Journal articles: 'Bio/CMOS interface'

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Terutsuki, Daigo, Hidefumi Mitsuno, Takeshi Sakurai, Yuki Okamoto, Agnès Tixier-Mita, Hiroshi Toshiyoshi, Yoshio Mita, and Ryohei Kanzaki. "Increasing cell–device adherence using cultured insect cells for receptor-based biosensors." Royal Society Open Science 5, no. 3 (March 2018): 172366. http://dx.doi.org/10.1098/rsos.172366.

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Field-effect transistor (FET)-based biosensors have a wide range of applications, and a bio-FET odorant sensor, based on insect (Sf21) cells expressing insect odorant receptors (ORs) with sensitivity and selectivity, has emerged. To fully realize the practical application of bio-FET odorant sensors, knowledge of the cell–device interface for efficient signal transfer, and a reliable and low-cost measurement system using the commercial complementary metal-oxide semiconductor (CMOS) foundry process, will be indispensable. However, the interfaces between Sf21 cells and sensor devices are largely unknown, and electrode materials used in the commercial CMOS foundry process are generally limited to aluminium, which is reportedly toxic to cells. In this study, we investigated Sf21 cell–device interfaces by developing cross-sectional specimens. Calcium imaging of Sf21 cells expressing insect ORs was used to verify the functions of Sf21 cells as odorant sensor elements on the electrode materials. We found that the cell–device interface was approximately 10 nm wide on average, suggesting that the adhesion mechanism of Sf21 cells may differ from that of other cells. These results will help to construct accurate signal detection from expressed insect ORs using FETs.

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Gonzalez, Joe L., Paul K. Jo, Reza Abbaspour, and Muhannad S. Bakir. "A Disposable and Self-Aligned 3-D Integrated Bio-Sensing Interface Module for CMOS Cell-Based Biosensor Applications." IEEE Electron Device Letters 39, no. 8 (August 2018): 1215–18. http://dx.doi.org/10.1109/led.2018.2851969.

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Mendiratta, Namrata, Suman Lata Tripathi, Sanjeevikumar Padmanaban, and Eklas Hossain. "Design and Analysis of Heavily Doped n+ Pocket Asymmetrical Junction-Less Double Gate MOSFET for Biomedical Applications." Applied Sciences 10, no. 7 (April 5, 2020): 2499. http://dx.doi.org/10.3390/app10072499.

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The Complementary Metal-Oxide Semiconductor (CMOS) technology has evolved to a great extent and is being used for different applications like environmental, biomedical, radiofrequency and switching, etc. Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) based biosensors are used for detecting various enzymes, molecules, pathogens and antigens efficiently with a less time-consuming process involved in comparison to other options. Early-stage detection of disease is easily possible using Field-Effect Transistor (FET) based biosensors. In this paper, a steep subthreshold heavily doped n+ pocket asymmetrical junctionless MOSFET is designed for biomedical applications by introducing a nanogap cavity region at the gate-oxide interface. The nanogap cavity region is introduced in such a manner that it is sensitive to variation in biomolecules present in the cavity region. The analysis is based on dielectric modulation or changes due to variation in the bio-molecules present in the environment or the human body. The analysis of proposed asymmetrical junctionless MOSFET with nanogap cavity region is carried out with different dielectric materials and variations in cavity length and height inside the gate–oxide interface. Further, this device also showed significant variation for changes in different introduced charged particles or region materials, as simulated through a 2D visual Technology Computer-Aided Design (TCAD) device simulator.

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Alraho, Senan, Qummar Zaman, Hamam Abd, and Andreas König. "Integrated Sensor Electronic Front-Ends with Self-X Capabilities." Chips 1, no. 2 (August 12, 2022): 83–120. http://dx.doi.org/10.3390/chips1020008.

