron diffusion in presence of Boron clusters is presented here. As the result, maximum Boron penetration depth post different rapid thermal anneals and the quantification of diffusing and clustering (non-diffusing) Boron in silicon and silicon-germanium host lattice systems are given.

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2

Wirbeleit, Frank. "Local Density Diffusivity (LDD-) Model for Boron Out-Diffusion of In Situ Boron-Doped Si_0.75Ge_0.25 Epitaxial Films Post Advanced Rapid Thermal Anneals with Carbon Co-Implant." Defect and Diffusion Forum 307 (December 2010): 63–73. http://dx.doi.org/10.4028/www.scientific.net/ddf.307.63.

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Boron in silicon has presented challenges for decades because of clustering and so-called transient enhanced diffusion [1-2]. An understanding of boron diffusion post rapid thermal annealing in general, and out of in situ doped epitaxially grown silicon-germanium films in particular, is essential to hetero junction engineering in microelectronic device technology today. In order to model boron diffusion, post-implantation, the local density diffusion (LDD) model has been applied in the past [3]. Via mathematical convolution of the diffusion model slope and the initial boron concentration profile, these former results were transferred to this work. In this way, non-diffusing boron was predicted to exist in the center of the presented in situ boron-doped films. In addition, boron diffusion control by co-implanted carbon was demonstrated and the applied LDD model was completed and confirmed by adapting A. Einstein’s proof [4] for this purpose.

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3

Aleksandrov, O. V., and E. N. Mokhov. "Boron Diffusion in Silicon Carbide." Materials Science Forum 740-742 (January 2013): 561–64. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.561.

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For the description of features of boron diffusion of in silicon carbide the new two-component model is offer. The first component is the “shallow” boron - boron atoms in silicon sites (BSi). This component is prevailed in the surface region of diffusion layers and has rather low speed of diffusion. The second component is the “deep” boron – impurity-defect pairs of boron with carbon vacancy (BSi-VC). This component is prevailed in the volume region of diffusion layers and has rather high speed of diffusion. By means of model the influence of nitrogen impurity and isoconcentration diffusion of an isotope 10B are described.

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4

Agarwal, Aditya, H. J. Gossmann, and D. J. Eaglesham. "Boron-enhanced diffusion of boron: Physical mechanisms." Applied Physics Letters 74, no. 16 (April 19, 1999): 2331–33. http://dx.doi.org/10.1063/1.123841.

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5

Marchiando, J. F., P. Roitman, and J. Albers. "Boron diffusion in silicon." IEEE Transactions on Electron Devices 32, no. 11 (November 1985): 2322–30. http://dx.doi.org/10.1109/t-ed.1985.22278.

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6

Borowiecka-Jamrozek, J., and J. Lachowski. "Diffusion of Boron in Cobalt Sinters." Archives of Metallurgy and Materials 58, no. 4 (December 1, 2013): 1131–36. http://dx.doi.org/10.2478/amm-2013-0137.

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Abstract The paper describes the process of diffusion taking place at the surface of sinters produced from Co Extrafine powder after saturation with boron. Boronizing was performed at a temperature of 950°C for 6 and 12 hours by applying B4C powder as a depositing source, NH4Cl + NaF as an activator and Al2O3 as an inert filler. The study involved determining the diffusion coefficient, which required analyzing the microstructure and thickness of the layers and the process time. The images obtained with a Leica DM-4000 optical microscope revealed a two-phase structure of the boride layers. The presence of the two phases, i.e. CoB and Co2B, was confirmed by X-ray diffraction (XRD). A model of diffusion of boron atoms into the cobalt substrate was developed assuming the reaction diffusion mechanism. This model was used to calculate the diffusion coefficient. It required taking account of the interatomic potentials of boron and cobalt. The calculation results were compared with the experimental data concerning the diffusion of boron in other materials.

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7

Atabaev, I. G., Chin Che Tin, B. G. Atabaev, T. M. Saliev, E. N. Bakhranov, N. A. Matchanov, S. L. Lutpullaev, et al. "Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC." Materials Science Forum 600-603 (September 2008): 457–60. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.457.

