Relevant bibliographies by topics / Atomically thin

Academic literature on the topic 'Atomically thin'

Author: Grafiati
Published: 10 December 2022
Last updated: 28 January 2023

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Journal articles on the topic "Atomically thin"

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Horiuchi, Noriaki. "Atomically thin materials." Nature Photonics 12, no. 11 (October 26, 2018): 641. http://dx.doi.org/10.1038/s41566-018-0294-1.

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Kim, Cheol-Joo, A. Sánchez-Castillo, Zack Ziegler, Yui Ogawa, Cecilia Noguez, and Jiwoong Park. "Chiral atomically thin films." Nature Nanotechnology 11, no. 6 (February 22, 2016): 520–24. http://dx.doi.org/10.1038/nnano.2016.3.

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Kubie, Lenore, Marissa S. Martinez, Elisa M. Miller, Lance M. Wheeler, and Matthew C. Beard. "Atomically Thin Metal Sulfides." Journal of the American Chemical Society 141, no. 30 (July 5, 2019): 12121–27. http://dx.doi.org/10.1021/jacs.9b05807.

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Liu, Dong, and Hao Chen. "Atomically thin planar metasurfaces." Journal of Photonics for Energy 9, no. 03 (April 8, 2019): 1. http://dx.doi.org/10.1117/1.jpe.9.032716.

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Kim, Seong Keun. "Atomically thin indium oxide transistors." Nature Electronics 5, no. 3 (March 2022): 129–30. http://dx.doi.org/10.1038/s41928-022-00734-w.

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Shi, Su-Fei, and Feng Wang. "Atomically thin p–n junctions." Nature Nanotechnology 9, no. 9 (September 2014): 664–65. http://dx.doi.org/10.1038/nnano.2014.186.

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García de Abajo, F. Javier, and Alejandro Manjavacas. "Plasmonics in atomically thin materials." Faraday Discussions 178 (2015): 87–107. http://dx.doi.org/10.1039/c4fd00216d.

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The observation and electrical manipulation of infrared surface plasmons in graphene have triggered a search for similar photonic capabilities in other atomically thin materials that enable electrical modulation of light at visible and near-infrared frequencies, as well as strong interaction with optical quantum emitters. Here, we present a simple analytical description of the optical response of such kinds of structures, which we exploit to investigate their application to light modulation and quantum optics. Specifically, we show that plasmons in one-atom-thick noble-metal layers can be used both to produce complete tunable optical absorption and to reach the strong-coupling regime in the interaction with neighboring quantum emitters. Our methods are applicable to any plasmon-supporting thin materials, and in particular, we provide parameters that allow us to readily calculate the response of silver, gold, and graphene islands. Besides their interest for nanoscale electro-optics, the present study emphasizes the great potential of these structures for the design of quantum nanophotonics devices.
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Li, Lu Hua, Ling Li, Xiujuan J. Dai, and Ying Chen. "Atomically thin boron nitride nanodisks." Materials Letters 106 (September 2013): 409–12. http://dx.doi.org/10.1016/j.matlet.2013.05.090.

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Zhao, Huan, Zhipeng Dong, He Tian, Don DiMarzi, Myung-Geun Han, Lihua Zhang, Xiaodong Yan, et al. "Atomically Thin Femtojoule Memristive Device." Advanced Materials 29, no. 47 (October 25, 2017): 1703232. http://dx.doi.org/10.1002/adma.201703232.

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Lynch, Jason, Ludovica Guarneri, Deep Jariwala, and Jorik van de Groep. "Exciton resonances for atomically-thin optics." Journal of Applied Physics 132, no. 9 (September 7, 2022): 091102. http://dx.doi.org/10.1063/5.0101317.

