Journal articles: 'Annealing'

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Wzorek, Marek, Andrzej Czerwiński, Andrian V. Kuchuk, Jacek Ratajczak, Ania Piotrowska, and Jerzy Kątcki. "Ni-Based Ohmic Contacts to Silicon Carbide Examined by Electron Microscopy." Solid State Phenomena 186 (March 2012): 82–85. http://dx.doi.org/10.4028/www.scientific.net/ssp.186.82.

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Ni/Si multilayer contact structures to 4H-SiC after subsequent annealing steps are investigated with electron microscopy methods. After high temperature annealing step, specific defects in the contact structures are observed. The influence of phase transformations during annealings on the morphology on the contacts is discussed and the explanation of formation mechanism of voids within contact layer is proposed.

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Woo, Jong Soo, Chan-Hee Han, Byung-Deug Hong, and Jirou Harase. "Influence of the Secondary Recrystallization Temperature on the Sharpness of Goss Secondary Recrystallization Texture." Textures and Microstructures 32, no. 1-4 (January 1, 1999): 119–36. http://dx.doi.org/10.1155/tsm.32.119.

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Primary recrystallized Fe–3%Si specimens containing AI and nitrided were annealed intermittently with the heating rate of 15℃/h in 100% N2 atmosphere. The magnetic induction B8 was measured after each annealing. The onset of secondary recrystallization was detected by the rapid rise of B8. The maximum B8 obtained was about 1.94 T when the onset temperature of the secondary recrystallization was around 1075℃ regardless of the initial grain size or nitrogen content.The same primary specimens were coated with MgO and annealed with the same heating rate in 5% H2–N2. The maximum B8 obtained was nearly same as with the above annealing condition, however, the initial grain size and nitrogen content was quite contrary in this annealing. The difference in the optimum grain size and nitrogen content for obtaining the highest B8 between both annealings was explained on the assumption that ∑9 boundaries become most mobile at 1075℃ regardless of the annealing methods. Based on this finding, the possibility of producing grain oriented silicon steel without hot band annealing and nitriding treatment was shown.

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Khorasani, AmirMahyar, Ian Gibson, Moshe Goldberg, and Guy Littlefair. "On the role of different annealing heat treatments on mechanical properties and microstructure of selective laser melted and conventional wrought Ti-6Al-4V." Rapid Prototyping Journal 23, no. 2 (March 20, 2017): 295–304. http://dx.doi.org/10.1108/rpj-02-2016-0022.

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Purpose The purpose of this study was to conduct various heat treatments (HT) such as stress relief annealing, mill annealing, recrystallization (α + β) annealing and β annealing followed by furnace cooling (FC) that were implemented to determine the effect of these on mechanical properties and the microstructure of selective laser melted and wrought samples. The mentioned annealings have been carried out to achieve the related standards in the fabrication of surgery implants. Design/methodology/approach In this paper, based on F2924-14 ASTM standard SLM and conventionally wrought parts were prepared. Then HT was performed and different characteristics such as microstructure, mechanical properties, macro-hardness and fracture surface for selective laser melted and wrought parts were analysed. Findings The results show that the high cooling rate in selective laser melting (SLM) generates finer grains. Therefore, tensile strength and hardness increase along with a reduction in ductility was noticed. Recrystallization annealing appears to give the best combination of ductility, strength and hardness for selective laser melted parts, whilst for equivalent wrought samples, increasing HT temperature results in reduction of mechanical properties. Originality/value The contributions of this paper are discussing the effect of different annealing on mechanical properties and microstructural evolution based on new ASTM standards for selective laser melted samples and comparing them with wrought parts.

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Adawi Awdish, Rana Lee. "Annealing." International Journal of Whole Person Care 10, no. 2 (June 19, 2023): 6–9. http://dx.doi.org/10.26443/ijwpc.v10i2.383.

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Makogon, Yu N., O. P. Pavlova, Sergey I. Sidorenko, G. Beddies, and A. V. Mogilatenko. "Influence of Annealing Environment and Film Thickness on the Phase Formation in the Ti/Si(100) and (Ti +Si)/Si(100) Thin Film Systems." Defect and Diffusion Forum 264 (April 2007): 159–62. http://dx.doi.org/10.4028/www.scientific.net/ddf.264.159.

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Influence of an annealing environment and film thickness on the phase formation in the Ti(30 nm)/Si(100), [(Ti+Si) 200 nm]/Si(100) thin film systems produced by magnetron sputtering and the Ti(200 nm)/Si(100) thin film system produced by electron-beam sputtering were investigated by X-ray and electron diffraction, Auger electron spectroscopy (AES), secondary ion mass-spectrometry (SIMS) and resistivity measurements. Solid-state reactions in the thin film systems under investigation were caused by diffusion processes during annealing in the different gas environments: under vacuum of 10-4 - 10-7 Pa, flow of nitrogen and hydrogen. It is shown that the decrease of Ti layer thickness from 200 to 30 nm in the Ti/Si(100) film system causes the increase of the transition temperature of the metastable C49 TiSi2 phase to the stable C54 TiSi2 phase up to 1070 K at vacuum annealing. During annealing in the nitrogen flow of the Ti(30 nm)/Si(100) thin film system the C49 TiSi2 is the first crystal phase which is formed at 870 K. For annealings of the [(Ti+Si) 200 nm]/Si(100) thin film system by impulse heating method or for furnace annealings in inert gas atmosphere of N2, Ar, H or higher vacuum (10-5 Pa) the crystallization process has two stages: the first metastable C49 TiSi2 phase is formed at 870 K and then at higher temperatures it is transformed to the stable C54 TiSi2 phase.