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The characteristics of boron diffusion in 3C-SiC at low temperature have been measured using spreading resistance technique and electroluminescence spectroscopy. The coefficient of boron diffusion in the temperature range of 1150 –1250°С has been found to be about 5.5 x 10-11–5.0 x 10-10 cm2/sec and the activation energy of boron diffusion was determined to be about 0.9 –1.15 eV. Electroluminescence spectra of 3C-SiC p-n junction structures showed peaks at 750 and 630 nm due to growth defects and carbon-silicon divacancies respectively.

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8

Shevchuk, E. P., V. A. Plotnikov, and G. S. Bektasova. "Boron Diffusion in Steel 20." Izvestiya of Altai State University, no. 1(111) (March 6, 2020): 58–62. http://dx.doi.org/10.14258/izvasu(2020)1-08.

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As is known, boriding is carried out to increase the wear resistance and corrosion resistance of iron-carbon alloys. Along with high hardness, borides, unfortunately, have very high fragility and high refractoriness. An effective way to counter the fragility of boride layers is to form a composite structure consisting of inclusions of solid borides in a more plastic matrix. Such coatings can be obtained by volumetric heating in a muffle furnace using a boron paste that besides a mixture of iron and boron powders contained ammonium hydroxide and activated carbon with or without liquid glass. Boriding of a surface is carried out at high temperatures =1000 °С for 5 minutes. It is experimentally found that the microhardness of the surface layer increased by about 30% compared with the microhardness of the substrate, and that the thickness of the boride layer depends on the presence of liquid glass in the coating. It has been established that specially calculated proportions of ammonia, liquid glass, and charcoal contribute to the formation of an extensive diffusion zone of iron borides, the formation of which is due to the anomalously high diffusion mass transfer of boron into the matrix.

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9

Venezia, V. C., R. Duffy, L. Pelaz, M. J. P. Hopstaken, G. C. J. Maas, T. Dao, Y. Tamminga, and P. Graat. "Boron diffusion in amorphous silicon." Materials Science and Engineering: B 124-125 (December 2005): 245–48. http://dx.doi.org/10.1016/j.mseb.2005.08.079.

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10

La Via, F., K. T. F. Janssen, and A. H. Reader. "Boron diffusion in Co74Ti26amorphous alloy." Applied Physics Letters 60, no. 6 (February 10, 1992): 701–3. http://dx.doi.org/10.1063/1.106542.

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11

Wang, Wendong, Sanhong Zhang, and Xinlai He. "Diffusion of boron in alloys." Acta Metallurgica et Materialia 43, no. 4 (April 1995): 1693–99. http://dx.doi.org/10.1016/0956-7151(94)00347-k.

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12

Sung, T., G. Popovici, M. A. Prelas, R. G. Wilson, and S. K. Loyalka. "Boron diffusion into diamond under electric bias." Journal of Materials Research 12, no. 5 (May 1997): 1169–71. http://dx.doi.org/10.1557/jmr.1997.0161.

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Three natural type IIa diamond crystals were used for forced diffusion of boron. The diffusion was performed under bias otherwise with the same conditions. The boron diffusion coefficient in diamond was found to be 8.4 × 10−15 and 4 × 10−14 cm2/s at 1000 °C, depending on the direction of the electric field. The drift velocity of boron in diamond under 850 V at 1000 °C was found to be about 1.2 × 10−8 cm/s.

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13

Li, Wei, Huan Yang, Shuaifeng Chen, Qing Chen, Lijie Luo, Jianbao Li, Yongjun Chen, and Changjiu Li. "Temperature-Dependent Morphology Evolution of Boron Nitride and Boron Carbonitride Nanostructures." Journal of Nanomaterials 2019 (March 6, 2019): 1–11. http://dx.doi.org/10.1155/2019/3572317.

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Boron nitride (BN) and boron carbonitride (BCN) nanostructures with versatile morphology were synthesized at different temperatures. The morphologies such as smooth microspheres, nanoflake-decorated microspheres, solid nanowires, hollow nanotubes (bamboo-like nanotubes, quasi-cylindrical nanotubes, and cylindrical nanotubes), and nanosheet-assembled microwires have been observed. Systematic investigation showed that the reaction temperature was responsible for the versatile morphologies through influencing the guiding effect of catalyst alloy droplet and the diffusion rates of growth species. The diffusion rate differences between surface diffusion (along the surface of the droplet) and bulk diffusion (through the bulk of the droplet) at different reaction temperatures were suggested to affect the final structure of the BN and BCN nanostructures.

