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Academic literature on the topic 'Annealing'

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Published: 4 June 2021
Last updated: 22 June 2024

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Journal articles on the topic "Annealing"

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Wzorek, Marek, Andrzej Czerwiński, Andrian V. Kuchuk, Jacek Ratajczak, Ania Piotrowska, and Jerzy Kątcki. "Ni-Based Ohmic Contacts to Silicon Carbide Examined by Electron Microscopy." Solid State Phenomena 186 (March 2012): 82–85. http://dx.doi.org/10.4028/www.scientific.net/ssp.186.82.

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Ni/Si multilayer contact structures to 4H-SiC after subsequent annealing steps are investigated with electron microscopy methods. After high temperature annealing step, specific defects in the contact structures are observed. The influence of phase transformations during annealings on the morphology on the contacts is discussed and the explanation of formation mechanism of voids within contact layer is proposed.
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Woo, Jong Soo, Chan-Hee Han, Byung-Deug Hong, and Jirou Harase. "Influence of the Secondary Recrystallization Temperature on the Sharpness of Goss Secondary Recrystallization Texture." Textures and Microstructures 32, no. 1-4 (January 1, 1999): 119–36. http://dx.doi.org/10.1155/tsm.32.119.

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Primary recrystallized Fe–3%Si specimens containing AI and nitrided were annealed intermittently with the heating rate of 15℃/h in 100% N2 atmosphere. The magnetic induction B8 was measured after each annealing. The onset of secondary recrystallization was detected by the rapid rise of B8. The maximum B8 obtained was about 1.94 T when the onset temperature of the secondary recrystallization was around 1075℃ regardless of the initial grain size or nitrogen content.The same primary specimens were coated with MgO and annealed with the same heating rate in 5% H2–N2. The maximum B8 obtained was nearly same as with the above annealing condition, however, the initial grain size and nitrogen content was quite contrary in this annealing. The difference in the optimum grain size and nitrogen content for obtaining the highest B8 between both annealings was explained on the assumption that ∑9 boundaries become most mobile at 1075℃ regardless of the annealing methods. Based on this finding, the possibility of producing grain oriented silicon steel without hot band annealing and nitriding treatment was shown.
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Khorasani, AmirMahyar, Ian Gibson, Moshe Goldberg, and Guy Littlefair. "On the role of different annealing heat treatments on mechanical properties and microstructure of selective laser melted and conventional wrought Ti-6Al-4V." Rapid Prototyping Journal 23, no. 2 (March 20, 2017): 295–304. http://dx.doi.org/10.1108/rpj-02-2016-0022.

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Purpose The purpose of this study was to conduct various heat treatments (HT) such as stress relief annealing, mill annealing, recrystallization (α + β) annealing and β annealing followed by furnace cooling (FC) that were implemented to determine the effect of these on mechanical properties and the microstructure of selective laser melted and wrought samples. The mentioned annealings have been carried out to achieve the related standards in the fabrication of surgery implants. Design/methodology/approach In this paper, based on F2924-14 ASTM standard SLM and conventionally wrought parts were prepared. Then HT was performed and different characteristics such as microstructure, mechanical properties, macro-hardness and fracture surface for selective laser melted and wrought parts were analysed. Findings The results show that the high cooling rate in selective laser melting (SLM) generates finer grains. Therefore, tensile strength and hardness increase along with a reduction in ductility was noticed. Recrystallization annealing appears to give the best combination of ductility, strength and hardness for selective laser melted parts, whilst for equivalent wrought samples, increasing HT temperature results in reduction of mechanical properties. Originality/value The contributions of this paper are discussing the effect of different annealing on mechanical properties and microstructural evolution based on new ASTM standards for selective laser melted samples and comparing them with wrought parts.
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Adawi Awdish, Rana Lee. "Annealing." International Journal of Whole Person Care 10, no. 2 (June 19, 2023): 6–9. http://dx.doi.org/10.26443/ijwpc.v10i2.383.

