Dissertations / Theses on the topic 'Boron diffusion'
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Vianez, Basilio Frasco. "Aspects of boron diffusion through hardwoods." Thesis, Bangor University, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.358298.
Full textJacques, Jeannette. "Boron diffusion within amorphous silicon materials." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0012805.
Full textCastro, Susana Patricia. "CHARACTERIZATION OF THE BORON DOPING PROCESSUSING BORON NITRIDE SOLID SOURCE DIFFUSION." NCSU, 1999. http://www.lib.ncsu.edu/theses/available/etd-19990523-142337.
Full textCASTRO, SUSANA PATRICIA. Characterization of the Boron Doping Process UsingBoron Nitride Solid Source DiffusionThe purpose of this research has been to develop an optimum process for the borondoping of implants and polysilicon gates of metal-oxide-semiconductor (MOS) devices.An experimental design was constructed to determine the effects of diffusiontemperature, time, and ambient on characteristics of the doping process. A temperaturerange of 800 to 1000 degrees Celsius was studied with a diffusion time between 10 and60 minutes. Two diffusion ambients were used for doping processes, a pure nitrogenambient and a nitrogen-oxygen gaseous mixture. Device wafers were fabricated, and thetesting of MOS capacitors and van der Pauw test structures was performed to determinethe effect of diffusion conditions on flatband voltage and poly gate doping. Materialscharacterization techniques were used on monitor wafers for each diffusion process todetermine the wafer structure formed for each process and evaluate the effectiveness ofthe deglaze etch. The processes that resulted in the best device characteristics withoutsuffering from significant poly depletion effects and flatband voltage shifts were wafersdoped at 800 degrees Celsius in a pure nitrogen atmosphere for 20 minutes and 45minutes. The presence of oxygen in the atmosphere caused the depletion of boron fromthe Si wafer surface. The formation of the Si-B phase only occurred on devices processedat 1000 degrees Celsius. The deglaze process used in this experiment did not fullyremove this layer, and thus all devices doped at this temperature were seriously degraded.
Slade, Alexander Mason Electrical Engineering UNSW. "Boron tribromide sourced boron diffusions for silicon solar cells." Awarded by:University of New South Wales. Electrical Engineering, 2005. http://handle.unsw.edu.au/1959.4/21850.
Full textCastro, Susana Patricia. "Characterization of the boron doping process using boron nitride solid source diffusion." Raleigh, NC : North Carolina State University, 1999. http://www.lib.ncsu.edu/etd/public/etd-2923142349901421/etd.pdf.
Full textDe, Oliveira Valmir Souza. "Mechanisms of diffusion of boron through wood." Thesis, Bangor University, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.235647.
Full textUppal, Suresh. "Diffusion of boron and silicon in germanium." Thesis, University of Southampton, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.417592.
Full textBerggren, Elin. "Diffusion of Lithium in Boron-doped Diamond Thin Films." Thesis, Uppsala universitet, Molekyl- och kondenserade materiens fysik, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-413090.
Full textGolshani, Fariborz. "Boron doping of diamond powder by enhanced diffusion and forced diffusion : diffusion concentrations, mechanical, chemical and optical properties /." free to MU campus, to others for purchase, 1997. http://wwwlib.umi.com/cr/mo/fullcit?p9842530.
Full textTiwari, Gyanendra P., Ratikanta Mishra, and Radhey Shyam Mehrotra. "Helium migration and precipitation in irradiated and annealed copper boron alloy." Universitätsbibliothek Leipzig, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-184131.
Full textFink, Dietmar, Manfred Müller, Moni Behar, and Ricardo M. Papaleo. "Spatial redistribution of boron implanted into Poly-(Di-n-Hexyl Silane), (PDHSi)." Universitätsbibliothek Leipzig, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-196850.
Full textDe, Souza Maria Merlyne. "Atomic level diffusion mechanisms in silicon." Thesis, University of Cambridge, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.319817.
Full textKham, Man Niang. "Reduced boron diffusion under point defect injection in fluorine implanted silicon." Thesis, University of Southampton, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.443049.
Full textGable, Kevin Andrew. "Boron activation and diffusion during millisecond annealing of ion-implanted silicon." [Gainesville, Fla.] : University of Florida, 2004. http://purl.fcla.edu/fcla/etd/UFE0005042.
