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Journal articles on the topic 'Axial heterostructure nanowires'

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Author: Grafiati

Published: 10 December 2022

Last updated: 28 January 2023

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1

Лещенко, Е. Д., and В. Г. Дубровский. "Моделирование профиля состава осевой гетероструктуры InSb/GaInSb/InSb в нитевидных нанокристаллах." Письма в журнал технической физики 48, no. 19 (2022): 20. http://dx.doi.org/10.21883/pjtf.2022.19.53590.19339.

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The formation of the double InSb/GaInSb/InSb heterostructure in self-catalyzed and Au-catalyzed nanowires is studied theoretically. We calculate the compositional profiles across the axial heterostructures and study the influence of different growth parameters on the heterointerface properties, including temperature, Sb and Au concentrations.

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2

Wang, Yuda, Parveen Kumar, Leigh Morris Smith, Howard E. Jackson, Jan M. Yarrison-Rice, Craig Pryor, Jung-Hyun Kang, Qiang Gao, Hark Hoe Tan, and Chennupati Jagadish. "Tuning Band Energies in a Combined Axial and Radial GaAs/GaP Heterostructure." MRS Proceedings 1659 (2014): 139–42. http://dx.doi.org/10.1557/opl.2014.355.

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ABSTRACTWe use Raman scattering to study the spatially-resolved strain and stress in a complex zinc blende GaAs/GaP heterostructured nanowire which contains both axial and radial interfaces. The nanowires are grown by metal-organic chemical vapor deposition in the [111] direction with Au nano particles as catalysts, High spatial resolution Raman scans along the nanowires show the GaAs/GaP interface is clearly identifiable. We interpret the phonon energy shifts in each material as one approaches the interface.

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3

Anandan, Deepak, Che-Wei Hsu, and Edward Yi Chang. "Growth of III-V Antimonide Heterostructure Nanowires on Silicon Substrate for Esaki Tunnel Diode." Materials Science Forum 1055 (March 4, 2022): 1–6. http://dx.doi.org/10.4028/p-y19917.

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Integration of low bandgap antimonide based nanowires on Si substrate has been attracting huge attention for opto-electronic applications. In this work we demonstrated InAs/InSb and InAs/GaSb heterostructure nanowires on Si substrate by metal organic chemical vapor deposition. We grew high quality axial InSb heterostructure segment on InAs stem by self-catalyzed growth technique, which paves a way to tune the crystal structure of InSb. In case of InAs-GaSb core-shell architecture, GaSb crystal quality highly depends on InAs core. We successfully demonstrated basic electrical characteristics of InAs-GaSb core-shell nanowire which exhibits negative differential resistance at 0.8 V and peak-to-valley current ratio of 3.84.

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4

Zhang, Guoqiang, Masato Takiguchi, Kouta Tateno, Takehiko Tawara, Masaya Notomi, and Hideki Gotoh. "Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature." Science Advances 5, no. 2 (February 2019): eaat8896. http://dx.doi.org/10.1126/sciadv.aat8896.

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Telecom-band single nanowire lasers made by the bottom-up vapor-liquid-solid approach, which is technologically important in optical fiber communication systems, still remain challenging. Here, we report telecom-band single nanowire lasers operating at room temperature based on multi-quantum-disk InP/InAs heterostructure nanowires. Transmission electron microscopy studies show that highly uniform multi-quantum-disk InP/InAs structure is grown in InP nanowires by self-catalyzed vapor-liquid-solid mode using indium particle catalysts. Optical excitation of individual nanowires yielded lasing in telecom band operating at room temperature. We show the tunability of laser wavelength range in telecom band by modulating the thickness of single InAs quantum disks through quantum confinement along the axial direction. The demonstration of telecom-band single nanowire lasers operating at room temperature is a major step forward in providing practical integrable coherent light sources for optoelectronics and data communication.