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Makogon, Yu N., O. P. Pavlova, Sergey I. Sidorenko, G. Beddies, and A. V. Mogilatenko. "Influence of Annealing Environment and Film Thickness on the Phase Formation in the Ti/Si(100) and (Ti +Si)/Si(100) Thin Film Systems." Defect and Diffusion Forum 264 (April 2007): 159–62. http://dx.doi.org/10.4028/www.scientific.net/ddf.264.159.

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Influence of an annealing environment and film thickness on the phase formation in the Ti(30 nm)/Si(100), [(Ti+Si) 200 nm]/Si(100) thin film systems produced by magnetron sputtering and the Ti(200 nm)/Si(100) thin film system produced by electron-beam sputtering were investigated by X-ray and electron diffraction, Auger electron spectroscopy (AES), secondary ion mass-spectrometry (SIMS) and resistivity measurements. Solid-state reactions in the thin film systems under investigation were caused by diffusion processes during annealing in the different gas environments: under vacuum of 10-4 - 10-7 Pa, flow of nitrogen and hydrogen. It is shown that the decrease of Ti layer thickness from 200 to 30 nm in the Ti/Si(100) film system causes the increase of the transition temperature of the metastable C49 TiSi2 phase to the stable C54 TiSi2 phase up to 1070 K at vacuum annealing. During annealing in the nitrogen flow of the Ti(30 nm)/Si(100) thin film system the C49 TiSi2 is the first crystal phase which is formed at 870 K. For annealings of the [(Ti+Si) 200 nm]/Si(100) thin film system by impulse heating method or for furnace annealings in inert gas atmosphere of N2, Ar, H or higher vacuum (10-5 Pa) the crystallization process has two stages: the first metastable C49 TiSi2 phase is formed at 870 K and then at higher temperatures it is transformed to the stable C54 TiSi2 phase.
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Morita, Satoshi. "Faster Annealing Schedules for Quantum Annealing." Journal of the Physical Society of Japan 76, no. 10 (October 15, 2007): 104001. http://dx.doi.org/10.1143/jpsj.76.104001.

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Gornakova, Alena S., Boris B. Straumal, Alexander I. Tyurin, Natalia S. Afonikova, Alexander V. Druzhinin, Gregory S. Davdian, and Askar R. Kilmametov. "Phase Transformations Caused by Heat Treatment and High-Pressure Torsion in TiZrHfMoCrCo Alloy." Materials 16, no. 4 (February 5, 2023): 1354. http://dx.doi.org/10.3390/ma16041354.

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In this work the high-entropy alloy studied contained six components, Ti/Zr/Hf/Mo/Cr/Co, and three phases, namely one phase with body-centered cubic lattice (BCC) and two Laves phases C14 and C15. A series of annealings in the temperature range from 600 to 1000 °C demonstrated not only a change in the microstructure of the TiZrHfMoCrCo alloy, but also the modification of phase composition. After annealing at 1000 °C the BCC phase almost fully disappeared. The annealing at 600 and 800 °C leads to the formation of new Laves phases. After high-pressure torsion (HPT) of the as-cast TiZrHfMoCrCo alloy, the grains become very small, the BCC phase prevails, and C14 Laves phase completely disappears. This state is similar to the state after annealing at high effective temperature Teff. The additional annealing at 1000 °C after HPT returns the phase composition back to the state similar to that of the as-cast alloy after annealing at 1000 °C. At 1000 °C the BCC phase completely wets the C15/C15 grain boundaries (GBs). At 600 and 800 °C the GB wetting is incomplete. The big spread of nanohardness and Young’s modulus for the BCC phase and (C15 + C14) Laves phases is observed.
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Bonilla-Petriciolet, Adrián, Juan Carlos Tapia-Picazo, Carlos Soto-Becerra, and Javier Gerson Zapiain-Salinas. "Perfiles de comportamiento numérico de los métodos estocásticos simulated annealing y very fast simulated annealing en cálculos termodinámicos." Ingeniería, investigación y tecnología 12, no. 1 (January 1, 2011): 51–62. http://dx.doi.org/10.22201/fi.25940732e.2011.12n1.006.

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Gokhfeld, N. V., A. V. Okulov, O. S. Iusupova, V. G. Pushin, and V. P. Pilyugin. "Mechano-structural characteristics of Cu72Au24Ag4 alloy subjected to severe plastic deformation combined with subsequent heat treatment." E3S Web of Conferences 389 (2023): 01068. http://dx.doi.org/10.1051/e3sconf/202338901068.