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14

Armand, Jimmy, Cyril Oliver, F. Martinez, B. Semmache, M. Gauthier, Alain Foucaran, and Yvan Cuminal. "Modeling of the Boron Emitter Formation Process from BCl₃ Diffusion for N-Type Silicon Solar Cells Processing." Advanced Materials Research 324 (August 2011): 261–64. http://dx.doi.org/10.4028/www.scientific.net/amr.324.261.

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This work is devoted to the study of boron doping diffusion process for n-type silicon solar cells applications. Deposition temperature is an important parameter in the diffusion process. In this paper we investigate its influence using an industrial scale furnace [1] (LYDOPTM Boron), which is developed by Semco Engineering. We especially used a numerical model (Sentaurus) in order to further understand the boron diffusion mechanism mainly with respect of the diffusion temperature. The model calibration is based on boron concentration profiles obtained by SIMS (Secondary Ion Mass Spectrometry) analysis. We observed that the boron profiles could be correctly simulated by a single fitting parameter. This parameter, noted kBoron which is connected to the chemical reaction kinetics developed at the interface between the boron silicon glass (BSG) and the silicon substrate

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15

Bolotnikov, A. V., Peter G. Muzykov, Anant K. Agarwal, Qing Chun Jon Zhang, and Tangali S. Sudarshan. "Two-Branch Boron Diffusion from Gas Phase in n-Type 4H-SiC." Materials Science Forum 615-617 (March 2009): 453–56. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.453.

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In this work the analysis of thermal diffusion of boron carried out from vapor phase was performed. Two-branch diffusion associated with kick-out and substitution mechanisms was observed. The activation energy and prefactor were calculated from Arrhenius plot for each diffusion branch. It has been established that the surface layer of diffused boron mostly consists of shallow boron acceptors, while the tail of the diffusion profile has mostly deep level D centers.

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16

Campos-Silva, Ivan, M. Ortíz-Domínguez, C. VillaVelázquez, R. Escobar, and N. López. "Growth Kinetics of Boride Layers: A Modified Approach." Defect and Diffusion Forum 272 (March 2008): 79–86. http://dx.doi.org/10.4028/www.scientific.net/ddf.272.79.

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This study evaluates the boron diffusion in the Fe2B phase formed at the surface of AISI 1018 steels during the paste boriding process. The treatment was carried out at temperatures of 1123, 1173, 1223 and 1273 K with 2, 4, 5, 6 and 8 h exposure times for each temperature using a 4 mm layer thickness of boron carbide paste over the material surface. The boron diffusion coefficient Fe2B D was determined by the mass balance equation and the boride incubation time assuming that the boride layers obey the parabolic growth law, while the boron concentration profile along the interphase Fe2B/substrate was unknown. The boron diffusion coefficient was interpreted as a function of the treatment temperature, obtaining the activation energy value for diffusion controlled growth of Fe2B boride phase.

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17

Mochizuki, Kazuhiro, Haruka Shimizu, and Natsuki Yokoyama. "Modeling of Boron Diffusion and Segregation in Poly-Si/4H-SiC Structures." Materials Science Forum 645-648 (April 2010): 243–46. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.243.

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Boron diffusion in boron-doped poly-Si/nitrogen-doped 4H-SiC structure was investigated by combining a reported model of poly-Si diffusion sources with the authors’ model of boron diffusion in 4H-SiC. By taking the limited supply of carbon interstitials at heterointerfaces into account, we determined a segregation coefficient of 4 to 8 and an activation energy of 0.20 eV in the temperature range of 650 to 1000°C.

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18

Agarwal, Aditya, H. J. Gossmann, D. J. Eaglesham, S. B. Herner, A. T. Fiory, and T. E. Haynes. "Boron-enhanced diffusion of boron from ultralow-energy ion implantation." Applied Physics Letters 74, no. 17 (April 26, 1999): 2435–37. http://dx.doi.org/10.1063/1.123872.

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19

Shevchuk, E. P., V. A. Plotnikov, and G. S. Bektasova. "Boron Diffusion During Carbon Steel Boriding." Izvestiya of Altai State University, no. 1(117) (March 17, 2021): 64–67. http://dx.doi.org/10.14258/izvasu(2021)1-10.

