Journal articles: 'Bipolar switching'

1

Symonds, R. L. "‘Switching’ in bipolar disorder." Advances in Psychiatric Treatment 12, no. 4 (July 2006): 306–7. http://dx.doi.org/10.1192/apt.12.4.306.

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2

Akiskal, H. S. "Temperament and bipolar switching." European Neuropsychopharmacology 6 (June 1996): 218. http://dx.doi.org/10.1016/0924-977x(96)88329-5.

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3

Silard, Andrei P., and Gabriel Nani. "TILBW Bipolar Power Switching Transistor." Japanese Journal of Applied Physics 28, Part 2, No. 3 (March 20, 1989): L356—L357. http://dx.doi.org/10.1143/jjap.28.l356.

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4

Lange-Asschenfeldt, C., I. Blaeser, and T. Supprian. "Bipolar Switching after Carbamazepine Withdrawal." Pharmacopsychiatry 40, no. 2 (March 2007): 86–87. http://dx.doi.org/10.1055/s-2007-970140.

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5

Ryu, Hojeong, Beomjun Park, and Sungjun Kim. "Bias Polarity Dependent Threshold Switching and Bipolar Resistive Switching of TiN/TaOx/ITO Device." Metals 11, no. 10 (September 26, 2021): 1531. http://dx.doi.org/10.3390/met11101531.

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In this work, we demonstrate the threshold switching and bipolar resistive switching with non-volatile property of TiN/TaOx/indium tin oxide (ITO) memristor device. The intrinsic switching of TaOx is preferred when a positive bias is applied to the TiN electrode in which the threshold switching with volatile property is observed. On the other hand, indium diffusion could cause resistive switching by formation and rupture of metallic conducting filament when a positive bias and a negative bias are applied to the ITO electrode for set and reset processes. The bipolar resistive switching occurs both with the compliance current and without the compliance current. The conduction mechanism of low-resistance state (LRS) and high-resistance state (HRS) are dominated by Ohmic conduction and Schottky emission, respectively. Finally, threshold switching and bipolar resistive switching are verified by pulse operation.

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Ryu, Hojeong, and Sungjun Kim. "Irregular Resistive Switching Behaviors of Al2O3-Based Resistor with Cu Electrode." Metals 11, no. 4 (April 17, 2021): 653. http://dx.doi.org/10.3390/met11040653.

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In this work, we examined the irregular resistive switching behaviors of a complementary metal–oxide–semiconductor (CMOS)-compatible Cu/Al2O3/Si resistor device. X-ray photoelectron spectroscopy (XPS) analysis confirmed the chemical and material compositions of a Al2O3 thin film layer and Si substrate. Bipolar resistive switching occurred in a more stable manner than the unipolar resistive switching in the device did. Five cells were verified over 50 endurance cycles in terms of bipolar resistive switching, and a good retention was confirmed for 10,000 s in the high-resistance state (HRS) and the low-resistance state (LRS). Both high reset current (~10 mA) and low reset current (<100 μA) coexisted in the bipolar resistive switching. We investigated nonideal resistive switching behaviors such as negative-set and current overshoot, which could lead to resistive switching failure.

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7

Post, Robert M., Kirk D. Denicoff, Gabriele S. Leverich, and Mark A. Frye. "Drug-Induced Switching in Bipolar Disorder." CNS Drugs 8, no. 5 (November 1997): 352–65. http://dx.doi.org/10.2165/00023210-199708050-00002.

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8

Xu, Qingyu, Xueyong Yuan, Yanqiang Cao, Lifang Si, and Di Wu. "Bipolar resistive switching in BiFe0.95Mn0.05O3 films." Solid State Communications 152, no. 22 (November 2012): 2036–39. http://dx.doi.org/10.1016/j.ssc.2012.08.023.

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9

Pradel, Annie, Nathalie Frolet, Michel Ramonda, Andrea Piarristeguy, and Michel Ribes. "Bipolar resistance switching in chalcogenide materials." physica status solidi (a) 208, no. 10 (June 15, 2011): 2303–8. http://dx.doi.org/10.1002/pssa.201000767.

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10

Akiskal, Hagop S. "Switching From 'Unipolar' to Bipolar II." Archives of General Psychiatry 52, no. 2 (February 1, 1995): 114. http://dx.doi.org/10.1001/archpsyc.1995.03950140032004.