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Metasurfaces enable flat optical elements by leveraging optical resonances in metallic or dielectric nanoparticles to obtain accurate control over the amplitude and phase of the scattered light. While highly efficient, these resonances are static and difficult to tune actively. Exciton resonances in atomically thin 2D semiconductors provide a novel and uniquely strong resonant light–matter interaction, which presents a new opportunity for optical metasurfaces. Their resonant properties are intrinsic to the band structure of the material, do not rely on nanoscale patterns, and are highly tunable using external stimuli. In this tutorial, we present the role that exciton resonances can play for atomically thin optics. We describe the essentials of metasurface physics and provide background on exciton physics and a comprehensive overview of excitonic materials. Excitons demonstrate to provide new degrees of freedom and enhanced light–matter interactions in hybrid metasurfaces through coupling with metallic and dielectric metasurfaces. Using the high sensitivity of excitons to the medium's electron density, the first demonstrations of electrically tunable nanophotonic devices and atomically thin optical elements are also discussed. The future of excitons in metasurfaces looks promising, while the main challenge lies in large-area growth and precise integration of high-quality materials.
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Dissertations / Theses on the topic "Atomically thin"

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Bandurin, Denis. "Electron transport in atomically thin crystals." Thesis, University of Manchester, 2017. https://www.research.manchester.ac.uk/portal/en/theses/electron-transport-in-atomically-thin-crystals(e184d9d8-ad44-41e0-8be9-bd381d6a21d6).html.

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This work is dedicated to electron transport in atomically thin crystals. We explore hydrodynamic effects in the electron liquid of graphene and perform a comprehensive study of electronic and optical properties of a novel 2D semiconductor - indium selenide(InSe). Graphene hosts a high quality electron system with weak phonon coupling such that electron-electron scattering can be the dominant process responsible for the establishment of local equilibrium of the electronic system above liquid nitrogen temperatures. Under these conditions, charge carriers are expected to behave as a viscous fluid with a hydrodynamic behaviour similar to classical gases or liquids. In this thesis, we aimed to reveal this hydrodynamic behaviour of the electron fluid by studying transport properties of high-quality graphene devices. To amplify the hydrodynamic effects, we used a special measurement geometry in which the current was injected into the graphene channel and the voltage was measured at the contact nearest to the injector. In this geometry we detected a negative signal which is developed as a result of the viscous drag between adjacent fluid layers, accompanied by the formation of current vortices. The magnitude of the signal allowed us to perform the first measurement of electron viscosity. In order to understand how an electron liquid enters the hydrodynamic regime we studied electron transport in graphene point contacts. We observed a drop in the point contact resistance upon increasing temperature. This drop was attributed to the interaction-induced lubrication of the point contact boundaries that was found to be strong enough to prevent momentum relaxation of charge carriers. The viscosity of the electron fluid was measured over a wide range of temperatures and at different carrier densities. Experimental data was found to be in good agreement with many-body calculations. In this work we also studied transport properties of two-dimensional InSe. We observed high electron mobility transport, quantum oscillations and a fully developed quantum Hall effect. In optical studies, we revealed that due to the crystal symmetry a monolayer InSe features suppressed recombination of electron-hole pairs.
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Pearce, Alexander James. "Electromechanical properties of atomically thin materials." Thesis, University of Exeter, 2014. http://hdl.handle.net/10871/15294.