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5

Shwartz, Nataliya L., Alla G. Nastovjak, and Igor G. Neizvestny. "Peculiarities of axial and radial Ge–Si heterojunction formation in nanowires: Monte Carlo simulation." Pure and Applied Chemistry 84, no. 12 (May 27, 2012): 2619–28. http://dx.doi.org/10.1351/pac-con-11-12-05.

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The process of axial and radial Si–Ge heterostructure formation during nanowire growth by vapor–liquid–solid (VLS) mechanism was studied using Monte Carlo (MC) simulation. It was demonstrated that radial growth can be stimulated by adding chemical species that decrease the activation energy of precursor dissociation or the solubility of semiconductor material in catalyst drop. Reducing the Si adatom diffusion length also leads to Si shell formation around the Ge core. The influence of growth conditions on the composition and abruptness of axial Ge–Si heterostructures was analyzed. The composition of the GexSi1–x axial heterojunction (HJ) was found to be dependent on the flux ratio, the duration of Si and Ge deposition, and the catalyst drop diameter. Maximal Ge concentration in the HJ is dependent on Ge deposition time owing to gradual changing of catalyst drop composition after switching Ge and Si fluxes. The dependence of junction abruptness on the nanowire diameter was revealed: in the adsorption-induced growth mode, the abruptness decreased with diameter, and in the diffusion-induced mode it increased. This implies that abrupt Ge–Si HJ in nanowires with small diameter can be obtained only in the chemical vapor deposition (CVD) process with negligible diffusion component of growth.

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6

Johar, Muhammad Ali, Hyun-Gyu Song, Aadil Waseem, Jin-Ho Kang, Jun-Seok Ha, Yong-Hoon Cho, and Sang-Wan Ryu. "Ultrafast carrier dynamics of conformally grown semi-polar (112̄2) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires." Nanoscale 11, no. 22 (2019): 10932–43. http://dx.doi.org/10.1039/c9nr02823d.

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7

Wen, C. Y., M. C. Reuter, J. Bruley, J. Tersoff, S. Kodambaka, E. A. Stach, and F. M. Ross. "Formation of Compositionally Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires." Science 326, no. 5957 (November 26, 2009): 1247–50. http://dx.doi.org/10.1126/science.1178606.

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We have formed compositionally abrupt interfaces in silicon-germanium (Si-Ge) and Si-SiGe heterostructure nanowires by using solid aluminum-gold alloy catalyst particles rather than the conventional liquid semiconductor–metal eutectic droplets. We demonstrated single interfaces that are defect-free and close to atomically abrupt, as well as quantum dots (i.e., Ge layers tens of atomic planes thick) embedded within Si wires. Real-time imaging of growth kinetics reveals that a low solubility of Si and Ge in the solid particle accounts for the interfacial abruptness. Solid catalysts that can form functional group IV nanowire-based structures may yield an extended range of electronic applications.

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8

Cornet, D. M., and R. R. LaPierre. "InGaAs/InP core–shell and axial heterostructure nanowires." Nanotechnology 18, no. 38 (August 31, 2007): 385305. http://dx.doi.org/10.1088/0957-4484/18/38/385305.

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9

Thuong, Nguyen Thi, Nguyen Viet Minh, Nguyen Ngoc Tuan, and Vu Ngoc Tuoc. "Density Functional Based Tight Binding Study on Wurzite Core-Shell Nanowires Heterostructures Zno/Zns." Communications in Physics 21, no. 3 (September 19, 2011): 225. http://dx.doi.org/10.15625/0868-3166/21/3/172.

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We present a Density Functional Based Tight Binding study on the crystallography and electronic structures of various II-VI wurtzite core-shell, core-multi-shell ZnO/ZnS unsaturated nanowires (NW) of circular and hexagonal cross sections and examine the dependence of interface stress and formation energy on nanowire lateral size with diameter range from 20$\mathring{A}$ upto 40$\mathring{A}$. Young's modulus of the wires along the axial growth direction have been estimated. Also the tensile tests have been applied for various wires to show the diameter dependences of their mechanical properties. The electronic properties of these heterostructure nanowires (e.g., Projected Band Structure, Density of State, charge transfer via Mulliken population analysis) also exhibit diameter-dependent behavior.

