Academic literature on the topic 'Bonding ratio'
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Journal articles on the topic "Bonding ratio":
Li, Hong, Miao-Quan Li, Wei-Xin Yu, and Hong-Bin Liu. "Significance and interaction of bonding parameters with bonding ratio in press bonding of TC4 alloy." Rare Metals 35, no. 3 (August 1, 2014): 235–41. http://dx.doi.org/10.1007/s12598-014-0330-3.
Li, Qingbo, Hongfei Wang, Mowen Xie, and Weinan Liu. "Calculation Method of Bonding Section of Joint Surface of Dangerous Rock Mass Based on Amplitude Ratio." Shock and Vibration 2020 (November 30, 2020): 1–9. http://dx.doi.org/10.1155/2020/8820639.
Guo, Shan Shan, Yuan Yuan Jiang, Hao Zeng, Xiao Yong Wan, and Yong Jun Li. "Diffusion Bonding Performance of Copper Target for 300mm Integrated Circuit." Materials Science Forum 1035 (June 22, 2021): 692–97. http://dx.doi.org/10.4028/www.scientific.net/msf.1035.692.
Mei, Han, Lihui Lang, Xiaoxing Li, Hasnain Ali Mirza, and Xiaoguang Yang. "Prediction of Tensile Strength and Deformation of Diffusion Bonding Joint for Inconel 718 Using Deep Neural Network." Metals 10, no. 9 (September 18, 2020): 1266. http://dx.doi.org/10.3390/met10091266.
Yoshida, Yoshinori, Takamasa Matsubara, Keisuke Yasui, Takashi Ishikawa, and Tomoaki Suganuma. "Influence of Processing Parameters on Bonding Conditions in Backward Extrusion Forged Bonding." Key Engineering Materials 504-506 (February 2012): 387–92. http://dx.doi.org/10.4028/www.scientific.net/kem.504-506.387.
Aggarwal, A., and G. De Souza. "Effect of MDP/VBATDT ratio on zirconia-substrate bonding." Dental Materials 29 (January 2013): e1. http://dx.doi.org/10.1016/j.dental.2013.08.002.
Lai, Andre, Nicolas Altemose, Jonathan A. White, and Aaron M. Streets. "On-ratio PDMS bonding for multilayer microfluidic device fabrication." Journal of Micromechanics and Microengineering 29, no. 10 (August 7, 2019): 107001. http://dx.doi.org/10.1088/1361-6439/ab341e.
Moers, Cassandra, and Christian Dresbach. "Influence of R-Ratio on Fatigue of Aluminum Bonding Wires." Metals 13, no. 1 (December 20, 2022): 9. http://dx.doi.org/10.3390/met13010009.
Yan, Lintong, Yunong Ye, Zhe Ji, Yijia Liu, Chenglong Zhou, and Song Liu. "The Stress Induced by the Epoxy Bonding Layer Changing in the Layered Hollow Spheres." Science of Advanced Materials 14, no. 4 (April 1, 2022): 736–42. http://dx.doi.org/10.1166/sam.2022.4287.
Xu, Wei, Chengdong Xia, and Chengyuan Ni. "Numerical Simulation and Experimental Verification of Hot Roll Bonding of 7000 Series Aluminum Alloy Laminated Materials." Metals 14, no. 5 (May 7, 2024): 551. http://dx.doi.org/10.3390/met14050551.
Dissertations / Theses on the topic "Bonding ratio":
Hofmann, Lutz. "3D-Wafer Level Packaging approaches for MEMS by using Cu-based High Aspect Ratio Through Silicon Vias." Doctoral thesis, Universitätsbibliothek Chemnitz, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-231412.