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11

Rosack, Jim. "`Switching' Risks Minimal In Bipolar Treatment." Psychiatric News 39, no. 19 (October 2004): 22. http://dx.doi.org/10.1176/pn.39.19.0390022.

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12

Jianwei Zhao, Jianwei Zhao, Fengjuan Liu Fengjuan Liu, Jian Sun Jian Sun, Haiqin Huang Haiqin Huang, Zuofu Hu Zuofu Hu, and Xiqing Zhang Xiqing Zhang. "Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices." Chinese Optics Letters 10, no. 1 (2012): 013102–13105. http://dx.doi.org/10.3788/col201210.013102.

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13

Nardi, Federico, Simone Balatti, Stefano Larentis, David C. Gilmer, and Daniele Ielmini. "Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory." IEEE Transactions on Electron Devices 60, no. 1 (January 2013): 70–77. http://dx.doi.org/10.1109/ted.2012.2226728.

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14

Du, Huiying, Jinghong Chen, Meilin Tu, Songwen Luo, Shangdong Li, Shuoguo Yuan, Tianxun Gong, Wen Huang, Wenjing Jie, and Jianhua Hao. "Transition from nonvolatile bipolar memory switching to bidirectional threshold switching in layered MoO3 nanobelts." Journal of Materials Chemistry C 7, no. 39 (2019): 12160–69. http://dx.doi.org/10.1039/c9tc03842f.

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15

Kim, Sungjun, Yao-Feng Chang, Min-Hwi Kim, Tae-Hyeon Kim, Yoon Kim, and Byung-Gook Park. "Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory." Materials 10, no. 5 (April 26, 2017): 459. http://dx.doi.org/10.3390/ma10050459.

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16

Fathoni, Fathoni. "RANCANG BANGUN PERANGKAT PEMBANGKIT PWM BIPOLAR." JURNAL ELTEK 16, no. 1 (August 21, 2018): 14. http://dx.doi.org/10.33795/eltek.v16i1.83.

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Electrical power settings, both AC and DC can be done by linear or switching. Controlled loads may be motors, heating elements or incandescent lamps. Generally the efficiency of load power control by way of switching is better than linear way so the way switching is widely used today. Switching also allows for automatic, remote and wireless control In load power management system with microcontroller, PWM generator circuit output is used for control of power switch. The output pulse can be TTL standard or with lower amplitude and on the control of the H bridge circuit required bipolar PWM with additional dead band on each side of the pulse ride. The bipolar PWM generator designed in this study has an output with TTL standard with a dead band circuit and a short circuit protection for VCC = 5 volts and a ground path, Testing with no load and short circuit in low and high output states is as follows. VOL(min) = 0.4 volts, VOH(max) = 4.2 volts. The short circuit of output to high GND is 100 mA and short circuit current to VCC path at low output is 90 mA, The output frequency of bipolar pulses is, 50, 100, 1k, 10k and 20k Hz with 10μs dead band

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17

Borca, Bogdana, Verena Schendel, Rémi Pétuya, Ivan Pentegov, Tomasz Michnowicz, Ulrike Kraft, Hagen Klauk, et al. "Bipolar Conductance Switching of Single Anthradithiophene Molecules." ACS Nano 9, no. 12 (November 23, 2015): 12506–12. http://dx.doi.org/10.1021/acsnano.5b06000.

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18

HELWICK, CAROLINE. "Antipsychotics May Protect Against Switching in Bipolar." Clinical Psychiatry News 37, no. 10 (October 2009): 16. http://dx.doi.org/10.1016/s0270-6644(09)70348-0.

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19

Lai, Chun-Hung, Chih-Yi Liu, and Hsiwen Yang. "Bipolar Resistance Switching Characteristics in Zirconium Oxide." Ferroelectrics 457, no. 1 (January 2013): 146–52. http://dx.doi.org/10.1080/00150193.2013.859064.

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20

Sahu, Dwipak Prasad, and S. Narayana Jammalamadaka. "Bipolar resistive switching in HoCrO3 thin films." Nanotechnology 31, no. 35 (June 17, 2020): 355202. http://dx.doi.org/10.1088/1361-6528/ab9328.

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21

Gomez-Marlasca, F., N. Ghenzi, M. J. Rozenberg, and P. Levy. "Understanding electroforming in bipolar resistive switching oxides." Applied Physics Letters 98, no. 4 (January 24, 2011): 042901. http://dx.doi.org/10.1063/1.3537957.

