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Journal articles on the topic 'Bit Erasable'

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Published: 25 May 2024

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Lutkenhaus, Norbert, Ashutosh Marwah, and Dave Touchette. "Erasable Bit Commitment From Temporary Quantum Trust." IEEE Journal on Selected Areas in Information Theory 1, no. 2 (August 2020): 536–54. http://dx.doi.org/10.1109/jsait.2020.3017054.

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Yamada, Noboru. "Erasable Phase-Change Optical Materials." MRS Bulletin 21, no. 9 (September 1996): 48–50. http://dx.doi.org/10.1557/s0883769400036368.

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Almost all stones on a lane will become glassy if they are melted and quenched. They will become transparent and quite different in appearance from before vitrification. This visible change constitutes the recording of information. We might refer to the stone as “1 bit.” If the vitrified stone is subsequently kept at a high temperature under its melting point, it will lose its transparency and turn back to the appearance it had before melting and quenching. Thus the “1 bit” is erased. This is the simple mechanism of an erasable phase-change optical memory. In practical systems, a laser beam focused into a diffraction-limited spot is used for recording. This enables the spatial size of the “1 bit” to be very small (of submicron order) so that the recording density is very high.Figure 1 shows a transmission-electron-microscope (TEM) photograph of an actual optical disk. The elliptical smooth areas are recording marks in the amorphous state that were formed by high-power and short-duration laser irradiation. The shortest mark length is about 0.5 μm. The area surrounding the amorphous marks is in the crystalline state and consists of small grains. The two states differ from each other in optical properties such as refractive indices and optical absorption coefficients. Accordingly when the bits are illuminated with low-intensity laser light, the reflected light from the amorphous and crystalline regions is different and may be detected as information signals.The amorphous marks are erased by heating above the glass-transition temperature by laser irradiation, but with lower power than is used in the case of recording.

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Libera, Matthew, and Martin Chen. "Multilayered Thin-Film Materials for Phase-Change Erasable Storage." MRS Bulletin 15, no. 4 (April 1990): 40–45. http://dx.doi.org/10.1557/s0883769400059947.

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Phase-change erasable optical recording uses a focused laser beam as a heat source to reversibly switch a micron-sized area in a thin film between the amorphous and crystalline states. A bit of information is stored as an amorphous spot in a crystalline background, and the state of the bit is determined by the differing optical properties of the amorphous and crystalline phases. This concept was first demonstrated in 1971 and then, after about a decade of exploratory work, the field accelerated throughout the 1980s at several research laboratories. Currently the subject of number of reviews, the field of phase-change materials promises to broaden and intensify in the 1990s.The active layer, where the storage occurs, is typically a tellurium-based alloy with a variety of solute species. Early work studied the recording properties of single-layered films, but it has been clearly shown that multilayered films, where the active layer is sandwiched between two or more dielectric layers, have superior recording properties and resistance to irreversible damage caused by laser heating. The dielectric layers (typically SiO2, Si3N4, or ZnS) provide barriers to active-layer oxidation and contamination, help prevent the hole formation associated with ablative write-once storage methods, and act as crucibles and heat sinks which contain the molten spot and influence its cooling properties, respectively. A typical multilayer structure is shown in the cross-sectional transmission electron micrograph of Figure 1.

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Rensner, Gary D., David A. Eckhardt, and Michael Page. "Nuclear Radiation Response of Intel 64k-Bit and 128k-Bit HMOS Ultraviolet Erasable Programmable Read Only Memories (UVEPROMs)." IEEE Transactions on Nuclear Science 32, no. 6 (1985): 4056–60. http://dx.doi.org/10.1109/tns.1985.4334068.

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Xu, Meili, Weihao Qi, Wenfa Xie, and Wei Wang. "High-speed, low-voltage programmable/erasable flexible 2-bit organic transistor nonvolatile memory with a monolayer buffered ferroelectric terpolymer insulator." Applied Physics Letters 121, no. 8 (August 22, 2022): 083502. http://dx.doi.org/10.1063/5.0105190.

