Relevant bibliographies by topics / Arsenid inditý

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  2. Dissertations / Theses
  3. Books
  4. Book chapters
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Academic literature on the topic 'Arsenid inditý'

Author: Grafiati
Published: 28 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Arsenid inditý"

1

Sinha, B., and K. Bhattacharyya. "Arsenic speciation in rice and risk assessment of inorganic arsenic from Ghentugachhi village of Chakdaha block, Nadia, West Bengal, India." Oryza-An International Journal on Rice 57, no. 2 (June 30, 2020): 85–93. http://dx.doi.org/10.35709/ory.2020.57.2.1.

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The purpose of the present study was to assess arsenic (As) speciation in rice from West Bengal, India, in order to improve understanding of the health risk posed by arsenic in Indian rice. Rice is a potentially important route of human exposure to arsenic, especially in populations with rice-based diets. However, arsenic toxicity varies greatly with species. Determination of arsenic (As) species in rice is necessary because inorganic As species are more toxic than organic As. Total arsenic was determined by inductively coupled plasma mass spectrometry; arsenite, arsenate, monomethylarsonic acid, and dimethyarsinic acid were quantified by high-performance liquid chromatography- inductively coupled plasma mass spectrometry. The analysis of a rice flour certified reference material (SRM-1568-a) were evaluated for quality assurance. The use of 2M TFA for extraction with an isocratic mobile phase was optimized for extraction and employed for arsenic speciation in rice. The extraction method showed a high recovery of arsenic. Most of the As species in rice were noticed to be inorganic [Arsenite (As-III), Arsenate As-V]. It appeared very clear from the present study that inorganic arsenic shared maximum arsenic load in rice straw while in grains it is considerably low. As species recovered from rice grain and straw are principally As-III and As-V with a little share of DMA and almost non-detectable MMA and As-B. The order of As species in rice grain revealed in this study were As-III (54.5-65.4 %)>As-V(21.2-28.3%)>DMA(5.2%).
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Natarajan, K. A. "Microbial Aspects of Acid Generation and Bioremediation with Relevance to Indian Mining." Advanced Materials Research 71-73 (May 2009): 645–48. http://dx.doi.org/10.4028/www.scientific.net/amr.71-73.645.

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The role of Acidithiobacillus group of bacteria in acid generation and heavy metal dissolution was studied with relevance to some Indian mines. Microorganisms implicated in acid generation such as Acidithiobacillus ferrooxidans, Acidithiobacillus thiooxidans and Leptospirillum ferrooxidans were isolated from abandoned mines, waste rocks and tailing dumps. Arsenite oxidizing Thiomonas and Bacillus group of bacteria were isolated and their ability to oxidize As (III) to As (V) established. Mine isolated Sulfate reducing bacteria were used to remove dissolved copper, zinc, iron and arsenic from solutions.
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RUANGWISES, SUTHEP, and NONGLUCK RUANGWISES. "Concentrations of Total and Inorganic Arsenic in Fresh Fish, Mollusks, and Crustaceans from the Gulf of Thailand." Journal of Food Protection 74, no. 3 (March 1, 2011): 450–55. http://dx.doi.org/10.4315/0362-028x.jfp-10-445.

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Concentrations of total and inorganic arsenic were determined in 120 samples of eight marine animals collected from the Gulf of Thailand between March and May 2008. Two species with the highest annual catch from each of four marine animal groups were analyzed: fish (Indo-Pacific mackerel and goldstripe sardine), bivalves (green mussel and blood cockle), cephalopods (pharaoh cuttlefish and Indian squid), and crustaceans (banana prawn and swimming crab). Concentrations of inorganic arsenic based on wet weight ranged from 0.012 μg/g in Indian squids to 0.603 μg/g in blood cockles. Average percentages of inorganic arsenic with respect to total arsenic ranged from 1.2% in banana prawns to 7.3% in blood cockles. Blood cockles also exhibited the highest levels of total arsenic (5.26 ± 2.01 μg/g) and inorganic arsenic (0.352 ± 0.148 μg/g). The levels of inorganic arsenic in the study samples were much lower than the Thai regulatory limit of 2 μg/g (wet wt) and hence are safe for human consumption.
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Thakur, Sapna, Shruti Choudhary, Preeti Dubey, and Pankaj Bhardwaj. "Comparative transcriptome profiling reveals the reprogramming of gene networks under arsenic stress in Indian mustard." Genome 62, no. 12 (December 2019): 833–47. http://dx.doi.org/10.1139/gen-2018-0152.