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Morita, Satoshi. "Faster Annealing Schedules for Quantum Annealing." Journal of the Physical Society of Japan 76, no. 10 (October 15, 2007): 104001. http://dx.doi.org/10.1143/jpsj.76.104001.

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Gornakova, Alena S., Boris B. Straumal, Alexander I. Tyurin, Natalia S. Afonikova, Alexander V. Druzhinin, Gregory S. Davdian, and Askar R. Kilmametov. "Phase Transformations Caused by Heat Treatment and High-Pressure Torsion in TiZrHfMoCrCo Alloy." Materials 16, no. 4 (February 5, 2023): 1354. http://dx.doi.org/10.3390/ma16041354.

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In this work the high-entropy alloy studied contained six components, Ti/Zr/Hf/Mo/Cr/Co, and three phases, namely one phase with body-centered cubic lattice (BCC) and two Laves phases C14 and C15. A series of annealings in the temperature range from 600 to 1000 °C demonstrated not only a change in the microstructure of the TiZrHfMoCrCo alloy, but also the modification of phase composition. After annealing at 1000 °C the BCC phase almost fully disappeared. The annealing at 600 and 800 °C leads to the formation of new Laves phases. After high-pressure torsion (HPT) of the as-cast TiZrHfMoCrCo alloy, the grains become very small, the BCC phase prevails, and C14 Laves phase completely disappears. This state is similar to the state after annealing at high effective temperature Teff. The additional annealing at 1000 °C after HPT returns the phase composition back to the state similar to that of the as-cast alloy after annealing at 1000 °C. At 1000 °C the BCC phase completely wets the C15/C15 grain boundaries (GBs). At 600 and 800 °C the GB wetting is incomplete. The big spread of nanohardness and Young’s modulus for the BCC phase and (C15 + C14) Laves phases is observed.

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Bonilla-Petriciolet, Adrián, Juan Carlos Tapia-Picazo, Carlos Soto-Becerra, and Javier Gerson Zapiain-Salinas. "Perfiles de comportamiento numérico de los métodos estocásticos simulated annealing y very fast simulated annealing en cálculos termodinámicos." Ingeniería, investigación y tecnología 12, no. 1 (January 1, 2011): 51–62. http://dx.doi.org/10.22201/fi.25940732e.2011.12n1.006.

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Gokhfeld, N. V., A. V. Okulov, O. S. Iusupova, V. G. Pushin, and V. P. Pilyugin. "Mechano-structural characteristics of Cu₇₂Au₂₄Ag₄ alloy subjected to severe plastic deformation combined with subsequent heat treatment." E3S Web of Conferences 389 (2023): 01068. http://dx.doi.org/10.1051/e3sconf/202338901068.

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Mechano-structural characteristics of the synthesized Cu72Au24Ag4 and commercial Cu59Au33Ag7Fe1 alloys subjected to preliminary severe plastic deformations (SPDs) by high-pressure torsion combined with subsequent annealings at different temperatures and holding times were studied by means of scanning and transmission electron microscopy as well as durometry. Due to SPDs, it was possible to refine the structure of the investigated alloys to submicro- and nanostructural state. As a result of certain annealing regimes, the atomic ordering processes began to occur in the alloys. The microstructural features and mechanical properties after preliminary SPDs and subsequent annealings were compared for the studied alloys. Influence of the deformation degree and subsequent annealing regimes on the kinetics of atomic ordering and changes in mechanical properties was shown. In addition, it was found the inhibition effect of the nanograin growth due to the barrier action of dispersed precipitates.

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Giannazzo, Filippo, Martin Rambach, Dario Salinas, Fabrizio Roccaforte, and Vito Raineri. "Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy." Materials Science Forum 615-617 (March 2009): 457–60. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.457.

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We studied the evolution of the electrical activation with annealing temperature and time in 4H-SiC implanted with Al ions at room temperature (RT). An accurate comparison between the electrical activation data obtained by FPP and SCM was carried out. The dependence of the electrically active profiles on annealing time was studied during isothermal (Tann=1600 °C) annealings for times ranging from 0 (spike anneal) to 30 min. By performing isochronal (t=30 min) processes at temperatures from 1550 to 1650 °C, the effect of the annealing temperature on the net doping concentration profiles was studied. Moreover, the activation energy (6.30.3 eV) associated to the process was extracted from the Arrhenius plot of the net active dose. Finally, the effect of the different thermal budgets on the roughening of the Al implanted 4H-SiC surface was also investigated in details by atomic force microscopy.

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Nishimori, H. "Comparison of quantum annealing and simulated annealing." European Physical Journal Special Topics 224, no. 1 (February 2015): 15–16. http://dx.doi.org/10.1140/epjst/e2015-02338-0.

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Hamdi Razzeg, Khalid, Abdul Kareem Dahas Ali, and ,. Chanar Abiden Zaynel. "Effect of repeated annealing on the synthetic and electrical properties of Bi2-(x+y)PbxAgy Sr2Ca2Cu3O10+δ electrically superconductor." Tikrit Journal of Pure Science 24, no. 4 (August 4, 2019): 57. http://dx.doi.org/10.25130/j.v24i4.846.

