Dissertations / Theses on the topic 'Bonding technology'
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Parameswaran, Lalitha. "Silicon pressure sensor using wafer bonding technology." Thesis, Massachusetts Institute of Technology, 1993. http://hdl.handle.net/1721.1/12471.
Full textIncludes bibliographical references (leaves 101-105).
by Lalitha Parameswaran.
M.S.
Devoto, Roberto J. "Micromachined infrared detector using wafer bonding technology." Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/10579.
Full textFiore, Daniel F. "High strength bonding of sapphire." Link to electronic thesis, 2002. http://www.wpi.edu/Pubs/ETD/Available/etd-0829102-155924.
Full textParameswaran, Lalitha. "Integrated silicon pressure sensors using wafer bonding technology." Thesis, Massachusetts Institute of Technology, 1997. http://hdl.handle.net/1721.1/10451.
Full textIncludes bibliographical references (p. 151-156).
by Lalitha Parameswaran.
Ph.D.
Fan, Andy 1976. "Three dimensional integration technology using copper wafer bonding." Thesis, Massachusetts Institute of Technology, 2006. http://hdl.handle.net/1721.1/37915.
Full textIncludes bibliographical references (p. 216-219).
With 3-D integration, the added vertical component could theoretically increase the device density per footprint ratio of a given chip by n-fold, provide a means of heterogeneous integration of devices fabricated from different technologies, and reduce the global RC delay to a non-factor in circuits by using smarter 3-D CAD tools for optimizing device placement. This thesis work will focus primarily on the development and realization of a viable 3-D flow fabricated within MTL. Specifically, the presentation will attempt on answering these questions in regards to 3-D: 1. What enabling technologies were needed for 3-D to work ? 2. Does it really work ? 3. Will the "3-D heat dissipation problem" prevent it from working ? 4. What applications is it good for ? Referring to the first item, a viable 3-D integration flow has been developed on both the wafer-and-die-level, and the enabling technologies were the following: Low temperature Cu-Cu thermocompression bonding, an aluminum-Cu based temporary laminate structure used stabilizing the handle wafer - SOI wafer bond, and tooling optimization of the die-die bonder setup in TRL.
(cont.,) Next, nominal feasibility of the 3-D flow was demonstrated by fabricating a 21-stage and 43-stage CMOS ring oscillators, where each single CMOS inverter / buffer stage was constructed by connecting NMOS-only devices from one substrate with PMOS-only devices from a separate substrate. Proof-of-concept was accomplished when all 92 Cu-Cu bonds, 204 thru-SOI Cu damascene vias, and 56 pairs of MOSFETs communicated simultaneously to produce a 2.75 MHz (43-stage) and 5.5 MHz (21-stage) oscillators, ringing rail-to-rail at 5 V Vdd under proper Vt adjustments on the SOI-PMOS using integrated backgates. Furthermore, to combat the perceived heat dissipation problem in 3-D, this work focused on using the Cu-Cu interlayer bond as heat dissipators, with Cu planes working as flux spreaders and Cu vias as direct heat conduits. Finally, 3-D RF passive integration onto existing chips can be made feasible, under certain device performance trade-offs, by using cobalt magnetic shielding, which offers at least a -10 dB throughout 0-20 GHz, with a max isolation of -24 dB at 13 GHz, at +4 dBm reference input power.
by Andy Fan.
Ph.D.
Ng, Kay-Yip. "A liquid-shear-stress sensor using wafer-bonding technology." Thesis, Massachusetts Institute of Technology, 1990. http://hdl.handle.net/1721.1/13434.
Full textFritz, Mark A. Cassidy Daniel Thomas. "Die bonding of diode lasers /." *McMaster only, 2004.
Find full textProchaska, A. "Silicon micromachining technology for drop-on-demand liquid dispensers." Thesis, Queen's University Belfast, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.368466.
Full textChoi, Yuk-ning Alta. "Repair technology for cracked metallic structures using composite materials /." Hong Kong : University of Hong Kong, 1999. http://sunzi.lib.hku.hk/hkuto/record.jsp?B21213239.
