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1

Huber, Dieter. InP/InGaAs single hetero-junction bipolar transistors for integrated photoreceivers operating at 40 Gb/s and beyond. Konstanz: Hartung-Gorre, 2002.

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2

Adachi, Sadao. Physical properties of III-V semiconductor compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP. New York: Wiley, 1992.

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3

Mohanty, Deba R. Arming the Indian arsenal: Challenges and policy options. New Delhi: Rupa & Co. in association with Observer Research Foundation, 2009.

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4

Foundation, Observer Research, ed. Arming the Indian arsenal: Challenges and policy options. New Delhi: Rupa & Co. in association with Observer Research Foundation, 2009.

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5

Chris, Smith. India's ad hoc arsenal: Arms procurement in historical perspective. Oxford: Oxford University Press, 1994.

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6

Prozessverständnis einer Naturkatastrophe: Eine geo- und hydrochemische Untersuchung der regionalen Arsen-Anreicherung im Grundwasser West-Bengalens (Indien). Karlsruhe: Universitätsverlag, 2005.

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7

Biswas, Ayan. A Framework for Rural Drinking Water Quality Management (WQM): Collating Experiences from the Voluntary Sector. Edited by Rima Kashyap. Bangalore, India: Arghyam, 2012.

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8

Huber, Alex. Noise characterization and modeling of InP/InGaAs HBTs for RF circuit design. Konstanz: Hartung-Gorre, 2000.

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9

Blaser, Markus. Monolithically integrated InGaAs/Inp photodiode-junction field-effect transistor receivers for fiber-optic telecommunication. Konstanz: Hartung-Gorre, 1997.

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10

Adachi, Sadao. Physical Properties of III-V Semiconductor Compounds: InP, Inas, Gaas, GaP, InGaAs and InGaAsP. Wiley & Sons, Limited, John, 2005.

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11

Pallab, Bhattacharya, ed. Properties of lattice-matched and strained indium gallium arsenide. London: INSPEC, the Institution of Electrical Engineers, 1993.

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12

Pallab, Bhattacharya, and INSPEC (Information service), eds. Properties of lattice-matched and strained indium gallium arsenide. London: INSPEC, Institution of Electrical Engineers, 1993.

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13

Pallab, Bhattacharya, ed. Properties of lattice-matched and strained indium gallium arsenide. London: INSPEC, the Institution of Electrical Engineers, 1993.

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14

M, Carter Janet, Rosebud Sioux Tribe, South Dakota Geological Survey, and Geological Survey (U.S.), eds. Source, occurrence, and extent of arsenic in the Grass Mountain area of the Rosebud Indian Reservation, South Dakota. [Rapid City, S.D.]: U.S. Dept. of the Interior, U.S. Geological Survey, 1998.

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15

Arming the Indian arsenal: Challenges and policy options. New Delhi: Rupa & Co., 2009.

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16

Yu, Young-June. Noise properties of InGaAs/InAlAs multiquantum-well heterostructure p-i-n photodiodes. 1989.

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17

Temperature dependence of photoluminescence in InGaAsP/InP strained MQW heterostructures. [Washington, DC: National Aeronautics and Space Administration, 1996.

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18

C, Papen G., and United States. National Aeronautics and Space Administration., eds. Development of advanced laser diode sources: Final report, NASA NAG 1-1861. [Washington, DC: National Aeronautics and Space Administration, 1998.

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19

C, Papen G., and United States. National Aeronautics and Space Administration., eds. Development of advanced laser diode sources: Final report, NASA NAG 1-1861. [Washington, DC: National Aeronautics and Space Administration, 1998.

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20

D, Martin R., and United States. National Aeronautics and Space Administration., eds. CW performance of an InGaAs-GaAs-AlGaAs laterally-coupled distributed feedback (LC-DFB) ridge laser diode. [Washington, DC: National Aeronautics and Space Administration, 1995.

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21

Johnston, Scott, AL Ramanathan, Abhijit Mukherjee, and Bibhash Nath. Safe and Sustainable Use of Arsenic-Contaminated Aquifers in the Gangetic Plain: A Multidisciplinary Approach. Springer, 2015.

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22

Source, occurrence, and extent of arsenic in the Grass Mountain Area of the Rosebud Indian Reservation, South Dakota. [Washington. D. C.]: U. S. Department of the Interior, U. S. Geological Survey, 1998.

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23

Cobalt in hard metals and cobalt sulfate, gallium arsenide, indium phosphide, and vanadium pentoxide. Lyon, France: International Agency for Research on Cancer, 2006.

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24

(Contributor), WHO, ed. Cobalt in Hard-metals and Cobalt Sulfate, Gallium Arsenide, Indium Phosphide and Vanadium Pentoxide (IARC Monographs). World Health Organisation, 2006.

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25

Quen, Tserng Hua, and United States. National Aeronautics and Space Administration., eds. Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. [Washington, DC: National Aeronautics and Space Administration, 1997.

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26

Quen, Tserng Hua, and United States. National Aeronautics and Space Administration., eds. Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. [Washington, DC: National Aeronautics and Space Administration, 1997.

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27

Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. [Washington, DC: National Aeronautics and Space Administration, 1997.

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28

Quen, Tserng Hua, and United States. National Aeronautics and Space Administration., eds. Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. [Washington, DC: National Aeronautics and Space Administration, 1997.

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29

InGaAsSb/GaSb thermophotovoltaic cells, phase I effort: Under contract NAS3-96060. [Washington, DC: National Aeronautics and Space Administration, 1997.

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30

United States. National Aeronautics and Space Administration., ed. Investigation of the basic physics of high efficiency semiconductor hot carrier solar cell: Annual status report for NASA grant #NAG 3-1490. [Washington, DC: National Aeronautics and Space Administration, 1995.

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