Journal articles: 'Anderson-Mott transition'

1

Belitz, D., and T. R. Kirkpatrick. "The Anderson-Mott transition." Reviews of Modern Physics 66, no. 2 (April 1, 1994): 261–380. http://dx.doi.org/10.1103/revmodphys.66.261.

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2

Ladieu, F., M. Sanquer, and J. P. Bouchaud. "Depinning transition in Mott-Anderson insulators." Physical Review B 53, no. 3 (January 15, 1996): 973–76. http://dx.doi.org/10.1103/physrevb.53.973.

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3

Dobrosavljević, V. "TYPICAL-MEDIUM THEORY OF MOTT–ANDERSON LOCALIZATION." International Journal of Modern Physics B 24, no. 12n13 (May 20, 2010): 1680–726. http://dx.doi.org/10.1142/s0217979210064563.

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The Mott and the Anderson routes to localization have long been recognized as the two basic processes that can drive the metal–insulator transition (MIT). Theories separately describing each of these mechanisms were discussed long ago, but an accepted approach that can include both has remained elusive. The lack of any obvious static symmetry distinguishing the metal from the insulator poses another fundamental problem, since an appropriate static order parameter cannot be easily found. More recent work, however, has revisited the original arguments of Anderson and Mott, which stressed that the key diference between the metal end the insulator lies in the dynamics of the electron. This physical picture has suggested that the "typical" (geometrically averaged) escape rate [Formula: see text] from a given lattice site should be regarded as the proper dynamical order parameter for the MIT, one that can naturally describe both the Anderson and the Mott mechanism for localization. This article provides an overview of the recent results obtained from the corresponding Typical-Medium Theory, which provided new insight into the the two-fluid character of the Mott–Anderson transition.

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4

Aguiar, M. C. O., V. Dobrosavljević, E. Abrahams, and G. Kotliar. "Disorder screening near the Mott–Anderson transition." Physica B: Condensed Matter 403, no. 5-9 (April 2008): 1417–19. http://dx.doi.org/10.1016/j.physb.2007.10.213.

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5

Dobrosavljević, V., and G. Kotliar. "Mean Field Theory of the Mott-Anderson Transition." Physical Review Letters 78, no. 20 (May 19, 1997): 3943–46. http://dx.doi.org/10.1103/physrevlett.78.3943.

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6

Belitz, D., and T. R. Kirkpatrick. "Order parameter description of the Anderson-Mott transition." Zeitschrift f�r Physik B Condensed Matter 98, no. 4 (December 1995): 513–26. http://dx.doi.org/10.1007/bf01320853.

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7

Belitz, D., and T. R. Kirkpatrick. "Anderson-Mott transition as a quantum-glass problem." Physical Review B 52, no. 19 (November 15, 1995): 13922–35. http://dx.doi.org/10.1103/physrevb.52.13922.

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8

Kirkpatrick, T. R., and D. Belitz. "Anderson-Mott Transition as a Random-Field Problem." Physical Review Letters 74, no. 7 (February 13, 1995): 1178–81. http://dx.doi.org/10.1103/physrevlett.74.1178.

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9

SHANKAR, R. "SOLVABLE MODEL OF A METAL-INSULATOR TRANSITION." International Journal of Modern Physics B 04, no. 15n16 (December 1990): 2371–94. http://dx.doi.org/10.1142/s0217979290001121.

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A solvable model of d = 1 spinless fermions at half-filling which exhibits a Mott transition is studied in detail. Many response functions are computed: at zero and nonzero temperatures, in the insulating and metallic sites, at the transition, and at q ≃ 0, 2k F . Some quantities are computed exactly, others only upto a scale factor. Some results are old, but mentioned here for completeness. Some are rederived using new tools such as conformal invariance. The rest are new. Next, the effect of randomness on the Mott state is explored. It is found, on the basis of Imry-Ma type arguments that no matter how large the gap is, the Mott insulator turns into an Anderson insulator immediately.

