Relevant bibliographies by topics / Axial heterostructure nanowires

Academic literature on the topic 'Axial heterostructure nanowires'

Author: Grafiati
Published: 10 December 2022
Last updated: 28 January 2023

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Journal articles on the topic "Axial heterostructure nanowires"

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Лещенко, Е. Д., and В. Г. Дубровский. "Моделирование профиля состава осевой гетероструктуры InSb/GaInSb/InSb в нитевидных нанокристаллах." Письма в журнал технической физики 48, no. 19 (2022): 20. http://dx.doi.org/10.21883/pjtf.2022.19.53590.19339.

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The formation of the double InSb/GaInSb/InSb heterostructure in self-catalyzed and Au-catalyzed nanowires is studied theoretically. We calculate the compositional profiles across the axial heterostructures and study the influence of different growth parameters on the heterointerface properties, including temperature, Sb and Au concentrations.
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Wang, Yuda, Parveen Kumar, Leigh Morris Smith, Howard E. Jackson, Jan M. Yarrison-Rice, Craig Pryor, Jung-Hyun Kang, Qiang Gao, Hark Hoe Tan, and Chennupati Jagadish. "Tuning Band Energies in a Combined Axial and Radial GaAs/GaP Heterostructure." MRS Proceedings 1659 (2014): 139–42. http://dx.doi.org/10.1557/opl.2014.355.

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ABSTRACTWe use Raman scattering to study the spatially-resolved strain and stress in a complex zinc blende GaAs/GaP heterostructured nanowire which contains both axial and radial interfaces. The nanowires are grown by metal-organic chemical vapor deposition in the [111] direction with Au nano particles as catalysts, High spatial resolution Raman scans along the nanowires show the GaAs/GaP interface is clearly identifiable. We interpret the phonon energy shifts in each material as one approaches the interface.
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Anandan, Deepak, Che-Wei Hsu, and Edward Yi Chang. "Growth of III-V Antimonide Heterostructure Nanowires on Silicon Substrate for Esaki Tunnel Diode." Materials Science Forum 1055 (March 4, 2022): 1–6. http://dx.doi.org/10.4028/p-y19917.

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Integration of low bandgap antimonide based nanowires on Si substrate has been attracting huge attention for opto-electronic applications. In this work we demonstrated InAs/InSb and InAs/GaSb heterostructure nanowires on Si substrate by metal organic chemical vapor deposition. We grew high quality axial InSb heterostructure segment on InAs stem by self-catalyzed growth technique, which paves a way to tune the crystal structure of InSb. In case of InAs-GaSb core-shell architecture, GaSb crystal quality highly depends on InAs core. We successfully demonstrated basic electrical characteristics of InAs-GaSb core-shell nanowire which exhibits negative differential resistance at 0.8 V and peak-to-valley current ratio of 3.84.
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Zhang, Guoqiang, Masato Takiguchi, Kouta Tateno, Takehiko Tawara, Masaya Notomi, and Hideki Gotoh. "Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature." Science Advances 5, no. 2 (February 2019): eaat8896. http://dx.doi.org/10.1126/sciadv.aat8896.

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Telecom-band single nanowire lasers made by the bottom-up vapor-liquid-solid approach, which is technologically important in optical fiber communication systems, still remain challenging. Here, we report telecom-band single nanowire lasers operating at room temperature based on multi-quantum-disk InP/InAs heterostructure nanowires. Transmission electron microscopy studies show that highly uniform multi-quantum-disk InP/InAs structure is grown in InP nanowires by self-catalyzed vapor-liquid-solid mode using indium particle catalysts. Optical excitation of individual nanowires yielded lasing in telecom band operating at room temperature. We show the tunability of laser wavelength range in telecom band by modulating the thickness of single InAs quantum disks through quantum confinement along the axial direction. The demonstration of telecom-band single nanowire lasers operating at room temperature is a major step forward in providing practical integrable coherent light sources for optoelectronics and data communication.
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Shwartz, Nataliya L., Alla G. Nastovjak, and Igor G. Neizvestny. "Peculiarities of axial and radial Ge–Si heterojunction formation in nanowires: Monte Carlo simulation." Pure and Applied Chemistry 84, no. 12 (May 27, 2012): 2619–28. http://dx.doi.org/10.1351/pac-con-11-12-05.

