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Dissertations / Theses on the topic 'Amorphous-amorphous interfaces'

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Published: 6 September 2023

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1

Kast, Matthew. "Towards Tunable and Multifunctional Interfaces: Multicomponent Amorphous Alloys and Bilayer Stacks." Thesis, University of Oregon, 2017. http://hdl.handle.net/1794/22288.

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Controlling the electronic structure and requisite charge transfer at and across interfaces is a grand challenge of materials science. Despite decades of research and numerous successes in the fields microelectronics and photovoltaics much work remains to be done. In many applications, whether they be in microelectronics, photovoltaics or display technology there is a demand for multiple functions at a single interface. Historically, existent materials were either discarded as an option due to known properties or tested with some application based figure of merit in mind. Following this, the q

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2

Hassanali, Ali. "WATER AT MOLECULAR INTERFACES: STRUCTURE AND DYNAMICS NEAR BIOMOLECULES AND AMORPHOUS SILICA." The Ohio State University, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=osu1275314943.

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3

Mews, Mathias [Verfasser], Bernd [Gutachter] Rech, i. Cabarrocas Pere [Gutachter] Roca, and Bernd [Gutachter] Szyszka. "Interfaces in amorphous/crystalline silicon heterojunction solar cells / Mathias Mews ; Gutachter: Bernd Rech, Pere Roca i Cabarrocas, Bernd Szyszka." Berlin : Technische Universität Berlin, 2016. http://d-nb.info/1156181437/34.

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4

Ross, Nick. "Interfacial Electrochemistry of Cu/Al Alloys for IC Packaging and Chemical Bonding Characterization of Boron Doped Hydrogenated Amorphous Silicon Films for Infrared Cameras." Thesis, University of North Texas, 2016. https://digital.library.unt.edu/ark:/67531/metadc849696/.

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We focused on a non-cooling room temperature microbolometer infrared imaging array device which includes a sensing layer of p-type a-Si:H component layers doped with boron. Boron incorporation and bonding configuration were investigated for a-Si:H films grown by plasma enhanced chemical deposition (PECVD) at varying substrate temperatures, hydrogen dilution of the silane precursor, and dopant to silane ratio using multiple internal reflection infrared spectroscopy (MIR-IR). This study was then confirmed from collaborators via Raman spectroscopy. MIR-IR analyses reveal an interesting counter-ba

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5

Lidbaum, Hans. "Transmission Electron Microscopy for Characterization of Structures, Interfaces and Magnetic Moments in Magnetic Thin Films and Multilayers." Doctoral thesis, Uppsala universitet, Experimentell fysik, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-107941.

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Structural characterization is essential for the understanding of the magnetic properties of thin films and multilayers. In this thesis, both crystalline and amorphous thin films and multilayers were analyzed utilizing transmission electron microscopy (TEM). High resolution TEM and electron diffraction studies emphasize on the growth of amorphous Fe91Zr9 and Co68Fe24Zr8 on both Al2O3 and Al70Zr30 in multilayer structures by magnetron sputtering. The properties of the growth surfaces were found to strongly influence the formation of nano-crystallites of the magnetic material at interfaces. Fiel

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6

Fagas, Georgios. "Vibrational properties of complex solids." Thesis, Lancaster University, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.321898.

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7

Varache, Renaud. "Development, characterization and modeling of interfaces for high efficiency silicon heterojunction solar cells." Thesis, Paris 11, 2012. http://www.theses.fr/2012PA112279/document.

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L’interface entre le silicium amorphe (a-Si:H) et le silicium cristallin (c-Si) est un constituent clés de cellules solaires à haut rendement reposant sur des procédés à basse température. Trois propriétés de l’interface déterminent le rendement des cellules solaires à hétérojonction de silicium: les décalages de bandes entre a-Si:H et c-Si, les défauts d’interface et la courbure de bande dans c-Si. Ces trois aspects sont traités dans ces travaux de thèse.Dans un premier un temps, un calcul analytique de la courbure de bande dans c-Si est développé. Il repose sur l’approximation d’une densité

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8

Luo, Haoming. "High frequency thermomechanical study of heterogeneous materials with interfaces." Thesis, Lyon, 2020. http://www.theses.fr/2020LYSEI130.

