Journal articles: 'Binary Nitride'

1

FREEMANTLE, MICHAEL. "ELUSIVE BINARY NITRIDE PREPARED." Chemical & Engineering News Archive 80, no. 20 (May 20, 2002): 9. http://dx.doi.org/10.1021/cen-v080n020.p009a.

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Mondal, S., and A. K. Banthia. "Triethanolamine Molybdate, a New Polymeric Precursor for Molybdenum Nitride." Advanced Materials Research 29-30 (November 2007): 195–98. http://dx.doi.org/10.4028/www.scientific.net/amr.29-30.195.

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Nitrides remain a relatively unexplored class of materials primarily due to the difficulties associated with their synthesis and characterization. Several synthetic routes, including high temperature reactions, microwave assisted synthesis, and the use of plasmas, to prepare binary and ternary nitrides have been explored. Transition metal nitrides form a class of materials with unique physical properties, which give them varied applications, as high temperature ceramics, magnetic materials, superconductors or catalysts. They are commonly prepared by high temperature conventional processes, but alternative synthetic approaches have also been explored, more recently, which utilize moderate temperature condition. Transition metal nitrides particularly, molybdenum nitride, niobium nitride, and tungsten nitride have important applications as catalyst in hydrodenitridation reactions. These nitrides have been traditionally synthesized using high temperature nitridation treatments of the oxides. The nitridation temperatures are very high (> 800- 1000 oC). The aim of our work is to synthesize molybdenum nitride by a simple, low-temperature route. The method involves pyrolysis of a polymeric precursor, which was prepared from the condensation reaction between triethanolamine and molybdic acid. The melting point of the product is 180oC. The polymeric precursor and its pyrolyzed products are characterized by Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD). X-ray diffraction shows that molybdenum nitride (MoN) obtained from this method has hexagonal crystal structure. MoN is obtained by this method at very low temperature (~ 400 oC).

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Schnick, Wolfgang. "The First Nitride Spinels—New Synthetic Approaches to Binary Group 14 Nitrides." Angewandte Chemie International Edition 38, no. 22 (November 15, 1999): 3309–10. http://dx.doi.org/10.1002/(sici)1521-3773(19991115)38:22<3309::aid-anie3309>3.0.co;2-u.

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Schwarz, Benjamin, Regina E. Hörth, Ewald Bischoff, Ralf E. Schacherl, and Eric J. Mittemeijer. "The Process of Tungsten-Nitride Precipitation upon Nitriding Ferritic Fe-0.5 at.% W Alloy." Defect and Diffusion Forum 334-335 (February 2013): 284–89. http://dx.doi.org/10.4028/www.scientific.net/ddf.334-335.284.

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The precipitation of tungsten nitride upon internal nitriding of ferritic Fe-0.5 at.% W alloy was investigated at 610°C in a flowing NH3/H2 gas mixture. Different tungsten nitrides developed successively; the thermodynamically stable hexagonal δ-WN could not be detected. The state of deformation of the surface plays an important role for the development of tungsten nitride at the surface. The morphologies of the tungsten nitrides developed at the surface and those precipitated at some depth in the specimen are different. The nitride particles at the surface exhibit mostly an equiaxed morphology (with the size of the order 0.5 µm) and have a crystal structure which can be described as a superstructure derived from hexagonal δ-WN. These nitride particles show a strong preferred orientation with respect to the specimen frame of reference but have no relation with the crystal orientation of the surrounding ferrite matrix. In the bulk, nanosized and finely dispersed platelet-like precipitates grow preferentially along {100}α-Fe. It is unclear whether these precipitates consist of binary iron nitride α´´-Fe16N2 or of a ternary Fe-W-N. Additionally to the finely dispersed particles, bigger nitrides at ferrite grain boundaries develop exhibiting platelet-type morphology and possessing a crystal structure which can be also described as a superstructure derived from hexagonal δ-WN. Upon prolonged nitriding assumed discontinuous precipitation of the initially precipitated finely dispersed nitrides starts from the ferrite-grain boundaries resulting in lamellas consisting of alternate ferrite and hexagonal nitride lamellas, whereas the nitride lamellas having a Pitsch-Schrader orientation relationship with the surrounding ferrite matrix. The nitrides precipitated upon nitriding in the bulk were found to be unstable during H2 reduction at 470°C. Remarkably, upon such low temperature dissolution of the nitrides took place but only the nitrogen from the nitride particles could diffuse out of the nitride platelets and the specimen, leaving W-rich regions (W-clusters) at the location of the original precipitates.

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Kerdoud, Djahida, Faouzia Benkafada, Nora Boussouf, and Chahrazed Benhamideche. "Nitride Materials: Synthesis, Crystal Structures, and Optical Properties." Annales de Chimie - Science des Matériaux 46, no. 2 (April 30, 2022): 103–8. http://dx.doi.org/10.18280/acsm.460206.