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The process of axial and radial Si–Ge heterostructure formation during nanowire growth by vapor–liquid–solid (VLS) mechanism was studied using Monte Carlo (MC) simulation. It was demonstrated that radial growth can be stimulated by adding chemical species that decrease the activation energy of precursor dissociation or the solubility of semiconductor material in catalyst drop. Reducing the Si adatom diffusion length also leads to Si shell formation around the Ge core. The influence of growth conditions on the composition and abruptness of axial Ge–Si heterostructures was analyzed. The composition of the GexSi1–x axial heterojunction (HJ) was found to be dependent on the flux ratio, the duration of Si and Ge deposition, and the catalyst drop diameter. Maximal Ge concentration in the HJ is dependent on Ge deposition time owing to gradual changing of catalyst drop composition after switching Ge and Si fluxes. The dependence of junction abruptness on the nanowire diameter was revealed: in the adsorption-induced growth mode, the abruptness decreased with diameter, and in the diffusion-induced mode it increased. This implies that abrupt Ge–Si HJ in nanowires with small diameter can be obtained only in the chemical vapor deposition (CVD) process with negligible diffusion component of growth.
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Johar, Muhammad Ali, Hyun-Gyu Song, Aadil Waseem, Jin-Ho Kang, Jun-Seok Ha, Yong-Hoon Cho, and Sang-Wan Ryu. "Ultrafast carrier dynamics of conformally grown semi-polar (112̄2) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires." Nanoscale 11, no. 22 (2019): 10932–43. http://dx.doi.org/10.1039/c9nr02823d.

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Wen, C. Y., M. C. Reuter, J. Bruley, J. Tersoff, S. Kodambaka, E. A. Stach, and F. M. Ross. "Formation of Compositionally Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires." Science 326, no. 5957 (November 26, 2009): 1247–50. http://dx.doi.org/10.1126/science.1178606.

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We have formed compositionally abrupt interfaces in silicon-germanium (Si-Ge) and Si-SiGe heterostructure nanowires by using solid aluminum-gold alloy catalyst particles rather than the conventional liquid semiconductor–metal eutectic droplets. We demonstrated single interfaces that are defect-free and close to atomically abrupt, as well as quantum dots (i.e., Ge layers tens of atomic planes thick) embedded within Si wires. Real-time imaging of growth kinetics reveals that a low solubility of Si and Ge in the solid particle accounts for the interfacial abruptness. Solid catalysts that can form functional group IV nanowire-based structures may yield an extended range of electronic applications.
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Cornet, D. M., and R. R. LaPierre. "InGaAs/InP core–shell and axial heterostructure nanowires." Nanotechnology 18, no. 38 (August 31, 2007): 385305. http://dx.doi.org/10.1088/0957-4484/18/38/385305.

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Thuong, Nguyen Thi, Nguyen Viet Minh, Nguyen Ngoc Tuan, and Vu Ngoc Tuoc. "Density Functional Based Tight Binding Study on Wurzite Core-Shell Nanowires Heterostructures Zno/Zns." Communications in Physics 21, no. 3 (September 19, 2011): 225. http://dx.doi.org/10.15625/0868-3166/21/3/172.

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We present a Density Functional Based Tight Binding study on the crystallography and electronic structures of various II-VI wurtzite core-shell, core-multi-shell ZnO/ZnS unsaturated nanowires (NW) of circular and hexagonal cross sections and examine the dependence of interface stress and formation energy on nanowire lateral size with diameter range from 20$\mathring{A}$ upto 40$\mathring{A}$. Young's modulus of the wires along the axial growth direction have been estimated. Also the tensile tests have been applied for various wires to show the diameter dependences of their mechanical properties. The electronic properties of these heterostructure nanowires (e.g., Projected Band Structure, Density of State, charge transfer via Mulliken population analysis) also exhibit diameter-dependent behavior.
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Sheehan, Martin, Quentin M. Ramasse, Hugh Geaney, and Kevin M. Ryan. "Linear heterostructured Ni2Si/Si nanowires with abrupt interfaces synthesised in solution." Nanoscale 10, no. 40 (2018): 19182–87. http://dx.doi.org/10.1039/c8nr05388j.