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We discuss the effect of elastic deformations on the electronic properties of atomically thin materials, with a focus on bilayer graphene and MoS2 membranes. In these materials distortions of the lattice translate into fictitious gauge fields in the electronic Dirac Hamiltonian that are explicitly derived here for arbitrary elastic deformations, including in-plane as well as flexural (out-of-plane) distortions. We consider bilayer graphene, where a constant fictitious gauge field causes a dramatic reconstruction of the low energy trigonally warped electronic spectrum inducing topological transitions in the Fermi surface. We then present results of ballistic transport in trigonally warped bilayer graphene with and without strain, with particular focus on noise and the Fano factor. With the inclusion of trigonal warping the Fano factor at the Dirac point is still F = 1/3, but the range of energies which show pseudo diffusive transport increases by orders of magnitude compared to the results stemming out of a parabolic spectrum and the applied strain acts to increase this energy range further. We also consider arbitrary deformations of another two-dimensional membrane, MoS2. Distortions of this lattice also lead to a fictitious gauge field arising within the Dirac Hamiltonian, but with a distinct structure than seen in graphene. We present the full form of the fictitious gauge fields that arise in MoS2. Using the fictitious gauge fields we study the coupling between electronic and mechanical degrees of freedom, in particular the coupling between electrons and excited vibrational modes, or vibrons. To understand whether these effects may have a strong influence on electronic transport in MoS2 we calculate the dimensionless electron-vibron coupling constant for all vibron modes relevant for electronic transport. We find that electron-vibron coupling constant is highly sample specific and that the longitudinal stretching mode is the vibron with the dominant coupling. This however reaches maximum values which are lower than those observed in carbon nanostructures.
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Baugher, Britton William Herbert. "Electronic transport in atomically thin layered materials." Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/91393.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Physics, 2014.
125
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 101-110).
Electronic transport in atomically thin layered materials has been a burgeoning field of study since the discovery of isolated single layer graphene in 2004. Graphene, a semi-metal, has a unique gapless Dirac-like band structure at low electronic energies, giving rise to novel physical phenomena and applications based on them. Graphene is also light, strong, transparent, highly conductive, and flexible, making it a promising candidate for next-generation electronics. Graphene's success has led to a rapid expansion of the world of 2D electronics, as researchers search for corollary materials that will also support stable, atomically thin, crystalline structures. The family of transition metal diclialcogenides represent some of the most exciting advances in that effort. Crucially, transition metal dichalcogenides add semiconducting elements to the world of 2D materials, enabling digital electronics and optoelectronics. Moreover, the single layer variants of these materials can posses a direct band gap, which greatly enhances their optical properties. This thesis is comprised of work performed on graphene and the dichalcogenides MoS 2 and WSe2. Initially, we expand on the family of exciting graphene devices with new work in the fabrication and characterization of suspended graphene nanoelectromnechanical resonators. Here we will demonstrate novel suspension techniques for graphene devices, the ion beam etching of nanoscale patterns into suspended graphene systems, and characterization studies of high frequency graphene nanoelectromechanical resonators that approach the GHz regime. We will then describe pioneering work on the characterization of atomically thin transition metal dichalcogenides and the development of electronics and optoelectronics based on those materials. We will describe the intrinsic electronic transport properties of high quality monolayer and bilayer MoS 2 , performing Hall measurements and demonstrating the temperature dependence of the material's resistivity, mobility, and contact resistance. And we will present data on optoelectronic devices based on electrically tunable p-n diodes in monolayer WSe2 , demonstrating a photodiode, solar cell, and light emitting diode.
by Britton William Herbert Baugher.
Ph. D.
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Ye, Fan. "HIGHLY TUNABLE ATOMICALLY THIN RESONANTNANOELECTROMECHANICAL SYSTEMS (NEMS)." Case Western Reserve University School of Graduate Studies / OhioLINK, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=case1589392684740436.

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Farrokhi, M. Javad. "ELECTRONIC PROPERTIES OF ATOMICALLY THIN MATERIAL HETEROSTRUCTURES." UKnowledge, 2019. https://uknowledge.uky.edu/physastron_etds/67.

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There is a movement in the electronic industry toward building electronic devices with dimensions smaller than is currently possible. Atomically thin 2D material, such as graphene, bilayer graphene, hBN and MoS2 are great candidate for this goal and they have a potential set of novel electronic properties compare to their bulk counterparts due to the exhibition of quantum confinement effects. To this goal, we have investigated the electric field screening of multilayer 2D materials due to the presence of impurity charge in the interface and vertical electric fifield from back gate. Our result shows a dramatic difference of screening behavior in high and low charging limit, which depends on the number of layers as well. We also have an extensive study on quantum tunneling effect in graphene and bilayer graphene heterojunctions. The peculiar electronic properties of graphene lead to an unusual scattering effect of electron in graphene n-p junction. We implement the cohesive tunneling effect to explain the nonlinear electron transport in ultrashort channel graphene devices. This nonlinear behavior could make them tremendously useful for ultra-fast electronic applications.
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Reale, Francesco. "Chemical vapour deposition of atomically thin tungsten disulphide." Thesis, Imperial College London, 2017. http://hdl.handle.net/10044/1/56620.