Im Bereich mobiler Elektronik, wie z.B. bei Smartphones, Smartcards oder in Kleidung integrierten Geräten ist ein Trend zu erkennen hinsichtlich steigender Funktionalität und Miniaturisierung. Bei dieser Entwicklung spielen Mikroelektromechanische Systeme (MEMS) eine entscheidende Rolle zur Realisierung neuer Funktionen, wie z.B. der Bewegungsdetektion. Die Anforderungen derartiger Bauteile zusammen mit dem begrenzten zur Verfügung stehenden Platz erfordern neuartige Technologien für die Aufbau- und Verbindungstechnick (engl. Packaging) der Bauteile. Das 3D-Wafer Level Packaging (3D-WLP) ermöglicht eine Lösung für eine miniaturisierte MEMS-Bauform unter Nutzung von Techniken wie dem Waferlevelbonden (WLB) und den Siliziumdurchkontaktierungen (TSV von engl. Through Silicon Via). Diese Technologie erhöht die effektive aktive Fläche des MEMS Bauteils durch die Reduzierung von Toträumen, welche für andere Ansätze wie der Drahtbond-Montage üblich sind. In der vorliegenden Arbeit wurden verschiedene Technologiekonzepte für den Aufbau von 3D-WLP für MEMS erarbeitet. Dabei lag der Fokus auf einer Kupfer-basierten Technologie sowie auf zwei prinzipiellen Varianten für die TSV-Implementierung. Dies umfasst den Via Middle Ansatz, welcher auf der TSV Herstellung auf einem separaten Kappenwafer beruht, sowie den Via Last Ansatz mit einer TSV Herstellung entweder im MEMS-Wafer oder im Kappenwafer. Für beide Varianten mit individuellen Herausforderungen wurden entsprechende Prozessmodule entwickelt. Beim Via Middle Ansatz ist die Wafer-bezogene Ätzratenhomogenität des Siliziumtiefenätzen entscheidend für das spätere Freilegen der TSVs von der Rückseite. Hier hat sich eine Reduzierung der TSV-Tiefe auf bis zu 80 μm vorteilhaft erwiesen insofern, das Kupfer-Thermokompressionsbonden (Cu-TKB) vor dem Abdünnen erfolgt. Zur Metallisierung der TSVs wurde ein Cu Galvanikprozess erarbeitet, welcher es ermöglicht gleichzeitig eine Umverdrahtungsebene sowie die Bondstrukturen für das Cu-TKB zu erzeugen. Beim Via Last Ansatz ist die TSV Isolation eine Herausforderung. Es wurden CVD (Chemische Dampfphasenabscheidung) Prozesse untersucht, wobei eine Kombination aus PE-TEOS und SA-TEOS sowie eine Parylene Beschichtung erfolgversprechende Ergebnisse liefern. Des Weiteren wurde eine Methode zur Erzeugung bondfähiger Oberflächen für das Siliziumdirektbonden erarbeitet, welche eine Nass-Vorbehandlung des MEMS umgeht. Ein realer MEMS-Beschleunigungssensor sowie Testaufbauten dienen zur Demonstration der Gesamtintegrationstechnologie sowie zur Charakterisierung elektrischer Parameter
Wassermann, Alice. "Quantification multi-échelles de la dégradation d’un sable traité soumis à des cycles hydriques." Electronic Thesis or Diss., Université de Lorraine, 2023. http://www.theses.fr/2023LORR0085.
Soil treatment, especially with hydraulic binders or lime, is a widespread technique to improve the mechanical characteristics of poor-quality soils. After their construction, engineering structures are subjected to environmental solicitations that can potentially alter the effects of the treatment, and thus lead to the degradation of the performance of the treated soil. In this context, the objective of this thesis was to study the impact of the accumulation of hydric cycles on the mechanical behaviour of a cement-treated sand. A multi-scale and multi-physics methodology was set up to understand and quantify the degradation of the macroscopic mechanical behavior of cement-treated sands during drying/wetting cycles.Short-term mechanical characterization of the sand was performed by conducting a triaxial testing campaign. The bonding ratio, η_bondmax, defined according to the stress-dilatancy theory, was introduced to assess the mobilization and the degradation of cementitious bonds during the triaxial tests. In order to characterize the durability of the treated sand, the impact of two types of hydric cycles of different intensity was evaluated. Following the cycles, triaxial tests were performed constituting a database of 130 test results. The bonding ratio monitoring allowed to explicitly quantify the degradation of the cemented specimens as a function of the type and number of cycles. The main effect of the hydric cycles is to alter the cementitious bonds and subsequently to decrease the mechanical performances. This alteration depends on the cement content but also on the intensity of the cycles. Type I cycles lead to a more important degradation than type II cycles. The kinetics of the alteration as well as its extent depend on the cement content.The investigation of the processes occurring at the microscopic scale after 24 cycles of the two types via microscopic observations (SEM and TEM) and physicochemical analyses (XRD and GTA) has highlighted intense mineralogical transformations including carbonation of the cementitious phases to various degrees depending on the intensity of the cycle as well as the formation of ettringite needles in the pore-space. However, in terms of macromechanical behaviour, a stabilization of mechanical performance after a moderate decrease (-20 to -30% of the deviatoric stress) was observed after 12 hydric cycles. This approach has shown that relating mineralogical transformations to durability is not sufficient. It is necessary to evaluate the contribution of each phase to the strength since intense mineralogical transformations are not necessarily associated with strong degradation of the treated soils.A constitutive law to model the observed deviatoric behaviour of treated sand was proposed by combining the Hardening Soil Model for the pre-peak hardening and an inverse sigmoid function for the post-peak softening. This approach showed a satisfactory accuracy to simulate the behaviour and in particular the softening of treated soils under relatively high confining pressures. Under low confining pressures an exponentially decreasing function was however more suitable. In addition, parameters optimization determined the most appropriate values for 5 model parameters (ψ, Rf, m, λ, and ecrit) as a function of cement content. The modeling permitted to complete the experimental study and broughtsome reflexions on the way to simulate the post-peak behaviour.This study allowed a mechanical quantification from macroscopic observations coupled with a physicochemical quantification of the various processes occurring during hydric cycles. A conceptual framework allowing to take into account the effect of cementing in the behaviour of treated soils was proposed
Čižmáriková, Jitka. "Finanční analýza společnosti T-Mobile Czech Republic a.s." Master's thesis, Vysoká škola ekonomická v Praze, 2008. http://www.nusl.cz/ntk/nusl-10370.