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10

Belitz, D., and T. R. Kirkpatrick. "Anderson-Mott transition in a magnetic field: Corrections to scaling." Physical Review B 62, no. 3 (July 15, 2000): 1655–59. http://dx.doi.org/10.1103/physrevb.62.1655.

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11

Byczuk, Krzysztof, Walter Hofstetter, and Dieter Vollhardt. "ANDERSON LOCALIZATION VS. MOTT–HUBBARD METAL–INSULATOR TRANSITION IN DISORDERED, INTERACTING LATTICE FERMION SYSTEMS." International Journal of Modern Physics B 24, no. 12n13 (May 20, 2010): 1727–55. http://dx.doi.org/10.1142/s0217979210064575.

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We review recent progress in our theoretical understanding of strongly correlated fermion systems in the presence of disorder. Results were obtained by the application of a powerful nonperturbative approach, the dynamical mean-field theory (DMFT), to interacting disordered lattice fermions. In particular, we demonstrate that DMFT combined with geometric averaging over disorder can capture Anderson localization and Mott insulating phases on the level of one-particle correlation functions. Results are presented for the ground state phase diagram of the Anderson–Hubbard model at half-filling, both in the paramagnetic phase and in the presence of antiferromagnetic order. We find a new antiferromagnetic metal which is stabilized by disorder. Possible realizations of these quantum phases with ultracold fermions in optical lattices are discussed.

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12

PETER, A. JOHN. "EFFECT OF MOTT TRANSITION WITH DIFFERENT DIELECTRIC FUNCTIONS IN LOW-DIMENSIONAL SEMICONDUCTOR SYSTEMS." Modern Physics Letters B 22, no. 08 (March 30, 2008): 611–20. http://dx.doi.org/10.1142/s0217984908015085.

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Ionization energies of a GaAs/Ga 1-x Al x As superlattice system with finite and infinite barriers are investigated with different dielectric screening functions within the effective mass approximation. Within the one-electron approximation the occurrence of Mott transition is seen when the binding energy of a donor vanishes. While the Thomas–Fermi screening function does not admit the Mott transition below a well-width around 60 Å,1,2 the Hartree–Fock screening function with exchange and correlation effects included pushes the critical well-width to a value around 20 Å. The Lindhard screening function also gives the same results. The effects of Anderson localization and exchange and correlation in the Hubbard model are included in our model. It is found that the ionization energy (i) decreases as well-width increases, (ii) decreases when well-width increases and (iii) the critical concentration at which the metal-insulator transition occurs is lowered when well dimensions are reduced. All the calculations have been carried out with finite and infinite barriers and the results are compared with available data in the literature.

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13

Kuchinskii, E. Z., I. A. Nekrasov, and M. V. Sadovskii. "Mott-Hubbard transition and Anderson localization: A generalized dynamical mean-field theory approach." Journal of Experimental and Theoretical Physics 106, no. 3 (March 2008): 581–96. http://dx.doi.org/10.1134/s1063776108030187.

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14

Tran, Minh-Tien. "Mott-Hubbard-Anderson Metal-Insulator Transition in the Falicov-Kimball Model with Local Disorder." Journal of the Korean Physical Society 53, no. 9(6) (December 15, 2008): 3613–18. http://dx.doi.org/10.3938/jkps.53.3613.

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15

Prati, Enrico, Masahiro Hori, Filippo Guagliardo, Giorgio Ferrari, and Takahiro Shinada. "Anderson–Mott transition in arrays of a few dopant atoms in a silicon transistor." Nature Nanotechnology 7, no. 7 (July 2012): 443–47. http://dx.doi.org/10.1038/nnano.2012.94.