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22

Lin, Xi, Adnan Younis, Xinrun Xiong, Kejun Dong, Dewei Chu, and Sean Li. "Bipolar resistive switching characteristics in LaTiO3 nanosheets." RSC Advances 4, no. 35 (2014): 18127. http://dx.doi.org/10.1039/c4ra01626b.

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23

Tsunoda, K., Y. Fukuzumi, J. R. Jameson, Z. Wang, P. B. Griffin, and Y. Nishi. "Bipolar resistive switching in polycrystalline TiO2 films." Applied Physics Letters 90, no. 11 (March 12, 2007): 113501. http://dx.doi.org/10.1063/1.2712777.

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24

Bogusz, Agnieszka, Danilo Bürger, Ilona Skorupa, Oliver G. Schmidt, and Heidemarie Schmidt. "Bipolar resistive switching in YMnO3/Nb:SrTiO3pn-heterojunctions." Nanotechnology 27, no. 45 (October 3, 2016): 455201. http://dx.doi.org/10.1088/0957-4484/27/45/455201.

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25

Dias, C., H. Lv, R. Picos, P. Aguiar, S. Cardoso, P. P. Freitas, and J. Ventura. "Bipolar resistive switching in Si/Ag nanostructures." Applied Surface Science 424 (December 2017): 122–26. http://dx.doi.org/10.1016/j.apsusc.2017.01.140.

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26

Xu, Qingyu, Xueyong Yuan, and Mingxiang Xu. "The Bipolar Resistive Switching in BiFeO3 Films." Journal of Superconductivity and Novel Magnetism 25, no. 4 (December 21, 2011): 1139–44. http://dx.doi.org/10.1007/s10948-011-1380-5.

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27

Attia, Hussain, Hang Seng Che, Tan Kheng Suan Freddy, and Ahmad Elkhateb. "Bipolar and unipolar schemes for confined band variable switching frequency PWM based inverter." International Journal of Electrical and Computer Engineering (IJECE) 11, no. 5 (October 1, 2021): 3763. http://dx.doi.org/10.11591/ijece.v11i5.pp3763-3771.

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The single phase inverter performance through the unipolar and bipolar strategies has been previously analyzed based on the constant switching frequency pulse width modulation (CSFPWM). However, the confined band variable switching frequency PWM (CB-VSFPWM) is currently proposed as a new variable switching frequency PWM technique through unipolar strategy to facilitate the design of high order filter, to reduce the switching losses, and to reduce the current total harmonics distortion (THD) as well. To evaluate the performance of a single phase inverter based on the CBVSFPWM through bipolar strategy, this paper presents a comparative study of the CB-VSFPWM based inverter performance using the unipolar PWM and the bipolar PWM strategies. The study adopts MATLAB/Simulink to simulate the inverter and to analyze the simulation results in terms of harmonics spectrum, total harmonic distortion (THD), and fundamental components. The analysis of the study results gives an indication about the appropriate type of CB-VSFPWM strategy (unipolar PWM or bipolar PWM) to guarantee the desired performance of the connected inverter in terms of the electrical grid standards like THD, and harmonics spectrum of the inverter current.

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28

Горшков, О. Н., В. Г. Шенгуров, С. А. Денисов, В. Ю. Чалков, И. Н. Антонов, А. В. Круглов, М. Е. Шенина, В. Е. Котомина, Д. О. Филатов, and Д. А. Серов. "Резистивное переключение в мемристорах на основе гетероструктур Ag/Ge/Si." Письма в журнал технической физики 46, no. 2 (2020): 44. http://dx.doi.org/10.21883/pjtf.2020.02.48953.18075.

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It is shown that two modes of resistive switching – bipolar and volatile unipolar – are peculiar for the Ag/Ge/Si structures with germinating dislocations in the germanium layer. In this modes the structures have stable states of electric current with ION/IOFF ~1.5–2.7. The volatile unipolar type of switching can be caused by the capture of charge carriers to deep levels associated with lattice defects in the Ge film of the memristor. At the same time, bipolar switching is associated with the drift of Ag+ ions along germinating dislocations.

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29

Hu, Cheng, and Yong Dan Zhu. "Poly-NiO/Nb:SrTiO₃ Based Resistive Switching Device for Nonvolatile Random Access Memory." Advanced Materials Research 605-607 (December 2012): 1944–47. http://dx.doi.org/10.4028/www.scientific.net/amr.605-607.1944.