Full textTiwari, Gyanendra P., Ratikanta Mishra, and Radhey Shyam Mehrotra. "Helium migration and precipitation in irradiated and annealed copper boron alloy." Diffusion fundamentals 19 (2013) 3, S. 1-17, 2013. https://ul.qucosa.de/id/qucosa%3A13705.
Full textFink, Dietmar, Manfred Müller, Moni Behar, and Ricardo M. Papaleo. "Spatial redistribution of boron implanted into Poly-(Di-n-Hexyl Silane), (PDHSi)." Diffusion fundamentals 2 (2005) 117, S. 1, 2005. https://ul.qucosa.de/id/qucosa%3A14457.
Full textHamilton, Justin J. "Boron activation and diffusion in pre-amorphised silicon and silicon-on-insulator." Thesis, University of Surrey, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.443399.
Full textRobison, Robert Russell. "Simulation of fluorine-diffusion behavior and boron-fluorine co-interaction in silicon." [Gainesville, Fla.] : University of Florida, 2006. http://purl.fcla.edu/fcla/etd/UFE0013790.
Full textDomec, Brennan S. "Development, Characterization, and Resultant Properties of a Carbon, Boron, and Chromium Ternary Diffusion System." Thesis, University of Louisiana at Lafayette, 2017. http://pqdtopen.proquest.com/#viewpdf?dispub=10266264.
Full textIn today’s industry, engineering materials are continuously pushed to the limits. Often, the application only demands high-specification properties in a narrowly-defined region of the material, such as the outermost surface. This, in combination with the economic benefits, makes case hardening an attractive solution to meet industry demands. While case hardening has been in use for decades, applications demanding high hardness, deep case depth, and high corrosion resistance are often under-served by this process. Instead, new solutions are required.
The goal of this study is to develop and characterize a new borochromizing process applied to a pre-carburized AISI 8620 alloy steel. The process was successfully developed using a combination of computational simulations, calculations, and experimental testing. Process kinetics were studied by fitting case depth measurement data to Fick’s Second Law of Diffusion and an Arrhenius equation. Results indicate that the kinetics of the co-diffusion method are unaffected by the addition of chromium to the powder pack. The results also show that significant structural degradation of the case occurs when chromizing is applied sequentially to an existing boronized case. The amount of degradation is proportional to the chromizing parameters.
Microstructural evolution was studied using metallographic methods, simulation and computational calculations, and analytical techniques. While the co-diffusion process failed to enrich the substrate with chromium, significant enrichment is obtained with the sequential diffusion process. The amount of enrichment is directly proportional to the chromizing parameters with higher parameters resulting in more enrichment. The case consists of M7C3 and M23C6 carbides nearest the surface, minor amounts of CrB, and a balance of M2B.
Corrosion resistance was measured with salt spray and electrochemical methods. These methods confirm the benefit of surface enrichment by chromium in the sequential diffusion method with corrosion resistance increasing directly with chromium concentration. The results also confirm the deleterious effect of surface-breaking case defects and the need to reduce or eliminate them.
The best combination of microstructural integrity, mean surface hardness, effective case depth, and corrosion resistance is obtained in samples sequentially boronized and chromized at 870°C for 6hrs. Additional work is required to further optimize process parameters and case properties.
GUILHERME, ENEIDA da G. "Estudo do processo de obtencao da liga magnetica NDsub(15) FEsub(77) Bsub(8) por reducao-difusao (R/D) calciotermica." reponame:Repositório Institucional do IPEN, 1992. http://repositorio.ipen.br:8080/xmlui/handle/123456789/10285.
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Disserta‡ao (Mestrado)
IPEN/D
Instituto de Pesquisas Energeticas e Nucleares - IPEN/CNEN-SP
Ryu, Kyung Sun. "Development of low-cost and high-efficiency commercial size n-type silicon solar cells." Diss., Georgia Institute of Technology, 2015. http://hdl.handle.net/1853/53842.
Full textEl, Mubarek Huda Abdel Wahab Abdel Rahim. "Suppression of boron transient enhanced and thermal diffusion in silicon and silicon germanium by fluorine implantation." Thesis, University of Southampton, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.419196.
