Relevant bibliographies by topics / Bipolar switching

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Bipolar switching'

Author: Grafiati
Published: 4 June 2021
Last updated: 5 February 2022

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Journal articles on the topic "Bipolar switching"

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Symonds, R. L. "‘Switching’ in bipolar disorder." Advances in Psychiatric Treatment 12, no. 4 (July 2006): 306–7. http://dx.doi.org/10.1192/apt.12.4.306.

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Akiskal, H. S. "Temperament and bipolar switching." European Neuropsychopharmacology 6 (June 1996): 218. http://dx.doi.org/10.1016/0924-977x(96)88329-5.

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Silard, Andrei P., and Gabriel Nani. "TILBW Bipolar Power Switching Transistor." Japanese Journal of Applied Physics 28, Part 2, No. 3 (March 20, 1989): L356—L357. http://dx.doi.org/10.1143/jjap.28.l356.

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Lange-Asschenfeldt, C., I. Blaeser, and T. Supprian. "Bipolar Switching after Carbamazepine Withdrawal." Pharmacopsychiatry 40, no. 2 (March 2007): 86–87. http://dx.doi.org/10.1055/s-2007-970140.

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Ryu, Hojeong, Beomjun Park, and Sungjun Kim. "Bias Polarity Dependent Threshold Switching and Bipolar Resistive Switching of TiN/TaOx/ITO Device." Metals 11, no. 10 (September 26, 2021): 1531. http://dx.doi.org/10.3390/met11101531.

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In this work, we demonstrate the threshold switching and bipolar resistive switching with non-volatile property of TiN/TaOx/indium tin oxide (ITO) memristor device. The intrinsic switching of TaOx is preferred when a positive bias is applied to the TiN electrode in which the threshold switching with volatile property is observed. On the other hand, indium diffusion could cause resistive switching by formation and rupture of metallic conducting filament when a positive bias and a negative bias are applied to the ITO electrode for set and reset processes. The bipolar resistive switching occurs both with the compliance current and without the compliance current. The conduction mechanism of low-resistance state (LRS) and high-resistance state (HRS) are dominated by Ohmic conduction and Schottky emission, respectively. Finally, threshold switching and bipolar resistive switching are verified by pulse operation.
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Ryu, Hojeong, and Sungjun Kim. "Irregular Resistive Switching Behaviors of Al2O3-Based Resistor with Cu Electrode." Metals 11, no. 4 (April 17, 2021): 653. http://dx.doi.org/10.3390/met11040653.

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In this work, we examined the irregular resistive switching behaviors of a complementary metal–oxide–semiconductor (CMOS)-compatible Cu/Al2O3/Si resistor device. X-ray photoelectron spectroscopy (XPS) analysis confirmed the chemical and material compositions of a Al2O3 thin film layer and Si substrate. Bipolar resistive switching occurred in a more stable manner than the unipolar resistive switching in the device did. Five cells were verified over 50 endurance cycles in terms of bipolar resistive switching, and a good retention was confirmed for 10,000 s in the high-resistance state (HRS) and the low-resistance state (LRS). Both high reset current (~10 mA) and low reset current (<100 μA) coexisted in the bipolar resistive switching. We investigated nonideal resistive switching behaviors such as negative-set and current overshoot, which could lead to resistive switching failure.
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Post, Robert M., Kirk D. Denicoff, Gabriele S. Leverich, and Mark A. Frye. "Drug-Induced Switching in Bipolar Disorder." CNS Drugs 8, no. 5 (November 1997): 352–65. http://dx.doi.org/10.2165/00023210-199708050-00002.

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Xu, Qingyu, Xueyong Yuan, Yanqiang Cao, Lifang Si, and Di Wu. "Bipolar resistive switching in BiFe0.95Mn0.05O3 films." Solid State Communications 152, no. 22 (November 2012): 2036–39. http://dx.doi.org/10.1016/j.ssc.2012.08.023.

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Pradel, Annie, Nathalie Frolet, Michel Ramonda, Andrea Piarristeguy, and Michel Ribes. "Bipolar resistance switching in chalcogenide materials." physica status solidi (a) 208, no. 10 (June 15, 2011): 2303–8. http://dx.doi.org/10.1002/pssa.201000767.