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Our research involves the preparation of transition metal nitrides of the composition Mn4N, NbN, Mo2N, TaN and ZrN. The synthesis of Li3N binary alkali metal nitride was also part of this work. Simple and cost-effective methods with relatively low impact on the environment have been privileged in the selection. The experimental work has focused on determining the optimum conditions of synthesis and the convenient high yield route to the desired nitrides, and ultimately improvement of the properties of the final materials. All samples were characterised by X-ray powder diffraction. Their structures will be discussed in more detail here. Optical band gap has been calculated from diffuse reflectance measurements. The air sensitivity of the nitrides was also probed.

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Bauers, Sage R., Aaron Holder, Wenhao Sun, Celeste L. Melamed, Rachel Woods-Robinson, John Mangum, John Perkins, et al. "Ternary nitride semiconductors in the rocksalt crystal structure." Proceedings of the National Academy of Sciences 116, no. 30 (July 3, 2019): 14829–34. http://dx.doi.org/10.1073/pnas.1904926116.

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Inorganic nitrides with wurtzite crystal structures are well-known semiconductors used in optical and electronic devices. In contrast, rocksalt-structured nitrides are known for their superconducting and refractory properties. Breaking this dichotomy, here we report ternary nitride semiconductors with rocksalt crystal structures, remarkable electronic properties, and the general chemical formula MgxTM1−xN (TM = Ti, Zr, Hf, Nb). Our experiments show that these materials form over a broad metal composition range, and that Mg-rich compositions are nondegenerate semiconductors with visible-range optical absorption onsets (1.8 to 2.1 eV) and up to 100 cm2 V−1⋅s−1 electron mobility for MgZrN2 grown on MgO substrates. Complementary ab initio calculations reveal that these materials have disorder-tunable optical absorption, large dielectric constants, and electronic bandgaps that are relatively insensitive to disorder. These ternary MgxTM1−xN semiconductors are also structurally compatible both with binary TMN superconductors and main-group nitride semiconductors along certain crystallographic orientations. Overall, these results highlight MgxTM1−xN as a class of materials combining the semiconducting properties of main-group wurtzite nitrides and rocksalt structure of superconducting transition-metal nitrides.

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Wang, Xinwu, Haobin Sun, Hua Zhang, Changye Li, Chengliang Zhao, Shouji Si, Haibin Yao, Huijun Yu, and Chuanzhong Chen. "Advances in binary nitride coatings for cemented carbides." Journal of Physics: Conference Series 2256, no. 1 (April 1, 2022): 012020. http://dx.doi.org/10.1088/1742-6596/2256/1/012020.

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Abstract With the development of science and technology, cemented carbide tool coatings for machining are updating constantly. Different chemical elements in tool coatings have different performance. This paper introduces the current status of the use of various chemical elements in carbide tool coatings, common chemical elements include metallic elements (transition metal elements, rare-earth elements and aluminium elements) and non-metallic elements (silicon and boron). In addition, this paper presents the current status of research on related basic coatings which includes CrN, TiN, TiCN and CrCN coating, and it looks ahead the develop of tool coating prospect as well.

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Dziubek, K., M. Ceppatelli, D. Scelta, M. Serrano-Ruiz, M. Morana, V. Svitlyk, G. Garbarino, et al. "Binary arsenic nitride synthesized from elements under pressure." Acta Crystallographica Section A Foundations and Advances 78, a2 (August 23, 2022): a180. http://dx.doi.org/10.1107/s2053273322095201.

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9

Ghufran, Muhammad, Ghulam Moeen Uddin, Syed Muhammad Arafat, Muhammad Jawad, and Abdul Rehman. "Development and tribo-mechanical properties of functional ternary nitride coatings: Applications-based comprehensive review." Proceedings of the Institution of Mechanical Engineers, Part J: Journal of Engineering Tribology 235, no. 1 (June 11, 2020): 196–232. http://dx.doi.org/10.1177/1350650120933412.

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Friction and wear are very crucial aspects of the performance, service life, and the operational costs for a mechanical component or equipment. To reduce the friction and wear at the interface of the sliding or mating parts, different conventional binary coatings like TiN, CrN, TiC, etc., have been used in the last two decades. But ternary nitride coatings have replaced the binary coatings due to better tribo-mechanical properties. Now, ternary nitride coatings are being extensively used in several fields such as cutting tools, machinery parts, orthopedic implants, microelectronics, marine equipment, decorative purposes, automotive, aerospace industry, etc. Many researchers have developed and investigated the ternary nitride coatings for different applications. Nonetheless, there is a huge research potential in the development and optimization of the tribo-mechanical properties of the ternary nitride coatings. Therefore, tribo-mechanical studies of the ternary nitride coatings are needed for fostering the new industrial applications. This paper is focused to summarize and compare the tribo-mechanical properties of the ternary nitride coatings comprehensively and aims to explore the novel research directions in the development of the ternary nitride coatings.

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Schwarz, Ulrich, Kai Guo, William P. Clark, Ulrich Burkhardt, Matej Bobnar, Rodrigo Castillo, Lev Akselrud, and Rainer Niewa. "Ferromagnetic ε-Fe2MnN: High-Pressure Synthesis, Hardness and Magnetic Properties." Materials 12, no. 12 (June 21, 2019): 1993. http://dx.doi.org/10.3390/ma12121993.