Full textDas, Arnab. "Development of high-efficiency boron diffused silicon solar cells." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/44718.
Full textDiebel, Milan. "Application of ab-initio calculations to modeling of nanoscale diffusion and activation in silicon /." Thesis, Connect to this title online; UW restricted, 2004. http://hdl.handle.net/1773/9727.
Full textCamillo-Castillo, Renata A. "Boron activation and diffusion in silicon for varying initial-process conditions during Flash-assist Rapid Thermal Annealing." [Gainesville, Fla.] : University of Florida, 2006. http://purl.fcla.edu/fcla/etd/UFE0013884.
Full textPedersen, Daniel. "Development of a Kinetic Monte Carlo Code." Thesis, Uppsala universitet, Materialteori, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-202711.
Full textPelletier, Bertrand. "Modélisation et simulation numérique de l'exo-diffusion du bore dans les oxydes encapsulés des technologies CMOS déca-nanométriques." Thesis, Aix-Marseille 1, 2011. http://www.theses.fr/2011AIX10060/document.
Full textThis study has focused on the interaction of dielectric stacks nitride/oxide with the boron distribution in the source and drain areas after the activation annealing. The low temperature deposition processes of nitride and oxide layers limit the impact of these deposition steps on the electrical performance of the device. However the thermal budgets of lower deposit also induce a higher concentration of hydrogen. This hydrogen accumulation in the dielectric layer in contact with the source and drain regions increases the boron diffusion into the silicon oxide and causing modification of the boron distribution into the implanted zones and therefore an electrical performance modification of the device. In this work we developed a physical model combining the hydrogen exchange during annealing between the dielectric layers and boron out-diffusion between the substrate and silicon oxide. This model was validated firstly by simulating the profiles of boron after annealing for different deposition conditions nitride and oxide, and also by coupling measurements of mechanical stress with hydrogen thermal desorption spectroscopy (TDS). This research revealed two mechanisms of hydrogen regulation in oxide layer during annealing. First, the role of nitride encapsulation, hydrogen diffusion in nitride layer is lower than in oxide so hydrogen cannot degas out during anneal. The second is the role of nitride as a hydrogen source into the stack
Cockeram, Brian Vern. "The development, growth and oxidation resistance of Boron- and Germanium-Doped Silicide diffusion coatings by Fluoride-Activated pack cementation /." The Ohio State University, 1994. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487859313344332.
Full textNiemkiewicz, John. "A study on the use of removal-diffusion theory to calculate neutron distributions for dose determination in boron neutron capture therapy /." The Ohio State University, 1996. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487934589976468.
Full textCook, Grant O. III. "Joining Polycrystalline Cubic Boron Nitride and Tungsten Carbide by Partial Transient Liquid Phase Bonding." BYU ScholarsArchive, 2010. https://scholarsarchive.byu.edu/etd/2366.
Full textMurphy, John Douglas. "The properties of nitrogen and oxygen in silicon." Thesis, University of Oxford, 2006. http://ora.ox.ac.uk/objects/uuid:d6ff6bba-f9ec-497b-b0f4-2d4162f784cc.
Full textMojrová, Barbora. "Solární články z monokrystalického křemíku typu n s vysokou účinností." Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2019. http://www.nusl.cz/ntk/nusl-408053.
Full textBack, Christophe. "Étude de la cristallisation des verres métalliques Ni₈₁B₁₉ et (FeCr) ₇₇B₂₃ par diffusion neutronique et simulations numériques." Vandoeuvre-les-Nancy, INPL, 1995. http://www.theses.fr/1995INPL109N.
Full textMotte, Vianney. "Comportement de l’hélium implanté dans le carbure de bore B4C." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSE1229/document.
