Relevant bibliographies by topics / Bit Erasable

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Academic literature on the topic 'Bit Erasable'

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Published: 25 May 2024

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Journal articles on the topic "Bit Erasable"

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Lutkenhaus, Norbert, Ashutosh Marwah, and Dave Touchette. "Erasable Bit Commitment From Temporary Quantum Trust." IEEE Journal on Selected Areas in Information Theory 1, no. 2 (August 2020): 536–54. http://dx.doi.org/10.1109/jsait.2020.3017054.

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Yamada, Noboru. "Erasable Phase-Change Optical Materials." MRS Bulletin 21, no. 9 (September 1996): 48–50. http://dx.doi.org/10.1557/s0883769400036368.

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Almost all stones on a lane will become glassy if they are melted and quenched. They will become transparent and quite different in appearance from before vitrification. This visible change constitutes the recording of information. We might refer to the stone as “1 bit.” If the vitrified stone is subsequently kept at a high temperature under its melting point, it will lose its transparency and turn back to the appearance it had before melting and quenching. Thus the “1 bit” is erased. This is the simple mechanism of an erasable phase-change optical memory. In practical systems, a laser beam focused into a diffraction-limited spot is used for recording. This enables the spatial size of the “1 bit” to be very small (of submicron order) so that the recording density is very high.Figure 1 shows a transmission-electron-microscope (TEM) photograph of an actual optical disk. The elliptical smooth areas are recording marks in the amorphous state that were formed by high-power and short-duration laser irradiation. The shortest mark length is about 0.5 μm. The area surrounding the amorphous marks is in the crystalline state and consists of small grains. The two states differ from each other in optical properties such as refractive indices and optical absorption coefficients. Accordingly when the bits are illuminated with low-intensity laser light, the reflected light from the amorphous and crystalline regions is different and may be detected as information signals.The amorphous marks are erased by heating above the glass-transition temperature by laser irradiation, but with lower power than is used in the case of recording.
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Libera, Matthew, and Martin Chen. "Multilayered Thin-Film Materials for Phase-Change Erasable Storage." MRS Bulletin 15, no. 4 (April 1990): 40–45. http://dx.doi.org/10.1557/s0883769400059947.

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Phase-change erasable optical recording uses a focused laser beam as a heat source to reversibly switch a micron-sized area in a thin film between the amorphous and crystalline states. A bit of information is stored as an amorphous spot in a crystalline background, and the state of the bit is determined by the differing optical properties of the amorphous and crystalline phases. This concept was first demonstrated in 1971 and then, after about a decade of exploratory work, the field accelerated throughout the 1980s at several research laboratories. Currently the subject of number of reviews, the field of phase-change materials promises to broaden and intensify in the 1990s.The active layer, where the storage occurs, is typically a tellurium-based alloy with a variety of solute species. Early work studied the recording properties of single-layered films, but it has been clearly shown that multilayered films, where the active layer is sandwiched between two or more dielectric layers, have superior recording properties and resistance to irreversible damage caused by laser heating. The dielectric layers (typically SiO2, Si3N4, or ZnS) provide barriers to active-layer oxidation and contamination, help prevent the hole formation associated with ablative write-once storage methods, and act as crucibles and heat sinks which contain the molten spot and influence its cooling properties, respectively. A typical multilayer structure is shown in the cross-sectional transmission electron micrograph of Figure 1.
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Rensner, Gary D., David A. Eckhardt, and Michael Page. "Nuclear Radiation Response of Intel 64k-Bit and 128k-Bit HMOS Ultraviolet Erasable Programmable Read Only Memories (UVEPROMs)." IEEE Transactions on Nuclear Science 32, no. 6 (1985): 4056–60. http://dx.doi.org/10.1109/tns.1985.4334068.

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Xu, Meili, Weihao Qi, Wenfa Xie, and Wei Wang. "High-speed, low-voltage programmable/erasable flexible 2-bit organic transistor nonvolatile memory with a monolayer buffered ferroelectric terpolymer insulator." Applied Physics Letters 121, no. 8 (August 22, 2022): 083502. http://dx.doi.org/10.1063/5.0105190.

