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Journal articles on the topic 'Bonding wire'

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Author: Grafiati

Published: 14 March 2023

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1

Ko, Kuk Won, Dong Hyun Kim, Jiyeon Lee, and Sangjoon Lee. "3D Measurement System of Wire for Automatic Pull Test of Wire Bonding." Journal of Institute of Control, Robotics and Systems 21, no. 12 (December 1, 2015): 1130–35. http://dx.doi.org/10.5302/j.icros.2015.15.0131.

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2

Shirakawa, Shinji. "Bonding Wire." Journal of SHM 9, no. 4 (1993): 30–38. http://dx.doi.org/10.5104/jiep1993.9.4_30.

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3

Levine, Lee. "Wire Bonding." EDFA Technical Articles 18, no. 1 (February 1, 2016): 22–28. http://dx.doi.org/10.31399/asm.edfa.2016-1.p022.

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4

Zhong, Z. W. "Wire bonding using insulated wire and new challenges in wire bonding." Microelectronics International 25, no. 2 (April 18, 2008): 9–14. http://dx.doi.org/10.1108/13565360810875958.

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5

Zhong, Z. W. "Wire bonding using copper wire." Microelectronics International 26, no. 1 (January 23, 2009): 10–16. http://dx.doi.org/10.1108/13565360910923115.

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6

Qin, Ivy, Aashish Shah, Hui Xu, Bob Chylak, and Nelson Wong. "Advances in Wire Bonding Technology for Different Bonding Wire Material." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000406–12. http://dx.doi.org/10.4071/isom-2015-wp33.

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With all the advances in 2.5D and 3D packaging, wire bonding is still the most popular interconnect technology and the workhorse of the industry. Wire bonding technology has been the lower cost solution comparing to flip chip. Wire bonding package cost is much reduced with the introduction of Copper wire bonding. Technology development and innovation in wire bonding provides new packaging solutions that improves performance and reduces cost. This paper reviews the recent innovations in ball bonding technology to provide optimized ball bonding solutions targeted for different bonding wire material. It examines the different challenges for the alternative wire types including Cu wire, Pd coated, and AuPd coated Cu wire and Ag Alloy wire. We will discuss key development in ball bonding equipment, process and material to overcome the challenges and provide robust low cost solutions. The advantages of each wire type are outlined, and guidelines to select the right bonding wire type per application requirements are provided.

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7

Zhou, Hongliang, Yingchong Zhang, Jun Cao, Chenghao Su, Chong Li, Andong Chang, and Bin An. "Research Progress on Bonding Wire for Microelectronic Packaging." Micromachines 14, no. 2 (February 11, 2023): 432. http://dx.doi.org/10.3390/mi14020432.

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Wire bonding is still the most popular chip interconnect technology in microelectronic packaging and will not be replaced by other interconnect methods for a long time in the future. Au bonding wire has been a mainstream semiconductor packaging material for many decades due to its unique chemical stability, reliable manufacturing, and operation properties. However, the drastic increasing price of Au bonding wire has motivated the industry to search for alternate bonding materials for use in microelectronic packaging such as Cu and Ag bonding wires. The main benefits of using Cu bonding wire over Au bonding wire are lower material cost, higher electrical and thermal conductivity that enables smaller diameter Cu bonding wire to carry identical current as an Au bonding wire without overheating, and lower reaction rates between Cu and Al that serve to improve the reliability performance in long periods of high temperature storage conditions. However, the high hardness, easy oxidation, and complex bonding process of Cu bonding wire make it not the best alternative for Au bonding wire. Therefore, Ag bonding wire as a new alternative with potential application comes to the packaging market; it has higher thermal conductivity and lower electric resistivity in comparison with Cu bonding wire, which makes it a good candidate for power electronics, and higher elastic modulus and hardness than Au bonding wire, but lower than Cu bonding wire, which makes it easier to bond. This paper begins with a brief introduction about the developing history of bonding wires. Next, manufacturability and reliability of Au, Cu, and Ag bonding wires are introduced. Furthermore, general comparisons on basic performance and applications between the three types of bonding wires are discussed. In the end, developing trends of bonding wire are provided. Hopefully, this review can be regarded as a useful complement to other reviews on wire bonding technology and applications.

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8

Won, Rachel. "Wire-bonding assembly." Nature Photonics 12, no. 9 (August 29, 2018): 500. http://dx.doi.org/10.1038/s41566-018-0251-z.

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9

Mayer, Michael, and Yi-Shao Lai. "Copper Wire Bonding." Microelectronics Reliability 51, no. 1 (January 2011): 1–2. http://dx.doi.org/10.1016/j.microrel.2010.12.004.

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10

Pan, Ming Qiang, Tao Chen, Li Guo Chen, and Li Ning Sun. "Analysis of Broken Wires during Gold Wire Bonding Process." Key Engineering Materials 503 (February 2012): 298–302. http://dx.doi.org/10.4028/www.scientific.net/kem.503.298.

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Wire bonding is one of the critical technologies of devices production, assembly and packaging in the microelectronic and MEMS field. During bonding process, the gold wires break easily, because the wires are repeatedly operated with high-speed. Therefore, the experiments were performed to analyze bonding process and the reason causing wire break. The results show that it is critical to prevent the broken wire to control the pressure wire pressure, the speed and angle of the pulling wire structure, the clamp gap, the capillary tip gap, and discharging energy in bonding process. the broken wire doesn’t occurs when the pressure wire pressure, the speed of the pulling wire structure, the angle of the pulling wire structure, the clamp gap, the capillary tip gap, the time and the current are 3-5g, 5rad/s and 10rad, 0.1-0.3mm, 1mm, 35ms and 10mA , respectively.