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The ongoing vivid advance in integration technologies is giving leverage both to computing systems as well as to sensors and sensor systems. Both conventional computing systems as well as innovative computing systems, e.g., following bio-inspiration from nervous systems or neural networks, require efficient interfacing to an increasing diversity of sensors under the constraints of metrology. The realization of sufficiently accurate, robust, and flexible analog front-ends (AFE) is decisive for the overall application system and quality and requires substantial design expertise both for cells in System-on-Chip (SoC) or chips in System-in-Package (SiP) realizations. Adding robustness and flexibility to sensory systems, e.g., for Industry 4.0., by self-X or self-* features, e.g., self-monitoring, -trimming, or -healing (AFEX) approaches the capabilities met in living beings and is pursued in our research. This paper summarizes on two chips, denoted as Universal-Sensor-Interface-with-self-X-properties (USIX) based on amplitude representation and reports on recently identified challenges and corresponding advanced solutions, e.g., on circuit assessment as well as observer robustness for classic amplitude-based AFE, and transition activities to spike domain representation spiking-analog-front-ends with self-X properties (SAFEX) based on adaptive spiking electronics as the next evolutionary step in AFE development. Key cells for AFEX and SAFEX have been designed in XFAB xh035 CMOS technology and have been subject to extrinsic optimization and/or adaptation. The submitted chip features 62,921 transistors, a total area of 10.89 mm2 (74% analog, 26% digital), and 66 bytes of the configuration memory. The prepared demonstrator will allow intrinsic optimization and/or adaptation for the developed technology agnostic concepts and chip instances. In future work, confirmed cells will be moved to complete versatile and robust AFEs, which can serve both for conventional as well as innovative computing systems, e.g., spiking neurocomputers, as well as to leading-edge technologies to serve in SOCs.

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Carrara, Sandro. "Integrated Bio/Nano/CMOS interfaces for electrochemical molecular sensing." IEEJ Transactions on Electrical and Electronic Engineering 13, no. 11 (September 21, 2018): 1534–39. http://dx.doi.org/10.1002/tee.22793.

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Datta-Chaudhuri, Timir, Elisabeth Smela, and Pamela A. Abshire. "System-on-Chip Considerations for Heterogeneous Integration of CMOS and Fluidic Bio-Interfaces." IEEE Transactions on Biomedical Circuits and Systems 10, no. 6 (December 2016): 1129–42. http://dx.doi.org/10.1109/tbcas.2016.2522402.

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Zhao, Qing-Tai, Fengben Xi, Yi Han, Andreas Grenmyr, Jin Hee Bae, and Detlev Gruetzmacher. "Ferroelectric Devices for Neuromorphic Computing." ECS Meeting Abstracts MA2022-02, no. 32 (October 9, 2022): 1183. http://dx.doi.org/10.1149/ma2022-02321183mtgabs.

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Neuromorphic computing inspired by the neural network systems of the human brain enables energy efficient computing for big-data processing. A neural network is formed by thousands or even millions of neurons which are connected by even a higher number of synapses. Neurons communicate with each other through the connected synapses. The main responsibility of synapses is to transfer information from the pre-synaptic to the postsynaptic neurons. Synapses can memorize and process the information simultaneously. The plasticity of a synapse to strengthen or weaken their activity over time make it capable of learning and computing. Thus, artificial synapses which can emulate functionalities and the plasticity of bio-synapses form the backbones of neuromorphic computing. Alternative artificial synapses have been successfully demonstrated. The classical two-terminal memristor devices, like resistive random access memory (ReRAM), phase change memory (PCM) and ferroelectric tunnel junctions (FTJs) with one terminal connected to the pre-synaptic neuron and another connected with the post-synaptic neuron, own advantages of simple structure, easy processing with high density, and capability of integration with CMOS. However, signal processing and learning cannot be performed simultaneously in 2-terminal devices, thus limiting their synaptic functionalities. Ferroelectric field effect transistors (FeFET) which uses ferroelectric as the gate oxide are the most interesting three-terminal artificial synapse devices, in which the gate or the source is connected to the pre-synaptic neuron while the drain is used for the terminal of the post-synaptic neuron , thus can perform signal transmission and learning simultaneously. However, traps at the channel interface can degrade the device performance causing low endurance. Focuses of those abovementioned devices have been mainly put on the homosynaptic plasticity, which is input specific, meaning that the plasticity occurs only at the synapse with a pre-synaptic activation . The homosynaptic plasticity has a drawback of positive feedback loop: when a synapse is potentiated, the probability of the synapse to be further potentiated is increased. Similarly, when a synapse is depressed the probability of the synapse of being further depressed is higher. Therefore, synaptic weights tend to be either strengthened to the maximum value or weakened to zero, causing the system to be unstable. In contrast, heterosynaptic plasticity can be induced at any synapse at the same time after episodes of strong postsynaptic activity, avoiding the positive feedback problem and stabilize the activity of the post-synaptic neuron. To address the above challenges we proposed a very simple 4-terminal synapse structure based on gated Schottky diodes on silicon (FEMOD) with a ferroelectric layer. The conductance of the Schottky diode is modulated by the polarization of the ferroelectric layer. With this simple synapse structure we can achieve multiple hetero-synaptic functions, including excitatory/ inhibitory post-synaptic current (EPSC/IPSC), paired-pulse facilitation/depression (PPF/PPD), long-term potentiation/depression (LTP/LTD), as well as biological neuron-like spike-timing-dependent plasticity (STDP) characteristics. The modulatory synapse can modify the weight of another synapse with a very low voltage. Furthermore, logic gates, like AND and NAND which are highly desired for in-memory computing can be realized with such simple structure. Figure 1