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Achieving multi-bit data storage in one transistor is a promising strategy to further multiply the storage density of the nonvolatile memories (NVMs). Low-voltage programming/erasing (P/E) operation is a prerequisite for the commercialization of the multi-bit NVMs. And, the fast P/E switching is also a desirable figure of merit for the practical NVMs. Here, we develop a route to achieve a high-speed, low-voltage P/E flexible organic transistor-based NVM, by processing a monolayer buffered ferroelectric terpolymer insulator. The physical mechanisms for achieving the high-speed, low-voltage P/E properties in the organic transistor-based NVMs are investigated. As a result, high-performance flexible 2-bit NVMs are achieved, with the low P/E voltage of ±15 V, fast P/E switching capability of 50 ns, high mobility up to 7.4 cm2 V−1 s−1, high stable retention time up to 10 years, reliable endurance over 200 cycles, good mechanical bending durability, and atmosphere stability.

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Herrojo, Cristian, Javier Mata-Contreras, Ferran Paredes, Alba Nunez, Eloi Ramon, and Ferran Martin. "Near-Field Chipless-RFID System With Erasable/Programmable 40-bit Tags Inkjet Printed on Paper Substrates." IEEE Microwave and Wireless Components Letters 28, no. 3 (March 2018): 272–74. http://dx.doi.org/10.1109/lmwc.2018.2802718.

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Jeon, Jin-Kwan, In-Won Hwang, Hyun-Jun Lee, and Younho Lee. "Improving the Performance of RLizard on Memory-Constraint IoT Devices with 8-Bit ATmega MCU." Electronics 9, no. 9 (September 22, 2020): 1549. http://dx.doi.org/10.3390/electronics9091549.

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We propose an improved RLizard implementation method that enables the RLizard key encapsulation mechanism (KEM) to run in a resource-constrained Internet of Things (IoT) environment with an 8-bit micro controller unit (MCU) and 8–16 KB of SRAM. Existing research has shown that the proposed method can function in a relatively high-end IoT environment, but there is a limitation when applying the existing implementation to our environment because of the insufficient SRAM space. We improve the implementation of the RLizard KEM by utilizing electrically erasable, programmable, read-only memory (EEPROM) and flash memory, which is possessed by all 8-bit ATmega MCUs. In addition, in order to prevent a decrease in execution time related to their use, we improve the multiplication process between polynomials utilizing the special property of the second multiplicand in each algorithm of the RLizard KEM. Thus, we reduce the required MCU clock cycle consumption. The results show that, compared to the existing code submitted to the National Institute of Standard and Technology (NIST) PQC standardization competition, the required MCU clock cycle is reduced by an average of 52%, and the memory used is reduced by approximately 77%. In this way, we verified that the RLizard KEM works well in our low-end IoT environments.

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Libera, Matthew R., and Martin Chen. "The effect of an aluminum heat-sink layer on the laser-induced amorphization of SiOx/TeGeSn/SiOx phase-change recording films." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 574–75. http://dx.doi.org/10.1017/s0424820100154846.

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Phase-change erasable optical storage is based on the ability to switch a micron-sized region of a thin film between the crystalline and amorphous states using a diffraction-limited laser as a heat source. A bit of information can be represented as an amorphous spot on a crystalline background, and the two states can be optically identified by their different reflectivities. In a typical multilayer thin-film structure the active (storage) layer is sandwiched between one or more dielectric layers. The dielectric layers provide physical containment and act as a heat sink. A viable phase-change medium must be able to quench to the glassy phase after melting, and this requires proper tailoring of the thermal properties of the multilayer film. The present research studies one particular multilayer structure and shows the effect of an additional aluminum layer on the glass-forming ability.

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Arima, Hideaki, Natuo Ajika, Makoto Ohi, Takayuki Matsukawa, and Natsuro Tsubouchi. "A High Density High Performance Cell for 4M Bit Full Feature Electrically Erasable / Programmable Read-Only Memory." Japanese Journal of Applied Physics 30, Part 2, No. 3A (March 1, 1991): L334—L337. http://dx.doi.org/10.1143/jjap.30.l334.