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Mechano-structural characteristics of the synthesized Cu72Au24Ag4 and commercial Cu59Au33Ag7Fe1 alloys subjected to preliminary severe plastic deformations (SPDs) by high-pressure torsion combined with subsequent annealings at different temperatures and holding times were studied by means of scanning and transmission electron microscopy as well as durometry. Due to SPDs, it was possible to refine the structure of the investigated alloys to submicro- and nanostructural state. As a result of certain annealing regimes, the atomic ordering processes began to occur in the alloys. The microstructural features and mechanical properties after preliminary SPDs and subsequent annealings were compared for the studied alloys. Influence of the deformation degree and subsequent annealing regimes on the kinetics of atomic ordering and changes in mechanical properties was shown. In addition, it was found the inhibition effect of the nanograin growth due to the barrier action of dispersed precipitates.
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Giannazzo, Filippo, Martin Rambach, Dario Salinas, Fabrizio Roccaforte, and Vito Raineri. "Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy." Materials Science Forum 615-617 (March 2009): 457–60. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.457.

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We studied the evolution of the electrical activation with annealing temperature and time in 4H-SiC implanted with Al ions at room temperature (RT). An accurate comparison between the electrical activation data obtained by FPP and SCM was carried out. The dependence of the electrically active profiles on annealing time was studied during isothermal (Tann=1600 °C) annealings for times ranging from 0 (spike anneal) to 30 min. By performing isochronal (t=30 min) processes at temperatures from 1550 to 1650 °C, the effect of the annealing temperature on the net doping concentration profiles was studied. Moreover, the activation energy (6.30.3 eV) associated to the process was extracted from the Arrhenius plot of the net active dose. Finally, the effect of the different thermal budgets on the roughening of the Al implanted 4H-SiC surface was also investigated in details by atomic force microscopy.
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Dissertations / Theses on the topic "Annealing"

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Araujo, Haroldo Alexandre de. "Algoritmo Simulated Annealing." Florianópolis, SC, 2001. http://repositorio.ufsc.br/xmlui/handle/123456789/80386.

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Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Ciência da Computação.
Made available in DSpace on 2012-10-18T13:35:55Z (GMT). No. of bitstreams: 1 225675.pdf: 796704 bytes, checksum: 892abc8468e4e7c6715b6c3f2de50e51 (MD5)
A busca por soluções de problemas por meio do computador é o tema central da ciência da computação, relevante para grande parte da ciência e de suas aplicações tecnológicas. Essa busca, certamente, vai na direção de algoritmos eficientes e exatos mas que nem sempre boas soluções podem ser encontradas para muitos problemas de ordem prática, principalmente, no que diz respeito a tempo de execução. Existem problemas, dentre estes, os de otimização combinatorial que apresentam uma peculiaridade com relação aos outros, que é a grande dificuldade de se obter soluções exatas num tempo computacional aceitável. Atualmente, as novas técnicas, especialmente as metaheurísticas, tais como: Tabu Search, Simulated Annealing, Algoritmos Genéticos e Redes Neurais, vêm conseguindo sucesso na solução de problemas de otimização combinatorial, que mesmo não apresentando soluções exatas têm mostrado bastante eficiência com suas soluções aproximadas. Este trabalho propõe um novo método baseado no algoritmo Simulated Annealing (SA) através de mudanças bruscas nos valores da temperatura que são retiradas de múltiplas faixas, ao contrário do SA básico, onde esses valores são obtidos de uma faixa única, ou seja, num SA básico, os valores assumidos pela temperatura saem de um intervalo, partindo de um valor inicial, e vão diminuindo até um valor final. Tais mudanças bruscas acontecem exatamente no momento da mudança de faixa, pois o valor da temperatura que no final de uma faixa é pequeno, assume um valor correspondente a temperatura inicial da faixa seguinte, normalmente, bem maior. Posto a prova, com instâncias euclidianas do Problema Caixeiro Viajante, que é um problema de otimização combinatorial de difícil solução, o método apresenta resultados bastante satisfatórios quando comparado com o SA básico.
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Sakhavat, Tamim, Haithem Grissa, and Ziyad Abdalrahman. "Simulated Annealing : Simulated Annealing for Large Scale Optimization in Wireless Communications." Thesis, Linnéuniversitetet, Institutionen för datavetenskap, fysik och matematik, DFM, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:lnu:diva-24606.