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Fang, Zheng, Yang Yang, Fu Min Deng, and Jing Cai. "Research Advances in Mobile Advertising Areas." Applied Mechanics and Materials 248 (December 2012): 555–58. http://dx.doi.org/10.4028/www.scientific.net/amm.248.555.

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As the rapid development mobile phone and mobile internet, the mobile phone is considered as the import interface between brands and consumers by managers. Mobile advertising, whichis defined as “any form of marketing, advertising or sales promotion activity aimed at consumers and conducted over a mobile channel is becoming the new promising marketing channel. Given this importance, how to conduct mobile advertising campaign to increase advertising effect is an big challenge for CMOs. To help the CMO to understand the mobile advertising, this paper reviewed recent research advances in mobile advertising researches.

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Merckling, Clement, Islam Ahmed, Tsang Hsuan Tsang, Moloud Kaviani, Jan Genoe, and Stefan De Gendt. "(Invited) Integrated Perovskites Oxides on Silicon: From Optical to Quantum Applications." ECS Meeting Abstracts MA2022-01, no. 19 (July 7, 2022): 1060. http://dx.doi.org/10.1149/ma2022-01191060mtgabs.

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With the slowing down of Moore’s law, related to conventional scaling of integrated circuits, alternative technologies will require research effort for pushing the limits of new generations of electronic or photonic devices. Perovskite oxides with the ABO3 chemical formula have a very wide range of interesting intrinsic properties such as metal-insulator transition, ferroelectricity, pyroelectricity, piezoelectricity, ferromagnetic and superconductivity. For the integration of such oxides, it is of great interest to combine their properties with traditional electronic, memory and optical devices on the same silicon-based platform. In the context of high-speed chip-to-chip optical interconnects, compact high-resolution beam steering and video-rate RGB hologram generation require the integration of fast and efficient optical modulators on top of silicon CMOS devices. For these applications the integration of high quality electro-optical materials A defect-free material-stack deposition on silicon wafers is hence required. Among the possible materials options, barium titanate (BaTiO3) is one promising candidate due to its large intrinsic Pockels coefficients that can be obtained. In a first part of the talk, we will review the different options to integrate BaTiO3 on Silicon substrate though different templates to control the polarization direction and discuss the influence on the physical, electrical and optical properties. Then in the second section we will discuss the use of perovskites oxide in the field of topological based qubits which is one of the promising methods for realizing fault-tolerant computations. It is recognized that superconductor/topological insulator heterostructure interfaces may be a perfect host for the exotic “Majorana” particles. These have relevant topological protection nature as required for processing information. Therefore, the physics at the superconductor/topological insulator heterostructure interface need to be studied further, starting at the material level. In this work, a candidate material Barium Bismuthate (BBO) is studied utilizing the Oxide Molecular Beam Epitaxy (MBE) process. The perovskite structure provides opportunity for easily tailored functionality through substitutional doping. Incorporation of potassium into the lattice of BBO results in a superconducting phase with Curie temperature as high as ~ 30K. In addition, BBO is according to DFT based studies, predicted to form topological surface states when doped with Fluorine. In our work, we integrate BBO perovskite on Si(001) substrate, using an epitaxially grown strontium titanate (STO) single-crystalline buffer layer and discuss the structural and chemical properties of the heterostructure will be established by utilizing physical characterization techniques such as AFM, and TEM in later stages. This will go hand in hand with the understanding of the ARPES studies and related surface reconstruction of BBO observed by RHEED as a criterion for the high-quality films. This project has received funding from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation program (grant agreements No 864483 and 742299)”.