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11

Levine, Lee. "Wire Bonding: The Ultrasonic Bonding Mechanism." International Symposium on Microelectronics 2020, no. 1 (September 1, 2020): 000230–34. http://dx.doi.org/10.4071/2380-4505-2020.1.000230.

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Abstract Wire bonding is a welding process. During both ball and wedge bonding, wire and bond pad are massively deformed between the bond tool and the anvil of the bond pad or substrate. The dominant variables affecting deformation are ultrasonic energy, temperature, bond force and bond time. Deformation exposes new surface material that is clean and has not been exposed to atmospheric contamination and oxidation. As the new wire and bond pad surfaces mix, they form diffusion couples that grow and transform into the intermetallic weld nugget. The initial mixing is not at equilibrium in that it does not initially form the compounds described by the equilibrium phase diagram, but temperature and time very quickly allows diffusion to relax the initial mixture into the equilibrium phase diagram compounds. This paper will discuss the mechanisms behind the formation of ball and wedge bonds.

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12

Crockett, William G. "Critical Barriers Associated with Copper Wire." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000394–98. http://dx.doi.org/10.4071/isom-2015-wp31.

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Since around 2008, the shift from Gold (Au) bonding wire to Copper (Cu) bonding wire has been taking place, full scale, with the aim of reducing costs. When compared with Au, Cu wire presents challenges in reliability and repeatable bonding characteristics in terms of chemical stability, which is required in high reliability applications. Therefore Cu wire adoption in automotive and industrial semiconductors has been limited. Conventionally the market for Cu bonding wires has been divided into two types: bare Cu wires (high purity) and Palladium coated copper (PCC) bonding wires. These wires have yet to satisfy the required characteristics for high reliability products such as industrial and automotive electronics. A new breed of alternative bonding wires has been developed to offer performance advantages for high reliability applications compared to bare copper wire and PCC wire. Cu alloy wire and Ag alloy wires continue their market introduction for advanced bonding applications, where bare Cu and PCC wires have known limitations.

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13

Lee, J., Michael Mayer, Y. Zhou, S. J. Hong, and S. M. Lee. "Tail Breaking Force in Thermosonic Wire Bonding with Novel Bonding Wires." Materials Science Forum 580-582 (June 2008): 201–4. http://dx.doi.org/10.4028/www.scientific.net/msf.580-582.201.

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Tail breaking forces (TBFs) are measured for various process conditions to understand phenomena such as short tail formation. TBFs obtained with several Cu wires are compared to find the most suitable Cu wire type that improves consistent tail formation. In situ online TBF measurement method is developed. The highest TBF obtained is 61.59 + 9.10mN. The highest Cpk value obtained is 2.97 + 0.33 when lower specification limit of 10 mN is assumed.

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14

Murali, S., Tark Yong Deok, B. Senthilkumar, and Zhang Xi. "Advancement in Thermosonic Bonding Wire." International Symposium on Microelectronics 2014, no. 1 (October 1, 2014): 000278–82. http://dx.doi.org/10.4071/isom-tp42.

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Coated copper (Cu) and alloyed silver (Ag) wires are the new developments in bonding wire sector and this paper discusses on its bonding performances. Palladium (Pd) coated Cu wire replaces rapidly with Au wire. A thin gold (Au) coating over Pd coated Cu wire revealed wider 2nd bond process window and superior 2nd bond bondability, termed as Au Flash Pd Coated Cu Wire (AFPC). The free air ball (FAB) formation, looping, 1st bond and reliability performance of the AFPC wire satisfies the basic requirements. The benefits of doped/alloyed Cu wire are also presented. Good reflectance properties of Ag wire replaces with Au wire in LED sector. Moreover, soft nature of Ag wire and its FAB near to Au, turn the focus to Ag as a potential bonding wire. Detailed examination on alloying additions, Ag electro migration, reliability, bondability, FAB formation, etc., are currently examined and discussed. During bonding, purging with forming gas is a common practice irrespective of the wires used (bare/alloyed/coated Cu or Ag wires).

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15

ONODERA, Masanori, Yasuhiro SHINMA, Kouichi MEGURO, Junji TANAKA, and Junichi KASAI. "Wire Bonding Using Pd Plated Cu Wire." Journal of Japan Institute of Electronics Packaging 11, no. 6 (2008): 444–50. http://dx.doi.org/10.5104/jiep.11.444.

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16

Hossein Akbari, Schlumberger. "Wire-Bonding Reliability Evaluationa." International Symposium on Microelectronics 2020, no. 1 (September 1, 2020): 000242–45. http://dx.doi.org/10.4071/2380-4505-2020.1.000242.

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Abstract In microelectronic devices, wire bonding is the most common first-level interconnection method between die and lead. Failure of wire bonding causes component failure. Component failure may lead to system or sub-system failures, which often have very expensive consequences. Such failures are even more severe in the harsh operating conditions of the Oil and Gas industry, where services such as rig charge are extremely expensive. We have developed a robustness-evaluation method for microelectronic components using construction analysis.

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17

Lee, Baik-Woo, Chang-Sik Kim, Changmo Jeong, Younghun Byun, Jeong-Won Yoon, Che-Heung Kim, Seong Woon Booh, and U.-in Chung. "Cu Heavy Wirebonding for High Power Device Interconnection." International Symposium on Microelectronics 2013, no. 1 (January 1, 2013): 000318–23. http://dx.doi.org/10.4071/isom-2013-tp43.

