Relevant bibliographies by topics / Artificial Sapphires

Academic literature on the topic 'Artificial Sapphires'

Author: Grafiati
Published: 27 July 2024
Last updated: 28 July 2024

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Journal articles on the topic "Artificial Sapphires"

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Ohshima, Shigetoshi. "Hetero-Epitaxial Growth of YBCO and MgB2 Thin Films on Decorated Substrates with Nano-Wires and Nano-Particles." MRS Proceedings 1454 (2012): 105–14. http://dx.doi.org/10.1557/opl.2012.1485.

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ABSTRACTSuperconducting NMR pickup coils have to have a low surface resistance (Rs) under a high magnetic field. One way of reducing the Rs of superconducting thin films is adding artificial pins to the films. We examined the hetero-epitaxial growth of MgB2and YBCO thin films on decorated sapphire and MgO substrates while using nano-wires and nano-particles to add pins to the films.We used ZnO nano-wire to add artificial grain boundary pins to MgB2 films. The tilted c-plane sapphire substrate with nano-step edges was used for these substrates. The terrace width with one lattice step edge can be controlled by changing the tilt angle. AFM images showed that the tilted c-plane sapphire substrate had straight nano-step edges. ZnO nono-wires were decorated on the nano-step edges by MOCVD, and then deposited on MgB2 films by sputtering. The Rs of the films was then measured with a sapphire rod resonator. The Rs of MgB2 thin films fabricated on the tilted c-plane sapphire substrate with ZnO nano-wires was lower than that of MgB2thin films on a conventional sapphire substrate under a high magnetic field.We used BaZrO3(BZO) nano-particles to add the artificial pins to YBCO thin films. The BZO particles on the MgO substrates were fabricated by laser deposition. The size and density of these particles were controlled with a pulse number of laser shot. YBCO thin films were formed on decorated MgO substrate by laser deposition. The Rs of YBCO thin films on the decorated MgO substrate was lower than that of the YBCO films formed on a conventional MgO substrate under a high magnetic field.We clarified that artificial pins in MgB2and YBCO thin films are useful for decreasing the Rs under a high magnetic field.
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Ago, Hiroki, Naoki Ishigami, Kenta Imamoto, Tomoko Suzuki, Ken-Ichi Ikeda, Masaharu Tsuji, Tatsuya Ikuta, and Koji Takahashi. "Horizontally-Aligned Single-Walled Carbon Nanotubes on Sapphire." Journal of Nanoscience and Nanotechnology 8, no. 11 (November 1, 2008): 6165–69. http://dx.doi.org/10.1166/jnn.2008.sw01.

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Recently, we discovered the horizontally-aligned growth of single-walled carbon nanotubes (SWCNTs) on R- and A-plane sapphire substrates, which we call "atomic arrangement-programmed growth (AAP growth)." This is a unique method because the growth direction of SWCNTs is determined by the crystallographic direction of the sapphire surface. In this paper, we report on the characterization of the aligned SWCNTs by polarized Raman and electron transport measurements, and on the effect of the step/terrace structure formed on sapphire surface. These results may open up a possibility of creating the artificial SWCNT network, which can be applied to high-performance electronics.
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3

Loffer, Franklin D. "Fluid cooling of artificial sapphire tips of laser." American Journal of Obstetrics and Gynecology 163, no. 2 (August 1990): 681. http://dx.doi.org/10.1016/0002-9378(90)91232-2.

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4

Lin, Liujun. "Preliminary Study on Sapphire Color Grading Method Based on Automatic Clustering Algorithm of Color Space Features." Journal of Physics: Conference Series 2074, no. 1 (November 1, 2021): 012065. http://dx.doi.org/10.1088/1742-6596/2074/1/012065.

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Abstract Traditionally, the color grading of sapphire is mainly based on the naked eye judgment of the appraiser. This judgment standard is not clear enough, and the judgment result has a greater subjective influence, which affects the accuracy of the classification. In this study, the GEM-3000 ultraviolet-visible spectrophotometer was selected, and the color features of 180 sapphire samples were extracted and classified using the CIE1976 color space of the device. The Kmeans algorithm was used to cluster analysis of 140 samples, and the separability of the color space features of different color levels was verified, and the center sample of each color level was obtained. The Euclidean distance between the centers of the remaining 40 samples is calculated, and each color grade prediction label is determined, and the sapphire color is automatically classified based on this. The experimental results show that the accuracy of sapphire color classification using the above method is 97.5%, which confirms the effect and accuracy of the artificial intelligence method in sapphire color classification.
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5

Akatsu, T., G. Sasaki, N. Hosoda, and T. Suga. "Microstructure and strength of Al-sapphire interface by means of the surface activated bonding method." Journal of Materials Research 12, no. 3 (March 1997): 852–56. http://dx.doi.org/10.1557/jmr.1997.0124.