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Arsenic is a widespread toxic metalloid that is classified as a class I carcinogen known to cause adverse health effects in humans. In the present study, we investigated arsenic accumulation potential and comparative gene expression in Indian mustard. The amount of arsenic accumulated in shoots varied in the range of 15.99–1138.70 mg/kg on a dry weight basis among five cultivars. Comparative expression analysis revealed 10 870 significantly differentially expressed genes mostly belonging to response to stress, metabolic processes, signal transduction, transporter activity, and transcription regulator activity to be up-regulated, while most of the genes involved in photosynthesis, developmental processes, and cell growth were found to be down-regulated in arsenic-treated tissues. Further, pathway analysis using the KEGG Automated Annotation server (KAAS) revealed a large-scale reprogramming of genes involved in genetic and environmental information processing pathways. Top pathways with maximum KEGG orthology hits included carbon metabolism (2.5%), biosynthesis of amino acids (2.1%), plant hormone signal transduction (1.4%), and glutathione metabolism (0.6%). A transcriptomic investigation to understand the arsenic accumulation and detoxification in Indian mustard will not only help to improve its phytoremediation efficiency but also add to the control measures required to check bioaccumulation of arsenic in the food chain.
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Hossain, M. Amir, Amitava Mukharjee, Mrinal Kumar Sengupta, Sad Ahamed, Bhaskar Das, Bishwajit Nayak, Arup Pal, Mohammad Mahmudur Rahman, and Dipankar Chakraborti. "Million Dollar Arsenic Removal Plants in West Bengal, India: Useful or Not?" Water Quality Research Journal 41, no. 2 (May 1, 2006): 216–25. http://dx.doi.org/10.2166/wqrj.2006.025.

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Abstract The effectiveness of arsenic removal plants (ARPs) to provide safe water was evaluated based on a study of 577 ARPs out of 1900 installed in 5 arsenic-affected districts of West Bengal, India. Out of 577, 145 (25.1%) were found in defunct condition. Both raw and filtered water from 305 ARPs were analyzed for total arsenic concentration. Forty-eight ARPs were installed despite raw water arsenic concentrations below the Indian standard (50 µg/L) and in 22 cases even below the WHO guideline value (10 µg/L). Among the 264 ARPs having raw water arsenic above 50 µg/L, 140 (53.1%) and 73 (27.7%) failed to remove arsenic below the WHO guideline value and Indian standard, respectively. The highest arsenic concentration in treated water was 705 µg/L. Analysis of 217 treated water samples for iron showed that 175 (80.6%) failed to remove iron below 300 µg/L. The treated water became coloured on standing 6 to 8 h, for 191 (44.2%) ARPs and 25 (5.8%) produced bad-odoured water. Overall, the study showed that 475 (82.3%) of the ARPs were not useful. The reasons for ineffectiveness and poor performance of these ARPs include improper maintenance, sand gushing problems, a lack of user-friendliness and absence of community participation. A comparative study of ARPs in two different blocks (Domkol in Murshidabad district and Swarupnagar in North 24 Parganas) showed that 39 (80%) and 38 (95%) ARPs, respectively, were not useful. Further study in Gram Panchayet Kolsur, Deganga block, North 24 Parganas, showed that 14 (87.5%) ARPs were not useful. Proper watershed management with active participation from the villagers is urgently required for successful mitigation.
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Rong, Hua, Hou Shugui, Li Yuansheng, Pang Hongxi, Paul Mayewski, Sharon Sneed, An Chunlei, and Michael Handley. "Arsenic record from a 3 m snow pit at Dome Argus, Antarctica." Antarctic Science 28, no. 4 (March 18, 2016): 305–12. http://dx.doi.org/10.1017/s0954102016000092.

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AbstractThis study presents an arsenic concentration time series from 1964–2009 at Dome Argus, Antarctica. The data show a very large increase in arsenic concentration from the mid-1980s to the late-1990s (by a factor of~22) compared with the values before the mid-1980s. This increase is likely to be related to the increased copper smelting in South America. Arsenic concentration then decreased in the late-1990s, most probably as a result of environmental regulations in South America. The sudden increase in arsenic concentration observed at Dome Argus coincides with similar increases observed at Dome Fuji and in Antarctica Ice Core-6 (IC-6) at the same time, suggesting that arsenic pollution during the period from the mid-1980s to the late-1990s was a regional phenomenon in Antarctica. Investigations of arsenic concentrations at these three Antarctic locations show that, during this time, regional arsenic distribution followed dust transport pathways associated with general climate models with South America as a major source region for the half of Antarctica facing the Atlantic and Indian oceans.
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Islam, M. N., B. K. Das, and M. E. Huque. "Arsenic Accumulation in Common Vegetables from Irrigation." Journal of Scientific Research 4, no. 3 (August 29, 2012): 675–88. http://dx.doi.org/10.3329/jsr.v4i3.10494.

