Relevant bibliographies by topics / Anti-ferromagnetic Insulator

Academic literature on the topic 'Anti-ferromagnetic Insulator'

Author: Grafiati
Published: 7 September 2023

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Journal articles on the topic "Anti-ferromagnetic Insulator"

1

Zhang, Min, Qiya Liu, Ligang Liu, and Tixian Zeng. "Proximity-Induced Magnetism in a Topological Insulator/Half-Metallic Ferromagnetic Thin Film Heterostructure." Coatings 12, no. 6 (May 31, 2022): 750. http://dx.doi.org/10.3390/coatings12060750.

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Topological insulator (TI) Bi2Se3 thin films were prepared on half-metallic ferromagnetic La0.7Sr0.3MnO3 thin film by magnetron sputtering, forming a TI/FM heterostructure. The conductivity of Bi2Se3was modified by La0.7Sr0.3MnO3 at high- and low-temperature regions via different mechanisms, which could be explained by the short-range interactions and long-range interaction between ferromagnetic insulator and Bi2Se3 due to the proximity effect. Magnetic and transport measurements prove that the ferromagnetic phase and extra magnetic moment are induced in Bi2Se3 films. The weak anti-localized (WAL) effect was suppressed in Bi2Se3 films, accounting for the magnetism of La0.7Sr0.3MnO3 layers. This work clarifies the special behavior in Bi2Se3/La0.7Sr0.3MnO3 heterojunctions, which provides an effective way to study the magnetic proximity effect of the ferromagnetic phase in topological insulators.
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2

Mahfouzi, Farzad, and Nicholas Kioussis. "Ferromagnetic Damping/Anti-damping in a Periodic 2D Helical Surface; A Nonequilibrium Keldysh Green Function Approach." SPIN 06, no. 02 (June 2016): 1640009. http://dx.doi.org/10.1142/s2010324716400099.

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In this paper, we investigate theoretically the spin–orbit torque (SOT) as well as the Gilbert damping for a two band model of a 2D helical surface state with a ferromagnetic (FM) exchange coupling. We decompose the density matrix into the Fermi sea and Fermi surface components and obtain their contributions to the electronic transport as well as the SOT. Furthermore, we obtain the expression for the Gilbert damping due to the surface state of a 3D topological insulator (TI) and predict its dependence on the direction of the magnetization precession axis.
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3

Zhang, J., K. Zhao, X. S. Yang, and Y. Zhao. "Study of magnetic and transport properties of Bi2Se3/FeSe2 bilayer thin films." International Journal of Modern Physics B 35, no. 02 (January 12, 2021): 2150022. http://dx.doi.org/10.1142/s0217979221500223.

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Thin films of topological insulator (TI) Bi2Se3 were grown onto the surfaces of FeSe2 layers of different thicknesses on Si (100) substrates by magnetron sputtering, forming bilayer films with smooth surface. Magnetic and transport measurements indicate ferromagnetism in these bilayer samples. Large coercive fields at low-temperatures and a room-temperature magnetic order were observed. Moreover, nonsaturated high-filed linear magnetoresistance (MR) and weak anti-localization effect were found in these bilayer thin films. These results indicate that the bilayer samples could have both strong spin–orbit coupling and ferromagnetic proximity effect, which are the desired features.
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4

Sumi, Satoshi, Yuichiro Hirano, Hiroyuki Awano, and Junji Tominaga. "Ferromagnetic Resonance of a [GeTe/Sb2Te3]6/Py Superlattice." Magnetochemistry 7, no. 12 (November 26, 2021): 156. http://dx.doi.org/10.3390/magnetochemistry7120156.

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A [GeTe/Sb2Te3] superlattice is known as a topological insulator. It shows magnetic responses such as magneto-optical effect, magneto resistance, magneto capacitance, and so on. We have reported that [GeTe/Sb2Te3] superlattice film has a large spin–orbit interaction using a spin pumping method of a [GeTe/Sb2Te3]/Py superlattice. In this paper, we demonstrate a ST-FMR (spin transfer torque ferromagnetic resonance) of the [GeTe/Sb2Te3]6/Py superlattice, compared with a W/Py bilayer. The superlattice film showed a large resonance signal with a symmetric component. The ratio of symmetric components (S) to anti-symmetric (A) components (S/A) was 1.4, which suggests that the superlattice exhibits a large spin Hall angle. The [GeTe/Sb2Te3] superlattice will be suitable as a hetero-interface material required for high performance spintronics devices in future.
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5

Yokota, Takeshi, Takaaki Kuribayashi, Takeshi Shundo, Keita Hattori, Yasutoshi Sakakibara, and Manabu Gomi. "Magnetic and Dielectric Properties of a Metal/ Cr2O3/Cr2O3-x/Cr2O3/Semiconductor Capacitor Using Magneto-Electric Materials." Key Engineering Materials 350 (October 2007): 221–24. http://dx.doi.org/10.4028/www.scientific.net/kem.350.221.