Hofmann, Lutz. "3D-Wafer Level Packaging approaches for MEMS by using Cu-based High Aspect Ratio Through Silicon Vias." Doctoral thesis, 2016. https://monarch.qucosa.de/id/qucosa%3A20832.
Im Bereich mobiler Elektronik, wie z.B. bei Smartphones, Smartcards oder in Kleidung integrierten Geräten ist ein Trend zu erkennen hinsichtlich steigender Funktionalität und Miniaturisierung. Bei dieser Entwicklung spielen Mikroelektromechanische Systeme (MEMS) eine entscheidende Rolle zur Realisierung neuer Funktionen, wie z.B. der Bewegungsdetektion. Die Anforderungen derartiger Bauteile zusammen mit dem begrenzten zur Verfügung stehenden Platz erfordern neuartige Technologien für die Aufbau- und Verbindungstechnick (engl. Packaging) der Bauteile. Das 3D-Wafer Level Packaging (3D-WLP) ermöglicht eine Lösung für eine miniaturisierte MEMS-Bauform unter Nutzung von Techniken wie dem Waferlevelbonden (WLB) und den Siliziumdurchkontaktierungen (TSV von engl. Through Silicon Via). Diese Technologie erhöht die effektive aktive Fläche des MEMS Bauteils durch die Reduzierung von Toträumen, welche für andere Ansätze wie der Drahtbond-Montage üblich sind. In der vorliegenden Arbeit wurden verschiedene Technologiekonzepte für den Aufbau von 3D-WLP für MEMS erarbeitet. Dabei lag der Fokus auf einer Kupfer-basierten Technologie sowie auf zwei prinzipiellen Varianten für die TSV-Implementierung. Dies umfasst den Via Middle Ansatz, welcher auf der TSV Herstellung auf einem separaten Kappenwafer beruht, sowie den Via Last Ansatz mit einer TSV Herstellung entweder im MEMS-Wafer oder im Kappenwafer. Für beide Varianten mit individuellen Herausforderungen wurden entsprechende Prozessmodule entwickelt. Beim Via Middle Ansatz ist die Wafer-bezogene Ätzratenhomogenität des Siliziumtiefenätzen entscheidend für das spätere Freilegen der TSVs von der Rückseite. Hier hat sich eine Reduzierung der TSV-Tiefe auf bis zu 80 μm vorteilhaft erwiesen insofern, das Kupfer-Thermokompressionsbonden (Cu-TKB) vor dem Abdünnen erfolgt. Zur Metallisierung der TSVs wurde ein Cu Galvanikprozess erarbeitet, welcher es ermöglicht gleichzeitig eine Umverdrahtungsebene sowie die Bondstrukturen für das Cu-TKB zu erzeugen. Beim Via Last Ansatz ist die TSV Isolation eine Herausforderung. Es wurden CVD (Chemische Dampfphasenabscheidung) Prozesse untersucht, wobei eine Kombination aus PE-TEOS und SA-TEOS sowie eine Parylene Beschichtung erfolgversprechende Ergebnisse liefern. Des Weiteren wurde eine Methode zur Erzeugung bondfähiger Oberflächen für das Siliziumdirektbonden erarbeitet, welche eine Nass-Vorbehandlung des MEMS umgeht. Ein realer MEMS-Beschleunigungssensor sowie Testaufbauten dienen zur Demonstration der Gesamtintegrationstechnologie sowie zur Charakterisierung elektrischer Parameter.:Bibliographische Beschreibung 3 Vorwort 13 List of symbols and abbreviations 15 1 Introduction 23 2 Fundamentals on MEMS and TSV based 3D integration 25 2.1 Micro Electro-Mechanical systems 25 2.1.1 Basic Definition 25 2.1.2 Silicon technologies for MEMS 26 2.1.3 MEMS packaging 29 2.2 3D integration based on