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Arsenic-accumulation pattern in eight types of vegetables commonly found in Bangladesh were studied using successive irrigation/harvesting technique. The study also included to find the threshold amount of arsenic that leads to exceed the maximum permissible limit (MPL) in those vegetables and several water-soil-plant arsenic concentration models. Total arsenic concentrations were measured by Hydride Generation–Atomic Absorption Spectroscopy (HG-AAS) technique. Arsenic-accumulation decreased in the order: Arum > Arum leaf > Amaranth > Brinjal > Radish > Indian Spinach > Carrot > Okra. A single harvesting of 10 irrigations with water (3.0 L/irrigation) having arsenic concentrations of ?0.45 mg L-1 to 0.071 m2 area (equivalent to 1.89 kg As ha-1) exceeded the MPL in vegetables (1 mg kg-1, wet weight). The concentration of accumulated arsenic in the vegetables increased linearly with time and exponentially with successive harvesting. Regression analyses showed that arsenic concentration in vegetables was positively correlated with that of irrigation water and soil (r = 0.796 for both cases).© 2012 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved.doi: http://dx.doi.org/10.3329/jsr.v4i3.10494 J. Sci. Res. 4 (3), 675-688 (2012)
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Pal, Dilip K., Akash Agrawal, Sabnam Ghosh, and Amlan Ghosh. "Association of arsenic with recurrence of urinary bladder cancer." Tropical Doctor 50, no. 4 (June 9, 2020): 325–30. http://dx.doi.org/10.1177/0049475520930155.

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Arsenic is known to be an important aetiological factor for the development of urinary bladder cancer. It is known to be found excessively in ground water in certain geographical areas, including West Bengal. We have studied patients with recurrent bladder cancer from different areas of this Indian state and correlated arsenic as a causative aetiological factor for development and aggressiveness of the biological behaviour of urinary cancer. We included 31 patients from various parts of West Bengal state with recurrent bladder cancer who were operated in our institute. Their clinical and residential data and their arsenic content of tumour tissue were measured. Statistical analysis was performed to test the association of tissue arsenic with clinicopathological features of recurrent disease. We found very high levels of arsenic in tumour tissue in all residents of the districts with high prevalence of arsenic in the drinking water. We also observed more aggressive clinicopathological progression and early recurrence in patients with high arsenic content. We conclude that arsenic is a causal factor in the clinicopathological progression of recurrent urinary bladder cancer. Measures to decrease the level of arsenic in drinking water should be taken as this may both improve clinicopathological outcomes in the recurrence of urinary bladder carcinoma, as well as reducing its overall incidence.
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Kumar, Munesh, Rajesh Thakur, and Sandeep Kumar. "Comparative Efficacy of Syzygium Cumini Seed Extracts in Alleviating Arsenic-Induced Hepatotoxicity and Blood Cell Genotoxicity in Wistar Albino Rats." Biomedical & Pharmacology Journal 12, no. 3 (September 12, 2019): 1329–38. http://dx.doi.org/10.13005/bpj/1761.

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Syzygium cumini is well known for its medicinal values in the indigenous Indian system of medicine. This study was designed to evaluate the protective effect of methanolic (SCM), ethanolic (SCE) and aqueous (SCA) extracts of Syzygium cumini seeds on arsenic-induced blood cell genotoxicity and hepatotoxicity in Wistar albino rats. Rats were divided into five groups: (1) control, (2) arsenic, (3) SCM, (4) SCE and (5) SCA. After completion of 60 days treatment period, comet assays were performed on isolated blood lymphocytes and serum marker assays indicative of hepatic toxicity were carried out. Arsenic exposed rats expressed significantly higher DNA damage in their lymphocytes than the unexposed rats. Increased activities of serum alkaline phosphatase (ALP), aspartate aminotransferase (AST), and alanine aminotransferase (ALT), and decreased levels of total proteins were observed in arsenic exposed rats. Simultaneous administration of Syzygium cumini seed extracts significantly decreased the arsenic-induced DNA damage and hepatotoxicity. The amelioration of arsenic toxicity was more pronounced with methanolic extract compared to ethanolic and aqueous extracts of Syzygium cumini seeds.
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Valappil, Ashraf V., and Abraham Mammen. "Subacute Arsenic Neuropathy: Clinical and Electrophysiological Observations." Journal of Neurosciences in Rural Practice 10, no. 03 (July 2019): 529–32. http://dx.doi.org/10.1055/s-0039-1695693.