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This research involved the preparation of Bi2-(x+y)PbxAgy Sr2Ca2Cu3O10+δ with different concentrations of (x,y) which are (x=y=0)(x=0.05,y=0.15)(x=y=0.1)(x=0.15,y=0.05) by the method of solid state reaction under hydrostatic pressure of 8 ton /cm2 and at annealing temperature of 1123K in presence of sufficient amount of oxygen. In order to obtain an increase in the regularity of crystalline composite and also to obtain the best critical temperature, the annealing was repeated on these samples at 723K. After X-ray diffraction (XRD) test to know how effective the partial substitution and repeated annealing is, it was obvious that the crystalline composite was of tetragonal type and the best substitution ratio is when (x=0.05,y=0.15) where the values of lattice dimensions were a=b=5.4056°A, c=37.4226°A, after repeating the annealing process on these samples ,the crystalline composite kept its type and with conspicuous increase in the length of c-axis, but the best sample after repeating the annealing was at ratio of (x=y=0.1) where the values of lattice dimensions became a=b=5.4030°A,c=37.5230°A when it was a=b=5.4011°A,c=37.0660°A before repeating the annealing .When the electrical properties of these samples was studied ,we noticed that the oxygen has an important role in increasing the critical temperature and we obtained the best critical temperature Tc=144K and that’s when x=0.05,y=0.15 while after repeating the annealing it was Tc=146K and that’s when x=y=0.1 and it was Tc=136K before repeating the annealin http://dx.doi.org/10.25130/tjps.24.2019.073

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Molodov, Dmitri A., and Nathalie Bozzolo. "Magnetically Affected Texture and Microstructure Evolution during Grain Growth in Zirconium." Materials Science Forum 715-716 (April 2012): 946–51. http://dx.doi.org/10.4028/www.scientific.net/msf.715-716.946.

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The effect of a magnetic field on texture and microstructure development in cold rolled (80%) commercially pure zirconium (Zr701) was investigated. X-ray diffraction and EBSD measurements were utilized for the texture and microstructure characterization. The results revealed that a magnetic field promotes grain growth in the investigated material. During annealings at 550°C this is particularly apparent from the faster development of specific (0/180, 35, 30) texture components and the bigger mean grain size after magnetic annealing. The magnetic annealing at 700°C resulted in an asymmetry of the two major texture components. This is due to a magnetic driving force for grain growth arising from the anisotropic magnetic susceptibility of zirconium. During annealing at 700°C the abnormal grain growth occurred. This behavior is attributed to the higher mobility of grain boundaries between grains misoriented by 30° around [000. The magnetic field essentially enhanced the observed abnormal grain growth.

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Xu, Li Yan, Xiao Na Li, Jinn P. Chu, and Chuang Dong. "The Preparation for Cu(Sn) Films of Barrierless Interconnection." Materials Science Forum 654-656 (June 2010): 1744–47. http://dx.doi.org/10.4028/www.scientific.net/msf.654-656.1744.

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In this study, Cu films doped with different Sn concentrations from 0.6-1.4 at.% were prepared by magnetron co-sputtering. The electrical resistivities and microstructures of Cu (Sn) films after annealings were investigated. The results showed that a sharp increase of the resistivity of Cu (1.4 at.% Sn) and Cu (1.1 at.% Sn) films were found after annealing above at 500°C. The existence of 0.6 at.% Sn in the Cu film is in solid solution state. A minimum electrical resistivity value of ~3.2μΩ•cm was obtained after annealing at 600°C for 1h . Even after a annealing at 700°C, the Cu/Si interface of Cu (0.6 at.% Sn) film still remained sharp without any Cu-Si and Cu-Sn compounds. The results confirmed that the lower resistivity and higher stability of Cu films can be achieved by strictly control of the doping concentrations and the existing state (solid solution without compounds and precipitates) of Sn element.

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Frazzetto, Alessia, Fabrizio Roccaforte, Filippo Giannazzo, R. Lo Nigro, M. Saggio, Edoardo Zanetti, and Vito Raineri. "Effects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiC." Materials Science Forum 717-720 (May 2012): 825–28. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.825.

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This paper reports on the effects of different post-implantation annealings on the electrical properties of interfaces to p-type implanted 4H-SiC. The morphology of p-type implanted 4H-SiC was controlled using a capping layer during post-implantation activation annealing of the dopant. Indeed, the surface roughness of Al-implanted regions strongly depends on the use of the protective capping layer during the annealing. However, while the different morphological conditions do not affect the macroscopical electrical properties of the implanted SiC (such as the sheet resistance), they led to an improvement of the morphology and of the specific contact resistance of Ti/Al Ohmic contacts formed on the implanted regions. These electrical and morphologic improvements were associated with a lowering of Schottky barrier height. Preliminary results showed that the different activation annealing conditions of p-type implanted SiC can affect also the electrical parameters (like threshold voltage and mobility) of lateral MOSFETs.

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Kwon, Hyeokjin, Seunghun Baik, Jae Jang, Jaewon Jang, Sunkook Kim, Costas Grigoropoulos, and Hyuk-Jun Kwon. "Ultra-Short Pulsed Laser Annealing Effects on MoS2 Transistors with Asymmetric and Symmetric Contacts." Electronics 8, no. 2 (February 17, 2019): 222. http://dx.doi.org/10.3390/electronics8020222.

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The ultra-short pulsed laser annealing process enhances the performance of MoS2 thin film transistors (TFTs) without thermal damage on plastic substrates. However, there has been insufficient investigation into how much improvement can be brought about by the laser process. In this paper, we observed how the parameters of TFTs, i.e., mobility, subthreshold swing, Ion/Ioff ratio, and Vth, changed as the TFTs’ contacts were (1) not annealed, (2) annealed on one side, or (3) annealed on both sides. The results showed that the linear effective mobility (μeff_lin) increased from 13.14 [cm2/Vs] (not annealed) to 18.84 (one side annealed) to 24.91 (both sides annealed). Also, Ion/Ioff ratio increased from 2.27 × 10 5 (not annealed) to 3.14 × 10 5 (one side annealed) to 4.81 × 10 5 (both sides annealed), with Vth shifting to negative direction. Analyzing the main reason for the improvement through the Y function method (YFM), we found that both the contact resistance (Rc) and the channel interface resistance (Rch) improves after the pulsed laser annealings under different conditions. Moreover, the Rc enhances more dramatically than the Rch does. In conclusion, our picosecond laser annealing improves the performance of TFTs (especially, the Rc) in direct proportion to the number of annealings applied. The results will contribute to the investigation about correlations between the laser annealing process and the performance of devices.