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Akiskal, Hagop S. "Switching From 'Unipolar' to Bipolar II." Archives of General Psychiatry 52, no. 2 (February 1, 1995): 114. http://dx.doi.org/10.1001/archpsyc.1995.03950140032004.

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Dissertations / Theses on the topic "Bipolar switching"

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Chin, Shaoan. "MOS-bipolar composite power switching devices." Diss., Virginia Polytechnic Institute and State University, 1985. http://hdl.handle.net/10919/54275.

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Two MOS-Bipolar composite power semiconductor switching devices are proposed and experimentally demonstrated. These devices feature high voltage and high current capabilities, fast switching speeds, simple gate drive requirements, savings in chip area, reverse bias second breakdown ruggedness and large safe operating areas. Application characteristics of the devices for high frequency power inverter circuits are discussed. Monolithic integration of the two composite devices are also proposed.
Ph. D.
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Rabah, Kefa V. O. "A study of switching of MOS-bipolar power transistor hybrids." Thesis, Lancaster University, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.314432.

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Yang, Xin. "Controlled IGBT switching for power electronics building block." Thesis, University of Cambridge, 2014. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708442.

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Nicholls, Jonathan Christopher. "Soft-switching performance analysis of the clustered insulated gate bipolar transistor (CIGBT)." Thesis, De Montfort University, 2009. http://hdl.handle.net/2086/2396.

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The use of Insulated Gate Bipolar Transistors (IGBT) have enabled better switching performance than the Metal Oxide Semiconductor Field effect Transistor (MOSFET) in medium to high power applications due to their lower on-state power loss and higher current densities. The power ratings of IGBTs are slowly increasing and are envisaged to replace thyristors in medium power applications such as High Voltage Direct Current (HVDC) inverter systems and traction drive controls. Devices such as the MOS Controlled Thyristor (MCT) and Emitter Switched Thyristor (EST) were developed in an effort to further simplify drive requirements of thyristors by incorporating a voltage controlled MOS gate into the thyristor structure. However, the MCT is unable to achieve controlled current saturation which is a desirable characteristic of power switching devices while the EST has only limited control. The IGBT can achieve current saturation, however, due to the transistor based structure it exhibits a larger on-state voltage in high power applications compared with thyristor based devices. MOS Gated Thyristor (MGT) devices are a promising alternative to transistor based devices as they exhibit a lower forward voltage drop and improved current densities. This current research focuses on the Clustered Insulated Gate Bipolar Transistor (CIGBT) whilst being operated under soft-switching regimes. The CIGBT is a MOS gated thyristor device that exhibits a unique self-clamping feature that protects cathode cells from high anode voltages under all operating conditions. The self-clamping feature also enables current saturation at high gate biases and provides low switching losses. Its low on-state voltage and high voltage blocking capabilities make the CIGBT suitable as a contender to the IGBT in medium to high power switching applications. For the first time, the CIGBT has been operated under soft-switching regimes and transient over-voltages at turn-on have been witnessed which have been found to be associated with a number of factors. The internal dynamics of the CIGBT have been analysed using 2D numerical simulations and it has been shown that a major influence on the peak voltage is the P well spacing within the CIGBT structure. For example, Small adjacent P well spacings within the device results in an inability for the CIGBT to switch iv on correctly. Further to this, implant concentrations of the n well region during device fabrication can also affect the turn-on transients. Despite this, the CIGBT has been experimental analysed under soft-switching conditions and found to outperform the IGBT by 12% and 27% for on-state voltage drop and total energy losses respectively. Turn off current bumps have been seen whilst switching the device in zero voltage and zero current switching mode of operation and the internal dynamics have been analysed to show the influence upon the current at turn off. Preliminary results on the Trench CIGBT (TCIGBT) under soft switching conditions has also been analysed for the first time and was found to have a reduced peak over-voltage and better switching performance than the planer CIGBT. Through optimisation of the CIGBT structure and fabrication process, it is seen that the device will become a suitable replacement to IGBT in medium power application.
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Hossin, Mohamad Abdalla. "Evaluation of gallium arsenide Schottky Gate Bipolar Transistor for high-voltage power switching applications." Thesis, University of Newcastle Upon Tyne, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.263129.

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Gambetta, Daniele Morco. "Sensorless technique for BLDC motors." University of Southern Queensland, Faculty of Engineering and Surveying, 2006. http://eprints.usq.edu.au/archive/00001427/.