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16

PETER, A. JOHN. "METAL–INSULATOR TRANSITION IN A QUASI-LOW-DIMENSIONAL SEMICONDUCTOR SYSTEM." International Journal of Modern Physics B 17, no. 30 (December 10, 2003): 5725–35. http://dx.doi.org/10.1142/s021797920302332x.

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Metal–Insulator transition using exact quasi dielectric functions is investigated for a shallow donor in an isolated well of GaAs/Ga 1-x Al s As superlattice system within the effective mass approximation. Vanishing of the donor ionization energy as a function of well width and the donor concentration suggests that no transition is possible below a well width of 50 Å supporting the scaling theory of localization. The effects of Anderson localization, exchange and correlation in the Hubbard model are included in a simple way. The relationship between the present model and the Mott criterion in terms of Hubbard model is also brought out. The critical concentration is enhanced when a random distribution of impurities is considered. Results are compared with the existing data available and discussed in the light of existing literature.

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17

TAKESHIMA, MASUMI. "NON-BORN CALCULATION OF ZERO TEMPERATURE CONDUCTIVITY OF A DOPED SEMICONDUCTOR UNDER VARIOUS SCREENING MODELS." International Journal of Modern Physics B 06, no. 13 (July 10, 1992): 2423–38. http://dx.doi.org/10.1142/s0217979292001225.

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The zero temperature conductivity of a doped semiconductor is calculated by numerically solving the integral equation which is given as a formal solution of the impurity scattering problem. Here the free-carrier screening of the impurity potential is also discussed, giving a tentative model of the screening. Then the critical exponent for the relation between conductivity and carrier concentration is found to be 0.8 for uncompensated Si:P. The critical carrier concentration for the metal-insulator transition is also calculated for the model of Mott localization as compared with that of Anderson localization, showing largely different results.

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18

Dücker, H., Th Koslowski, W. von Messen, M. A. Tusch, and D. E. Logan. "The metal-insulator transition in disordered tungsten bronzes. Results of an Anderson-Mott-Hubbard model." Journal of Non-Crystalline Solids 205-207 (October 1996): 32–42. http://dx.doi.org/10.1016/s0022-3093(96)00426-7.

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19

Fujimoto, Satoshi, and Norio Kawakami. "Competition between the Mott transition and Anderson localization in one-dimensional disordered interacting electron systems." Physical Review B 54, no. 16 (October 15, 1996): R11018—R11021. http://dx.doi.org/10.1103/physrevb.54.r11018.

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20

PETER, A. JOHN. "EFFECTS OF VARIATIONAL PARAMETER IN THE STUDY OF METAL–INSULATOR TRANSITION IN A QUASI-TWO DIMENSIONAL SEMICONDUCTOR SYSTEM." International Journal of Modern Physics B 17, no. 31n32 (December 30, 2003): 5961–72. http://dx.doi.org/10.1142/s0217979203023574.

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Effects of variational parameters on different dielectric functions in the study of semiconductor–metal transition are investigated for a shallow donor in an isolated well of GaAs/Ga 1-x Al s As superlattice system within the effective mass approximation. Vanishing of the donor ionization energy as a function of well width and donor concentration suggests that no transition is possible below a well width of 30 Å supporting the scaling theory of localization. The effects of Anderson localization, exchange and correlation in the Hubbard model are included in a simple way. The relationship between the present model and the Mott criterion in terms of Hubbard model is also brought out. The critical concentration is enhanced when the Hartree–Fock dielectric function is used. Results are compared with the existing data available and discussed in the light of existing literature.

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21

Held, K., and R. Bulla. "Mott transition of the f-electron system in the periodic Anderson model with nearest neighbor hybridization." European Physical Journal B 17, no. 1 (August 2000): 7–10. http://dx.doi.org/10.1007/s100510070154.

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22

Amini, M., V. E. Kravtsov, and M. Müller. "Multifractality and quantum-to-classical crossover in the Coulomb anomaly at the Mott–Anderson metal–insulator transition." New Journal of Physics 16, no. 1 (January 17, 2014): 015022. http://dx.doi.org/10.1088/1367-2630/16/1/015022.

