Dissertations / Theses on the topic 'Amplificateurs GaN'
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Theveneau, Hadrien. "Amplificateurs de puissance à transistors GaN." Thesis, Lille 1, 2016. http://www.theses.fr/2016LIL10204/document.
The goal of this thesis is to realize a pulsed power source with GaN transistors. After a study of the applications of high power microwaves, and a state of the art of the sources, we realized two prototypes of elementary amplifier modules (wide and narrow band). The wideband module produces 70 W CW from 1 to 2.5 GHz, and the narrowband module produces a power higher than 550 W from 1.1 to 1.3 GHz, with a 750 W peak at 1.1 GHz, in 500 µs pulses with 10 % duty cycle. One difficulty is that GaN transistors have low input and output impedances, from 1 to 5 Ω, difficult to adapt towards the 50 Ω standard on a wide bandwidth, and that several transistors need to be combined to reach high input powers, ensuring their mutual isolation to avoid failure propagation and oscillations. We developpes a power combiner using an impedance pre-adaptation with a deffective ground plane allowing to reach a 2.5 Ω low input impedance, and using a microwave absorber to avoid odd mode reflections, which allows the mutual isolation of the transistors
Gamand, Florent. "Amplificateurs de puissance et convertisseurs DC/DC à base de GaN pour des applications hyperfréquences." Thesis, Lille 1, 2013. http://www.theses.fr/2013LIL10064/document.
High efficiency is a key element in modern telecommunication systems, especially in RF power amplifiers. Efficiency has to be as high as possible in order to reduce power consumption thus minimising working cost, maximising autonomy and improve system reliability. In order to increase global efficiency of a power amplifier, dynamic biasing, based on the association of an amplifier and a DC/DC converter, is often used. GaN HEMTs enable high RF power at high frequencies, moreover their capability to switch very quickly and their low resistive losses make them good candidates for both power amplification applications and high speed, high efficiency commutation applications, like DC/DC converters used in dynamic biasing systems. The first part of this manuscript is dedicated to GaN transistors properties and their advantages compared to other semi-conductors for commutation and RF amplification applications. Their characterisation and modelling is also discussed. The second chapter is dedicated to the design and characterisation of high speed DC/DC converters for dynamic biasing applications. The last part approaches high efficiency GaN power amplifiers design in C band for telecommunication applications. The association of a DC/DC converter, designed in chapter II, and a GaN power amplifier in S band in the context of dynamic biasing is also presented and the obtained efficiency improvement is reported
Augeau, Patrick. "Alimentations de puissance agiles en technologie GaN pour l’amplification de puissance RF." Limoges, 2014. https://aurore.unilim.fr/theses/nxfile/default/9021e9e4-b921-4e14-b994-76a04bf6c5db/blobholder:0/2014LIMO4010.pdf.
In telecommunication systems, the impact of front-end consumption on the system efficiency is one of the most critical issues which drives a lot of research effort. At power amplifier (PA) level, the implementation of efficiency improvement techniques is mandatory. The dynamic biasing technique (envelope tracking) appears as a promising technique for the modern standard communications requirements. In such a technique, the drain supply voltage of the PA is dynamically adjusted in accordance with the value of envelope signal being transmitted. State of the art works focusing on bias modulators for envelope tracking highlight the design complexity of such modulators to meet the expected efficiency, power and speed requirements. In this thesis, innovative topology and design method of GaN-based switching cells is theoretically analyzed and validated by non-linear transient simulations. Such improvements of switching cells are validated by two different demonstrators which are realized in high-frequency, high-power GaN HEMT technology. The first modulator is a DC-DC converter driven by a Pulse Width Modulation (PWM) signal, in order to perform a continuous tracking of the drain supply envelope. The second modulator operates in switching mode in order to perform a discrete tracking of the drain supply envelope. This last modulator was coupled to a RF power amplifier to experimentally demonstrate its efficiency without negative impact on PA linearity
Sardin, David. "Méthodes de conception d’amplificateurs de puissance flexibles pour les applications spatiale : Application en bande S et en technologie HEMT GaN à un module 30W contrôlé par envelope tracking." Limoges, 2010. http://www.theses.fr/2010LIMO4042.
This work deals with efficiency improvement of power amplifiers which are part of radiofrequency systems. Current requirements in the aerospace industry make next generation satellites to be power flexible and reconfigurable in order to follow markets evolution. Hence, the idea aims on the one hand, at properly using available on-board DC power and on the other hand, at offering the spacecraft capabilities to lead various mission plans. Consequently, this thesis mainly deals with efficiency improvement of HPAs and describes the design of an highly efficient 30W HPA based on the Envelope Tracking concept. The proposed VHF envelope amplifier demonstrates significant performances regarding efficiency and bandwidth while assuming wide bandwidth modulated signals
Allam-Ouyahia, Samia. "Amplificateurs de puissance à très haut rendement, pour les systèmes radar basés sur les technologies LDMOS Si et HEMT Gan." Cergy-Pontoise, 2006. http://www.theses.fr/2006CERG0331.
The objective of this work is to evaluate power technologies and high efficiency classes (F and inverse F ) for L-band TIR module in phase array radar of Thalès Air Defence. The rapid development of active antennas systems has put power amplifier (PA) efficiency in focus. The combination of high PAE and high power density is very important in new radar generations. We evaluated the performances of two technologies considered HEMT GaN and Silicon LDMOS. For GaN, we evaluated the performances of HEMT AIGaN/GaN by multiharmonic simulations. A 71% PAE is achieved for class F and 74% for inverse class F for output power of 4W. For LDMOS technology, two inverse Class F power amplifiers are designed. The first amplifier allows evaluation of the LDMOS potential for inverse Class F operation. It demonstrates 73. 7% drain e_ciency, 13. 2W output power and 16dB power gain at 1 GHz and for 2dB gain compression. The second one was designed with wider bandwidth as additional criterion. Measurements show high output power and drain efficiency over 170MHz bandwidth (0. 9 to 1. 07 GHz). These performances, compared to reported results for single stage inverse Class F power amplifiers are in the state of the art
Callet, Guillaume. "Caractérisation et modélisation de transistors HEMT AlGaN/GaN et InAlN/GaN pour l’amplification de puissance en radio-fréquences." Limoges, 2011. https://aurore.unilim.fr/theses/nxfile/default/3c0fde17-3720-49cd-9824-bd071826245e/blobholder:0/2011LIMO4033.pdf.
This report deals with the characterization of GaN HEMTs devices in order to create their model. An exhaustive characterization has been realized for AlInN/GaN and AlGaN/GAN based HEMTs. A special care has been given to the different thermal characterization methods, with the use of the 3ω method for the measurement of the thermal impedance. A study of scaling rules for small-signal model is presented. The non-linear model presented is developed in order to extend his application domain to the power amplification and power switches. Finally it is used in the design of the first poser amplifier base on AlInN technology in Ka-band
Trassaert, Stéphane. "Réalisation technologique de transistors à effet de champ dans les filières InP et GaN pour amplification de puissance hyperfréquence." Lille 1, 2000. https://pepite-depot.univ-lille.fr/RESTREINT/Th_Num/2000/50376-2000-45.pdf.