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Commutation is a fundamental feature of all DC machines. In conventional DC machines the commutation function is performed by the commutator and brushes. These act as both position sensors and switches. The mechanical commutator has obvious disadvantages. Overcoming those disadvantages has been a major reason behind the development of brushless DC (BLDC) machines. In brushless DC machines commutation is performed by power electronic devices forming part of an inverter bridge. However, switching of the power electronic devices has to be synchronised with rotor position. Position sensing is therefore an essential requirement. This can be done by using sensors such as Hall Effect devices or a sensorless approach may be adopted. Advantages of sensorless techniques include reduced cost and wiring. The most common sensorless method is based on detection of the zero crossing of back EMF signals. But this technique works only above a certain speed since back EMF is directly proportional to speed. As a result BLDC systems which rely solely on back EMF signals for commutation suffer from relatively poor starting performance characterised by back rotation of up to one hundred and eigthty electrical degrees and large fluctuations in electromagnetic torque resulting from non-ideal commutation instants. This may not be acceptable for some applications and many researchers have attempted to overcome those problems. The aim of this project has been to investigate the possibility of a sensorless technique which does not cost more than the back EMF method but with a performance at start-up comparable with that obtained when Hall sensors are used. Initial investigations led to a saliency based method. Detailed theoretical analysis is presented which shows that the method is insensitive to variations in operational parameters such as load current and circuit parameters such as power device voltage drops and winding resistances. There is a close parallel between it and the back EMF method and this makes it easy to swap to the latter method at high speed if necessary. A starting strategy, relying on saliency related measurements, is proposed which offers starting performance much better than the back EMF method and almost as good as Hall sensor based techniques. Experimental evidence is provided to confirm that commutation instants determined by the proposed method are practically coincident with those obtained when Hall sensors are used.
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Hatem, Firas Odai. "Bipolar resistive switching of bi-layered Pt/Ta2O5/TaOx/Pt RRAM : physics-based modelling, circuit design and testing." Thesis, University of Nottingham, 2017. http://eprints.nottingham.ac.uk/39786/.

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Over the last few years, the non-volatile memories (NVM) have been dominating the research of the storage elements. The resistance random-access memory (RRAM) and the memristor that employs the resistive switching (RS) mechanism appear to be potential candidates for NVM. Among the RS materials that were reported is the TaOx which showed surprising RS performance. This oxide material has been widely used to construct a metal-insulator-semiconductor-metal (MISM) RRAM which can be referred to as bi-layered RRAM. This bi-layered RRAM consists of TaOx as a bulk material and Ta2O5 as an insulator layer, sandwiched between two platinum electrodes to form Pt/Ta2O5/TaOx/Pt RRAM. However, a physics-based mathematical model of this RRAM is required to further study the detailed physics behind its conduction mechanism and the RS process. In addition to the mathematical model, a SPICE model is also required to understand the behaviour of this bi-layered RRAM device when integrated in memory design for the future generation storage devices or when used in RRAM-based circuit applications. This doctoral research presents novel mathematical and SPICE models of a bipolar resistive switching (BRS) of the Pt/Ta2O5/TaOx/Pt bi-layered RRAM. For this purpose, MATLAB and LTSPICE are used to design the mathematical and the SPICE bi-layered RRAM models, respectively, and the obtained simulation results for both models are compared with the experimental data from SAMSUNG labs. The novelty of the mathematical model lies in incorporating the tunnelling probability factor (TPF) between the semiconductor and the metal layers and therefore, demonstrating its effect on the conduction mechanism. In addition, the effect of continuous variation of the interface traps densities and the ideality factor during BRS is modelled using the semiconductor properties and the characteristics of the metal-insulator-semiconductor (MIS) system. Thus, the model emphasizes the dependency of the device current on the physical characteristics of the insulator layer. Moreover, the electric field equation for the active region is derived for the MISM structure which is used together with Mott and Gurney rigid point-ion model and Joule heating effect to model the oxygen ion migration mechanism. Finally, the model also demonstrates the self-limiting growth of the doped region. The proposed SPICE model emphasizes the impact of the change in the switching layer thickness on the device behaviour at low resistance state (LRS), high resistance state (HRS), and the transitional period. The validity of the SPICE model is verified through using three different sets of experimental data from Pt/Ta2O5/TaOx/Pt RRAM with switching layer thickness smaller than 5 nm. The SPICE model reproduced all the major features from the experimental results for the SET and RESET processes and also the asymmetric and the symmetric characteristics in HRS and LRS, respectively. The SPICE model matches the measured experimental results with an average error of < 11%. It also showed stable behaviour for its HRS and LRS regions under different types of input signals. The model is parameterized in order to fit into Ta2O5/TaOx RRAM devices with switching layer thickness smaller than 5 nm, thus, facilitating the model usage. The SPICE model can be included in the SPICE-compatible circuit simulation and is suitable for the exploration of the Ta2O5/TaOx bi-layered RRAM device performance at circuit level. At the end of the research, a metal-insulator-metal (MIM) RRAM SPICE model of Ta/TaOx/Pt is developed which can be used in the future work to compare between the MISM and MIM TaOx-based RRAM devices.
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Eio, Samson. "Current Injection Techniques to Optimise the Switching Transients of Power Diodes. Thyristors and Insulated Gate Bipolar Transistors (IGBTs)." Thesis, Staffordshire University, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.522131.