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23

Dücker, Hartmut, Wolfgang von Niessen, Thorsten Koslowski, Michael A. Tusch, and David E. Logan. "Three-band Anderson-Mott-Hubbard model for the metal-insulator transition in cubic disordered tungsten bronzesNaxWO3andNaxTayW1−yO3." Physical Review B 59, no. 2 (January 1, 1999): 871–90. http://dx.doi.org/10.1103/physrevb.59.871.

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24

Mikheev, Evgeny, Adam J. Hauser, Burak Himmetoglu, Nelson E. Moreno, Anderson Janotti, Chris G. Van de Walle, and Susanne Stemmer. "Tuning bad metal and non-Fermi liquid behavior in a Mott material: Rare-earth nickelate thin films." Science Advances 1, no. 10 (November 2015): e1500797. http://dx.doi.org/10.1126/sciadv.1500797.

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Resistances that exceed the Mott-Ioffe-Regel limit (known as bad metal behavior) and non-Fermi liquid behavior are ubiquitous features of the normal state of many strongly correlated materials. We establish the conditions that lead to bad metal and non-Fermi liquid phases in NdNiO3, which exhibits a prototype bandwidth-controlled metal-insulator transition. We show that resistance saturation is determined by the magnitude of Ni egorbital splitting, which can be tuned by strain in epitaxial films, causing the appearance of bad metal behavior under certain conditions. The results shed light on the nature of a crossover to a non-Fermi liquid metal phase and provide a predictive criterion for Anderson localization. They elucidate a seemingly complex phase behavior as a function of film strain and confinement and provide guidelines for orbital engineering and novel devices.

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25

WILSON, JOHN A. "THE CHEMICAL, NEGATIVE-U APPROACH TO HIGH TEMPERATURE SUPERCONDUCTIVITY." International Journal of Modern Physics B 03, no. 05 (May 1989): 691–710. http://dx.doi.org/10.1142/s0217979289000518.

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Data published over the past year is examined in the light of the on-site negative U modelling proposed earlier. The model emphasizes how one must proceed beyond mixed valence to consider closely the charge transfer fluctuation conditions between the two subsystems. The situation prevailing is an intermediate U situation, being one in proximity to the Mott-Anderson transition. The high level of p-d mixing, in the copper oxide superconductors is seen to favour charge- at the expense of spin-fluctuation mediation. The proposed mixed-valently seeded, disproportionation fluctuation induced pairing requires no modification to pass from discussion of the copper oxide to the bismuth oxide superconductors. The author continues to express his opinion that it is the photoemission data which are primarily being misinterpreted, thereby encouraging misinterpretation of the neutron spin scattering and related experiments, and continuing to attract many theorists towards various spin modellings of HTSC.

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26

PETER, A. JOHN. "THE EFFECT OF HYDROSTATIC PRESSURE ON METAL–INSULATOR TRANSITION IN QUANTUM WELL SEMICONDUCTOR SYSTEMS II." International Journal of Nanoscience 04, no. 01 (February 2005): 45–53. http://dx.doi.org/10.1142/s0219581x05002936.

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Using a variational procedure within the effective mass approximation, the ionization energies of a shallow donor in a quantum well (QW) of GaAs/Ga 1-x Al x As superlattice system under the influence of pressure with the exact dielectric function are obtained. The vanishing of ionization energy initiating Mott transition is observed within the one-electron approximation. The effects of Anderson localization using a simple model, and exchange and correlation in the Hubbard model are included in this model. It is found that the ionization energy (i) increases when well width increases for a given pressure, (ii) decreases and reaches a bulk value for a larger well width, (iii) increases with increasing external hydrostatic pressure for a given QW thickness, and (iv) the critical concentration at which the metal–insulator transition (MIT) occurs is increased when pressure is applied. It also is demonstrated that MIT is not possible in a hydrostatic pressure in a quantum well supporting scaling theory of localization. All the calculations have been carried out with finite and infinite barriers and the results are compared with available data in the literature.