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Wegman, Jacob S., Amar Dwarka, Matthew Holzer, Whye-Kei Lye, Michael L. Reed, Erik Herzog, and Travis N. Blalock. "Transimpedance Mode CMOS Microelectrode Array For In-Vitro Neuronal Activity Recording." MRS Proceedings 773 (2003). http://dx.doi.org/10.1557/proc-773-n6.2.

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AbstractA CMOS integrated microelectrode array (IMA) utilizing a low-inpedance transimpedance input has been developed. The design uses a three-stage amplifier, including a transimpedance input stage, buffer, and multiplexor. The input stage presents a low impedance which provides bias for the neural input and maximizes the current transfer into the circuit. The amplifiers are replicated in an 8x8 array, enabling measurement of a network of 64 neurons invitro. The chip was post-processed to provide a bio-compatible gold interface between the electrodes and the neurons. Simulations and experimental results demonstrate the functionality of the new design. Additional measurements are underway to provide experimental confirmation of the system with in-vitro neurons.

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Jiang, Weihong, D. Landheer, G. Lopinski, A. Rankin, N. G. Tarr, and M. J. Deen. "Post-processing of Commercial CMOS Chips for the Fabrication of DNA Bio-FET Sensor Arrays." MRS Proceedings 951 (2006). http://dx.doi.org/10.1557/proc-0951-e05-09.

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ABSTRACTA BioFET array can be fabricated by post-processing of a standard CMOS chip if temperatures are kept below 450 ° and radiation or ion-bombardment damage is minimized. The processing starts with encapsulation by deposition of a low stress, electrolyte-impermeable silicon nitride layer by PECVD at 375 °C. Anisotropic reactive ion etching with an inductively coupled plasma using C4F8 and Ar was used to remove the silicon nitride and oxide layers above the poly-silicon gates. The poly-silicon was then etched off using a selective wet etch. The effect of the processing was characterized by making current-voltage and capacitance-voltage measurements with MOS capacitor structures at each stage of processing and results showed that trapped charges or interface states could be annealed out at low temperatures. Scanning electron microscopy was used to examine the cross-section of the gate areas after the etching. The results of current-voltage measurements with a Ag/AgCl reference electrode on devices in electrolyte solutions were compared to the results of charge-sheet model calculations including the effect of amphoteric charging sites on the oxide and the potential drops in the electrolyte. Measurements showing the threshold shifts subsequently produced by DNA probe attachment and hybridization will also be presented.

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Zhu, Chengjie, Lingyu Hong, Haw Yang, and Kaushik Sengupta. "A Packaged Multiplexed Fluorescent Bio-molecular Sensor Array and Ultra-Low-Power Wireless Interface in CMOS for Ingestible Electronic Applications." IEEE Sensors Journal, 2022, 1. http://dx.doi.org/10.1109/jsen.2022.3216455.

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Zhu, Chengjie, Yuhan Wen, Tao Liu, Haw Yang, and Kaushik Sengupta. "An Ingestible Pill With CMOS Fluorescence Sensor Array, Bi-Directional Wireless Interface and Packaged Optics for In-Vivo Bio-Molecular Sensing." IEEE Transactions on Biomedical Circuits and Systems, 2023, 1–17. http://dx.doi.org/10.1109/tbcas.2023.3244570.

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Zhang, Shihua, Xiaolong He, Rui Zhang, and Wensheng Deng. "LncR2metasta: a manually curated database for experimentally supported lncRNAs during various cancer metastatic events." Briefings in Bioinformatics, August 7, 2020. http://dx.doi.org/10.1093/bib/bbaa178.