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10

Sheehan, Martin, Quentin M. Ramasse, Hugh Geaney, and Kevin M. Ryan. "Linear heterostructured Ni2Si/Si nanowires with abrupt interfaces synthesised in solution." Nanoscale 10, no. 40 (2018): 19182–87. http://dx.doi.org/10.1039/c8nr05388j.

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11

Kang, Joohoon, Wooyoung Shim, Seunghyun Lee, Jong Wook Roh, Jin-Seo Noh, Peter W. Voorhees, and Wooyoung Lee. "Thermodynamic-enabled synthesis of Bi/Bi14Te6 axial heterostructure nanowires." Journal of Materials Chemistry A 1, no. 7 (2013): 2395. http://dx.doi.org/10.1039/c2ta00203e.

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12

Geng, Hui, Xin Yan, Xia Zhang, Junshuai Li, Yongqing Huang, and Xiaomin Ren. "Analysis of critical dimensions for axial double heterostructure nanowires." Journal of Applied Physics 112, no. 11 (December 2012): 114307. http://dx.doi.org/10.1063/1.4767927.

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13

Sadowski, T., and R. Ramprasad. "Core/Shell CdSe/CdTe Heterostructure Nanowires Under Axial Strain." Journal of Physical Chemistry C 114, no. 4 (January 7, 2010): 1773–81. http://dx.doi.org/10.1021/jp907150d.

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14

Koryakin, A. A., N. V. Sibirev, and D. A. Zeze. "Modeling of axial heterostructure formation in ternary III-V nanowires." Journal of Physics: Conference Series 643 (November 2, 2015): 012007. http://dx.doi.org/10.1088/1742-6596/643/1/012007.

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15

Stokes, Killian, Grace Flynn, Hugh Geaney, Gerard Bree, and Kevin M. Ryan. "Axial Si–Ge Heterostructure Nanowires as Lithium-Ion Battery Anodes." Nano Letters 18, no. 9 (August 6, 2018): 5569–75. http://dx.doi.org/10.1021/acs.nanolett.8b01988.

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16

Ghalamestani, Sepideh Gorji, Martin Ek, and Kimberly A. Dick. "Realization of single and double axial InSb-GaSb heterostructure nanowires." physica status solidi (RRL) - Rapid Research Letters 8, no. 3 (January 20, 2014): 269–73. http://dx.doi.org/10.1002/pssr.201308331.

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17

Dubrovskii, V. G. "A model of axial heterostructure formation in III–V semiconductor nanowires." Technical Physics Letters 42, no. 3 (March 2016): 332–35. http://dx.doi.org/10.1134/s1063785016030196.

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18

Zhao, Fuzhen, Huicong Liu, Houyu Zhu, Xiaoyu Jiang, Liqun Zhu, Weiping Li, and Haining Chen. "Amorphous/amorphous Ni–P/Ni(OH)2 heterostructure nanotubes for an efficient alkaline hydrogen evolution reaction." Journal of Materials Chemistry A 9, no. 16 (2021): 10169–79. http://dx.doi.org/10.1039/d1ta01062j.

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19

Ye, Han, Pengfei Lu, Zhongyuan Yu, Yuxin Song, Donglin Wang, and Shumin Wang. "Critical Thickness and Radius for Axial Heterostructure Nanowires Using Finite-Element Method." Nano Letters 9, no. 5 (May 13, 2009): 1921–25. http://dx.doi.org/10.1021/nl900055x.

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20

Dhar, J. C., A. Mondal, N. K. Singh, S. Chakrabartty, A. Bhattacharyya, and K. K. Chattopadhyay. "Effect of annealing on SiOx-TiO2 axial heterostructure nanowires and improved photodetection." Journal of Applied Physics 114, no. 24 (December 28, 2013): 244310. http://dx.doi.org/10.1063/1.4858420.