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27

Москвин, А. С., and Ю. Д. Панов. "Электронно-дырочные димеры в "родительской" фазе квази-2D-купратов." Физика твердого тела 61, no. 9 (2019): 1603. http://dx.doi.org/10.21883/ftt.2019.09.48097.27n.

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One of the most important features of the parent cuprates such as La2CuO4, which predetermines their unusual behavior under non-isovalent substitution, is high ionic polarizability and proximity to the «polarization catastrophe». We show that at the same time parent cuprates are characterized by a charge transfer instability with the formation of a system of metastable dipole-active «Mott-Hubbard» excitons, or electron-hole (EH) dimers. Non-isovalent substitution shifts the phase equilibrium in the direction of condensation of EH-dimers and the formation of an inhomogeneous EH-liquid, in the simplest model, equivalent to a system of composite bosons. To effectively describe the electronic state of doped cuprates, it is proposed to use the S = 1 pseudospin formalism, which allows one to consider novel charge states of the Anderson RVB-type phase. The recombination of EH-dimers under a critically small value of the energy of local and nonlocal correlations leads to the transition of the system to the Fermi-liquid state.

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28

Sasaki, Takahiko. "Mott-Anderson Transition in Molecular Conductors: Influence of Randomness on Strongly Correlated Electrons in the κ-(BEDT-TTF)2X System." Crystals 2, no. 2 (May 8, 2012): 374–92. http://dx.doi.org/10.3390/cryst2020374.

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29

KISHINE, JUN-ICHIRO, and KENJI YONEMITSU. "DIMENSIONAL CROSSOVERS AND PHASE TRANSITIONS IN STRONGLY CORRELATED LOW-DIMENSIONAL ELECTRON SYSTEMS: RENORMALIZATION-GROUP STUDY." International Journal of Modern Physics B 16, no. 05 (February 20, 2002): 711–71. http://dx.doi.org/10.1142/s0217979202009962.

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Based on the perturbative renormalization-group (PRG) approach, we have examined interplay or competition between one-particle (1P) and two-particle (2P) processes in strongly correlated low-dimensional electron systems. Throughout the article, we use the Grassmann functional integral approach, since it has an advantage that the 1P degrees of freedom are incorporated in an explicit manner. We mainly discuss an array of chains weakly-coupled via interchain one-particle hopping, where the constituent chains, if isolated, have a strong-coupling fixed point, such as the Mott-insulator, spin-gap-metal, or Anderson-insulator fixed point. In such cases, quantum fluctuations evolving toward the low-energy limit strongly suppress the interchain 1P coherence, and consequently a phase transition from the incoherent metallic (ICM) phase becomes possible. This kind of competition plays a key role to elucidate the interplay of correlation and dimensionality effects in real quasi-one-dimensional (Q1D) materials in nature. As examples, we take up spin-density-wave (SDW) phase transitions in dimerized quarter-filled Hubbard chains to elucidate the nature of the magnetic phase transitions in the Q1D organic conductors, (TMTTF)2X and (TMTSF)2X. Dimensional crossover problems in Q1D Hubbard ladders are also discussed to describe the pressure-induced superconductivity in the doped ladder systems. Interplay of randomness, electron correlation, and dimensionality effects in weakly-coupled half-filled Hubbard chains with weak quenched random potentials is also studied. We also discuss some 2D electron systems where the two-loop renormalization-group procedure is well defined and works.

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30

Ricci, M., M. Trinquecoste, F. Auguste, R. Canet, P. Delhaes, C. Guimon, G. Pfister-Guillouzo, B. Nysten, and J. P. Issi. "Relationship between the structural organization and the physical properties of PECVD nitrogenated carbons." Journal of Materials Research 8, no. 3 (March 1993): 480–88. http://dx.doi.org/10.1557/jmr.1993.0480.