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AbstractWe report a patient who developed subacute peripheral neuropathy following ingestion of a traditional medicine for obesity. A 9-year-old girl who had a residual equinus varus deformity and sphincter disturbance due to pelvic ganglioneuroma presented with subacute sensorimotor peripheral neuropathy of 2 weeks duration. Her symptoms started 3 weeks after she started taking a locally made traditional medicine for obesity. She had no other systemic features of arsenic toxicity. She had Mee's lines on her nails and high serum arsenic levels and 24-hour urine levels confirmed the diagnosis of arsenic neuropathy. Nerve conduction study on admission demonstrated axonal sensorimotor neuropathy with slowed conduction velocity. She was not given any specific treatment and recovery was slow. At 18 months, she showed complete recovery and electrodiagnostic parameters returned to normal values. Arsenic is a known ingredient of many Indian ethnic remedies and possibility of arsenic neuropathy should be thought of in patients presenting with acute or sub-acute peripheral neuropathy of unknown etiology.
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Dissertations / Theses on the topic "Arsenid inditý"

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Stanislav, Silvestr. "Příprava nízkodimenzionálních III-V polovodičů." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2021. http://www.nusl.cz/ntk/nusl-443735.

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Tato diplomová práce se zabývá přípravou nanostruktur z indium arsenidu (InAs) pomocí metody molekulární svazkové epitaxe (MBE). Důraz je kladen na výrobu struktur ve formě nanodrátů na křemíkovém substrátu. V úvodní části práce je popsána motivace pro studium III-V polovodičů a konkrétně InAs. Následující kapitoly vysvětlují dva základní princpy tvorby nanodrátů. Experimentální část práce diskutuje možnost přípravy indiového katalyzátoru pro samokatalyzovaný růst InAs nanodrátů v konkrétní aparatuře MBE. Následuje prezentace výsledků růstu InAs nanodrátů mechanismem selektivní epitaxe (SAE). Nanodráty byly vyrobeny na substrátu s termálně dekomponovaným oxidem a rovněž na substrátech s litograficky připravenou oxidovou maskou.
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Johns, Steven 1964. "Room-temperature carrier lifetimes and optical nonlinearities of gallium-indium-arsenide/aluminum-indium-arsenide and gallium-aluminum-indium-arsenide/aluminum-indium-arsenide MQW devices at 1.3μm." Thesis, The University of Arizona, 1991. http://hdl.handle.net/10150/277949.

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The room-temperature nonlinear absorption spectra of a GaInAs/AlInAs and a GaAlInAs/AlInAs multiple quantum well (MQW) were measured near 1.3 μm using a pump-probe technique. Saturation carrier densities at the heavy-hole exciton peak were determined to be 1.2 x 10¹⁸ and 1.0 x 10¹⁸ cm⁻³ with carrier lifetimes of ≃ 2.3 ns and ≃ 750 ps for the two samples, respectively. Fabry-Perot etalons with integrated mirrors grown by molecular beam epitaxy (MBE) with GaInAs/AlInAs MQWs as spacer layers were also fabricated as optical switching devices. A 175 ps recovery time was measured for the etalon at room temperature.
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Shah, Syed Hassan. "Study of nonlinear optical properties of indium arsenide/gallium arsenide and indium gallium arsenide/gallium arsenide self-assembled quantum dots." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 97 p, 2008. http://proquest.umi.com/pqdweb?did=1460350251&sid=5&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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Guo, Wei. "Growth of highly ordered indium arsenide/gallium arsenide and indium gallium arsenide/gallium arsenide quantum dots on nano-patterned substrates by MBE." View abstract/electronic edition; access limited to Brown University users, 2008. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3318323.

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Noori, Atif M. "Metamorphic materials for indium arsenide transistors." Diss., Restricted to subscribing institutions, 2006. http://proquest.umi.com/pqdweb?did=1276402841&sid=1&Fmt=2&clientId=1564&RQT=309&VName=PQD.

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Pon, Russell Michael. "Optical properties of gallium arsenide/aluminum gallium arsenide and gallium aluminum indium arsenide/indium aluminum arsenide multiple quantum well and superlattice structures grown by molecular beam epitaxy." Diss., The University of Arizona, 1991. http://hdl.handle.net/10150/185370.