La seconde partie porte sur la realisation de mesfets dans la filiere gan pour des applications en puissance et a haute temperature. Les differentes briques technologiques permettant de realiser le composant ont ete d'abord etudiees. Le contact ohmique retenu tient thermiquement jusqu'a 600\c. Une gravure du gan par plasma a aussi ete mise au point. Enfin, le contact schottky a ete aborde. Les composants realises ont ete caracterises. Nous avons obtenu, selon la distance source drain, jusqu'a 140 v et 350 v pour respectivement une tenue en tension vds en configuration transistor a canal ouvert et une tension de claquage en configuration diode inverse. La mesure a haute temperature a montre le fonctionnement du composant jusqu'a 450\c sans degradation. La mesure en regime impulsionnel a mis en evidence l'existence de pieges localises en surface qui peuvent etre excites par la lumiere et/ou la temperature et/ou le point de polarisation. Une densite de puissance de 2,2 w/mm a ete obtenue a 3 ghz pour une longueur de grille de 300 nm, ce qui constitue un resultat au niveau de l'etat de l'art
Piazza, Michele. "Impact of Schottky structure on GaN-based HEMTs reliability." Limoges, 2012. http://www.theses.fr/2012LIMO4020.
Les transistors à effet de champ à hétérostructure (HFET or HEMT) en nitrure de gallium se présentent comme des candidats à fort potentiel pour la prochaine génération d’amplificateur de puissance dans les domaines de radio fréquences et des ondes millimétriques. Ce sont ses propriétés physiques et électroniques telle qu’une grande largeur de bande interdite, un potentiel pour de forte densité de courant et un très fort champ de claquage qui le rendent supérieur aux semi-conducteurs tels que le silicium et l’arséniure de gallium. Ce manuscrit reprend des notions générales sur la fiabilité des HEMTs en GaN et décrit certains tests de vieillissement accéléré et certaines mesures complémentaires réalisés au sein du Groupe de Microélectronique de Thales – III-VLAB, en collaboration avec l’Université de Limoges (XLIM), et le laboratoire d’analyse physique de Thales Research & Technology (LATPI). Le travail se focalise sur l’impact du contact de grille sur la stabilité du transistor HEMT ; les principaux paramètres étudiés sont les deux différents contacts métalliques (en molybdène et en nickel) et les deux matériaux développés au sein du III-VLAB, AlGaN et InAlN sur buffer GaN. L’évaluation s’appuie sur des essais de stockage en température ainsi que sur des essais sous polarisation statique continue en configuration de débit. Les résultats des essais permettent de préciser la fiabilité de différents contacts et empilements métalliques, tandis que les essais en débit mettent en évidence l’effet du champ électrique et de la densité de courant sur la dégradation des transistors en condition de fonctionnement
Letailleur, Lucas. "Éléments d'architecture d'émetteur linéarisé en technologie GaN pour des applications 5G millimétrique." Electronic Thesis or Diss., Université Gustave Eiffel, 2023. http://www.theses.fr/2023UEFL2073.
This thesis focuses on architectures and circuits for 5G FR2-1 communication systems. These systems operate in millimeter waves and use massive Multiple Input Multiple Output (MIMO) techniques. A gallium nitride (GaN) power amplifier (PA) from Macom is characterized and modelled. The results show that the PA do not meet the requierements of the 5G FR2-1 standard. A digital predistorsion (DPD) and an analog predistortion (APD) are therefore investigated and compared. DPD offers better linearization performance than the APD, but cannot linearize bandwiths grater than 100 MHz. The APD, on the other hand, allows to linearized a signal with a bandwidth up to 400 MHz on the n258 frequency band, and can be co-integrated with the PA. Both linearization techniques enable the amplifier to meet the requirements of 5G FR2-1 standard. The use of massive MIMO suggests that conventional architectures need to be reviewed. Consequently, a new approach for sizing the critical elements of the emission architectures is proposed. The main objective is to find the most suitable trade-off between the emitted power, linearity and the consumption of the overall architecture. For beamforming, a Butler matrix, using the same substrate as the power amplifier, is designed, and a new architecture is investigate. The architecture uses a co-design of a single power amplifier, a switch and a Butler matrix network, and enables 32 radiating elements to be fed. Finally, a comparative analysis of low-noise amplifiers based on GaN and gallium arsenide (GaAs) is carried out and a figure of merit is proposed. This study shows that it is possible to use the same technology for all front-end elements
Delprato, Julien. "Analyse de la stabilité d'impulsion à impulsion des amplificateurs de puissance HEMT GaN pour applications radar en bande S." Thesis, Limoges, 2016. http://www.theses.fr/2016LIMO0060/document.
Radar-oriented applications require stringent performances. Among them, emitting pulse train with uniform envelope characteristics in term of amplitude and phase. The criterion to quantify the self-consistency of radar signals over the pulse train is the pulse to pulse stability. The power amplifier is the most critical element in the RF radar chain because it has a strong impact on the overall pulse to pulse stability performances. In this context, this work is focused on the study of the impact of a HEMT GaN power amplifier on the pulse to pulse stability. Mathematical approach is presented to derive the pulse to pulse stability from time domain envelope measurements. Design and implementation of a 50Ω matched RF power amplifier are presented. Different radar bursts scenario are investigated and their impact on the pulse to pulse stability are quantified through extensive time domain envelope measurements. For that purpose, a dedicated experimental heterodyne time domain envelope test bench has been developed. These pulse to pulse stability measurements are finally used to optimize and fully validate a nonlinear electrical model of a HEMT GaN, allowing to quantify the relative impact of thermal and trapping effects during circuit envelope simulation in radar-oriented applications
Khelifi, Noureddine. "Compatibilité Electromagnétique des amplificateurs GaN radiofréquence à suivi d’enveloppe : Analyse et modélisation de l’influence du bruit des alimentations à découpage." Limoges, 2013. https://aurore.unilim.fr/theses/nxfile/default/d8ec9e05-2918-47ea-8131-05296eebc1da/blobholder:0/2013LIMO4019.pdf.
The work of this thesis addresses EMC problems related to switching power supplies, which are used as bias control of RF power amplifiers. Such supplies generate a chopping noise that may have a significant impact on the RF amplifier operation. Following a general presentation of the issue, the characterization and modeling of decoupling capacitors are achieved in order to justify the choice of such a decoupling network that is suitable for supply noise decoupling, while focusing on recently developed technologies to minimize parasitic elements, especially the inductance. The next step concerns the study of a DC‐DC converter operation, with an analysis of the different parameters that can decrease the switching noise level (decoupling network composition, PCB routing, etc. ). Switching noise modeling is the performed to allow integrating this parameter in the simulations during the development of the global system. Eventually, the last part of this work presents a characterization methodology for PSRR (Power Supply Rejection Ratio) of RF power amplifiers. A study of the influence of different configurations (decoupling, routing) of the matching output circuit on the PSRR level was performed
Medrel, Pierre. "Amplification de puissance linéaire à haut rendement en technologie GaN intégrant un contrôle de polarisation de grille." Thesis, Limoges, 2014. http://www.theses.fr/2014LIMO0006/document.