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Dissertations / Theses on the topic "Axial heterostructure nanowires"

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Periwal, Priyanka. "VLS growth and characterization of axial Si-SiGe heterostructured nanowire for tunnel field effect transistors." Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENT045.

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L'augmentation des performances des circuits intégrés s'est effectué durant les trentes dernières années par la miniaturisation du composant clé à savoir le transistor MOSFET. Cette augmentation de la densité d'intégration se heurte aujourd'hui à plusieurs verrous, notamment celui de la puissance consommée qui devient colossale. Il devient alors nécessaire de travailler sur de nouveaux composants, les transistors à effet tunnel, où les porteurs sont injectés par effet tunnel bande à bande permettant de limiter considérablement la puissance consommée en statique. Les nanofils semiconducteurs sont de bons candidats pour être intégrés comme canaux de ces nouveaux composants de part la possibilité de moduler leur gap et leur conductivité au cours de la croissance. Dans ce contexte, cette thèse traite de la croissance d'hétérostructures axiales Si/Si1-xGex élaborés par croissance VLS par RP-CVD. Tout d'abord, nous identifions les conditions de croissance pour réaliser des interface Si/Si1-xGex et Si1-xGex/Si abruptes. Les deux heterointerfaces sont toujours asymétrique quelle que soit la concentration en Ge ou le diamètre des nanofils ou des conditions de croissance. Deuxièmement, nous étudions les problématiques impliquées par l'ajout d'atomes dopants. Nous discutons de l'influence des paramètres de croissance (le rapport flux de gaz (Si / Ge), et la pression partielle de dopants) sur la morphologie des nanofils et la concentration de porteurs. Grâce à cette étude, nous avons été capable de faire croitre des hétérojonctions P-I-N. Troisièmement, nous présentons une technique basée sur la microscopie à sonde locale pour caractériser les hétérojonctions
After more than 30 years of successful scaling of MOSFET for increasing the performance and packing density, several limitations to further performance enhancements are now arising, power dissipation is one of the most important one. As scaling continues, there is a need to develop alternative devices with subthreshold slope below 60 mV/decade. In particular, tunnel field effect transistors, where the carriers are injected by quantum band to band tunneling mechanism can be promising candidate for low-power design. But, such devices require the implementation of peculiar architectures like axial heterostructured nanowires with abrupt interface. Using Au catalyzed vapor-liquid-solid synthesis of nanowires, reservoir effect restrains the formation of sharp junctions. In this context, this thesis addresses the growth of axial Si and Si1-xGex heterostructured nanowire with controlled interfacial abruptness and controlled doping using Au catalyzed VLS growth by RP-CVD. Firstly, we identify the growth conditions to realize sharp Si/Si1-xGex and Si1-xGex/Si interfacial abruptness. The two heterointerfaces are always asymmetric irrespective of the Ge concentration or nanowire diameter or growth conditions. Secondly, we study the problematics involved by the addition of dopant atoms and focus on the different approaches to realize taper free NWs. We discuss the influence of growth parameters (gas fluxes (Si or Ge), dopant ratio and pressure) on NW morphology and carrier concentration. With our growth process, we could successfully grow p-I, n-I, p-n, p-i-n type junctions in NWs. Thirdly, we present scanning probe microscopy to be a potential tool to delineate doped and hetero junctions in these as-grown nanowires. Finally, we will integrate the p-i-n junction in the NW in omega gate configuration
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Tauchnitz, Tina [Verfasser], Gianaurelio [Gutachter] Cuniberti, Manfred [Gutachter] Helm, and Henning [Gutachter] Riechert. "Novel Methods for Controlled Self-Catalyzed Growth of GaAs Nanowires and GaAs/AlxGa1-xAs Axial Nanowire Heterostructures on Si Substrates by Molecular Beam Epitaxy / Tina Tauchnitz ; Gutachter: Gianaurelio Cuniberti, Manfred Helm, Henning Riechert." Dresden : Helmholtz-Zentrum Dresden-Rossendorf, 2020. http://d-nb.info/1227833652/34.