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Gain spectra are characterized as a function of the well-width in GaAs multiple quantum wells with AlGaAs barriers by nanosecond pump-probe spectroscopy. The gain bandwidth is larger for the same peak gain in wider well-width multiple quantum wells and is explained qualitatively. The Iinewidth broadening factor is calculated from the gain spectra and studied as a material parameter. It is shown that the linewidth broadening factor increases with wavelength and decreases with carrier density. MBE-grown integrated-mirror etalons made from GaAs/AlGaAs. in the 800 nm wavelength region. and GaAllnAs/InAlAs. in the 1.3 μm wavelength region. exhibit lasing by optical pumping. Below threshold. the 800 nm integrated-mirror etalon is used for nonlinear switching which. in the architecture presented. is capable of extracting a single 10 ps pulse from a pair of pulses spaced 40 ps apart. Nonlinear optical properties of type II GaAs/AlAs short-period superlattices are presented and show an apparent high energy shift of the absorption band edge at 10K and no shift at 77 K as the absorption is saturated. Type I multiple quantum well structures of similar dimensions show similar high energy band edge shifts for both temperatures. 10K and 77 K due to phase-space filling. In contrast. electrons in type II structures reside in the barrier and do not contribute to the chemical potential. Transitions in GaAs/AlGaAs coupled-well superlattices show transitions that are a function of the center barrier thickness and reveal shorter carrier lifetimes than a GaAs quantum well of equal thickness without a center barrier.
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Pancholi, Anup. "(Indium,gallium)arsenide quantum dot materials for solar cell applications effect of strain-reducing and strain-compensated barriers on quantum dot structural and optical properties /." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 172 p, 2009. http://proquest.umi.com/pqdweb?did=1654501701&sid=2&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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Thesis (Ph.D.)--University of Delaware, 2008.
Principal faculty advisors: Valeria Gabriela Stoleru, Dept. of Materials Science & Engineering; and S. Ismat Shah, Dept. of Materials Science. Includes bibliographical references.
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Martinez, Marino Juan. "Evaluation of gallium arsenic(x) antimony(1-x)/indium(y) aluminum(1-y) arsenicp-channel HIGFETs for complementary technologies." Diss., The University of Arizona, 1993. http://hdl.handle.net/10150/186496.

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This work shows the viability of p-channel GaAsₓSb₁₋ₓ/In(y)Al(1-y)As HIGFETs for III-V compound-based complementary technologies to compete with silicon CMOS for specialized applications. Monte Carlo simulation was used to establish that even for the most extreme cases of alloy scattering GaAsₓSb₁₋ₓ on InP has a higher bulk hole mobility than GaAs. Process development demonstrated that H₂O:H₂O₂:H₃PO₄:L-tartaric acid-based etchant solutions provide a reliable etchant with a selectivity of approximately 2:1 of GaAsₓSb₁₋ₓ over In(y)Al(1-y)As. Process development also showed that Ti/Au was the most reliable gate metal for contact to In(y)Al(1-y)As and that care must be taken to avoid letting some common chemical solutions come into contact with GaAsₓSb₁₋ₓ. Experimental devices established that lattice-matched GaAsₓSb₁₋ₓ channel layers had low gate leakage currents, but had otherwise poor performance. However, experimental devices with strained GaSb-rich GaAsₓSb₁₋ₓ channels had the lowest recorded gate leakage current for a heterostructure FET yielding a gate turn-on voltage of -3 V and also had transconductance and current drive comparable to the best p-channel HIGFETs of any material systems to date. Finally, SPICE simulations showed that if integrated with n-channel HIGFETs with comparable gate leakage and moderate performance, modestly improved p-channel devices make possible technology with approximately half the delay time of similar CMOS circuits. Although silicon CMOS has enormous advantages over complementary HFETs in terms of robustness and yield which allow very high densities of integration, this work clearly establishes that this infant technology has the capability to challenge the more established CMOS on the basis of speed and power consumption.
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Hsu, Chia Chen. "The nonlinear optical properties of KTP, 4BCMU, and gallium indium arsenide/aluminum indium arsenide multiple quantum well." Diss., The University of Arizona, 1991. http://hdl.handle.net/10150/185611.

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In this dissertation different nonlinear materials for applications in frequency generation and nonlinear optical switching devices are investigated. The important aspects for efficient frequency generation in a three-wave mixing interaction are introduced. Blue laser light generation by sum frequency mixing in a KTP crystal and the production of tunable infrared in a LiIO₃ crystal by difference frequency mixing are demonstrated. The third-order optical nonlinear susceptibities of single-crystaline and spin-coated amorphous P-4BCMU thin films are measured by third harmonic generation. The effects of polymer orientation and multiphoton enhancement are discussed. A novel investigation of the room-temperature optical nonlinearities and recovery time of GaInAs/AlInAs and GaAlInAs/AlInAs MQWs at 1.3 μm are presented. Fabry-Perot etalons with integrated mirrors grown by molecular beam epitaxy with GaInAs/AlInAs MQWs as spacer layers are fabricated as optical logic gate devices. The recovery time of the etalon switching device is measured.
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Krol, Mark Francis. "Ultrafast carrier dynamics and enhanced electroabsorption in (gallium,indium)arsenide/(aluminum,indium)arsenide asymmetric double quantum well structures." Diss., The University of Arizona, 1995. http://hdl.handle.net/10150/187240.