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21

Bauer, J., V. Gottschalch, H. Paetzelt, and G. Wagner. "VLS growth of GaAs/(InGa)As/GaAs axial double-heterostructure nanowires by MOVPE." Journal of Crystal Growth 310, no. 23 (November 2008): 5106–10. http://dx.doi.org/10.1016/j.jcrysgro.2008.07.059.

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22

Lohani, Jaya, Shivani Varshney, Dipendra S. Rawal, and Renu Tyagi. "Vertically aligned nanowires comprising AlGaN/GaN axial heterostructure by convenient maskless reactive ion etching." Materials Research Express 6, no. 10 (August 7, 2019): 105001. http://dx.doi.org/10.1088/2053-1591/ab35af.

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23

Geaney, Hugh, Emma Mullane, Quentin M. Ramasse, and Kevin M. Ryan. "Atomically Abrupt Silicon–Germanium Axial Heterostructure Nanowires Synthesized in a Solvent Vapor Growth System." Nano Letters 13, no. 4 (March 25, 2013): 1675–80. http://dx.doi.org/10.1021/nl400146u.

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24

Jingwei Guo, 郭经纬, 黄辉 Hui Huang, 任晓敏 Xiaomin Ren, 颜鑫 Xin Yan, 蔡世伟 Shiwei Cai, 黄永清 Yongqing Huang, 王琦 Qi Wang, 张霞 Xia Zhang, and 王伟 Wei Wang. "Stacking-faults-free zinc blende GaAs/AlGaAs axial heterostructure nanowires during vapor-liquid-solid growth." Chinese Optics Letters 9, no. 4 (2011): 041601–41604. http://dx.doi.org/10.3788/col201109.041601.

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25

Krogstrup, Peter, Jun Yamasaki, Claus B. Sørensen, Erik Johnson, Jakob B. Wagner, Robert Pennington, Martin Aagesen, Nobuo Tanaka, and Jesper Nygård. "Junctions in Axial III−V Heterostructure Nanowires Obtained via an Interchange of Group III Elements." Nano Letters 9, no. 11 (November 11, 2009): 3689–93. http://dx.doi.org/10.1021/nl901348d.

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26

Guo, Jingwei, Hui Huang, Xiaomin Ren, Xin Yan, Shiwei Cai, Wei Wang, Yongqing Huang, Qi Wang, and Xia Zhang. "Realizing Zinc Blende GaAs/AlGaAs Axial and Radial Heterostructure Nanowires by Tuning the Growth Temperature." Journal of Materials Science & Technology 27, no. 6 (January 2011): 507–12. http://dx.doi.org/10.1016/s1005-0302(11)60099-6.

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27

Flynn, Grace, Quentin M. Ramasse, and Kevin M. Ryan. "Solvent Vapor Growth of Axial Heterostructure Nanowires with Multiple Alternating Segments of Silicon and Germanium." Nano Letters 16, no. 1 (December 18, 2015): 374–80. http://dx.doi.org/10.1021/acs.nanolett.5b03950.

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28

Paek, Jihyun, Masahito Yamaguchi, and Hiroshi Amano. "MBE–VLS growth of catalyst-free III–V axial heterostructure nanowires on (111)Si substrates." Journal of Crystal Growth 323, no. 1 (May 2011): 315–18. http://dx.doi.org/10.1016/j.jcrysgro.2010.11.124.

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29

Kierdaszuk, Jakub, Mateusz Tokarczyk, Krzysztof M. Czajkowski, Rafał Bożek, Aleksandra Krajewska, Aleksandra Przewłoka, Wawrzyniec Kaszub, et al. "Surface-enhanced Raman scattering in graphene deposited on Al Ga1−N/GaN axial heterostructure nanowires." Applied Surface Science 475 (May 2019): 559–64. http://dx.doi.org/10.1016/j.apsusc.2019.01.040.

