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Dissertations / Theses on the topic 'Bipolar switching'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Chin, Shaoan. "MOS-bipolar composite power switching devices." Diss., Virginia Polytechnic Institute and State University, 1985. http://hdl.handle.net/10919/54275.

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Two MOS-Bipolar composite power semiconductor switching devices are proposed and experimentally demonstrated. These devices feature high voltage and high current capabilities, fast switching speeds, simple gate drive requirements, savings in chip area, reverse bias second breakdown ruggedness and large safe operating areas. Application characteristics of the devices for high frequency power inverter circuits are discussed. Monolithic integration of the two composite devices are also proposed.<br>Ph. D.

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2

Rabah, Kefa V. O. "A study of switching of MOS-bipolar power transistor hybrids." Thesis, Lancaster University, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.314432.

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3

Yang, Xin. "Controlled IGBT switching for power electronics building block." Thesis, University of Cambridge, 2014. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708442.

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4

Nicholls, Jonathan Christopher. "Soft-switching performance analysis of the clustered insulated gate bipolar transistor (CIGBT)." Thesis, De Montfort University, 2009. http://hdl.handle.net/2086/2396.

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The use of Insulated Gate Bipolar Transistors (IGBT) have enabled better switching performance than the Metal Oxide Semiconductor Field effect Transistor (MOSFET) in medium to high power applications due to their lower on-state power loss and higher current densities. The power ratings of IGBTs are slowly increasing and are envisaged to replace thyristors in medium power applications such as High Voltage Direct Current (HVDC) inverter systems and traction drive controls. Devices such as the MOS Controlled Thyristor (MCT) and Emitter Switched Thyristor (EST) were developed in an effort to furth

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5

Hossin, Mohamad Abdalla. "Evaluation of gallium arsenide Schottky Gate Bipolar Transistor for high-voltage power switching applications." Thesis, University of Newcastle Upon Tyne, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.263129.

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6

Gambetta, Daniele Morco. "Sensorless technique for BLDC motors." University of Southern Queensland, Faculty of Engineering and Surveying, 2006. http://eprints.usq.edu.au/archive/00001427/.

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Commutation is a fundamental feature of all DC machines. In conventional DC machines the commutation function is performed by the commutator and brushes. These act as both position sensors and switches. The mechanical commutator has obvious disadvantages. Overcoming those disadvantages has been a major reason behind the development of brushless DC (BLDC) machines. In brushless DC machines commutation is performed by power electronic devices forming part of an inverter bridge. However, switching of the power electronic devices has to be synchronised with rotor position. Position sensing is ther

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7

Hatem, Firas Odai. "Bipolar resistive switching of bi-layered Pt/Ta2O5/TaOx/Pt RRAM : physics-based modelling, circuit design and testing." Thesis, University of Nottingham, 2017. http://eprints.nottingham.ac.uk/39786/.

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Over the last few years, the non-volatile memories (NVM) have been dominating the research of the storage elements. The resistance random-access memory (RRAM) and the memristor that employs the resistive switching (RS) mechanism appear to be potential candidates for NVM. Among the RS materials that were reported is the TaOx which showed surprising RS performance. This oxide material has been widely used to construct a metal-insulator-semiconductor-metal (MISM) RRAM which can be referred to as bi-layered RRAM. This bi-layered RRAM consists of TaOx as a bulk material and Ta2O5 as an insulator la

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8

Eio, Samson. "Current Injection Techniques to Optimise the Switching Transients of Power Diodes. Thyristors and Insulated Gate Bipolar Transistors (IGBTs)." Thesis, Staffordshire University, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.522131.

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9

You, Tiangui. "Resistive switching in BiFeO3-based thin films and reconfigurable logic applications." Doctoral thesis, Universitätsbibliothek Chemnitz, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-212501.

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The downscaling of transistors is assumed to come to an end within the next years, and the semiconductor nonvolatile memories are facing the same physical downscaling challenge. Therefore, it is necessary to consider new computing paradigms and new memory concepts. Resistive switching devices (also referred to as memristive switches) are two-terminal passive device, which offer a nonvolatile switching behavior by applying short bias pulses. They have been considered as one of the most promising candidates for next generation memory and nonvolatile logic applications. They provide the possibili

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10

Perez, Stéphanie. "Etude des effets de dose et débit de dose sur des amplificateurs à technologies bipolaires. Mise en application sur le satellite Robusta." Thesis, Montpellier 2, 2011. http://www.theses.fr/2011MON20075/document.