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Wolfsteller, Andreas [Verfasser], Hartmut S. [Akademischer Betreuer] Leipner, i. Morral Anna [Akademischer Betreuer] Fontcuberta, and Margit [Akademischer Betreuer] Zacharias. "Comparison of the top-down and bottom-up approach to fabricate axial nanowire-based Silicon, Germanium heterostructures / Andreas Wolfsteller. Betreuer: Hartmut S. Leipner ; Anna Fontcuberta i Morral ; Margit Zacharias." Halle, Saale : Universitäts- und Landesbibliothek Sachsen-Anhalt, 2010. http://d-nb.info/1024976106/34.

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"Nanowire Synthesis and Characterization: Erbium Chloride Silicate and Two Segment CdS-CdSe Nanowires and Belts." Master's thesis, 2012. http://hdl.handle.net/2286/R.I.14579.

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abstract: In this work, I worked on the synthesis and characterization of nanowires and belts, grown using different materials, in Chemical Vapor Deposition (CVD) system with catalytic growth method. Through this thesis, I utilized the Photoluminescence (PL), Secondary Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS) and X-ray diffraction (XRD) analyses to find out the properties of Erbium Chloride Silicate (ECS) and two segment CdS-CdSe samples. In the first part of my research, growth of very new material, Erbium Chloride Silicate (ECS), in form of core/shell Si/ECS and pure ECS nanowires, was demonstrated. This new material has very fascinating properties for new Si based photonic devices. The Erbium density in those nanowires is which is very high value compared to the other Erbium doped materials. It was shown that the luminescence peaks of ECS nanowires are very sharp and stronger than their counterparts. Furthermore, both PL and XRD peaks get sharper and stronger as growth temperature increases and this shows that crystalline quality of ECS nanowires gets better with higher temperature. In the second part, I did a very detail research for growing two segment axial nanowires or radial belts and report that the structure type mostly depends on the growth temperature. Since our final step is to create white light LEDs using single axial nanowires which have three different regions grown with distinct materials and give red, green and blue colors simultaneously, we worked on growing CdS-CdSe nanowires or belts for the first step of our aim. Those products were successfully grown and they gave two luminescence peaks with maximum 160 nm wavelength separation depending on the growth conditions. It was observed that products become more likely belt once the substrate temperature increases. Also, dominance between VLS and VS is very critical to determine the shape of the products and the substitution of CdS by CdSe is very effective; hence, CdSe growth time should be chosen accordingly. However, it was shown two segmented products can be synthesized by picking the right conditions and with very careful analyses. We also demonstrated that simultaneous two colors lasing from a single segmented belt structures is possible with strong enough-pumping-power.
Dissertation/Thesis
M.S. Electrical Engineering 2012
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Tauchnitz, Tina. "Novel Methods for Controlled Self-Catalyzed Growth of GaAs Nanowires and GaAs/AlxGa1-xAs Axial Nanowire Heterostructures on Si Substrates by Molecular Beam Epitaxy." 2019. https://tud.qucosa.de/id/qucosa%3A38708.