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The iron manganese nitride Fe2MnN was obtained by high-pressure–high-temperature synthesis from ζ-Fe2N and elemental Mn at 15(2) GPa and 1573(200) K. The phase crystallizes isostructural to binary ε-Fe3N. In comparison to the corresponding binary iron nitride, the microhardness of ε-Fe2MnN is reduced to 6.2(2) GPa. Above about 800 K the ternary compound decomposes exothermally under loss of nitrogen. ε-Fe2MnN is ferromagnetic with a Curie temperature of roughly 402 K.

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11

Leigh, G. J., and P. J. Stotereau. "Investigation of the oxidative pyrolysis of binary metal nitrides, and particularly of boron nitride." Journal of Analytical and Applied Pyrolysis 35, no. 1 (October 1995): 61–76. http://dx.doi.org/10.1016/0165-2370(95)00902-q.

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12

Schnick, Wolfgang. "ChemInform Abstract: The First Nitride Spinels - New Synthetic Approaches to Binary Group 14 Nitrides." ChemInform 31, no. 7 (June 10, 2010): no. http://dx.doi.org/10.1002/chin.200007247.

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Akıncı, Özden, H. Hakan Gürel, and Hilmi Ünlü. "Tight Binding Modelling of Energy Band Structure in Nitride Heterostructures." Journal of Nanoscience and Nanotechnology 8, no. 2 (February 1, 2008): 540–48. http://dx.doi.org/10.1166/jnn.2008.a223.

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We studied the electronic structure of group III–V nitride ternary/binary heterostructures by using a semi-empirical sp3s* tight binding theory, parametrized to provide accurate description of both valence and conductions bands. It is shown that the sp3s* basis, along with the second nearest neighbor (2NN) interactions, spin-orbit splitting of cation and anion atoms, and nonlinear composition variations of atomic energy levels and bond length of ternary, is sufficient to describe the electronic structure of III–V ternary/binary nitride heterostructures. Comparison with experiment shows that tight binding theory provides good description of band structure of III–V nitride semiconductors. The effect of interface strain on valence band offsets in the conventional Al1−xGaxN/GaN and In1−xGaxN/GaN and dilute GaAs1−xNx/GaAs nitride heterostructures is found to be linear function of composition for the entire composition range (0 ≤ x ≤ 1) because of smaller valence band deformations.

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14

Gregoryanz, Eugene, Chrystele Sanloup, M. Somayazulu, James Badro, Guillaume Fiquet, Ho-kwang Mao, and Russell J. Hemley. "Synthesis and characterization of a binary noble metal nitride." Nature Materials 3, no. 5 (April 25, 2004): 294–97. http://dx.doi.org/10.1038/nmat1115.

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15

Kroke, Edwin. "gt-C3N4-The First Stable Binary Carbon(IV) Nitride." Angewandte Chemie International Edition 53, no. 42 (August 28, 2014): 11134–36. http://dx.doi.org/10.1002/anie.201406427.

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Şenel, Mahmut Can, Mevlüt Gürbüz, and Erdem Koç. "Fabrication and characterization of aluminum hybrid composites reinforced with silicon nitride/graphene nanoplatelet binary particles." Journal of Composite Materials 53, no. 28-30 (May 29, 2019): 4043–54. http://dx.doi.org/10.1177/0021998319853329.

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In this study, pure aluminum was reinforced with pure silicon nitride (varying from 1 to 12 wt%), pure graphene nanoplatelets (changing from 0.1 to 0.5 wt%), and their hybrid form (silicon nitride/graphene nanoplatelets) by using powder metallurgy method. The results show that Vickers hardness increased to 57.5 ± 3 HV (Al-9Si3N4) and 57 ± 2.5 HV (Al-0.1GNPs) from 28 ± 2 HV (pure aluminum). Similarly, ultimate compressive strength of the pure silicon nitride and pure graphene nanoplatelet-reinforced aluminum composite was improved to 268 ± 6 MPa (Al-9Si3N4) and 138 ± 4 MPa (Al-0.5GNPs) from 106 ± 4 MPa (pure aluminum), respectively. Interestingly, the highest Vickers hardness, ultimate compressive strength, and ultimate tensile strength of aluminum-silicon nitride-graphene nanoplatelet hybrid composites were determined as 82 ± 3 HV (Al-9Si3N4-0.5GNPs), 334 ± 9 MPa (Al-9Si3N4-0.1GNPs), and 132 MPa (Al-9Si3N4-0.1GNPs), respectively. The Vickers hardness (for Al-9Si3N4-0.5GNPs), ultimate compressive strength (for Al-9Si3N4-0.1GNPs), and ultimate tensile strength (for Al-9Si3N4-0.1GNPs) improved ∼193%, ∼215%, and ∼47% when compared to pure Al, respectively. Above 9 wt% silicon nitride and 0.1 wt% graphene nanoplatelets content, an adverse effect was observed due to the agglomeration of silicon nitride and graphene nanoplatelets in aluminum matrix composites. Also, energy-dispersive X-ray and scanning electron microphotographs confirmed the presence of both silicon nitride and graphene nanoplatelets and uniformly distributed in the aluminum matrix.