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Achieving multi-bit data storage in one transistor is a promising strategy to further multiply the storage density of the nonvolatile memories (NVMs). Low-voltage programming/erasing (P/E) operation is a prerequisite for the commercialization of the multi-bit NVMs. And, the fast P/E switching is also a desirable figure of merit for the practical NVMs. Here, we develop a route to achieve a high-speed, low-voltage P/E flexible organic transistor-based NVM, by processing a monolayer buffered ferroelectric terpolymer insulator. The physical mechanisms for achieving the high-speed, low-voltage P/E properties in the organic transistor-based NVMs are investigated. As a result, high-performance flexible 2-bit NVMs are achieved, with the low P/E voltage of ±15 V, fast P/E switching capability of 50 ns, high mobility up to 7.4 cm2 V−1 s−1, high stable retention time up to 10 years, reliable endurance over 200 cycles, good mechanical bending durability, and atmosphere stability.
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Herrojo, Cristian, Javier Mata-Contreras, Ferran Paredes, Alba Nunez, Eloi Ramon, and Ferran Martin. "Near-Field Chipless-RFID System With Erasable/Programmable 40-bit Tags Inkjet Printed on Paper Substrates." IEEE Microwave and Wireless Components Letters 28, no. 3 (March 2018): 272–74. http://dx.doi.org/10.1109/lmwc.2018.2802718.

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Jeon, Jin-Kwan, In-Won Hwang, Hyun-Jun Lee, and Younho Lee. "Improving the Performance of RLizard on Memory-Constraint IoT Devices with 8-Bit ATmega MCU." Electronics 9, no. 9 (September 22, 2020): 1549. http://dx.doi.org/10.3390/electronics9091549.

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We propose an improved RLizard implementation method that enables the RLizard key encapsulation mechanism (KEM) to run in a resource-constrained Internet of Things (IoT) environment with an 8-bit micro controller unit (MCU) and 8–16 KB of SRAM. Existing research has shown that the proposed method can function in a relatively high-end IoT environment, but there is a limitation when applying the existing implementation to our environment because of the insufficient SRAM space. We improve the implementation of the RLizard KEM by utilizing electrically erasable, programmable, read-only memory (EEPROM) and flash memory, which is possessed by all 8-bit ATmega MCUs. In addition, in order to prevent a decrease in execution time related to their use, we improve the multiplication process between polynomials utilizing the special property of the second multiplicand in each algorithm of the RLizard KEM. Thus, we reduce the required MCU clock cycle consumption. The results show that, compared to the existing code submitted to the National Institute of Standard and Technology (NIST) PQC standardization competition, the required MCU clock cycle is reduced by an average of 52%, and the memory used is reduced by approximately 77%. In this way, we verified that the RLizard KEM works well in our low-end IoT environments.
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Libera, Matthew R., and Martin Chen. "The effect of an aluminum heat-sink layer on the laser-induced amorphization of SiOx/TeGeSn/SiOx phase-change recording films." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 574–75. http://dx.doi.org/10.1017/s0424820100154846.

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Phase-change erasable optical storage is based on the ability to switch a micron-sized region of a thin film between the crystalline and amorphous states using a diffraction-limited laser as a heat source. A bit of information can be represented as an amorphous spot on a crystalline background, and the two states can be optically identified by their different reflectivities. In a typical multilayer thin-film structure the active (storage) layer is sandwiched between one or more dielectric layers. The dielectric layers provide physical containment and act as a heat sink. A viable phase-change medium must be able to quench to the glassy phase after melting, and this requires proper tailoring of the thermal properties of the multilayer film. The present research studies one particular multilayer structure and shows the effect of an additional aluminum layer on the glass-forming ability.
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Arima, Hideaki, Natuo Ajika, Makoto Ohi, Takayuki Matsukawa, and Natsuro Tsubouchi. "A High Density High Performance Cell for 4M Bit Full Feature Electrically Erasable / Programmable Read-Only Memory." Japanese Journal of Applied Physics 30, Part 2, No. 3A (March 1, 1991): L334—L337. http://dx.doi.org/10.1143/jjap.30.l334.

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Day, Daniel, Min Gu, and Andrew Smallridge. "Use of two-photon excitation for erasable–rewritable three-dimensional bit optical data storage in a photorefractive polymer." Optics Letters 24, no. 14 (July 15, 1999): 948. http://dx.doi.org/10.1364/ol.24.000948.

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Dissertations / Theses on the topic "Bit Erasable"

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Melul, Franck. "Développement d'une nouvelle génération de point mémoire de type EEPROM pour les applications à forte densité d'intégration." Electronic Thesis or Diss., Aix-Marseille, 2022. http://www.theses.fr/2022AIXM0266.