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Transition metal dichalcogenides (TMDs) are van der Waals layered materials that have been known and studied for decades in their bulk form for applications such as solid-state lubricants and catalysts. However, TMDs were largely unexplored in their two-dimensional, atomically thin form. Their unique optical and electrical properties due to their reduced dimensionality started to emerge only in the last decade. In particular, group VI-TMDs (i.e., MoS2, WS2, MoSe2, WSe2) have been recently attracting tremendous attention as emerging post-graphene materials owing to their direct band-gap in the visible range which opens many prospects for diverse optoelectronic devices. Among them, atomically thin tungsten disulphide (WS2) has emerged as unique candidate for future nanotechnologies due to its superior optical, electrical and thermal properties. Any envisioned application of WS2 requires high-quality and large-area material obtainable via a scalable synthesis method. The chemical vapour deposition (CVD) of group VI-TMDs holds promise for the synthesis of high quality monolayered material extended over wafer-size areas. Nevertheless, the CVD growth of high-quality atomically thin WS2 layers requires further development since film continuity and thickness uniformity are normally limited to a few tens of micron-sized areas. The most extensively used CVD method to synthesize WS2 entails co-evaporation of tungsten oxide (WO3) and sulphur (S) powders. This choice of precursors is mainly dictated by their low toxicity compared to halides/organic precursors and effective replacement of O by S. However, due to the high sublimation temperature of WO3, the growth has to be carried out at high temperatures in between 950-1070°C and low pressures. In this work we demonstrate a novel facilitated CVD growth of high-quality atomically thin WS2 by using a novel molecular precursor approach. This strategy involves reagents which are carbon free, volatile and easily decomposable at low temperatures, allowing for the growth of mono- and bi-layered WS2 crystals with lateral sizes of 300µm at temperatures as low as 750°C, and with superior optical and electrical properties than those of naturally occurring materials. The charge carrier mobilities that we report are also higher compared to the ones obtained using innovative synthesis procedures, such as CVD growth on reusable gold substrates or metalorganic CVD on different oxides. Further we demonstrate tunability of the optical and electrical properties of WS2, inducing atomic doping with Indium.
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Venanzi, Tommaso. "Optical and infrared properties of atomically thin semiconductors." Technische Universität Dresden, 2020. https://tud.qucosa.de/id/qucosa%3A73364.