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L'agressivité de l'environnement radiatif spatial constitue une cause majeure de défaillance des composants et systèmes embarqués sur les satellites. Les transistors bipolaires sont sensibles au rayonnement ionisant et peuvent présenter un effet de débit de dose (ELDRS). Une plus forte dégradation est alors observée à faible débit de dose. Les normes actuelles de test ne permettent pas de prendre en compte entièrement cette sensibilité au débit. La nouvelle méthode de test dite des Débits commutés prend en compte cet effet d'ELDRS. Une charge utile développée sur le satellite Robusta et présen

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11

Olsson, Johanna. "Implementation of Nodes in HVDC Grids." Thesis, KTH, Skolan för elektroteknik och datavetenskap (EECS), 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-293884.

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This project is made for a deeper understanding ofhow frequency and amplitude of the waves that create the controlwave in a Pulse Width Modulated 2-level inverter affect the powerquality and power losses. The results were that a high frequencyreduces the Total Harmonic Distortion but increases the powerloss. The amplitude, however, reduces both the Total HarmonicDistortion and the power loss as it increases. All the analyseswere done in a simulation program called Simulink. The resultscan be applied when improving High Voltage Direct Currentinverters to develop a functional High Voltage Direct

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12

Claudio-Sanchez, Abraham. "Étude comportementale des IGBT dans les divers modes de commutation." Grenoble INPG, 1995. http://www.theses.fr/1995INPG0165.

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Aujourd'hui l'evolution technologique constante des convertisseurs de puissance requiert une connaissance des composants de plus en plus approfondie. Les travaux presentes dans ce memoire de these concernent le tgb (igbt). On propose deux moyens d'analyse et de caracterisation differents, l'un experimental, l'autre utilisant une modelisation simplifiee ou douce. L'approche experimentale conduit a la realisation d'un veritable simulateur analogique dedie a l'electronique de puissance (saep). Il permet la maitrise et la variation independante de tous les parametres externes au tgb de maniere rep

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13

Lefebvre, Stéphane. "Contribution à la caractérisation de l'IGBT en commutation à zéro de courant." Cachan, Ecole normale supérieure, 1994. http://www.theses.fr/1994DENS0009.

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Cette étude analyse la commutation de blocage d'un igbt utilise en commutation quasi-résonnante a zéro de courant. Deux igbt de structure technologique différente ont été étudiés, le premier est à base non homogène et a couche tampon, le second à base homogène et contrôlé d'injection de charges par l'émetteur. L'évolution de la charge stockée dans la base du transistor bipolaire interne au blocage est suivie et analysée à l'aide de simulations et d'expérimentations. Différents éléments interviennent sur l'évacuation de la charge stockée donc sur les pertes au blocage, qu'ils soient propres au

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14

Lembeye, Yves. "Métrologie de la commutation de puissance rapide : contribution à la caractérisation et à la recherche d'un modèle d'IGBT." Phd thesis, Grenoble INPG, 1997. http://www.theses.fr/1997INPG0010.

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Aujourd'hui l'outil le plus utilisé par les spécialistes d'électronique de puissance est l'oscilloscope numérique. Tant que ces appareils sont utilisés pour vérifier le fonctionnement de circuits, leur précision est, généralement, suffisante. En revanche lorsqu'ils sont utilisés pour caractériser des interrupteurs de puissance, la précision nécessaire ne peut pas être atteinte directement. Les modes opératoires doivent être optimisés et les mesures doivent être corrigées pour obtenir une précision satisfaisante. La mise en place de ces corrections demande du temps et nécessite, souvent, l'util

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15

Zabihi, Sasan. "Flexible high voltage pulsed power supply for plasma applications." Thesis, Queensland University of Technology, 2011. https://eprints.qut.edu.au/48137/1/Sasan_Zabihi_Sheykhrajeh_Thesis.pdf.