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To replace conventional Al heavy wire bonding in interconnecting power devices, we have explored the use of Cu heavy wire bonding, which offers superior electrical, mechanical, and thermal properties compared to Al wires that leads to better interconnection reliability. Chip pad metallizations that are strong enough to support Cu wires firmly against chip pads and endure high bonding parameters were first evaluated by 3D finite element modeling (FEM) of the Cu heavy wire bonding process. The FEM results indicated that an electroless plated Ni layer may be used as the primary candidate for the pad metallization of Cu heavy wire bonding because it enables the reinforcement of standard Al pads in power devices and allows for metallurgical interaction with Cu wires. Further, the deposition of the Ni layer entailed a simple protocol. The three major bonding parameters including force, ultrasonic energy, and time were optimized to achieve successful wire bonding of 300-μm-thick Cu wires to pads strengthened with Ni layers in power devices. Microstructures and compositions of the bonded interface were analyzed by transmission electron microscopy, which provided insight into the bonding characteristics between the Cu wires and the Ni pads. Reliability tests of the bonding were also carried out by the thermal shock test and pressure cooker test.

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18

Zhong, Z. W. "Overview of wire bonding using copper wire or insulated wire." Microelectronics Reliability 51, no. 1 (January 2011): 4–12. http://dx.doi.org/10.1016/j.microrel.2010.06.003.

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19

Gao, Hongtao, Jun Lu, Richard Lu, Wei Xin, Xiaojing Xu, and Hamza Yilmaz. "Reliability Study of Silver, Copper and Gold Wire Bonding on IC Device." International Symposium on Microelectronics 2014, no. 1 (October 1, 2014): 000850–55. http://dx.doi.org/10.4071/isom-thp33.

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Copper wire bonding in IC packages is not always suitable for devices with active circuit under bonding pad because higher bonding power required for copper wire bonding may cause top aluminum metal splash and mechanically impact the circuit underneath. Silver wire is an alternative solution to this problem based on its physical properties and lower cost compared to gold wire. Ag88%Au8.5%Pd2.5%X1% and Ag95%Au1.5%Pd2.5%X1% alloyed silver wires are used in the study to compare with copper and gold wires of 99.99% in purity. As bonding power plays a dominating role in wire bonding, we focused on the effects of silver, copper and gold bonding wires with different bonding power on the top aluminum metal splash of power device by Optical Microscope(OM) and Scanning Electron Microscope(SEM). The ball shear strength of the bonding wires with different bonding power in samples without mold compound encapsulation was investigated before and after 24, 48, 96 and 192 hours of pressure cooker test (PCT). The intermetallic compound (IMC) formed between silver and aluminum was confirmed by focus ion beam (FIB) and transmission electron microscope (TEM). Although the top surface of the silicon device shows no significant difference after aluminum layer removal for all three wire types, the severity level of vertical deformation and side splash of aluminum layer due to copper wire bonding is much more than silver or gold wire using same amount of bonding power. Ball shear strength of non-encapsulated silver wire decreases dramatically after PCT aging compared with copper wire or gold wire and some samples show zero shear strength after PCT 96 hours and PCT 192 hours for silver wires doped with Pd/Au. Furthermore, larger bonding power induces higher ball shear strength. The major IMC compositions between silver and aluminum are Ag3Al and Ag2Al. A thermo dynamic model was built to explain why silver wire is prone to corrosion compared with copper wire by humidity although copper is easier to be ionized than silver. No electrical test was performed as the samples cannot be tested without package encapsulation and singulation. Furthermore, silver wire samples in SO8 package with mold compound encapsulation were subjected to highly accelerated stress test (HAST), PCT, temperature cycle test (TCT) after MSL1 preconditioning test as well as high temperature operation life test (HTOL) according to JEDEC procedures. The encapsulated samples using either Ag 88wt% or Ag95wt% alloys all passed MSL1 and PCT/HAST/TCT/HTOL. Drain to source on-resistance (Rdson) of the device including package parasitics was measured and it has no significant difference between silver wire and gold wire. The results from this study shows promising data using silver alloy wires but care should be taken to further understand the degradation of silver-aluminum interface under severe humidity condition. Using other metallization on silicon top surface such as NiAu or CuAu can significantly alleviate the interface problem related to AgAl.

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20

Goh, K. S., and Z. W. Zhong. "Two capillary solutions for ultra-fine-pitch wire bonding and insulated wire bonding." Microelectronic Engineering 84, no. 2 (February 2007): 362–67. http://dx.doi.org/10.1016/j.mee.2006.11.002.

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21

Qin, Ivy, Hui Xu, Cuong Huynh, Bob Chylak, Hidenori Abe, Dongchul Kang, Yoshinori Endo, Masahiko Osaka, and Shinya Nakamura. "Fine Pitch Cu Wire Bonding Capability – Process Optimization and Reliability Study." International Symposium on Microelectronics 2014, no. 1 (October 1, 2014): 000283–88. http://dx.doi.org/10.4071/isom-tp43.

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Wire bonding has been around for over 70 years and it is still growing. The most recent advances in wire bonding are the wide proliferation of fine pitch Cu wire bonded applications and the development of fine pitch Cu capability extending to the newest technology nodes. Around 2008, fine pitch Cu wire bonding started to take off driven by the skyrocketing Au price. Since then, Cu wire bonding capability has improved dramatically so that today's advanced technology devices such as 28nm and 20nm nodes are being bonded with Cu wire including Pd coated and AuPd coated Cu wire. It turns out that not only is Cu wire cheaper, but it is more suitable for high I/O counts, and fine pitch advanced node applications due to its better electrical and mechanical properties. This paper examines the most advanced Cu wire bonding capability using a Cu optimized process called ProCuTM process. 40um pitch and 35um pitch capability are demonstrated using this new ProCu process. Process responses such as process bonding windows, intermetallic coverage (IMC), and free air ball size control are studied in detail. The ProCu process achieved fine pitch capability for 40um as a robust production process and it also shows that 35um pitch with 13um (0.5mil) wire is a possibility using the latest technology. The JEDEC Reliability test has been a challenge for Cu wire bonding especially for fine pitch applications. As part of this paper, we also examined reliability aspects of fine pitch Cu wire bonding. TEM analysis was used to understand the major factors that affect Cu wire bonding reliability.