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The bipolar resistive switching characteristic of Ag/poly-NiO/Nb:SrTiO3/In device has been investigated in this letter. The current-voltage characteristics of the device shows reproducible and pronounced bipolar resistive switching after 2V forming process and the resistive switching ratio RHRS/RLRS can reach 104 at the read voltage -0.5V. Multilevel memories can be realized by changing the max reverse voltages and show well retention characteristic even after several sweeping cycles. The results have been discussed in terms of carrier injection process via defects at the interface of the poly-NiO and Nb:SrTiO3.

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30

Chakraborty, Avijit, Pradip Kumar Sadhu, Kallol Bhaumik, Palash Pal, and Nitai Pal. "Behaviour of a High Frequency Parallel Quasi Resonant Inverter Fitted Induction Heater with Different Switching Frequencies." International Journal of Electrical and Computer Engineering (IJECE) 6, no. 2 (April 1, 2016): 447. http://dx.doi.org/10.11591/ijece.v6i2.pp447-457.

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<p>This paper investigates the behavior of a high frequency parallel quasiresonant<br />inverter fitted domestic induction heater with different switching frequencies. The power semiconductor switch Insulated Gate Bipolar Junction Transistor (IGBT) is incorporated in this high frequency inverter that can operate under ZVS and ZCS conditions during the switching operations at certain switching frequency to reduce switching losses. The proposed induction heating system responds to three different switching frequencies with providing different results. An Insulated Gate Bipolar Junction Transistor (IGBT) provides better efficiency and faster switching operations. After the complete study of the proposed induction heating system at the selected switching frequencies, the results are compared and it is decided that most reliable, efficient and effective operations from the proposed induction heater can be obtained if the switching frequency is selected slightly above the resonant frequency of the tank circuit of the resonant inverter. The proposed scheme is analyzed using Power System<br />Simulator (PSIM) environment.</p>

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31

Salaoru, Iulia, and Christos Christodoulos Pantelidis. "Electrical Re-Writable Non-Volatile Memory Device Based on PEDOT:PSS Thin Film." Micromachines 11, no. 2 (February 10, 2020): 182. http://dx.doi.org/10.3390/mi11020182.

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In this research, we investigate the memory behavior of poly(3,4 ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) cross bar structure memory cells. We demonstrate that Al/PEDOT:PSS/Al cells fabricated elements exhibit a bipolar switching and reproducible behavior via current–voltage, endurance, and retention time tests. We ascribe the physical origin of the bipolar switching to the change of the electrical conductivity of PEDOT:PSS due to electrical field induced dipolar reorientation.

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32

Muller, R., C. Krebs, L. Goux, D. J. Wouters, J. Genoe, P. Heremans, S. Spiga, and M. Fanciulli. "Bipolar Resistive Electrical Switching of CuTCNQ Memories Incorporating a Dedicated Switching Layer." IEEE Electron Device Letters 30, no. 6 (June 2009): 620–22. http://dx.doi.org/10.1109/led.2009.2020521.

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33

Chow, T. Paul. "SiC Bipolar Power Devices." MRS Bulletin 30, no. 4 (April 2005): 299–304. http://dx.doi.org/10.1557/mrs2005.77.

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AbstractThe successful commercialization of unipolar Schottky rectifiers in the 4H polytype of silicon carbide has resulted in a market demand for SiC high-power switching devices. This article reviews recent progress in the development of high-voltage 4H-SiC bipolar power electronics devices.We also present the outstanding material and processing challenges, reliability concerns, and future trends in device commercialization.

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34

Das, Nayan C., Se-I. Oh, Jarnardhanan R. Rani, Sung-Min Hong, and Jae-Hyung Jang. "Multilevel Bipolar Electroforming-Free Resistive Switching Memory Based on Silicon Oxynitride." Applied Sciences 10, no. 10 (May 19, 2020): 3506. http://dx.doi.org/10.3390/app10103506.

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Resistive random-access memory (RRAM) devices are fabricated by utilizing silicon oxynitride (SiOxNy) thin film as a resistive switching layer. A SiOxNy layer is deposited on a p+-Si substrate and capped with a top electrode consisting of Au/Ni. The SiOxNy-based memory device demonstrates bipolar multilevel operation. It can switch interchangeably between all resistance states, including direct SET switching from a high-resistance state (HRS) to an intermediate-resistance state (IRS) or low-resistance state (LRS), direct RESET switching process from LRS to IRS or HRS, and SET/RESET switching from IRS to LRS or HRS by controlling the magnitude of the applied write voltage signal. The device also shows electroforming-free ternary nonvolatile resistive switching characteristics having RHRS/RIRS > 10, RIRS/RLRS > 5, RHRS/RLRS > 103, and retention over 1.8 × 104 s. The resistive switching mechanism in the devices is found to be combinatory processes of hopping conduction by charge trapping/detrapping in the bulk SiOxNy layer and filamentary switching mode at the interface between the SiOxNy and Ni layers.