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Pascual, R., S. Saimoto, and J. M. Baribeau. "Effects of thermal processing on (SimGen)p superlattices." Canadian Journal of Physics 69, no. 3-4 (March 1, 1991): 241–45. http://dx.doi.org/10.1139/p91-040.

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In this work we report an X-ray diffraction study of thermally induced interdiffusion and strain relaxation in molecular beam epitaxy grown (SimGen)p short-period superlattices. Both rapid and furnace thermal annealings in the range 500–700 °C were used to generate structural changes in the various samples. Strain relaxation was studied by measuring the shift of (400) superlattice peaks on annealing. About half of the strain was relieved in the first few minutes of annealing. The remaining strain was relieved at a much lower rate and residual strain persisted even after several hours of heating. Also, the decay of the first order (000) superlattice peak was monitored as a function of annealing time. An initial rapid nonexponential decrease in peak intensity was observed, coincident with the sudden strain relaxation found at short annealing times. A slower, exponential decay rate was observed at longer times, so that a wavelength-dependent interdiffusion coefficient Dλ could be calculated. The variation of Dλ with the superlattice period and the effect of different substrates and buffer layers was studied. Diffusion was faster in structures alternating thin Si and thick Ge layers suggesting that migration of Si into Ge is the dominant diffusion process.

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KITA, Hajime. "Simulated Annealing." Journal of Japan Society for Fuzzy Theory and Systems 9, no. 6 (1997): 870–75. http://dx.doi.org/10.3156/jfuzzy.9.6_870.

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Ninio, Matan, and Johannes J. Schneider. "Weight annealing." Physica A: Statistical Mechanics and its Applications 349, no. 3-4 (April 2005): 649–66. http://dx.doi.org/10.1016/j.physa.2004.10.022.

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Bertsimas, Dimitris, and John Tsitsiklis. "Simulated Annealing." Statistical Science 8, no. 1 (February 1993): 10–15. http://dx.doi.org/10.1214/ss/1177011077.

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Johnson, Mark E. "Simulated Annealing." American Journal of Mathematical and Management Sciences 8, no. 3-4 (February 1988): 205–7. http://dx.doi.org/10.1080/01966324.1988.10737241.

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Sharma, Apoorva, Maria A. Hoffmann, Patrick Matthes, Nicole Kohler, Sandra Busse, Mathias Muller, Horst Exner, Stefan E. Schulz, Dietrich R. T. Zahn, and Georgeta Salvan. "Magnetic Tunnel Junctions: Laser Annealing Versus Oven Annealing." IEEE Transactions on Magnetics 55, no. 1 (January 2019): 1–4. http://dx.doi.org/10.1109/tmag.2018.2873428.

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Cicirello, Vincent. "Variable Annealing Length and Parallelism in Simulated Annealing." Proceedings of the International Symposium on Combinatorial Search 8, no. 1 (September 1, 2021): 2–10. http://dx.doi.org/10.1609/socs.v8i1.18424.

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In this paper, we propose: (a) a restart schedule for an adaptive simulated annealer, and (b) parallel simulated annealing, with an adaptive and parameter-free annealing schedule. The foundation of our approach is the Modified Lam annealing schedule, which adaptively controls the temperature parameter to track a theoretically ideal rate of acceptance of neighboring states. A sequential implementation of Modified Lam simulated annealing is almost parameter-free. However, it requires prior knowledge of the annealing length. We eliminate this parameter using restarts, with an exponentially increasing schedule of annealing lengths. We then extend this restart schedule to parallel implementation, executing several Modified Lam simulated annealers in parallel, with varying initial annealing lengths, and our proposed parallel annealing length schedule. To validate our approach, we conduct experiments on an NP-Hard scheduling problem with sequence-dependent setup constraints. We compare our approach to fixed length restarts, both sequentially and in parallel. Our results show that our approach can achieve substantial performance gains, throughout the course of the run, demonstrating our approach to be an effective anytime algorithm.

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Rajasekaran, Sanguthevar, and John H. Reif. "Nested annealing: a provable improvement to simulated annealing." Theoretical Computer Science 99, no. 1 (June 1992): 157–76. http://dx.doi.org/10.1016/0304-3975(92)90177-h.

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Lukshina, V. A., N. V. Dmitrieva, and A. P. Potapov. "Field- and Stress-Induced Magnetic Anisotropy in Nanocrystalline Fe-Based and Amorphous Co-Based Alloys." Textures and Microstructures 32, no. 1-4 (January 1, 1999): 289–94. http://dx.doi.org/10.1155/tsm.32.289.

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For nanocrystalline alloy Fe73.5Cu1Nb3Si13.5B9 thermomechanical treatment was carried out simultaneously with nanocrystallizing annealing (1) or after it (2). It was shown that a change in magnetic properties for the case 1 is essentially greater than for the case 2. Complex effect of thermomagnetic and thermomechanical treatments on magnetic properties was studied in the above-mentioned nanocrystalline alloy as well as in the amorphous alloy Fe5Co70.6Si15B9.4., During the annealings both field and stress were aligned with the long side of the specimens. It was shown that the magnetic field, AC or DC, decreases an effect of loading. Moreover, the magnetic field, AC or DC, applied after stress-annealing can destroy the magnetic anisotropy already induced under load.