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We investigated the magnetic and dielectric properties of a metal (Pt)/insulator (Cr2O3)/semiconductor (Si) (MIS) capacitor composed of magneto-electric (ME) materials. The capacitor has anti-ferromagnetic properties and a very small electrically induced magnetic moment. It also shows capacitance-voltage (C-V) properties typical of a Si-MIS capacitor without any hysteresis. By inserting a thin Cr2O3-x layer, the C-V curve has a hysteresis window with a clockwise trace, which indicates that electrons have been injected into the Cr2O3-x layer. These results indicate that this MIS capacitor contains a floating gate and an ME insulating layer in a single system.
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6

Xie, Hangkai, Fucong Fei, Fenzhen Fang, Bo Chen, Jingwen Guo, Yu Du, Wuyi Qi, et al. "Charge carrier mediation and ferromagnetism induced in MnBi6Te10 magnetic topological insulators by antimony doping." Journal of Physics D: Applied Physics 55, no. 10 (December 6, 2021): 104002. http://dx.doi.org/10.1088/1361-6463/ac3790.

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Abstract A new kind of intrinsic magnetic topological insulator (MTI) MnBi2Te4 family has shed light on the observation of novel topological quantum effects such as the quantum anomalous Hall effect (QAHE). However, strong anti-ferromagnetic (AFM) coupling and high carrier concentration in the bulk hinder practical applications. In closely related materials MnBi4Te7 and MnBi6Te10, the interlayer magnetic coupling is greatly suppressed by Bi2Te3 layer intercalation. However, AFM is still the ground state in these compounds. Here, by magnetic and transport measurements, we demonstrate that a Sb substitutional dopant plays a dual role in MnBi6Te10, which can not only adjust the charge carrier type and concentration, but also induces the solid into a ferromagnetic (FM) ground state. The AFM ground state region, which is also close to the charge neutral point, can be found in the phase diagram of Mn(Sb x Bi1−x )6Te10 when x ∼ 0.25. An intrinsic FM-MTI candidate is thus demonstrated, which may take us a step closer to realizing a high-quality and high-temperature QAHE and related topological quantum effects in the future.
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7

Majumder, Supriyo, Malvika Tripathi, I. Píš, S. Nappini, P. Rajput, S. N. Jha, R. J. Choudhary, and D. M. Phase. "Robust electronic and tunable magnetic states in Sm2 NiMnO6 ferromagnetic insulator." Journal of Physics: Condensed Matter 34, no. 25 (April 20, 2022): 255502. http://dx.doi.org/10.1088/1361-648x/ac62a4.

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Abstract Ferromagnetic insulators (FM-Is) are the materials of interest for the new generation quantum electronic applications. Here, we have investigated the physical observables depicting FM-I ground states in epitaxial Sm2NiMnO6 (SNMO) double perovskite thin films fabricated under different conditions to realize the different level of Ni/Mn anti-site disorders (ASDs). The presence of ASDs immensely influence the characteristic magnetic and anisotropy behaviors in SNMO system by introducing short scale antiferromagnetic interactions in predominant long range FM ordered host matrix. Charge disproportion between cation sites, in the form of Ni2+ + Mn4+ → Ni3+ + Mn3+, causes mixed valency in both Ni and Mn species, which is found insensitive to ASD concentrations. Temperature dependent photo emission, photo absorption measurements duly combined with cluster model configuration interaction simulations, suggest that the eigenstates of Ni and Mn cations can be satisfactorily described as a linear combination of the unscreened d n and screened d n + 1 L ̲ ( L ̲ : O 2p hole) states. The electronic structure across the Fermi level (E F) exhibits closely spaced Ni 3d, Mn 3d and O 2p states. From occupied and unoccupied bands, estimated values of the Coulomb repulsion energy (U) and ligand to metal charge transfer energy (Δ), indicate charge transfer insulating nature, where remarkable modification in Ni/Mn 3d—O 2p hybridization takes place across the FM transition temperature. Existence of ASD broadens the Ni, Mn 3d spectral features, whereas the spectral positions are found to be unaltered. Hereby, present work demonstrates SNMO thin film as a FM-I system, where the FM state can be tuned by manipulating ASD in the crystal structure, while the I state remains intact.
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8

Zawawi, Rabiatul Adawiyah, Nurul Nasuha Khairulzaman, Suhadir Shamsuddin, and Norazila Ibrahim. "Comparative Study on Structural, Electrical Transport and Magnetic Properties of Cr-Doped in Charge-Ordered Pr0.75Na0.25Mn1-Xcrxo3 and Nd0.75Na0.25Mn1-Ycryo3 Manganites." International Journal of Engineering & Technology 7, no. 4.30 (November 30, 2018): 76. http://dx.doi.org/10.14419/ijet.v7i4.30.22016.