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Demands for delivering high instantaneous power in a compressed form (pulse shape) have widely increased during recent decades. The flexible shapes with variable pulse specifications offered by pulsed power have made it a practical and effective supply method for an extensive range of applications. In particular, the release of basic subatomic particles (i.e. electron, proton and neutron) in an atom (ionization process) and the synthesizing of molecules to form ions or other molecules are among those reactions that necessitate large amount of instantaneous power. In addition to the decompositi

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16

Liu, Zi-Jheng, and 劉子正. "Bipolar Resistive Switching Characteristics of ZnO Thin Films." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/13708289730999744303.

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17

You, Ding-Hong, and 尤定宏. "Bipolar resistive switching properties of tellurium dioxide nanostructures." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/s2nyzj.

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碩士<br>國立東華大學<br>物理學系<br>106<br>The tellurium (Te) mico- and nano-structures were synthesized using tube furnace chemical vapor deposition (TFCVD). Then the mico- and nano-structures are annealed in TFCVD in order to produce the tellurium oxide (TeO2) mico- and nano-structures. The morphology of these Te and TeO2 mico- and nano-structures were studied using field-emission scanning electron microscopy (FESEM). The elemental information and electronic structure were revealed using energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS). The crystal structures were st

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18

Huang, Yan-Cheng, and 黃彥程. "Bipolar resistive switching of NiO/HfO double-layer thin films." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/30159625652929499839.

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碩士<br>國立東華大學<br>物理學系<br>104<br>Double-layers of nickel oxide/hafnium dioxides (NiO/HfO2) are synthesized on p-Si wafers using hot-filament metal oxide deposition technique. The thickness of the HfO2 thin films is controlled using the deposition time while the synthesis of NiO are kept same. The morphological feature and thickness of the thin films is observed using field-emission scanning electron microscopy (FESEM) equipped with the backscattering electron (BE) microscopy. The chemical compositions of the bi-layer NiO/HfO2 layer is confirmed using energy dispersive spectroscopy (EDS). Using X

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19

Chen, Chia-Hung, and 陳佳宏. "Unipolar and bipolar resistive switching behaviors in transition metal oxides." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/74016178025359544756.

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碩士<br>國立聯合大學<br>電子工程學系碩士班<br>98<br>TiO2 films deposited by sol-gel method with two process variables are prepared to investigate the bipolar resistive switching (BRS) and unipolar resistive switching (URS) in metal/insulator/metal structure cells, and the difference between BRS and URS is the polarity of the on/off state transition voltage in the current-voltage curves. The first variable is the thermal treatment atmosphere in Ag/TiO2/Pt cells. The cells are URS in air atmosphere and BRS in oxygen atmosphere. The second variable is the bottom electrode materials of TiO2 cells, which are therma

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Yang, Tun-Chih, and 楊敦智. "Oxide-based bipolar selector device for resistive switching memory applications." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/28unfb.

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Chen, Jing-Yuh, and 陳敬育. "Investigation of InP-based Heterojunction Bipolar Transistors and Optoelectronic Switching Devices." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/04342709273737323496.

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博士<br>國立成功大學<br>微電子工程研究所碩博士班<br>93<br>In this dissertation, we have successfully fabricated and demonstrated InP-based heterojunction bipolar transistors (HBTs). The characteristics of InP/InGaAs HBT with a superlattice-collector (SC) structure and InGaAs/InGaAsP composite-collector HBT (CCHBT) are measured and discussed. In addition, two interesting optoelectric switches, a double-barrier-emitter triangular-barrier optoelectronic switch (DTOS) and a bulk-barrier optoelectronic switch (BBOS) with an AlGaAs/δ(n+)-doped sheet/GaAs/InAlGaP collector structure are also investigated and discussed.

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Chen, Ying-Chan, and 陳昱丞. "Bipolar Switching properties of HfO2 based Resistive Random Access Memory Devices." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/50170076258052413995.

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23

Jeng, Huei-Yau, and 鄭暉耀. "Mechanism analysis of bipolar resistive switching in modified DNA biopolymer devices." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/32hp54.

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Yu, Po Lin, and 游柏林. "Bipolar and complementary resistive switching characteristics using Ir/SiO2/TiN structure." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/6xz84h.