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Le transfert de chaleur est intimement lié à la propagation du son (transfert acoustique) dans les matériaux, par exemple dans les isolants et les semi-conducteurs, les principaux vecteurs d’énergie sont des phonons acoustiques. Le concept de présence d’interfaces a été largement exploité pour manipuler efficacement les phonons des longueurs d’onde macroscopiques aux longueurs d’onde nanométriques. Les derniers correspondent aux fréquences en régime THz, qui sont responsables du transport thermique à température ambiante. Dans cette thèse, la méthode des éléments finis est utilisée pour effect

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9

Zhu, Kai Schiff Eric A. "Interface modulation spectroscopy and doping physics in amorphous silicon." Related Electronic Resource: Current Research at SU : database of SU dissertations, recent titles available full text, 2003. http://wwwlib.umi.com/cr/syr/main.

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10

Gandy, Amy S. "A Transmission Electron Microscopy study of the Interaction between Defects in Amorphous Silicon and a Moving Crystalline/Amorphous Interface." Thesis, University of Salford, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.502784.

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11

Gandy, Amy Sarah. "A Transmission electron microscopy study of the interaction betweeen defects in amorphous silicon and a moving crystalline amorphous interface." Poitiers, 2008. http://theses.edel.univ-poitiers.fr/theses/2008/Gandy-Amy/2008-Gandy-Amy-These.pdf.

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Transmission electron microscopy (TEM) has been used to investigate the damage produced following high temperature (350˚C) Xe implantation into [100] Si at fluencies (>1x1016 Xe ions/cm2) and energy (250keV) which produce a buried amorphous layer; and the defect structures produced following thermal anneals of 400˚C, 600˚C or 800˚C for 30 minutes. Analysis of these samples yielded results which suggested that the Xe gas contained within the amorphous layers was swept by the amorphous/crystalline interfaces during solid phase epitaxial re-crystallisation (SPEG) into large bubbles elongated a

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12

Gilchrist, Valerie A. "The adsorption of surfactant at the amorphous polymer-solution interface." Thesis, University of Surrey, 2002. http://epubs.surrey.ac.uk/844324/.

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Adsorption of surfactants onto amorphous polymers at the solid-solution interface is of direct relevance to many industrial sectors ranging from food, pharmaceuticals, paints, paper and photographic colour films. Although it is widely accepted that surfactants play the underpinning role in these applications, little is currently understood about the interactions between surfactants and polymeric materials at the molecular level. This lack of progress is mainly due to the inability of most existing techniques in probing this type of structural information at the wet interface. Specular neutron

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13

Djurberg, Viktor. "Tailoring the Magnetic Properties of Amorphous TbCo Nano Films." Thesis, Uppsala universitet, Materialfysik, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-348209.

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The possibility to change magnetic anisotropy of amorphous TbCo films from out-of-plane to in-plane has been investigated. The effects of TbCo film's thickness and composition on the magnetic anisotropy were investigated together with the effects of growing the TbCo films on a SmCo seed layer. This was studied by sputtering TbCo films of composition Tb_xCo_(100-x) x=16,18,20,22 and 24, with thickness ranging between 2-20 nm, with and without the presence of a 20 nmSm_15Co_85 seed layer. All films were grown in a 130 mT magnetic in-plain field to imprint an in-plane anisotropy. The structure an

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14

Walczak, Malgorzata. "Role and properties of the confined amorphous phase of polymers." Phd thesis, Paris, ENSAM, 2012. http://pastel.archives-ouvertes.fr/pastel-00839174.

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The aim of the thesis was to elucidate the effect of confinement of amorphous phase of apolymer above its glass transition temperature being in contact with another polymer in a rigid state.Confinement is unavoidably connected with surfaces enforcing confinement. It is very difficult to separate theeffect of confinement from the effect of interfaces because both effects arise parallel and coincide. Multilayeredfilms were chosen as the base material for the studies because they contain multifold number of confined layerand response from confinement and interfaces is multifold increased. Hoping

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15

Liu, Richard Yufeng. "Oxygen Transport as a Structure Probe for Amorphous Polymeric Systems." Case Western Reserve University School of Graduate Studies / OhioLINK, 2005. http://rave.ohiolink.edu/etdc/view?acc_num=case1103694304.

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16

Eggers, Tatiana M. "Surface and Interface Effects of Magnetoimpedance Materials at High Frequency." Scholar Commons, 2018. https://scholarcommons.usf.edu/etd/7282.