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You, Tiangui. "Resistive switching in BiFeO3-based thin films and reconfigurable logic applications." Doctoral thesis, Universitätsbibliothek Chemnitz, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-212501.

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The downscaling of transistors is assumed to come to an end within the next years, and the semiconductor nonvolatile memories are facing the same physical downscaling challenge. Therefore, it is necessary to consider new computing paradigms and new memory concepts. Resistive switching devices (also referred to as memristive switches) are two-terminal passive device, which offer a nonvolatile switching behavior by applying short bias pulses. They have been considered as one of the most promising candidates for next generation memory and nonvolatile logic applications. They provide the possibility to carry out the information processing and storage simultaneously using the same resistive switching device. This dissertation focuses on the fabrication and characterization of BiFeO3 (BFO)-based metal-insulator-metal (MIM) devices in order to exploit the potential applications in nonvolatile memory and nonvolatile reconfigurable logics. Electroforming-free bipolar resistive switching was observed in MIM structures with BFO single layer thin film. The resistive switching mechanism is understood by a model of a tunable bottom Schottky barrier. The oxygen vacancies act as the mobile donors which can be redistributed under the writing bias to change the bottom Schottky barrier height and consequently change the resistance of the MIM structures. The Ti atoms diffusing from the bottom electrode act as the fixed donors which can effectively trap and release oxygen vacancies and consequently stabilize the resistive switching characteristics. The resistive switching behavior can be engineered by Ti implantation of the bottom electrodes. MIM structures with BiFeO3/Ti:BiFeO3 (BFO/BFTO) bilayer thin films show nonvolatile resistive switching behavior in both positive and negative bias range without electroforming process. The resistance state of BFO/BFTO bilayer structures depends not only on the writing bias, but also on the polarity of reading bias. For reconfigurable logic applications, the polarity of the reading bias can be used as an additional logic variable, which makes it feasible to program and store all 16 Boolean logic functions simultaneously into the same single cell of BFO/BFTO bilayer MIM structure in three logic cycles
Die Herunterskalierung von Transistoren für die Informationsverarbeitung in der Halbleiterindustrie wird in den nächsten Jahren zu einem Ende kommen. Auch die Herunterskalierung von nichtflüchtigen Speichern für die Informationsspeicherung sieht ähnlichen Herausforderungen entgegen. Es ist daher notwendig, neue IT-Paradigmen und neue Speicherkonzepte zu entwickeln. Das Widerstandsschaltbauelement ist ein elektrisches passives Bauelement, in dem ein der Widerstand mittels elektrischer Spannungspulse geändert wird. Solche Widerstandsschaltbauelemente zählen zu den aussichtsreichsten Kandidaten für die nächste Generation von nichtflüchtigen Speichern sowie für eine rekonfigurierbare Logik. Sie bieten die Möglichkeit zur gleichzeitigen Informationsverarbeitung und -speicherung. Der Fokus der vorliegenden Arbeit liegt bei der Herstellung und der Charakterisierung von BiFeO 3 (BFO)-basierenden Metal-insulator-Metall (MIM) Strukturen, um zukünftig deren Anwendung in nichtflüchtigen Speichern und in rekonfigurierbaren Logikschaltungen zu ermöglichen. Das Widerstandsschalten wurde in MIM-Strukturen mit einer BFO-Einzelschicht untersucht. Ein besonderes Merkmal von BFO-basierten MIM-Strukturen ist es, dass keine elektrische Formierung notwendig ist. Der Widerstandsschaltmechnismus wird durch das Modell einer variierten Schottky-Barriere erklärt. Dabei dienen Sauerstoff-Vakanzen im BFO als beweglichen Donatoren, die unter der Wirkung eines elektrischen Schreibspannungspulses nichtflüchtig umverteilt werden und die Schottky-Barriere des Bottom-Metallkontaktes ändern. Dabei spielen die während der Herstellung von BFO substitutionell eingebaute Ti-Donatoren in der Nähe des Bottom-Metallkontaktes eine wesentliche Rolle. Die Ti-Donatoren fangen Sauerstoff-Vakanzen beim Anlegen eines positiven elektrischen Schreibspannungspulses ein oder lassen diese beim Anlegen eines negativen elektrischen Schreibspannungspules wieder frei. Es wurde gezeigt, dass die Ti-Donatoren auch durch Ti-Implantation der Bottom-Elektrode in das System eingebracht werden können. MIM-Strukturen mit BiFeO 3 /Ti:BiFeO 3 (BFO/BFTO) Zweischichten weisen substitutionell eingebaute Ti-Donatoren sowohl nahe der Bottom-Elektrode als auch nahe der Top-Elektrode auf. Sie zeigen nichtflüchtiges, komplementäres Widerstandsschalten mit einer komplementär variierbaren Schottky-Barriere an der Bottom-Elektrode und an der Top-Elektrode ohne elektrische Formierung. Der Widerstand der BFO/BFTO-MIM-Strukturen hängt nicht nur von der Schreibspannung, sondern auch von der Polarität der Lesespannung ab. Für die rekonfigurierbaren logischen Anwendungen kann die Polarität der Lesespannung als zusätzliche Logikvariable verwendet werden. Damit gelingt die Programmierung und Speicherung aller 16 Booleschen Logik-Funktionen mit drei logischen Zyklen in dieselbe BFTO/BFO MIM-Struktur
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Perez, Stéphanie. "Etude des effets de dose et débit de dose sur des amplificateurs à technologies bipolaires. Mise en application sur le satellite Robusta." Thesis, Montpellier 2, 2011. http://www.theses.fr/2011MON20075/document.