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碩士<br>長庚大學<br>電子工程學系<br>104<br>In this thesis, bipolar resistive switching (BRS) characteristics using W/SiO2/TiN and Ir/SiO2/TiN RRAM structure have been investigated. Complementary resistive switching (CRS) using Ir/SiO2/TiN single cell has also been demonstrated. Defective SiO2 switching material is confirmed by X-ray photoelectron spectroscopy. Typical BRS are shown in W/SiO2/TiN stack at the current compliances of 500 µA and 200 µA. Statistical analysis is done by taking randomly 50 devices which confirm that device-to-device switching uniformity is ˃ 75%. In case of W/SiO2/TiN, the low

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Tsai, Ken-Hsiao, and 蔡侃學. "Study on Electrode Materials and Switching Characteristics of HfO2 Bipolar Resistive Memory." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/25086875614433159578.

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碩士<br>國立清華大學<br>電子工程研究所<br>99<br>In this thesis, we discuss on the top electrode effect, current conduction mechanism and annealing effect for the HfO2 based RRAM. At the discussion of the top electrode effect, the W top electrode causes the device to present unipolar operation, but in the W/Ti top electrode present bipolar operation. We may know that top electrode influence the switching characteristic and the polarity of RRAM seriously. Second, the W/Ti/HfO2/TiN device in LRS is the ohmic conduction, but when HRS, the low voltage region (＜0.05V) is the ohmic conduction, the high voltage regi

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Tsai, Wei Che, and 蔡維哲. "Analysis and Design of Single-Phase Bipolar Voltage Switching DC-AC Converter." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/11636705527367712422.

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碩士<br>東海大學<br>電機工程學系<br>100<br>In this paper we present the design and through the TSMC 0.25μm HV process to achieve a single-phase bipolar voltage switching DC-AC inverter. The design of the main structure is PWM bipolar switching technology and a level shift circuit connect to full-bridge circuit to do the DC input voltage to the AC output voltage control. A supply voltage and temperature-independent bandgap reference circuit is used in the inverter that has a output voltage of 9.4V/60Hz of sine wave. The AC sine wave voltage is provided to a small AC LED load. The chip area is 1.9 x 2.05mm2

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Yang, Zi-Jian, and 楊梓鍵. "Study of size-dependent bipolar resistive switching responses of modified biopolymer devices." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/9mh644.

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Kalkert, Christin. "Elektrischer Transport in Manganatschichten: Einfluss von elektrischen Feldern und Licht." Doctoral thesis, 2013. http://hdl.handle.net/11858/00-1735-0000-0001-BABD-5.

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In den Manganaten können kleine Änderungen von externen Feldern die elektronischen, magnetischen und strukturellen Eigenschaften drastisch beeinflussen. In dieser Arbeit wird der Einfluss von elektrischen Feldern und Licht auf den elektrischen Transport in Manganatschichten analysiert. Durch elektrische Feldern können die Widerstände des Manganats remanent und reversibel zwischen verschiedenen Widerstandsniveaus in Abhängigkeit von der Polarität und der Größe des elektrischen Feldes eingestellt werden. Dieser, auch als bipolares Widerstandsschalten bezeichnete Effekt, wird in nanokolumnaren La

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Jiun-JieFang and 方駿杰. "The study of TaOx-based rram bipolar resistive switching process by impedance spectroscopy." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/63zyay.

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碩士<br>國立成功大學<br>材料科學及工程學系<br>103<br>Abstract In this study, the resistance switching mechanisms of Ta/TaOx/Pt and Ta/TaOx/ITO devices are explored based on I-V sweeping curves, characteristic impedance and material characteristics. First, TEM is used to investigate the thickness of the device and crystallinity of the TaOx films. Chemical bonding state in TaOx active layer is observed with XPS. Second, regarding to electrical properties of TaOx-based device, we not only use precision semiconductor parameter analyzer (Agilent 4156C) to get the resistive switching curve of TaOx-based device, but

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Murali, Santosh. "Investigation of bipolar resistive switching in zinc-tin-oxide for resistive random access memory." Thesis, 2011. http://hdl.handle.net/1957/26622.