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Two-dimensional semiconductors are a topic of intense research and very attractive materials for new developments in different elds of semiconductor technology. These materials are promising candidates to satisfy the demand for faster and more compact electronics. They make new technological possibilities feasible, such as the realization and the commercial development of exible and semitransparent electronics. For these purposes, a deep knowledge of their electronic and optical properties is required. Besides the technological interest, numerous discoveries of fundamental physics were made with many others still to come. Recently for instance, superconductivity has been achieved in twisted bilayer graphene and high-temperature exciton condensation was observed in transition metal dichalcogenide heterostructures 1. The scope of this PhD is to investigate the infrared and optical properties of different two-dimensional semiconductor systems. To this end, various spectroscopic and time-resolved investigations on transition metal dichalcogenide monolayers and few-layer InSe crystals will be presented. First of all, the fabrication of exfoliated samples and van derWaals heterostructures has been successfully carried out and is described in detail. With this knowledge, the exciton physics of MoSe2 monolayer was studied. In particular, the effects of adsorbed gas molecules on the monolayer surface is discussed. It has been demonstrated that these adsorbates can localize excitons at low temperatures and that laser irradiation can release the binding of the physisorbed gas molecules. These results are of fundamental interest for spectroscopic investigations as well as relevant for opto-electronic devices as for instance gas sensors. Thereafter, several experiments were carried out with the use of the infrared free-electron laser FELBE. The general idea was to investigate the response of transition metal dichalcogenide monolayers in the far-infrared frequency range. An effect that was observed is a redshift of the trion induced by non-resonant infrared absorption. In fact, after the absorption of infrared radiation by free carriers, the energy and the momentum of the heated electron gas are transferred to the trion population, leading to a redshift of the trion resonance. By measuring the dynamics of this process, the cooling time of the electron-hole population and the far-infrared absorption of MoSe2 monolayer were extrapolated. The experiments conducted on few-layer InSe will be also presented in this thesis. The effects of hBN-encapsulation on the optical properties of InSe are discussed. The encapsulation in hBN does not only prevent the material from degradation, but also improves the optical quality by reducing the disorder potential in the crystal. Furthermore, the photoluminescence dynamics was investigated as a function of layer thickness and temperature. A bi-exponential decay was observed and the two contributions are attributed to the direct bandgap electron-hole transition and the defect assisted radiative recombination. Because of the direct-to-indirect bandgap crossover driven by the sample thickness, the dynamics gets slower while decreasing the number of layers. In particular, the fast component, i.e. the direct bandgap recombination, tends to disappear for thin InSe samples. Moreover, the photoluminescence lifetime decreases at high temperatures as a consequence of more effcient non-radiative recombination. Finally, heterostructures of MoSe2/WSe2 monolayer were fabricated and the rst spectroscopic results are presented. The interlayer exciton was observed and its dynamics was investigated.
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Manca, Marco. "Study of the optoelectronic properties of atomically thin WSe2." Thesis, Toulouse, INSA, 2019. http://www.theses.fr/2019ISAT0030.

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: Les dichalcogénures de métaux de transition (TMDs) constituent une famille de matériaux lamellaires riches de potentialités en optique et en électronique. La caractérisation des TMDs a permis la découverte de leurs propriétés physiques exceptionnelles : amincis à l’état de mono-feuillets, les TMDs semi-conducteurs deviennent des matériaux à bande interdite directe, donc très efficaces pour l’absorption ou l’émission de lumière. Le gap direct de ces semi-conducteurs est situé aux points K, à la frontière de la zone de Brillouin. Les propriétés optiques sont dominées par les excitons paires électron-trou liées par l’attraction de Coulomb et l’interaction lumière-matière y est extrêmement forte, l’absorption d’un faisceau lumineux pouvant atteindre 20% par monocouche. Outre l’existence du gap, les TMDs se différencient du graphène par leur fort couplage spin-orbite, ainsi que par la rupture de la symétrie d’inversion. En conséquence, les règles de sélection pour les transitions optiques à travers le gap ont un caractère chiral. Les états de spin opposés dans les bandes de valence et de conduction sont significativement clivés en énergie du fait de l’interaction spin-orbite. Cette propriété permet d’exciter optiquement des états de spin et de vallée spécifiques dans l’espace réciproque et de suivre leur comportement dynamique. Ainsi, les TMDs mono-feuillets constituent-ils des systèmes modèles très attractifs pour l’étude de la physique des états de spin et de vallée
Transition Metal Dichalcogenides (TMDs) are a family of layered materials with potential applications in optics and electronics. Following the discovery of graphene, TMDs were characterized and extraordinary physical properties were discovered: when thinned down to a monolayer, TMDs become direct band gap materials, therefore strongly facilitating light emission. The direct bandgap of these semiconductors is situated on the edge of the Brillouin zone, at the K-point. This is different from standard semiconductors for optoelectronics like GaAs where the bandgap is in the centre of the Brillouin zone. The optical properties are dominated by excitons, and light-matter interaction is extremely strong with up to 20% of light absorption per monolayer. In addition to a bandgap, TMDs present strong spin-orbit coupling and broken inversion symmetry. As a result, the optical transitions across the bandgap have chiral selection rules. The spin states in the valence and conduction bands are well separated in energy by the spin-orbit interaction. This makes it possible to optically address specific spin and valley states in momentum space and monitor their dynamics. As a result monolayer TMDs are exciting model systems for spin and valley physics: these research fields are termed spintronics and valleytronics. This motivated our work on the exact understanding of the optical transitions, their polarization selections rules and the different exciton states
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Lorchat, Étienne. "Optical spectroscopy of heterostructures based on atomically-thin semiconductors." Thesis, Strasbourg, 2019. http://www.theses.fr/2019STRAE035.