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In this thesis a simulated annealing algorithm is employed as an optimization tool for a large scale optimization problem in wireless communication. In this application, we have 100 places for transition antennas and 100 places for receivers, and also a channel between each position in both areas. Our aim is to nd, say the best 3 positions there, in a way that the channel capacity is maximized. The number of possible combinations is huge. Hence, nding the best channel will take a very long time using an exhaustive search. To solve this problem, we use a simulated annealing algorithm and estimate the best answer. The simulated annealing algorithm chooses a random element, and then from the local search algorithm, compares the selected element with its neighbourhood. If the selected element is the maximum among its neighbours, it is a local maximum. The strength of the simulated annealing algorithm is its ability to escape from local maximum by using a random mechanism that mimics the Boltzmann statistic.
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Kift, Rebecca Louise. "Intermetallic compounds by reductive annealing." Thesis, University of Hull, 2010. http://hydra.hull.ac.uk/resources/hull:4452.

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The majority of the work described in this thesis focuses on the development of a new synthetic route to binary and ternary intermetallic compounds, which avoids the need for reaction at very high temperatures, multi-step reactions, reaction under vacuum and/or the synthesis of precursors. The route was adapted from a synthetic route reported for the synthesis of ternary and quaternary nitrides adopting the ε-carbide and filled β-manganese structures, where mixed metal oxides were reduced under an atmosphere of 10% hydrogen in nitrogen. In this work, binary intermetallic compounds including metal antimonides, germanides and bismuthides were prepared by reducing mixed metal oxides under 10% hydrogen in argon. A variety of high purity antimonides were synthesised, including NiSb, CoSb, CoSb3, Cu2Sb and SnSb. Tailoring of some of the properties of these antimonides was attempted by introducing other atoms into the crystal structures, thereby forming ternary compounds. The most notable ternary antimonides prepared include the solid solution of NiSb in CoSb, and the solid solution of RhSb3 in CoSb3. The Sb-Sb bond lengths in the solid solution of NiSb in CoSb display an unexpected trend, passing through a minimum. Reasons for this based on electronic grounds are suggested. Notably the Te-Te bond length within the solid solution of NiTe in CoTe does not display this variation. The solid solution of RhSb3 in CoSb3 is potentially very useful as the introduction of rhodium into the structure may alter the thermoelectric behaviour of the material. However, thermoelectric measurements on the compounds are yet to be carried out. Other work described in this thesis focuses on attempts to synthesise transition metal nitrides, firstly by extending a synthetic route reported for the synthesis of ε-carbide and filled β-manganese nitrides by introducing germanium into Fe3Mo3N, Co3Mo3N and the hypothetical compound "Ni3Mo3N", and secondly by the thermal treatment of potential precursors to binary transition metal nitrides. The synthesis and magnetic properties of Fe2GeMo3N, Co2GeMo3N and Ni2GeMo3N are discussed, and the synthesis of solid solutions of Fe2GeMo3N and Ni2GeMo3N in Co2GeMo3N are described. In addition, experiments to determine whether a small interstitial (in this case nitrogen) is needed to stabilise certain compounds adopting the ε-carbide and filled β-manganese structures are described. The preparation, crystal structures and thermal treatment of metal urea complexes as potential precursors to binary nitrides are also discussed. Two of the metal urea complexes synthesised, ([Cr(urea)4(H2O)2][NO3]3 and [Fe(urea)6][NO3]), are particularly interesting: [Cr(urea)4(H2O)2][NO3]3 crystallises in a primitive, but close to C-centred unit cell, and [Fe(urea)6][NO3]3 crystallises in a C-centred cell which is related by a five-fold expansion to a smaller pseudo C-centred cell previously reported for the same structure.
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Thompson, J. M. "Examination scheduling using simulated annealing." Thesis, Swansea University, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.639229.