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30

Yuan, Huibo, Lin Li, Zaijin Li, Yong Wang, Yi Qu, Xiaohui Ma, and Guojun Liu. "Axial heterostructure of Au-catalyzed InGaAs/GaAs nanowires grown by metal-organic chemical vapor deposition." Chemical Physics Letters 692 (January 2018): 28–32. http://dx.doi.org/10.1016/j.cplett.2017.11.061.

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31

Pedapudi, Michael Cholines, and Jay Chandra Dhar. "A novel high performance photodetection based on axial NiO/β-Ga₂O₃ p-n junction heterostructure nanowires array." Nanotechnology 33, no. 25 (March 30, 2022): 255203. http://dx.doi.org/10.1088/1361-6528/ac5b54.

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Abstract Axial NiO/β-Ga2O3 heterostructure (HS) nanowires (NWs) array was fabricated on Si substrate by catalytic free and controlled growth process called glancing angle deposition technique. The field emission scanning electron microscope image shows the formation of well aligned and vertical NWs. A typical high resolution transmission electron microscope image confirms the formation of axial HS NWs consisting of β-Ga2O3 NW at the top and NiO NW at the bottom with an overall length ∼213 nm. A large photo absorption and also photoemission was observed for axial NiO/β-Ga2O3 HS NW as compared to the NiO/β-Ga2O3 HS thin film sample. Moreover, x-ray photoelectron spectroscopy analysis prove that there are higher oxygen vacancies with no deviation in electronic state after the formation of axial HS NW. Also, a high performance photodetector (PD) with a very low dark current of 6.31 nA and fast photoresponse with rise time and fall time of 0.28 s and 0.17 s respectively at +4 V was achieved using the axial NiO/β-Ga2O3 HS NWs. The type-II HS p-n junction formation and efficient charge separation at the small wire axis also makes this design to operate in self-powered mode.

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32

So, Hyok, Dong Pan, Lixia Li, and Jianhua Zhao. "Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy." Nanotechnology 28, no. 13 (March 1, 2017): 135704. http://dx.doi.org/10.1088/1361-6528/aa6051.

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33

Hiruma, K., K. Tomioka, P. Mohan, L. Yang, J. Noborisaka, B. Hua, A. Hayashida, et al. "Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy." Journal of Nanotechnology 2012 (2012): 1–29. http://dx.doi.org/10.1155/2012/169284.

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The fabrication of GaAs- and InP-based III-V semiconductor nanowires with axial/radial heterostructures by using selective-area metal-organic vapor-phase epitaxy is reviewed. Nanowires, with a diameter of 50–300 nm and with a length of up to 10 μm, have been grown along the〈111〉B or〈111〉A crystallographic orientation from lithography-defined SiO2mask openings on a group III-V semiconductor substrate surface. An InGaAs quantum well (QW) in GaAs/InGaAs nanowires and a GaAs QW in GaAs/AlGaAs or GaAs/GaAsP nanowires have been fabricated for the axial heterostructures to investigate photoluminescence spectra from QWs with various thicknesses. Transmission electron microscopy combined with energy dispersive X-ray spectroscopy measurements have been used to analyze the crystal structure and the atomic composition profile for the nanowires. GaAs/AlGaAs, InP/InAs/InP, and GaAs/GaAsP core-shell structures have been found to be effective for the radial heterostructures to increase photoluminescence intensity and have enabled laser emissions from a single GaAs/GaAsP nanowire waveguide. The results have indicated that the core-shell structure is indispensable for surface passivation and practical use of nanowire optoelectronics devices.

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34

Arif, Omer, Valentina Zannier, Francesca Rossi, Daniele Ercolani, Fabio Beltram, and Lucia Sorba. "Self-Catalyzed InSb/InAs Quantum Dot Nanowires." Nanomaterials 11, no. 1 (January 13, 2021): 179. http://dx.doi.org/10.3390/nano11010179.