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Abstract Mounting evidence has shown the involvement of long non-coding RNAs (lncRNAs) during various cancer metastatic events (abbreviated as CMEs, e.g. cancer cell invasion, intravasation, extravasation, proliferation, etc.) that may cooperatively facilitate malignant tumor spread and cause massive patient deaths. The study of lncRNA-CME associations might help understand lncRNA functions in metastasis and present reliable biomarkers for early dissemination detection and optimized treatment. Therefore, we developed a database named ‘lncR2metasta’ by manually compiling experimentally supported lncRNAs during various CMEs from existing studies. LncR2metasta documents 1238 associations between 304 lncRNAs and 39 CMEs across 54 human cancer subtypes. Each entry of lncR2metasta contains detailed information on a lncRNA-CME association, including lncRNA symbol, a specific CME, brief description of the association, lncRNA category, lncRNA Entrez or Ensembl ID, lncRNA genomic location and strand, lncRNA experiment, lncRNA expression pattern, detection method, target gene (or pathway) of lncRNA, lncRNA regulatory role on a CME, cancer name and the literature reference. An easy-to-use web interface was deployed in lncR2metasta for its users to easily browse, search and download as well as to submit novel lncRNA-CME associations. LncR2metasta will be a useful resource in cancer research community. It is freely available at http://lncR2metasta.wchoda.com.

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Akin, Hayri E., Jiebin Zhong, Miroslav Penchev, Cengiz S. Ozkan, and Mihrimah Ozkan. "DNA as an Engineering Material: From Assembly to Computation on Silicon." MRS Proceedings 1346 (2011). http://dx.doi.org/10.1557/opl.2011.1075.

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ABSTRACTDNA possesses inherent recognition and self-assembly capabilities, making it attractive templates for constructing functional material structures as building blocks for nanoelectronics. Here we report the use of DNA towards the assembly and electronic functionality of nanoarchitectures based on conjugates of carbon nanotubes (CNTs), nanowires (NWs) and DNA computing on Si-CMOS platform. First, assembly of CNTs with DNA is demonstrated and electrical measurements of these nanoarchitectures demonstrate negative differential resistance in the presence of CNT/DNA interfaces, which indicates a biomimetic route to fabricating resonant tunneling diodes. End-to-end assembly of NWs is realized with designed DNA sequences and process is carried on silicon CMOS based microarray platform. Second, this microarray platform is adopted to perform DNA computing. To begin with, the information present in an image is encoded through the concentrations of various DNA strands via selective hybridization and decoded on microarray to recreate the original image. Lately, various satisfiability (SAT) problems, which has long served as a benchmark problem in DNA computing, are solved on this platform via DNA. The goal in a SAT Problem is to determine appropriate assignments of a set of Boolean variables with values of either “true” or “false” such that the output of the whole Boolean formula is true. Other than making 1st time silicon compatible DNA computing, our studies make us understand bio molecules, especially DNA has various advantages for future hybrid technologies.

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Chen, Yanbo, Changchun Dong, Bo Wu, Guokun He, and Yunjie Li. "Design and analysis of a waterproof capacitive touch key sensor interface circuit." Modern Physics Letters B, March 12, 2021, 2140004. http://dx.doi.org/10.1142/s0217984921400042.

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Traditional mechanical keys are gradually replaced with touch keys. Capacitive touch keys have advantages in achieving higher sensitivity with a longer service life and lower cost. Hence, the capacitive touch key technology is widely used in consumer electronic products. In use of household electric appliances, such as electric kettle, induction cooker and exhaust hood, sometimes the water vapor would condense into visible moisture or even the water would splash out of the pot when overheated, which may lead to a falsely trigger of touch key. So, waterproof becomes a big challenge in household electric appliances. This paper analyzes how water affects capacitive touch key and proposes a waterproof capacitive touch key sensor interface circuit to overcome the challenge. Sensing of touch key capacitor would be influenced only when water covers more than two touch keys. Compensating channels working in certain strategy are used to decrease the influence of water. For the same water capacitor, the bigger threshold voltage, the bigger change of the counting number. A much smaller threshold voltage is better to further weak the effect of water. The circuit is implemented in a standard 110 nm CMOS process. The measured results show that the touch Signal to Noise and Water Disturb Ration (SNWDR) is 20.7 dB which proves that the proposed waterproof capacitive touch key sensor interface circuit is effective against water splash.

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Journal articles on the topic 'Bio/CMOS interface'

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