This work deals with linear and high efficiency microwave power amplification in GaN technology.The first chapter is dedicated to the general context of wireless telecommunication with a special emphasis on the RF power amplifier. The most representative figures of merit in terms of linearity and power efficiency are introduced.The second chapter deals more specifically with the GaN technology and GaN-based transistor for microwave power amplification. A description of the principal architectures found in the literature related to high efficiency and linear amplification is summarized.In the third chapter, the developed envelope time-domain test bench is presented. Time-synchronization and envelope calibration procedures are discussed. As an illustration, a new specific wideband NPR measurement is presented and experimentally validated.An innovative power amplifier architecture is presented in the fourth chapter. It is based on a specific dynamic gate biasing technique of the power amplifier biased close to the pinch-off point. A 10W GaN S-band demonstrator has been developed. Compared to fixed class-B conditions, a linearity improvement has been reported without any prohibitive efficiency degradation of the RF power amplifier. Finally, an investigation of the proposed technique for the efficiency improvement in the drain envelope tracking technique is proposed
Nsele, Séraphin Dieudonné. "Analyse électrique et en bruit basse fréquence et haute-fréquence des technologies InAIN/GaN HEMTs en vue de la conception d'amplificateurs robustes faible bruit en bande Ka." Toulouse 3, 2014. http://thesesups.ups-tlse.fr/2501/.
The high bandgap technologies are being increasingly popular for over a decade because of their natural ability to perform electronic functions operating at high power, high temperature and high frequency. Among these technologies, one based on the heterostructure AlGaN / GaN is most mature currently at microwave frequencies. The use of a heterojunction InAlN / GaN is an attractive solution to increase the operation frequency of these devices and thus to realize circuits operating at millimeter waves. The first part of our work is devoted to the study of various InAlN/GaN technology developed by III-V Lab. It helped to highlight the different gate current conduction mechanisms through an analysis of the leakage current and the C-V measurements of the Schottky junction. Measures in small-signal showed the frequency dispersion of the output conductance and the extrinsic transconductance until 1 GHz. We have proposed broadband analytical models to take into account the dispersion phenomena during the circuit design. A second part consisted of the study of the background noise in the InAlN / GaN transistors. The low-frequency noise characterizations and modeling revealed and confirmed trapping / detrapping mechanisms observed in the electrical study. The study of highfrequency noise has assessed the technological developments of this sector and to know the optimal conditions for the design of LNAs. In the last part, hybrid low noise amplifiers have been made from these devices deferred flip-chip on alumina to demonstrate the potential of this technology in Ka-band. Single stage amplifiers have been designed especially for stress testing, and have a gain of 5. 6 dB and a noise figure of 3. 1 dB at 29. 5 GHz. The simulations carried out on 3 stages amplifiers indicate interesting performances in terms of gain (20 dB) and noise figure (3 dB) compared to those obtained in the literature on the GaN based devices
Ramadan, Alaaeddine. "Amplification de puissance à haut rendement en bande L et en technologie GaN intégrant une pré formation de la tension de commande d'entrée." Limoges, 2010. https://aurore.unilim.fr/theses/nxfile/default/ffee17f3-34c5-439b-8f3b-a0e896c80931/blobholder:0/2010LIMO4016.pdf.
High efficiency performances of microwave power amplifiers are reached by implementing proper matching conditions at harmonic components. Harmonic tuned amplifiers offer for the moment the best energy conversion efficiency between DC supply and RF power at fundamental frequency available in a 50 Ω load. In addition to proper harmonic terminations, the minimization of power losses at fundamental frequency in the output RF matching and power combining circuit is of prime importance. This has been widely reported over the past few years. Considering this main aspect GaN technology offers an evident advantage due to its high drain voltage operation capability that is beneficial for designing low loss and wideband output matching circuits. Several works have been reported during the past few years. This work examines power added efficiency improvements by implementing an appropriate gate source voltage waveform shaping of power cells. Analytical calculations, circuit simulations using a nonlinear model of a 15W GaN HEMT and a two stage power amplifier design have been achieved. The power stage operates at high drain bias voltage under class F conditions while the driver stage operates at low drain bias voltage under inverse class F conditions to drive the input of power stage by an appropriate gate source voltage waveform shape. Very good power added efficiency have been reached over a wide frequency bandwidth. This work addresses the amplification of constant envelope signals that do not require any stringent specification in terms of linearity
Charbonniaud, Christophe. "Caractérisation et modélisation électrothermique non linéaire de transistors à effet de champ GaN pour l'amplification de puissance micro-onde." Limoges, 2005. https://aurore.unilim.fr/theses/nxfile/default/79c33578-89cc-4e80-95d3-736bbeeaae52/blobholder:0/2005LIMO0052.pdf.
The aim of this study is to assess the potentialities of HEMTs AlGaN/GaN transistors for power amplification at microwave frequencies, thanks to a bench in pulsed I(V) and [S] parameters measurement, and to propose a precise model of this type of transistor easily implemented in circuit C. A. D software. After considering the different technologies available on the market for power amplification, wide gap HEMTs transistors based on Gallium Nitrides appear as natural candidates for these applications (Johnson’s Figures of Merit,…). However these more than promising transistors are not infallible. Indeed, several restrictive phenomena inherent to GaN technology, that is to say selfheating and trapping effects, must be taken into account in the process of designing microwave circuits. A study of these various restrictive phenomena in terms of power is carried out. Lastly, a non-linear electrothermal model of a HEMT 8x125 µm transistor is presented, and validated thanks to two functional measurement benches (Load-Pull Bench and LSNA Bench)
Lagarde, Cyril. "Modélisation de transistor de puissance en technologie GaN : conception d’un amplificateur de type Doherty pour les émetteurs à puissance adaptative." Limoges, 2006. https://aurore.unilim.fr/theses/nxfile/default/36416d31-0431-481e-84ec-ad7070a42012/blobholder:0/2006LIMO0038.pdf.
New power transistors technologies based on “wide bandgap” materials such as Gallium Nitride (GaN) were developed these last years. This new technology presents interesting capabilities for high power microwave amplifiers in terms of high working temperature, high power densities and high breakdown voltages. This work concerns first the development of a new tabular electrothermal non linear model including trapping effects on an AlGaN/GaN power HEMT. This model has then been used, in the second part of this thesis, to design a power amplifier based on the Doherty principle. In satellite communication systems, a good linearity and a high efficiency are drastic constraints on the power amplifier. In order to deal with these constraints, we have proposed and designed a new Doherty amplifier with a symmetrical architecture based on three GaN HEMT devices. Experimental results have shown the interesting capabilities of this new Doherty structure in terms of efficiency and linearity under output power back-off operation
Saugnon, Damien. "Contribution aux analyses de fiabilité des transistors HEMTs GaN : exploitation conjointe du modèle physique TCAD et des stress dynamiques HF pour l'analyse des mécanismes de dégradation." Thesis, Toulouse 3, 2018. http://www.theses.fr/2018TOU30164/document.