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The nanowire platform offers great opportunities for improving the quality and range of applications of semiconductor quantum wells and dots. Here, we present the self-catalyzed growth of InAs/InSb/InAs axial heterostructured nanowires with a single defect-free InSb quantum dot, on Si substrates, by chemical beam epitaxy. A systematic variation of the growth parameters for the InAs top segment has been investigated and the resulting nanowire morphology analyzed. We found that the growth temperature strongly influences the axial and radial growth rates of the top InAs segment. As a consequence, we can reduce the InAs shell thickness around the InSb quantum dot by increasing the InAs growth temperature. Moreover, we observed that both axial and radial growth rates are enhanced by the As line pressure as long as the In droplet on the top of the nanowire is preserved. Finally, the time evolution of the diameter along the entire length of the nanowires allowed us to understand that there are two In diffusion paths contributing to the radial InAs growth and that the interplay of these two mechanisms together with the total length of the nanowires determine the final shape of the nanowires. This study provides insights in understanding the growth mechanisms of self-catalyzed InSb/InAs quantum dot nanowires, and our results can be extended also to the growth of other self-catalyzed heterostructured nanowires, providing useful guidelines for the realization of quantum structures with the desired morphology and properties.

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35

Tatsuoka, Hirokazu, Wen Li, Er Chao Meng, Daisuke Ishikawa, and Kaito Nakane. "Syntheses and Structural Control of Silicide, Oxide and Metallic Nano-Structured Materials." Solid State Phenomena 213 (March 2014): 35–41. http://dx.doi.org/10.4028/www.scientific.net/ssp.213.35.

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The structural control and morphological modification of a series of silicide, oxide and Ag metal nanostructures have been further discussed with reviews of nanostructure syntheses, such as CrSi2 nanowire bundles dendrites, MoSi2 nanosheets, α-Fe2O3 nanowires nanobelts, CuO/Cu2O nanowire axial heterostructures, ZrO2/SiOx and CrSi2/SiOx core/shell nanowires. In addition, the syntheses of Ag three-dimensional dendrites, two-dimensional dendrites, two-dimensional fractal structures, particles and nanowires also were discussed. Moreover, the structural and morphological properties of the nanostructures were examined. The structural control and morphological modifications of the nanostructures have been successfully demonstrated by the appropriate thermal treatments with specific starting materials. A large volume of silicide nanowire bundles, large area of oxide nanowire arrays and large area Ag nanostructure coatings were successfully fabricated.

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36

Lari, L., T. Walther, M. H. Gass, L. Geelhaar, C. Chèze, H. Riechert, T. J. Bullough, and P. R. Chalker. "Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN–AlGaN axial heterostructure nanowires." Journal of Crystal Growth 327, no. 1 (July 2011): 27–34. http://dx.doi.org/10.1016/j.jcrysgro.2011.06.004.

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37

Anaya, J., A. Torres, J. Jiménez, A. Rodríguez, T. Rodríguez, and C. Ballesteros. "Raman Spectroscopy in Group IV Nanowires and Nanowire Axial Heterostructures." MRS Proceedings 1659 (2014): 143–48. http://dx.doi.org/10.1557/opl.2014.197.

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ABSTRACTThe control of the SiGe NW composition is fundamental for the fabrication of high quality heterostructures. Raman spectroscopy has been used to analyse the composition of SiGe alloys. We present a study of the Raman spectrum of SiGe nanowires and SiGe/Si heterostructures. The inhomogeneity of the Ge composition deduced from the Raman spectrum is explained by the existence of a Ge-rich outer shell and by the interaction of the NW with the electromagnetic field associated with the laser beam.

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38

Kryvyi, Serhii, Slawomir Kret, and Piotr Wojnar. "Precise strain mapping of nano-twinned axial ZnTe/CdTe hetero-nanowires by scanning nanobeam electron diffraction." Nanotechnology 33, no. 19 (February 15, 2022): 195704. http://dx.doi.org/10.1088/1361-6528/ac3fe3.