Full textWennergren, Karl Fredrik. "Metal Filling of Through Silicon Vias (TSVs) using Wire Bonding Technology." Thesis, KTH, Mikro- och nanosystemteknik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-145552.
Full textChan, Yu Hin. "Optimization of metallization and process variables in low temperature wire bonding technology /." View Abstract or Full-Text, 2003. http://library.ust.hk/cgi/db/thesis.pl?MECH%202003%20CHAN.
Full textIncludes bibliographical references (leaves 129-132). Also available in electronic version. Access restricted to campus users.
Lin, Huamao. "Application of CMP and wafer bonding for integrating CMOS and MEMS Technology." Thesis, University of Edinburgh, 2007. http://hdl.handle.net/1842/12422.
Full textAskar, Raid. "The role of tin in surface bonding of CO to Pt(111)." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-50842.
Full textSaeidi, N. "A novel micropackage technology for implanted devices using gold-silicon eutectic wafer bonding." Thesis, University College London (University of London), 2012. http://discovery.ucl.ac.uk/1357936/.
Full textLindenmann, Nicole [Verfasser]. "Photonic Wire Bonding as a Novel Technology for Photonic Chip Interfaces / Nicole Lindenmann." Karlsruhe : KIT Scientific Publishing, 2018. http://www.ksp.kit.edu.
Full textJoung, Yeun-Ho. "Electroplating bonding technology for chip interconnect, wafer level packaging and interconnect layer structures." Diss., Available online, Georgia Institute of Technology, 2004:, 2003. http://etd.gatech.edu/theses/available/etd-04052004-180025/unrestricted/joung%5Fyeun-ho%5F200312%5Fphd.pdf.
Full textBarkley, Edward Robert 1977. "Wafer bonding of processed Si CMOS VLSI and GaAs for mixed technology integration." Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/8368.
Full textIncludes bibliographical references (p. 91-94).
The successful bonding of bare thinned Si SOI wafers to bare GaAs wafers in previous research has proven to be an important first step in achieving integration of Si electronics with GaAs optoelectronic devices. The thinning of the SOI wafer has been shown to be a successful solution to the problem of the thermal expansion coefficient mismatch between Si and GaAs, allowing for the potential dense integration of mixed optoelectronic and electronic technologies. This research takes the next logical step toward that end by bonding Si wafers with simulated full back-end processing to GaAs wafers. The back-end processing simulation consists of depositing 1000[Angstroms] of Al, patterning the Al into 5[mu]m serpentine lines on a 5[mu]m pitch, covering the Al with a PECVD oxide, and performing CMP planarization of the oxide. The 1000[Angstroms] variations caused by the Al layer are consistent with surface profiles taken from fully processed SOI wafers obtained from IBM. The result is that these "simulation" wafers model the difficulties presented with bonding fully processed wafers; namely the temperature constraints caused by the existence of buried Al metal and the topography created by the patterned metal. The entire process, including the bonding and post-bond anneal, is carried out at temperatures below 45° C, making it compatible with a fully processed SOI CMOS wafer. The use of dielectric CMP has become a common back-end processing step. The wafer bonding in this work relies on CMP technology to planarize PECVD oxide deposited on the bonding surface of both wafers. The combination of CMP with post CMP cleaning methods results in a PECVD oxide surface with an order of magnitude reduction in the r.m.s. roughness, rendering the surface smooth enough to facilitate wafer bonding. The future goal of this project is to bond fully processed Si CMOS wafers to GaAs wafers containing optoelectronic devices and to test the feasibility of creating interconnects through the bond interface.
by Edward Robert Barkley.
S.M.
Andersson, Viktor, and Andreas Larsson. "Project ABSS : Adhesive bonding of stainless steels." Thesis, Högskolan i Skövde, Institutionen för ingenjörsvetenskap, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:his:diva-13707.
Full text蔡玉寧 and Yuk-ning Alta Choi. "Repair technology for cracked metallic structures using composite materials." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1999. http://hub.hku.hk/bib/B31222420.