Full textBoron carbide B4C is a ceramic commonly used as a neutron absorber to control the power of nuclear power plants. The neutron absorption reactions, (n,α) type on the boron-10 isotope, lead to the production of large quantities of helium (up to 1022.cm-3). This results to swelling induced by the formation of highly pressurized bubbles, followed by microcracking. Analysis of the literature shows that helium diffusion mechanisms and the early stages of bubble formation are poorly understood. The goal of our work is to study the behaviour of helium in boron carbide, by carrying out a parametric analysis. For this purpose, samples of B4C, sintered from different powders, were implanted in helium with ion accelerators at different concentrations and temperatures, in order to simulate the helium produced in the reactor. The analyses were then mainly based on two characterization techniques: Nuclear Reaction Analysis (NRA), which is an ion beam analysis technique. The 3He(d,4He)1H reaction used allows obtaining helium profiles in the material. The Transmission Electron Microscope (TEM), which allows observation of potential helium clusters in the material. We first demonstrated the influence of the concentration of implanted helium: the higher it is, the higher the density of clusters in the implanted area; then the influence of the implantation temperature: the higher it is, the higher the threshold temperature for cluster nucleation and the lower the density. We have deduced that these differences were due to the influence of the residual damage, which is lower at high temperature. Dual gold and helium implantations confirmed that damage caused by Au ions had a significant effect on cluster nucleation, lowering the temperature threshold of their occurrence and increasing their density. Next, we have highlighted the role of grain boundaries which have proved to be very efficient traps for helium. We have demonstrated that helium does not diffuse into these grain boundaries at temperatures up to 1200°C. Finally, the broadening of the helium profiles after heat treatments, in the temperature range 600-800°C, allowed us to determine an apparent diffusion coefficient of helium in B4C, still unknown in the literature: D = D0.exp (-Ea/kT), with D0 = 6.03x10-3 x/ 2.5 cm2.s-1 and Ea = 2.03 ± 0.18 eV. This work allowed us to better understand the behaviour of helium in boron carbide, which will be used in power control devices and neutron protections for the ASTRID reactor, a French sodium fast-neutron reactor project. The results thus allow obtaining useful indications for the design of the neutron absorber elements of the reactor
Nielsen, Jon F. "Energetically and Kinetically Driven Step Formation and Evolution on Silicon Surfaces." The Ohio State University, 2001. http://rave.ohiolink.edu/etdc/view?acc_num=osu998579834.
Full textFrantík, Ondřej. "Vysokoteplotní procesy ve výrobě křemíkových fotovoltaických článků." Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2014. http://www.nusl.cz/ntk/nusl-233622.
Full textSkinner, Andrew J. "Hydrogenic spin quantum computing in silicon and damping and diffusion in a chain-boson model." College Park, Md. : University of Maryland, 2006. http://hdl.handle.net/1903/3887.
Full textThesis research directed by: Physics. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
Le, Parc Rozenn. "Diffusion de rayonnements et relaxation structurale dans les verres de silice et préformes de fibres optiques." Lyon 1, 2002. http://www.theses.fr/2002LYO10109.
Full textRuta, Béatrice. "Les propriétés vibrationnelles des verres : une étude expérimentale dans la région de transition entre le régime microscopique et macroscopique." Grenoble, 2010. http://www.theses.fr/2010GRENY034.
Full textOne of the most challenging issue in condensed matter physics concerns the understanding of the vibrational properties of glasses. In particular, an anomaly present in the vibrational density of states (VDOS) at energies of few meV has attracted much interest due to its universal occurrence in glasses. This anomaly, called ”boson peak” (BP), appears as a peak in the reduced VDOS over the Debye, elastic continuum prediction in an energy range where the Debye model still works reasonably well for the corresponding crystals. In this PhD work we present the results of an experimental study of the vibrational dynamics in glassy sorbitol and sulfur by means of inelastic scattering of light, x-ray and neutron. In the case of sorbitol, these results show that the boson peak is clearly related to anomalies observed in the acoustic dispersion curve in the mesoscopic wavenumber range of few nm−1. Moreover, the study of the temperature dependence of these properties shows that this connection is kept under temperature changes. Finally, the behavior of the high frequency modes can be used to quantitatively account for the BP, suggesting a strong connection between acoustic properties in the mesoscopic range and boson peak. This behavior seems to be universal in glasses. In the case of glassy sulfur the BP is located at energies outside the window which can be probed by IXS and it is not possible experimentally to investigate the character of the corresponding collective excitations
Simon, Guilhem. "Vibrations des verres d'oxydes observées par diffusion hyper-Raman." Phd thesis, Université Montpellier II - Sciences et Techniques du Languedoc, 2007. http://tel.archives-ouvertes.fr/tel-00374838.