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Du, Jin, Zheng Huan Wu, and Quan Wang. "Exploration of Thermal Degradation Kinetics of Epoxy Resin Composites." Key Engineering Materials 904 (November 22, 2021): 202–6. http://dx.doi.org/10.4028/www.scientific.net/kem.904.202.

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The thermal degradation process of epoxy resin/intumescent flame retardant/flake graphite/hexagonal boron nitride (EP/IFR/FGP/h-BN) was analyzed by thermogravimetry. The effects of binary nano flake graphite/hexagonal boron nitride as synergistic flame retardant on the thermal stability. Flynn wall Ozawa method was used to calculate the activation energy of thermal degradation kinetics of EP/IFR/FGP/h-BN. The mechanism functions of the EP/IFR/FGP/h-BN in different reaction stages were determined according to Malek method, and the thermal degradation mechanism of EP/IFR/FGP/h-BN was obtained. The binary nanoFGP/h-BN is helpful to improve the thermal stability of EP.

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Dong, Yuanyuan, Yijie Deng, Jianhuang Zeng, Huiyu Song, and Shijun Liao. "A high-performance composite ORR catalyst based on the synergy between binary transition metal nitride and nitrogen-doped reduced graphene oxide." Journal of Materials Chemistry A 5, no. 12 (2017): 5829–37. http://dx.doi.org/10.1039/c6ta10496g.

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Suda, Jun, and Masahiro Horita. "Polytype Replication in Heteroepitaxial Growth of Nonpolar AlN on SiC." MRS Bulletin 34, no. 5 (May 2009): 348–52. http://dx.doi.org/10.1557/mrs2009.98.

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AbstractZinc-blende and wurtzite are the most common structures for binary compound semiconductors. Aluminum nitrides (AIN), one of the most promising materials for deep ultraviolet light-emitting diodes, have a wurtzite structure as an equilibrium phase due to its strong ionicity. Silicon carbide (SiC) is widely used as a substrate for heteroepitaxial growth of AlN, since SiC has a hexagonal structure whose lattice constant is close to that of AIN. Different from other compound semiconductors, SiC can have many different crystalline structures, called polytypism. Among various polytypes of SiC, large-size high-quality wafers are available for 4H and 6H structures. When AlN is grown on a 4H- or 6H-SiC basal plane (0001), normal, wurtzite-structured AIN is obtained. On the other hand, when AlN is grown on a nonbasal SiC plane, such as nonpolar (1100) or (1120), what is expected? If ideal growth is realized, AIN will follow the crystalline structure of SiC (i.e., the polytype of the SiC substrate will be replicated to the AIN epitaxial layer). Nonpolar nitride growth has attracted much attention to eliminate undesirable internal electric fields due to the polarization in nitride heterostructures. In addition, nonpolar nitride growth on SiC also allows an opportunity to obtain nitrides with new crystalline structures. In this article, the polytype replication growth of AIN on nonpolar SiC substrates is reviewed.

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AHMED, RASHID, FAZAL-E-ALEEM, HARIS RASHID, H. AKBARZADEH, and S. JAVAD HASHEMIFAR. "STRUCTURAL PROPERTIES OF III-NITRIDE BINARY COMPOUNDS: A COMPREHENSIVE STUDY." Modern Physics Letters B 23, no. 08 (March 30, 2009): 1111–27. http://dx.doi.org/10.1142/s0217984909019247.

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Very little information is available about the structural properties of III-nitride binary compounds in the rock-salt phase. We report/review a comprehensive theoretical study of structural properties of these compounds in rock-salt, zinc-blende and wurtzite phases. Calculations have been made using full-potential linearized augmented plane wave plus local orbitals (FP-L(APW+lo)) method as embodied in WIEN2k code framed within density functional theory (DFT). In this approach of calculations, local density approximation (LDA) [J. P. Perdew and Y. Wang, Phys. Rev. B45 (1992) 13244] and generalized gradient approximation (GGA) [J. P. Perdew, K. Burke and M. Ernzerhof, Phys. Rev. Lett.72 (1996) 3865] have been used for exchange-correlation energy and corresponding potential. Calculated results for lattice constants, bulk modulus, its pressure derivative and cohesive energy of these compounds are consistent with the experimental results. Following these calculations, besides many new results for the rock-salt and other phases, a comprehensive review of the structural properties emerges. We also list some peculiar features of these compounds.

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Lu, Jun, Zhigang Zak Fang, Young Joon Choi, and Hong Yong Sohn. "Potential of Binary Lithium Magnesium Nitride for Hydrogen Storage Applications." Journal of Physical Chemistry C 111, no. 32 (July 25, 2007): 12129–34. http://dx.doi.org/10.1021/jp0733724.

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22

Steinbrenner, U., and A. Simon. "Ba3N - a New Binary Nitride of an Alkaline Earth Metal." Zeitschrift für anorganische und allgemeine Chemie 624, no. 2 (February 1998): 228–32. http://dx.doi.org/10.1002/(sici)1521-3749(199802)624:2<228::aid-zaac228>3.0.co;2-8.