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Resistive random access memory (RRAM) is a non-volatile memory technology based on resistive switching in a dielectric or semiconductor sandwiched between two different metals. Also known as memristors, these devices are potential candidates for a next-generation replacement for flash memory. In this thesis, bipolar resistive switching is reported for the first time in solution-deposited zinc-tin-oxide (ZTO). The impact of the compliance current on device operation, including the SET and RESET voltages, pre-SET, RESET and post-RESET currents, the resistance ratio between the low and high resis

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Lin, Wei-Jye, and 林偉捷. "Analysis of Switching Speed Improvement in Insulated Gate Bipolar Transistor (IGBT) By Electron Irradiation." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/54388837044773115923.

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碩士<br>國立清華大學<br>電子工程研究所<br>88<br>Electron Irradiation is a technique used to control the Insulated Gate Bipolar Transistor (IGBT) switching performance. It can reduce the minority carrier lifetime and increase the recombination rate of the excess minority carriers by generating the atomic displacement and trap centers in the drift region of the IGBTs. However, electron irradiation induces undesired effects on other parameters, such as forward voltage drop and threshold voltage. In this thesis, we design a series of electron irradiation dosage to optimize the steady states and swit

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Wang, Wei-Chou, and 王偉州. "Investigation of InGa(Al)As/InP Heterojunction Bipolar Transistors and Negative-Differential-Resistance Switching Devices." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/05594953355958493387.

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博士<br>國立成功大學<br>電機工程學系<br>89<br>In this dissertation, we have successfully fabricated and demonstrated InP-based heterojunction bipolar transistors (HBT's). The characteristics of InGaAs/InP superlattice emitter resonant tunneling bipolar transistors (SE-RTBT's) and InGaAlAs/InP d-doped HBT's are measured and discussed. The characteristics of epitaxial layers and SiO2 film will be analyzed by double-crystal x-ray diffraction (DCXRD), photoluminescence (PL), energy dispersive x-ray spectrometer (EDS), and Auger electron spectroscopy (AES). The scanning electron microscope (SEM) techn

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Yeh, Yu-Ting, and 葉昱廷. "Effect of Ti Top Electrode on Bipolar Resistive Switching Properties of RF Sputtered SrZrO3 Thin Films." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/36793869807842651866.

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碩士<br>國立交通大學<br>電子工程系所<br>97<br>In this thesis, the RRAM devices manufactured based on SrZrO3 (SZO) thin films are studied and developed.　At first, we will introduce the applications, fundamental characteristics, and advantages of next-generation nonvolatile memories. The conduction mechanisms of RRAM that have been published are also discussed.　In experimental details, Pure SZO film was deposited on the LaNiO3 buffer layer by RF magnetron sputter. Pt and Ti act as bottom and top electrode by Dual E-Gun evaporation, respectively. Therefore, electrode/resistive thin film/buffer layer/electrode

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Tseng, Chan-Yu, and 曾占宇. "The effect of ZnO film thickness on bipolar resistive switching behaviors of ZnO-based transparent structure." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/34112147920335133241.

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Chao, Chi-Liang, and 趙啟良. "Study of Bipolar Resistive Switching in Copper-doped Tantalum Oxide Thin Films Prepared by Plasma Oxidation." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/80178226980350476572.

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碩士<br>國立臺灣科技大學<br>材料科學與工程系<br>100<br>A thin copper-doped tantalum oxide (Cu-TaOx) film was prepared by plasma oxidation of a copper-doped tantalum nitride (Cu-TaN), and its resistance switching behavior was studied. A Cu-TaN film was firstly deposited by co-sputtering as a bottom electrode, then the Cu-TaN film was oxidized in an oxygen-containing plasma to form an insulating layer (Cu-TaOx). At last, the TaN film was deposited on top of the insulating layer as the top electrode to form a MIM structure. The insulating layer was fabricated by RF plasma oxidation and microwave plasma oxidation,

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葉川慶. "Bipolar Switching properties in Resistive Random Access Memory Devices with Pd electrode and Ni inserted layer." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/92232709371559873905.

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Huang, Hsin-Ping, and 黃欣萍. "Effect of Interfacial Oxide layer (TiOx) on Bipolar Resistive Switching of Ti/ITO and ITO/Ti Devices." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/47675666800588181866.