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L'agressivité de l'environnement radiatif spatial constitue une cause majeure de défaillance des composants et systèmes embarqués sur les satellites. Les transistors bipolaires sont sensibles au rayonnement ionisant et peuvent présenter un effet de débit de dose (ELDRS). Une plus forte dégradation est alors observée à faible débit de dose. Les normes actuelles de test ne permettent pas de prendre en compte entièrement cette sensibilité au débit. La nouvelle méthode de test dite des Débits commutés prend en compte cet effet d'ELDRS. Une charge utile développée sur le satellite Robusta et présentée ici va permettre une première validation de la méthode. Des amplificateurs classiques (VFA) dont la sensibilité en dose bien connue et induit des effets circuit, c'est-à-dire une dégradation non monotone des paramètres liés à des phénomènes antagonistes, seront embarqués sur le satellite robusta et serviront à la validation de la méthode. La charge utile du satellite est composée de LM124 et LM139. Le choix du faible débit et des différentes commutations appliquées s'est appuyé sur l'analyse radiation de la mission. Cette méthode a permis de tester les composants à faible débit de dose dans un temps moitié moindre qu'un test faible débit. Les résultats produits pourront par la suite, après mise en orbite de Robusta, être comparés à des données faible débit obtenues en vol.Une seconde étude sur des amplificateurs à convoyeur de courant (CFA), jusque là très peu étudiés, a démontré la sensibilité à la dose de ce type d'amplificateur et mis en évidence de nouveaux effets circuits. Cette étude a été réalisée au moyen de trois types d'irradiations différentes et s'appuie sur une analyse circuit. Les irradiations et l'étude circuit menées ont montré que l'amplitude des dégradations des différents paramètres étudiés est aléatoire et dépend de la symétrie plus ou moins parfaite du circuit : une différence de process entre deux transistors va induire une dégradation plus ou moins importante des paramètres. Ces premiers travaux serviront de base à différentes études, et notamment à l'étude des effets de synergie dose/SET ou de synergie dose/CEM sur les CFA
The aggressive space radiation environment constitutes a major cause of failure for components and systems on board the satellites. Bipolar transistors are know to be sensitive to ionizing radiation and may present dose rate effect (ELDRS). A greater degradation is observed at low dose rate. Current standards test methods can not fully take into account this sensitivity to the dose rate. The new Dose rate Switching test methodology takes into account this ELDRS effect. A Payload developed on the Robusta satellite and presented here will allow a first validation of the method. Classical amplifier (VFA) whose dose rate sensibility is well known and induce circuit effects, that means a non monotonous degradation of parameters related to antagonist phenomena, will be loaded on board Robusta satellite and used to validated the method. The satellite Payload is composed of LM124 and LM139. The low dose rate choice and the different switching applied relied on mission radiation analysis. This method allowed to reproduce the dose induced degradation of the components in half the time it takes at low dose rate. The results produced can then, after Robusta is launched, be compared to low dose rate data obtained in flight. A second study on current conveyor amplifier (CFA), so far very little studied, demonstrated the sensitivity to ionizing dose of this type of amplifier and identified new effects circuits. This study was conducted using three different types of irradiation and based on a circuit analysis. Irradiations and circuit analysis have shown that the amplitude of the degradation measured on the different parameters studied is erratic and depends on the perfect symmetry of the circuit: a slight discrepancy in the process between two transistors will induce a more or less significant symmetry in the parameters degradation. This early work will be a base for various studies, including the study of synergy dose/SET or synergy dose/EMC on CFA
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Books on the topic "Bipolar switching"