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Danilov, S. E., and V. L. Arbuzov. "Production of pure nickel alloys doped with sulfur and phosphorus." Diagnostics, Resource and Mechanics of materials and structures, no. 6 (December 2020): 48–53. http://dx.doi.org/10.17804/2410-9908.2020.6.048-053.

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A procedure for alloying nickel with sulfur and phosphorus by diffusion and homogenizing annealing is described using the example of pure nickel (RRR at 600). A scheme of the installation for alloying from the gas phase is described. The possibility of uniform alloying with sulfur and phosphorus of samples and material in the form of plates or foils with a thickness of 0.2 mm or thinner at a concentration ranging between 0.001 and 0.08) at. % is shown. Diffusion annealing is carried out after heating and pumping out in a high vacuum and without contamination, in a quartz volume containing sulfur or phosphorus vapors at a temperature of 1100 to 1200 °C. By choosing the ratio of the masses of the alloyed material and the corresponding filling of sulfur or phosphorus, it is possible to predict in advance the resulting concentration of impurities with a sufficient time of annealing. The impurity concentration is uniform in volume within ten percent. Modeling and control annealings with the measurement of the residual resistivity of the control samples allows you to evaluate the results obtained.

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Song, A. Y., X. H. Dai, J. M. Song, D. Y. Ge, J. Shi, X. Y. Fang, Z. N. Li, et al. "Investigation of interface and oxygen vacancy of Pt/Ba0.6Sr0.4TiO3/MgO interdigital capacitor through sequent low and high temperature annealings." Modern Physics Letters B 31, no. 11 (April 20, 2017): 1750124. http://dx.doi.org/10.1142/s021798491750124x.

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Pt/Ba[Formula: see text]Sr[Formula: see text]TiO[Formula: see text] (BST)/MgO interdigital capacitor (IDC) was patterned from a Pt/BST/MgO heterostructure, in which Pt film was prepared by sputtering and epitaxial BST film by pulsed laser deposition (PLD). Post-annealings at 200[Formula: see text]C and 750[Formula: see text]C were successively applied to the sample in order to investigate the impacts of post-annealing on the structural and dielectric properties of the IDC. The dielectric constants of the sample for as-grown and annealed at 200[Formula: see text]C and 750[Formula: see text]C were 1529, 1717 and 1800 and the corresponding dielectric losses were 0.073, 0.062 and 0.059, respectively. This is attributed to the fact that 200[Formula: see text]C annealing can improve the quality of Pt/BST interface and 750[Formula: see text]C annealing can reduce the oxygen vacancies in BST film. Our results provide the evidences that both the interface and oxygen vacancy play very important roles in dielectric properties of BST-based IDCs.

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Ferens, Ken, Darcy Cook, and Witold Kinsner. "Chaotic Walk in Simulated Annealing Search Space for Task Allocation in a Multiprocessing System." International Journal of Cognitive Informatics and Natural Intelligence 7, no. 3 (July 2013): 58–79. http://dx.doi.org/10.4018/ijcini.2013070104.

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This paper proposes the application of chaos in large search space problems, and suggests that this represents the next evolutionary step in the development of adaptive and intelligent systems towards cognitive machines and systems. Three different versions of chaotic simulated annealing (XSA) were applied to combinatorial optimization problems in multiprocessor task allocation. Chaotic walks in the solution space were taken to search for the global optimum or “good enough” task-to-processor allocation solutions. Chaotic variables were generated to set the number of perturbations made in each iteration of a XSA algorithm. In addition, parameters of a chaotic variable generator were adjusted to create different chaotic distributions with which to search the solution space. The results show that the convergence rate of the XSA algorithm is faster than simulated annealing when the solutions are far apart in the solution space. In particular, the XSA algorithms found simulated annealing’s best result on average about 4 times faster than simulated annealing.

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Dmitrieva, N. V., V. A. Lukshina, G. V. Kurlyandskaya, and A. P. Potapov. "Thermal Stability of Field- and Stress-Induced Anisotropy in Nanocrystalline Fe-Based and Amorphous Co-Based Alloys." Textures and Microstructures 32, no. 1-4 (January 1, 1999): 281–87. http://dx.doi.org/10.1155/tsm.32.281.

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Thermal stability of induced magnetic anisotropy (IMA) was studied in a course of subsequent annealings without any external effects for already field- or stress-annealed specimens of the nanocrystalline Fe73.5Cu1Nb3Si13.5B9 and amorphous Fe3Co67Cr3Si15B12 alloys. For these alloys the dependence of IMA thermal stability on the magnitude of the IMA constant (Ku) and temperature of stress-annealing was investigated. For the nanocrystalline alloy thermal stability of field- and stress-induced anisotropy with identical Ku was compared. It was shown that nanocrystalline specimens with identical Ku values after field- or stress-annealing have identical thermal stability of IMA. This can point to a similarity of the mechanisms of IMA formation after field- or stress-annealings. Thermal stability of stress-induced anisotropy in the nanocrystalline alloy with Ku value less than 1000 J/m3 and the amorphous alloy with Ku less than 100 J/m3 depends on the value of Ku. For both stress-annealed nanocrystalline and amorphous alloys magnetic anisotropy induced at higher temperatures is more stable because more long-range and energy-taking processes take place at these temperatures.