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An experimental study, utilizing a novel nondegenerate transmission pump/probe technique, of ultrafast electron and hole tunneling in (Ga,In)As/Al,In)As asymmetric double quantum wells (ADQWs) is presented. A single time constant is observed at low carrier densities indicating the holes tunnel from the narrow well (NW) to the wide well (WW) at least as fast as electrons. At high carrier densities a two component decay is observed, consistent with phase-space filling and space-charge effects blocking tunneling carriers. The fast transfer of electrons was confirmed to be a LO-phonon assisted process. A detailed theoretical study of ultrafast hole tunneling at low carrier densities indicates that in ternary materials alloy disorder is responsible for fast hole transfer between the wells. Enhanced electroabsorption in selectively doped (Ga,In)As/(Al,In)As ADQWs by the use of real space electron transfer is demonstrated. The electron concentration in both the WW and NW is investigated by field-dependent absorption and photoluminescence spectroscopy. The results are compared to absorption changes in an undoped ADQW structure which utilizes the quantum confined Stark effect. The doped modulator exhibits a significantly larger red-shift with applied field than the undoped structure.
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Books on the topic "Arsenid inditý"

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Huber, Dieter. InP/InGaAs single hetero-junction bipolar transistors for integrated photoreceivers operating at 40 Gb/s and beyond. Konstanz: Hartung-Gorre, 2002.

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Adachi, Sadao. Physical properties of III-V semiconductor compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP. New York: Wiley, 1992.

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Mohanty, Deba R. Arming the Indian arsenal: Challenges and policy options. New Delhi: Rupa & Co. in association with Observer Research Foundation, 2009.

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Foundation, Observer Research, ed. Arming the Indian arsenal: Challenges and policy options. New Delhi: Rupa & Co. in association with Observer Research Foundation, 2009.

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Chris, Smith. India's ad hoc arsenal: Arms procurement in historical perspective. Oxford: Oxford University Press, 1994.

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Prozessverständnis einer Naturkatastrophe: Eine geo- und hydrochemische Untersuchung der regionalen Arsen-Anreicherung im Grundwasser West-Bengalens (Indien). Karlsruhe: Universitätsverlag, 2005.

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Biswas, Ayan. A Framework for Rural Drinking Water Quality Management (WQM): Collating Experiences from the Voluntary Sector. Edited by Rima Kashyap. Bangalore, India: Arghyam, 2012.

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Huber, Alex. Noise characterization and modeling of InP/InGaAs HBTs for RF circuit design. Konstanz: Hartung-Gorre, 2000.

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Blaser, Markus. Monolithically integrated InGaAs/Inp photodiode-junction field-effect transistor receivers for fiber-optic telecommunication. Konstanz: Hartung-Gorre, 1997.

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Adachi, Sadao. Physical Properties of III-V Semiconductor Compounds: InP, Inas, Gaas, GaP, InGaAs and InGaAsP. Wiley & Sons, Limited, John, 2005.

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Book chapters on the topic "Arsenid inditý"

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Adachi, Sadao. "Indium Arsenide (InAs)." In Optical Constants of Crystalline and Amorphous Semiconductors, 257–67. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4615-5247-5_26.

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Predel, B. "As-In (Arsenic - Indium)." In Ac-Ag ... Au-Zr, 1–2. Berlin, Heidelberg: Springer Berlin Heidelberg, 2006. http://dx.doi.org/10.1007/10793176_179.

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Feenstra, R. M., and S. W. Hla. "2.3.11 InAs, Indium Arsenide." In Physics of Solid Surfaces, 58–59. Berlin, Heidelberg: Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-662-47736-6_28.

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Chowdhury, T. R., B. Kr Mandal, G. Samanta, G. Kr Basu, P. P. Chowdhury, C. R. Chanda, N. Kr Karan, et al. "Arsenic in groundwater in six districts of West Bengal, India: the biggest arsenic calamity in the world: the status report up to August, 1995." In Arsenic, 93–111. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5864-0_9.

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Adachi, Sadao. "a-Indium Arsenide (a-lnAs)." In Optical Constants of Crystalline and Amorphous Semiconductors, 707–10. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4615-5247-5_70.

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Shukla, Anurakti, Surabhi Awasthi, Reshu Chauhan, and Sudhakar Srivastava. "The Status of Arsenic Contamination in India." In Arsenic in Drinking Water and Food, 1–12. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-8587-2_1.