In the race to technologies development, disruptive wide bandgap GaN devices propose challenging performances for high power and high frequency applications. These technologies strongly mobilize academic and industrial partners in order to improve both the performances and the reliability aspects. Extensive efforts have made it possible to better identify, understand and control first order degradation mechanisms limiting the lifetime of the devices; however, the correlation (and fine physical analysis) of different degradation mechanisms still raises many questions, and it is essential to strengthen these studies by mean of multi-tool analysis approach. In this thesis, we propose a twofold analysis strategy. The first aspect concerns the implementation of a stress bench that allows the monitoring of numerous static and dynamic electrical markers, without removing the devices under test from their environment (in order to have a consistent data set during the period of the strain application). The second aspect consists in implementing a physical TCAD model of the technology under study, in order to calibrate the component before stress, and to tune the model at different periods of stress (still considering stress-dependent parameters potentially affecting the device). The first chapter is devoted to the presentation of the main reliability tests of GaN HEMTs, and of the electrical and/or structural defects identified in the literature; it thus refers to so-called non-invasive techniques (i.e. respecting the functional integrity of the component under test), and destructive techniques (i.e. not allowing additive electrical measurement). The second chapter presents the high frequency and thermal stress bench dedicated to this study; the addition of a vector network analyzer switching between the four test channels provides dynamic frequency data, in order to interpret the variations of the small signal electrical model of the devices under test at different stress periods.[...]
Dupuy, Victor. "Conception et réalisation d'amplificateur de puissance MMIC large-bande haut rendement en technologie GaN." Thesis, Bordeaux, 2014. http://www.theses.fr/2014BORD0211/document.
This work focus on the design of wideband and high efficiency GaN MMIC high power amplifiers for military applications such as radar and electronic warfare. The main objectives consist in finding innovative power combining structures in order to decrease the overall size of amplifiers and increasing their efficiency at the same time. For these matters, an important part of this work consisted in the design and realization of ultra compact and low loss power combiners. Once the combiners realized and measured, they are integrated into power amplifiers to prove their functionality and the advantages they bring. Several kind of amplifiers have been realized whether regrind their architecture or their performances
Astre, Guilhem. "Fiabilité des dispositifs HEMT en technologie GaN." Phd thesis, Toulouse 3, 2012. http://thesesups.ups-tlse.fr/1980/.
Reliability in GaN based devices still motivates numerous studies because the involved degradation mechanisms are different from that in III-V narrow bandgap devices. Direct investigations on high electron mobility transistors (HEMT) are performed with low frequency noise (LFN) measurements, pulsed electrical characterization and deep level transient spectroscopy. The first part of this thesis deals with generalities on AlGaN/GaN High electron mobility transistors and their technological particularities. The second part deals with the presentation of the diagnostic tools used in this study. A low frequency noise bench developed in LAAS-CNRS allowing measurements from few hertz up to 1 MHz is described, an original method of electrical pulsed characterization has and current deep level spectroscopy bench. In the third part of this study, low frequency noise is used to assess effects of deuterium (H+ ions) in diffusion condition on the robustness of 0. 25 *2*75 µm² gate area AlGaN/GaN high electron mobility transistors (HEMT) grown on Si substrate. H+ Ions are diffused from the above AlGaN/GaN layer through the AlGaN/GaN interface and GaN layer, notably under the gated channel where the defects are located. In the fourth part, undoped AlGaN/GaN devices grown on silicon substrate have been stressed at a junction temperature of 175°C. Gate-lag and drain-lag measurements method have been performed versus different quiescent bias points and under different pulse conditions. This method allows the discrimination of each lag phenomenon as well as the thermal contribution. Thus it is possible to track and model the trapping mechanisms versus bias conditions. This electrical modeling is completed with LFN measurements and deep level transient spectroscopy, which is largely used for reliability investigations
Guhel, Yannick. "Réalisation de transistors à effet de champ à base de GaN pour l'amplification de puissance en gamme d'ondes millimétriques et à haute température." Lille 1, 2002. https://pepite-depot.univ-lille.fr/RESTREINT/Th_Num/2002/50376-2002-295.pdf.
Astre, Guilhem. "Fiabilité des dispositifs HEMT en technologie GaN." Phd thesis, Université Paul Sabatier - Toulouse III, 2012. http://tel.archives-ouvertes.fr/tel-00767154.
Elmazova, Flavie. "Contribution à l’étude de l’amplification de puissance en technologie GaN par la technique de suivi d’enveloppe." Limoges, 2011. https://aurore.unilim.fr/theses/nxfile/default/96f82fad-1d8b-456f-bcb7-11f40bbda9bd/blobholder:0/2011LIMO4026.pdf.
The work of this thesis is the study of microwave power GaN technology amplification. In this, a brief description of the main properties of this material is made to justify the choice of a particular candidate for microwave power applications. The next step was to characterize and extract the non-linear model of a GaN transistor. This model served as a basic unit for the simulation of an amplifier and a polarization modulator. The combination of these two functions has allowed us to apply and study the Envelope Tracking principle at L-band and some of the main characteristics of this amplification technique have been shown. In a second step, an experimental validation at S band has been done by using a built-in GaN amplifier and a laboratory test-Bench. The efficiency improvement of the RF power amplifier is observed by this technique and linearization is necessary to improve the linearity
Ayad, Mohammed. "Etude et Conception d’amplificateurs DOHERTY GaN en technologie Quasi - MMIC en bande C." Thesis, Limoges, 2017. http://www.theses.fr/2017LIMO0027.
This work responds to an increased industrial need for on carrier signals with variable envelope amplification used by current telecommunications systems. These signals have a strong PAPR and an envelope statistical distribution centred below the envelope peak value, the reason why the telecom industrialists then require a robust and reliable high power amplifiers having an energy expenditure along of the envelope dynamics associated with an acceptable level of linearity. This document presents the results of the study and realization of two, high efficiency, Doherty Power Amplifiers (DPA) encapsulated in QFN plastic packages. The first is a conventional Doherty power Amplifier (DPA-SE) and the second is a dual-input Doherty power amplifier (DPA-DE). These C-band demonstrators are based on the use of Quasi-MMIC technology combining power bars based on the AlGaN/GaN transistors on SiC to matching circuits in ULRC technology. The Quasi-MMIC approach combined with Quasi-MMIC approach combined with QFN plastic package solution for better thermal behaviour management offers electrical performances similar to those of MMIC technology with very attractive coasts and manufacturing cycles. During this work, a new evaluation method for the transistors dedicated to the design of DPA was developed and implemented. The intensive use of 2.5D and 3D electromagnetic simulations made it possible to take into account the coupling effects existing between the different circuits in the QFN package environment. The results of the tests of the amplifiers realised and operating on 1GHz bandwidth validated the design method and showed that the advanced concepts associated with the Quasi-MMIC approach as well as plastic encapsulation technologies can generate innovative microwave functions. The characterizations of the DPA-DE have noted the interest inherent in the preformation of the excitation signals and the bias points of each stage of the amplifier
Rifi, Mohamed Aziz. "Etude et conception d’un amplificateur de puissance en technologie GaN MMIC fonctionnant en bande K adapté aux systèmes de suivi d’enveloppe." Thesis, Limoges, 2021. http://www.theses.fr/2021LIMO0019.