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23

Xiao, Wen-Zhi, Gang Xiao, Qing-Yan Rong, and Ling-Ling Wang. "Theoretical discovery of novel two-dimensional VA-N binary compounds with auxiticity." Physical Chemistry Chemical Physics 20, no. 34 (2018): 22027–37. http://dx.doi.org/10.1039/c8cp04158j.

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Chen, Yan, Huasong Qin, Juzheng Song, Zeming Liu, Yilun Liu, and Qing-Xiang Pei. "Exploring the structure–property relationship of three-dimensional hexagonal boron nitride aerogels with gyroid surfaces." Nanoscale 12, no. 18 (2020): 10180–88. http://dx.doi.org/10.1039/d0nr01055c.

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Sultan, Adil, Sharique Ahmad, Tarique Anwer, and Faiz Mohammad. "Binary doped polypyrrole and polypyrrole/boron nitride nanocomposites: preparation, characterization and application in detection of liquefied petroleum gas leaks." RSC Advances 5, no. 128 (2015): 105980–91. http://dx.doi.org/10.1039/c5ra21173e.

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We report an electrical conductivity based rapid response liquefied petroleum gas (LPG) sensor using binary doped polypyrrole and polypyrrole/boron nitride (PPy/BN) nanocomposites as the conductive material.

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Lao, Xun, Xiao Yan, Jiao Xie, and Ya Li Li. "Fabrication of Iron Carbide and Nitride Ceramics with Controlled Magnetic Properties by the Non-Oxide Sol-Gel Process." Key Engineering Materials 512-515 (June 2012): 1429–33. http://dx.doi.org/10.4028/www.scientific.net/kem.512-515.1429.

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The carbodiimide-based non-oxide sol-gel process is a novel route to non-oxide nitride and carbide ceramics. This process has been applied to fabricate ternary or binary silicon based nitride and carbide ceramics. Based on this non-oxide sol-gel process, iron carbide and nitride have been fabricated by reaction of iron trichloride with bis(trimethylsilyl)carbodiimide to form FeCN gel followed by pyrolysis in argon flow at different temperatures. The iron carbide material obtained at 700 °C exhibits hard ferromagnetic properties whereas α-iron along with iron nitride formed at 1300 °C shows soft ferromagnetic properties. Therefore, iron carbide and nitride ceramics with controlled magnetic properties can be obtained along this novel non-oxygen sol-gel process by controlled pyrolysis. The pyrolysis behavior was investigated based on thermal gravimetric analysis coupled with differential scanning calorimetry. The phase structures of the iron carbide and nitride are identified by X-ray diffraction and the magnetic properties of the materials are measured by magnetometer.

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Schön, Johann, Alexander Hannemann, Guneet Sethi, Vladimirovich Pentin, and Martin Jansen. "Modelling structure and properties of amorphous silicon boron nitride ceramics." Processing and Application of Ceramics 5, no. 2 (2011): 49–61. http://dx.doi.org/10.2298/pac1102049s.

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Silicon boron nitride is the parent compound of a new class of high-temperature stable amorphous ceramics constituted of silicon, boron, nitrogen, and carbon, featuring a set of properties that is without precedent, and represents a prototypical random network based on chemical bonds of predominantly covalent character. In contrast to many other amorphous materials of technological interest, a-Si3B3N7 is not produced via glass formation, i.e. by quenching from a melt, the reason being that the binary components, BN and Si3N4, melt incongruently under standard conditions. Neither has it been possible to employ sintering of ?m-size powders consisting of binary nitrides BN and Si3N4. Instead, one employs the so-called sol-gel route starting from single component precursors such as TADB ((SiCl3)NH(BCl2)). In order to determine the atomic structure of this material, it has proven necessary to simulate the actual synthesis route. Many of the exciting properties of these ceramics are closely connected to the details of their amorphous structure. To clarify this structure, it is necessary to employ not only experimental probes on many length scales (X-ray, neutron- and electron scattering; complex NMR experiments; IR- and Raman scattering), but also theoretical approaches. These address the actual synthesis route to a-Si3B3N7, the structural properties, the elastic and vibrational properties, aging and coarsening behaviour, thermal conductivity and the metastable phase diagram both for a-Si3B3N7 and possible silicon boron nitride phases with compositions different from Si3N4 : BN = 1 : 3. Here, we present a short comprehensive overview over the insights gained using molecular dynamics and Monte Carlo simulations to explore the energy landscape of a-Si3B3N7, model the actual synthesis route and compute static and transport properties of a-Si3B3N7.

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Leitner, Jindřich. "Binary AIII nitride solid solutions: Estimation of the excess Gibbs energy." Journal of Physics and Chemistry of Solids 58, no. 9 (September 1997): 1329–34. http://dx.doi.org/10.1016/s0022-3697(97)00035-8.

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Probst, J., U. Gbureck, and R. Thull. "Binary nitride and oxynitride PVD coatings on titanium for biomedical applications." Surface and Coatings Technology 148, no. 2-3 (December 2001): 226–33. http://dx.doi.org/10.1016/s0257-8972(01)01357-3.

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Roul, Basanta, Mahesh Kumar, Mohana K. Rajpalke, Thirumaleshwara N. Bhat, and S. B. Krupanidhi. "Binary group III-nitride based heterostructures: band offsets and transport properties." Journal of Physics D: Applied Physics 48, no. 42 (September 24, 2015): 423001. http://dx.doi.org/10.1088/0022-3727/48/42/423001.