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Recent increases, both in student numbers and choice of subjects, have made the problem of producing university examination timetables increasingly difficult. Additionally, there is pressure to give students free periods between exams to aid their revision. Many other constraints may also be imposed on the timetable. The aim of this research is to investigate the usefulness of simulated annealing, as a basis of an efficient solution method, for this problem. The examination timetabling problem is shown to be equivalent to the graph colouring problem, with side constraints. This model allows several of the constraints to be included directly, thereby simplifying the problem. The colouring problem is solved in two phases, with the first obtaining a feasible colouring and the second optimising further objectives while maintaining feasibility. Simulated annealing is used to solve each phase and computational experience demonstrates that this results in high quality solutions. In phase two, only feasible solutions, that is those which satisfy the binding constraints, are considered. This may result in the solution space being disconnected or sparsely connected, possibly reducing solution quality. To overcome this problem, three means of reconnecting the solution space have been developed. The first widens the neighbourhood to include more diverse solutions. The second attempts to search disjoint components of the solution space individually, using a diversification function to guide the search. The final method reintroduces solutions that break the binding constraints to the solution space while penalising them in the cost function. Extending the neighbourhood using a graph theoretic entity called a Kempe chain significantly increases solution quality. Several explanations have been investigated. This research shows that a combination of a phased approach and Kempe chains forms the basis of an effective and flexible simulated annealing based examination timetabling system, which has been implemented successfully at a U.K. university.
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Neil, John Paul. "Simulated annealing based datapath synthesis." Thesis, University of Edinburgh, 1994. http://hdl.handle.net/1842/12715.

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The behavioural synthesis procedure aims to produce optimised register-transfer level datapath descriptions from an algorithmic problem definition, normally expressed in a high-level programming language. The procedure can be partitioned into a number of subtasks linked by a serial synthesis flow. Graph theoretic algorithms can be used to provide solutions to these subtasks. Many of these techniques, however, belong to a class of algorithm for which there is no exact solution computable in polynomial time. To overcome this problem, heuristics are used to constrain the solution space. The introduction of heuristics can cause the algorithm to terminate in a local cost minimum. This thesis supports a global formulation of the behavioural synthesis problem. An algorithm which can avoid local minima, simulated annealing forms the basis of the synthesis system reported. A modular software system is presented in support of this approach. A novel data structure enables multiple degrees of optimisation freedom within the datapath solution space. Synthesis primitives, tightly coupled to a solution costing mechanism directed towards the prevalent datapath implementation technologies, form the core of the system. The software is exercised over small and large-scale synthesis benchmarks. The synthesis paradigm is extended by the provision of optimisation routines capable of supporting the generation of functional pipelines.
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Arvidsson, Elisabeth. "Optimization algorithms for Quantum Annealing." Thesis, KTH, Fysik, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-279447.

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Cevikbas, Safak Burak. "Visibility Based Prefetching With Simulated Annealing." Master's thesis, METU, 2008. http://etd.lib.metu.edu.tr/upload/12609324/index.pdf.

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Complex urban scene rendering is not feasible without culling invisible geometry before the rendering actually takes place. Visibility culling can be performed on predefined regions of scene where for each region a potential visible set of scene geometry is computed. Rendering cost is reduced since instead of a bigger set only a single PVS which is associated with the region of the viewer is rendered. However, when the viewer leaves a region and enters one of its neighbors, disposing currently loaded PVS and loading the new PVS causes stalls. Prefetching policies are utilized to overcome stalls by loading PVS of a region before the viewer enters it. This study presents a prefetching method for interactive urban walkthroughs. Regions and transitions among them are represented as a graph where the regions are the nodes and transitions are the edges. Groups of nodes are formed according to statistical data of transitions and used as the prefetching policy. Some heuristics for constructing groups of nodes are developed and Simulated Annealing is utilized for constructing optimized groups based on developed heuristics. The proposed method and underlying application of Simulated Annealing are customized for minimizing average transition cost.
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Färm, Petra. "Integrated Logic Synthesis Using Simulated Annealing." Doctoral thesis, KTH, Mikroelektronik och Informationsteknik, IMIT, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4257.