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22

Ohneck, James A. "Challenges of Wire Bonding In High Value and High Performance Medical Devices." International Symposium on Microelectronics 2010, no. 1 (January 1, 2010): 000470–73. http://dx.doi.org/10.4071/isom-2010-wa4-paper2.

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Wire bonding is a fairly mature technology that has been used in medical implantable products for over twenty years. Today however, its relevance continues to grow as the size of die continues to get smaller. Size, weight and volume are paramount when developing and manufacturing an implantable medical device, which often needs to perform a specific function such as, monitoring or adjusting parameters of the device itself, monitoring patient data or communicating data from the device to the healthcare professional. Wire bonding can be the answer to addressing many of the requirements mentioned above. This paper will review the current status of the use of gold ball wire bonding and its relevance to the medical device industry as well as discuss how advancements in wire bonding processes benefit today's implantable products. Wire bond interconnections can be made using gold, aluminum and copper wires. They each have different bonding characteristics and therefore require different application methods and equipment. The advantages and characteristics of gold ball wire bonding will be reviewed as this process relates to High Value Medical Devices. Achieving high yields can also be a challenge with any wire bonding processes. Today's smaller die and pads require smaller gage wires. Typical production requirements are .8 – 1.2 mil wire and 4X4 pads. The demand to still go smaller requires continual adaptations and ingenuity as wire thicknesses are being pushed to .5 mils and below. Bond pull testing at the beginning, mid and end of production runs becomes important to verify integrity of the wire bonds with such small wire gages. The complexities involved in wire bonding can lead to increased cost as well. To address this, a single process procedure is being adopted by many, which eliminates pattern plating and saves time and money. This new process will also be explained and reviewed.

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23

Tey, Sock Chien, Kok Tee Lau, Mohd Hafizul Mohamad Noor, Yon Loong Tham, and Mohd Edeerozey Abd Manaf. "Stitch Bonding Strength of Cu Wire on AuAg/Pd/Ni Preplated Cu Leadframes: Influence of AuAg Thickness." Applied Mechanics and Materials 761 (May 2015): 364–68. http://dx.doi.org/10.4028/www.scientific.net/amm.761.364.

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Copper (Cu) wire bonding on the pre-plated leadframes with Ni/Pd/AuAg plating has been applied extensively in the semiconductor industry for the interconnection of integrated-circuit (IC) packaging due to the lower material cost of Cu and its excellent electrical properties. Furthermore, the Cu wire bonding on the preplated leadframe has advantages, such as the tin whisker prevention and the robust package for automotive application. Nevertheless, a stitch bondability of Cu wire-preplated leadframe is facing several challenges, such as the Cu oxidation, the high hardness of Cu wire and the very thin AuAg plating on the leadframes. This paper discusses the effect of AuAg plating thickness in roughened pre-plated leadframe on the stitch bonding of Cu wires with the leadframe. The stitch bonding integrity was assessed using Dage 4000 shear/pull tool at a key wire bond responses of stitch pull at time zero (T0). Results show that the stitch pull strength of the Cu-leadframe stitch bonding increases with the increase thickness of AuAg layer. FESEM images of the stitch bonding between the Cu wires and the pre-plated leadframes of different AuAg plating thickness did not show any defect in microstructures, thus it suggests that the bonding property is determined by diffusion mechanism at the Cu wire/AuAg stitch bonding interface. Finally, a brief discussion is provided on the stitch bondability of high performance Au-flashed palladium-coated copper wires on the pre-plated leadframe with different AuAg thickness.

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24

Al-Emran, Sulaiman, and Rakan Barakati. "A Method for Stabilizing a Lingual Fixed Retainer in Place Prior to Bonding." Journal of Contemporary Dental Practice 8, no. 7 (2007): 108–13. http://dx.doi.org/10.5005/jcdp-8-7-108.

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Abstract Aim The objective of this article is to present a simple technique for stabilizing a lingual fixed retainer wire in place with good adaptation to the teeth surfaces and checking for occlusal interferences prior to the bonding procedure. Background Bonding of an upper or lower fixed lingual retainer using stainless steel wires of different sizes and shapes is a common orthodontic procedure. The retainer can be constructed in a dental laboratory, made at chair side, or it can be purchased in prefabricated form. All three ways of creating a fixed retainer are acceptable. However, the method of holding the retainer wire in place adjacent to the lingual surfaces of the teeth before proceeding with the bonding process remains a problem for some practitioners. Report The lingual fixed retainer was fabricated using three pieces of .010” steel ligature wire which were twisted into a single strand wire. Another four to five 0.010” pieces of steel ligature wires were twisted in the same way to serve as an anchor wire from the labial side of the teeth. The retainer wire was bonded using the foible composite. Summary The technique presented here for stabilizing the retainer wire prior to bonding provides good stabilization, adaptation, and proper positioning of the retainer wire while eliminating contamination of etched surfaces which might arise during wire positioning before bonding. This technique also allows the clinician the opportunity to check the occlusion and adjust the retainer wire to avoid occlusal interference prior to bonding maxillary retainers. This same clinical strategy can be used to stabilize wires for splinting periodontally affected teeth and traumatized teeth. Citation Al-Emran S, Barakati R. A Method for Stabilizing a Lingual Fixed Retainer in Place Prior to Bonding. J Contemp Dent Pract 2007 November; (8)7:108-113.