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Protective boride coatings are obtained by chemical-thermal treatment of powder mixtures during induction furnace heating and micro-arc chemical-thermal treatment. Their usage can significantly increase the reliability and durability of steel products. The calculated composition of the saturating charge and the welding flux used to boride steel 20 samples demonstrates that obtained boride diffusion coatings are characterized by high hardness and an extensive diffusion zone. The most optimal composition of the charge that contains iron and boric acid is found to be in the proportion of Fe-25%+H3BO3-75 %. The analysis of the distribution of microhardness over the cross section of coated samples is carried out. The comparative data for the diffusion coefficients and the thickness of the diffusion layers obtained experimentally are presented. The application of the discussed methods makes it possible to intensify the process of diffusion boriding and to ensure the formation of an extensive diffusion zone on the surface of carbon steel products with a high rate of hardening zone formation. The duration of the process is 5 minutes for the induction treatment and 54.05 s for micro-arc chemical-thermal surfacing. It is the main advantage of the experimental techniques mentioned above.

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20

Kurachi, Ikuo, and Kentaro Yoshioka. "Investigation of Boron Thermal Diffusion from Atmospheric Pressure Chemical Vapor Deposited Boron Silicate Glass for N-Type Solar Cell Process Application." International Journal of Photoenergy 2016 (2016): 1–8. http://dx.doi.org/10.1155/2016/8183673.

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An atmospheric pressure chemical vapor deposition (AP-CVD) system has been newly developed for boron silicate glass (BSG) film deposition dedicating to solar cell manufacturing. Using the system, thermal boron diffusion from the BSG film is investigated and confirmed in terms of process stability for surface property before BSG deposition and BSG thickness. No degradation in carrier lifetime is also confirmed. A boron diffusion simulator has been newly developed and demonstrated for optimization of this process. Then, the boron thermal diffusion from AP-CVD BSG is considered to be the suitable method for N-type silicon solar cell manufacturing.

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21

Wu, Ji Jun, Wen Hui Ma, Bin Yang, Da Chun Liu, and Yong Nian Dai. "Phase Equilibria of Boron in Metallurgical Grade Silicon at 1300°C." Materials Science Forum 675-677 (February 2011): 85–88. http://dx.doi.org/10.4028/www.scientific.net/msf.675-677.85.

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The diffusion layer and melt of silicon-boron are respectively obtained after quenched in water at 1300 oC by using metallurgical grade silicon (MG-Si) powder and amorphous boron powder. The phase equilibria for boron in MG-Si have been investigated by using X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Energy Dispersive Spectroscopy (EDS). The back scattered electron (BSE) image of diffusion layer displays the intermediate phase SiB4 in silicon-boron phase band, and the XRD results also indicate that SiB4 exists in silicon-boron diffusion layer at 1300 oC. It is inferred that the intermediate phase SiB4 is formed by the reaction (Si) + SiB6 ↔ SiB4 according to the equilibrium composition of Si/B=4/1 as quantified by Energy Dispersive Spectroscopy.

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22

Bockstedte, M., Alexander Mattausch, and Oleg Pankratov. "Kinetic Aspects of the Interstitial-Mediated Boron Diffusion in SiC." Materials Science Forum 483-485 (May 2005): 527–30. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.527.

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Using an ab initio method we analyze the mechanisms of the boron diffusion with emphasis on the role of the intrinsic interstitials. It is shown that the boron diffusion is dominated by a kick-out mechanism. The different effect of silicon and carbon interstitials gives rise to kinetic effects. A preference for a kick-in of the boron interstitial into the carbon lattice sites is found. Kinetic effects reported in co-implantation experiments and in-diffusion experiments are explained by our findings.

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23

An, Dao Khac, Phan Ahn Tuan, Vu Ba Dung, and Nguyen Van Truong. "On the Atomistic Dynamic Modelling of Simultaneous Diffusion of Dopant and Point Defect (B, V, I) in Silicon Material." Defect and Diffusion Forum 258-260 (October 2006): 32–38. http://dx.doi.org/10.4028/www.scientific.net/ddf.258-260.32.