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A conventional logic synthesis flow is composed of three separate phases: technologyindependent optimization, technology mapping, and technology dependentoptimization. A fundamental problem with such a three-phased approach is thatthe global logic structure is decided during the first phase without any knowledge ofthe actual technology parameters considered during later phases. Although technologydependent optimization algorithms perform some limited logic restructuring,they cannot recover from fundamental mistakes made during the first phase, whichoften results in non-satisfiable solutions.We present a global optimization approach combining technology independentoptimization steps with technology dependent objectives in an annealing-basedframework. We prove that, for the presented move set and selection distribution, detailedbalance is satisfied and thus the annealing process asymptotically convergesto an optimal solution. Furthermore, we show that the presented approach cansmoothly trade-off complex, multiple-dimensional objective functions and achievecompetitive results. The combination of technology independent and technologydependent objectives is handled through dynamic weighting. Dynamic weightingreflects the sensitivity of the local graph structures with respect to the actual technologyparameters such as gate sizes, delays, and power levels. The results showthat, on average, the presented advanced annealing approach can improve the areaand delay of circuits optimized using the Boolean optimization technique providedby SIS with 11.2% and 32.5% respectively.Furthermore, we demonstrate how the developed logic synthesis framework canbe applied to two emerging technologies, chemically assembled nanotechnology andmolecule cascades. New technologies are emerging because a number of physicaland economic factors threaten the continued scaling of CMOS devices. Alternativesto silicon VLSI have been proposed, including techniques based on molecularelectronics, quantum mechanics, and biological processes. We are hoping that ourresearch in how to apply our developed logic synthesis framework to two of theemerging technologies might provide useful information for other designers movingin this direction.
QC 20100709
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Depree, Nicholas Brian. "Mathematical modelling of an annealing furnace." Thesis, University of Auckland, 2010. http://hdl.handle.net/2292/5855.

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The metal coating line at New Zealand Steel relies on a large electric radiant furnace to heat steel strip before hot-dip galvanising in a continuous process. The temperature evolution of the strip inside the furnace is vital in ensuring the speci ed mechanical properties are achieved for a range of steel products. Ductile products require high temperatures su cient to cause recrystallisation of the steel microstructure, while stronger products must be heated without causing recrystallisation. Strip dimensions and desired properties are changed often and irregularly during operation, and these changes and associated furnace control actions cause changes in furnace and strip temperatures and rate of heat transfer over several di erent time scales. Accurate control of temperature is di cult because temperature measurement devices are strongly a ected by re ected radiation in the furnace cavity. The furnace is often operating during transient temperature conditions, as control actions take e ect very slowly compared to the the rate of change of operational targets. Understanding of the transient behaviour of this system of interrelated, nonlinear variables can be improved using modelling to calculate furnace and strip temperatures as a result of control actions in real time, which cannot otherwise be measured or predicted. It is shown that a three-dimensional model is capable of accurately calculating furnace temperatures changing over both time and location, requiring minimal simpli cation of the physical system, but is computationally expensive. Radiative heat exchange in the furnace cavity causes signi cantly increased temperature along the edges of the steel strip, which can cause reject product due to localised softening. It was found that furnace thermocouples are strongly a ected by re ected radiation, so that furnace wall temperatures be may signi cantly hotter than measured. A simpli ed, coupled temperature-metallurgical model was shown to accurately calcui late both furnace and strip temperatures and metallurgical changes, while the 3D model provides understanding of e ects not explicitly modelled in the simpli ed model. The simpli ed model is used for optimisation of furnace operational parameters, to improve plant throughput and energy e ciency while maintaining desired metallurgical properties, which is demonstrated by application to common products at NZ Steel.
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Allred, Kory J. "Horizontal alignment optimization using simulated annealing /." Available to subscribers only, 2006. http://proquest.umi.com/pqdweb?did=1240703751&sid=3&Fmt=2&clientId=1509&RQT=309&VName=PQD.

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Books on the topic "Annealing"

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R. H. J. M. Otten. The Annealing Algorithm. Boston, MA: Springer US, 1989.

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Vidal, René V. V., ed. Applied Simulated Annealing. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-46787-5.

