Books on the topic 'Arsenid inditý'
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Huber, Dieter. InP/InGaAs single hetero-junction bipolar transistors for integrated photoreceivers operating at 40 Gb/s and beyond. Konstanz: Hartung-Gorre, 2002.
Find full textAdachi, Sadao. Physical properties of III-V semiconductor compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP. New York: Wiley, 1992.
Find full textMohanty, Deba R. Arming the Indian arsenal: Challenges and policy options. New Delhi: Rupa & Co. in association with Observer Research Foundation, 2009.
Find full textFoundation, Observer Research, ed. Arming the Indian arsenal: Challenges and policy options. New Delhi: Rupa & Co. in association with Observer Research Foundation, 2009.
Find full textChris, Smith. India's ad hoc arsenal: Arms procurement in historical perspective. Oxford: Oxford University Press, 1994.
Find full textProzessverständnis einer Naturkatastrophe: Eine geo- und hydrochemische Untersuchung der regionalen Arsen-Anreicherung im Grundwasser West-Bengalens (Indien). Karlsruhe: Universitätsverlag, 2005.
Find full textBiswas, Ayan. A Framework for Rural Drinking Water Quality Management (WQM): Collating Experiences from the Voluntary Sector. Edited by Rima Kashyap. Bangalore, India: Arghyam, 2012.
Find full textHuber, Alex. Noise characterization and modeling of InP/InGaAs HBTs for RF circuit design. Konstanz: Hartung-Gorre, 2000.
Find full textBlaser, Markus. Monolithically integrated InGaAs/Inp photodiode-junction field-effect transistor receivers for fiber-optic telecommunication. Konstanz: Hartung-Gorre, 1997.
Find full textAdachi, Sadao. Physical Properties of III-V Semiconductor Compounds: InP, Inas, Gaas, GaP, InGaAs and InGaAsP. Wiley & Sons, Limited, John, 2005.
Find full textPallab, Bhattacharya, ed. Properties of lattice-matched and strained indium gallium arsenide. London: INSPEC, the Institution of Electrical Engineers, 1993.
Find full textPallab, Bhattacharya, and INSPEC (Information service), eds. Properties of lattice-matched and strained indium gallium arsenide. London: INSPEC, Institution of Electrical Engineers, 1993.
Find full textPallab, Bhattacharya, ed. Properties of lattice-matched and strained indium gallium arsenide. London: INSPEC, the Institution of Electrical Engineers, 1993.
Find full textM, Carter Janet, Rosebud Sioux Tribe, South Dakota Geological Survey, and Geological Survey (U.S.), eds. Source, occurrence, and extent of arsenic in the Grass Mountain area of the Rosebud Indian Reservation, South Dakota. [Rapid City, S.D.]: U.S. Dept. of the Interior, U.S. Geological Survey, 1998.
Find full textArming the Indian arsenal: Challenges and policy options. New Delhi: Rupa & Co., 2009.
Find full textYu, Young-June. Noise properties of InGaAs/InAlAs multiquantum-well heterostructure p-i-n photodiodes. 1989.
Find full textTemperature dependence of photoluminescence in InGaAsP/InP strained MQW heterostructures. [Washington, DC: National Aeronautics and Space Administration, 1996.
Find full textC, Papen G., and United States. National Aeronautics and Space Administration., eds. Development of advanced laser diode sources: Final report, NASA NAG 1-1861. [Washington, DC: National Aeronautics and Space Administration, 1998.
Find full textC, Papen G., and United States. National Aeronautics and Space Administration., eds. Development of advanced laser diode sources: Final report, NASA NAG 1-1861. [Washington, DC: National Aeronautics and Space Administration, 1998.
Find full textD, Martin R., and United States. National Aeronautics and Space Administration., eds. CW performance of an InGaAs-GaAs-AlGaAs laterally-coupled distributed feedback (LC-DFB) ridge laser diode. [Washington, DC: National Aeronautics and Space Administration, 1995.
Find full textJohnston, Scott, AL Ramanathan, Abhijit Mukherjee, and Bibhash Nath. Safe and Sustainable Use of Arsenic-Contaminated Aquifers in the Gangetic Plain: A Multidisciplinary Approach. Springer, 2015.
Find full textSource, occurrence, and extent of arsenic in the Grass Mountain Area of the Rosebud Indian Reservation, South Dakota. [Washington. D. C.]: U. S. Department of the Interior, U. S. Geological Survey, 1998.
Find full textCobalt in hard metals and cobalt sulfate, gallium arsenide, indium phosphide, and vanadium pentoxide. Lyon, France: International Agency for Research on Cancer, 2006.
Find full text(Contributor), WHO, ed. Cobalt in Hard-metals and Cobalt Sulfate, Gallium Arsenide, Indium Phosphide and Vanadium Pentoxide (IARC Monographs). World Health Organisation, 2006.
Find full textQuen, Tserng Hua, and United States. National Aeronautics and Space Administration., eds. Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. [Washington, DC: National Aeronautics and Space Administration, 1997.
Find full textQuen, Tserng Hua, and United States. National Aeronautics and Space Administration., eds. Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. [Washington, DC: National Aeronautics and Space Administration, 1997.
Find full textKa-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. [Washington, DC: National Aeronautics and Space Administration, 1997.
Find full textQuen, Tserng Hua, and United States. National Aeronautics and Space Administration., eds. Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. [Washington, DC: National Aeronautics and Space Administration, 1997.
Find full textInGaAsSb/GaSb thermophotovoltaic cells, phase I effort: Under contract NAS3-96060. [Washington, DC: National Aeronautics and Space Administration, 1997.
Find full textUnited States. National Aeronautics and Space Administration., ed. Investigation of the basic physics of high efficiency semiconductor hot carrier solar cell: Annual status report for NASA grant #NAG 3-1490. [Washington, DC: National Aeronautics and Space Administration, 1995.
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