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Singh, Nandita, and Om Prakash Singh. "Sustainable Arsenic Mitigation: Problems and Prospects in India." In Advances in Water Security, 131–56. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-21258-2_6.

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Saravanakumar, R. "III–V Heterostructure Devices for High-Frequency Applications." In Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications, 31–44. Boca Raton: CRC Press, 2021. http://dx.doi.org/10.1201/9781003093428-3.

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Vamsidhar, Y. "Influence of Dual Channel and Drain-Side Recess Length in Double-Gate InAs HEMTs." In Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications, 101–16. Boca Raton: CRC Press, 2021. http://dx.doi.org/10.1201/9781003093428-9.

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Godwinraj, D. "III–V Heterostructure Devices for Ultralow-Power, High-Power, and High-Breakdown Applications." In Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications, 13–30. Boca Raton: CRC Press, 2021. http://dx.doi.org/10.1201/9781003093428-2.

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Conference papers on the topic "Arsenid inditý"

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Магомадов, Р. М., and Р. Р. Юшаев. "INFLUENCE OF THE SEMICONDUCTOR CONDUCTIVITY ON THE VALUE OF THE SCHOTTKY BARRIER." In «АКТУАЛЬНЫЕ ВОПРОСЫ СОВРЕМЕННОЙ НАУКИ: ТЕОРИЯ, ТЕХНОЛОГИЯ, МЕТОДОЛОГИЯ И ПРАКТИКА». Международная научно-практическая онлайн-конференция, приуроченная к 60-ти летию член-корреспондента Академии наук ЧР, доктора технических наук, профессора Сайд-Альви Юсуповича Муртазаева. Crossref, 2021. http://dx.doi.org/10.34708/gstou.conf..2021.20.82.001.

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В данной работе исследовано влияние проводимости полупроводника на Барьер Шотки в контакте металл полупроводник. В качестве объектов исследования выбраны контакты с алюминием следующих полупроводников: арсенида индия(InAs), арсенида галлия (GaAs)антимонида индия(InSb) и сульфида кадмия(CdS). Выбор этих кристаллов связан с тем, что ширина запрещенной зоны этих полупроводников возрастает от Еg = 0,18 эВ у арсенида индия до Еg = 2,53 эВ у сульфида кадмия, что соответствует поставленной задаче в данной работе. In this paper, the influence of the conductivity of a semiconductor on the Schottky Barrier in the metal-semiconductor contact is investigated. Contacts with aluminum of the following semiconductors were selected as objects of research: indium arsenide(InAs), gallium arsenide (GaAs), indium antimonide(InSb), and cadmium sulfide(CDs). The choice of these crystals is due to the fact that the band gap of these semiconductors increases from U = 0.18 eV for indium arsenide to U =eV for cadmium sulfide, which corresponds to the task in this paper.
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Chao, Paul C. P., Jian-Ruei Chen, Che-Hung Tsai, and Wei-Dar Chen. "Design and Realization of High Resolution (640×480) SWIR Image Acquisition System." In ASME 2013 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/isps2013-2917.

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Imaging technology has been in revolutionary progresses in decades with well-developed semiconductor and memory industries. Silicon sensors are used in most of camera and DV, since silicon is the best material for visible light imaging (wavelength from 400nm∼700nm). Short wave infrared (SWIR) requires indium gallium arsenide (InGaAs), composed of chemical compounds including indium arsenide (InAs) and gallium arsenide (GaAs), to cover SWIR spectrum. Wavelength of typical SWIR is defined between 0.7um and 2.5um; SWIR cameras focus on wavelength between 0.9um∼1.7um (In0.53Ga0.47As). Unlike Mid-Wave IR and Long-Wave IR, SWIR is reflected and absorbed by objects, which advantages SWIR imaging higher resolution due to better contrast. SWIR also has excellent imaging quality in low illumination environment and moon light or star light are good emitters outdoor at night. Another primary characteristic of SWIR is high penetration, providing effective imaging under hazy conditions. An Example for night vision between SWIR.
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Saurova, Tetiana, and Victoria Bors. "Scattering Mechanisms in Arsenide Indium." In 2019 IEEE 39th International Conference on Electronics and Nanotechnology (ELNANO). IEEE, 2019. http://dx.doi.org/10.1109/elnano.2019.8783663.

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Lyamkina, Anna A., Dmitriy V. Dmitriev, Sergey P. Moshchenko, and Alexander I. Toropov. "Kinetics of indium arsenide quantum dots formation on gallium arsenide (001) substrate." In 2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices (EDM). IEEE, 2009. http://dx.doi.org/10.1109/edm.2009.5173921.