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Rebohle, Lars, Slawomir Prucnal, and Denise Reichel. Flash Lamp Annealing. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-23299-3.

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Otten, R. H. J. M., and L. P. P. P. van Ginneken. The Annealing Algorithm. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4613-1627-5.

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Evans, Michael J. Chaining via annealing. Toronto: University of Toronto, Dept. of Statistics, 1988.

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Ginneken, L. P. P. P. van., ed. The annealing algorithm. Boston: Kluwer Academic Publishers, 1989.

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Valqui, Vidal René Victor, ed. Applied simulated annealing. Berlin: Springer-Verlag, 1993.

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Robert, Azencott, ed. Simulated annealing: Parallelization techniques. New York: Wiley, 1992.

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L, Aarts E. H., ed. Simulated annealing: Theory and applications. Dordrecht: D. Reidel, 1987.

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M, Hatherly, ed. Recrystallization and related annealing phenomena. Oxford, OX, UK: Pergamon, 1995.

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Book chapters on the topic "Annealing"

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Yao, Tianming, Zhongquan Sui, and Srinivas Janaswamy. "Annealing." In Physical Modifications of Starch, 37–49. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-0725-6_3.

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Arnemann, J. "Annealing." In Springer Reference Medizin, 135–36. Berlin, Heidelberg: Springer Berlin Heidelberg, 2019. http://dx.doi.org/10.1007/978-3-662-48986-4_3437.

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Arnemann, J. "Annealing." In Lexikon der Medizinischen Laboratoriumsdiagnostik, 1. Berlin, Heidelberg: Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-662-49054-9_3437-1.

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Yao, Tianming, Zhongquan Sui, and Srinivas Janaswamy. "Annealing." In Physical Modifications of Starch, 73–89. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-5390-5_5.

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Bryson, William E. "Annealing." In Heat Treatment, 87–90. München: Carl Hanser Verlag GmbH & Co. KG, 2015. http://dx.doi.org/10.3139/9781569904862.015.

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Gooch, Jan W. "Annealing." In Encyclopedic Dictionary of Polymers, 41. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_672.

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Bryson, William E. "Annealing." In Heat Treatment, 87–90. München, Germany: Carl Hanser Verlag GmbH & Co. KG, 2015. http://dx.doi.org/10.1007/978-1-56990-486-2_16.

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Suzhi, Cheng, and Xu Kuangdi. "Annealing." In The ECPH Encyclopedia of Mining and Metallurgy, 1–7. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-19-0740-1_867-1.

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Du, Ke-Lin, and M. N. S. Swamy. "Simulated Annealing." In Search and Optimization by Metaheuristics, 29–36. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-41192-7_2.

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Suwas, Satyam, and Ranjit Kumar Ray. "Annealing Texture." In Engineering Materials and Processes, 143–77. London: Springer London, 2014. http://dx.doi.org/10.1007/978-1-4471-6314-5_6.

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Conference papers on the topic "Annealing"

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Lee, Yao-Jen, T. C. Cho, S. S. Chuang, F. K. Hsueh, Y. L. Lu, P. J. Sung, S. J. Chen, et al. "Microwave annealing." In ION IMPLANTATION TECHNOLOGY 2012: Proceedings of the 19th International Conference on Ion Implantation Technology. American Institute of Physics, 2012. http://dx.doi.org/10.1063/1.4766505.

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Fleischer, Mark. "Simulated annealing." In the 27th conference. New York, New York, USA: ACM Press, 1995. http://dx.doi.org/10.1145/224401.224457.

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Galindo, Oscar, and Vladik Kreinovich. "What Is the Optimal Annealing Schedule in Quantum Annealing." In 2020 IEEE Symposium Series on Computational Intelligence (SSCI). IEEE, 2020. http://dx.doi.org/10.1109/ssci47803.2020.9308407.

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de Falco, D., E. Pertoso, and D. Tamascelli. "Dissipative Quantum Annealing." In Proceedings of the 29th Conference. WORLD SCIENTIFIC, 2010. http://dx.doi.org/10.1142/9789814295437_0020.