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35

Parker, Gordon, Gordon Parker, and Kay Parker. "Which Antidepressants Flick the Switch?" Australian & New Zealand Journal of Psychiatry 37, no. 4 (August 2003): 464–68. http://dx.doi.org/10.1046/j.1440-1614.2003.01207.x.

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Objective: The Black Dog Institute seeks to address issues of relevance to the clinical management of those with a mood disorder. This overview considers the capacity of antidepressant drugs, and particularly the new classes, to induce manic switching in depressed patients. Method: Relevant literature is reviewed. Results: It is unclear whether antidepressant drugs from any of the classes induce switching in unipolar depressed patients. In bipolar depressed patients, the broad-spectrum tricyclic and monoamine oxidase inhibitor drugs present a clear risk of switching, the selective serotonin re-uptake inhibitors do not appear (at standard doses) to increase the risk, while the capacity of the dual action (serotonergic and noradrenergic) drugs to induce switching remains unestablished but may be slight. Conclusions: As switching induced by narrow action antidepressants does not appear to present a substantive causal risk, clinicians can have confidence in prescribing certain antidepressants for managing bipolar depression, and without any necessity to first prescribe a mood stabilizer to pre-empt switching.

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36

Lin, Jian-Yang, and Chia-Lin Wu. "Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15Film." Advances in Materials Science and Engineering 2014 (2014): 1–7. http://dx.doi.org/10.1155/2014/425085.

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The electrical conduction and bipolar switching properties of resistive random access memory (RRAM) cells with transparent calcium bismuth titanate (CaBi4Ti4O15—CBTi144) thin films were investigated. Experimentally, the (119)-oriented CBTi144 thin films were deposited onto the ITO/glass substrates by RF magnetron sputtering followed by rapid thermal annealing (RTA) at a temperature range of 450–550°C. The surface morphologies and crystal structures of the CBTi144 thin films were examined by using field-emission scanning electron microscopy and X-ray diffraction measurements. The on/off ratio and switching behaviors of the transparent Al/CBTi144/ITO/glass RRAM devices were further discussed in this work.

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37

Das, Nayan C., Minjae Kim, Jarnardhanan R. Rani, Sung-Min Hong, and Jae-Hyung Jang. "Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride." Micromachines 12, no. 9 (August 30, 2021): 1049. http://dx.doi.org/10.3390/mi12091049.

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Electroforming-free resistive switching random access memory (RRAM) devices employing magnesium fluoride (MgFx) as the resistive switching layer are reported. The electroforming-free MgFx based RRAM devices exhibit bipolar SET/RESET operational characteristics with an on/off ratio higher than 102 and good data retention of >104 s. The resistive switching mechanism in the Ti/MgFx/Pt devices combines two processes as well as trap-controlled space charge limited conduction (SCLC), which is governed by pre-existing defects of fluoride vacancies in the bulk MgFx layer. In addition, filamentary switching mode at the interface between the MgFx and Ti layers is assisted by O–H group-related defects on the surface of the active layer.

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38

Grande, Iria, Miquel Bernardo, Julio Bobes, Jerónimo Saiz-Ruiz, Cecilio Álamo, and Eduard Vieta. "Antipsychotic switching in bipolar disorders: a systematic review." International Journal of Neuropsychopharmacology 17, no. 03 (October 21, 2013): 497–507. http://dx.doi.org/10.1017/s1461145713001168.

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39

Krishna Murthy, J., and A. Venimadhav. "Magnetization reversal phenomena and bipolar switching in La1.9Bi0.1FeCrO6." Physica B: Condensed Matter 448 (September 2014): 162–66. http://dx.doi.org/10.1016/j.physb.2014.04.020.

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40

Ebrahim, Rabi, Naijuan Wu, and Alex Ignatiev. "Multi-mode bipolar resistance switching in CuxO films." Journal of Applied Physics 111, no. 3 (February 2012): 034509. http://dx.doi.org/10.1063/1.3682086.