Full textMcNeil, Vincent Maurice. "A thin-film silicon microaccelerometer fabricated using electrochemical etch-stop and wafer bonding technology." Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/12013.
Full textIncludes bibliographical references (p. 343-360).
by Vincent Maurice McNeil.
Ph.D.
Borgede, Fabian. "TOOL DEVELOPMENT FOR HIGH RATE ADHESIVE BONDING OF AIRCRAFT CARGO DOORS." Thesis, Luleå tekniska universitet, Institutionen för teknikvetenskap och matematik, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-70195.
Full textBayraktar, Omer. "Beam Switching Reflectarray With Rf Mems Technology." Master's thesis, METU, 2007. http://etd.lib.metu.edu.tr/upload/2/12608811/index.pdf.
Full textby considering the position of the horn antenna with respect to the reflectarray. In the design, the transmission line analysis is applied for matching the ACMPA to the free space. The full wave simulation techniques in HFSS are discussed to obtain the phase design curve which is used in determining two sets of transmission line lengths for each element, one for the broadside and the other for switching to the 40°
at 26.5 GHz. The switching between two sets of transmission line lengths is sustained by inserting RF MEMS switches into the transmission lines in each element. Two types of RF MEMS switches, series and shunt configurations, are designed for the switching purpose in the reflectarray. The phase errors due to nonideal phase design curve and type of the RF MEMS switch are reduced. The possible mutual coupling effects of the bias lines used to actuate the RF MEMS switches are also eliminated by the proper design. To show the validity of the design procedure, a prototype of 20x20 reflectarray composed of ACMPA elements is designed at 25GHz and produced using Printed Circuit Board (PCB) technology. The measurement results of the prototype reflectarray show that the main beam can be directed to the 40°
as desired. The process flow for the production of the reconfigurable reflectarray is suggested in terms of integration of the wafer bonding step with the in-house standard surface micromachined RF MEMS process.
Lindenmann, Nicole [Verfasser], and C. [Akademischer Betreuer] Koos. "Photonic Wire Bonding as a Novel Technology for Photonic Chip Interfaces / Nicole Lindenmann ; Betreuer: C. Koos." Karlsruhe : KIT-Bibliothek, 2017. http://d-nb.info/1149522577/34.
Full textGoh, Wang Ling. "Wafer bonding technology for the production of dielectrically isolated silicon substrates incorporating buried metal silicide layers." Thesis, Queen's University Belfast, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.295389.
Full textGahide, Severine. "COMBINATION OF HYDROENTANGLEMENT AND FOAM BONDING TECHNOLOGIES FORWOOD PULP AND POLYESTER FIBERS IN WET LAY NONWOVEN FABRICS." NCSU, 1999. http://www.lib.ncsu.edu/theses/available/etd-19990216-135019.
Full textThis project searches for synergism between two binder technologies, specifically 1) low levels ofhydroentanglement energy which avoid excessive fiber loss but do not give adequate fabric strength, abrasionresistance or strain recovery, and 2) low levels of binder which do not degrade fabric aesthetics. The mainsteps were to 1) determine the fiber loss while hydroentangling, by testing three fabric weights and severalspecific energy levels for a 50% wood pulp and 50% polyester, and then 2) combine both technologies, fortwo fiber blends, at three levels of specific energy and four levels of binder add on. We found that: 1. Thecarrier screen mesh size, during hydroentanglement, was a critical factor for making the desired fabrics. 2.The fiber loss during hydroentanglement increases linearly with increasing specific energy, in the rangestudied. 3. The fabric basis weight has a very weak influence on the fiber loss during hydroentanglement. 4.Fabrics hydroentangled from one side only or on both sides lose the same amount of fibers. 5. The physicalproperties -strength, load at 5% strain, abrasion resistance- are greatly improved with an add-on of binder,while different levels of hydroentanglement energy input were found to be less significant. 6. Thehydroentangled and foam bonded fabrics are softer than those which were foam bonded only. 7. Theaddition of foam bonding up to 5% did not affect the softness of the hydroentangled fabrics. 8. The hydrogenbonding effect is shown to be significant at these levels of hydroentanglement and binder add-on. 9. Thefabric bending rigidity can be correlated with the Young's modulus of the bonded fabric for a 60% woodpulp fabric. 10. The abrasion resistance behavior is very different depending on the side tested: foam free orfoamed.