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Understanding the atomic movements of simultanous diffusion of dopant (B) and point defects (V, I) in silicon is of great importance for both experimental and theoretical diffusion studies. This paper presents the atomistic dynamic diffusion modelling of boron (B), self-interstitial (I) and vacancy (V) process in silicon based on simultaneous diffusion of boron dopant and point defects based on a previous developed theory. The simulation is based on the random walk theory with three main diffusion mechanisms: namely vacancy, interstitial and interstitialcy mechanism. The migration frequencies of dopant and point defects have been programmed based on the experimental diffusion data of boron, vacancy and Si self-interstitial. This simulation procedure can be seen very clearly about the atomic movements, the interactions between dopant and point defects via three diffusion mechanisms. The diffusion depth of B, V, I in very short time can be estimated from the simulation picture on the screen. The simulation results reflect the simultaneous diffusion as well as the interaction of boron and point defects via the three diffusion mechanisms. The point defects (V, I) were generated during the dopant diffusion and they diffused further into the depth as shown in the results of the simulation as well as in the previous published experimental findings.

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24

Rüschenschmidt, K., H. Bracht, M. Laube, N. A. Stolwijk, and G. Pensl. "Diffusion of boron in silicon carbide." Physica B: Condensed Matter 308-310 (December 2001): 734–37. http://dx.doi.org/10.1016/s0921-4526(01)00889-4.

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25

Moriya, N., L. C. Feldman, H. S. Luftman, C. A. King, J. Bevk, and B. Freer. "Boron diffusion in strainedSi1−xGexepitaxial layers." Physical Review Letters 71, no. 6 (August 9, 1993): 883–86. http://dx.doi.org/10.1103/physrevlett.71.883.

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26

Kawagishi, Kyoko, Masahiro Susa, Toshio Maruyama, and Kazuhiro Nagata. "Boron Diffusion in Amorphous Silica Films." Journal of The Electrochemical Society 144, no. 9 (September 1, 1997): 3270–75. http://dx.doi.org/10.1149/1.1837996.

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27

Hopkins, L. C., T. E. Seidel, J. S. Williams, and J. C. Bean. "Enhanced Diffusion in Boron Implanted Silicon." Journal of The Electrochemical Society 132, no. 8 (August 1, 1985): 2035–36. http://dx.doi.org/10.1149/1.2114279.

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28

Marmelstein, R., M. Sinder, and J. Pelleg. "Boron Diffusion in TaSi2 Thin Films." physica status solidi (a) 168, no. 1 (July 1998): 223–29. http://dx.doi.org/10.1002/(sici)1521-396x(199807)168:1<223::aid-pssa223>3.0.co;2-4.

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29

Stelmakh, V. F., Yu R. Suprun-Belevich, V. D. Tkachev, and A. R. Chelyadinskii. "Diffusion of Boron Implanted into Silicon." physica status solidi (a) 89, no. 1 (May 16, 1985): K45—K49. http://dx.doi.org/10.1002/pssa.2210890155.

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30

Schnabel, Manuel, Charlotte Weiss, Mariaconcetta Canino, Thomas Rachow, Philipp Löper, Caterina Summonte, Salvo Mirabella, Stefan Janz, and Peter R. Wilshaw. "Boron diffusion in nanocrystalline 3C-SiC." Applied Physics Letters 104, no. 21 (May 26, 2014): 213108. http://dx.doi.org/10.1063/1.4880722.

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31

Liu, T., and M. K. Orlowski. "Arsenic diffusion in boron‐doped germanium." Electronics Letters 49, no. 2 (January 2013): 154–56. http://dx.doi.org/10.1049/el.2012.3444.

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32

Schmidt, H., G. Borchardt, C. Schmalzried, R. Telle, S. Weber, and H. Scherrer. "Self-diffusion of boron in TiB2." Journal of Applied Physics 93, no. 2 (January 15, 2003): 907–11. http://dx.doi.org/10.1063/1.1530715.

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33

McLellan, R. B. "The diffusion of boron in nickel." Scripta Metallurgica et Materialia 33, no. 8 (October 1995): 1265–67. http://dx.doi.org/10.1016/0956-716x(95)00365-3.

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34

Kim, Jeong-Gyoo, and Choong-Ki Kim. "Two-step rapid thermal diffusion of boron into silicon using a boron nitride solid diffusion source." Journal of Electronic Materials 18, no. 5 (September 1989): 573–77. http://dx.doi.org/10.1007/bf02657468.

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35

Güleryüz, Hasan, Erdem Atar, Fared Seahjani, and Hüseyin Çimenoğlu. "An Overview on Surface Hardening of Titanium Alloys by Diffusion of Interstitial Atoms." Diffusion Foundations 4 (July 2015): 103–16. http://dx.doi.org/10.4028/www.scientific.net/df.4.103.