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Amorphous and nanocrystalline transition metal magnetic alloys (TMMAs) have been the subjects of fundamental and applied study due to their unique structure. The lack of long-range order in these materials sets the stage for their soft magnetic properties to be tuned for a variety of technological applications, such as sensitive magnetic field sensors, high frequency transformers, and stress sensors. Fundamental investigation of the magnetic and structural properties of these materials is also motivated by their unique amorphous or nanocrystalline-embedded amorphous matrix morphology, which ha

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17

Favre, Wilfried. "Silicium de type n pour cellules à hétérojonctions : caractérisations et modélisations." Phd thesis, Université Paris Sud - Paris XI, 2011. http://tel.archives-ouvertes.fr/tel-00635222.

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Les cellules à hétérojonctions de silicium fabriquées par croissance de couches minces de silicium amorphe hydrogéné (a-Si :H) à basse température sur des substrats de silicium cristallin (c-Si) peuvent atteindre des rendements de conversion photovoltaïque élevés (η=23 % démontré). Les efforts de recherche ayant principalement été orientés vers le cristallin de type p jusqu'à présent en France, ce travail s'attache à l'étude du type n pour d'une part déterminer les performances auxquelles s'attendre avec cette nouvelle filière et d'autre part les améliorer. Pour cela, nous avons mis en œuvre d

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18

Shin, Yun Kyung. "The water-amorphous silica interface: electrokinetic phenomena in a complex geometry, and treatment of interactions with biomolecules." The Ohio State University, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=osu1299587783.

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19

Koishi, Ayumi. "Mécanismes de nucléation des carbonates." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAU032/document.

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La précipitation et la dissolution du carbonate de calcium (CaCO3) sont des processus clés dans les systèmes naturels en raison de leur association intime avec le cycle du carbone terrestre. La précipitation se produit généralement sur des substrats étrangers en abaissant les barrières énergétiques qui contrôlent la nucléation. Ce processus appelé nucléation hétérogène résulte d'une interaction entre la sursaturation du fluide et les différentes énergies d’interface entre substrat-noyau-fluide. Malgré l’importance des énergies d’interface sur le devenir de la nucléation hétérogène, la littérat

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20

Desmond, Jasmine L. "Investigating the adsorption of select polar functionalities with the aqueous electrolyte/amorphous silica interface to understand the 'low salinity' effect." Thesis, University of Warwick, 2015. http://wrap.warwick.ac.uk/78792/.

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Low-salinity enhanced oil recovery (EOR) uses low-salinity seawater in the water flooding of sandstone reservoirs to maximise oil yields. Because oil is strongly adsorbed onto mineral surfaces, understanding the interactions involved at the oil/mineral interface, and how to weaken them, is crucial to design more efficient, low-cost EOR. This thesis focuses on the influence of electrolyte concentration on the interaction of alkylammonium (R-NH+3) and alkylcarboxylic acid/carboxylate (R-COOH/COO- functionalities, present in crude-oil, with the amorphous silica (mimic for quartz grains in sandsto

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21

Defresne, Alice. "Amélioration de la passivation de cellules solaires de silicium à hétérojonction grâce à l’implantation ionique et aux recuits thermiques." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLS533/document.

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Les cellules solaires à hétérojonction a-Si:H/c-Si atteignent un rendement record de 24.7% en laboratoire. La passivation de la surface du c-Si est la clé pour obtenir de hauts rendements. En effet, la brusque discontinuité de la structure cristalline à l'interface amorphe/cristal induit une forte densité de liaisons pendantes créant une grande densité de défauts dans la bande interdite. Ces défauts sont des centres de recombinaison pour les paires électron-trou photogénérées dans le c-Si. Différentes couches diélectriques peuvent être utilisées pour passiver les wafers dopés n et dopés p : (i

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ANTOINE, ANNE-MARIE. "Mecanismes de croissance et de constitution d'interfaces dans les couches minces de semiconducteurs amorphes hydrogenes etudies par ellipsometrie spectroscopique in situ." Paris 7, 1987. http://www.theses.fr/1987PA077179.

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Etude de la croissance de couches minces de silicium, germanium et d'alliages silicium-germanium amorphes hydrogenes deposees par decomposition radiofrequence de silane, germane et d'hydrogene. Etude des mecanismes d'initiation de la couche en fonction des conditions de preparation. Analyse de l'influence de la nature du support sur le depot des premieres couches monomoleculaires

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23

Awad, Yousef Odeh. "Characterization of amorphous silicon carbide and silicon carbonitride thin films synthesized by polymer-source chemical vapor deposition mechanical structural and metal-interface properties." Thèse, Université de Sherbrooke, 2006. http://savoirs.usherbrooke.ca/handle/11143/1821.