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By a Plasma Enhanced Chemical Vapor Deposition process (PECVD), we are able to prepare nitrogenated amorphous carbon materials around room temperature from methane and nitrogen gas as precursors. We have also used chlorine gas as an additive to reduce the hydrogen content of our samples. Starting from the “as-deposited” materials, we have investigated their thermal stability by successive heat treatments up to 1400 °C. These compounds suffer a weight loss mostly due to the hydrogen departure. They become nonfusible and it turns out that nitrogen, chemically bound to sp2 hybridized carbons, induces some changes in the physical properties. In order to understand the relationship between the local structural organization and the physical characteristics, we have investigated different spectroscopic techniques such as Nuclear Magnetic Resonance, IR Absorption, and X-ray Photoelectron Spectroscopy. We have also investigated several transport properties: (i) The dc electrical conductivity shows a kind of metal/insulator transition around 700 °C. The temperature dependence for the conductive samples gives evidence for a pseudogap associated with the presence of localized states, (ii) The thermal conductivity exhibits, for the as-deposited compound, a very low value varying slowly with temperature; its magnitude as well as its temperature dependence, characteristic of noncrystalline materials, are modified by the annealing process. Finally, an electronic band model is proposed, explaining the structural evolution through a kind of Mott–Anderson pseudotransition.

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31

DZHUMANOV, S., U. T. KURBANOV, and A. KURMANTAYEV. "POSSIBLE QUANTITATIVE CRITERIA FOR THE MOTT AND ANDERSON TRANSITIONS IN DOPED UNCOMPENSATED SYSTEMS." International Journal of Modern Physics B 21, no. 02 (January 20, 2007): 169–78. http://dx.doi.org/10.1142/s0217979207036552.

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Metal-insulator transitions (MITs) in doped uncompensated systems are investigated in the Mott–Hubbard and Anderson impurity models by considering the intercarrier correlation and screening effect of carriers in the same hydrogenic impurity center, the formation of the superlattices with different coordination numbers (z=6, 8 and 12) and by studying the effect of randomness in impurity distribution. We have obtained simple and quite general criteria for the Mott and Anderson transitions and used these criteria to describe quantitatively the correlation and disorder-induced MITs in doped semiconductors and high-T c cuprates. We examine the validity of the obtained criteria for the Mott and Anderson MITs in these doped systems. It is found that the newly derived criteria for the Mott MIT are well satisfied in doped semiconductors, but they cannot be used to describe the observed MITs in the hole-doped high-T c cuprates, whereas the newly derived criteria for the Anderson MIT are applicable equally to describe the MITs observed both in doped semiconductors (at weak and intermediate disorders) and in doped cuprates (at intermediate and strong disorders). The new criteria for the Anderson MIT are extended to the polaronic systems in p-type cuprates. Our results are in quantitative agreement with the existing well-established experimental data and shed more light on the different types of MITs that occur in doped uncompensated semiconductors and cuprates.

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32

Wang, Yue, Kyung Mun Kang, Minjae Kim, Hyang Keun Yoo, and Hyung Ho Park. "Methods for distinguishing Mott transitions from Anderson transitions." International Journal of Nanotechnology 15, no. 6/7 (2018): 493. http://dx.doi.org/10.1504/ijnt.2018.096340.

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33

Logan, David E., Martin R. Galpin, and Jonathan Mannouch. "Mott transitions in the periodic Anderson model." Journal of Physics: Condensed Matter 28, no. 45 (September 12, 2016): 455601. http://dx.doi.org/10.1088/0953-8984/28/45/455601.

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Shinaoka, Hiroshi, and Masatoshi Imada. "Theory of Electron Transport near Anderson–Mott Transitions." Journal of the Physical Society of Japan 79, no. 11 (November 15, 2010): 113703. http://dx.doi.org/10.1143/jpsj.79.113703.