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In this paper, diffusional surface hardening processes utilized to overcome the poor tribological performance of titanium and its alloys is briefly introduced. More specifically, surface treatments known as thermal oxidation, nitriding and boriding offering the advantage of producing graded surfaces comprising hard compound layer and diffusion zone by diffusion of interstitial atoms (oxygen, nitrogen and boron) are overviewed.

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36

Campos-Silva, Ivan, M. Ortíz-Domínguez, N. López-Perrusquia, R. Escobar Galindo, O. A. Gómez-Vargas, and E. Hernández-Sánchez. "Determination of Boron Diffusion Coefficients in Borided Tool Steels." Defect and Diffusion Forum 283-286 (March 2009): 681–86. http://dx.doi.org/10.4028/www.scientific.net/ddf.283-286.681.

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The boron diffusion in the Fe2B and FeB borided phases formed at the surface of AISI H13 tool steels during the paste boriding process was estimated. The treatment was carried out at temperatures of 1173, 1223 and 1273 K with 2, 4, 6 and 8 h exposure times for each temperature using a 4 mm layer thickness of boron carbide paste over the material surface. The boride layers were characterized by the GDOES technique to determine in quantitative form the presence of the alloying elements on the borided phases. The boron diffusion coefficients and were determined by the mass balance equation and the boride incubation time assuming that the boride layers obey the parabolic growth law. Also, the mass gain produced by both boride layers at the surface of the tool steels was determined. Finally, the boron diffusion coefficients were interpreted as a function of the treatment temperature, obtaining the activation energy values for the diffusion controlled growth of Fe2B and FeB hard coatings.

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37

Vuong, H. H., Y. H. Xie, M. R. Frei, G. Hobler, L. Pelaz, and C. S. Rafferty. "Use of transient enhanced diffusion to tailor boron out-diffusion." IEEE Transactions on Electron Devices 47, no. 7 (July 2000): 1401–5. http://dx.doi.org/10.1109/16.848283.

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38

Dung, Vu Ba. "Uphill diffusion of Si-interstitial during boron diffusion in silicon." Indian Journal of Physics 91, no. 10 (May 24, 2017): 1233–36. http://dx.doi.org/10.1007/s12648-017-1024-0.

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39

Yeckel, Andrew, and Stanley Middleman. "Mathematical modeling of boron diffusion from boron oxide glass film sources." AIChE Journal 34, no. 9 (September 1988): 1455–67. http://dx.doi.org/10.1002/aic.690340907.

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40

VELICHKO, O. I. "SIMULATION OF BORON DIFFUSION IN THE NEAR-SURFACE REGION OF SILICON SUBSTRATE." Surface Review and Letters 27, no. 11 (August 18, 2020): 2050010. http://dx.doi.org/10.1142/s0218625x20500109.

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The mechanism of boron-enhanced diffusion from a thin boron layer deposited on the surface in the case of silicon crystal doping is proposed and investigated. It was supposed that lattice contraction occurs in the vicinity of the surface due to the difference between the atomic radii of boron and silicon. This lattice contraction provides a stress-mediated diffusion of silicon self-interstitials from the near-surface region to the bulk of a semiconductor. Due to the stress-mediated diffusion, the near-surface region is depleted of silicon self-interstitials, and simultaneous oversaturation of this species occurs in the bulk. In this way, a strong nonuniform distribution of silicon self-interstitials in the vicinity of the surface is formed without regard to the large migration length of this species. The oversaturation of the bulk of a semiconductor with nonequilibrium self-interstitials allows one to explain the boron-enhanced diffusion of impurity atoms. The strong nonuniform distribution of these point defects also results in a specific form of boron concentration profile in the vicinity of the surface. Good agreement of the calculated boron profile with the experimental data for the entire doped region was obtained within the limit of the proposed model.

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41

Linnarsson, Margareta K., J. Isberg, Adolf Schöner, and Anders Hallén. "A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond." Materials Science Forum 600-603 (September 2008): 453–56. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.453.

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The boron diffusion in three kinds of group IV semiconductors: silicon, silicon carbide and synthetic diamond has been studied by secondary ion mass spectrometry. Ion implantation of 300 keV, 11B-ions to a dose of 21014 cm-2 has been performed. The samples are subsequently annealed at temperatures ranging from 800 to 1650 °C for 5 minutes up to 8 hours. In silicon and silicon carbide, the boron diffusion is attributed to a transient process and the level of out-diffusion is correlated to intrinsic carrier concentration. No transient, out-diffused, boron tail is revealed in diamond at these temperatures.