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Lotkov, Aleksandr, Victor Grishkov, Roman Laptev, Dorzhima Zhapova, Natalia Girsova, and Angelina Gusarenko. "Effect of Isochronous Annealings on the Microstructure and Mechanical Properties of the Ti49.8Ni50.2 (at.%) Alloy after abc Pressing at 573 K." Metals 13, no. 10 (September 22, 2023): 1632. http://dx.doi.org/10.3390/met13101632.

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The regularities and features of the evolution of the grain–subgrain structure, phase composition and mechanical properties in Ti49.8Ni50.2 (at.%), depending on the temperature of isochronous annealings at 573–973 K are herein studied. The state of the Ti49.8Ni50.2 (at.%) alloy samples after abc pressing at T = 573 K with the given true strain e = 9.55 was taken as the initial state. It is shown that the grain–subgrain structure of the samples after annealing for 1 h in the temperature range of 573–673 K changes slightly. In samples annealed at 673 K, regions with the microband structure similar to the microstructure of a fast-frozen turbulent liquid flow were found. It has been established that during annealing at 773 K the beginning of an active recrystallization process is realized; the size of grains does not exceed the submicrocrystalline scale (~200 nm). At 873 K, the recrystallization process occurs in the entire volume of the samples; the grains with an average size of 2 ± 0.5 µm are almost equiaxed. The microstructure of the samples after annealing at 973 K (with average grain sizes of 5 ± 0.5 µm) is qualitatively similar to the microstructure of the samples after annealing at 873 K. It was found that the phase composition of the samples as a result of isochronous annealing at 573–973 K changes from R and B19’ immediately after abc pressing to a three-phase state: B2, R and B19’ phases. It is shown that the highest values of yield stress σy, ultimate tensile strength σUTS (1043 MPa and 1232 MPa, correspondingly) and low ductility (the deformation to fracture εf = 48%) are observed in the initial samples. Increasing the temperature of post-deformation annealing and, correspondingly, the development of recrystallization, led to a decrease in σy, σUTS and an increase in εf to the values of these characteristics in the coarse-grained samples (σy = 400 MPa, σUTS = 920 MPa and εf = 90%).

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Suzuki, Sei. "Kibble-Zurek mechanism in simulated annealing and quantum annealing." Journal of Physics: Conference Series 302 (July 20, 2011): 012046. http://dx.doi.org/10.1088/1742-6596/302/1/012046.

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Hamma, Beidi, Sami Viitanen, and Aimo Törn. "Parallel continuous simulated annealing for global optimization simulated annealing∗." Optimization Methods and Software 13, no. 2 (January 2000): 95–116. http://dx.doi.org/10.1080/10556780008805777.

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Bhattacharya, Arijit, Sayantan Ghatak, Rajib Das, and Satrajit Ghosh. "Simulated Annealing Approach onto VLSI Circuit Partitioning." Mathematical Journal of Interdisciplinary Sciences 2, no. 2 (March 3, 2014): 133–39. http://dx.doi.org/10.15415/mjis.2014.22010.

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34

Khinchi, Shailendra Singh. "Fe75-xCoxCu1Nb3Si15B6 Alloy with Rapid Stress Annealing." International Journal of Trend in Scientific Research and Development Volume-1, Issue-5 (August 31, 2017): 243–46. http://dx.doi.org/10.31142/ijtsrd2272.

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35

Zhou, Liqin, P. M. Vilarinho, P. Q. Mantas, and J. L. Baptista. "Dielectric Properties of Pb(Fe2/3W1/3)1−xMnxO3 Ceramics in the Temperature Range 200–600 K." Journal of Materials Research 15, no. 6 (June 2000): 1342–48. http://dx.doi.org/10.1557/jmr.2000.0195.

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The dielectric properties of Mn-doped Pb(Fe2/3W1/3)1−xMnxO3 (x = 0, 0.001, 0.003, and 0.005) in the temperature range 200–600 K were investigated. Two sets of dielectric peaks, located at 200–350 K and 350–600 K, were observed. The intensity of the dielectric permittivity and loss factor peaks for both relaxations decreased with the increase in the Mn content and no peak occurred when x = 0.005. Nonlinear current–voltage (I–V) behavior was observed in the samples containing less than 0.005Mn. The activation energy values for the relaxations at 200–350 K and at 350–600 K were around 0.42 and 0.56 eV, respectively. The direct current conduction activation energies were around 0.41 eV. Nitrogen annealing eliminated the relaxation peaks at 200–350 K while oxygen annealing enhanced them. Both annealings eliminated the dielectric peaks at 350–600 K. The nonlinear I–V characteristic tended to vanish either after the oxygen or the nitrogen annealing treatments. Relaxation mechanisms are proposed and discussed. It is suggested that the relaxation at 200–350 K is related to electron hole while the relaxation at 350–600 K is attributed to microstructure-dependent space-charge polarization.

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Potapov, Anatolii P., Natalia V. Dmitrieva, Vera A. Lukshina, Elena G. Volkova, and Boris N. Filippov. "Nanocrystalline Soft Magnetic Fe-, Co-Based Alloys Doped by Hf, Mo and Zr with Enhanced Thermal Stability of Magnetic Properties." Solid State Phenomena 215 (April 2014): 196–99. http://dx.doi.org/10.4028/www.scientific.net/ssp.215.196.

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Magnetic properties, thermal stability and structure of the alloys - (Fe0.6Co0.4)86Hf7B6Cu1 (1), (Fe0.7Co0.3)88Hf7B4Cu1 (2) and (Fe0.7Co0.3)88Hf4Mo2Zr1B4Cu1 (3) obtained in the form of ribbons quenched from the melt were investigated after their nanocrystallization in the course of the thermal (TA) and stress (SA) annealings in the air at different temperatures. In all three alloys SA resulted in the induction of magnetic anisotropy with an easy axis along the direction of the ribbon. It is established that the alloy 3 after SA at 620°C for 20 min has the best thermal stability of magnetic properties, which remained practically unchanged after the subsequent annealing at 550°C for 26 hours. Magnetic properties of the alloys 1 and 2 subjected to SA under the same conditions did not change after annealing at 500°C.