This thesis work is part of the process of continuous improvement of the efficiency and linearity of power amplifiers in presence of signals on modulated carriers used in modern telecommunications systems. These signals have a high PAPR and a statistical envelope distribution centered below the envelope peak value. As a result, conventional power amplifiers (Class AB fixed bias) are often oversized to meet the needs of the telecom industry. The envelope tracking technique has been used to increase the PAE along the OBO (10 dB for LTE) while maintaining a constant power gain associated to a good linearity in terms of AM/AM conversion. A power amplifier design method in MMIC technology based on the use of GaN HEMTs has been developed and is used to design an APdelivering an output power of 4W and operating in K-band [17-20GHz]. The realized APwas then coupled to a digital drain bias modulator. The APand bias modulator assembly constituting an envelope tracking system called APSE was characterized in terms of efficiency and linearity in presence of modulated signals. The APSE shows very interesting performances compared to those obtained with a fixed bias AP. Indeed, at an OBO of about 7dB, in the [17-20GHz] band, the PAE is improved by [10-7.5]. The average PAE along the OBO varies between 32 and 36% over the considered band and it is associated to an EVM varying between 5 and 1.6% with a quasi-static DPD applied to the baseband signal.The characterizations of APSE have demonstrated the interest of the use of envelope tracking power amplifiers in modern telecommunications systems
Avcu, Mustafa. "Caractérisation des effets parasites dans les HEMTs GaN : développement d'un banc de mesure 3ω." Thesis, Limoges, 2014. http://www.theses.fr/2014LIMO0048/document.
This report is devoted to the development of a new measurement bench for thermal impedance characterization of GaN HEMTs. This measurement test set uses the so-called « 3ω » technique, which consists to measure the electrical signal at third harmonic real image of the thermal magnitude variations of the device. A sweep in function of the excitation frequency allows extracting of the thermal impedance. The measurement results have been validated by electrical simulation. Other complementary studies were performed to identify the trapping effects using different methods to extract the traps signature. The realization of nonlinear models is presented for AlGaN HEMT / GaN and InAIN / GaN to the power amplification applications in frequency bands X and K
Delias, Arnaud. "Polarisation dynamique de drain et de grille d’un amplificateur RF GaN appliquée à un fonctionnement RF impulsionnel à plusieurs niveaux." Thesis, Limoges, 2015. http://www.theses.fr/2015LIMO0109/document.
Wireless communications are experiencing tremendous growth and are integrated into most modern electronic systems. More precisely, saving energy consumption of RF power amplifier is the core of this thesis work. This work presents a dynamic drain bias architecture used to keep a high efficiency over a large output power range. Design and implementation of a wideband RF power amplifier, a drain supply modulator and a gate driver circuit in GaN technology are presented. The built-in prototype demonstrates an overall efficiency improvement. A specific focus on non-linear interaction between the RF power amplifier and the drain supply modulator highlights the effects of this technique on the output envelope signal shape. A narrow pulse gate bias peaking preceding drain bias voltage variations is applied in order to mitigate drain bias current, voltage overshoot and power droop, thus improving pulse envelope waveforms of the RF output signal. An experimental validation of the proposed demonstrator is performed for a RF pulsed test sequence having different power levels. This way enables to keep rectangular pulse envelope shape at the RF output signal without any major impact on overall efficiency performances
Meyer, Sandra de. "Etude d'une nouvelle filière de composants HEMTs sur technologie nitrure de gallium : Conception d'une architecture flip-chip d'amplificateur distribué de puissance à très large bande." Limoges, 2005. http://aurore.unilim.fr/theses/nxfile/default/c6724388-69b6-4017-a9a5-6408d2282ef8/blobholder:0/2005LIMO0030.pdf.
This work deals with the characterization of GaN HEMTs for RF power applications. In a first step, the properties of wide band-gap materials, and especially the GaN material, are analyzed in order to highlight their capabilities for wide band power amplifiers application. Results on characterization and linear/non-linear electrical and electromagnetic simulations, is exposed and applied to analyze different topologies and mountings of GaN HEMTs. This work is finalized with the design of wide band power amplifiers, showing a distributed architecture of cascode cells using GaN HEMTs and flip-chip mounted onto an AlN substrate. It appears as the first step toward GaN MMIC designs as capacitors and resistors are implemented on the GaN die. One version allows obtaining 10W over a 4 to 18GHz bandwidth, with an associated PAE of 20% at 2dB compression input power
Couvidat, Julien. "Contribution à la modélisation de transistors GaN et à la conception d’architectures innovantes d’amplificateurs de puissance à rendement amélioré pour modules d’émission-réception aéroportés." Thesis, Limoges, 2019. http://www.theses.fr/2019LIMO0019/document.
GaN based High Electron Mobility Transistors (HEMT) present outstanding performances for microwave power amplification with respect to their silicon-based counterparts. However, this technology still suffers from low frequency memory effects originated from defaults in the structure, the so-called trapping effects. First part of this thesis aims to characterize and model the trapping effects. It has been shown that the slow-rate trapping effects could be separated from the fast-rate ones, by carrying specific pulsed I-V measurements. Consequently, a new, physic based, electrical model has been developed in order to take into account the slow traps. This model, added into an already existing GaN CAD model, has been validated through large signal measurements. Secondly, the thesis goal is to design a reconfigurable power amplifier architecture between a high power X band mode and a medium power C to X band mode for airborne T/R modules. A 10 GHz, encapsulated GaN transistors based PCB demonstrator has been realized in order to demonstrate both the power and the frequency bandwidth reconfigurability of the Load Modulated Balanced Amplifier (LMBA) architecture. Moreover, two GaN integrated power amplifiers have been designed in order to be reused in a full MMIC version of the architecture
Demenitroux, Wilfried. "Caractérisation avancée et nouvelles méthodologies de modélisation des technologies GaN pour la conception d’amplificateurs de puissance large bande et haut rendement aux fréquences RF et microondes." Limoges, 2011. https://aurore.unilim.fr/theses/nxfile/default/bd67ae36-c41e-48b1-a795-cee1579821d7/blobholder:0/2011LIMO4040.pdf.