HAMMER, VICTORIA A. "THE INFLUENCE OF INTERACTION ON ACTIVE LEARNING, LEARNING OUTCOMES, AND COMMUNITY BONDING IN AN ONLINE TECHNOLOGY COURSE." University of Cincinnati / OhioLINK, 2002. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1014665480.
Full textKhan, Sadia Arefin. "Electromigration analysis of high current carrying adhesive-based copper-to-copper interconnections." Thesis, Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/44885.
Full textYung, Chi-Fan 1973. "A process technology for realizing integrated inertial sensors using deep reactive ion etching (DRIE) and aligned wafer bonding." Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/80148.
Full textJha, Gopal Chandra. "Copper to copper bonding by nano interfaces for fine pitch interconnections and thermal applications." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/22588.
Full textTesař, Petr. "Technologie výroby dveří kolejových vozidel pomocí nových lepících systémů." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2011. http://www.nusl.cz/ntk/nusl-229785.
Full textSamel, Björn. "Novel Microfluidic Devices Based on a Thermally Responsive PDMS Composite." Doctoral thesis, KTH, Mikrosystemteknik, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4470.
Full textQC 20100817
Mehrotra, Gaurav. "Ultra thin ultrafine-pitch chip-package interconnections for embedded chip last approach." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/22594.
Full textHonrao, Chinmay. "Fine-pitch Cu-snag die-to-die and die-to-interposer interconnections using advanced slid bonding." Thesis, Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/50333.
Full textEvaldsson, Pernilla, and Birgit Martens. "Ultraljudssvetsning : ett komplement eller ersättning till symaskinen?" Thesis, Högskolan i Borås, Institutionen Ingenjörshögskolan, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:hb:diva-18663.
Full textUppsatsnivå: C
Torunbalci, Mert Mustafa. "Wafer Level Vacuum Packaging Of Mems Sensors And Resonators." Master's thesis, METU, 2011. http://etd.lib.metu.edu.tr/upload/12613015/index.pdf.
Full textC with a v holding time and bond force of 60 min and 1500 N, respectively. On the other hand, bonding on surfaces where 0.15&mu
m feedthrough lines exist can be done at 420º
C with a 100% yield using same holding time and bond force. Furthermore, glass frit bonding on glass wafers with lateral feedthroughs is performed at temperatures between 435-450º
C using different holding periods and bond forces. The yield is varied from %33 to %99.4 depending on the process parameters. The fabricated devices are wafer level vacuum packaged using the optimized glass frit and Au-Si eutectic bonding recipes. The performances of wafer level packages are evaluated using the integrated gyroscopes, resonators, and pirani vacuum gauges. Pressures ranging from 10 mTorr to 60 mTorr and 0.1 Torr to 0.7 Torr are observed in the glass frit packages, satisfying the requirements of various MEMS devices in the literature. It is also optically verified that Au-Si eutectic packages result in vacuum cavities, and further study is needed to quantify the vacuum level with vacuum sensors based on the resonating structures and pirani vacuum gauges.
Lightsey, Charles Hunter. "All-copper chip-to-substrate interconnections for flip-chip packages." Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/34729.
Full textReul, Stefan. "Simulation in der Verbindungstechnik – ein Überblick." Universitätsbibliothek Chemnitz, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-201000831.
Full textGarst, Sebastian, and n/a. "Design and production of polymer based miniaturised bio-analytical devices." Swinburne University of Technology, 2007. http://adt.lib.swin.edu.au./public/adt-VSWT20071003.082618.
Full textMagnusson, Mikael S. "Testing and Evaluation of Interfibre Joint Strength under Mixed-Mode Loading." Licentiate thesis, KTH, Hållfasthetslära (Inst.), 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-116700.