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Cr doping in charge-ordered Pr0.75Na0.25Mn1-xCrxO3 and Nd0.75Na0.25Mn1-yCryO3 have been synthesized using conventional solid-state method to investigate its effect on structural, electrical transport and magnetic properties. X-ray diffraction (XRD) analysis for both compounds showed that the samples were crystallized in an orthorhombic structure with Pnma group. The unit cell volume value decrease as the Cr-doped increased indicating the possibility of Mn3+ ion was replaced by Cr3+ due to the different of ionic radius. The temperature dependence of electrical resistivity showed an insulating behavior down to the lower temperature the both parent compound (x = 0 and y = 0). Successive substitution of Cr at Mn-site in Pr0.75Na0.25Mn1-xCrxO3 manganites induced the metal-insulator (MI) transition temperature around TMI~120 K and TMI~122 K for x = 0.02 and x = 0.04 samples respectively suggestively due to the enhancement of double-exchange (DE) mechanism as a result of suppress the CO state. Analysis of resistivity data of dlnρ/dT-1 vs. T in Nd0.75Na0.25Mn1-yCryO3 manganite, showed a peak around 210 K and 160 K for y = 0 and 0.02 samples respectively while no peak was observed for y = 0.05 sample indicate the charge-ordered (CO) weakened. AC susceptibility, χ’ measurements in Pr0.75Na0.25Mn1-xCrxO3 exhibits paramagnetic to ferromagnetic-like with curie temperature, TC increases from 132 K for x = 0.02 to 141 K for x = 0.04 with Cr content indicate the suppression of CO state meanwhile in Nd0.75Na0.25Mn1-yCryO3 showed paramagnetic to anti-ferromagnetic transition as Neel temperature TN increases from 115 K for y = 0.02 to 125 K for y = 0.05.
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9

Htoon, Han. "(Invited) Opportunities and Challenges for Quantum Emitters in One and Two Dimensional Materials." ECS Meeting Abstracts MA2022-01, no. 9 (July 7, 2022): 736. http://dx.doi.org/10.1149/ma2022-019736mtgabs.

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The last five years have witnessed dramatic advances in realization of quantum emitters (QEs) in one dimensional carbon nanotubes and two dimensional layered semiconductors. These novel QEs offer exciting opportunities for not only storing, processing and transducing of quantum information but also sensing physical phenomena beyond classical detection limits. Realization of these opportunities also present multiple challenges including: (1) realizing room temperature, telecommunication wavelength operation; (2) controlling fundamental as well as quantum optical properties such as QE emission wavelengths, linewidths, polarization, coherent times, single photon purity and indistinguishability; (3) deterministic placement and integration of QEs into photonic, plasmonic, and mangnonic platforms for quantum sensing and transduction applications. Here in this talk I will present recent efforts toward meeting these challenges. In 1D carbon nanotubes, we recently demonstrated that chemical binding configuration of covalent quantum defects can be controlled through the spin multiplicity of photoexcited intermediates. This enable us to control the emission wavelength of QEs by creating previously inaccessible chemical configuration. In 2D semiconductor, we have successfully created the telecommunication wavelength quantum emitters by local strain engineering of MoTe2. We have also realized chiral quantum emitters via exploit of magnetic proximity interaction between quantum emitters of WSe2 monolayer and localized magnetization crated in NiPS3 anti-ferromagnetic insulator by nanoscale stain engineering.
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10

Itoi, Miho, Toshikazu Nakamura, and Yoshiya Uwatoko. "Pressure-Induced Superconductivity of the Quasi-One-Dimensional Organic Conductor (TMTTF)2TaF6." Materials 15, no. 13 (July 1, 2022): 4638. http://dx.doi.org/10.3390/ma15134638.

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We investigated the superconductivity of (TMTTF)2TaF6 (TMTTF: tetramethyl-tetrathiafulvalene) by conducting resistivity measurements under high pressure up to 8 GPa. A cubic anvil cell (CAC) pressure generator, which can produce hydrostatic high-pressure, was used for this study. Since the generalized temperature-pressure (T-P) diagram of (TMTCF)2X (C = Se, S, X: monovalent anion) based on (TMTTF)2PF6 (TCO = 70 K and spin-Peierls: SP, TSP = 15 K) was proposed by Jérome, exploring superconductivity states using high-pressure measurement beyond 4 GPa has been required to confirm the universality of the electron-correlation variation under pressure in (TMTTF)2X (TMTTF)2TaF6, which has the largest octahedral-symmetry counter anion TaF6 in the (TMTTF)2X series, possesses the highest charge-ordering (CO) transition temperature (TCO = 175 K) in (TMTTF)2X and demonstrates an anti-ferromagnetic transition (TAF = 9 K) at ambient pressure. A superconducting state in (TMTTF)2TaF6 emerged after a metal-insulator transition was suppressed with increasing external pressure. We discovered a superconducting state in 5 ≤ P ≤ 6 GPa from Tc = 2.1 K to 2.8 K, whose pressure range is one-third narrower than that of X = SbF6 (5.4 ≤ P ≤ 9 GPa). In addition, when the pressures with maximum SC temperatures are compared between the PF6 and the TaF6 salts, we found that (TMTTF)2TaF6 has a 0.75 GPa on the negative pressure side in the T-P phase diagram of (TMTTF)2PF6.
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