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Han, Fei, Gao Yong Lin, Zai Lin Wang, and Da Shu Peng. "Oxidation Analysis of 304 Austenitic Stainless Steel Sheet after Intermediate Annealing." Key Engineering Materials 474-476 (April 2011): 376–80. http://dx.doi.org/10.4028/www.scientific.net/kem.474-476.376.

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Intermediate annealing to stainless steel can eliminate the residual stress, and improve plasticity and ductility effectively, but oxidation after different annealing processes has considerable difference. In this research, three annealing processes, low temperature annealing with ordinary heat treatment furnace, high temperature annealing with ordinary heat treatment furnace and high temperature bright annealing, were used to gain insight into the mechanics of intermediate annealing. Specimens of 304 austenitic stainless steel sheets were adopted in the intermediate annealing experiments which pre-deformation was 15%. The specimens’ surface microstructure were observed by scanning electron microscope (SEM), and the specimen oxidation, which happened in the annealing process, were also analyzed. The results show that bright annealing must be adopted in high temperature annealing.

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38

Lin, Fangyi. "A review of cooling in the industry." Applied and Computational Engineering 61, no. 1 (May 8, 2024): 210–15. http://dx.doi.org/10.54254/2755-2721/61/20240958.

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In modern society, metal products are needed in various industries. The annealing process is commonly employed in manufacturing. Based on the specifications of the product, the purpose of annealing is different, the annealing process specification has a variety of commonly used complete annealing, spheroidal annealing, and stress relief annealing. This paper investigates and compares the characteristics of different annealing processes in the production process through the literature research method. This paper describes seven annealing methods, mainly detailing two annealing processes, spheroidizing annealing, and recrystallization annealing, and gives examples of the advantages and disadvantages of these two processes. Annealing is primarily used to improve machinability and reduce hardness. It also stabilizes size, lowers residual stress, and lessens the tendency for deformation and cracking. Cut down on grain, reorganize, and get rid of organizational flaws, even material composition and organization can enhance a material's qualities or prepare it for upcoming heat treatments.

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39

Suguro, Kyoichi. "Ultra-Rapid Thermal Process for ULSIs." Materials Science Forum 573-574 (March 2008): 319–24. http://dx.doi.org/10.4028/www.scientific.net/msf.573-574.319.

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This paper reports on the ultra-rapid thermal annealing of next generation MOSFETs. In ultra-rapid thermal annealing, the most important issue is to achieve a good balance between electrical activation and impurity diffusion. Another issue of annealing implantation damages is also discussed: Optimized annealing combined with millisecond annealing and conventional halogen lamp annealing is necessary for annealing out defects at end-of range region. Application possibilities of millisecond annealing for deep junction activation and oxidation are also discussed.

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Golden, John, and Daniel O’Malley. "Reverse annealing for nonnegative/binary matrix factorization." PLOS ONE 16, no. 1 (January 6, 2021): e0244026. http://dx.doi.org/10.1371/journal.pone.0244026.

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It was recently shown that quantum annealing can be used as an effective, fast subroutine in certain types of matrix factorization algorithms. The quantum annealing algorithm performed best for quick, approximate answers, but performance rapidly plateaued. In this paper, we utilize reverse annealing instead of forward annealing in the quantum annealing subroutine for nonnegative/binary matrix factorization problems. After an initial global search with forward annealing, reverse annealing performs a series of local searches that refine existing solutions. The combination of forward and reverse annealing significantly improves performance compared to forward annealing alone for all but the shortest run times.

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Torganchuk, Vladimir, Dmitri A. Molodov, Andrey Belyakov, and Rustam Kaibyshev. "Microstructure and Mechanical Properties of an Ultrafine Grained Medium-Mn Steel." Defect and Diffusion Forum 385 (July 2018): 308–13. http://dx.doi.org/10.4028/www.scientific.net/ddf.385.308.

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The effect of cold working followed by annealing on the development of ultrafine grained microstructure and mechanical properties of an Fe-12%Mn-0.6%C-1.5%Al medium-manganese steel was studied. The steel was cold rolled with intermediate annealings and then annealed at 873 K or 923 K for 30 min. The yield strength and total elongation of the Fe-12Mn-0.6C-1.5Al steel after cold rolling were 1200 MPa and 14%, respectively. The heat treatments resulted in the formation of two phase (austenite-ferrite) ultrafine grained microstructures with average grain sizes of 0.9 to 1.2 μm, depending on the annealing temperature. The annealed ultrafine grained steel samples exhibit the yield strength in the range of 800-950 MPa, the ultimate tensile strength in the range of 1150-1200 MPa, and total elongation of 12% to 19%.

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Luo, Kun, Cheng Zhao, and Xiang Li. "Technology Research on Relief Annealing of 65Mn Metal Rubber." Applied Mechanics and Materials 121-126 (October 2011): 2956–59. http://dx.doi.org/10.4028/www.scientific.net/amm.121-126.2956.

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The paper had researched relief annealing of 65Mn Metal Rubber. Test results had shown that relief annealing significantly changed static and dynamic loss factors of 65Mn Metal Rubber. The influence of annealing temperature, annealing time, Metal Rubber density and cooling to static and dynamic loss factors was obviously different. The optimal relief annealing parameters of 65Mn Metal Rubber were annealing temperature 270°C, annealing time 25 minutes, Metal Rubber density 1.46g/cm3, and oil cooling.