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L’objectif de ces travaux de thèse a été de développer une nouvelle génération de point mémoire de type EEPROM pour les applications à haute fiabilité et à haute densité d’intégration. Dans un premier temps, une cellule mémoire très innovante développée par STMicroelectronics – eSTM (mémoire à stockage de charges de type Splitgate avec transistor de sélection vertical enterré) – a été étudiée comme cellule de référence. Dans une deuxième partie, dans un souci d’améliorer la fiabilité de la cellule eSTM et de permettre une miniaturisation plus agressive de la cellule EEPROM, une nouvelle architecture mémoire a été proposée : la cellule BitErasable. Elle a montré une excellente fiabilité et a permis d’apporter des éléments de compréhension sur les mécanismes de dégradation présents dans ces dispositifs mémoires à transistor de sélection enterré. Cette nouvelle architecture offre de plus la possibilité d’effacer les cellules d’un plan mémoire de façon individuelle : bit à bit. Conscient du grand intérêt que présente l’effacement bit à bit, un nouveau mécanisme d’effacement pour injection de trous chauds a été proposé pour la cellule eSTM. Il a montré des performances et un niveau de fiabilité parfaitement compatible avec les exigences industrielles des applications Flash-NOR
The objective of this thesis was to develop a new generation of EEPROM memory for high reliability and high density applications. First, an innovative memory cell developed by STMicroelectronics - eSTM (Split-gate charge storage memory with buried vertical selection transistor) - was studied as a reference cell. In a second part, to improve the reliability of the eSTM cell and to allow a more aggressive miniaturization of the EEPROM cell, a new memory architecture has been proposed: the BitErasable cell. It showed an excellent reliability and allowed to bring elements of under-standing on the degradation mechanisms present in these memory devices with buried selection transistor. This new architecture also offers the possibility to individually erase cells in a memory array: bit by bit. Aware of the great interest of bit-by-bit erasing, a new erasing mechanism by hot hole injection has been proposed for the eSTM cell. It has shown performances and a level of reliability perfectly compatible with the industrial requirements of Flash-NOR applications
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Conference papers on the topic "Bit Erasable"

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Gupta, Mool C., and Forrest Strome. "Performance of an Erasable Organic Dye-Binder Optical Disk Medium." In Optical Data Storage. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/ods.1985.wbb1.

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Write-once optical disks are emerging as an important medium for information storage. They provide high performance (in terms of carrier-to-noise ratio and bit error rates) and long life (~10 years). Extensive work has been published on write-once optical disk media based on organic dye-binder systems. Here we present some performance data for an erasable organic dye-binder optical disk medium.
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Ishibashi, Hiromichi, Mitsuro Moriya, and Takeo Ohta. "Study of phase-change erasable sample-servo optical disk with bit-capsule groove." In Optical Data Storage Topical Meeting, edited by Donald B. Carlin, David B. Kay, and Alfred A. Franken. SPIE, 1992. http://dx.doi.org/10.1117/12.137568.

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Ho, Z. Z., G. Savant, J. Hirsh, and T. Jannson. "Multilayer 3-D optical memory based on a polarization vectorial recording medium." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/oam.1992.tuvv6.

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A high density erasable 3-D memory system based on a polarization vectorial holographic (PVH) dye-polymer medium as a novel approach to real-time rewritable optical storage was investigated. The polymer composite exhibits nondestructive reading at 633 nm, permitting unlimited number of reads per write. A multilayer page-oriented holographic memory architecture having five-dimensional bit addressing was evaluated. High resolution, high storage density, and superior recording data rates are achieved with random and highly parallel addressing. The material response of 80 ps was demonstrated, with potential to attain submicrosecond speed. With fatigue performance of over 1 million cycles measured, the material seems to be quite suitable for erasable all-optic, high density 3-D memory.
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Day, Daniel, Min Gu, and Andrew Smallridge. "High-density erasable three-dimensional optical bit data storage in a photorefractive polymer using two-photon excitation." In International Symposium on Optical Memory and Optical Data Storage. SPIE, 1999. http://dx.doi.org/10.1117/12.997603.

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Nanto, H., Y. Douguchi, J. Nishishita, M. Kadota, N. Kashiwagi, T. Shinkawa, and S. Nasu. "A Novel Erasable and Rewritable Optical Memory Utilizing Photostimulated Luminescence in Eu and Sm Co-doped SrS Phosphor Ceramics." In Symposium on Optical Memory. Washington, D.C.: Optica Publishing Group, 1996. http://dx.doi.org/10.1364/isom.1996.otub.9.