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25

Zhong, Zhao. "Recent Developments in Wire Bonding." Recent Patents on Engineering 1, no. 3 (November 1, 2007): 238–43. http://dx.doi.org/10.2174/187221207782411610.

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26

Miura, Hiroshi. "Technology of Wire Ball Bonding." Journal of SHM 12, no. 2 (1996): 9–13. http://dx.doi.org/10.5104/jiep1993.12.2_9.

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27

Zulkifli, Muhammad Nubli, Azman Jalar, Shahrum Abdullah, and Norinsan Kamil Othman. "Nanoindentation Stereometry of Wire Bonding." Advanced Science Letters 13, no. 1 (June 30, 2012): 474–77. http://dx.doi.org/10.1166/asl.2012.3935.

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28

Otter, C. C., S. B. Dunkerton, and N. R. Stockham. "Wire Bonding For Microelectronic Interconnection." Materials Technology 20, no. 2 (January 2005): 79–85. http://dx.doi.org/10.1080/10667857.2005.11753115.

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29

Fitzgerald, Richard J. "Ultrasound’s role in wire bonding." Physics Today 62, no. 1 (January 2009): 16. http://dx.doi.org/10.1063/1.4796957.

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30

Zhong, Z. W. "Wire bonding of low‐kdevices." Microelectronics International 25, no. 3 (July 25, 2008): 19–25. http://dx.doi.org/10.1108/13565360810889584.

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31

Kim, Mi-Song, Won Sik Hong, Sang Yeop Kim, Sung Min Jeon, and Jeong Tak Moon. "Ultrasonic Bonding Interface Degradation Characteristics of Gold-Coated Silver Wire for Semiconductor Packaging." Journal of Welding and Joining 39, no. 4 (August 30, 2021): 343–48. http://dx.doi.org/10.5781/jwj.2021.39.4.1.

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Gold-coated silver wire was developed to alleviate the high cost of Au wire used in semiconductor packaging. Ball-bonding and stitch-bonding techniques were used to fabricate the dummy packaging material, comprising 97.3 % Ag, 97.3% Au-Coated Ag, and 99.99 %Au wires. The wire ball shear test (BST), the wire ball pull test (BPT), and the microstructural attributes of the ultrasonic bonding interfaces were compared with the initial properties, both before and after the highly accelerated stress test (HAST), conducted at 130 ℃ and 85% relative humidity (RH). The initial bonding strength for all the wire variants was ?23~24 gf. Following the HAST, the bonding strength of the Ag wire, the Au-coated Ag wire, and the Au wire decreased by approximately 75 %, 47 %, and 17 %, respectively. The microstructure analysis revealed that cracks developed and propagated at the ends of the interface and that the Au-rich Au-Al intermetallic compound (IMC) inhibited the propagation of the crack at the ACA/Au wire interface. Additionally, it was discovered that the presence of the Ag-Au-Al IMC at the interface of the ACA wire reduced Kirkendall voids, which act as a barrier to Au-Al interdiffusion.

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32

Charles, Harry K. "The Microelectronic Wire Bond: Past, Present, and Future." International Symposium on Microelectronics 2010, no. 1 (January 1, 2010): 000462–69. http://dx.doi.org/10.4071/isom-2010-wa4-paper1.

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Since its very inception, the microelectronic wire bond has been the dominate form of first-level interconnection (chip to package or substrate). Wire bonds account for over 80% of first-level chip interconnections made by the microelectronic industry each year. Wire bonding is reliable, flexible, and low cost when compared to other forms of first-level interconnections. In this article a brief discussion of wire bonding is presented along with bond formation fundamentals. Aspects of wire bond reliability will be explored in conjunction with methods of wire bond testing. Particular attention is given to fine pitch bonding, bonding to stacked die, higher frequency bonding, ball bonding with copper wire, and advanced bond testing methods.

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33

IMADO, Keiji, Atuyoshi MIURA, Hiroomi MIYAGAWA, Tetsuya MIYAGAKI, and Manabu HATASAKO. "A Study of Bonding Miss on Ultrasonic Wire Bonding." Transactions of the Japan Society of Mechanical Engineers Series C 66, no. 647 (2000): 2395–401. http://dx.doi.org/10.1299/kikaic.66.2395.

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34

Milton, Basil, Odal Kwon, Cuong Huynh, Ivy Qin, and Bob Chylak. "Wire Bonding Looping Solutions for High Density System-in-Package (SiP)." International Symposium on Microelectronics 2017, no. 1 (October 1, 2017): 000426–31. http://dx.doi.org/10.4071/isom-2017-wp41_151.

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Abstract System-in-Package (SiP) have seen a lot of growth in recent years especially in mobile devices due to its higher level of system integration, more design flexibility and smaller form factor. Two or more semiconductor die and passive components are usually present in a SiP device. Die to die bonding and increased I/O density are two common challenges associated with wire bonding in SiPs. High density SiP packages often have high I/O counts and tight wire clearance. As a result, the requirements for wire bond looping are high. To avoid wire shorts, the wire bond loops need to be well designed in order to have optimal wire clearance between various tiers of wire loops as well as neighboring loops. The formed loops need to have low wire sway after wire bonding and low wire sweep after molding. Due to the existence of multiple dies and other passive components within the same package, special wire bond loops with long flat lengths and sharp bending angles are sometimes necessary to clear the die edges and the other components. In this paper, we will review a few new wire bonding looping solutions including 3D looping design software, 3D loop clearance checking and multi-tier loop formation improvements. A robust package design is essential to improve production yield. A 3D looping design software has been developed to evaluate the robustness of various package designs from a wire looping perspective. The software is able to detect potential issues early on in the design cycle and evaluate alternatives quickly, therefore reduces the time to market and improves design robustness. A spatial 3D clearance checking tool has been developed to detect any interference between the densely populated wire loops. The tool can also detect interference between the wires and the edges of different dies. Furthermore, the wire clearance against various components in the package can also be assessed. Process engineers can leverage the clearance check tool and the 3D visualization of wires, multiple dies and components to aid wire bonding looping optimization. Multi-tier looping requires a large range of loop height and wire length capability. In order to achieve optimal looping for high density multi-tier applications, a separate wire bonding looping software has been developed to generate optimal wire bonding motion trajectories that can achieve the loop shapes designed by the 3D looping design software. An example of 6 loop tier application is developed and results are analyzed to show the wire bonding capabilities including looping height from 75um to 500um and wire length up to 5mm.