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碩士<br>國立臺灣科技大學<br>材料科學與工程系<br>102<br>In this study, we used titanium (Ti) and indium tin oxide (ITO) as the eletrodes to fabricate the TiN/Ti/TiOx/ITO and ITO/TiOx/Ti/TiN resistance random acess memory (RRAM) without depositing a resistor layer. It was found that an interfacial-oxide layer TiOx was spontaneously formed between Ti and ITO layers. The TiN/Ti/TiOx/ITO device showed bipolar switching of resistance in counterclockwise direction without forming a process. The TiN/Ti/TiOx/ITO device changed from high resistive state (HRS) to low resistive state (LRS) at about 1.16 V and changed bac

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Chuang, Yan-Ting, and 莊彥庭. "Self-compliance bipolar switching behavior in a ZnO NRs/CuO p-n heterojuntion with low operating current." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/95370746763416728055.

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碩士<br>國立臺灣大學<br>應用物理所<br>101<br>The growth and bipolar resistive switching behavior of ZnO nanorods / CuO PN heterojunction are reported in this thesis. ZnO nanorods were grown on ITO substrate by using hydrothermal method. A Cu layer was then grown on top of the ZnO nanorods and oxidized to become CuO, but before the growth of the Cu layer, the empty spaces between nanorods were filled with photo-resist to prevent current leakage. Scanning electron microscope, Photoluminescence and X-Ray diffraction were used to study the surface morphology and the crystalline structure of the sample and the

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Li, Chia-Hui, and 黎佳惠. "Effect of Interfacial Aluminum Oxide on Bipolar Resistive Switching of the Al/TaOxNy/TaN and TaN/TaOxNy/Al Devices." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/87359955082210959701.

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碩士<br>國立臺灣科技大學<br>材料科學與工程系<br>101<br>In this study, we demonstrate the effect of interfacial aluminum oxide (AlOz) layer near the Al-TaOxNy interface and compare reversible switching behaviors of the Al/TaOxNy/TaN and TaN/TaOxNy/Al resistance random access memory (RRAM) devices. The TaN and Al films which are compatible with the integrated circuits technology were prepared by sputter deposition as the electrode layers to replace expensive Pt electrode, and the tantalum oxynitride (TaOxNy) film was prepared by reactive sputtering or microwave plasma oxidation of the TaN films as the insulating

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CHANG, CHUN-YEN, and 張駿彥. "The Width of Anode and Junction Depth correlated with the Switching Speed on Insulated Gate Bipolar Transistor and Electrical-Curve Fitting P-FinFET Transistor." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/3fnccm.

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碩士<br>明新科技大學<br>電子工程系碩士班<br>106<br>Abstract Insulated Gate Bipolar Transistor (IGBT) is a popular power discrete device. The gate voltage of the MOSFET controls the high input impedance of the transistor, and it also uses the BJT's double-loaded sub-stream to achieve high current and low on-voltage control performances. By the way, IGBTs can also work with high reverse bias and is thus considered the prime power discrete. However, in order to understand the electrical performances of IGBT, some alternative measuring tool is used to do the job because high power curve tracer is not always avai

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Bogusz, Agnieszka. "Development of novel YMnO3-based memristive structures." 2016. https://monarch.qucosa.de/id/qucosa%3A21352.

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Memristor, defined as a two-terminal device which exhibits a pinched hysteresis loop in the current-voltage characteristics, is a main component of the resistive random access memory. Both memristor and memristive phenomena, known also as resistive switching (RS), have been thoroughly investigated in the past nearly two decades. This dissertation investigates YMnO3 thin films and explores a new concept concerning utilization of multiferroic properties for activation and/or enhancement of RS. It is hypothesized that the charged domain walls and/or vortex cores in YMnO3 thin films can act as an

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Rosa, José Manuel Atalaia. "Solution-based IGZO nanoparticles memristor." Master's thesis, 2016. http://hdl.handle.net/10362/21755.

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This work aims to characterize Indium-Gallium-Zinc-Oxide nanoparticles (IGZOnp) as a resistive switching matrix in metal-insulator-metal (MIM) structures for memristor application. IGZOnp was produced by low cost solution-based process and deposited by spin-coating technique. Several top and bottom electrodes combinations, including IZO, Pt, Au, Ti, Ag were investigated to evaluate memory performance, yield and switching properties. The effect of ambient and annealing temperature using 350 ºC and 200 ºC was also analysed in order to get more insight into resistive switching mechanism. The Ag/

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