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Au cours de cette thèse, nous avons fabriqué et étudié par spectroscopie optique, des hétérostructures de van der Waals, composées de monofeuillets semi-conducteurs (dichalcogénures de métaux de transition, DMT) couplés à une monocouche de graphène ou à un résonateur plasmonique. Nous avons observé des modifications importantes de la dynamique des états excités optiquement dans le DMT (excitons) lorsque celui-ci est en contact avec le graphène. Le graphène neutralise la couche de DMT et permet un transfert non-radiatif d’excitons en moins de quelques picosecondes. Ce transfert d’énergie peut s’accompagner d’un photodopage extrinsèque considérablement moins efficace. La réduction de la durée de vie des excitons du DMT en présence de graphène a été exploitée pour montrer que leur pseudo-spin de vallée maintenait un degré de polarisation et de cohérence important jusqu’à température ambiante. Enfin, en couplant fortement les excitons d’un DMT aux modes d’un résonateur plasmonique à phase géométrique, nous avons mis en évidence, à température ambiante, le verrouillage du pseudo-spin de vallée sur la direction de propagation des polaritons chiraux (chiralitons) issus du couplage
During this thesis, we have fabricated and studied by optical spectroscopy, van der Waals heterostructures composed of semiconductor monolayers (transition metal dichalcogenides, TMD) coupled to a graphene monolayer or to a plasmonic resonator. We have observed significant changes in the dynamics of the TMD optically excited states (excitons) when it is in direct contact with graphene. Graphene neutralizes the TMD monolayer and enables non-radiative transfer of excitons within less than a few picoseconds. This energy transfer process may be accompanied by a considerably less efficient, extrinsic photodoping. The reduced lifetime of TMD excitons in the presence of graphene has been exploited to show that their valley pseudo-spin maintains a high degree of polarization and coherence up to room temperature. Finally, by strongly coupling TMD excitons to the modes of a geometric phase plasmonic resonator, we have demonstrated, at room temperature, that the momentum of the resulting chiral polaritons (chiralitons) is locked to their valley pseudo-spin
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Hudson, David Christopher. "Two dimensional atomically thin materials and hybrid superconducting devices." Thesis, University of Exeter, 2014. http://hdl.handle.net/10871/16034.

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In this thesis a variety of topics concerning 2D materials that have been separated from bulk layered crystals are discussed. Throughout the thesis, single and few layers of graphene, fluorinated graphene, MoS2 and WS2 are used. Two new methods of freely suspending 2D materials are presented as well as a method of removing the background from optical images. This aids contrast measurements for the determination of the number of layers. Fluorinated graphene is found to be sensitive to beta radiation; the resistance of fluorinated graphene transistors is shown to decrease upon exposure to the radiation. This happens due to the carbon-fluorine bond breaking. The sp3 hybridised structure of the fluorinated graphene is reduced back into the sp2 hybridised structure of pristine graphene. The superconducting properties of molybdenum-rhenium are characterised. It is shown to have a transition temperature of 7.5 K. It is also discovered that the material has a resistance to hydrofluoric acid; the acid etches nearly all other superconducting materials. This makes MoRe a possible candidate to explore superconductivity in conjunction with high mobility suspended graphene. To see if the material is compatible with graphene, a supported Josephson junction is fabricated. A proximity induced super current is sustained through the junction up to biases of ∼ 200 nA. The temperature dependence of the conductivity is measured for both suspended MoS2 and WS2 on a hexagonal boron nitride substrate. The dominant hopping mechanism that contributes to the conductivity at low temperatures is found to be Mott variable range hopping, with the characteristic T−1/3 dependence. The hopping transport is due to impurities that are intrinsic to the crystals, this is confirmed by comparing the results with those of supported devices on SiO2.
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Books on the topic "Atomically thin"