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Abstract The occurrence of strain is inevitable for the growth of lattice mismatched heterostructures. It affects greatly the mechanical, electrical and optical properties of nano-objects. It is also the case for nanowires which are characterized by a high surface to volume ratio. Thus, the knowledge of the strain distribution in nano-objects is critically important for their implementation into devices. This paper presents an experimental data for II-VI semiconductor system. Scanning nanobeam electron diffraction strain mapping technique for hetero-nanowires characterized by a large lattice mismatch (>6% in the case of CdTe/ZnTe) and containing segments with nano-twins has been described. The spatial resolution of about 2 nm is 10 times better than obtained in synchrotron nanobeam systems. The proposed approach allows us to overcome the difficulties related to nanowire thickness variations during the acquisition of the nano-beam electron diffraction data. In addition, the choice of optimal parameters used for the acquisition of nano-beam diffraction data for strain mapping has been discussed. The knowledge of the strain distribution enables, in our particular case, the improvement of the growth model of extremely strained axial nanowires synthetized by vapor-liquid solid growth mechanism. However, our method can be applied for the strain mapping in nanowire heterostructures grown by any other method.

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39

Li, Yuan, Wenwu Shi, John C. Dykes, and Nitin Chopra. "Growth of silicon nanowires-based heterostructures and their plasmonic modeling." MRS Proceedings 1547 (2013): 103–8. http://dx.doi.org/10.1557/opl.2013.542.

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ABSTRACTComplex nanoscale architectures based on gold nanoparticles (AuNPs) can result in spatially-resolved plasmonics. Herein, we demonstrate the growth of silicon nanowires (SiNWs), heterostructures of SiNWs decorated with AuNPs, and SiNWs decorated with graphene shells encapsulated gold nanoparticles (GNPs). The fabrication approach combined CVD growth of nanowires and graphene with direct nucleation of AuNPs. The plasmonic or optical properties of SiNWs and their complex heterostructures were simulated using discrete dipole approximation method. Extinction efficiency spectra peak for SiNW significantly red-shifted (from 512 nm to 597 nm or 674 nm) after decoration with AuNPs, irrespective of the incident wave vector. Finally, SiNW decorated with GNPs resulted in incident wave vector-dependent extinction efficiency peak. For this case, wave vector aligned with the nanowire axial direction showed a broad peak at ∼535 nm. However, significant scattering and no peak was observed when aligned in radial direction of the SiNWs. Such spatially-resolved and tunable plasmonic or optical properties of nanoscale heterostructures hold strong potential for optical sensor and devices.

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40

Neplokh, Vladimir, Vladimir Fedorov, Alexey Mozharov, Fedor Kochetkov, Konstantin Shugurov, Eduard Moiseev, Nuño Amador-Mendez, et al. "Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes." Nanomaterials 11, no. 10 (September 29, 2021): 2549. http://dx.doi.org/10.3390/nano11102549.

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We demonstrate flexible red light-emitting diodes based on axial GaPAs/GaP heterostructured nanowires embedded in polydimethylsiloxane membranes with transparent electrodes involving single-walled carbon nanotubes. The GaPAs/GaP axial nanowire arrays were grown by molecular beam epitaxy, encapsulated into a polydimethylsiloxane film, and then released from the growth substrate. The fabricated free-standing membrane of light-emitting diodes with contacts of single-walled carbon nanotube films has the main electroluminescence line at 670 nm. Membrane-based light-emitting diodes (LEDs) were compared with GaPAs/GaP NW array LED devices processed directly on Si growth substrate revealing similar electroluminescence properties. Demonstrated membrane-based red LEDs are opening an avenue for flexible full color inorganic devices.

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41

Arif, Omer, Valentina Zannier, Vladimir G. Dubrovskii, Igor V. Shtrom, Francesca Rossi, Fabio Beltram, and Lucia Sorba. "Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory." Nanomaterials 10, no. 3 (March 10, 2020): 494. http://dx.doi.org/10.3390/nano10030494.