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Jafari, Aref, Mehdi Rezagholizadeh, Pranav Sharma, and Ali Ghodsi. "Annealing Knowledge Distillation." In Proceedings of the 16th Conference of the European Chapter of the Association for Computational Linguistics: Main Volume. Stroudsburg, PA, USA: Association for Computational Linguistics, 2021. http://dx.doi.org/10.18653/v1/2021.eacl-main.212.

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Carvalho, Vinícius Nunes, and Sezimária de Fátima Pereira Saramago. "IMPROVED SIMULATED ANNEALING." In Congresso Nacional de Matemática Aplicada à Indústria. São Paulo: Editora Edgard Blücher, 2015. http://dx.doi.org/10.5151/mathpro-cnmai-0041.

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Szu, Harold. "Fast simulated annealing." In AIP Conference Proceedings Volume 151. AIP, 1986. http://dx.doi.org/10.1063/1.36250.

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Singh, Nishant, and Bahniman Ghosh. "Simulated annealing Vs. Genetic Simulated Annealing for automatic transistor sizing." In 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE). IEEE, 2012. http://dx.doi.org/10.1109/smelec.2012.6417190.

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Matsuba, I., and H. Masui. "Asymptotic behaviors of simulated annealing and mean-field approximate annealing." In 1991 IEEE International Joint Conference on Neural Networks. IEEE, 1991. http://dx.doi.org/10.1109/ijcnn.1991.170518.

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Timans, P. J., Y. Z. Hu, Y. Lee, J. Gelpey, S. McCoy, W. Lerch, S. Paul, et al. "Optimization of diffusion, activation and damage annealing in millisecond annealing." In 2008 16th International Conference on Advanced Thermal Processing of Semiconductors (RTP). IEEE, 2008. http://dx.doi.org/10.1109/rtp.2008.4690539.

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Reports on the topic "Annealing"

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King, James A., and Michael T. Benson. Uranium Annealing Analysis. Office of Scientific and Technical Information (OSTI), September 2015. http://dx.doi.org/10.2172/1482125.

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Bandyopadhyay, S., S. K. Pal, and C. A. Murthy. Simulated Annealing Based Pattern Classification. Fort Belvoir, VA: Defense Technical Information Center, May 1998. http://dx.doi.org/10.21236/ada358039.

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Cole, James B., and David H. Gerstman. Image Recovery by Simulated Annealing. Fort Belvoir, VA: Defense Technical Information Center, November 1990. http://dx.doi.org/10.21236/ada230655.

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Rose, Jonathan, Wolfgang Klebsch, and Juergen Wolf. Temperature Measurement of Simulated Annealing Placements. Fort Belvoir, VA: Defense Technical Information Center, January 1987. http://dx.doi.org/10.21236/ada207229.

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Gelfand, Saul B., and Sanjoy K. Mitter. Analysis of Simulated Annealing for Optimization. Fort Belvoir, VA: Defense Technical Information Center, September 1985. http://dx.doi.org/10.21236/ada170174.

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Garcia Pintos Barcia, Luis. Speed Limits: From Thermodynamics to Annealing. Office of Scientific and Technical Information (OSTI), April 2023. http://dx.doi.org/10.2172/1969228.

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Garcia Pintos Barcia, Luis. Speed Limits: From Thermodynamics to Annealing. Office of Scientific and Technical Information (OSTI), December 2022. http://dx.doi.org/10.2172/1903526.

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Bender, Daniel A., Christopher DeRose, Andrew Lea Starbuck, Jason C. Verley, and Mark W. Jenkins. Precision Laser Annealing of Focal Plane Arrays. Office of Scientific and Technical Information (OSTI), September 2015. http://dx.doi.org/10.2172/1221519.

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Gardner, J. A., M. V. Rao, Y. L. Tian, O. W. Holland, G. Kelner, J. A. Jr Freitas, and I. Ahmad. Microwave annealing of ion implanted 6H-SiC. Office of Scientific and Technical Information (OSTI), May 1996. http://dx.doi.org/10.2172/244606.

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Heinisch, H. L. Stochastic annealing simulation of cascades in metals. Office of Scientific and Technical Information (OSTI), April 1996. http://dx.doi.org/10.2172/270462.

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