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Kasirga, T. Serkan. Thermal Conductivity Measurements in Atomically Thin Materials and Devices. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-5348-6.

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Magorrian, Samuel J. Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-25715-6.

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Kagaku Gijutsu Shinkō Kikō. Kenkyū Kaihatsu Senryaku Sentā. Nanotekunorojī Zairyō Yunitto. Nijigen kinōsei genshi hakumaku ni yoru shinki zairyō, kakushin debaisu no kaihatsu: Development of new materials and innovative devices using atomically thin 2D functional films. Tōkyō-to Chiyoda-ku: Kagaku Gijutsu Shinkō Kikō Kenkyū Kaihatsu Senryaku Sentā Nanotekunorojī Zairyō Yunitto, 2012.

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Dragoman, Mircea, and Daniela Dragoman. 2D Nanoelectronics: Physics and Devices of Atomically Thin Materials. Springer, 2018.

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Dragoman, Mircea, and Daniela Dragoman. 2D Nanoelectronics: Physics and Devices of Atomically Thin Materials. Springer, 2016.

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Dragoman, Mircea, and Daniela Dragoman. 2D Nanoelectronics: Physics and Devices of Atomically Thin Materials. Springer, 2016.

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Kasirga, T. Serkan. Thermal Conductivity Measurements in Atomically Thin Materials and Devices. Springer, 2020.

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Magorrian, Samuel J. Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide. Springer, 2019.

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Magorrian, Samuel J. Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide. Springer International Publishing AG, 2020.

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Roditchev, D., T. Cren, C. Brun, and M. V. Milošević. Local-Scale Spectroscopic Studies of Vortex Organization in Mesoscopic Superconductors. Edited by A. V. Narlikar. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780198738169.013.2.

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This article examines the vortex matter of mesoscopic superconductors with numerous vortex states that do not exist in bulk superconductors. Using scanning tunneling microscopy/spectroscopy, it investigates the organization of vortex cores at different levels of confinement. The article begins with a discussion of the basic properties of quantum vortices in superconductors and experimental requirements for studying vortex confinement phenomena. It then considers the effect of sample size and shape on vortex distribution and pinning, along with the resulting ultra-dense configurations that cannot be achieved in bulk superconductors. It also describes the peculiar features of vortices in atomically thin superconductors having mixed Abrikosov–Josephson vortices.
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Book chapters on the topic "Atomically thin"

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Kasirga, T. Serkan. "Atomically Thin Materials." In Thermal Conductivity Measurements in Atomically Thin Materials and Devices, 1–10. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-5348-6_1.

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Lin, Yu-Chuan. "Atomically Thin Resonant Tunnel Diodes." In Springer Theses, 113–25. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-00332-6_7.

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Palacios-Berraquero, Carmen. "Atomically-Thin Quantum Light Emitting Diodes." In Quantum Confined Excitons in 2-Dimensional Materials, 71–89. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-01482-7_4.

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Dragoman, Mircea, and Daniela Dragoman. "Electronic Devices Based on Atomically Thin Materials." In 2D Nanoelectronics, 161–96. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-48437-2_3.

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Schlichting, K. P., and H. G. Park. "Chapter 3. Mass Transport Across Atomically Thin Membranes." In Graphene-based Membranes for Mass Transport Applications, 43–75. Cambridge: Royal Society of Chemistry, 2018. http://dx.doi.org/10.1039/9781788013017-00043.