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Cho, Sung Jin, Cong Wang, and Nam Young Kim. "A Comparative Optimization of Electrical Properties and Surface Morphology of Ti/Al/Ta/Au Ohmic Contacts in AlGaN/GaN HEMTs on Si(111), Sapphire, 4H-SiC Substrates." Advanced Materials Research 538-541 (June 2012): 2207–10. http://dx.doi.org/10.4028/www.scientific.net/amr.538-541.2207.

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In the process of characterizing AlGaN/GaN HEMTs on Si (111), Sapphire, 4H-SiC substrates, various Rapid Thermal Annealing (RTA) conditions for the Ti/Al/Ta/Au ohmic contact process and the resulting surface analysis have been investigated. In order to achieve a low ohmic contact resistance (RC) and a high quality surface morphology, we tested seven steps (800 °C to 920 °C) annealing temperatures and two steps (15, 30 sec) annealing times. According to these annealing temperatures and times, the optimal ohmic resistance of 3.62 × 10-6 Ohm • cm2 on Si(111) substrate, 9.44 × 10-6 Ohm • cm2 on Sapphire substrate and 1.24 × 10-6 Ohm • cm2 on 4H-SiC substrate are obtained at an annealing temperature of 850 °C and an annealing time of 30 sec, 800 °C and an annealing time of 30 sec and 900 °C and an annealing time of 30 sec, respectively. The surface morphologies of the ohmic contact metallization at different annealing temperatures are measured using an Atomic Force Microscope (AFM). AFM morphology Root Mean Square (RMS) level determines the relationship of the annealing temperature and the annealing time for all of the samples. According to these annealing temperatures and times, the optimal ohmic surface RMS roughness of 13.4 nm on Si(111) substrate, 3.8 nm on Sapphire substrate and 2.9 nm on 4H-SiC substrate are obtained at an annealing temperature of 850 °C and an annealing time of 30 sec, 800 °C and an annealing time of 30 sec and 900 °C and an annealing time of 30 sec, respectively.

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Batra, Y., D. Kabiraj, and D. Kanjilal. "Development of Ge Nanoparticles Embedded in GeO2 Matrix." Journal of Nanoscience and Nanotechnology 8, no. 8 (August 1, 2008): 4081–85. http://dx.doi.org/10.1166/jnn.2008.an04.

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Germanium (Ge) nanoparticles have attracted a lot of attention due to their excellent optical properties. In this paper, we report on the formation of Ge nanoparticles embedded in GeO2 matrix prepared by electron beam evaporation and subsequent annealing. Transmission electron microscopy (TEM) studies clearly indicate the formation of Ge nanocrystals in the films annealed at 500 °C. Fourier transform infrared (FTIR) spectroscopic studies are carried out to verify the evolution of the structure after annealingat each stage. Micro-Raman analysis also confirms the formation of Ge nanoparticles in the annealed films. Development of Ge nanoparticles is also established by photoluminescence (PL) analysis. Surface morphology study is carried out by atomic force microscopy (AFM). It shows the evolution of granular structure of the films with increasing annealing temperature.

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Karanikolas, Vasilios, and Shiro Kawabata. "Pulsed Quantum Annealing." Journal of the Physical Society of Japan 89, no. 9 (September 15, 2020): 094003. http://dx.doi.org/10.7566/jpsj.89.094003.

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Behrman, E. C., J. E. Steck, and M. A. Moustafa. "Learning quantum annealing." Quantum Information and Computation 17, no. 5&6 (April 2017): 460–87. http://dx.doi.org/10.26421/qic17.5-6-6.

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We propose and develop a new procedure, whereby a quantum system can learn to anneal to a desired ground state. We demonstrate successful learning to produce an entangled state for a two-qubit system, then demonstrate generalizability to larger systems. The amount of additional learning necessary decreases as the size of the system increases. Because current technologies limit measurement of the states of quantum annealing machines to determination of the average spin at each site, we then construct a “broken pathway” between the initial and desired states, at each step of which the average spins are nonzero, and show successful learning of that pathway. Using this technique we show we can direct annealing to multiqubit GHZ and W states, and verify that we have done so. Because quantum neural networks are robust to noise and decoherence we expect our method to be readily implemented experimentally; we show some preliminary results which support this.

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47

Kallab, Chadi, Samir Haddad, Jinane Sayah, and Mohamad Chakroun. "Generic Simulated Annealing." Open Journal of Applied Sciences 12, no. 06 (2022): 1011–25. http://dx.doi.org/10.4236/ojapps.2022.126069.

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48

Hibat-Allah, Mohamed, Estelle M. Inack, Roeland Wiersema, Roger G. Melko, and Juan Carrasquilla. "Variational neural annealing." Nature Machine Intelligence 3, no. 11 (October 25, 2021): 952–61. http://dx.doi.org/10.1038/s42256-021-00401-3.

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49

Silverman, Amihai, and Joan Adler. "Animated Simulated Annealing." Computers in Physics 6, no. 3 (1992): 277. http://dx.doi.org/10.1063/1.4823076.

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50

Xavier-de-Souza, S., J. A. K. Suykens, J. Vandewalle, and D. Bolle. "Coupled Simulated Annealing." IEEE Transactions on Systems, Man, and Cybernetics, Part B (Cybernetics) 40, no. 2 (April 2010): 320–35. http://dx.doi.org/10.1109/tsmcb.2009.2020435.

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Journal articles on the topic 'Annealing'

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