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GaAs-based nanowires are attractive building blocks for the development of future (opto)electronic devices owing to their excellent intrinsic material properties, such as the direct band gap and high electron mobility. A pre-requisite for the implementation of novel functionalities on a single Si chip is the monolithic integration of the nanowires on the well-established Si complementary-metal-oxide-semiconductor (CMOS) platform with precise control of the nanowire growth process. The self-catalyzed (Ga-assisted) growth of GaAs nanowires on Si(111) substrates using molecular beam epitaxy has offered the possibility to obtain vertical nanowires with predominant zinc blende structure, while potential contamination by external catalysts like Au is eliminated. Although the growth mechanism is fairly well understood, control of the nucleation stage, the nanowire number density and the crystal structure has been proven rather challenging. Moreover, conventional growth processes are typically performed at relatively high substrate temperatures in the range of 560-630 °C, which limit their application to the industrial Si platform. This thesis provides two original methods in order to tackle the aforementioned challenges in the conventional growth processes. In the first part of this thesis, a simple surface modification procedure (SMP) for the in situ preparation of native-SiOx/Si(111) substrates has been developed. Using a pre-growth treatment of the substrates with Ga droplets and two annealing cycles, the SMP enables highly synchronized nucleation of all nanowires on their substrate and thus, the growth of exceptionally uniform GaAs nanowire ensembles with sub-Poissonian length distributions. Moreover, the nanowire number density can be tuned within three orders of magnitude and independent of the nanowire dimensions without prior ex situ patterning of the substrate. This work delivers a fundamental understanding of the nucleation kinetics of Ga droplets on native-SiOx and their interaction with SiOx, and confirms theoretical predictions about the so-called nucleation antibunching, the temporal anti-correlation of consecutive nucleation events. In the second part of this thesis, an alternative method called droplet-confined alternate-pulsed epitaxy (DCAPE) for the self-catalyzed growth of GaAs nanowires and GaAs/AlxGa1-xAs axial nanowire heterostructures has been developed. DCAPE enables nanowire growth at unconventional, low temperatures in the range of 450-550 °C and is compatible with the standard Si-CMOS platform. The novel growth approach allows one to precisely control the crystal structure of the nanowires and, thus, to produce defect-free pure zinc blende GaAs-based nanowires. The strength of DCAPE is further highlighted by the controlled growth of GaAs/AlxGa1-xAs axial quantum well nanowires with abrupt interfaces and tunable thickness and Al-content of the AlxGa1-xAs sections. The GaAs/AlxGa1-xAs axial nanowire heterostructures are interesting for applications as single photon emitters with tunable emission wavelength, when they are overgrown with thick lattice-mismatched InxAl1-xAs layers in a core-shell fashion. All results presented in this thesis contribute to paving the way for a successful monolithic integration of highly uniform GaAs-based nanowires with controlled number density, dimensions and crystal structure on the mature Si platform.
GaAs-basierte Nanodrähte sind attraktive Bausteine für die Entwicklung von zukünftigen (opto)elektronischen Bauelementen dank ihrer exzellenten intrinsischen Materialeigenschaften wie zum Beispiel die direkte Bandlücke und die hohe Elektronenbeweglichkeit. Eine Voraussetzung für die Realisierung neuer Funktionalitäten auf einem einzelnen Si Chip ist die monolithische Integration der Nanodrähte auf der etablierten Si-Metall-Oxid-Halbleiter-Plattform (CMOS) mit präziser Kontrolle des Wachstumsprozesses der Nanodrähte. Das selbstkatalytische (Ga-unterstützte) Wachstum von GaAs Nanodrähten auf Si(111)-Substrat mittels Molekularstrahlepitaxie bietet die Möglichkeit vertikale Nanodrähte mit vorwiegend Zinkblende-Struktur herzustellen, während die potentielle Verunreinigung der Nanodrähte und des Substrats durch externe Katalysatoren wie Au vermieden wird. Obwohl der Wachstumsmechanismus gut verstanden ist, erweist sich die Kontrolle der Nukleationsphase, Anzahldichte und Kristallstruktur der Nanodrähte als sehr schwierig. Darüber hinaus sind relativ hohe Temperaturen im Bereich von 560-630 °C in konventionellen Wachstumsprozessen notwendig, die deren Anwendung auf der industriellen Si Plattform begrenzen. Die vorliegende Arbeit liefert zwei originelle Methoden um die bestehenden Herausforderungen in konventionellen Wachstumsprozessen zu bewältigen. Im ersten Teil dieser Arbeit wurde eine einfache Prozedur, bezeichnet als surface modification procedure (SMP), für die in situ Vorbehandlung von nativem-SiOx/Si(111)-Substrat entwickelt. Die Substratvorbehandlung mit Ga-Tröpfchen und zwei Hochtemperaturschritten vor dem Wachstumsprozess ermöglicht eine synchronisierte Nukleation aller Nanodrähte auf ihrem Substrat und folglich das Wachstum von sehr gleichförmigen GaAs Nanodraht-Ensembles mit einer sub-Poisson Verteilung der Nanodrahtlängen. Des Weiteren kann die Anzahldichte der Nanodrähte unabhängig von deren Abmessungen und ohne ex situ Vorstrukturierung des Substrats über drei Größenordnungen eingestellt werden. Diese Arbeit liefert außerdem ein grundlegendes Verständnis zur Nukleationskinetik von Ga-Tröpfchen auf nativem-SiOx und deren Wechselwirkung mit SiOx und bestätigt theoretische Voraussagen zum sogenannten Nukleations-Antibunching, dem Auftreten einer zeitlichen Anti-Korrelation aufeinanderfolgender Nukleationsereignisse. Im zweiten Teil dieser Arbeit wurde eine alternative Methode, bezeichnet als droplet-confined alternate-pulsed epitaxy (DCAPE), für das selbstkatalytische Wachstum von GaAs Nanodrähten und GaAs/AlxGa1-xAs axialen Nanodraht-Heterostrukturen entwickelt. DCAPE ermöglicht das Nanodrahtwachstum bei unkonventionell geringeren Temperaturen im Bereich von 450-550 °C und ist vollständig kompatibel mit der Standard-Si-CMOS-Plattform. Der neue Wachstumsansatz erlaubt eine präzise Kontrolle der Kristallstruktur der Nanodrähte und folglich das Wachstum von defektfreien Nanodrähten mit phasenreiner Zinkblende-Struktur. Die Stärke der DCAPE Methode wird des Weiteren durch das kontrollierte Wachstum von GaAs/AlxGa1-xAs axialen Quantentopf-Nanodrähten mit abrupten Grenzflächen und einstellbarer Dicke und Al-Anteil der AlxGa1-xAs-Segmente aufgezeigt. Die GaAs/AlxGa1-xAs axialen Nanodraht-Heterostrukturen sind interessant für den Einsatz als Einzelphotonen-Emitter mit einstellbarer Emissionswellenlänge, wenn diese mit gitterfehlangepassten InxAl1-xAs-Schichten in einer Kern-Hülle-Konfiguration überwachsen werden. Alle Ergebnisse dieser Arbeit tragen dazu bei, den Weg für eine erfolgreiche monolithische Integration von sehr gleichförmigen GaAs-basierten Nanodrähten mit kontrollierbarer Anzahldichte, Abmessungen und Kristallstruktur auf der industriell etablierten Si-Plattform zu ebnen.
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Tauchnitz, Tina. "Novel Methods for Controlled Self-Catalyzed Growth of GaAs Nanowires and GaAs/AlxGa1-xAs Axial Nanowire Heterostructures on Si Substrates by Molecular Beam Epitaxy." 2020. https://hzdr.qucosa.de/id/qucosa%3A38028.