Full textDe brottmekaniska egenskaperna hos fiberfogar är nyckeln för uppbyggnaden av styrka hos fibrösa material såsom papper och kartong. För att effektivt skräddarsy sådana materials egenskaper genom kemisk eller mekanisk behandling och för att förstå hur sådana modifieringar påverkar egenskaperna på en mikroskopisk nivå är provning av individuella fiber-fiber-kors en allmänt använd metod. Belastningen i en fiberfog vid provning av individuella fiber-fiber kors är dock generellt mycket komplicerad och ytterligare kunskap om hur fiberfogars mekaniska egenskaper skall utvärderas är önskvärd. I Artikel A, presenteras en metod för samtidig tillverkning av flera fiber-fiber kors samt en metod för mekanisk provning av dessa med olika typer av belastning. Metoden tillämpades för att studera styrkan av fiber-fiber-kors med olika geometri och vid två olika lastfall. En undersökning av hur torktrycket, torkmetoden samt graden av malning inverkar på fogstyrkan presenteras. De uppmätta brottlasterna skalades med olika karakteristiska längder för fogen; nominell överlapparea samt fogens längd och bredd. Resultaten visade att ingendera av normaliseringsmetoderna reducerade variationskoefficienten (av medelvärdet av styrkan) samt att brottlasten för en globalt fläkande belastning var omkring 20 % av brottlasten för prov utförda med den konventionella skjuvande belastningen. I Artikel B, presenteras en metod för utvärdering av mätningar av styrkan hos fiberfogar med hänseende på kraft- och moment- resultanterna i gränsytan mellan fibrerna. Metoden används för att studera belastningsmoden hos fiber-fiber--kors provade i två principiellt olika lastfall. Resultaten visar att för ett typiskt fiberfogsprov av isolerade fiber-fiber-kors med långa fria fibersegment, så kan inte belastningsmoderna vid sidan av skjuvning försummas och att de är starkt beroende av fiber-fiber-korsets geometri. För att kunna jämföra fiberfogar av olika storlek och kvantifiera förhållandet mellan normal- och skjuvbelastningen i fogen skalades de resulterande krafterna och momenten med tvärsnittsstorheter baserade på en approximation av fogareans utformning.
QC 20130125
BiMaC Innovation
Klíma, Martin. "Nekonvenční aplikace keramiky s nízkou teplotou výpalu." Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2015. http://www.nusl.cz/ntk/nusl-234533.
Full textSpirig, John Vincent. "A new generation of high temperature oxygen sensors." Columbus, Ohio : Ohio State University, 2007. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1188570727.
Full textChoudhury, Abhishek. "Chip-last embedded low temperature interconnections with chip-first dimensions." Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/37104.
Full textWu, Yujing. "Diffusion kinetics and microstructure of eutectic and composite solder/copper joints." Thesis, access full-text online access from Digital dissertation consortium, 1994. http://libweb.cityu.edu.hk/cgi-bin/er/db/ddcdiss.pl?9424414.
Full textBeix, Vincent. "Etudes des procédés d'encapsulation hermétique au niveau du substrat par la technologie de transfert de films." Phd thesis, Université Paris Sud - Paris XI, 2013. http://tel.archives-ouvertes.fr/tel-01037897.
Full textAli, Khaled Abedela Mahdi. "Application of zirconium-coated titanium wires as restorative orthodontic materials." Thesis, Cape Peninsula University of Technology, 2013. http://hdl.handle.net/20.500.11838/1532.