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Ashritha, M. G., and K. Hareesh. "A review on Graphitic Carbon Nitride based binary nanocomposites as supercapacitors." Journal of Energy Storage 32 (December 2020): 101840. http://dx.doi.org/10.1016/j.est.2020.101840.

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He, Jianyun, Shijun Liu, Yunqi Li, Shangjing Zeng, Yanlong Qi, Long Cui, Quanquan Dai, and Chenxi Bai. "Fabrication of boron nitride nanosheet/polymer composites with tunable thermal insulating properties." New Journal of Chemistry 43, no. 12 (2019): 4878–85. http://dx.doi.org/10.1039/c8nj06236f.

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Schultz-Coulon, Verena, and Wolfgang Schnick. "CaMg2N2 – ein gemischtes Erdalkalimetallnitrid mit anti-La2O3-Struktur / CaMg2N2 – a Mixed Alkaline-Earth Metal Nitride with anti-La2O3 Structure." Zeitschrift für Naturforschung B 50, no. 4 (April 1, 1995): 619–22. http://dx.doi.org/10.1515/znb-1995-0425.

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CaMg2N2 (trigonal, P3̄ m 1 (Nr. 164); a = 354.046(1), c = 609.079(2) pm; Z = 1) is isotypic to the anti-La2O3 structure with octahedral and tetrahedral coordination for Ca2+ and Mg2+ ions, respectively. The compound has been prepared by the reaction o f the binary nitrides Ca3N2 and Mg3N2 (molar ratio 1:2) in a tungsten crucible under a pure nitrogen atmosphere at 1050 °C. The formation of the solid CaMg2N2 may be interpreted in analogy to reactions o f related oxides as an acid-base reaction between the binary nitrides with different coordination tendencies of Ca2+ and Mg2+ ions. An analysis of the binary aristotype anti-La2O3 indicates that this structure is predisposed for building ternary phases.

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Justice, J., A. Kadiyala, J. Dawson, and D. Korakakis. "Group III-Nitride Based Electronic and Optoelectronic Integrated Circuits for Smart Lighting Applications." MRS Proceedings 1492 (2013): 123–28. http://dx.doi.org/10.1557/opl.2013.369.

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ABSTRACTWith general lighting applications being responsible for over 20% of the energy consumption in the United States, advances in solid-state lighting have the potential for considerable energy and cost savings. The United States Department of Energy predicts that the increased use of solid state lighting will result in a 46% lighting consumption energy savings by the year 2030. Smart lighting systems have the potential for reducing energy costs while also providing a means for short distance data transmission via free space optics. The group III-nitride (III-N) family of materials, including aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN), their binary and ternary alloys, are uniquely situated to provide light emitting diodes (LEDs) across the full visible spectrum, photodetectors (PDs) and high power, high speed transistors. In this work, aluminum gallium nitride (AlGaN) / GaN high electron mobility transistors (HEMTs) and indium gallium nitride (InGaN) photodiodes (PDs) are fabricated and characterized. HEMTs and LEDs (or PDs) are grown on the same substrate for the purpose of creating electronic and optoelectronic integrated circuits.

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Lo Nigro, Raffaella, Patrick Fiorenza, Giuseppe Greco, Emanuela Schilirò, and Fabrizio Roccaforte. "Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices." Materials 15, no. 3 (January 22, 2022): 830. http://dx.doi.org/10.3390/ma15030830.

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High-κ dielectrics are insulating materials with higher permittivity than silicon dioxide. These materials have already found application in microelectronics, mainly as gate insulators or passivating layers for silicon (Si) technology. However, since the last decade, the post-Si era began with the pervasive introduction of wide band gap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), which opened new perspectives for high-κ materials in these emerging technologies. In this context, aluminium and hafnium oxides (i.e., Al2O3, HfO2) and some rare earth oxides (e.g., CeO2, Gd2O3, Sc2O3) are promising high-κ binary oxides that can find application as gate dielectric layers in the next generation of high-power and high-frequency transistors based on SiC and GaN. This review paper gives a general overview of high-permittivity binary oxides thin films for post-Si electronic devices. In particular, focus is placed on high-κ binary oxides grown by atomic layer deposition on WBG semiconductors (silicon carbide and gallium nitride), as either amorphous or crystalline films. The impacts of deposition modes and pre- or postdeposition treatments are both discussed. Moreover, the dielectric behaviour of these films is also presented, and some examples of high-κ binary oxides applied to SiC and GaN transistors are reported. The potential advantages and the current limitations of these technologies are highlighted.

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36

Ahmad, Ashfaq, Pawel Strak, Kamil Koronski, Pawel Kempisty, Konrad Sakowski, Jacek Piechota, Izabella Grzegory, et al. "Critical Evaluation of Various Spontaneous Polarization Models and Induced Electric Fields in III-Nitride Multi-Quantum Wells." Materials 14, no. 17 (August 30, 2021): 4935. http://dx.doi.org/10.3390/ma14174935.