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35

Byczuk, Krzysztof, Walter Hofstetter, and Dieter Vollhardt. "Mott–Hubbard and Anderson transitions in dynamical mean-field theory." Physica B: Condensed Matter 359-361 (April 2005): 651–53. http://dx.doi.org/10.1016/j.physb.2005.01.177.

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Hoang, Anh-Tuan, Thi-Hai-Yen Nguyen, and Duc-Anh Le. "Metal–insulator transitions of fermionic mixtures with mass imbalance in disordered optical lattice." Modern Physics Letters B 35, no. 21 (June 9, 2021): 2150357. http://dx.doi.org/10.1142/s0217984921503577.

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We study the metal–insulator transitions in the half-filled Anderson–Hubbard model with mass imbalance by the typical medium theory using the equation of motion method as an impurity solver. The nonmagnetic ground state phase diagram of the system with mass imbalance is constructed numerically. In addition to the three phases showed up in the balanced case, the phase diagram of the mass imbalanced case contains a spin-selective localized phase, where one spin component is metallic while the other spin component is insulating. We find that if one increases the mass imbalance the metal region in the phase diagram is reduced, while both Anderson and Mott insulator regions are enlarged.

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37

Su, Z. C., J. Q. Ning, Z. Deng, X. H. Wang, S. J. Xu, R. X. Wang, S. L. Lu, J. R. Dong, and H. Yang. "Transition of radiative recombination channels from delocalized states to localized states in a GaInP alloy with partial atomic ordering: a direct optical signature of Mott transition?" Nanoscale 8, no. 13 (2016): 7113–18. http://dx.doi.org/10.1039/c5nr07252b.

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38

Nguyen, Thi Hai Yen, Duc-Anh Le, and Anh Tuan Hoang. "Anderson localization in the Anderson - Hubbard model with site-dependent interactions." New Journal of Physics, May 17, 2022. http://dx.doi.org/10.1088/1367-2630/ac706e.

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Abstract We consider Anderson localization in the half-filled Anderson-Hubbard model in the presence of either random on-site interactions or spatially alternating interactions in the lattice. By using dynamical mean field theory with the equation of motion method as an impurity solver, we calculate the arithmetically and geometrically averaged local density of states and derive the equations determining the critical value for the phase transition between metallic, Anderson and Mott insulating phases. The nonmagnetic ground state phase diagrams are constructed numerically. We figure out that the presence of Coulomb disorder drives the system toward the Anderson localized phase that can occur even in the absence of Anderson structural disorder. For the spatially alternating interactions, we find that the metallic region is reduced and the Mott and Anderson insulator ones are enlarged with increasing interaction modulation. Our obtained results are relevant to current research in ultracold atoms in disordered optical lattices where metal-insulator transition can be observed experimentally by using ultracold atom techniques.

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39

Oliveira, Jaime F., Magda B. Fontes, Marcus Moutinho, Stephen E. Rowley, Elisa Baggio-Saitovitch, Marcello B. Silva Neto, and Carsten Enderlein. "Pressure-induced Anderson-Mott transition in elemental tellurium." Communications Materials 2, no. 1 (January 4, 2021). http://dx.doi.org/10.1038/s43246-020-00110-1.

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AbstractElemental tellurium is a small band-gap semiconductor, which is always p-doped due to the natural occurrence of vacancies. Its chiral non-centrosymmetric structure, characterized by helical chains arranged in a triangular lattice, and the presence of a spin-polarized Fermi surface, render tellurium a promising candidate for future applications. Here, we use a theoretical framework, appropriate for describing the corrections to conductivity from quantum interference effects, to show that a high-quality tellurium single crystal undergoes a quantum phase transition at low temperatures from an Anderson insulator to a correlated disordered metal at around 17 kbar. Such insulator-to-metal transition manifests itself in all measured physical quantities and their critical exponents are consistent with a scenario in which a pressure-induced Lifshitz transition shifts the Fermi level below the mobility edge, paving the way for a genuine Anderson-Mott transition. We conclude that previously puzzling quantum oscillation and transport measurements might be explained by a possible Anderson-Mott ground state and the observed phase transition.