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New systems to optical memory, which are based on the photostimulated luminescence (PSL) phenomenon in electron trapping phosphor materials for optical storage, have been studied in the fields of optical parallel Boolean logic operation [1], two-dimensional optical associative memory [2] and optical neural networks [3,4], The electron trapping phosphor materials can emit different output photons that correlate spatially in intensity with input photons. Consequently, the phosphor materials can be used to store optical information as trapped electrons and the information stored can be read out by a laser beam scanning of the phosphor material. The unique features of the electron trapping phosphor materials that exhibit the PSL phenomenon provide the potential for high bit storage densities, high data transfer, and fast recovery speeds. [5] Important characteristics of a good electron trapping phosphor materials for optical memory are high PSL brightness for low noise, short luminescent lifetime for minimum readout time, and low light scattering for high bit densities. Especially, the electron trapping phosphor materials using transparent thin film provides an efficient PSL and low light scattering.
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Evans, K. E., A. N. Burgess, and S. J. Abbott. "Finite Element Modelling of Laser-Induced Hole Formation in Optical Storage Media." In Optical Data Storage. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/ods.1987.thd1.

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Video discs and compact discs are examples of modern optical storage techniques that use lasers to read from permanently recorded storage media, capable of storing large quantities (gigabytes) of digitised information. Current research is involved in the development of archival media ('Write-Once-Read-Many' times systems) and erasable optical media. Here locallised laser heating is used to create small pits (for WORM systems) or a locallised reversible change in the medium (in erasable systems) to form the basic 'bit' of information. The aim is to determine the optimum combination of materials for this process to produce the highest data density, minimum error rate, and maximum read and write rates. This will be achieved by accurately controlling pit size, increasing the sensitivity of the film to pit formation and providing a sharp threshold response to the laser. Due to the extreme difficulties in observing the process of pit formation, which involves a micron-sized laser beam creating temperatures of over 1000°C in a time of less than 100 nsecs, finite element methods are required to model the process (a) to try and detect the process of pit formation (b) to optimise the combination of materials used. Currently, practical systems use either a tellurium alloy or an organic dye on a polycarbonate or PMMA substrate. Various complex layer structures have been tried to maximise energy absorption in the storage medium. A finite element model will be described which has been used to solve the transient thermal conduction equation, with a time dependent heat source, to accurately model the temperature variation in a number of different storage media. The resultant temperatures are then used to determine stress distributions in the storage medium. The variation of temperature and stress is required to determine the mechanism of pit formation in the medium. It will be shown how a better understanding of the processes involved can lead to a significant change in the materials used by a close examination of the most important physical parameters.
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Hong, Tzung-Pei, Lu-Hung Chen, Shyue-Liang Wang, Chun-Wei Lin, and Bay Vo. "Quasi-erasable itemset mining." In 2017 IEEE International Conference on Big Data (Big Data). IEEE, 2017. http://dx.doi.org/10.1109/bigdata.2017.8258125.

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Hong, Tzung-Pei, Chia-Che Li, Shyue-Liang Wang, and Jerry Chun-Wei Lin. "Reducing Database Scan in Maintaining Erasable Itemsets from Product Deletion." In 2018 IEEE International Conference on Big Data (Big Data). IEEE, 2018. http://dx.doi.org/10.1109/bigdata.2018.8621965.

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Hong, Tzung-Pei, Jia-Xiang Li, Yu-Chuan Tsai, and Wei-Ming Huang. "Unified Temporal Erasable Itemset Mining with a Lower-Bound Strategy." In 2022 IEEE International Conference on Big Data (Big Data). IEEE, 2022. http://dx.doi.org/10.1109/bigdata55660.2022.10020440.

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Ohara, Shunji, Chikashi Inokuchi, Tadashige Furutani, Takashi Ishida, Kenzo Ishibashi, Akira Kurahashi, and Tornio Yoshida. "Compatibility test for Phase Change Erasable and WORM media in a Multi-function drive." In Optical Data Storage. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/ods.1991.tua5.

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Optical media based on amorphous and crystal phase change have been studied in several laboratories[1][2]. A WORM (Write Once Read Many times) drive is commercially available today[3]. Regarding PCE (Phase Change Erasable) media, recent works have made advanced progress [4][5]. The optical data memory using PCE media has two big features. One is that it has one pass direct overwriting function. It is expected to improve the performance of the current rewritable optical memory. The another is that it has a high performance of handling both PCE and WORM media intrinsically, so-called a multi-function drive. In this paper, we will discuss how to have realized a multi -function drive and report compatibility test results among PCE and WORM media measured by the drive.
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