Highly efficient, high linearity and wideband are the keyword of the new power amplifier in telecom nowadays. Thus, more and more power amplifiers are developed using packaged transistor, adding a difficulty to extract reliable CAD models for designing these amplifiers. The topic of this thesis is to propose a new methodology for modeling packaged transistor, fast, accurate automatic and dedicated to the design of wideband and highly efficient power amplifiers. A new behavioral model of packaged transistor is proposed, using an innovative method of extraction. In order to validate the new design flow approach, the study results in a GaN wideband and highly efficient power amplifier presenting a mean PAE of 65%, a mean output power of 41 dBm and a mean power gain of de 13 dB over 36% of relative bandwidth around 2. 2 GHz
Mouginot, Guillaume. "Potentialités des transistors HEMTs AlGaN-GaN pour l’amplification large bande de fréquence : Effets limitatifs et modélisation." Limoges, 2011. http://aurore.unilim.fr/theses/nxfile/default/4c36e4fd-daca-4684-8b8d-12ab331c721d/blobholder:0/2011LIMO4056.pdf.
Nowadays, the design of high-frequency broadband power integrated circuits is an important research axis in modern defense systems. This manuscript proposes a study about GaN HEMT in order to highlight its interest for these applications. The first part consists in design and measurement data of a broadband 6-18 GHz power amplifier. The obtained results demonstrate the performance of UMS GH25 technology based on SiC substrate. Unfortunately, for high frequency applications, AlGaN/GaN HEMT is limited by two phenomena that are thermal and trapping effects. Thus, a non-linear electrothermal model including these effects for a HEMT 8x75 μm is proposed. Some specific characterizations have shown limitations of current techniques for trap modeling and their analyses should open new perspectives in this field
Le, Coustre Gwenael. "Contribution au développement d’une filière de transistor de forte puissance à base de technologie HEMT GaN pour applications télécoms et radar." Thesis, Lille 1, 2009. http://www.theses.fr/2009LIL10118/document.
The use of wide-gap materials is a solution for the generation of power at microwaves frequencies, and HEMTs processed on Gallium Nitride currently present the best world performances in this domain. However, the designers need to know their electrical limitations. More precisely, they need to know their electric characteristics in their areas of operation, and also to have at their disposal mathematical model for CAD tools. In a first part, electrical characterizations were carried out in order to determine the impact of the physical limitations on the generation of power: breakdown voltage, gate-lag and drain-lag related trapping effects, thermal resistance of interface in the epitaxy…In the second part of this thesis, the design and the realization of first demonstrators were carried out in band S (3 GHz). These demonstrators allow a first characterization of the power devices with several millimeters of gate development processed in the laboratory. These characterizations are not to be done on wafer, for thermal reasons as well as electrical connections issues. They allow determining the optimum impedances for power and/or PAE very close to the DUT terminals, i.e. with a good precision. These impedances will be used for the design of the amplifiers, presented in the first part. First, an analysis of the impact of the input and output loads on the reachable bandwidth has been done. Secondly, a presentation of the design and the characterization of 25W and 100W class HPA is presented. The measurements of these latter amplifiers have shown output power higher than 120W, with a power added efficiency and an associated power gain respectively of 40% and 22 dB. These results, in terms of power, PAE and temperature, make us very confident for the future design of GaN HEMTs based amplifiers in S-band for radar applications
Douvry, Yannick. "Étude de HEMTs AlGaN/GaN à grand développement pour la puissance hyperfréquence : conception et fabrication, caractérisation et fiabilité." Thesis, Lille 1, 2012. http://www.theses.fr/2012LIL10131/document.
This thesis describes the work performed within iemn laboratory. The design, fabrication and improvement of AlGaN/GaN HEMTs on Si(111) substrate is the main goal of this work, as these transistors are aimed to be integrated in devices for microwave power applications. In the first chapter, this manuscript shows the worthwhile physical, electrical and mechanical properties of the used materials. HEMT working principle is also exposed in this part. Next, every step of the HEMT manufacturing process are described in the second chapter, including several optimization studies. Particular attention will be paid to bottlenecks encountered during the device making. The third chapter presents the whole studies done on these electronic components. Each study relies on electrical characterization in DC, pulsed and microwave modes. The final chapter regards reliability studies of AlGaN/GaN HEMT on SiC substrate having the same topology. Defects induced during more than 3000h ageing in high operating temperature will be highlighted
Chéron, Jérôme. "Méthode d'encapsulation optimale d'une technologie HEMT GaN pour la conception d'amplificateurs large bande à forte puissance et haut rendement destinés aux applications radars en bande S." Limoges, 2011. https://aurore.unilim.fr/theses/nxfile/default/b9607ad9-db5a-4302-8d68-2ee8d6236242/blobholder:0/2011LIMO4010.pdf.
Radar applications require more performances in terms of high efficiency, wideband and output power in order to minimize power consumption, system size and cooling. Henceforth, HEMT GaN transistor is the most suitable technology for high power requirements of radar applications in S-Band. The aim of this thesis is to propose a new methodology for power bar packaging in order to overcome usual design techniques that limit both efficiency and wideband performances. Thus, a package design was optimized to obtain an optimal behaviour of the HEMT GaN power bar and to ensure high efficiency on wide bandwidth. Optimized packaged power bars were realized demonstrating 60% PAE with 50 W output power on 25% bandwidth in S-band (around 3. 2 GHz). The robustness of these amplifiers was highlighted. They can withstand very high SWR at the harmonic frequencies without any change in performance. Moreover, dimensions of these optimized packaged power bars are lower than 0. 7 cm²
Minko, Auxence. "Technologie des composants de type HEMTs AlGaN/GaN sur substrat silicium pour des applications en amplification de puissance et faible bruit." Lille 1, 2004. http://www.theses.fr/2004LIL10109.
Benbakhti, Brahim. "Analyses physique et thermique de transistors à effet de champ de la filière GaN : optimisation de structures pour l'amplification de puisssance hyperfréquence." Lille 1, 2006. https://pepite-depot.univ-lille.fr/RESTREINT/Th_Num/2006/50376_2006_294.pdf.
Dasgupta, Abhijeet. "High efficiency S-Band vector power modulator design using GaN technology." Thesis, Limoges, 2018. http://www.theses.fr/2018LIMO0021/document.
The evolution of telecommunications systems, linked to a constantly increasing demand in terms of data rate and volume, leads to the development of systems offering very wide bandwidths, modulations with very high spectral efficiencies, increased power and frequency flexibilities in transmitters. Moreover, the implementation of such systems must be done with a permanent concern for energy saving, hence the recurring goal of the RF power amplification which is to combine the best efficiency, linearity and bandwidth. Conventional architectures of RF emitter front-ends consist in a first step in performing the frequency modulation-conversion operation (IQ Modulator) and then in a second step the DC-RF energy conversion operation (Power Amplifier), these two steps being usually managed independently. The aim of this thesis is to propose an alternative approach that consists in combining these two operations in only one function: a high efficiency vector power modulator. The core of the proposed system is based on a two-stage GaN HEMT circuit to obtain a variable power gain operating at saturation. It is associated with a specific multi-level bias modulator also design using GaN technology. The fabricated device generates, at a frequency of 2.5 GHz, a 16QAM modulation (100Msymb/s) with 13W average power, 25W peak power, with an overall efficiency of 40% and 5% EVM
Kabouche, Riad. "Caractérisations de composants et Conceptions de circuits à base d’une filière émergente AlN/GaN pour applications de puissance en gamme d’ondes millimétriques." Thesis, Lille 1, 2017. http://www.theses.fr/2017LIL10200/document.