Full textAlam, Syed Bahauddin. "The design of reactor cores for civil nuclear marine propulsion." Thesis, University of Cambridge, 2018. https://www.repository.cam.ac.uk/handle/1810/275650.
Full textPallier, Camille. "Evolution structurale des céramiques (Si)-B-C sous sollicitations thermomécaniques." Thesis, Bordeaux 1, 2012. http://www.theses.fr/2012BOR14615/document.
Full textSelf-healing matrices are composed of SiC, B-C and Si-B-C multilayers deposited by chemical vapour deposition (CVD). The boron-rich layers (Si)-B-C are amorphous in their as-deposited state but crystallize at high temperature (T ≥ 1000 °C). Various analyses (XRD, Raman spectroscopy, NMR, neutron diffraction, XANES) were used to characterize the local structure of the as-processed and heat-treated ceramics. The local structure of heat-treated ceramics was also confirmed by molecular dynamic ab initio simulations. The structure consists of icosahedral units as in B4C but faulted and connected with each other through tetrahedral CB4-XCX and trigonal BC3 sites. In Si-B-C ceramics, the same amorphous phase forms a continuum embedding SiC clusters. The structural evolution of the ceramics in inert atmosphere were studied as a function of temperature (1100°C ≤ T ≤ 1400 °C) and time (t ≤ 1 h). The metastability of the materials leads to fast kinetics of reorganization. When T and t increase, one observes successively the formation free-sp2 carbon, the crystallization of B4C and, in Si-B-C ceramics, the coarsening of the SiC nanocrystallites. The high temperature mechanical properties have also been assessed by tensile tests on Cf/(Si)-B-Cm microcomposites. The materials undergo a complex transient behaviour which is strongly temperature dependent due to the structural changes
Monaco, Andrea. "Etude de la dynamique vibrationelle des verres." Phd thesis, Université Joseph Fourier (Grenoble), 2006. http://tel.archives-ouvertes.fr/tel-00131536.
Full textBerthet, Remy. "INTERACTION SON-ÉCOULEMENT." Phd thesis, Ecole normale supérieure de lyon - ENS LYON, 2001. http://tel.archives-ouvertes.fr/tel-00003781.
Full textecoulement. Nous avons developpe pour cela
deux outils d'analyse complementaires: une methode analytique basee
sur le developpement en ondes partielles de l'onde sonore, et une simulation
numerique directe avec conditions aux limites ouvertes d'ecoulements
compressibles, isothermes et non dissipatifs.
Nous sommes ainsi en mesure de quantifier les approximations de champ lointain
et de Born, usuellement employees dans la modelisation de l'interaction
son-ecoulement. Nous presentons ensuite les ecarts a l'approximation
de Born pour un ecoulement a circulation nulle et l'importance de la
refraction du son par l'ecoulement dans le processus de diffusion. Nous
discuterons egalement dans quelle mesure la vorticite de l'ecoulement est
la source de diffusion predominante. Enfin, nous montrons que les outils developpes permettent l'analyse de situations experimentales de diffusion de son par des
ecoulements turbulents.
Kaukola, T. (Tuula). "Perinatal brain damage in very preterm infants:prenatal inflammation and neurologic outcome in children born term and preterm." Doctoral thesis, University of Oulu, 2005. http://urn.fi/urn:isbn:9514278402.