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Lin, Yu-Chuan. "Atomically Thin Heterostructures Based on Monolayer WSe2 and Graphene." In Springer Theses, 89–101. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-00332-6_5.

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Kasirga, T. Serkan. "Thermal Conductivity Measurements in 2D Materials." In Thermal Conductivity Measurements in Atomically Thin Materials and Devices, 11–27. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-5348-6_2.

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Kasirga, T. Serkan. "Thermal Conductivity Measurements via the Bolometric Effect." In Thermal Conductivity Measurements in Atomically Thin Materials and Devices, 29–50. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-5348-6_3.

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Quereda, Jorge, Gabino Rubio-Bollinger, Nicolás Agraït, and Andres Castellanos-Gomez. "Mechanical Properties and Electric Field Screening of Atomically Thin MoS2 Crystals." In Lecture Notes in Nanoscale Science and Technology, 129–53. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-02850-7_6.

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Geohegan, David B., Alex A. Puretzky, Aziz Boulesbaa, Gerd Duscher, Gyula Eres, Xufan Li, Liangbo Liang, et al. "Laser Synthesis, Processing, and Spectroscopy of Atomically-Thin Two Dimensional Materials." In Advances in the Application of Lasers in Materials Science, 1–37. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-96845-2_1.

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Conference papers on the topic "Atomically thin"

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"Atomically thin devices." In 2014 72nd Annual Device Research Conference (DRC). IEEE, 2014. http://dx.doi.org/10.1109/drc.2014.6872356.

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"Atomically thin devices." In 2015 73rd Annual Device Research Conference (DRC). IEEE, 2015. http://dx.doi.org/10.1109/drc.2015.7175636.

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"Atomically thin devices II." In 2015 73rd Annual Device Research Conference (DRC). IEEE, 2015. http://dx.doi.org/10.1109/drc.2015.7175651.

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"Atomically thin devices I." In 2016 74th Annual Device Research Conference (DRC). IEEE, 2016. http://dx.doi.org/10.1109/drc.2016.7548470.

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"Atomically thin devices II." In 2016 74th Annual Device Research Conference (DRC). IEEE, 2016. http://dx.doi.org/10.1109/drc.2016.7548482.

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Tsukagoshi, K. "(Invited) Atomically-thin Semiconductors." In 2015 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/ssdm.2015.d-2-1.

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Li, Xiangping. "Atomically thin 2D meta-optics." In Conference on Lasers and Electro-Optics/Pacific Rim. Washington, D.C.: OSA, 2020. http://dx.doi.org/10.1364/cleopr.2020.c11e_3.

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de Abajo, F. Javier Garcia. "Plasmonics with atomically thin materials." In 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). IEEE, 2017. http://dx.doi.org/10.1109/cleoe-eqec.2017.8087632.

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García de Abajo, F. Javier. "Photonics with atomically thin materials." In Active Photonic Platforms (APP) 2022, edited by Ganapathi S. Subramania and Stavroula Foteinopoulou. SPIE, 2022. http://dx.doi.org/10.1117/12.2633948.

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Echarri, A. Rodriguez, Joel D. Cox, and F. Javier Garcia de Abajo. "Acoustic Plasmons in Atomically-Thin Heterostructures." In 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). IEEE, 2019. http://dx.doi.org/10.1109/cleoe-eqec.2019.8871900.

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Reports on the topic "Atomically thin"

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Kaplan, Daniel, Kendall Mills, and Venkataraman Swaminathan. Chemical Vapor Deposition of Atomically-Thin Molybdenum Disulfide (MoS2). Fort Belvoir, VA: Defense Technical Information Center, March 2015. http://dx.doi.org/10.21236/ada613852.

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Soh, Daniel Beom Soo. Optical nonlinearities of excitonic states in atomically thin 2D transition metal dichalcogenides. Office of Scientific and Technical Information (OSTI), August 2017. http://dx.doi.org/10.2172/1395643.

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