Full textOrthodontic archwires are made from different alloys. It is now possible to match phases of treatment with orthodontic archwires according to its mechanical properties. On this basis, the titanium molybdenum alloys (TMA) in its beta phase have an excellent combination of strength and flexibility when used as archwires to apply biomechanical forces that affect tooth movement. It has recently gained increased popularity in orthodontic treatment. There are, however, disadvantages associated with the use of orthodontic archwires, such as high surface roughness, which increases friction at the archwire-brackets interface during the sliding process. The surface roughness of dental materials is of utmost importance. Properties such as desirable tensile strengths, load deflection, hardness and low modulus of elasticity and resistance against corrosion & wear determine the area of the contact surface, thereby influencing the friction. The main object of this study was to improve the strength and surface roughness of the beta-titanium orthodontic archwires (β-Ti III) and timolium archwires (TIM), taking into account of retention of the archwires strength. The following tasks were performed. Layers of Zr were deposited on the β-Ti archwires and compared with the archwire strength before and after Zr deposition. The structure of selected archwires and its composition and surface roughness was investigated before and after Zr deposition, using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The force of selected archwires before and after deposition with layers of Zr by Hounsfield deflection testing was studied. Two commercially available orthodontic archwires were used in this study, namely, β-Ti III and TIM orthodontic archwires. The archwires were cut into 25 mm long specimens. In this study, the electron beam-physical vapour deposition (EB-PVD) technique was applied to deposit pure Zr (thicknesses of 5, 10, 25 and 50 nm) on selected archwires and the effects thereof were investigated using AFM, SEM and the Hounsfield deflection test. Results of SEM and AFM analysis and deflection tests showed significant differences between Zr-coated archwires compared with uncoated archwires. Zr-coated archwires (5, 10, 25 and 50 nm depositions) had reduced surface roughness compared with uncoated archwires. A high load deflection rate was exhibited by the coated β-Ti III archwires and a low load deflection rate was exhibited by the coated TIM archwires. There was a difference in load deflection rate between the coated and uncoated archwires. Deposition of 5, 10, 25 and 50 nm Zr on both types of β-Ti orthodontic archwires is recommended for even sliding mechanics due to resulting reduced surface roughness with a good load deflection rate compared with uncoated β-Ti orthodontic archwires. KEYWORDS Surface roughness Zirconium Titanium Deflection test Beta titanium orthodontic archwires Orthodontic archwires alloys Coated materials Electron beam-physical vapour deposition Scanning electron microscopy Atomic force microscopy
Melin, Timothy R. "Investigating Wood Welding Parameters Using a Prototype Welding Machine." DigitalCommons@CalPoly, 2010. https://digitalcommons.calpoly.edu/theses/420.
Full textHan, Ki Jin. "Electromagnetic modeling of interconnections in three-dimensional integration." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/29642.
Full textCommittee Chair: Madhavan Swaminathan; Committee Member: Andrew E. Peterson; Committee Member: Emmanouil M. Tentzeris; Committee Member: Hao-Min Zhou; Committee Member: Saibal Mukhopadhyay. Part of the SMARTech Electronic Thesis and Dissertation Collection.
Thellman, Eric. "Taktikens utveckling i den tekniska revolutionen." Thesis, Försvarshögskolan, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:fhs:diva-7605.
Full textOberhammer, Joachim. "Novel RF MEMS Switch and Packaging Concepts." Doctoral thesis, KTH, Signaler, sensorer och system, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3817.
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Hausding, Jan. "Multiaxiale Gelege auf Basis der Kettenwirktechnik – Technologie für Mehrschichtverbunde mit variabler Lagenanordnung." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-27716.
Full textMultiaxial multi-ply fabrics made by warp knitting are excellently suited for the application in fiber reinforced composites. The usual configuration of the stitch-bonding machines, which are used to produce these fabrics, necessarily leads to composite laminates with an asymmetric layer arrangement and only one layer of yarns in the zero degree direction of the fabric. The variability of patterning with the binding yarn is also limited. By completing the stitch-bonding process with an additional work step it is possible to produce stitch-bonded fabrics without any restrictions concerning the arrangement of the individual layers in the fabric, for example with a symmetric composition. This is the basis for the development of two exemplary products in the fields of textile reinforced plastics and textile reinforced concrete. It can be shown that the application of the extended stitch-bonding process is advantageous beyond the layer arrangement, positively affecting the mechanical properties of the fabric and the composite. From these examples, conclusions are drawn regarding the configuration of future stitch-bonding machines