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Meinhold, Mitchell, Caprice Gray, Jeffery Delisio, Ernest Kim, Christian Wells, Daniela Torres, Peter Lewis, and David Hagerstrom. "A Wirebonding Instrument for Insulated and Coaxial Wires." Journal of Microelectronics and Electronic Packaging 17, no. 2 (April 1, 2020): 52–58. http://dx.doi.org/10.4071/imaps.1115585.

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A tool has been developed that supports a novel microelectronic integration paradigm whereby interconnects between components are directly established by means of microcoax wire bonding. A near-term use case of the tool is to facilitate rapid prototyping of high-bandwidth systems. When further matured, it will be able to rapidly integrate complex systems with hundreds or thousands of interconnects with minimal design time. Automatic stripping and bonding of coax wires having overall diameters between 50 and 100 μm present an array of process challenges that pose interesting demands on the material system of the wire and the bonding tool. This study reviewed a microcoax bonding system that is currently in development at Draper which is able to strip, feed, and bond microcoax wire. The system utilizes a combination of electric flame-off and thermal reflow to strip outer metal shielding and polymer dielectric layers, respectively. It leverages a rotary wire feed mechanism to precisely control wire position so that predetermined wire lengths can be established. Progress in the design of the wires, tooling, and software control architecture is reviewed.

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Mei, Ge Ge, Bin Jin, and Wei Gong. "Quality Monitoring and Prospects of Wire Bonding." Advanced Materials Research 588-589 (November 2012): 1156–60. http://dx.doi.org/10.4028/www.scientific.net/amr.588-589.1156.

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Wire bonding is rapidly developmental technology of microelectronic packaging nearly half a century and become the main trend of semiconductor packaging field currently. This article introduces the main process parameters influencing on bonding quality, the methods to improve the bonding reliability, and prospects of developmental tendency of wire bonding.

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Petuhov, I. B. "Stabilization of bonding force during ultrasonic wire and ribbon bonding." Технология и конструирование в электронной аппаратуре, no. 1-2 (2021): 49–53. http://dx.doi.org/10.15222/tkea2021.1-2.49.

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To improve the quality of ultrasonic wire and ribbon bonding, the author propose a methodology for stabilizing the bonding force by compensating the rigidity of ultrasonic transducer (UST) mount in the ultrasonic / thermosonic bonding cycle. The author analyze the construction of ultrasonic technological systems and factors affecting the stability of the bonding process. The bonding force is controlled by an electromagnetic unit based on a coil in the field of a constant magnet, the force being directly proportional to the flowing current in the coil. The rigidity of ultrasonic transducer mount was compensated by the data obtained during the preliminary calibration of the change in the mount force over the entire UST overrun range. The calibration in this case is performed with no current flowing through the coil. The force value can be picked up from a digital force sensor. The force values are simultaneously compared with the digitized signal of the deformation sensor. The obtained data is stored in the memory of the wire bonder. In the bonding cycle, after the moment of contact is determined, the drive unit moves the bonding head vertically by the value of a predetermined distance of approximately one diameter of the bonding wire. This causes the movable part of the UST mount to rise and the force to increase. This increase is compensated by the automatic reduction of the current in the electromagnetic coil, which allows maintaining the preset force at the specified level. The bonding force during bonding is compensated in the same way, with the difference that the vector of force compensation changes – the force should increase with an increase in the deformation of the bonding wire. The implementation of the proposed algorithm made it possible to improve the bonding force stabilization to 20% when bonding thick wire, as well as to improve bonding quality. The proposed solution is also applicable in other technological ultrasound bonding systems, including bonding wire with the diameter of <100 microns.

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Brökelmann, M., D. Siepe, M. Hunstig, M. McKeown, and K. Oftebro. "Copper wire bonding ready for industrial mass production." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000399–405. http://dx.doi.org/10.4071/isom-2015-wp32.

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Copper wire as a bonding material for the top side connection of power semiconductors is highly desired. One current drawback in heavy copper wire bonding is the relatively low lifetime of the consumables. The bonding tool wear mechanisms and the corresponding factors are investigated. To reduce wear, different approaches are tested in long-term bonding tests. Optimized bonding tool tip geometry and tool material are two of these factors. Optimized bonding parameters were investigated as well and show a significant improvement in bonding tool lifetime. Wear and lifetime of the cutter and the wire guide are also examined. Additionally, the impact of bonding tool wear on different aspects of bond quality is addressed. It is also shown how wear can be monitored by machine process data recording and how a derived signal correlates to the actual wear status. These major advances in heavy copper wire bonding now make it a robust, reliable and efficient interconnection technology.