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Amorphous silicon carbide (a-SiC) and silicon carbonitride thin films have been deposited onto a variety of substrates by Polymer-Source Chemical Vapor Deposition (PS-CVD). The interfacial interaction between the a-SiC films and several substrates including silicon, SiO[subscript 2], Si[subscript 3]N[subscript 4], Cr, Ti and refractory metal-coated silicon has been studied. The effect of thermal annealing on the structural and mechanical properties of the prepared films has been discussed in detail. The composition and bonding states are uniquely characterized with respect to the nitrogen atom

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24

Pan, Jie. "UNDERSTANDING ELECTRICAL CONDUCTION IN LITHIUM ION BATTERIES THROUGH MULTI-SCALE MODELING." UKnowledge, 2016. http://uknowledge.uky.edu/cme_etds/62.

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Silicon (Si) has been considered as a promising negative electrode material for lithium ion batteries (LIBs) because of its high theoretical capacity, low discharge voltage, and low cost. However, the utilization of Si electrode has been hampered by problems such as slow ionic transport, large stress/strain generation, and unstable solid electrolyte interphase (SEI). These problems severely influence the performance and cycle life of Si electrodes. In general, ionic conduction determines the rate performance of the electrode, while electron leakage through the SEI causes electrolyte decomposit

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25

Messaadi, Saci. "Modélisation électrique de couches ou de fils minces métalliques : Effet thermique d'interface verre-couche amorphe." Nancy 1, 1987. http://www.theses.fr/1987NAN10048.

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En utilisant l'expression de la conductivité électrique donnant l'équivalence entre le modèle de Fuchs-Sondheimer et le modèle de Cottey étendu, des expressions simples de la conductivité sont substituées à celle du modèle de Mayadas-Shatzkcs. De nouvelles formulations simplifiées relatives à la conductivité électrique des doubles couches métalliques, des fils fins métalliques en l'absence de champ magnétique et la magnétorésistance longitudinale de ces derniers sont obtenues dans le cadre du modèle de conduction multidimensionnel

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26

Ocampo, Juan. "Etude des phénomènes d'interface dans la glace : adsorption, croissance des clathrates et désordre protonique : [thèse en partie soutenue sur un ensemble de travaux]." Grenoble 1, 1988. http://www.theses.fr/1988GRE10087.

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Etude depuis l'etat amorphe a 77 k jusqu'a l'etat hexagonal pres du point de fusion de l'evolution structurale et dynamique de la surface de la glace en contact ou non avec des gaz (he, kr, ar, n::(2), co::(2), nc::(4)h::(10)) ou des solides (sio::(2), pvc, h::(2)so::(4)). Approche thermodynamique (adsorption de gaz), cinetique (frittage et croissance de clathrates) et spectroscopique (rmn des protons). Mecanisme de reconstruction de la surface depuis l'adsorption jusqu'a la clathration, en tenant compte des coefficients de diffusion et des energies d'activation mesurees. Existence d'une couch

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27

Labdi, Yamina. "Caracterisation des structures n+in+ minces, a base de sillicium amorphe hydrogene par la methode des courants limites par charge d'espace : prise en compte des effets d'interface." Paris 7, 1988. http://www.theses.fr/1988PA077091.

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Cette these est principalement consacree a l'etude experimentale et theorique des structures minces du type metal/n**(+)in**(+)/metal a base de silicium amorphe hydrogene. Dans un premier temps, nous nous affranchissons des problemes des resistances parasites dues a la presence des jonctions metal/n**(+), en etudiant ces jonctions de facon detaillee lorsque le metal utilise est de l'oxyde d'etain, du chrome ou de l'aluminium. Nous serons amenes a corriger de facon empirique et si necessaire, les caracteristiques j(v) mesurees afin que celles ci decrivent le comportement de la couche centrale i

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28

Sahli, Salah. "Etude du comportement electrique de films minces de gaas amorphes ou polycristallins elabores par depots en phase vapeur ou par plasma a partir d'organometalliques." Toulouse 3, 1986. http://www.theses.fr/1986TOU30049.