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In this paper, ab initio calculations are used to determine polarization difference in zinc blende (ZB), hexagonal (H) and wurtzite (WZ) AlN-GaN and GaN-InN superlattices. It is shown that a polarization difference exists between WZ nitride compounds, while for H and ZB lattices the results are consistent with zero polarization difference. It is therefore proven that the difference in Berry phase spontaneous polarization for bulk nitrides (AlN, GaN and InN) obtained by Bernardini et al. and Dreyer et al. was not caused by the different reference phase. These models provided absolute values of the polarization that differed by more than one order of magnitude for the same material, but they provided similar polarization differences between binary compounds, which agree also with our ab initio calculations. In multi-quantum wells (MQWs), the electric fields are generated by the well-barrier polarization difference; hence, the calculated electric fields are similar for the three models, both for GaN/AlN and InN/GaN structures. Including piezoelectric effect, which can account for 50% of the total polarization difference, these theoretical data are in satisfactory agreement with photoluminescence measurements in GaN/AlN MQWs. Therefore, the three models considered above are equivalent in the treatment of III-nitride MQWs and can be equally used for the description of the electric properties of active layers in nitride-based optoelectronic devices.

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Jiang, Ming, Yingjie Li, Zhiyi Lu, Xiaoming Sun, and Xue Duan. "Binary nickel–iron nitride nanoarrays as bifunctional electrocatalysts for overall water splitting." Inorganic Chemistry Frontiers 3, no. 5 (2016): 630–34. http://dx.doi.org/10.1039/c5qi00232j.

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Electrochemical water splitting provides a facile method for high-purity hydrogen production, but electro-catalysts with a stable bifunctional activity towards both oxygen and hydrogen evolution have been rarely developed.

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38

Wang, Wei, Xucai Kan, Xiansong Liu, Yan Dao, Shuangjiu Feng, Yong Li, Chaocheng Liu, Mudssir Shezad, Zhitao Zhang, and Khalid Mehmood Ur Rehman. "Analysis of the Griffiths–like phase observed in binary ε-Fe2N nitride." Applied Physics Letters 117, no. 12 (September 21, 2020): 122408. http://dx.doi.org/10.1063/5.0021190.

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39

Rupp, T., G. Henn, and H. Schröder. "Laser-induced reactive epitaxy of binary and ternary group III nitride heterostructures." Applied Surface Science 186, no. 1-4 (January 2002): 429–34. http://dx.doi.org/10.1016/s0169-4332(01)00778-4.

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Fan, Changzeng. "Valence electronic structure and cohesive property of a binary noble metal nitride." Chinese Science Bulletin 50, no. 11 (2005): 1079. http://dx.doi.org/10.1360/982004-622.

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41

Niewa, Rainer. "Na3N—An Original Synthetic Route for a Long Sought After Binary Nitride." Angewandte Chemie International Edition 41, no. 10 (May 17, 2002): 1701–2. http://dx.doi.org/10.1002/1521-3773(20020517)41:10<1701::aid-anie1701>3.0.co;2-9.

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42

STEINBRENNER, U., and A. SIMON. "ChemInform Abstract: Ba3N - A New Binary Nitride of an Alkaline Earth Metal." ChemInform 29, no. 17 (June 23, 2010): no. http://dx.doi.org/10.1002/chin.199817004.

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43

Wallenberger, Frederick T., and Paul C. Nordine. "Amorphous silicon nitride fibers grown from the vapor phase." Journal of Materials Research 9, no. 3 (March 1994): 527–30. http://dx.doi.org/10.1557/jmr.1994.0527.

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Using high reactor pressures (>1 bar) and a unique rate control mechanism, three fibers were recently obtained by laser assisted chemical vapor deposition (LCVD) having elemental (i.e., boron, carbon, and silicon) compositions, small diameters (>9 μm), and surprisingly high growth rates (0.3–1.1 mm/s). By reacting silane and ammonia at high pressures (>1 bar) near the focus of a Nd-YAG laser beam, we have now obtained the first LCVD fibers with binary (i.e., silicon-nitrogen and silicon nitride) compositions having small diameters and high growth rates (0.34–0.74 mm/s). These fibers were amorphous.

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44

Lyashkov, Kirill, Valery Shabashov, Andrey Zamatovskii, Kirill Kozlov, Natalya Kataeva, Evgenii Novikov, and Yurii Ustyugov. "Structure-Phase Transformations in the Course of Solid-State Mechanical Alloying of High-Nitrogen Chromium-Manganese Steels." Metals 11, no. 2 (February 9, 2021): 301. http://dx.doi.org/10.3390/met11020301.

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The solid-state mechanical alloying (MA) of high-nitrogen chromium-manganese austenite steel—MA in a planetary ball mill, —was studied by methods of Mössbauer spectroscopy and transmission electron microscopy (TEM). In the capacity of a material for the alloying we used mixtures of the binary Fe–Mn and Fe–Cr alloys with the nitrides CrN (Cr2N) and Mn2N. It is shown that ball milling of the mixtures has led to the occurrence of the α → γ transitions being accompanied by the (i) formation of the solid solutions supersaturated with nitrogen and by (ii) their decomposition with the formation of secondary nitrides. The austenite formed by the ball milling and subsequent annealing at 700–800 °C, was a submicrocrystalline one that contained secondary nano-sized crystalline CrN (Cr2N) nitrides. It has been established that using the nitride Mn2N as nitrogen-containing addition is more preferable for the formation and stabilization of austenite—in the course of the MA and subsequent annealing—because of the formation of the concentration-inhomogeneous regions of γ phase enriched with austenite-forming low-mobile manganese.