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Mellor, P. J. T., and J. Herniman. "Barrier Ohmic Contacts To Indium Gallium Arsenide." In 1st Intl Conf on Idium Phosphide and Related Materials for Advanced Electronic and Optical Devices, edited by Louis J. Messick and Rajendra Singh. SPIE, 1989. http://dx.doi.org/10.1117/12.962020.

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Cohen, Marshall J., Robert M. Brubaker, J. Christopher Dries, and Martin H. Ettenberg. "Indium gallium arsenide photodiode arrays for optical communications." In ITCom 2001: International Symposium on the Convergence of IT and Communications, edited by Robert Raymond, Pradip K. Srimani, Renjeng Su, and Carl W. Wilmsen. SPIE, 2001. http://dx.doi.org/10.1117/12.448010.

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Lyamkina, Anna A., Dmitriy V. Dmitriev, Sergey P. Moshchenko, Yuri G. Galitsyn, and Alexander I. Toropov. "Elastic strain driven change of growth mode in indium arsenide heteroepitaxy on (001) gallium arsenide." In 2009 International Student School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies (INTERNANO). IEEE, 2009. http://dx.doi.org/10.1109/internano.2009.5335644.

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Votsi, H., B. Mirkhaydarov, S. Gillespie, P. Young, M. Shkunov, and P. H. Aaen. "Modelling of Solution Processed Indium Arsenide Nanowire Microwave Switches." In 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018. IEEE, 2018. http://dx.doi.org/10.1109/mwsym.2018.8439648.

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Greiner, Mark E., and Charles J. Martin. "Indium Arsenide Photovoltaic Detectors, Advances in Fabrication and Performance." In 30th Annual Technical Symposium, edited by Hideyoshi Nakamura. SPIE, 1986. http://dx.doi.org/10.1117/12.936523.

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Berg, Martin, Karl-Magnus Persson, Erik Lind, Henrik Sjoland, and Lars-Erik Wernersson. "Single balanced down-conversion mixer utilizing indium arsenide nanowire MOSFETs." In 2014 26th International Conference on Indium Phosphide and Related Materials (IPRM). IEEE, 2014. http://dx.doi.org/10.1109/iciprm.2014.6880569.

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Reports on the topic "Arsenid inditý"

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Wells, Richard L., Colin G. Pitt, Andrew T. McPhail, Andrew P. Purdy, Soheila Shafieezad, and R. B. Hallock. The Use of Tris(trimethylsilyl)arsine to Prepare Gallium Arsenide and Indium Arsenide. Fort Belvoir, VA: Defense Technical Information Center, October 1988. http://dx.doi.org/10.21236/ada200887.

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Olsen, Gregory H., and Marshall J. Cohen. An Indium Gallium Arsenide Charge-Coupled Device (CCD) for 1-3 micron Imaging. Fort Belvoir, VA: Defense Technical Information Center, May 1993. http://dx.doi.org/10.21236/ada266134.

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Chiu, David Y., and Troy Alexander. Development of an Indium Gallium Arsenide (InGaAs) Short Wave Infrared (SWIR) Line Scan Imaging System. Fort Belvoir, VA: Defense Technical Information Center, September 2011. http://dx.doi.org/10.21236/ada549860.

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Delaire, Caroline. Improving Access to Safe Water in West Bengal, India: From Arsenic and Bacteria Removal to Household Behavior Change. Office of Scientific and Technical Information (OSTI), May 2016. http://dx.doi.org/10.2172/1481915.

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Sengupta, S., A. Rencz, G. Hall, T. Pal, P. Mukherjee, and R. Beckie. Report of activities 2003-2005: Development of a mitigation strategy to manage risk from arsenic toxicity in groundwater of West Bengal, India. Phase 1: naturally occurring arsenic in groundwater: a preliminary investigation of sources and release mechanisms, Gotra, West Bengal, India. Natural Resources Canada/ESS/Scientific and Technical Publishing Services, 2007. http://dx.doi.org/10.4095/224376.

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Wells, R. L., L. J. Jones, A. T. McPhail, and A. Alvanipour. Synthesis and Characterization of Indium-Arsenic Compounds Containing a Four-Membered In-Ad-In-As or In-As-In-Cl Ring: Crystal Structures of ((Me3SiCH2) 2InAs(SiMe3)2)2 and (Me3SiCH2)2InAs(SiMe3)2In(CH2SiMe3)2Cl. Fort Belvoir, VA: Defense Technical Information Center, February 1991. http://dx.doi.org/10.21236/ada232368.

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Source, occurrence, and extent of arsenic in the Grass Mountain area of the Rosebud Indian Reservation, South Dakota. US Geological Survey, 1997. http://dx.doi.org/10.3133/wri974286.

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