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Lin, Bing-Hong, Yung-Shin Tseng, Jong-Rong Wang, Liang-Che Dai, and Chunkuan Shih. "ICONE19-43157 Boron Evaluation of Diffusion Phenomenon and Distribution in the Core Using Fluent." Proceedings of the International Conference on Nuclear Engineering (ICONE) 2011.19 (2011): _ICONE1943. http://dx.doi.org/10.1299/jsmeicone.2011.19._icone1943_54.

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Wang, Ling Yun, Ru Hai Zhou, Yi Fang Liu, Cheng Zheng, Jian Fa Cai, and Yong He. "Simulation and Typical Application of Multi-Step Diffusion Method for MEMS Device Layers." Key Engineering Materials 645-646 (May 2015): 341–46. http://dx.doi.org/10.4028/www.scientific.net/kem.645-646.341.

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In MEMS device, heavily boron doped layers are widely used as structural layers. For the manufacture of the thick heavily boron doped layer (boron concentration ≥ 5×1019 cm-3), conventional two-step method exposes disadvantages of low efficiency and high energy consumption. Hence, multi-step method is introduced to improve the energy efficiency. In our study, simulation of diffusion in silicon is carried out to compare multi-step method with conventional method. The simulation reveals that multi-step method obtains more quantity of boron dopants and shows better potential to fabricate thick heavily boron doped layers, compared to conventional method within the same total diffusion time. As a typical application of the multi-step method, a butterfly-shape resonant is fabricated.

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44

Hong, Phan Thi Thanh, Vu Van Hung, Nguyen Van Nghia, and Ho Khac Hieu. "Pressure effects on the diffusion of boron and phosphorus in silicon." International Journal of Modern Physics B 33, no. 23 (September 20, 2019): 1950267. http://dx.doi.org/10.1142/s0217979219502679.

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In this work, pressure effects on the diffusion of boron and phosphorus in silicon have been investigated by using the statistical moment method. We consider the diffusion of boron and phosphorus in silicon for wide temperature and pressure ranges revealing the Arrhenius behavior of diffusion coefficients. Activation energies of diffusion of boron and phosphorus in silicon are derived, respectively, as 3.41 and 3.20 eV at ambient pressure. Our work shows that when pressure increases, the diffusivity of B is enhanced characterized by an activation volume of [Formula: see text] ([Formula: see text] is the atomic volume) at temperature 1083 K; and the diffusivity of P is reduced indicated by an activation volume of [Formula: see text] at 1113 K. Our results of activation energies and diffusion coefficients are in agreement with recent experimental measurements and ab initio calculations. This work proposes a potential method to investigate the diffusion mechanism in silicon solar cell.

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OEHME, M., and E. KASPER. "ABRUPT BORON PROFILES BY SILICON-MBE." International Journal of Modern Physics B 16, no. 28n29 (November 20, 2002): 4285–88. http://dx.doi.org/10.1142/s0217979202015273.

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Surface segregation and diffusion are the dominant mechanisms for profile smearing. However in the low temperature regime below 600°C diffusion is negligible. We investigated the dopant profile during silicon molecular beam epitaxy (MBE) in silicon (100). A method for measurement of the adlayer density of segregating dopant atoms is suggested. We utilize the results of this experiment to generate very sharp boron profiles. For the doping we use the pre-build up method with constant boron flux.

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Kara, Gökhan, Gencaga Purcek, and Harun Yanar. "Improvement of wear behaviour of titanium by boriding." Industrial Lubrication and Tribology 69, no. 1 (January 9, 2017): 65–70. http://dx.doi.org/10.1108/ilt-11-2015-0174.