TSVs 33 2.2.1 Overview 33 2.2.2 Basic processes for TSVs 34 2.2.3 Stacking and Bonding 47 2.2.4 Wafer thinning 48 2.3 TSV based MEMS packaging 50 2.3.1 MEMS-TSVs 50 2.3.2 3D-WLP for MEMS 52 3 Technology development for a 3D-WLP based MEMS 57 3.1 Target integration approach for 3D-WLP based MEMS 57 3.1.1 MEMS modules using 3D-WLP based MEMS 57 3.1.2 Integration concepts 58 3.2 Objective and requirements for the proposed 3D-WLP of MEMS 60 3.2.1 Boundary conditions 60 3.2.2 Technology concepts 63 3.3 Selected approaches for TSV implementation in MEMS 64 3.3.1 Via Last Technology 64 3.3.2 Via Middle technology 69 4 Development of process modules 75 4.1 Characterisation 75 4.2 TSV related etch processes 77 4.2.1 Equipment 77 4.2.2 Deep silicon etching 78 4.2.3 Etching of the buried dielectric layer 84 4.2.4 Patterning of TSV isolation liner – spacer etching 90 4.2.5 Summary 92 4.3 TSV isolation 93 4.3.1 Principle considerations 93 4.3.2 Experiment 95 4.3.3 Results 97 4.3.4 Summary 102 4.4 Metallisation of TSV and RDL 103 4.4.1 Plating base and experimental setup 103 4.4.2 Investigations related to the ECD process 106 4.4.3 Pattern plating 117 4.4.4 Summary 123 4.5 Wafer Level Bonding 124 4.5.1 Silicon direct bonding 124 4.5.2 Thermo-compression bonding by using ECD copper 128 4.5.3 Summary 134 4.6 Wafer thinning and TSV back side reveal 134 4.6.1 Thinning processes 134 4.6.2 TSV reveal processes 136 4.6.3 Summary 145 4.7 Under bump metallisation and solder bumps 146 5 Demonstrator design, fabrication and characterisation 149 5.1 Single wafer demonstrator for electrical test 149 5.1.1 Demonstrator design and test structure layout 149 5.1.2 Demonstrator fabrication 150 5.1.3 Electrical measurement 151 5.1.4 Summary 153 5.2 Via Last based TSV fabrication in the MEMS device wafer 153 5.2.1 Layout of the MEMS device with TSVs 153 5.2.2 Fabrication of TSVs and wafer thinning 154 5.2.3 Characterisation of the fabricated device 155 5.2.4 Summary 156 5.3 Via Last based cap-TSV for very thin MEMS devices 157 5.3.1 Design 157 5.3.2 Fabrication 158 5.3.3 Characterisation 161 5.3.4 Summary 162 5.4 Via Middle approach based on thinning after bonding 163 5.4.1 Design 163 5.4.2 Results and characterisation 164 5.4.3 Summary 166 6 Conclusion and outlook 167 Appendix A: Typical requirements on a MEMS package and its functions 171 Appendix B: Classification of packaging and system integration techniques 173 B.1 Packaging of electronic devices in general 173 B.2 Single Chip Packages 174 B.3 System integration 175 B.4 3D integration based on TSVs 180 Bibliography 183 List of figures 193 List of tables 199 Versicherung 201 Theses 203 Curriculum vitae 205 Own publications 207
Azari, Shahrokh. "Near-threshold Fatigue of Adhesive Joints: Effect of Mode Ratio, Bond Strength and Bondline Thickness." Thesis, 2010. http://hdl.handle.net/1807/32927.
Chiou, Guo-Lin, and 邱國麟. "The study for anodic bonding of silicon and Pyrex7740 glass with intermedium metal film by radio frequency magnetron sputtering." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/09001915554678891911.