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Day, Daniel, Min Gu, and Andrew Smallridge. "Use of two-photon excitation for erasable–rewritable three-dimensional bit optical data storage in a photorefractive polymer." Optics Letters 24, no. 14 (July 15, 1999): 948. http://dx.doi.org/10.1364/ol.24.000948.

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Rokeakh, A. I., and M. Yu Artyomov. "Precision Hall Effect magnetometer." Review of Scientific Instruments 94, no. 3 (March 1, 2023): 034702. http://dx.doi.org/10.1063/5.0131896.

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The article presents a Hall effect magnetometer for use in a desktop Electron Paramagnetic Resonance spectrometer with a permanent magnet system and scanning coils. High accuracy and long-term stability at a small size and low cost are achieved through the use of digital signal processing, sequential data filtering in the time and frequency domains, as well as digital correction of raw data based on calibration information. The exciting current of the Hall sensor has the form of an alternating-sign square wave formed by a high-speed H-bridge powered by a stable direct current. Generation of control signals, time selection of data, and their accumulation are performed using Xilinx Field-Programmable Gate Array Artix-7. MicroBlaze embedded 32-bit processor is used to control the magnetometer and interface with adjacent levels of the control system. Taking into account the individual characteristics of the sensor, including the offset voltage, the nonlinearity of the magnetic sensitivity, and their temperature dependences, is carried out by correcting the data obtained by calculating a polynomial depending on the raw magnitude of the field induction and the temperature of the sensor. The polynomial coefficients are individual for each sensor, are determined once during the calibration process, and are stored in the dedicated Electrically Erasable Programmable Read-Only Memory. The magnetometer has a high resolution of 0.1 µT and an absolute measurement error of not exceeding 6 µT.

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Holtzman, Roi, Geva Arwas, and Oren Raz. "Hamiltonian memory: An erasable classical bit." Physical Review Research 3, no. 1 (March 12, 2021). http://dx.doi.org/10.1103/physrevresearch.3.013232.

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Houcine, Naim, Hassini Abdelatif, Benabadji Noureddine, Falil Fatima Zohra, and Bouadi Abed. "Realization of an Inexpensive Embedded Mini-Datalogger for Measuring and Controlling Photovoltaic System." Journal of Solar Energy Engineering 137, no. 2 (April 1, 2015). http://dx.doi.org/10.1115/1.4029232.

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This article describes the design and the realization of an automatic recording device for measurements and controls of multiple physical parameters, in order to manage and monitor a mini central photovoltaic (PV) electricity. It is based on an 8-bit microcontroller, a PIC16F716, which is the lowest cost in the midrange portfolio from Microchip. The automatic recording device (or datalogger) measures the following parameters: the current sourced by a set of PV panels to solar batteries, the voltage across these batteries, the internal and the external temperatures, through a 4 channel multiplexed 8-bit analog–digital converter (ADC) integrated module. This datalogger is clocked with a real time clock and calendar (RTCC), which controls also the periodic measurements. These are stored in an external 8 kB flash electrically erasable/programable read-only memory (EEPROM), a 24LC64, using the I2C protocol, which allows us to easily increase the storage capacity by adding, if necessary, in parallel, up to eight external flash EEPROM.

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Ding, Yin, Qingling Xu, Haitian Wei, Jing Su, and Wei Wang. "High-Speed, Low-Voltage Programmable/ Erasable Flexible Two-Bit Organic Transistor Nonvolatile Memories Base on Ultraviolet-Ozone Treated Terpolymer Ferroelectric Gate." IEEE Electron Device Letters, 2023, 1. http://dx.doi.org/10.1109/led.2023.3337822.

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Zhang, Ruiting, Yahong Jin, Yanmei Li, Haoyi Wu, and Yihua Hu. "Bi3+/Sm3+ co-doped LiTaO3 photochromic perovskites: An ultrafast erasable optical information storage medium." Inorganic Chemistry Frontiers, 2023. http://dx.doi.org/10.1039/d3qi00956d.

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Inorganic photochromic materials hold great scientific and technological promise in the field of optical information storage due to their numerous advantages, including extended color change duration, exceptional fatigue resistance, and...

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