Gallium Nitride (GaN) technology is now the ideal candidate for high power applications in the millimeter wave range. The characteristics of this material enable high voltage operation at high frequency, as illustrated by its breakdown field and high electron saturation velocity. This research work has initially allowed the development of a test bench capable of "Large Signal" characterization, called LoadPull up to Q band, in continuous-wave and pulsed mode of this emerging technology. Indeed, the high power density generated by the GaN technology has made the development of this bench unavoidable and relatively unique. In addition, this study has focused on the characterization of several innovative types of devices that have demonstrated state-of-the-art performance, with a power added efficiency (PAE) above 46% associated to a power density of 4.5 W/mm obtained for an operating frequency of 40 GHz in continuous-wave. Finally, this work aimed the design and fabrication of two power amplifiers on silicon substrate (based on the industrial OMMIC technology) in the Ka-band, showing the possibility of achieving MMIC type circuits from advanced GaN transistors technology. These two amplifiers were designed for specific purposes: combining high power and high PAE performance and pushing bandwidth limits
Courty, Alexis. "Architecture d'amplificateur de puissance linéaire et à haut rendement en technologie GaN de type Doherty numérique." Thesis, Limoges, 2019. http://www.theses.fr/2019LIMO0067/document.
The high capabilities of current and future 5G communication satellite links lead the processed signals in the payloads to simultaneously exhibit large amplitude variations (PAPR>10dB) and wide instantaneous bandwidths (BW>1GHz). Within the microwave transmission subsystem, the operation of the power amplification stage is highly constrained by the transmitted waveforms, it is one of the most energy-consuming module of the payload affecting as well the integrity of the transmitted signal. In this context, the functions dedicated to digital signal processing and currently implemented by the digital processor (such as filtering, channeling, and possibly the demodulation and regeneration of baseband signals) embedded in the payloads, represent a potential solution that would reduce the constraints reported on the power amplification function and help to manage the allocated power ressource. This work proposes a study on the capability of dual input power amplifier architectures in order to manage the efficiency-linearity trade-off over a wide bandwidth. This study is carried out on a 20W GaN Doherty demonstrator operating in C band. The combination of the output signals on the RF load is managed by an optimal amplitude and phase distribution that is digitally controlled at the input. Firstly, a wideband design methodology of Doherty amplifier is introduced and validated on a C band demonstrator. In a second time the experimental tool allowing the extraction of amplitude and phase input distributions is presented, the dual input characterization is achieved and compared with simulation results. Finally, in perspective of this work, a preliminary study of the capabilities of the digital Doherty for the management of an output load mismatch (VSWR management) is carried out and the results are put forward
Dufraisse, Jérémy. "Étude des classes de fonctionnement à haut rendement pour l’amplification de puissance en hyperfréquence en utilisant la technologie HEMT à base de nitrure de gallium." Limoges, 2012. https://aurore.unilim.fr/theses/nxfile/default/c7bdc71a-d073-4907-929b-aac730f327fa/blobholder:0/2012LIMO4048.pdf.
This report deals with the study of class of amplifiers in order to improve the power efficiency of amplifiers based on AlGaN/GaN and InAlN/GaN HEMT, work-ing around 2 GHz. The analysis of the electrical characteristics of HEMT based on GaN presents the impact of field plates and the drain-gate distance on device's performances. Then, the description of the improvements of each class leads to the design of circuits working in inverse F-class with a measured power added ef-ficiency of 58 % and an output power of 42 W for a frequency of 2 GHz
Gerbedoen, Jean-Claude. "Conception et réalisation technologique de transistors de la filière HEMTs AlGaN/GaN sur substrat silicium pour l'amplification de puissance hyperfréquence." Thesis, Lille 1, 2009. http://www.theses.fr/2009LIL10024/document.
III-N based semiconductors due to their wide bandgap properties present more and more interest in research and industry. ln this frame, the microwave power devices based on gallium nitride constitute a major research field in electronics regarding solid state for microwave applications. The work described in this thesis is the design and the fabrication of high mobility power transistors for amplification in X and Ku band (8-18 GHz). The constantly improvement of epitaxies is correlated to a constant feedback with the technology. ln this way, the approach used in the development and optimization of base modules is associated to the physical analysis necessary to optimize the technological choices. A detailed study of Schottky and ohmic contacts is undertaken. An optimization of technological process conditions for gate recess, ohmic contact, the metallization, the surface pretreatment and the nature of the dielectric passivation was necessary. Fieldplate structure are also studied to further improve the withstanding voltage of components and minimize the impact of surface traps. ln this context, different fieldplate topologies are designed and developed. Several innovative dielectric material as boron nitride are tested to determine the capabilities of these insulated gate HEMTs transistors. The optimized process is applied to AlGaN/GaN HEMT on Si substrate (100) demonstrating a microwave power state-of-the-art at 10GHz for low-cost applications
Jardel, Olivier. "Contribution à la modélisation des transistors pour l’amplification de puissance aux fréquences microondes : développement d’un nouveau modèle électrothermique de HEMT AlGaN/GaN incluant les effets de pièges." Limoges, 2008. http://aurore.unilim.fr/theses/nxfile/default/267e01b1-6569-4f83-a21a-6711f630064d/blobholder:0/2008LIMO4003.pdf.
This report deals with the modeling of microwave power transistors, and particularly GaInP/GaAs HBTs and AlGaN/GaN HEMTs for X-band applications. AlGaN/GaN HEMTs have been commercialized recently, hence there is a need for accurate models allowing to describe their electrical characteristics in order to design power amplifiers. The model proposed for AlGaN/GaN HEMTs includes a description of the electrothermal effects and the trapping effects, to improve the accuracy and the validity range of the classical models
Diab-el-Arab, Hilda. "Conception et réalisation d'un filtre actif de type RC utilisant un amplificateur de gain fini en technologie MMIC." Paris 11, 2001. http://www.theses.fr/2001PA112330.
This work deals with the design of analog biquadratic filters using voltage amplifiers. This study results from the transposition of such filter into microwaves. At first the filter was studied in its holistic struture in order to obtain its optimal configuration. By choosing wisely passive elements values of the later a band-pass filter was realized, which is stable accordable and simple to integrate in other cellular elements. However, this filter is highly sensitive to its constitutive elements. Among the elements that might influence the filter performance is the no-ideality of the amplifier. These things were examined and it was revealed that the no-ideality impair the filter fonction. Furthermore, a major part of this study focused on searching for a topology of a finite gain amplifier based on a feedback principle. .