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The growth mechanisms of self-catalyzed InAs/InSb axial nanowire heterostructures are thoroughly investigated as a function of the In and Sb line pressures and growth time. Some interesting phenomena are observed and analyzed. In particular, the presence of In droplet on top of InSb segment is shown to be essential for forming axial heterostructures in the self-catalyzed vapor-liquid-solid mode. Axial versus radial growth rates of InSb segment are investigated under different growth conditions and described within a dedicated model containing no free parameters. It is shown that widening of InSb segment with respect to InAs stem is controlled by the vapor-solid growth on the nanowire sidewalls rather than by the droplet swelling. The In droplet can even shrink smaller than the nanowire facet under Sb-rich conditions. These results shed more light on the growth mechanisms of self-catalyzed heterostructures and give clear route for engineering the morphology of InAs/InSb axial nanowire heterostructures for different applications.

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42

Mullane, E., H. Geaney, and K. M. Ryan. "Synthesis of silicon–germanium axial nanowire heterostructures in a solvent vapor growth system using indium and tin catalysts." Physical Chemistry Chemical Physics 17, no. 10 (2015): 6919–24. http://dx.doi.org/10.1039/c4cp04450a.

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The Si–Ge–Si_1−xGe_x nanowires (a,b) are grown directly on substrates placed in the vapour zone of a high boiling point solvent. DFSTEM image of In catalysed triple segmented Si–Ge–Si Ge nanowire is shown in (c) with arrow indicating the direction of the EDX line profile shown in (d).

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43

Samantaray, Debadarshini, Abinash Kumar, Priyadarshini Ghosh, Dipanwita Chatterjee, Pavithra Bellare, and N. Ravishankar. "Axial-Radial Heterostructures of Telluride Nanowire." Microscopy and Microanalysis 26, S2 (July 30, 2020): 2834–36. http://dx.doi.org/10.1017/s1431927620022941.

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Dayeh, Shadi A., and S. Tom Picraux. "Axial Ge/Si Nanowire Heterostructure Tunnel FETs." ECS Transactions 33, no. 6 (December 17, 2019): 373–78. http://dx.doi.org/10.1149/1.3487568.

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45

Dubrovskii, Vladimir G. "Compositional control of gold-catalyzed ternary nanowires and axial nanowire heterostructures based on IIIP1−xAsx." Journal of Crystal Growth 498 (September 2018): 179–85. http://dx.doi.org/10.1016/j.jcrysgro.2018.06.021.

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46

Zhou, Chen, Kun Zheng, Ping-Ping Chen, Syo Matsumura, Wei Lu, and Jin Zou. "Crystal-phase control of GaAs–GaAsSb core–shell/axial nanowire heterostructures by a two-step growth method." Journal of Materials Chemistry C 6, no. 25 (2018): 6726–32. http://dx.doi.org/10.1039/c8tc01529e.

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47

Dayeh, Shadi A., Robert M. Dickerson, and S. Thomas Picraux. "Axial bandgap engineering in germanium-silicon heterostructured nanowires." Applied Physics Letters 99, no. 11 (September 12, 2011): 113105. http://dx.doi.org/10.1063/1.3634050.

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Li, F., P. D. Nellist, C. Lang, and D. J. H. Cockayne. "Imaging and analysis of axial heterostructured silicon nanowires." Journal of Physics: Conference Series 241 (July 1, 2010): 012088. http://dx.doi.org/10.1088/1742-6596/241/1/012088.

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Oliva, Miriam, Guanhui Gao, Esperanza Luna, Lutz Geelhaar, and Ryan B. Lewis. "Axial GaAs/Ga(As, Bi) nanowire heterostructures." Nanotechnology 30, no. 42 (August 2, 2019): 425601. http://dx.doi.org/10.1088/1361-6528/ab3209.

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50

Dubrovskii, V. G., A. A. Koryakin, and N. V. Sibirev. "Understanding the composition of ternary III-V nanowires and axial nanowire heterostructures in nucleation-limited regime." Materials & Design 132 (October 2017): 400–408. http://dx.doi.org/10.1016/j.matdes.2017.07.012.

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