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Des films de gaas polycristallin ont ete realises par depot en phase vapeur, a partir de molecules organometalliques. L'auteur a montre que les proprietes electriques de ce materiau semiconducteur sont controlees par les joints de grains. Une densite d'etats de surface uniforme entre les grains a ete mise en evidence. L'introduction entre les grains d'une phase amorphe de type si::(y)c::(1-y) modifie le mode de conduction. La resistivite des films augmente ou diminue suivant la valeur de la concentration de si::(y)c::(1-y). Un depot par plasma froid a partir des memes molecules que celles util

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29

Knutson, Christopher C. "The chemistry and device applications of amorphous thin-film interfaces." Thesis, 2011. http://hdl.handle.net/1957/26076.

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Solid-state amorphous materials show amazing promise in thin-film electronics. The interface-to-bulk ratio of thin films makes interfacial chemistries of these systems of utmost importance. Thin films of amorphous metals, dielectrics and semiconductors have novel chemistries that are not only based upon their elemental constituent makeup, but also based upon the method with which the amorphous material is deposited and treated after deposition. The chemical attributes unique to amorphous, thin-film systems are defined primarily through the utilization of solution-processed aluminum oxide phosp

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Divya, G. "Structural signatures of relaxation mechanisms in glass forming and devitrifying colloidal suspensions." Thesis, 2023. https://etd.iisc.ac.in/handle/2005/6105.

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Connecting macroscopic behavior of matter to the microscopic interactions is the central goal of condensed matter physics. Yet, achieving such a challenging goal in atomic and molecular systems would require tracking all particles in the system up to the length scale of atomic resolution (≈ nm) and timescales of picoseconds. A typical workaround through this daunting challenge is to instead model the system with colloidal suspensions, where length scales (≈ μm) and timescales(≈ ms) are more accessible to experiments. Over the last two decades, colloidal systems have been used to mimic atomic

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31

Lin, Yang-You, and 林沇佑. "The Impact on Photovoltaic Efficiency with Regards to Defect Densities of Amorphous Silicon Layers and Carrier Recombination Velocity at Interfaces in a Heterojunction Solar Cell Using Silvaco ATLAS." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/15593378593498140236.

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碩士<br>大葉大學<br>電機工程學系<br>98<br>This study involves the novel heterojunction with intrinsic thin layer (HIT) solar cell structure. Combining the advantages of both crystalline silicon and amorphous silicon, a new structure of silicon-based solar cell was proposed - the heterojunction with an intrinsic thin layer (HIT) solar cell. It has high stability and large light absorption coefficient. It is manufactured under low temperature deposit process, which results in a low cost thin film HIT solar cell with high conversion efficiency. The influence of various layer materials and interfaces on the p

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Lien, Wei-Kuang, and 連偉光. "The influence of p/i interface on hydrogenated amorphous silicon solar cells." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/13566522814091809944.

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碩士<br>國立中興大學<br>電機工程學系所<br>99<br>In this thesis, 13.56 MHz plasma-enhanced chemical vapor deposition (PECVD) with pulse-wave modulation of RF plasma is used to fabricate the hydrogenated amorphous silicon (a-Si:H) solar cells. The initial gas concentration is adjusted to control the dissociation of the gases in the plasma and its influence on the performance of solar cells is investigated. The p-layer deposition is controlled by adjusted B2H6 initial-growth gas concentration. The results show that B2H6 flowed into the chamber before the plasma excitation 8 seconds can reduce excessive diss

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Yeh, Chun-Cheng, and 葉雋正. "Back Interface Engineering of Amorphous In-Ga-Zn-O Thin Film Transistor." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/70049527206321314667.

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碩士<br>國立交通大學<br>光電工程學系<br>99<br>With a high mobility (>10 cm2/Vs) and a low threshold voltage (&lt; 5 V) under a low temperature process, transparent amorphous oxide semiconductor thin-film transistors (AOS TFTs) draw considerable attention due to their applications on flexible displays. Beside, a-IGZO is very stable in atmosphere, which makes it an ideal material in sensor technology. In this study, the sensor structure is based on a-IGZO TFT with an additional sensing layer capped above it. a-IGZO active layer is act as electrical transport layer, and the sensing layer can improve sensit

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Yi, Yang Chun, and 楊俊儀. "A Study of Interface Between Metal/Amorphous Semiconductor/ Compound Semiconductor and Its Applications for MESFET." Thesis, 1993. http://ndltd.ncl.edu.tw/handle/95373515315744947343.