國立彰化師範大學
機電工程學系
92
The study aims at the anodic bonding of P-type silicon and Pyrex 7740 glass with intermedium metal film by RF magnetron sputtering. The experimental parameters included the intermedium metal materials, film thickness, bonding temperature and bonding voltage, respectively. The Taguchi method was used to find the optimum bonding condition. The target functions included the increased maximum bonding current, charge bonding quantity, bonding area ratio and bonding strength, respectively. The maximum bonding current is measured using an amperemeter. The bonding area observation is estimated using an optical microscope. The measurement of bonding strength is according to the microcircuits test standard of department of defense in USA (Mil-STD-883E, Method 2027.2). The element dispersal inside the glass is analyzed using an energy dispersive spectrometer. Based on the Taguchi analysis of the experimental results showed that the bonding voltage is a dominant factor to effect on the maximum bonding current; the bonding voltage is a dominant factor to effect on the charge bonding quantity; the film thickness is a dominant factor to effect on the bonding area ratio; the intermedium metal materials is a dominant factor to effect on the bonding strength. The optimum condition occurs at intermedium film of aluminum with 0.1μm film thickness, bonding temperature of 350℃, and bonding voltage of 500V, respectively. The optimum bonding condition was verified experimentally resulting in the bonding area ratio error of 3.6% and the bonding strength error of 5.7%.
Books on the topic "Bonding ratio":
A, Kreigsmann Gregory, and Institute for Computer Applications in Science and Engineering., eds. Microwave heating and joining of ceramic cylinders: A mathematical model. Hampton, VA: Institute for Computer Applications in Science and Engineering, NASA Langley Research Center, 1994.
N0AX, H. Ward Silver, and ARRL Inc. Grounding and Bonding for the Radio Amateur. Amer Radio Relay League, 2017.
Book chapters on the topic "Bonding ratio":
Ning, Yipeng, Biao Ren, Zhihang Wang, Ao Yao, He Huang, and Tengjiao Wang. "Effect of cement ratio on work and bonding properties of styrene acrylic emulsion-based cement composites." In Advances in Measurement Technology, Disaster Prevention and Mitigation, 497–502. London: CRC Press, 2022. http://dx.doi.org/10.1201/9781003330172-67.
Asaji, Tetsuo. "Isotope ratio of Cl NQR spin-lattice relaxation times in 1D hydrogen-bonding system of tetramethylpyrazine-chloranilic acid at high temperatures." In HFI / NQI 2012, 259–62. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-94-007-6479-8_38.
Atkins, Peter, Julio de Paula, and Ronald Friedman. "Bonding in solids." In Physical Chemistry: Quanta, Matter, and Change. Oxford University Press, 2013. http://dx.doi.org/10.1093/hesc/9780199609819.003.0051.
Keeler, James, and Peter Wothers. "Bonding between the elements." In Chemical Structure and Reactivity. Oxford University Press, 2013. http://dx.doi.org/10.1093/hesc/9780199604135.003.0010.
Burrows, Andrew, John Holman, Simon Lancaster, Tina Overton, Andrew Parsons, Gwen Pilling, and Gareth Price. "Solids." In Chemistry3. Oxford University Press, 2021. http://dx.doi.org/10.1093/hesc/9780198829980.003.0006.
Cooke, Kavian, and Tahir Khan. "Nanostructured Ni/Al2O3 Interlayer: Transient Liquid Phase Diffusion Bonding of Al6061-MMC." In Encyclopedia of Aluminum and Its Alloys. Boca Raton: CRC Press, 2019. http://dx.doi.org/10.1201/9781351045636-140000277.
Pothina, Abhishek, and Saroj Kumar Sarangi. "Analysis of Pineapple Leaf Fiber Reinforced Composite Vehicle Bumper with Varying Fiber Volume Fraction." In Manufacturing and Processing of Advanced Materials, 154–68. BENTHAM SCIENCE PUBLISHERS, 2023. http://dx.doi.org/10.2174/9789815136715123010017.
Turgut Sahin, Halil, and Yasemin Simsek. "Mineral-Bonded Wood Composites: An Alternative Building Materials." In Engineered Wood Products for Construction [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.98988.
Ravi, Nivedhan, Md Shafinur Murad, Dinesh Gurung, M. Bakir, and Ramazan Asmatulu. "Carbonized PAN - Fiber Composites with Nanoscale Inclusions for Improved Thermo-Mechanical Properties." In Proceedings of the 2023 International IEMS Conference, March 5-7, 2023, 84–92. Wichita State University, 2023. http://dx.doi.org/10.62704/10057/26123.