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40

Aguiar, M. C. O., and V. Dobrosavljević. "Universal Quantum Criticality at the Mott-Anderson Transition." Physical Review Letters 110, no. 6 (February 5, 2013). http://dx.doi.org/10.1103/physrevlett.110.066401.

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41

Aguiar, M. C. O., V. Dobrosavljević, E. Abrahams, and G. Kotliar. "Scaling behavior of an Anderson impurity close to the Mott-Anderson transition." Physical Review B 73, no. 11 (March 23, 2006). http://dx.doi.org/10.1103/physrevb.73.115117.

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42

Sefat, Athena S., John E. Greedan, Graeme M. Luke, Marek Niéwczas, James D. Garrett, Hanna Dabkowska, and Antoni Dabkowski. "Anderson-Mott transition induced by hole doping inNd1−xTiO3." Physical Review B 74, no. 10 (September 27, 2006). http://dx.doi.org/10.1103/physrevb.74.104419.

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43

Bragança, Helena, M. C. O. Aguiar, J. Vučičević, D. Tanasković, and V. Dobrosavljević. "Anderson localization effects near the Mott metal-insulator transition." Physical Review B 92, no. 12 (September 24, 2015). http://dx.doi.org/10.1103/physrevb.92.125143.

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44

Hanasaki, N., M. Kinuhara, I. Kézsmárki, S. Iguchi, S. Miyasaka, N. Takeshita, C. Terakura, H. Takagi, and Y. Tokura. "Mott-Anderson Transition Controlled by a Magnetic Field in Pyrochlore Molybdate." Physical Review Letters 96, no. 11 (March 24, 2006). http://dx.doi.org/10.1103/physrevlett.96.116403.

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Battista, Francesca, Alberto Camjayi, and Liliana Arrachea. "Anderson-Mott transition in a disordered Hubbard chain with correlated hopping." Physical Review B 96, no. 4 (July 12, 2017). http://dx.doi.org/10.1103/physrevb.96.045413.

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46

Pépin, C. "Kondo Breakdown as a Selective Mott Transition in the Anderson Lattice." Physical Review Letters 98, no. 20 (May 14, 2007). http://dx.doi.org/10.1103/physrevlett.98.206401.

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47

Aguiar, M. C. O., V. Dobrosavljević, E. Abrahams, and G. Kotliar. "Critical Behavior at the Mott-Anderson Transition: A Typical-Medium Theory Perspective." Physical Review Letters 102, no. 15 (April 16, 2009). http://dx.doi.org/10.1103/physrevlett.102.156402.

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48

Pezzoli, Maria Elisabetta, Federico Becca, Michele Fabrizio, and Giuseppe Santoro. "Local moments and magnetic order in the two-dimensional Anderson-Mott transition." Physical Review B 79, no. 3 (January 28, 2009). http://dx.doi.org/10.1103/physrevb.79.033111.

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49

Hofmann, Felix, and Michael Potthoff. "Time-dependent Mott transition in the periodic Anderson model with nonlocal hybridization." European Physical Journal B 89, no. 8 (August 2016). http://dx.doi.org/10.1140/epjb/e2016-70350-9.

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50

Byczuk, Krzysztof, Walter Hofstetter, and Dieter Vollhardt. "Mott-Hubbard Transition versus Anderson Localization in Correlated Electron Systems with Disorder." Physical Review Letters 94, no. 5 (February 10, 2005). http://dx.doi.org/10.1103/physrevlett.94.056404.

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Journal articles on the topic 'Anderson-Mott transition'

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