Subramani, Nandha kumar. "Physics-based TCAD device simulations and measurements of GaN HEMT technology for RF power amplifier applications." Thesis, Limoges, 2017. http://www.theses.fr/2017LIMO0084/document.
GaN High Electron Mobility Transistors (HEMTs) have demonstrated their capabilities to be an excellent candidate for high power microwave and mm-wave applications. However, the presence of traps in the device structure significantly degrades the device performance and also detriments the device reliability. Moreover, the origin of these traps and their physical location remains unclear till today. A part of the research work carried out in this thesis is focused on characterizing the traps existing in the GaN/AlGaN/GaN HEMT devices using LF S-parameter measurements, LF noise measurements and drain-lag characterization. Furthermore, we have used TCAD-based physical device simulations in order to identify the physically confirm the location of traps in the device. Moreover, our experimental characterization and simulation study suggest that LF measurements could be an effective tool for characterizing the traps existing in the GaN buffer whereas gate-lag characterization could be more useful to characterize the AlGaN barrier traps of GaN HEMT devices. The second aspect of this research work is focused on characterizing the AlN/GaN/AlGaN HEMT devices grown on Si and SiC substrate. We attempt to characterize the temperature-dependent on-resistance (RON) extraction of these devices using on-wafer measurements and TCAD-based physical simulations. Furthermore, we have proposed a simplified methodology to extract the temperature and bias-dependent channel sheet resistance (Rsh) and parasitic series contact resistance (Rse) of AlN/GaN HEMT devices. Further, we have made a comprehensive evaluation of thermal behavior of these devices using on-wafer measurements and TCAD-based three-dimensional (3D) thermal simulations. The thermal resistance (RTH) has been extracted for various geometries of the device using measurements and validated using TCAD-thermal simulations
Bridier, Vincent. "Contribution au développement d’une nouvelle plateforme de caractérisation non linéaire pour amplificateurs de puissance hyperfréquences pour les applications radar." Thesis, Lille 1, 2014. http://www.theses.fr/2014LIL10104/document.
Radar high power amplifier, that is one of the performance defining elements of a radar system, is under constant investigation to improve its power and efficiency. Improvement can be provided through the combination of relatively new transistor technology such as HEMT GaN and the use of high efficiency functioning class such as commutation classes. Commutation classes making use of harmonic tones of the complex signal of the amplifier at compression, non- linear characterization is required. Such characterization already available for CW and periodic pulse signal. However periodic pulse only provide an approximation of the actual radar pulse train the amplifier will be submitted to, overlooking effects cause by the pulse train. This affect especially on HEMT GaN which is prone to thermal and memory effects. This work propose a new measurement technique relying on a developed mixer based NVNA prototype able to measure three frequencies simultaneously, allowing the non linear characterization of a power amplifier in actual non periodic radar pulse train. The instrument was validated in CW and periodic pulse condition using commercially available NVNA and a LSNA. The measurement technique, optimized in this work to be performed up to 12GHz, allowed to see effects caused by the radar pulse train on a power amplifier performance while recording all three tones at best signal to noise ratio available thanks to the instrument architecture
Disserand, Anthony. "Nouvelle architecture d’amplificateur de puissance fonctionnant en commutation." Thesis, Limoges, 2017. http://www.theses.fr/2017LIMO0107/document.
Telecommunication systems development is linked to working frequency and bandwidths increasement of future systems on one hand, and the growing place taken by digital electronics in the transmission chains on the other hand. Concerning the second point, the RF power generation in emitters is still implemented in an analog way, but the energy management of the RF power amplifiers is more and more assisted by numeric devices. The appearance of the 'digital technology' in the field of RF power is characterized by the implementation of high speed switching electronic systems like bias modulators for envelope tracking, power digital to analog converters (Power-DAC) or switching mode RF amplifiers (Classe S or D). This thesis work fits in this context, it describes two original switching devices based on GaN HEMT transistors. These elementary switching cells are realized in MMIC technology, they allow switching frequencies up to few hundreds MHz, with voltages reaching 50V, powers about 100W and energy efficiency greater than 80%. These switching cells are then used in various applications: two kinds of bias modulators for envelope tracking system as well as two architectures of class D amplifiers (half-bridge and full-bridge) are analyzed and validated by experimental results
Hessler, Thierry. "Dynamique du gain dans les amplificateurs optiques à semiconducteur en régime femtoseconde /." [S.l.] : [s.n.], 2000. http://library.epfl.ch/theses/?nr=2176.
Ayari, Lotfi. "Contribution au développement d’un banc de mesures temporelles 4-canaux pour la caractérisation avancée de composants et de sous-systèmes RF non linéaires." Thesis, Limoges, 2016. http://www.theses.fr/2016LIMO0117/document.
The future communications for civil and military applications will use complex wideband modulated signals to be transmitted through multi-channel DOHERTY power amplifiers which should have high performance in terms of power, efficiency, OBO, and bandwidth. In order to meet these stringent requirements, designers need time-domain characterization tools for calibrated measurements and for optimizing voltages and currents at both ports of non-linear connectorized or on-wafer devices. This work successfully implements time-domain characterization tools used to meet specific needs for transistor modeling, to optimize their operation in terms of pulse to pulse stability, and to search optimal conditions of their operation modes in a Doherty power amplifier. For this implementation, mathematical modeling is performed to evaluate sampler’s performances in terms of time-domain sampling efficiency in order to choose the best suited sampling architecture for RF time-domain measurements. Rigorous calibration procedures have been developed to obtain simultaneously full time-domain calibrated waveforms (from low Frequencies to Microwave frequencies)
Potier, Clément. "Caractérisation et modélisation des pièges par des mesures de dispersion basse-fréquence dans les technologies HEMT InAIN/GaN pour l'amplification de puissance en gamme millimétrique." Thesis, Limoges, 2016. http://www.theses.fr/2016LIMO0033/document.
Nowadays, High Electron Mobility Transistors (HEMTs) in Gallium Nitride (GaN) take the lead in power amplification at microwave frequencies. Most of the studies and developments on those HEMTs concern AlGaN/GaN structures but alternative transistors with an InAlN barrier, which reduces the strain in the crystal lattice of the whole structure, are investigated by few laboratories. This thesis presents some advanced studies on the new InAlN/GaN HEMT developed by the III-V Lab, focusing on the trapping phenomena induced by defects inside the crystal structure. A new method for the characterization of these defects, based on low-frequency S-Parameters measurements, is proposed. Furthermore, a non-linear electro thermal model including trapping effects for an InAlN/GaN HEMT is detailed and used to design a MMIC power amplifier for Ka-band applications
Lablonde, Laurent. "Etude des non-linéarites de gain d'un amplificateur optique à semi-conducteur." Limoges, 1996. http://www.theses.fr/1996LIMO0029.
Ibrahim, Roger. "Amplificateurs optiques à stabilisation de gain rapide : étude et proposition de configurations WDM hybrides EDFA-SOA." Evry, Institut national des télécommunications, 2008. http://www.theses.fr/2008TELE0001.