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Katzer, Uwe. Schaltungsentwicklung, Simulation und Entwurf von Ansteuer- und Überwachungs-IC's für eine IGBT-Halbbrücke. Dusseldorf: VDI Verlag, 1999.

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Frangos, Philippos Phivos. The simulation and measurement of temperature transients in switching bipolar power transistors. Birmingham: University of Birmingham, 1986.

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Gerster, Christian. Reihenschaltung von Leistungshalbleitern mit steuerseitig geregelter Spannungsverteilung. Konstanz: Hartung-Gorre, 1995.

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Book chapters on the topic "Bipolar switching"

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Okada, Y., and K. Tada. "GaAs/AlGaAs Reflection-Type Optical Switch Using Heterojunction Bipolar Transistor Waveguide Structure." In Photonic Switching II, 50–53. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-76023-5_8.

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Bruchhaus, Rainer, and Rainer Waser. "Bipolar Resistive Switching in Oxides for Memory Applications." In Thin Film Metal-Oxides, 131–67. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-0664-9_4.

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Gandhi, Gaurav, and Varun Aggarwal. "Canonic Memristor: Bipolar Electrical Switching in Metal-Metal Contacts." In Advances in Memristors, Memristive Devices and Systems, 263–73. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-51724-7_11.

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Woggon, B. "Treatment of Bipolar Disorder, Depressed Phase Augmentation/Switching Strategies." In Mood Disorders, 78–87. Basel: KARGER, 1997. http://dx.doi.org/10.1159/000061662.

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Folsche, Thorsten, Hannah Benedictine Maier, Thomas Hillemacher, and Helge Frieling. "Combination Therapies and Switching of Agents in Depression and Bipolar Disorders." In NeuroPsychopharmacotherapy, 1–17. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-319-56015-1_437-1.

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Bertilsson, Kent, and Chris I. Harris. "Comparison of Bipolar and Unipolar SiC Switching Devices for Very High Power Applications." In Materials Science Forum, 975–78. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.975.

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"Bipolar Power Switching Devices." In Fundamentals of Silicon Carbide Technology, 353–415. Singapore: John Wiley & Sons Singapore Pte. Ltd, 2014. http://dx.doi.org/10.1002/9781118313534.ch9.

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Mir, Shameem. "Antidepressant-induced switching in bipolar affective disorder." In Case Studies in Psychopharmacology, 199–209. CRC Press, 2002. http://dx.doi.org/10.1201/b14331-23.

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McCarty, Richard. "Stress and Bipolar Disorder." In Stress and Mental Disorders: Insights from Animal Models, 297–328. Oxford University Press, 2020. http://dx.doi.org/10.1093/med-psych/9780190697266.003.0010.