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Evans, Daniel D. "Multipurpose Wire Bonding – Bumps, Wires, Combination Interconnects, and Operation Efficiency." International Symposium on Microelectronics 2013, no. 1 (January 1, 2013): 000324–30. http://dx.doi.org/10.4071/isom-2013-tp44.

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Today's multipurpose wire bonding machines are required to deliver a combination of wires, bumps, and specialty interconnects for RF, automotive, and optical markets with odd-form factor parts. These market production requirements are generally lower volume with a higher mix of products compared to typical high-volume semiconductor packaging of memory and logic. These markets also require multipurpose wire bonders to accommodate large work area, deep access, and a complex mix of bond surfaces, wire shapes, and bumps. The number of components in a package can vary from one with a few wires up to hundreds of components with thousands of wires. Programming methods, process development, traceability, and rework are different for customers using this class of bonder. A survey of customer application cases shows the range of capabilities available to packaging engineers. The four primary cases presented highlight the range of applications that can be handled for odd-form factor packages and specific areas of focus to maximize productivity for these classes of products.Case 1: Ball Bump Size and Shape Examples: acheiving 119μm down to 44μm bonded ball diameters and range of shapes.Case 2: Ambient Wire Bonding to a 6″ Tall Package: demonstrating allowable bonding volume and tooling flexibility plus the ability to bond Au with substrates at ambient temperature.Case 3: Batch Load Tray (Mechanical and Vacuum Clamping): allowing quick change over for radically different sized packages.Case 4: Complex High Part Count Packages: supporting alternate parts and alternate bonding wires, stand-off stitch, and security bonds require special features for programming and navigation methods to allow easy creation and navigation of complex programs for maximum productivity. Breakdown of timing and efficiency is provided showing programming efficiencies of 2X or better. These cases will help packaging engineers extrapolate to their own cases and show how a multipurpose automatic wire bonder can be an effective way of automating or semi automating these manually or automatically presented packages for higher throughput, higher quality and consistency, and less labor usage for lower cost.

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Chylak, Bob, Horst Clauberg, John Foley, and Ivy Qin. "Copper Wire Bonding: R&D to High Volume Manufacturing." International Symposium on Microelectronics 2012, no. 1 (January 1, 2012): 000638–49. http://dx.doi.org/10.4071/isom-2012-wa41.

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During the past two years copper wire bonding has entered high volume manufacturing at a number of leading edge OSATs and IDMs. Usage of copper wire has achieved 20% market share and is expected to exceed 50% within three years. Products spanning the range from low pin count devices with relatively large wire diameter to FPGA's with nearly one thousand wires at 20 μm or even 18 μm wire are now using copper wire. This paper will discuss the requirements for developing a robust copper wire bonding process and then moving it to high volume manufacturing. Process optimization begins with the selection of the appropriate wire diameter, ball diameter, bonding tool and bonding process type. These are functions not only of the bond pad opening, but also of the pad aluminum thickness and relative sensitivity of the pad to damage. Proper optimization depends on the availability of new and modified bond quality metrologies, such as extensive reliance on cross-sectioning and intermetallic coverage measurements. The bonding window of a copper wire bonding process is defined in substantially new terms compared to optimization in gold wire bonding. Once an optimized process has been developed in the lab on a single bonder, it needs to be verified. Copper wire bond processes are much less forgiving with respect to the acceptable variability on the manufacturing floor. To ensure that the process is stable, a low volume pre-manufacturing test is highly recommended. This not only makes sure that the process is stable across multiple bonders, but also ensures the adequacies of manufacturing controls, incoming materials quality and sufficient equipment calibration and maintenance procedures.

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Yuan, Cadmus C. A., H. M. Chang, and Kou-Ning Chiang. "Investigation of the mechanical characteristics of the Cu/low-k BEOL under wire bonding process loading." Journal of Mechanics 38 (2022): 539–51. http://dx.doi.org/10.1093/jom/ufac044.

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ABSTRACT Wire bonding is a key integrated circuit (IC) interconnect technology, and it adheres metal wires to the IC pad and substrate by applying significant compression and energic loading. On the other hand, the Cu/low-k technology of the advanced IC industry is driven by the market demands of small size, and low resistance-capacitance delay applications. Because material properties of Cu/low-k back end of line (BEOL) exhibit significant differences from the conventional Al-based system, 3 new reliability failure modes are introduced after the wire bonding process, including the Al pad lift, Cu pad lift and the nanoscaled Cu diffusion barrier crack. To study the mechanical characteristics of the Cu/low-k BEOL under the wire bonding process loading, this research establishes a set of transient numerical models with mesh control and computation acceleration techniques. The mechanical characteristics of the wire bonding process and the differences between the conventional and Cu/low-k BEOLs are analyzed via the detailed analysis of the historical stress plots over the wire bonding process time. Moreover, the risks of wire bonding induced the failure modes against different Cu/low-k designs are studied by the proper mechanical indices, and optimized design trends are suggested.

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Jog, M. A., I. M. Cohen, and P. S. Ayyaswamy. "Heat Transfer in Wire Bonding Process." Journal of Electronic Packaging 116, no. 1 (March 1, 1994): 44–48. http://dx.doi.org/10.1115/1.2905492.

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We have analyzed an electric discharge between wire and planar electrodes with wire diameter and current densities that are typically used in upscaled experimental simulations of the wire bonding process employed in microelectronic manufacturing. A set of continuum conservation equations has been solved to obtain the variation of electric potential, temperature distributions, and the electrode heat fluxes. Results indicate that the main body of the discharge is quasineutral bounded by space charge sheaths at both electrodes. Strong electric fields are concentrated in the electrode sheaths. The heat flux to the wire is sharply peaked near the wire tip but on the plane it decays slowly away from the discharge axis. The model studied here may be used to establish optimum discharge parameters for wire bonding.