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41

Li, Qiang, Zhina Gong, Shuai Wang, Jiangteng Wang, Ye Zhang, and Feng Yun. "Bipolar resistive switching behaviors of ITO nanowire networks." AIP Advances 6, no. 2 (February 2016): 025222. http://dx.doi.org/10.1063/1.4943216.

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42

Xu, Qingyu, Zheng Wen, and Di Wu. "Bipolar and unipolar resistive switching in Zn0.98Cu0.02O films." Journal of Physics D: Applied Physics 44, no. 33 (August 3, 2011): 335104. http://dx.doi.org/10.1088/0022-3727/44/33/335104.

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43

Shuai, Yao, Shengqiang Zhou, Danilo Bürger, Manfred Helm, and Heidemarie Schmidt. "Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt." Journal of Applied Physics 109, no. 12 (June 15, 2011): 124117. http://dx.doi.org/10.1063/1.3601113.

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44

Lazarus, M. J. "Profiled current drive for pulsed bipolar transistor switching." Electronics Letters 29, no. 11 (May 27, 1993): 943–44. http://dx.doi.org/10.1049/el:19930628.

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45

Li, Kun, Zheng Wen, Di Wu, Haifa Zhai, and Aidong Li. "Bipolar resistive switching based on SrTiO3/YBa2Cu3O7epi-layers." Journal of Physics D: Applied Physics 46, no. 3 (December 10, 2012): 035308. http://dx.doi.org/10.1088/0022-3727/46/3/035308.

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46

Bruchhaus, Rainer, Ruth Muenstermann, Tobias Menke, Christoph Hermes, Florian Lentz, Robert Weng, Regina Dittmann, and Rainer Waser. "Bipolar resistive switching in oxides: Mechanisms and scaling." Current Applied Physics 11, no. 2 (March 2011): e75-e78. http://dx.doi.org/10.1016/j.cap.2010.10.022.

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47

Krug, Kristine, Emma Brunskill, Antonina Scarna, Guy M. Goodwin, and Andrew J. Parker. "Perceptual switch rates with ambiguous structure-from-motion figures in bipolar disorder." Proceedings of the Royal Society B: Biological Sciences 275, no. 1645 (May 7, 2008): 1839–48. http://dx.doi.org/10.1098/rspb.2008.0043.

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Slowing of the rate at which a rivalrous percept switches from one configuration to another has been suggested as a potential trait marker for bipolar disorder. We measured perceptual alternations for a bistable, rotating, structure-from-motion cylinder in bipolar and control participants. In a control task, binocular depth rendered the direction of cylinder rotation unambiguous to monitor participants' performance and attention during the experimental task. A particular direction of rotation was perceptually stable, on average, for 33.5 s in participants without psychiatric diagnosis. Euthymic, bipolar participants showed a slightly slower rate of switching between the two percepts (percept duration 42.3 s). Under a parametric analysis of the best-fitting model for individual participants, this difference was statistically significant. However, the variability within groups was high, so this difference in average switch rates was not big enough to serve as a trait marker for bipolar disorder. We also found that low-level visual capacities, such as stereo threshold, influence perceptual switch rates. We suggest that there is no single brain location responsible for perceptual switching in all different ambiguous figures and that perceptual switching is generated by the actions of local cortical circuitry.

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48

Chu, X. L., Z. P. Wu, D. Y. Guo, Y. H. An, Y. Q. Huang, X. C. Guo, W. Cui, P. G. Li, L. H. Li, and W. H. Tang. "Interface induced transition from bipolar resistive switching to unipolar resistive switching in Au/Ti/GaOx/NiOx/ITO structures." RSC Advances 5, no. 100 (2015): 82403–8. http://dx.doi.org/10.1039/c5ra12762a.

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49

Yu, Hyeongwoo, Minho Kim, Yoonsu Kim, Jeongsup Lee, Kyoung-Kook Kim, Sang-Jun Choi, and Soohaeng Cho. "Al-doped ZnO as a switching layer for transparent bipolar resistive switching memory." Electronic Materials Letters 10, no. 2 (March 2014): 321–24. http://dx.doi.org/10.1007/s13391-013-3225-9.

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50

Nguyen, Hai Hung, Hanh Kieu Thi Ta, Sungkyun Park, Thang Bach Phan, and Ngoc Kim Pham. "Resistive switching effect and magnetic properties of iron oxide nanoparticles embedded-polyvinyl alcohol film." RSC Advances 10, no. 22 (2020): 12900–12907. http://dx.doi.org/10.1039/c9ra10101b.

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Journal articles on the topic 'Bipolar switching'

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