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Animal models of bipolar disorder (BD) should capture the switching of mood states from mania to depression and vice versa. Dopamine signaling pathways in brain, including variations in the dopamine transporter protein, have been a focus of many animal models of BD. Another aspect of BD in humans is reflected in circadian and seasonal changes in onset of symptoms. Other animal models of BD include the Myshkin and Madison mouse strains, both of which display mania-like behavior that is reversed by treatment with lithium or valproic acid. Another experimental approach has been to manipulate circadian clock genes and examine effects on dopamine signaling and behavior. Finally, manipulations of risk genes for BD in laboratory mice have advanced our understanding of the molecular mechanisms involved in extreme alterations in mood state.
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Thompson, Marc T. "Bipolar Transistor Switching and the Charge Control Model." In Intuitive Analog Circuit Design, 269–304. Elsevier, 2006. http://dx.doi.org/10.1016/b978-075067786-8/50010-0.

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Conference papers on the topic "Bipolar switching"

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SILARD, Andrei, and Gabriel NANI. "TILBW Bipolar Power Switching Transistor." In 1988 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1988. http://dx.doi.org/10.7567/ssdm.1988.a-2-2.

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Fengxiao, Zhai, Hao Yunqi, Liu Nannan, Gao Xiaokai, Liu Sujuan, and Yang Kun. "Bipolar resistive switching of Ge2Sb2Te5 material." In Eleventh International Conference on Information Optics and Photonics (CIOP 2019), edited by Hannan Wang. SPIE, 2019. http://dx.doi.org/10.1117/12.2548815.

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Yueh-Ru Yang. "A DSP-based bipolar switching power supply." In 2011 IEEE Ninth International Conference on Power Electronics and Drive Systems (PEDS 2011). IEEE, 2011. http://dx.doi.org/10.1109/peds.2011.6147384.

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Kuibo Yin, Mi Li, Yiwei Liu, Congli He, Bin Chen, Jinzhi Wang, Fei Zhuge, Run-Wei Li, Ping Cui, and Xiaoqing Pan. "Bipolar resistance switching in multiferroic BiFeO3 polycrystalline films." In 2010 IEEE 3rd International Nanoelectronics Conference (INEC). IEEE, 2010. http://dx.doi.org/10.1109/inec.2010.5424655.

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Alekseeva, Liudmila, Anatolii Petrov, and Dmitrii Chigirev. "Bipolar resistive switching in PbO nanoscale thin films." In 2016 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW). IEEE, 2016. http://dx.doi.org/10.1109/eiconrusnw.2016.7448106.

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Hsu, C. W., C. L. Lo, I. T. Wang, and T. H. Hou. "High-density 1S1R Flexible Bipolar Resistive-Switching Memory." In 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.b-8-1.

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Breglio, Giovanni, Antonello Cutolo, Paolo Spirito, and Luigi Zeni. "Optical switching of bipolar-mode field effect transistors." In Photonics for Industrial Applications, edited by William R. Donaldson. SPIE, 1995. http://dx.doi.org/10.1117/12.198651.

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Liu, Jian, Lijie Zhang, Zitao Shi, Xin Wang, Lin Lin, Li Wang, Chen Zhang, et al. "Characterizing phase switching structures for ESD protection." In 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM. IEEE, 2011. http://dx.doi.org/10.1109/bctm.2011.6082790.

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Bag, A., M. K. Hota, S. Mallik, and C. K. Maiti. "Bipolar resistive switching in different plant and animal proteins." In 2014 IEEE 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). IEEE, 2014. http://dx.doi.org/10.1109/ipfa.2014.6898184.

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Liu, N., P. Yan, H. J. Sun, and X. S. Miao. "Bipolar resistive switching behaviors of AgBiTe chalcogenide thin films." In Information Storage System and Technology. Washington, D.C.: OSA, 2017. http://dx.doi.org/10.1364/isst.2017.isu2a.5.

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Reports on the topic "Bipolar switching"

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Cooper, James A., and Jr. Exploratory Development of SiC Bipolar Transistors and GaN Heterojunction Bipolar Transistors for High-Power Switching Applications. Fort Belvoir, VA: Defense Technical Information Center, March 2003. http://dx.doi.org/10.21236/ada413135.

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Ovrebo, Gregory K. Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module. Fort Belvoir, VA: Defense Technical Information Center, February 2015. http://dx.doi.org/10.21236/ada616757.

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