Iggo, Jonathan A., and Konstantin V. Luzyanin. "Factors influencing the chemical shift and coupling constants." In NMR Spectroscopy in Inorganic Chemistry. Oxford University Press, 2020. http://dx.doi.org/10.1093/hesc/9780198794851.003.0003.
Conference papers on the topic "Bonding ratio":
Esfahani, Zahra Kolahdouz, Henk van Zeijl, and G. Q. Zhang. "High aspect ratio lithography for litho-defined wire bonding." In 2014 IEEE 64th Electronic Components and Technology Conference (ECTC). IEEE, 2014. http://dx.doi.org/10.1109/ectc.2014.6897501.
Tani, Hiroshi, Yuki Uesaraie, Renguo Lu, Shinji Koganezawa, and Norio Tagawa. "Hybrid Lubricant Film With High Bonding Ratio and High Coverage." In ASME 2019 28th Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/isps2019-7428.
Pinti, Marie, and Shaurya Prakash. "Fabrication of Hybrid Micro-Nanofluidic Devices With Centimeter Long Ultra-Low Aspect Ratio Nanochannels." In ASME 2013 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/imece2013-65763.
Yao, Shu-Wei, Guan-Jun Yang, Cheng-Xin Li, Xiao-Tao Luo, and Chang-Jiu Li. "Understanding the Formation of the Limited Inter-Lamellar Bonding in Thermal Spray Ceramic Coatings Based on the Intrinsic Bonding Temperature Concept." In ITSC2015, edited by A. Agarwal, G. Bolelli, A. Concustell, Y. C. Lau, A. McDonald, F. L. Toma, E. Turunen, and C. A. Widener. ASM International, 2015. http://dx.doi.org/10.31399/asm.cp.itsc2015p0767.
Schroder, S., A. C. Fischer, G. Stemme, and F. Niklaus. "Very high aspect ratio through silicon vias (TSVs) using wire bonding." In 2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII). IEEE, 2013. http://dx.doi.org/10.1109/transducers.2013.6626728.
Li, Chang-Jiu, Guan-Jun Yang, and Cheng-Xin Li. "Development of the Particle Interface Bonding in Thermal Spray Coatings for Expanding High Performance Applications." In ITSC 2012, edited by R. S. Lima, A. Agarwal, M. M. Hyland, Y. C. Lau, C. J. Li, A. McDonald, and F. L. Toma. ASM International, 2012. http://dx.doi.org/10.31399/asm.cp.itsc2012p0047.
Liu, Tao, Li-Shuang Wang, Shu-Wei Yao, Guan-Jun Yang, Cheng-Xin Li, Xiao-Tao Luo, and Chang-Jiu Li. "Improving the Corrosion Resistance of Thermal Barrier Coatings against CMAS by Depositing Top Ceramic Layer of Enhanced Splat Bonding." In ITSC2015, edited by A. Agarwal, G. Bolelli, A. Concustell, Y. C. Lau, A. McDonald, F. L. Toma, E. Turunen, and C. A. Widener. ASM International, 2015. http://dx.doi.org/10.31399/asm.cp.itsc2015p0092.
Xing, Y. Z., C. J. Li, C. X. Li, and G. J. Yang. "Relationship between the Interlamellar Bonding and Properties of Plasma-Sprayed Y2O3-ZrO2 Coatings." In ITSC2009, edited by B. R. Marple, M. M. Hyland, Y. C. Lau, C. J. Li, R. S. Lima, and G. Montavon. ASM International, 2009. http://dx.doi.org/10.31399/asm.cp.itsc2009p0939.
Hiller, Karla, Matthias Kuechler, Detlef Billep, Bernd Schroeter, Marco Dienel, Dirk Scheibner, and Thomas Gessner. "Bonding and deep RIE: a powerful combination for high-aspect-ratio sensors and actuators." In MOEMS-MEMS Micro & Nanofabrication, edited by Mary-Ann Maher and Harold D. Stewart. SPIE, 2005. http://dx.doi.org/10.1117/12.591509.
Winfrey, A. L., S. E. Reising, L. S. Bilbro, R. J. Nemanich, R. R. Chromik, and K. J. Wahl. "Tribological Properties of Nanocrystalline Diamond Films With Different Nanoscale Morphology and Bonding Characteristics." In World Tribology Congress III. ASMEDC, 2005. http://dx.doi.org/10.1115/wtc2005-63691.