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Singh, Inderjit, Shin Low, Syu Fu Song, Chen Shih Jung, Lin Ming San, Ivy Qin, Cuong Huynh, et al. "Pd-coated Cu Wire Bonding Reliability Requirement for Device Design, Process Optimization and Testing." International Symposium on Microelectronics 2012, no. 1 (January 1, 2012): 000396–404. http://dx.doi.org/10.4071/isom-2012-tp42.

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One of the biggest technology drivers in the semiconductor industry today is the fast transition from Au wire bonding to Cu wire bonding. The fast adaptation of Cu and Pd-coated Cu (PCC) wire has focused the whole packaging industry to develop understanding, equipment and processes that can produce a more reliable and robust Cu wire bonding technology. Although the fundamentals of wire bonding technology are very similar between Au and Cu wire bonding, there are a lot of new challenges in Cu wire bonding. Compared to Au wire bonding, Cu wire bonding needs different bond quality measures and metrology. Traditional ball diameter, ball height and shear measurements are not adequate to quantify a Cu wire bonding process. Some of the additional bond quality measures include pad material push out (pad splash), Al layer peel off (pad peel) and crack in the barrier and dielectric layer (pad crack). Another area that is quite different between Au and Cu is the reliability test requirement. In Au wire bonding, because of the fast intermetallic compound (IMC) growth rate, the HTS test is normally the hardest to pass. Due to the corrosion of Cu wire, the HAST test is the most challenging in Cu wire bonding. Reliability requirements still need more knowledge. In this paper, we conduct reliability tests for devices with 3 sets of wire bonding parameters. The bonded samples have IMC coverage between 94% and 97%, well above the industry level of 80%. The reliability (HAST) test passed for all samples at 96 hours. However, there are some failures in the HAST test at 192 hr. There are many factors that can influence reliability outcome including wire bonding and non-wire bonding related factors. The failure analysis identified two potential causes in our case. In one failure case, an abnormally high Chlorine level and void in molding compound were detected next to the failed bond while no Chlorine and void were detected elsewhere. In the 2nd failure case, the bonded ball seems to be off centered and results in poor bonded ball to pad interface. These two factors will be more tightly controlled in future tests to verify the reliability outcome. Intermetallic growth and phase transformation, aluminum oxide, and behavior of palladium in PdCu wire bonds are analyzed using transmission electron microscopy (TEM) of dual beam focused ion beam (FIB) thinned specimens. Results are compared to wire bonding measurement and reliability outcome.

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Hsueh, Hao Wen, Fei Yi Hung, and Truan Sheng Lui. "Recrystallization of Ag and Ag-La Alloy Wire in Wire Bonding Process." Advanced Materials Research 804 (September 2013): 151–57. http://dx.doi.org/10.4028/www.scientific.net/amr.804.151.

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Sliver wire was the novel material to replaced gold wire in wire bonding process, and rare earth element was often added to improve the properties of silver wires. The annealing effect (at 225°C~275°C for 30min) on the tensile mechanical properties of silver wires with φ=20μm was investigated. In addition, the microstructural characteristics and the mechanical properties before and after an electric flame-off (EFO) process were also studied. Free-air ball (FAB) of 85μm diameter from 20μm diameter pure silver wire was too huge for bonding process, otherwise the silver wire was added 0.05 wt.% lanthanum to form Ag-La alloy wire to reduce the diameter of FAB. FAB of Ag-La alloy wire with a 55μm diameter, and can avoid short-circuited. In addition, microstructures, tensile properties and the micro-hardness of Ag-La alloy wires indicated that the best annealing temperature was 425 °C.

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Junhui, Li, Liu Linggang, Ma Bangke, Deng Luhua, and Han Lei. "Dynamics Features of Cu-Wire Bonding During Overhang Bonding Process." IEEE Electron Device Letters 32, no. 12 (December 2011): 1731–33. http://dx.doi.org/10.1109/led.2011.2168190.

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Long, Yangyang, Folke Dencker, Andreas Isaak, Chun Li, Friedrich Schneider, Jörg Hermsdorf, Marc Wurz, Jens Twiefel, and Jörg Wallaschek. "Revealing of ultrasonic wire bonding mechanisms via metal-glass bonding." Materials Science and Engineering: B 236-237 (October 2018): 189–96. http://dx.doi.org/10.1016/j.mseb.2018.11.010.

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Krzanowski, James E., and Nikhil Murdeshwar. "Deformation and bonding processes in aluminum ultrasonic wire wedge bonding." Journal of Electronic Materials 19, no. 9 (September 1990): 919–28. http://dx.doi.org/10.1007/bf02652917.

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Yu, Chun-Min, Kuei-Kuei Lai, Kuen-Suan Chen, and Tsang-Chuan Chang. "Process-Quality Evaluation for Wire Bonding With Multiple Gold Wires." IEEE Access 8 (2020): 106075–82. http://dx.doi.org/10.1109/access.2020.2998463.

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Foo, Yeong Lee, Ah Heng You, and Chee Wen Chin. "Wire Bonding Using Offline Programming Method." Engineering 02, no. 08 (2010): 668–72. http://dx.doi.org/10.4236/eng.2010.28086.

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KANEDA, Tsuyoshi, Hiroshi WATANABE, Yukiharu AKIYAMA, Kunihiro TSUBOSAKI, Asao NISHIMURA, and Kunihiko NISHI. "Development of Coated-Wire Bonding Technology." QUARTERLY JOURNAL OF THE JAPAN WELDING SOCIETY 16, no. 4 (1998): 540–47. http://dx.doi.org/10.2207/qjjws.16.540.

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