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Wu, Yen-Ting, and 吳彥廷. "Growth of Nickel Silicide/Platinum Silicide Axial Nanowire Heterostructures through Solid-State Reactions." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/15392745652361894255.

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碩士
國立交通大學
材料科學與工程學系所
104
Transition metal silicide nanowires (NWs) have attracted increasing attention as they possess both advantages of silicon nanowires and transition metals. Over the past years, there are only reports with efforts on one silicide in single silicon nanowire. However, the research about two or more silicides in single silicon is still rare. In this thesis, we successfully fabricated θ-Ni2Si/Si/β-Pt2Si, θ-Ni2Si/β-Pt2Si and Ni,Pt,Si ternary phase axial nanowire heterostructures through solid-state reactions at 650 ℃. The growth mechanism and diffusion behavior of silicide nanowire heterostructures were studied by in-situ transmission electron microscope. Spherical aberration corrected scanning transmission electron microscope was used to analyze the phase structure and composition of silicide nanowire heterostructures. Moreover, electrical and photon sensing properties for the silicide nanowire heterostructures were investigated. We found that Ni,Pt,Si ternary phase nanowire heterostructures have excellent infrared light sensing property which is absent in bulk Ni2Si or Pt2Si. The above results would benefit the further understanding in heterostructured nano materials.
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Book chapters on the topic "Axial heterostructure nanowires"

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Gott, James A. "Interfaces in Nanowire Axial Heterostructures." In Springer Theses, 123–40. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-94062-1_5.

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Paulsamy, Chinnamuthu, Pheiroijam Pooja, and Heigrujam Manas Singh. "Synthesis of Nanowire Using Glancing Angle Deposition and Their Applications." In Nanowires - Recent Progress [Working Title]. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.94012.