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Purpose The purpose of this paper is to achieve a hard and protective borided layer on commercially pure Ti (grade-2) by applying boriding, and to investigate the changes in its microstructure, hardness, friction and wear behaviors. Design/methodology/approach Pack boriding technique was used to form a hard boron diffusion layer on titanium substrate. A powder mixture of amorphous boron and anhydrous borax was used as a solid-state boriding media, and then the boriding was carried out under inert atmosphere. Findings A thick dual boride layer consisting of a monolithic titanium diboride (TiB2) on the top and titanium monoboride (TiB) whiskers beneath that layer formed at relatively low diffusion temperature under pressured inert argon atmosphere in a boriding media containing boron source and activator. With boriding at specified conditions, very hard (4100 Hv0.01) and thick monolithic TiB2 layer formed on the top-most layer which is required for improved tribological applications. Hardness decreased gradually through the TiB whisker layer and finally reached to the hardness of base material. Originality/value This paper investigates the effects of components of boriding mixture and conditions of thermal treatment on the formation of borided layer and its properties. In previous studies, boriding mixtures containing a boron source, an activator and a filler material was generally used at high temperatures around or above 1,050°C to achieve a thick monolithic layer on the top of the surface of titanium. In the present study, no filler material was used to accelerate the boron diffusion because filler materials may inhibit the diffusion of boron atom through the surface of substrate of titanium. Also, diffusion treatment was carried out under pressurized argon atmosphere at relatively low diffusion temperature to achieve boride layer with the improved hardness and durability.

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Makuch, Natalia, Piotr Dziarski, and Michał Kulka. "Gas Technique of Simultaneous Borocarburizing of Armco Iron Using Trimethyl Borate." Coatings 10, no. 6 (June 14, 2020): 564. http://dx.doi.org/10.3390/coatings10060564.

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The gas boriding process is an appropriate technique used for increasing the hardness and wear resistance of iron and steels. However, the boron halides (e.g., BCl3, BF3) are rarely used as a boron source during gas boriding in industry due to the toxic character of these reagents. The possibility of the use of organic compounds as a boron source in plasma assisted processes was the instigation to determine the possibility of applying these agents for gas boriding. In the present work trimethyl borate was used as an organic boron source. The use of a N2–H2–B(CH3O)3 atmosphere ensured the appropriate conditions for the simultaneous gas borocarburizing of Armco iron. The process was carried out at 1223 K (950 °C) for 2 h. The produced layer consisted of two zones: an outer zone containing a diffusion of boron atoms and an inner zone containing a diffusion of carbon atoms, under the outer zone. Due to the reduction of trimethyl borate with hydrogen, free atoms of carbon were released for the gas atmosphere. Therefore, there existed favorable conditions for carburizing. Unfortunately, the formation of a carburized layer was the reason for the difficult diffusion of boron atoms. As a consequence, the boron diffusion front was hindered, and the outer boride layer was relatively thin (ca. 7.8 µm). The boride layer contained only Fe2B phase, which was characterized by high hardness in the range from 1103 HV0.01 to 1546 HV0.01. The presence of iron borides in the outer layer was also the reason for increased wear resistance in comparison with untreated Armco iron.

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Lebow, Patricia K., Stan T. Lebow, and Steven A. Halverson. "Boron Diffusion in Surface-Treated Framing Lumber." Forest Products Journal 63, no. 7-8 (December 2013): 275–82. http://dx.doi.org/10.13073/fpj-d-12-00098.

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"Diffusion of: Boron." Defect and Diffusion Forum 47 (January 1986): 26–53. http://dx.doi.org/10.4028/www.scientific.net/ddf.47.26.

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Schreutelkamp, R. J., W. X. Lu, F. W. Saris, K. T. F. Janssen, J. J. M. Ottenheim, R. E. Kaim, and J. F. M. Westendorp. "Avoiding Transient Diffusion of Boron in Si(100)." MRS Proceedings 157 (1989). http://dx.doi.org/10.1557/proc-157-691.

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ABSTRACTThe diffusion of boron ions implanted in Si(100) during high temperature treatment has been studied by means of Secondary Ion Mass Spectrometry. The boron ions were implanted at energies of 5 and 10 keV along random direction and along [100]. The implantation dose amounted to 1×1013/cm2. During annealing an enhanced diffusion of boron is observed in the tail region of the implantation profiles. In all cases the enhanced diffusion is completed after Rapid Thermal Annealing at 900°Cfor 10”. The enhanced diffusion is largest for the channeled ion implantations. Channeling analysis shows that the transient diffusion is not correlated with the annihilation of defects near the projected range. Therefore, the observed diffusion tail is attributed to rapidly diffusing interstitial boron. Post-amorphization of boron implanted silicon with Si+ ions is used to prevent transient diffusion. Thus a very sharp pn-junction is obtained at a depth of 03 jim and the effective number of charge carriers equals the implanted dose after annealing at 550°Cfor 5hrs and 1000°Cfor 10”.

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