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45

Torchane, L., P. Bilger, J. Dulcy, and M. Gantois. "Control of iron nitride layers growth kinetics in the binary Fe-N system." Metallurgical and Materials Transactions A 27, no. 7 (July 1996): 1823–35. http://dx.doi.org/10.1007/bf02651932.

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Huang, Xinfan, Zhifeng Li, Wenqi Gao, Jin Zhou, Xiaofeng Gu, and Kunji Chen. "Silicon Nitride Binary-Phase Optical Elements with Both Functions of Splitting and Foscussing." Physica Status Solidi (a) 147, no. 2 (February 16, 1995): K111—K114. http://dx.doi.org/10.1002/pssa.2211470247.

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47

Low, It Meng, and Wei Kong Pang. "Thermal Stability of MAX Phases." Key Engineering Materials 617 (June 2014): 153–58. http://dx.doi.org/10.4028/www.scientific.net/kem.617.153.

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The susceptibility of MAX phases to thermal dissociation at 1300-1550 °C in high vacuum has been studied using in-situ neutron diffraction. Above 1400 °C, MAX phases decomposed to binary carbide (e.g. TiCx) or binary nitride (e.g. TiNx), primarily through the sublimation of A-elements such as Al or Si, which results in a porous surface layer of MXx being formed. Positive activation energies were determined for decomposed MAX phases with coarse pores but a negative activation energy when the pore size was less than 1.0 μm. The insights for tailor-design of MAX phases with controlled thermal stability and intercalated MXenes for energy storage are addressed.

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48

Weitzer, F., K. Remschnig, J. C. Schuster, and P. Rogl. "Phase equilibria and structural chemistry in the ternary systems M–Si–N and M–B–N (M = Al, Cu, Zn, Ag, Cd, In, Sn, Sb, Au, Tl, Pb, Bi)." Journal of Materials Research 5, no. 10 (October 1990): 2152–59. http://dx.doi.org/10.1557/jmr.1990.2152.

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Phase equilibria in the ternary systems M–Si–N and M–B–N (M = Cu, Ag, Au, Zn, Cd, Al, In, Tl, Sn, Pb, Sb, and Bi) at temperatures 50–100 °C below the melting point of the metal components were investigated by means of x-ray powder analysis and are represented in the form of isothermal sections. No ternary compound formation was observed in any of the combinations M–Si–N and M–B–N. Silicon nitride and boron nitride, respectively, coexist with all metals investigated and with all binary compounds stable at the chosen temperatures. From unit cell dimensions negligible mutual solid solubilities are indicated between Si3N4 or BN and the metal components.

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Bastin, G. F., and H. J. M. Heijligers. "Quantitative EPMA of nitrogen : A tricky element in the electron-probe microanalyzer." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (August 1992): 1622–23. http://dx.doi.org/10.1017/s0424820100132741.

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Among the ultra-light elements B, C, N, and O nitrogen is the most difficult element to deal with in the electron probe microanalyzer. This is mainly caused by the severe absorption that N-Kα radiation suffers in carbon which is abundantly present in the detection system (lead-stearate crystal, carbonaceous counter window). As a result the peak-to-background ratios for N-Kα measured with a conventional lead-stearate crystal can attain values well below unity in many binary nitrides . An additional complication can be caused by the presence of interfering higher-order reflections from the metal partner in the nitride specimen; notorious examples are elements such as Zr and Nb. In nitrides containing these elements is is virtually impossible to carry out an accurate background subtraction which becomes increasingly important with lower and lower peak-to-background ratios. The use of a synthetic multilayer crystal such as W/Si (2d-spacing 59.8 Å) can bring significant improvements in terms of both higher peak count rates as well as a strong suppression of higher-order reflections.

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50

Pogrebnjak, Alexander, Kateryna Smyrnova, and Oleksandr Bondar. "Nanocomposite Multilayer Binary Nitride Coatings Based on Transition and Refractory Metals: Structure and Properties." Coatings 9, no. 3 (February 27, 2019): 155. http://dx.doi.org/10.3390/coatings9030155.

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One area of constant interest in many fields of industry is development of functional multilayer coatings that possess excellent performance characteristics. That is why in our brief review the results of studies of structure and properties of multilayer structures based on binary nitrides of transition or refractory metals obtained by various physical-vapor deposition (PVD) techniques are presented. The influence of substrate temperature, substrate bias voltage, bilayer thickness and interface boundaries on the structure of coatings and their properties, such as hardness, plasticity, wear and corrosion resistance, are discussed in detail. This review may be useful for students and growing community of researchers interested in the synthesis-structure-properties relationship in multilayer coatings based on metal nitrides.

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Journal articles on the topic 'Binary Nitride'

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