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Nanowires are highly attractive for advanced nanoelectronics and nanoscience applications, due to its novel properties such as increased surface area, large aspect ratio, and increased surface scattering of electrons and phonons. The design and fabrication of nanowires array provide a great platform to overcome the challenges/limitation of its counter partner. This chapter focuses on the synthesis of metal oxide nanowire and axial heterostructure nanowire array using the Glancing angle deposition (GLAD) technique. The structural, optical and electrical properties are studied. This GLAD technique offers control over one-dimensional (1D) nanostructure growth with self-alignment capability. It is also reviewed in an effort to cover the various application in this area of optoelectronic devices and wettability applications that had been synthesized using GLAD.
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Conference papers on the topic "Axial heterostructure nanowires"

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Koryakin, A. A., and V. G. Dubrovskii. "Axial heterostructure formation in GaInP nanowires." In 2020 International Conference Laser Optics (ICLO). IEEE, 2020. http://dx.doi.org/10.1109/iclo48556.2020.9285852.

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Zhou, Kun, Xia Zhang, Xin Yan, Xiaolong Lv, Junshuai Li, Xiaomin Ren, and Yongqing Huang. "VLS growth of GaAs/InGaAs/GaAs axial double-heterostructure nanowires." In International Conference on Optical Instruments and Technology (OIT2011), edited by Larry Weber, Hoi S. Kwok, Yanbing Hou, Lianxiang Yang, Chongxiu Yu, Fengzhou Fang, Albert Weckenmann, Ji Zhao, Peter Zeppenfeld, and Jack Luo. SPIE, 2011. http://dx.doi.org/10.1117/12.921312.

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Geng, Hui, Xin Yan, Xia Zhang, Junshuai Li, Yongqing Huang, and Xiaomin Ren. "Critical Dimensions for Axial Double Heterostructure Nanowires Using Finite-Element Method." In Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2012. http://dx.doi.org/10.1364/acp.2012.af4a.7.

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Geng, Hui, Xin Yan, Xia Zhang, Yongqing Huang, and Xiaomin Ren. "Critical Dimensions for Axial Double Heterostructure Nanowires Using Finite-Element Method." In Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2012. http://dx.doi.org/10.1364/acpc.2012.af4a.7.

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Lecestre, A., N. Mallet, M. Martin, T. Baron, and G. Larrieu. "Fabrication of GaAs nanowires and GaAs-Si axial heterostructure nanowires on Si (100) substrate for new applications." In 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC). IEEE, 2016. http://dx.doi.org/10.1109/nmdc.2016.7777150.

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Lv, Xiaolong. "Growth and characterization of GaAs/InxGa1-xAs/GaAs axial heterostructure nanowires by MOCVD." In Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2012. http://dx.doi.org/10.1364/acp.2012.af4b.41.

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Lv, Xiaolong, Xia Zhang, Xin Yan, Jiangong Cui, Junshuai Li, Yongqing Huang, and Xiaomin Ren. "Growth and characterization of GaAs/InxGa1-xAs/GaAs axial heterostructure nanowires by MOCVD." In Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2012. http://dx.doi.org/10.1364/acpc.2012.af4b.41.

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Joyce, H. J., Y. Kim, Q. Gao, H. H. Tan, and C. Jagadish. "Structural and Optical Properties of Axial and Radial Heterostructure Ill-V Nanowires Grown by Metalorganic Chemical Vapour Deposition." In 2006 Sixth IEEE Conference on Nanotechnology. IEEE, 2006. http://dx.doi.org/10.1109/nano.2006.247753.

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Cao, B. Q., X. L. Hu, H. M. Wei, and H. Y. Xu. "Radial and axial nanowire heterostructures grown with ZnO nanowires as templates." In 2010 IEEE Region 10 Conference (TENCON 2010). IEEE, 2010. http://dx.doi.org/10.1109/tencon.2010.5686470.

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Koryakin, A. A., V. Zannier, F. Rossi, D. Ercolani, S. Battiato, L. Sorba, and V. G. Dubrovskii. "Modeling the comosition of ternary III-V nanowires and axial nanowire heterostructures." In 2018 International Conference Laser Optics (ICLO). IEEE, 2018. http://dx.doi.org/10.1109/lo.2018.8435585.

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