Full textTiivistelmä Huolimatta vastasyntyneisyyskauden parantuneista hoitotuloksista ja että yhä useampi hyvin ennenaikaisena syntynyt lapsi jää eloon, heidän neurologisen vammautuneisuuden ilmaantuvuus on edelleen korkea. Monien aivojen kuvantamislöydösten, kuten valkean aineen vaurion, syntymekanismit tunnetaan huonosti. Aivojen vaurioitumiselle altistavat tekijät eroavat täysiaikaisena ja ennenaikaisena syntyneillä lapsilla. Tarvitaan myös aiempaa yksityiskohtaisempaa tietoa aivojen kuvantamislöydösten merkityksestä lasten vastasyntyneisyyskauden jälkeiseen kehitykseen. Tässä tutkimuksessa selvitettiin raskauden- ja syntymänaikaisia tekijöitä, jotka vaikuttavat aivojen vaurioitumiseen hyvin ennenaikaisena syntyneillä lapsilla sekä näiden tekijöiden merkitystä lasten neurologiseen kehitykseen. Tarkastelimme myös napaveren seerumin välittäjäaineiden, sytokiinien, eroavuuksia täysiaikaisena ja ennenaikaisena syntyneillä CP-lapsilla. Lisäksi selvitimme diffuusiomagneettitutkimus- ja aivorunkoherätevastelöydösten sekä neurologisen kehityksen välisiä yhteyksiä. Tämän tutkimuksen mukaan kohdunsisäinen tulehdus ja istukan vajaatoiminta yhtä aikaa esiintyessään ovat poikkeavan neurologisen kehityksen itsenäisiä riskitekijöitä lapsilla 2 vuoden korjatussa iässä tutkittuna. Valkoisen aivoaineen vaurio edelleen lisäsi näiden lasten huonon neurologisen kehityksen ennustetta. Raskauden kestosta riippumatta, sikiön tulehdusvastetta kuvaavat napaveren akuutin vaiheen tulehdusvälittäjäaineet (IL-1α, IL-1β, IL-6, IL-8, TNF- α) eivät vaikuttaneet lapsen neurologiseen kehitykseen. Sen sijaan, CP-lasten napaverestä löytyi erityinen joukko ei-akuutin vaiheen välittäjäaineita. Nämä valkuaisaineet erosivat toisistaan täysiaikaisena ja ennenaikaisena syntyneillä CP-lapsilla. Raskauden- ja syntymänaikaiset verenkierron häiriöt vaikuttivat hyvin ennenaikaisena syntyneiden lasten myöhempään kehitykseen. Vaikeassa istukan vajaatoiminassa sikiön sydämen toiminnan heikkeneminen liittyi lapsen suboptimaaliin neurologiseen kehitykseen 1 vuoden korjatussa iässä tutkittuna. Lisäksi useat syntymänjälkeiset keuhkojen ja verenkierron tilaa kuvaavat kliiniset tekijät liittyivät lapsen poikkeavaan neurologiseen kehitykseen 2 vuoden korjatussa iässä tutkittuna. Tutkimuksemme mukaan, veden diffuusiota määrällisesti kuvaava diffuusiokerroin, ADC, aivosillasta mitattuna, liittyi impulssien johtumisnopeutueen kuuloradastossa. Lisäksi korkea ADC-arvo aivojen sepelviuhkassa liittyi karkean motoriikan ja silmä-käsi-yhteistyötaitojen huonoon kehitykseen 2 vuoden korjatussa iässä tutkittuna. Sekä raskauden- että syntymänaikaiset tekijät vaikuttavat hyvin ennenaikaisena syntyneiden lasten myöhempään kehitykseen. Yksittäinen sikiön tulehdusvaste ei ennakoi lapsen neurologista kehitystä. Tiettyjen aivoalueiden diffuusiokuvantamislöydökset ennustavat lapsen poikkeavaa neurologista kehitystä
Filip, Lovemalm, and Music Muhamed. "Spridningen av innovationer : En studie på små innovativa verksamheter på lokal och global nivå." Thesis, Mälardalens högskola, Akademin för innovation, design och teknik, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:mdh:diva-27452.
Full textDos, Reis Daniel. "Évaluation électromagnétique en régime diffusif de défauts et objets 3D enfouis : du modèle d'interaction à l'inversion de données." Paris 7, 2001. http://www.theses.fr/2001PA077186.
Full textTschümperlé, Denis. "Étude numérique de l'interaction tourbillons-onde acoustique." Le Havre, 2000. http://www.theses.fr/2000LEHA0002.
Full textT'Jampens, BenoÎt. "Développement de méthodes asymptotiques pour l'étude des interactions entre atomes froids ; détermination de longueurs de diffusion du sodium et du césium." Phd thesis, Université Paris Sud - Paris XI, 2002. http://tel.archives-ouvertes.fr/tel-00011676.
Full textTschümperlé, Denis. "Etude numérique de l'interaction tourbillons-ondes acoustiques." Phd thesis, Université du Havre, 2000. http://tel.archives-ouvertes.fr/tel-00004646.
Full text