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碩士<br>國立成功大學<br>電機工程研究所<br>81<br>The direct coupled field-effect transistor logic (DCFL) which consist of MESFET is widely used for large scale integrated circuit because of its simple circuit and low power dissipation. In addition, MESFET is also an important structure for opto-electrical applications. Unfortunately,the Schottky barrier height between metal and Ⅲ-Ⅴ material is low owing to Fermi-level pinning, this results in low logic swing and makes circuit easily disturbed by noise whi

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Kuo, Jui-Lin, and 郭睿麟. "Interface Improvement Thin-Film Transistors with Amorphous Mg-InGaZnO/InGaZnO AP-PECVD Fabricated Channel Structure." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/2h8m8x.

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碩士<br>國立交通大學<br>電子研究所<br>107<br>Nowadays, Active-matrix organic light-emitting diode (AMOLED) display applications are toward large size, low power consumption, flexible substrate, high speed and high resolution. Amorphous oxide thin film transistor (AOS) has good electron mobility, process uniformity, low process temperature and high optical transmittance to meet the specifications of next-generation displays. Among many amorphous oxide thin film transistors, IGZO TFT is also competitive with better electron mobility (>10cm2/V-s), small subthreshold swing, large switching ratio (>106) and goo

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Schuhmann, Henning. "Hochauflösende mikroskopische und spektroskopische Untersuchungen zur strukturellen Ordnung an MgO-CoFeB-Grenzflächen." Doctoral thesis, 2014. http://hdl.handle.net/11858/00-1735-0000-0023-9929-2.

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Tunnelmagnetowiderstandselemente (MTJ) mit einer kristallinen MgO Tunnelbarriere zwischen amorphen CoFeB-Elektroden haben Aufgrund ihres hohen Tunnelmagnetowiderstandes (TMR) und der guten Integrationsmöglichkeit in bestehende Prozesse viel Aufmerksamkeit bekommen. Dabei zeigten vorherige Berechnungen, dass die strukturellen und chemischen Eigenschaften der Grenzfläche einen signifikanten Einfluss auf den TMR aufweisen, weshalb diese Grenzfläche im Rahmen dieser Arbeit mittels quantitativer, hochauflösender und analytischer Transmissionselektronenmikroskopie analysiert wurde. Um einen hohen T

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Feng, Yu-ting, and 馮宇廷. "The investigation of mechanical properties of ZrCu/Zr/ZrCu amorphous－crystalline nanolaminates with inclined interface by molecular statics simulation." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/90556427491033621712.

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碩士<br>國立中山大學<br>機械與機電工程學系研究所<br>100<br>In this study, the mechanical properties of Cu-Zr binary bulk metallic glasses (BMG) were investigated at the nano-scale. The stable amorphous structures and corresponding energies of BMG structures are performed by density functional theory (DFT) calculation as reference data. This study will combine the Force-Matching (FM) method and Basin-Hopping (BH) method to develop a new method for fitting the Cu-Zr Tight-binding (TB) potential parameters. Moreover, the Bulk modulus, Shear modulus, Young''s modulus and Poisson ratio of Cu46Zr54, Cu50Zr50

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Eilers, Gerrit. "Korrelationen zwischen struktureller Ordnung und elektrischen Transporteigenschaften in CoFeB|MgO|CoFeB Tunnelmagnetowiderstandselementen." Doctoral thesis, 2010. http://hdl.handle.net/11858/00-1735-0000-0006-B4D9-2.

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Thiel, Karsten. "Strukturelle Untersuchung der amorph/kristallinen Grenzfläche mittels quantitativer hochauflösender Transmissionselektronenmikroskopie an den Systemen a-Si/c-Si und a-Ge/c-Si." Doctoral thesis, 2006. http://hdl.handle.net/11858/00-1735-0000-0006-B448-6.

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40

Weisemöller, Thomas. "X-ray analysis of praseodymia." Doctoral thesis, 2009. https://repositorium.ub.uni-osnabrueck.de/handle/urn:nbn:de:gbv:700-2009111311.

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Abstract:

In this thesis, it was shown that thin films of hexagonal praseodymium sesquioxide on Si(111) can be transformed to B-oriented twin free films of cubic praseodymium dioxide with oxygen vacancies by post deposition annealing in 1 atm. oxygen at temperatures from 300°C up to 700°C for 30 minutes. Films annealed at 100°C and 200°C are still purely hexagonal praseodymium sesquioxide after the annealing process. In the transformed films, two stoichiometric phases coexist laterally. The lateral lattice constant of both species is almost identical to the one of the originally deposited hexagonal pras

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