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Sapphire (α–Al2O3) and Al were joined by means of the surface activated bonding (SAB) method in an ultrahigh vacuum at room temperature. Tensile tests have shown that failure occurred not along the interface but inside the Al bulk near the interface. High resolution transmission electron microscopy has revealed the formation of a direct interface between Al and sapphire, indicating the possibility to artificially fabricate an atomically direct interface of dissimilar materials at room temperature. However, an intermediate layer was partially observed, which might be attributed to the effect of fast atom beam irradiation of the sapphire surface.
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6

Chen, Ting Yi, Wen Lu, Wei Liu, Ya Dian Xie, and Ye Qi Fu. "Preparation of Purity Al2O3 for LED Sapphire Materials by Ammonium Aluminum Sulfate and its Performance." Advanced Materials Research 1053 (October 2014): 50–55. http://dx.doi.org/10.4028/www.scientific.net/amr.1053.50.

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The preparation of aluminium sulfate adopting the sulfuric acid heating method with Al (OH)3 as raw material, and join the β complexing agent in aluminium sulfate solution to remove impurities; ammonium aluminum sulfat is prepared by the reaction of the ammonium solution and aluminum sulfate, and purify ammonium aluminum sulfate to get high purity ammonium aluminum sulfate crystals containing crystal water. Purify the crystallization of ammonium aluminum sulfate with containing water treated at 1250 °C for 3 h. Then the high purity alumina was prepared. Break the high purity alumina to press, and then again process in 3 h under 1650 °C, get Al203 which is craw materials of sapphire crystal LED. The samples were characterized by atomic absorption spectrum (AAS), differential thermal analysis (TG/DTA), scanning electron microscopy, XRD and chemical analysis. The purity of high purity alumina is 99.991%, which will be applied to the LED manufacturers on sapphire artificial sapphire growth test.
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7

Liu, Xue‐Qing, Shuang‐Ning Yang, Lei Yu, Qi‐Dai Chen, Yong‐Lai Zhang, and Hong‐Bo Sun. "Rapid Engraving of Artificial Compound Eyes from Curved Sapphire Substrate." Advanced Functional Materials 29, no. 18 (March 3, 2019): 1900037. http://dx.doi.org/10.1002/adfm.201900037.

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8

Barradas, N. P., A. Vieira, and E. Alves. "Artificial neural network analysis of RBS data of Er-implanted sapphire." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 175-177 (April 2001): 108–12. http://dx.doi.org/10.1016/s0168-583x(00)00548-6.

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9

Vieira, A., N. P. Barradas, and E. Alves. "Analysis of sapphire implanted with different elements using artificial neural networks." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 190, no. 1-4 (May 2002): 241–46. http://dx.doi.org/10.1016/s0168-583x(01)01294-0.

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10

Bhuvaneshwar, G. S., C. V. Muraleedharan, G. A. V. Lal, A. V. Ramani, and M. S. Valiathan. "Synthetic Sapphire as an Artificial Heart Valve Occluder—Promise and Problems." Transactions of the Indian Ceramic Society 50, no. 4 (January 1991): 87–92. http://dx.doi.org/10.1080/0371750x.1991.10804498.

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Books on the topic "Artificial Sapphires"

1

Themelis, Ted. Flux-Enhanced Rubies & Sapphires. T. Themelis, 2004.

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2

Sapphire: Structure, Technology and Applications. Nova Novinka, 2013.

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Book chapters on the topic "Artificial Sapphires"

1

Konolige, Kurt. "COLBERT: A language for reactive control in Sapphira." In KI-97: Advances in Artificial Intelligence, 31–52. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/3540634932_2.

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Conference papers on the topic "Artificial Sapphires"

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Ignatenko, A., N. Baboi, H. Henschel, O. Hensler, W. Lange, W. Lohmann, M. Schmitz, S. Schuwalow, and K. Wittenburg. "Test and first application of artificial sapphire sensors." In 2010 IEEE Nuclear Science Symposium and Medical Imaging Conference (2010 NSS/MIC). IEEE, 2010. http://dx.doi.org/10.1109/nssmic.2010.5873839.

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Zhu, Heng, Heng Zhao, Zhigang Li, DingYao Yan, and Ping Ma. "The full aperture processing technical research in fabricating large sapphire window element." In Second Target Recognition and Artificial Intelligence Summit Forum, edited by Tianran Wang, Tianyou Chai, Huitao Fan, and Qifeng Yu. SPIE, 2020. http://dx.doi.org/10.1117/12.2553184.

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